CN116759309A - Method and system for cleaning polycrystalline silicon - Google Patents

Method and system for cleaning polycrystalline silicon Download PDF

Info

Publication number
CN116759309A
CN116759309A CN202310698685.0A CN202310698685A CN116759309A CN 116759309 A CN116759309 A CN 116759309A CN 202310698685 A CN202310698685 A CN 202310698685A CN 116759309 A CN116759309 A CN 116759309A
Authority
CN
China
Prior art keywords
etching
polysilicon
time
temperature
seconds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202310698685.0A
Other languages
Chinese (zh)
Inventor
潘浩
全铉国
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xian Eswin Silicon Wafer Technology Co Ltd
Xian Eswin Material Technology Co Ltd
Original Assignee
Xian Eswin Silicon Wafer Technology Co Ltd
Xian Eswin Material Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xian Eswin Silicon Wafer Technology Co Ltd, Xian Eswin Material Technology Co Ltd filed Critical Xian Eswin Silicon Wafer Technology Co Ltd
Priority to CN202310698685.0A priority Critical patent/CN116759309A/en
Publication of CN116759309A publication Critical patent/CN116759309A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

Abstract

The embodiment of the application discloses a method and a system for cleaning polysilicon, wherein the method comprises the following steps: judging the granularity of the polysilicon; performing first etching on the polysilicon at a first temperature and for a first time, wherein the first time is longer corresponding to the larger granularity; performing a second etching of the polysilicon subjected to the first etching at a second temperature lower than the first temperature and a second time shorter than the first time, wherein the second time is longer corresponding to the larger grain size; and performing at least one subsequent etching on the polysilicon subjected to the second etching, wherein the temperature of the at least one subsequent etching is lower than the second temperature and sequentially decreases, the time of the at least one subsequent etching is shorter than the second time and sequentially decreases, and the time of the at least one subsequent etching is longer corresponding to the larger granularity.

