CN116754912A - Temperature control method for IGBT test - Google Patents
Temperature control method for IGBT test Download PDFInfo
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- CN116754912A CN116754912A CN202310598509.XA CN202310598509A CN116754912A CN 116754912 A CN116754912 A CN 116754912A CN 202310598509 A CN202310598509 A CN 202310598509A CN 116754912 A CN116754912 A CN 116754912A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2608—Circuits therefor for testing bipolar transistors
- G01R31/2619—Circuits therefor for testing bipolar transistors for measuring thermal properties thereof
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Abstract
The invention relates to the technical field of semiconductors and discloses a temperature control method for IGBT test. The method comprises the steps of obtaining theoretical temperature Tj1 of an IGBT chip and theoretical temperature T41 of NTC; calculating target power P2 of the heating device and target temperature T42 of the NTC when the IGBT module is heated and tested; comparing the theoretical temperature T41 of the NTC with the target temperature T42 of the NTC; when the difference between the theoretical temperature T41 of the NTC and the target temperature T42 of the NTC exceeds the allowable range, the target power P2 is adjusted to maintain the required target temperature Tj2 of the IGBT chip. The actual temperature of the IGBT chip is represented by the temperature of the NTC, so that the IGBT chip always maintains the required target temperature Tj2 when the IGBT module is tested, and the accurate and effective control of the junction temperature of the IGBT module is realized.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a temperature control method for IGBT test.
Background
Currently, IGBTs (Insulate Gate Bipolar Transistor, insulated gate bipolar transistors) have been widely used. The power semiconductor device has the advantages of simple driving circuit, good balance between steady-state loss and switching loss and the like. In order to improve the yield of the packaging stage, the high-temperature leakage characteristic of the chip needs to be tested. However, for high temperature testing of IGBTs, how to accurately control the test temperature has been a major challenge in the industry. If the temperature of the IGBT module cannot be accurately judged, the consistency of the test temperature cannot be ensured, and the inconsistent test temperature can cause that the quality of each product cannot be kept consistent.
The temperature measurement scheme of the traditional IGBT module is mainly used for measuring the temperature of the thermocouple wires in a direct contact mode, the measured temperature is influenced by a heating tool, the temperature of a thermocouple contact point is influenced by heat dissipation and the influence caused by poor contact of the thermocouple contact point, the temperature of the IGBT module cannot be accurately and effectively measured, heat is generated in the test of the IGBT module, the junction temperature inside the IGBT module is influenced, and the problem that a test value cannot represent the actual condition exists.
Disclosure of Invention
The invention provides a temperature control method for IGBT test, which aims to solve the technical problem that the junction temperature of an IGBT module cannot be accurately and effectively controlled by the existing method.
The invention provides a temperature control method for IGBT test, which comprises the following steps:
measuring and acquiring a first data set used for representing the working parameters of the system in a first state that the IGBT high-temperature test system is not loaded with the IGBT module; acquiring a theoretical temperature Tj1 of the IGBT chip and a theoretical temperature T41 of the NTC; calculating a second data set for representing the thermal resistance of the IGBT high-temperature test system in a second state of loading the IGBT module and heating based on the first data set, the theoretical temperature Tj1 of the IGBT chip and the theoretical temperature T41 of the NTC; calculating the target power P2 of the heating device and the target temperature T42 of the NTC of the IGBT high-temperature test system in a third state of loading the IGBT module and heating and testing based on the target temperature Tj2 of the IGBT chip required by the set test of the IGBT module and combining the second data set; in the third state, controlling the heating device to heat the IGBT module with the target power P2; comparing the theoretical temperature T41 of the NTC with the target temperature T42 of the NTC; when the difference between the theoretical temperature T41 of the NTC and the target temperature T42 of the NTC exceeds the allowable range, the target power P2 is adjusted, so that the IGBT chip maintains the required target temperature Tj2 when the IGBT module is tested.
Further, the first data set includes: ambient temperature Ta, temperature T1 of heating device and heating toolTemperature T2, temperature T3 of IGBT module housing, resistance R of NTC NTC Voltage V C Current I C And the theoretical power P1 of the heating device.
Further, the step of obtaining the theoretical temperature Tj1 of the IGBT chip includes:
the IGBT high-temperature test system is utilized to measure the corresponding minimum current I C Voltage V of (2) C Based on formula V C =kxtj 1, calculating the theoretical temperature Tj1 of the IGBT chip; in the above formula, K is a known constant.
Further, the step of obtaining the theoretical temperature T41 of the NTC includes:
resistor R based on the NTC NTC The theoretical temperature T41 of the NTC is calculated in combination with the known RT conversion formula.
