DE10345962A1 - Substrate and method of forming a substrate for a fluid ejection device - Google Patents
Substrate and method of forming a substrate for a fluid ejection device Download PDFInfo
- Publication number
- DE10345962A1 DE10345962A1 DE10345962A DE10345962A DE10345962A1 DE 10345962 A1 DE10345962 A1 DE 10345962A1 DE 10345962 A DE10345962 A DE 10345962A DE 10345962 A DE10345962 A DE 10345962A DE 10345962 A1 DE10345962 A1 DE 10345962A1
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- Prior art keywords
- substrate
- mask layer
- trench
- forming
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 161
- 238000000034 method Methods 0.000 title claims abstract description 61
- 239000012530 fluid Substances 0.000 title claims description 68
- 239000000463 material Substances 0.000 claims description 42
- 238000005530 etching Methods 0.000 claims description 34
- 239000000945 filler Substances 0.000 claims description 9
- 239000002210 silicon-based material Substances 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 239000003518 caustics Substances 0.000 claims 2
- 230000000873 masking effect Effects 0.000 description 25
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- 238000010304 firing Methods 0.000 description 9
- 238000003486 chemical etching Methods 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 6
- 238000007641 inkjet printing Methods 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000000708 deep reactive-ion etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 1
- 239000005041 Mylar™ Substances 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- RVSGESPTHDDNTH-UHFFFAOYSA-N alumane;tantalum Chemical compound [AlH3].[Ta] RVSGESPTHDDNTH-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000004870 electrical engineering Methods 0.000 description 1
- 230000005662 electromechanics Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000000123 paper Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- -1 transparencies Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1628—Manufacturing processes etching dry etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1601—Production of bubble jet print heads
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1607—Production of print heads with piezoelectric elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1629—Manufacturing processes etching wet etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1631—Manufacturing processes photolithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1632—Manufacturing processes machining
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1632—Manufacturing processes machining
- B41J2/1634—Manufacturing processes machining laser machining
Abstract
Ein Verfahren zum Bilden einer Öffnung durch ein Substrat mit einer ersten Seite und einer zweiten Seite gegenüber der ersten Seite umfaßt ein Bilden eines Grabens in der ersten Seite des Substrats, ein Bilden einer Maskenschicht innerhalb des Grabens, ein Bilden von zumindest einem Loch in die Maskenschicht, ein Befüllen des Grabens und des zumindest einen Lochs, ein Bilden eines ersten Abschnitts der Öffnung in dem Substrat von der zweiten Seite des Substrats zur Maskenschicht und ein Bilden eines zweiten Abschnitts der Öffnung in dem Substrat von der zweiten Seite des Substrats durch das zumindest eine Loch in der Maskenschicht zur ersten Seite des Substrats.A method of forming an opening through a substrate having a first side and a second side opposite the first side includes forming a trench in the first side of the substrate, forming a mask layer within the trench, forming at least one hole in the mask layer filling the trench and the at least one hole, forming a first portion of the opening in the substrate from the second side of the substrate to the mask layer, and forming a second portion of the opening in the substrate from the second side of the substrate through the at least one Hole in the mask layer to the first side of the substrate.
Description
Die vorliegende Erfindung bezieht sich allgemein auf Fluidausstoßvorrichtungen und spezieller auf ein Substrat für eine Fluidausstoßvorrichtung.The present invention relates generally relate to fluid ejection devices and more particularly to a substrate for a fluid ejection device.
Bei einigen Fluidausstoßvorrichtungen, wie z. B. Druckköpfen, ist ein Tropfenausstoßelement auf einer Vorderseite eines Substrats gebildet, und ein Fluid wird an eine Ausstoßkammer des Tropfenausstoßelements durch eine Öffnung oder einen Schlitz in dem Substrat geleitet. Häufig ist das Substrat ein Siliziumwafer, und der Schlitz ist in dem Wafer durch chemisches Ätzen gebildet worden. Die existierenden Verfahren zum Bilden des Schlitzes durch das Substrat umfassen ein Ätzen in das Substrat von der Rückseite des Substrats zur Vorderseite des Substrats. Die Rückseite des Substrats ist als eine Seite des Substrats definiert, gegenüber der das Tropfenausstoßelement gebildet ist.With some fluid ejection devices, such as B. printheads, is a drop ejection element is formed on a front side of a substrate, and a fluid becomes to an exhaust chamber of the drop ejection element through an opening or passed a slot in the substrate. Often the substrate is a silicon wafer, and the slot is formed in the wafer by chemical etching Service. The existing methods of forming the slot through the substrate includes etching into the substrate from the back of the substrate to the front of the substrate. The backside of the substrate is defined as one side of the substrate against which the drop ejection element is formed.