Description

Method and system for cleaning polycrystalline silicon
Technical Field
The present application relates to the field of semiconductor manufacturing such as silicon wafers, and more particularly to a method and system for cleaning polysilicon.
Background
Polysilicon, which is a base material for single crystal silicon in the semiconductor industry, has extremely high cleanliness requirements, generally requires that a good product be purchased from a specialized polycrystalline silicon feedstock supplier, and that the polycrystalline silicon feedstock be cleaned prior to pulling the single crystal ingot by the Czochralski method. In addition, the situation of crystal bar structural loss can occur in the crystal pulling process, and the situation that machine faults occur accidentally in the subsequent roll grinding and cutting working section to cause crystal cracking of monocrystalline silicon, at the moment, the polycrystalline part and the cracked silicon materials are required to be recycled, and the raw material cost is reduced.
The cleaning of the polysilicon is mainly accomplished by etching the polysilicon. Specifically, for example, the polysilicon may be put into an etching tank containing an etching liquid, and the surface of the polysilicon may be chemically reacted with the etching liquid, whereby the contaminants on the surface of the polysilicon are removed from the polysilicon, and the polysilicon may be purified.
However, in the current cleaning method, the etching amount of polysilicon is difficult to control precisely, because various factors such as etching temperature, etching time, etc. which affect the etching amount are difficult to control, for example, for the etching temperature which affects the etching rate, in addition to the heat supplied to the etching liquid by the heater, the reaction between polysilicon and the etching liquid generates heat, so that the etching temperature can only be controlled within a certain range and cannot be controlled very precisely, and for the etching time which is proportional to the etching amount, for example, the switching between the state of not being immersed in the etching liquid and the state of being immersed in the etching liquid is always required to be completed once, or the etching time is also difficult to control.
Disclosure of Invention
In order to solve the above technical problems, it is desirable to provide a method and a system for cleaning polysilicon, which can improve the accuracy of etching amount while improving the production efficiency, can avoid the phenomenon of ash spots or similar water quenching on the surface of polysilicon, and can clean the polysilicon more thoroughly.
The technical scheme of the application is realized as follows:
in a first aspect, an embodiment of the present application provides a method for cleaning polysilicon, the method including:
judging the granularity of the polysilicon;
performing first etching on the polysilicon at a first temperature and for a first time, wherein the first time is longer corresponding to the larger granularity;
performing a second etching of the polysilicon subjected to the first etching at a second temperature lower than the first temperature and a second time shorter than the first time, wherein the second time is longer corresponding to the larger grain size;
and performing at least one subsequent etching on the polysilicon subjected to the second etching, wherein the temperature of the at least one subsequent etching is lower than the second temperature and sequentially decreases, the time of the at least one subsequent etching is shorter than the second time and sequentially decreases, and the time of the at least one subsequent etching is longer corresponding to the larger granularity.
In the method according to the above embodiment of the present application, for the polysilicon subjected to the first etching, since the etching temperature is higher, the etching rate is faster, which is beneficial to improving the production efficiency, even though the resulting etching amount is not accurate enough, but the resulting etching amount is not determined, the inaccuracy can be compensated in the subsequent etching process, and the etching time of the faster etching rate is longer, so that the total etching time can be reduced or the production efficiency is improved, for the polysilicon subjected to the final etching, since the etching temperature is lower, the etching rate is slower, so that the etching temperature and the corresponding etching rate are not precisely controlled, even if the etching temperature and/or the etching time are not precisely controlled, the resulting deviation of the etching amount is smaller, that is, the resulting deviation of the total etching amount can be improved, and the etching time of the slower etching rate is shorter, so that the total etching time can be reduced or the production efficiency is improved, in addition, since the whole etching process of the polysilicon is performed at least three times, the etching is performed by at least three times, the etching solution is more completely different from the etching solution, the surface of the polysilicon is more completely washed, the difference between the polysilicon is avoided, and the surface of the polysilicon is completely washed by the etching solution, and the difference is more than the case of the first etching solution, and the impurity is completely removed, or the concentration of impurities remaining in the etching liquid that eventually etches the polysilicon is much lower than the ratio of the total impurities in the polysilicon to the total amount of etching liquid, and when a single etching is performed, the concentration of impurities remaining in the entire etching liquid is equal to the ratio of the total impurities in the polysilicon to the total amount of etching liquid, thereby causing more impurities to remain on the cleaned polysilicon after the polysilicon is removed from the etching liquid. In addition, as shown in fig. 2, the polysilicon in the present application is composed of a large number of polysilicon grains, and thus, the grain size mentioned in the context refers to the average grain size of the large number of polysilicon grains.
In a preferred embodiment of the application, the at least one subsequent etch is a single third etch.
In this way, the number of parts for completing the entire etching can be reduced, and in addition, the amount of etching liquid required to be used is also smaller, thereby reducing the cost, and in addition, the entire etching process can be completed by only performing transfer twice on polysilicon, thereby reducing the energy loss.
Preferably, the first temperature is between 27 ℃ and 29 ℃, the second temperature is between 25 ℃ and 27 ℃, and the third temperature of the third etching is between 23 ℃ and 25 ℃.
Preferably, when the grain size of the polysilicon is greater than 50mm, the first time is between 115 seconds and 125 seconds, the second time is between 95 seconds and 105 seconds, and the third time of the third etch is between 75 seconds and 85 seconds.
Preferably, when the grain size of the polysilicon is not greater than 50mm, the first time is between 85 seconds and 95 seconds, the second time is between 65 seconds and 75 seconds, and the third time of the third etch is between 58 seconds and 62 seconds.
Preferably, the method further comprises sequentially performing main cleaning and final cleaning on the polysilicon subjected to the last etching.
Thus, polysilicon having no chemical remaining on the surface can be obtained, and is thus suitable for use in the next step.
Preferably, the method further comprises drying the polysilicon subjected to the final cleaning.
Thus, polycrystalline silicon having a surface free from any chemical and liquid components can be obtained.
