CN1167552C - Method for making ink channel - Google Patents
Method for making ink channel Download PDFInfo
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- CN1167552C CN1167552C CNB981151795A CN98115179A CN1167552C CN 1167552 C CN1167552 C CN 1167552C CN B981151795 A CNB981151795 A CN B981151795A CN 98115179 A CN98115179 A CN 98115179A CN 1167552 C CN1167552 C CN 1167552C
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- ink
- silicon substrate
- ink channel
- channel
- printing head
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Abstract
The present invention relates to a method for making an ink channel for a wafer of an ink jet print head. A wafer of an ink jet print head is formed on a silicon base plate. The method comprises the following procedures: first, selectively etching a first surface of the silicon base plate to cause the thickness of the silicon base plate to become thin, and a plurality of grooves are formed; in each groove, perforating the thinned silicon base plate so as to form a plurality of ink channels; then forming a plurality of ink chambers above a second surface of the silicon base plate. The ink chambers correspond to the ink channels and are communicated with ink containers through ink filling channels.
Description
Technical field
The present invention relates to a kind of ink-jet printer, the method for making ink channel in particularly a kind of ink printing head wafer and the ink printing head wafer of formation thereof.
Background technology
When making ink jet crystal plate, its ink channel directly formed on crystal wafer for ink jet printing head in the past, but because the thickness of silicon substrate is big, the ink channel thickness of formation is also big, and then causes ink to have very important impedance when flowing through ink channel.Such impedance existence meeting influences to some extent to the operating frequency upper limit of ink-jet printing head.In addition, when ink jet crystal plate and ink cartridges sealing bonding,, overflow the sealing that comes and have ink channel obstruction danger firmly because the size of ink channel is little.
Japanese documentation JP-A-5-147222 discloses a kind of injection record head, on channel substrate, utilizes anisotropic etching to form a recess on ink ejection face, and forms another recess in its opposition side.And then utilize anisotropic etching to form the channel part that connects described two recesses, so promptly use thick substrate, also can make the part substrate attenuation that forms channel part.
Summary of the invention
The object of the present invention is to provide a kind of method for making ink channel, earlier silicon substrate is etched into thin thickness, form ink channel afterwards again, so can improve the excessive problem of impedance.
Another object of the present invention is to provide a kind of method for making ink channel, it forms the glue groove that overflows around silicon substrate, and the glue that overflows in order to absorption reaches the problem of avoiding ink channel blocked.
The object of the present invention is achieved like this, a kind of method for making ink channel promptly is provided, be used for a crystal wafer for ink jet printing head, described crystal wafer for ink jet printing head is formed on the silicon substrate, described method for making ink channel comprises: first face to described silicon substrate carries out selective etch, make the thickness attenuation of described silicon substrate, and form several grooves; In described groove, bore a hole on the silicon substrate of attenuation, form several ink channels; Form several excessive glue grooves in this silicon substrate below, be used for absorbing and store bonding agent; And forming second top of several ink chamber in described silicon substrate, each ink chamber is corresponding one by one with each ink channel, to be communicated with ink tank.
The present invention provides a kind of crystal wafer for ink jet printing head in addition, and it is included in several ink jet units that form on the silicon substrate, more forms an excessive glue groove on the described wafer.
The present invention also provides a kind of crystal wafer for ink jet printing head, and it comprises: a silicon substrate, have one first with one second, and on described first, carry out selective etch and form several grooves; Several ink channels are formed in the described groove; At least one excessive glue groove is formed among this first of this silicon substrate; And several ink chamber, each ink chamber is corresponding one by one with each ink channel, to communicate with an ink tank.
Description of drawings
Below in conjunction with accompanying drawing, embodiments of the invention are described, wherein:
Figure 1A to 1C is a manufacturing flow chart of the present invention;
Fig. 2 is the profile according to the made ink jet crystal plate of the inventive method.
The specific embodiment
Please refer to the manufacturing flow chart of a preferred embodiment of the present invention shown in Figure 1A to 1C.This figure only illustrates one of them of a plurality of ink jet units in the crystal wafer for ink jet printing head.