Leider kann das Ätzen in das Substrat von der Rückseite bis hindurch zur Vorderseite zu einer Fehlerausrichtung des Schlitzes an der Vorderseite und/oder einer variierenden Breite des Schlitzes an der Vorderseite führen.Unfortunately, the etching into the substrate from the back all the way to the front for misalignment of the slot at the front and / or a varying width of the slot lead at the front.
Dementsprechend besteht ein Bedarf, die Bildung des Schlitzes durch das Substrat zu steuern.Accordingly, there is a need control the formation of the slot through the substrate.
Es ist eine Aufgabe der vorliegenden Erfindung, ein Verfahren und eine Vorrichtung zu schaffen, um einen Schlitz in einem Substrat für eine Fluidausstoßvorrichtunq in gesteuerter Weise zu bilden.It is a task of the present Invention to provide a method and an apparatus for a Slot in a substrate for a fluid ejection device to form in a controlled manner.
Diese Aufgabe wird durch ein Verfahren gemäß Anspruch 1, sowie ein Substrat gemäß Anspruch 9 gelöst.This task is accomplished through a process according to claim 1, and a substrate according to claim 9 solved.
Ein Verfahren zum Bilden einer Öffnung durch ein Substrat mit einer ersten Seite und einer zweiten Seite gegenüber der ersten Seite umfaßt ein Bilden eines Grabens in der ersten Seite des Substrats, ein Bilden einer Maskenschicht mit dem Graben, ein Bilden von zumindest einem Loch in der Maskenschicht, ein Befüllen des Grabens und des zumindest einen Lochs, ein Bilden eines ersten Abschnitts der Öffnung in dem Substrat von der zweiten Seite des Substrats zur Maskenschicht und ein Bilden eines zweiten Abschnitts der Öffnung in dem Substrat von der zweiten Seite des Substrats durch das zumindest eine Loch in der Maskenschicht zur ersten Seite des Substrats.A method of forming an opening through a substrate with a first side and a second side opposite the first page includes forming a trench in the first side of the substrate Forming a mask layer with the trench, at least forming a hole in the mask layer, filling the trench and the at least one Hole, forming a first portion of the opening in the substrate of FIG the second side of the substrate to the mask layer and forming a second section of the opening in the substrate from the second side of the substrate through the at least one Hole in the mask layer to the first side of the substrate.
Bevorzugte Ausführungsbeispiele der vorliegenden Erfindung werden nachstehend Bezug nehmend auf die beiliegenden Zeichnungen näher erläutert. Es zeigen:Preferred embodiments of the present Invention are hereinafter referred to with reference to the accompanying Drawings closer explained. Show it:
In der nachstehenden ausführlichen Beschreibung der bevorzugten Ausführungsbeispiel wird auf die beigefügten Zeich nungen Bezug genommen, die einen Teil derselben bilden, und in denen mittels einer Darstellung spezifische Ausführungsbeispiele gezeigt sind, in denen die Erfindung praktiziert werden kann. Diesbezüglich wird unter Bezugnahme auf die Ausrichtung der beschriebenen Figuren eine richtungsweisende Terminologie verwendet, wie z. B. „oben", „unten", „vorne", „hinten", „führend", „nachlaufend" etc. Weil die Komponenten der vorliegenden Erfindung in einer Anzahl von unterschiedlichen Ausrichtungen positioniert sein können, wird die richtungsweisende Terminologie zu Darstellungszwecken verwendet und gilt in keiner Weise als Einschränkung. Es wird darauf hingewiesen, daß andere Ausführungsbeispiele verwendet werden können und strukturelle oder logische Veränderungen vorgenommen werden können, ohne vom Schutzbereich der vorliegenden Erfindung abzuweichen. Die nachstehende ausführliche Beschreibung ist daher nicht als Einschränkung aufzufassen, und der Schutzbereich der vorliegenden Erfindung ist durch die angehängten Ansprüche definiert.In the detailed below Description of the preferred embodiment is based on the attached Drawings referred to, which form part of the same, and in which specific exemplary embodiments are illustrated are shown in which the invention can be practiced. In this regard with reference to the orientation of the figures described, a trend-setting Terminology used, such as B. "top", "bottom", "front", "back", "leading", "trailing" etc. Because the components of the present invention in a number of different Alignments can be positioned, the trend-setting Terminology used for purposes of illustration and does not apply in any Way as a limitation. It should be noted that other embodiments can be used and structural or logical changes are made can, without departing from the scope of the present invention. The detailed below The description is therefore not to be interpreted as a restriction, and the Scope of the present invention is defined by the appended claims.