In a preferred embodiment of the application, each etch is performed using an etching liquid.
Preferably, the etching solution contains HNO 3 And HF.
In a second aspect, an embodiment of the present application provides a system for cleaning polysilicon, the system comprising:
a determination unit for determining the granularity of the polysilicon;
the first etching unit is used for carrying out first etching on the polycrystalline silicon at a first temperature and a first time, wherein the first time is longer corresponding to the larger granularity;
a second etching unit for performing a second etching on the polysilicon subjected to the first etching at a second temperature lower than the first temperature and a second time shorter than the first time, wherein the second time is longer corresponding to the larger the granularity;
and at least one subsequent etching unit for performing at least one subsequent etching on the polysilicon subjected to the second etching, respectively, wherein the temperature of the at least one subsequent etching is lower than the second temperature and sequentially decreases, the time of the at least one subsequent etching is shorter than the second time and sequentially decreases, and the time of the at least one subsequent etching is longer corresponding to the larger granularity.
Drawings
Fig. 1 is a schematic diagram of a method for cleaning polysilicon according to an embodiment of the present application;
fig. 2 is a schematic diagram of a system for cleaning polysilicon according to an embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application.
Referring to fig. 1, an embodiment of the present application provides a method for cleaning a polysilicon MS as shown in fig. 2, which may include:
s101: judging the granularity of the polysilicon;
s102: performing first etching on the polysilicon at a first temperature and for a first time, wherein the first time is longer corresponding to the larger granularity;
s103: performing a second etching of the polysilicon subjected to the first etching at a second temperature lower than the first temperature and a second time shorter than the first time, wherein the second time is longer corresponding to the larger grain size;
s104: and performing at least one subsequent etching on the polysilicon subjected to the second etching, wherein the temperature of the at least one subsequent etching is lower than the second temperature and sequentially decreases, the time of the at least one subsequent etching is shorter than the second time and sequentially decreases, and the time of the at least one subsequent etching is longer corresponding to the larger granularity.
In the method according to the above embodiment of the present application, for the polysilicon subjected to the first etching, since the etching temperature is higher, the etching rate is faster, which is beneficial to improving the production efficiency, even though the resulting etching amount is not accurate enough, but the resulting etching amount is not determined, the inaccuracy can be compensated in the subsequent etching process, and the etching time of the faster etching rate is longer, so that the total etching time can be reduced or the production efficiency is improved, for the polysilicon subjected to the final etching, since the etching temperature is lower, the etching rate is slower, so that the etching temperature and the corresponding etching rate are not precisely controlled, even if the etching temperature and/or the etching time are not precisely controlled, the resulting deviation of the etching amount is smaller, that is, the resulting deviation of the total etching amount can be improved, and the etching time of the slower etching rate is shorter, so that the total etching time can be reduced or the production efficiency is improved, in addition, since the whole etching process of the polysilicon is performed at least three times, the etching is performed by at least three times, the etching solution is more completely different from the etching solution, the surface of the polysilicon is more completely washed, the difference between the polysilicon is avoided, and the surface of the polysilicon is completely washed by the etching solution, and the difference is more than the case of the first etching solution, and the impurity is completely removed, or the concentration of impurities remaining in the etching liquid that eventually etches the polysilicon is much lower than the ratio of the total impurities in the polysilicon to the total amount of etching liquid, and when a single etching is performed, the concentration of impurities remaining in the entire etching liquid is equal to the ratio of the total impurities in the polysilicon to the total amount of etching liquid, thereby causing more impurities to remain on the cleaned polysilicon after the polysilicon is removed from the etching liquid.
In a preferred embodiment of the application, the at least one subsequent etch is a single third etch.
In this way, the number of parts for completing the entire etching can be reduced, and in addition, the amount of etching liquid required to be used is also smaller, thereby reducing the cost, and in addition, the entire etching process can be completed by only performing transfer twice on polysilicon, thereby reducing the energy loss.
In the case of the above-described embodiments, preferably, the first temperature may be between 27 ℃ and 29 ℃, the second temperature may be between 25 ℃ and 27 ℃, and the third temperature of the third etching may be between 23 ℃ and 25 ℃.
The temperature can enable the etching rate of the polysilicon to meet the requirement, and the difference between different temperatures is small enough, so that the phenomenon that the polysilicon generates gray spots or is similar to water quenching is fully avoided.
In the case of the above embodiment, preferably, when the grain size of the polysilicon MS is greater than 50mm, the first time may be between 115 seconds and 125 seconds, the second time may be between 95 seconds and 105 seconds, and the third time of the third etching may be between 75 seconds and 85 seconds.
The total duration is enough for etching the polysilicon with granularity larger than 50mm, the phenomenon that full etching cannot be completed can be avoided, and the final etching, namely the third etching, is short in time, so that the total etching quantity precision is ensured to meet the requirement.
In the case of the above embodiment, preferably, when the grain size of the polysilicon MS is not more than 50mm, the first time may be between 85 seconds and 95 seconds, the second time may be between 65 seconds and 75 seconds, and the third time of the third etching may be between 58 seconds and 62 seconds.
The total duration is less, but the etching of polysilicon with granularity not more than 50mm can be satisfied, the problem of productivity loss caused by overlarge etching amount is avoided, and in addition, the final etching, namely the third etching, is also ensured to satisfy the requirement of total etching amount precision for a shorter time.
Further preferably, when the grain size of the polysilicon MS is greater than 50mm, the time of the multiple etching may be sequentially reduced from 120 seconds to 80 seconds, and the temperature of the multiple etching may be sequentially reduced from 28 ℃ to 24 ℃, in which case the grain size reduction value of the polysilicon MS after the etching is completed is 15 μm to 20 μm, and when the grain size of the polysilicon MS is not greater than 50mm, the time of the multiple etching may be sequentially reduced from 90 seconds to 60 seconds, and the temperature of the multiple etching may be sequentially reduced from 28 ℃ to 24 ℃, in which case the grain size reduction value of the polysilicon MS after the etching is completed is 5 μm to 10 μm.