Method for making ink channel of the present invention is used for a crystal wafer for ink jet printing head, and crystal wafer for ink jet printing head is formed on the silicon substrate 100.This silicon substrate 10 has two faces: first 10 and second 12, and shown in Figure 1A.
Shown in Figure 1A, the present invention's emphasis promptly carries out selective etch at first 10 of silicon substrate 100, forms several grooves 102, as the formation zone 101 of ink channel.Be that the present invention only carries out selective etch to the subregion of the silicon substrate that is about to form the ink channel place, make silicon substrate 100 attenuation after reprocessing form ink channel.
Please refer to Figure 1A, a silicon substrate 100 at first is provided, it has the two sides: first 10 and second 12.After defining the zone 101 of desire formation ink channel earlier, selective etch is carried out in this zone 101, etch a groove 102.Its purpose is to form silicon substrate 100 attenuation in the zone 101 of ink channel, and the thickness of the silicon substrate 100a after the etching is about between 50 μ m to the 200 μ m, is good with 70 μ m especially, and is low far beyond not etched thickness 600 μ m.
From the above, when directly forming ink channel 104 on without etched silicon substrate, when silicon substrate 100 thickness were thick more, the ink channel 104 that is dug out occupied just that multiaspect is long-pending more.And the present invention with silicon substrate etching attenuation after, form ink channel 104 again, therefore so can reduce the area that occupies, can increase the number of unit are ink container, can increase the number of ink jet unit, so can increase resolution.
Afterwards, with reference to Figure 1B.Behind the selective etch, form the silicon substrate 100a of a groove 102 and attenuation.Then, just form an ink channel 104, first 10 and second 12 of its through-silicon substrate 100 at the silicon substrate 100a place of this attenuation.This ink channel 104 can be made formation with anisotropic etching method, laser processing method or sandblast processing method.
Then, on second 12 of silicon substrate 100, form an ink chamber 106.Ink chamber 106 and ink channel 104 are in correspondence with each other.Ink is supplied with ink chamber's 106 inks via ink channel 104, for print job.
Please refer to one of them profile of numerous ink jet units in the crystal wafer for ink jet printing head shown in Figure 2.On first 10 of silicon substrate 100, more form an excessive glue groove 108.First 10 of silicon substrate 100 is used for binding mutually with an ink cartridges.When first 10 gluing and ink cartridges are binded mutually, unnecessary glue just can be absorbed by above-mentioned excessive glue groove 108 and store, and does not therefore just have the solation that overfills at groove 102 places and goes near the ink container and ink container is blocked the problem that ink flows that influences.
As shown in Figure 2, formed ink chamber 106 comprises a heating plate 112 on the silicon substrate 100, in order to the ink heating is vaporized to form ink droplet.Wall 110 in order to define ink chamber 106 is still arranged in addition, above wall, covered with spray nozzle sheet 114.Above ink chamber 106 only is the usefulness as an example, and any type of ink chamber all goes for the structure of silicon substrate of the present invention.
Ink is filled the conduit (not shown) to groove 102 by ink cartridges via ink, is flowed in the ink chamber 106 by ink channel 104 more afterwards.Ink, is just sprayed ink droplet by spray nozzle sheet 114, in order to print work to form ink droplet subsequently via heater 112 heating vaporizations.
In general prior art, on not etched silicon substrate, directly form ink channel.Because of silicon substrate thickness is thick, formed ink channel just occupies than large tracts of land.And the present invention with silicon substrate etching attenuation after, form ink channel 104 again, therefore so can reduce the area that occupies, can increase the number of unit are ink container, can increase the number of ink jet unit, so can increase resolution.
Therefore, feature of the present invention is earlier silicon substrate to be done selective etch to make the silicon substrate attenuation, forms ink channel afterwards again, and then reduces fluid impedance, makes that ink flowing in passage is more smooth and easy.