Die Tintenstrahldruckkopfanordnung
Die Tintenvorratsanordnung
Die Befestigungsanordnung
Die elektronische Steuerung
Bei einem Ausführungsbeispiel liefert die elektronische
Steuerung
Bei einem Ausführungsbeispiel umfaßt jedes Tropfenausstoßelement
Die Dünnfilmstruktur
Bei einem Ausführungsbeispiel fließt ein Fluid
während
des Betriebs von Fluidzuführschlitz
Beispielhafte Ausführungsbeispiele
der Fluidausstoßvorrichtung
Bei einem Ausführungsbeispiel umfaßt jedes Tropfenausstoßelement
Bei einem Ausführungsbeispiel fließt das Fluid
während
des Betriebs vom Fluidzuführschlitz
Wie bei dem Ausführungsbeispiel von
Bei einem Ausführungsbeispiel weist das Substrat
Bei einem Ausführungsbeispiel ist das Füllmaterial
Bei einem Ausführungsbeispiel stellt das Substrat
Wie bei dem Ausführungsbeispiel von
Bei einem Ausführungsbeispiel, wie in
Bei einem Ausführungsbeispiel ist die Maskierungsschicht
Anschließend, wie in dem Ausführungsbeispiel
von
Nachdem der Graben
Wie bei dem Ausführungsbeispiel von
Anschließend wird, wie in dem Ausführungsbeispiel
von
Bei einem Ausführungsbeispiel ist die Maskierungsschicht
Anschließend werden die Löcher
Bei einem Ausführungsbeispiel sind die Löcher
Nachdem die Löcher
Wie in dem Ausführungsbeispiel von
Bei einem Ausführungsbeispiel wird das Füllmaterial
Ebenfalls wird eine Maskierungsschicht
Anschließend wird ein erster Abschnitt
Wie bei dem Ausführungsbeispiel von
Bei einem Ausführungsbeispiel wird die Öffnung
Während des Tief-RIE wird alternativ ein freigelegter Abschnitt mit einem reaktiven Ätzgas geätzt und beschichtet, bis ein Loch gebildet ist. Bei einem exemplarischen Ausführungsbeispiel erzeugt das reaktive Ätzgas ein Fluorradikal, das das Material chemisch und/oder physisch ätzt. Bei diesem exemplarischen Ausführungsbeispiel wird eine Polymerbeschichtung, die gegenüber dem verwendeten Ätzmittel selektiv ist, auf die Innenoberflächen des zu bildenden Lochs einschließlich der Seitenwände und des Bodens aufgebracht. Die Beschichtung wird durch Verwendung eine Kohlenstoff-Fluorgases erzeugt, das (CF2)n, ein teflonartiges Material oder ein teflonerzeugendes Monomer, auf diesen Oberflächen anordnet. Bei diesem Ausführungsbeispiel verhindert das Polymer im wesentlichen ein Ätzen der Seitenwände während der anschließenden Ätzprozesse. Die Gase für das Ätzmittel wechseln sich mit den Gasen zum Bilden der Beschichtung auf der Innenseite des Lochs ab.Alternatively, during the deep RIE, an exposed portion is etched with a reactive etching gas and coated until a hole is formed. In an exemplary embodiment, the reactive etch gas generates a fluorine radical that chemically and / or physically etches the material. In this exemplary embodiment, a polymer coating that is selective with respect to the etchant used is applied to the inner surfaces of the hole to be formed, including the side walls and the bottom. The coating is created using a carbon fluorine gas that places (CF 2 ) n , a teflon-like material or a teflon-producing monomer, on these surfaces. In this embodiment, the polymer substantially prevents the sidewalls from being etched during the subsequent etching processes. The gases for the etchant alternate with the gases to form the coating on the inside of the hole.