With the above method of completing the cleaning by etching, the polysilicon MS is not suitable for use directly in the next process after the completion of the etching process because the etching liquid EL as shown in fig. 2 remains on the surface of the polysilicon MS to contaminate the next process. In this regard, in the case of the above-described embodiments, preferably, the method further includes sequentially performing main cleaning and final cleaning of the polysilicon subjected to the last etching.
Thus, the polysilicon MS having no chemical remaining on the surface can be obtained, and is thus suitable for use in the next process.
For a specific cleaning mode, the polysilicon MS may be rinsed with ultrapure water, for example, to remove chemicals such as a mixed solution of nitric acid and hydrofluoric acid remaining on the surface of the polysilicon MS. In addition, in the case of performing the above-described two-time cleaning, most of the chemicals remaining on the surface of the polysilicon MS can be removed during the main cleaning, thereby thoroughly removing the chemicals during the final cleaning.
Although the above-described method is used for cleaning the polysilicon MS, it can be said that impurities have been removed or cleaning has been completed after receiving the main cleaning and final cleaning, it is inevitable that liquid components such as ultrapure water remain on the surface of the polysilicon MS during cleaning, and in order to obtain the polysilicon MS having not only no chemical but also no liquid components on the surface, in the case of the above-described embodiment, it is preferable that the method further comprises drying the polysilicon subjected to the final cleaning.
Thus, the polysilicon MS having the surface free from any chemical and liquid components can be obtained.
For a specific drying method, for example, the polysilicon MS may be dried with ozone. In this case, since ozone can make the surface of the polysilicon MS hydrophilic, the surface of the polysilicon MS can be prevented from being contaminated by metal particles.
In a preferred embodiment of the application, each etch is performed using an etching liquid.
In the case of the foregoing embodiment, preferably, the etching liquid EL may contain HNO 3 And HF.
In this case, the polysilicon MS will react with concentrated nitric acid to generate silicon dioxide, and the silicon dioxide will react with hydrofluoric acid to generate hexafluorosilicic acid, and nitrogen dioxide and nitric oxide gas are generated during the reaction, and the specific reaction equation is as follows:
dividing into:
Si+HNO 3 →SiO 2 +HNO 2
SiO 2 +HF→H 2 SiF 6 +H 2 O
Si+HNO 3 +HF→H 2 SiF 6 +HNO 2 +H 2 O
HNO 2 →NO 2 +NO+H 2 O
the general formula:
Si+HNO 3 +HF→H 2 SiF 6 +NO 2 +NO+H 2 O
referring to fig. 2, the embodiment of the present application further provides a system 1 for cleaning polysilicon MS, where the system 1 may include:
a determination unit 20, wherein the determination unit 20 is used for determining the granularity of the polysilicon MS;
a first etching unit 11, where the first etching unit 11 is configured to perform first etching on the polysilicon MS at a first temperature and for a first time, for example, using an etching liquid EL, where the first time is longer corresponding to the larger the granularity is;
a second etching unit 12 for performing a second etching of the polysilicon MS subjected to the first etching at a second temperature lower than the first temperature and for a second time shorter than the first time, for example, with the etching liquid EL, wherein the second time is longer corresponding to the larger particle size;
at least one subsequent etching unit, such as the single third etching unit 13 specifically shown in fig. 2, for respectively performing at least one subsequent etching on the polysilicon MS subjected to the second etching, for example, with an etching liquid EL, wherein the temperature of the at least one subsequent etching is lower than the second temperature and sequentially decreases, the time of the at least one subsequent etching is shorter than the second time and sequentially decreases, and the time of the at least one subsequent etching is longer corresponding to the larger granularity.
Specifically in fig. 2, the polysilicon MS contained in the second etching unit 12 is schematically shown by a solid line, that is, the polysilicon MS is undergoing etching by the second etching unit 12, which means that the polysilicon MS has undergone etching by the first etching unit 11, whereby the polysilicon MS contained in the first etching unit 11 is schematically shown by a broken line instead of a solid line, is transferred into the second etching unit 12 after undergoing etching by the first etching unit 11, as schematically shown by a first arrow A1 in fig. 2, which also means that the polysilicon MS will undergo etching by the third etching unit 13, whereby the polysilicon MS contained in the third etching unit 13 will also be schematically shown by a broken line instead of a solid line, is transferred into the third etching unit 13 after undergoing etching by the second etching unit 12, as schematically shown by a second arrow A2 in fig. 2, this also means that the polysilicon MS has been determined in granularity by the determination unit 20, whereby the polysilicon MS accommodated in the determination unit 20 is also schematically shown by a broken line instead of a solid line, is transferred into the first etching unit 11 after undergoing the determination by the determination unit 20, as schematically shown by a third arrow A3 in fig. 2, and in addition, the temperature of the etching liquid EL in the first etching unit 11 is higher than the temperature of the etching liquid EL in the second etching unit 12, and the temperature of the etching liquid EL in the second etching unit 12 is higher than the temperature of the etching liquid EL in the third etching unit 13, and the time for which the polysilicon MS receives the etching of the etching liquid EL in the first etching unit 11 is longer than the time for which the etching of the etching liquid EL in the second etching unit 12 is received, and the polysilicon MS is subjected to the etching of the etching liquid EL in the second etching unit 12 for a longer time than the etching of the etching liquid EL in the third etching unit 13.
Thus, since the etching of different batches is performed in different parts of the system 1, for example, when the etching temperature needs to be converted from the first temperature of the first etching to the second temperature of the second etching, the polysilicon MS can be transferred from the first etching unit 11 containing the etching liquid EL at the first temperature to the second etching unit 12 containing the etching liquid EL at the second temperature, without waiting for the cooling of the etching liquid to take time, thereby improving the production efficiency.
Unless defined otherwise, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this application belongs. The terms "first," "second," and the like, as used in this disclosure, do not denote any order, quantity, or importance, but rather are used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof, but does not exclude other elements or items. The terms "connected" or "connected," and the like, are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", etc. are used merely to indicate relative positional relationships, which may also be changed when the absolute position of the object to be described is changed.
It should be noted that: the technical schemes described in the embodiments of the present application may be arbitrarily combined without any collision.
The foregoing is merely illustrative of the present application, and the present application is not limited thereto, and any person skilled in the art will readily recognize that variations or substitutions are within the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims (10)