Further, the second data set includes a thermal resistance R1 from the heating device to the heating tool, a thermal resistance R2 from the heating tool to the IGBT module housing, a thermal resistance R3 from the IGBT module housing to the NTC, a thermal resistance R4 from the NTC to the IGBT chip, and a thermal resistance R5 from the heating device to air.
Further, the step of calculating the second data set comprises based on the following formula:
T2＝T1-R1×P1；
T3＝T2-R2×P1；
T41＝T3-R3×P1；
Tj1＝T41-R4×P1；
Ta＝T1-R5×P1；
and (3) establishing a thermal resistance model as fixed thermal resistance, heating and testing for multiple times, fitting, and calculating to obtain the values of R1, R2, R3, R4 and R5.
Further, the step of calculating the target power P2 of the heating device includes calculating a value of the target power P2 based on the formula tj2=ta- (r1+r2+r3+r4-r5) ×p2.
Further, the step of calculating the target temperature T42 of the NTC includes calculating a value of the target temperature T42 based on the formula tj2=t42-r4×p2.
Further, when the difference between the theoretical temperature T41 of the NTC and the target temperature T42 of the NTC is beyond the allowable range, the step of adjusting the target power P2 includes:
when the target temperature T42 of the NTC is greater than the theoretical temperature T41 of the NTC, the target power P2 of the heating device is reduced to the balance power P3, wherein the calculation formula of the balance power P3 is as follows:
P3＝P2×[(T42-T41)÷T41]
until the difference between the theoretical temperature T41 of the NTC and the target temperature T42 of the NTC is within an allowable range.
Further, when the difference between the theoretical temperature T41 of the NTC and the target temperature T42 of the NTC is beyond the allowable range, the step of adjusting the target power P2 further includes:
when the target temperature T42 of the NTC is less than the theoretical temperature T41 of the NTC, the target power P2 of the heating device is increased.
The technical scheme provided by the invention has the beneficial effects that: the target power P2 of the heating device during testing the IGBT module is adjusted, so that the target temperature T42 of the NTC of the IGBT module is as close to the theoretical temperature T41 of the NTC as possible, the actual temperature of the IGBT chip is represented by the temperature of the NTC, the IGBT chip always maintains the required target temperature Tj2 during testing the IGBT module, accurate and effective control of the junction temperature of the IGBT module is realized, the temperature of the IGBT module is consistent during high-temperature testing, and the reliability of the quality of the IGBT module is ensured.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic flow chart of a temperature control method for IGBT testing according to the present invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The temperature control method for IGBT testing as shown in fig. 1 includes the steps of:
s1, measuring and acquiring a first data set used for representing the working parameters of the system in a first state that the IGBT high-temperature test system is not loaded with the IGBT module.
Wherein the first data set comprises: ambient temperature Ta, temperature T1 of heating device, temperature T2 of heating tool, temperature T3 of IGBT module shell, resistance R of NTC NTC Voltage V C Current I C And the theoretical power P1 of the heating device.
The acquisition result of the first data set is realized by adopting the prior art. In this embodiment, the IGBT high temperature test system adopts an existing system. The heating device comprises a heating rod of the IGBT high-temperature test system.
S2, acquiring a theoretical temperature Tj1 of the IGBT chip and a theoretical temperature T41 of the NTC.
The step of obtaining the theoretical temperature Tj1 of the IGBT chip comprises the following steps:
corresponding minimum current I is measured by using IGBT high-temperature test system C Voltage V of (2) C Based on formula V C =k× tj1, calculating the theoretical temperature Tj1 of the IGBT chip; in the above formula, K is a known constant. The value of K is known to those skilled in the art and can be queried from the product manual of the IGBT module. The minimum current I C The IGBT module is heated when the IGBT high-temperature test system works. In other words, when the current I C The IGBT module is small enough and does not generate heat, and the corresponding voltage V at the moment is measured C . It is understood that the theoretical temperature Tj1 of the IGBT chip is a theoretical value of the IGBT module in the non-test state, and the purpose of the theoretical temperature Tj1 is to calculate the thermal resistance R4 of the NTC to the IGBT chip.
The step of obtaining the theoretical temperature T41 of the NTC comprises:
based on the resistance R of the NTC that has been measured NTC The theoretical temperature T41 of the NTC is calculated in combination with the RT conversion formula provided by the NTC supplier.
And S3, calculating a second data set for representing the system thermal resistance of the IGBT high-temperature test system in a second state of loading the IGBT module and heating based on the first data set, the theoretical temperature Tj1 of the IGBT chip and the theoretical temperature T41 of the NTC.