Beim Ätzen des ersten Abschnitts
Obgleich sich die vorstehende Beschreibung auf
die Einbindung des Substrats
Obwohl spezifische Ausführungsbeispiele hierin zu Beschreibungszwecken eines bevorzugten Ausführungsbeispiels dargestellt und beschrieben worden sind, werden Fachleute darauf hingewiesen, daß viele verschiedene alternative und/oder entsprechende Implementierungen, die laut Berechnung den gleichen Zweck erzielen sollen, durch die spezifischen Ausführungsbeispiele ersetzt werden können, die hierin gezeigt und beschrieben sind, ohne vom Schutzbereich der vorliegenden Erfindung abzuweichen. Fachleute in der Chemie, Mechanik, Elektromechanik, Elektrotechnik und Informatik werden ohne weiteres erkennen, daß die vorliegende Erfindung in sehr vielen verschiedenen Ausführungsbeispielen implementiert sein kann. Diese Anmeldung soll beliebige Anpassungen und Variationen der bevorzugten Ausführungsbeispiele, die hierin erörtert wurden, abdecken. Daher wird die feste Absicht verfolgt, daß diese Erfindung nur durch die Ansprüche und die Entsprechungen derselben beschränkt sein soll.Although specific embodiments are herein shown for descriptive purposes of a preferred embodiment and have been described, it will be appreciated by those skilled in the art that many various alternative and / or corresponding implementations, which, according to the calculation, are intended to achieve the same purpose through which specific embodiments can be replaced that shown and described herein without departing from the scope of the to deviate from the present invention. Specialists in chemistry, mechanics, Electromechanics, electrical engineering and computer science are readily available recognize that the present invention in very many different embodiments can be implemented. This registration should make any adjustments and Variations of the preferred embodiments, discussed here cover. Therefore, the firm intention is that this Invention only through the claims and the correspondences of the same should be limited.
Claims (36)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/347,888 US6821450B2 (en) | 2003-01-21 | 2003-01-21 | Substrate and method of forming substrate for fluid ejection device |
US10/347888 | 2003-01-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE10345962A1 true DE10345962A1 (en) | 2004-08-05 |
DE10345962B4 DE10345962B4 (en) | 2014-05-08 |
Family
ID=32681611
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE10345962.6A Expired - Fee Related DE10345962B4 (en) | 2003-01-21 | 2003-10-02 | A substrate and method of forming a substrate for a fluid ejection device |
Country Status (5)
Country | Link |
---|---|
US (2) | US6821450B2 (en) |
JP (1) | JP4223965B2 (en) |
CN (1) | CN100528571C (en) |
DE (1) | DE10345962B4 (en) |
TW (1) | TWI288707B (en) |
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US10469948B2 (en) | 2014-05-23 | 2019-11-05 | Infineon Technologies Ag | Method for manufacturing an opening structure and opening structure |
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US7128843B2 (en) * | 2003-04-04 | 2006-10-31 | Hrl Laboratories, Llc | Process for fabricating monolithic membrane substrate structures with well-controlled air gaps |
US7105456B2 (en) * | 2004-10-29 | 2006-09-12 | Hewlett-Packard Development Company, Lp. | Methods for controlling feature dimensions in crystalline substrates |
JP2006126116A (en) * | 2004-11-01 | 2006-05-18 | Canon Inc | Manufacturing method of substrate for filter, ink jet recording head and its manufacturing method |
TWI250629B (en) | 2005-01-12 | 2006-03-01 | Ind Tech Res Inst | Electronic package and fabricating method thereof |
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2003
- 2003-01-21 US US10/347,888 patent/US6821450B2/en not_active Expired - Fee Related
- 2003-07-31 TW TW092120994A patent/TWI288707B/en not_active IP Right Cessation
- 2003-10-02 DE DE10345962.6A patent/DE10345962B4/en not_active Expired - Fee Related
- 2003-11-21 CN CNB2003101164513A patent/CN100528571C/en not_active Expired - Fee Related
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2004
- 2004-01-19 JP JP2004011074A patent/JP4223965B2/en not_active Expired - Fee Related
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US10469948B2 (en) | 2014-05-23 | 2019-11-05 | Infineon Technologies Ag | Method for manufacturing an opening structure and opening structure |
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US20040141027A1 (en) | 2004-07-22 |
US7018015B2 (en) | 2006-03-28 |
CN100528571C (en) | 2009-08-19 |
DE10345962B4 (en) | 2014-05-08 |
TW200413181A (en) | 2004-08-01 |
JP2004225158A (en) | 2004-08-12 |
US6821450B2 (en) | 2004-11-23 |
JP4223965B2 (en) | 2009-02-12 |
US20050088491A1 (en) | 2005-04-28 |
TWI288707B (en) | 2007-10-21 |
CN1517216A (en) | 2004-08-04 |
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