1. A method for cleaning polysilicon, the method comprising:
judging the granularity of the polysilicon;
performing first etching on the polysilicon at a first temperature and for a first time, wherein the first time is longer corresponding to the larger granularity;
performing a second etching of the polysilicon subjected to the first etching at a second temperature lower than the first temperature and a second time shorter than the first time, wherein the second time is longer corresponding to the larger grain size;
and performing at least one subsequent etching on the polysilicon subjected to the second etching, wherein the temperature of the at least one subsequent etching is lower than the second temperature and sequentially decreases, the time of the at least one subsequent etching is shorter than the second time and sequentially decreases, and the time of the at least one subsequent etching is longer corresponding to the larger granularity.
2. The method of claim 1, wherein the at least one subsequent etch is a single third etch.
3. The method of claim 2, wherein the first temperature is between 27 ℃ and 29 ℃, the second temperature is between 25 ℃ and 27 ℃, and the third temperature of the third etch is between 23 ℃ and 25 ℃.
4. The method of claim 2, wherein the first time is between 115 seconds and 125 seconds, the second time is between 95 seconds and 105 seconds, and the third time of the third etch is between 75 seconds and 85 seconds when the grain size of the polysilicon is greater than 50 mm.
5. The method of claim 2, wherein the first time is between 85 seconds and 95 seconds, the second time is between 65 seconds and 75 seconds, and the third time of the third etch is between 58 seconds and 62 seconds when the grain size of the polysilicon is no greater than 50 mm.
6. A method according to claim 1 or 2, characterized in that the method further comprises performing a main cleaning and a final cleaning of the polysilicon subjected to the last etching in sequence.
7. The method of claim 6, further comprising drying the polysilicon subjected to the final cleaning.
8. The method of any one of claims 1 to 5, wherein each etching is performed with an etching liquid.
9. The method according to claim 8, wherein the etching liquid contains HNO 3 And HF.
10. A system for cleaning polysilicon, the system comprising:
a determination unit for determining the granularity of the polysilicon;
the first etching unit is used for carrying out first etching on the polycrystalline silicon at a first temperature and a first time, wherein the first time is longer corresponding to the larger granularity;
a second etching unit for performing a second etching on the polysilicon subjected to the first etching at a second temperature lower than the first temperature and a second time shorter than the first time, wherein the second time is longer corresponding to the larger the granularity;
and at least one subsequent etching unit for performing at least one subsequent etching on the polysilicon subjected to the second etching, respectively, wherein the temperature of the at least one subsequent etching is lower than the second temperature and sequentially decreases, the time of the at least one subsequent etching is shorter than the second time and sequentially decreases, and the time of the at least one subsequent etching is longer corresponding to the larger granularity.
CN202310698685.0A 2023-06-13 2023-06-13 Method and system for cleaning polycrystalline silicon Pending CN116759309A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310698685.0A CN116759309A (en) 2023-06-13 2023-06-13 Method and system for cleaning polycrystalline silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310698685.0A CN116759309A (en) 2023-06-13 2023-06-13 Method and system for cleaning polycrystalline silicon