Another feature of the present invention is because of the silicon substrate attenuation, and the number of the ink channel that unit are can form increases, and therefore can form the ink jet unit of more ink chamber on silicon substrate, and then improves the resolution of printing.
A feature more of the present invention is to form an excessive glue groove on silicon substrate, make when ink jet crystal plate and ink cartridges bonding, when overflowing, be able to be absorbed in order to the bonding glue that binds and store, can not have influence on flowing of ink, more can reduce the fraction defective that ink gun encapsulates by excessive glue groove.
Claims (12)
1. method for making ink channel, be used for a crystal wafer for ink jet printing head, described crystal wafer for ink jet printing head is formed on the silicon substrate, it is characterized in that, described method for making ink channel comprises: first face to described silicon substrate carries out selective etch, make the thickness attenuation of described silicon substrate, and form several grooves; In described groove, bore a hole on the silicon substrate of attenuation, form several ink channels; Form several excessive glue grooves in this silicon substrate below, be used for absorbing and store bonding agent; And forming second top of several ink chamber in described silicon substrate, each ink chamber is corresponding one by one with each ink channel, to be communicated with ink tank.
2. the method for claim 1 is characterized in that, the thickness of described ink channel is between 50 μ m to 200 μ m.
3. method as claimed in claim 2 is characterized in that, the thickness of described ink channel is 70 μ m.
4. the method for claim 1 is characterized in that, described ink channel forms with the anisotropic etching method.
5. the method for claim 1 is characterized in that, described ink channel forms with laser processing method.
6. the method for claim 1 is characterized in that, described ink channel forms with the sandblast processing method.
7. the method for claim 1 is characterized in that, described ink channel is communicated with each other.
8. the method for claim 1 is characterized in that, described ink channel is independent separately.
9. a crystal wafer for ink jet printing head is characterized in that, it is included in several ink jet units that form on the silicon substrate, more forms an excessive glue groove on the described wafer.
10. crystal wafer for ink jet printing head is characterized in that it comprises: a silicon substrate, have one first with one second, and on described first, carry out selective etch and form several grooves; Several ink channels are formed in the described groove; At least one excessive glue groove is formed among this first of this silicon substrate; And several ink chamber, each ink chamber is corresponding one by one with each ink channel, to communicate with an ink tank.
11. crystal wafer for ink jet printing head as claimed in claim 10 is characterized in that, described ink channel is cross connection each other.
12. crystal wafer for ink jet printing head as claimed in claim 10 is characterized in that, described ink channel is independent separately.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB981151795A CN1167552C (en) | 1998-06-29 | 1998-06-29 | Method for making ink channel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB981151795A CN1167552C (en) | 1998-06-29 | 1998-06-29 | Method for making ink channel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1240713A CN1240713A (en) | 2000-01-12 |
| CN1167552C true CN1167552C (en) | 2004-09-22 |
Family
ID=5224445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB981151795A Expired - Fee Related CN1167552C (en) | 1998-06-29 | 1998-06-29 | Method for making ink channel |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1167552C (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1107592C (en) * | 2000-01-12 | 2003-05-07 | 威硕科技股份有限公司 | Manufacturing method of chip of ink gun |
| CN1111117C (en) * | 2000-01-12 | 2003-06-11 | 威硕科技股份有限公司 | Ink gun for printer and its manufacturing method |
| US20050036004A1 (en) * | 2003-08-13 | 2005-02-17 | Barbara Horn | Methods and systems for conditioning slotted substrates |
| JP4353261B2 (en) * | 2007-02-23 | 2009-10-28 | ブラザー工業株式会社 | Liquid discharge head |
-
1998
- 1998-06-29 CN CNB981151795A patent/CN1167552C/en not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| CN1240713A (en) | 2000-01-12 |
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Owner name: YULIN TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE Effective date: 20091120 |
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Effective date of registration: 20091120 Address after: Taipei city of Taiwan Province Patentee after: Institute for Information Industry Address before: Hsinchu County of Taiwan Province Patentee before: Industrial Technology Research Institute |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20040922 Termination date: 20120629 |