The second data set comprises a thermal resistance R1 from the heating device to the heating tool, a thermal resistance R2 from the heating tool to the IGBT module shell, a thermal resistance R3 from the IGBT module shell to the NTC, a thermal resistance R4 from the NTC to the IGBT chip and a thermal resistance R5 from the heating device to the air.
The second data set is calculated based on the following formula:
T2＝T1-R1×P1；
T3＝T2-R2×P1；
T41＝T3-R3×P1；
Tj1＝T41-R4×P1；
Ta＝T1-R5×P1；
the ambient temperature Ta, the temperature T1 of the heating device, the temperature T2 of the heating tool, the temperature T3 of the IGBT module housing, and the theoretical power P1 of the heating device in the first data set may all be considered as known values.
And (3) establishing a thermal resistance model as fixed thermal resistance, heating and testing for multiple times, and fitting to calculate the values of R1, R2, R3, R4 and R5 in the formula.
S4, calculating the target power P2 of the heating device and the target temperature T42 of the NTC in a third state that the IGBT high-temperature test system is loaded with the IGBT module and is heated and tested based on the target temperature Tj2 of the IGBT chip required by the set test of the IGBT module and by combining the second data set.
Specifically, the value of the target power P2 of the heating device is calculated based on the following formula:
Tj2＝Ta-(R1+R2+R3+R4-R5)×P2
in the above equation, tj2 is a target value given when the IGBT module is tested by the IGBT high temperature test system, that is, a temperature value that the IGBT chip is expected to always hold when the IGBT module is tested. The temperature of the IGBT module is consistent during high-temperature test, and the reliability of the quality of the IGBT module is ensured.
The ambient temperature Ta is a known value in the first data set. The values of R1, R2, R3, R4, R5 have also been calculated so that, given the value of the specific target temperature Tj2, the value of the target power P2 can be determined.
The value of the target temperature T42 of the NTC is calculated based on the following formula:
Tj2＝T42-R4×P2
in the above equation, tj2 is a target value given when the IGBT module is tested by the IGBT high temperature test system, and is a known value. The values of R4 and target power P2 have been found in previous calculations. Thus, the target temperature T42 of the NTC may be directly determined.
S5, after the numerical values are obtained, heating test is started to the IGBT module.
In the third state, i.e., the IGBT high temperature test system is in a state where the IGBT module is loaded and heating and testing are performed. The heating device is controlled to heat the IGBT module at the target power P2.
The theoretical temperature T41 of the NTC and the target temperature T42 of the NTC are compared.
When the difference between the theoretical temperature T41 of the NTC and the target temperature T42 of the NTC exceeds the allowable range, the allowable range may be-0.1 ℃ to +0.1 ℃, and the target power P2 is adjusted, so that the IGBT chip maintains the required target temperature Tj2 when the IGBT module is tested.
For example, when the target temperature T42 of the NTC is greater than the theoretical temperature T41 of the NTC, the difference between the theoretical temperature T41 of the NTC and the target temperature T42 of the NTC is greater than 1 ℃. Reducing the target power P2 of the heating device to the balance power P3, wherein the calculation formula of the balance power P3 is as follows:
P3＝P2×[(T42-T41)÷T41]
until the difference between the theoretical temperature T41 of the NTC and the target temperature T42 of the NTC is within the allowable range.
When the target temperature T42 of the NTC is less than the theoretical temperature T41 of the NTC, the target power P2 of the heating means is increased.
Because the temperature of the IGBT chip is difficult to obtain, the target temperature T42 of the NTC of the IGBT module is as close as possible to the theoretical temperature T41 of the NTC by adjusting the target power P2 of the heating device when the IGBT module is tested, the actual temperature of the IGBT chip is represented by the temperature of the NTC, the IGBT chip always maintains the required target temperature Tj2 when the IGBT module is tested, the accurate and effective control of the junction temperature of the IGBT module is realized, the temperature of the IGBT module is consistent when the IGBT module is tested at a high temperature, and the reliability of the quality of the IGBT module is ensured.
In the description of the present invention, it should be noted that the azimuth or positional relationship indicated by the terms "upper", "lower", etc. are based on the azimuth or positional relationship shown in the drawings, and are merely for convenience of describing the present invention and simplifying the description, and are not indicative or implying that the apparatus or element in question must have a specific azimuth, be constructed and operated in a specific azimuth, and thus should not be construed as limiting the present invention. Unless specifically stated or limited otherwise, the terms "mounted," "connected," and "coupled" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
It should be noted that in the present invention, relational terms such as "first" and "second" and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The foregoing is only a specific embodiment of the invention to enable those skilled in the art to understand or practice the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A temperature control method for IGBT testing, comprising the steps of:
measuring and acquiring a first data set used for representing the working parameters of the system in a first state that the IGBT high-temperature test system is not loaded with the IGBT module;
acquiring a theoretical temperature Tj1 of the IGBT chip and a theoretical temperature T41 of the NTC;
calculating a second data set for representing the thermal resistance of the IGBT high-temperature test system in a second state of loading the IGBT module and heating based on the first data set, the theoretical temperature Tj1 of the IGBT chip and the theoretical temperature T41 of the NTC;
calculating the target power P2 of the heating device and the target temperature T42 of the NTC of the IGBT high-temperature test system in a third state of loading the IGBT module and heating and testing based on the target temperature Tj2 of the IGBT chip required by the set test of the IGBT module and combining the second data set;
in the third state, controlling the heating device to heat the IGBT module with the target power P2;
comparing the theoretical temperature T41 of the NTC with the target temperature T42 of the NTC; when the difference between the theoretical temperature T41 of the NTC and the target temperature T42 of the NTC exceeds the allowable range, the target power P2 is adjusted, so that the IGBT chip maintains the required target temperature Tj2 when the IGBT module is tested.
2. The temperature control method for IGBT testing of claim 1 wherein the first data set comprises: ambient temperature Ta, temperature T1 of heating device, temperature T2 of heating tool, temperature T3 of IGBT module shell, resistance R of NTC NTC Voltage V C Current I C And the theoretical power P1 of the heating device.
3. The temperature control method for IGBT testing according to claim 2, wherein the step of obtaining the theoretical temperature Tj1 of the IGBT chip includes:
the IGBT high-temperature test system is utilized to measure the corresponding minimum current I C Voltage V of (2) C Based on formula V C =kxtj 1, calculating the theoretical temperature Tj1 of the IGBT chip; in the above formula, K is a known constant.
4. The temperature control method for IGBT testing according to claim 3, wherein the obtaining of the theoretical temperature T41 of the NTC includes:
resistor R based on the NTC NTC The theoretical temperature T41 of the NTC is calculated in combination with the known RT conversion formula.
5. The method of claim 4, wherein the second data set includes a thermal resistance R1 of a heating device to a heating tool, a thermal resistance R2 of a heating tool to an IGBT module housing, a thermal resistance R3 of an IGBT module housing to an NTC, a thermal resistance R4 of an NTC to an IGBT chip, and a thermal resistance R5 of a heating device to air.
6. The temperature control method for IGBT testing of claim 5 wherein the step of calculating the second data set includes based on the following equation:
T2＝T1-R1×P1；
T3＝T2-R2×P1；
T41＝T3-R3×P1；
Tj1＝T41-R4×P1；
Ta＝T1-R5×P1；
and (3) establishing a thermal resistance model as fixed thermal resistance, heating and testing for multiple times, fitting, and calculating to obtain the values of R1, R2, R3, R4 and R5.
7. The temperature control method for IGBT testing according to claim 6, wherein the step of calculating the target power P2 of the heating device includes calculating the value of the target power P2 based on the formula tj2=ta- (r1+r2+r3+r4-R5) ×p2.
8. The temperature control method for IGBT testing according to claim 7, wherein the step of calculating the target temperature T42 of the NTC includes calculating a value of the target temperature T42 based on the formula tj2=t42-r4×p2.
9. The temperature control method for IGBT testing according to claim 8, wherein the step of adjusting the target power P2 when the difference between the theoretical temperature T41 of the NTC and the target temperature T42 of the NTC is out of an allowable range includes:
when the target temperature T42 of the NTC is greater than the theoretical temperature T41 of the NTC, the target power P2 of the heating device is reduced to the balance power P3, wherein the calculation formula of the balance power P3 is as follows:
P3--P2×[(T42-T41)-T41]
until the difference between the theoretical temperature T41 of the NTC and the target temperature T42 of the NTC is within an allowable range.
10. The temperature control method for IGBT testing according to claim 9, wherein the step of adjusting the target power P2 when the difference between the theoretical temperature T41 of the NTC and the target temperature T42 of the NTC is out of an allowable range further comprises:
when the target temperature T42 of the NTC is less than the theoretical temperature T41 of the NTC, the target power P2 of the heating device is increased.
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| CN117849570A (en) * | 2024-03-06 | 2024-04-09 | 深圳智芯微电子科技有限公司 | Method and system for determining testing temperature of power semiconductor device |
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| CN117849570A (en) * | 2024-03-06 | 2024-04-09 | 深圳智芯微电子科技有限公司 | Method and system for determining testing temperature of power semiconductor device |
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