Publications (1)

Publication Number Publication Date
CN116759309A true CN116759309A (en) 2023-09-15

Family

ID=87947183

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202310698685.0A Pending CN116759309A (en) 2023-06-13 2023-06-13 Method and system for cleaning polycrystalline silicon

Country Status (1)

Country Link
CN (1) CN116759309A (en)

Similar Documents

Publication Publication Date Title
US6309467B1 (en) Method for producing a semiconductor material
CN1064986C (en) Composition for cleaning and etching electronic display and substrate
US8875720B2 (en) Apparatus and method for washing polycrystalline silicon
US6165279A (en) Method for cleaning a semiconductor wafer
JP5029539B2 (en) Method for cleaning polycrystalline silicon and method for producing polycrystalline silicon
CN102628009A (en) Cleaning liquid and cleaning method
CN105887206A (en) Method for cleaning debris in monocrystal silicon wire-cut electrical discharge machining
CN116759309A (en) Method and system for cleaning polycrystalline silicon
CN101312111B (en) Wafer cleaning and recovery method
US6663674B2 (en) Method of handling a silicon wafer
CN113718257A (en) Etching method of germanium ingot
JP6433674B2 (en) Cleaning method for polycrystalline silicon
CN101165225B (en) IC sheet epitaxy technique
US20120065116A1 (en) Cleaning liquid and cleaning method
US20040266191A1 (en) Process for the wet-chemical surface treatment of a semiconductor wafer
US20210024858A1 (en) Washing method, manufacturing method, and washing device for polycrystalline silicon
CN111180325A (en) Method for improving operating efficiency of etching machine
CN113787047B (en) Method for removing Sb-doped product corrosive liquid residues
CN104078385A (en) Silicon member and method of producing the same
WO2010016956A1 (en) Crystalline silicon substrates with improved minority carrier lifetime
CN117133630A (en) Wafer cleaning method
CN115763637A (en) Preparation method of solar cell texture
JP2001284309A (en) Treatment method of container
JP2002121689A (en) Pickling solution for stainless steel and method for pickling stainless steel
CN113871297A (en) Polysilicon stripping method without damaging gate oxide

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination