CN116754559A - Surface defect detecting device for semiconductor device - Google Patents

Surface defect detecting device for semiconductor device Download PDF

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Publication number
CN116754559A
CN116754559A CN202310620461.8A CN202310620461A CN116754559A CN 116754559 A CN116754559 A CN 116754559A CN 202310620461 A CN202310620461 A CN 202310620461A CN 116754559 A CN116754559 A CN 116754559A
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China
Prior art keywords
light
semiconductor device
hole
emitting plate
plate
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CN202310620461.8A
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Chinese (zh)
Inventor
何伟恒
陈亮
沈洋
周培松
张文昊
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Haining Institute Of Integrated Circuits And Advanced Manufacturing
China Jiliang University
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Haining Institute Of Integrated Circuits And Advanced Manufacturing
China Jiliang University
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Application filed by Haining Institute Of Integrated Circuits And Advanced Manufacturing, China Jiliang University filed Critical Haining Institute Of Integrated Circuits And Advanced Manufacturing
Priority to CN202310620461.8A priority Critical patent/CN116754559A/en
Publication of CN116754559A publication Critical patent/CN116754559A/en
Pending legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01—Arrangements or apparatus for facilitating the optical investigation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01—Arrangements or apparatus for facilitating the optical investigation
    • G01N2021/0106—General arrangement of respective parts
    • G01N2021/0112—Apparatus in one mechanical, optical or electronic block
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G01N2021/8809—Adjustment for highlighting flaws
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95638—Inspecting patterns on the surface of objects for PCB's

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)

Abstract

The present application provides a surface defect detecting device of a semiconductor device, comprising: a base; the detection assembly is arranged on the base; the light source assembly is arranged on the base and positioned between the semiconductor device and the detection assembly, and comprises a first light-emitting plate arranged towards the semiconductor device, and a first through hole opposite to the semiconductor device is formed in the first light-emitting plate; the front projection of the spectroscope on the first light-emitting plate covers the first through hole, and the front projection of the second light-emitting plate on the first light-emitting plate is positioned outside the first through hole; the spectroscope is arranged opposite to the detection component. The surface defect detection device of the semiconductor device provided by the application has the advantages that the structure is simple, the operation is simple and convenient, the imaging quality of the surface image information of the semiconductor device can be effectively enhanced, the surface image information with higher definition can be obtained, and the defect detection accuracy can be further improved.

Description

Surface defect detecting device for semiconductor device
Technical Field
The application relates to the technical field of semiconductor device detection, in particular to a surface defect detection device of a semiconductor device.
Background
The semiconductor material is an electronic material, has conductivity between a semiconductor and an insulator at normal temperature, mainly comprises silicon, germanium, gallium arsenide, gallium phosphide, indium selenide, silicon nitride and the like, can be used for manufacturing semiconductor devices such as amplifiers, light emitters, rectifiers, filters and the like, and often has various defects on the surface of the semiconductor device, and the surface defects easily influence the performance and the reliability of the device, so that the surface defects of the semiconductor device need to be detected before the semiconductor device is put into use.
With the increase of user demands, integrated circuits are developing toward smaller sizes, and new generation chips require smaller sizes and higher device densities, wherein the sizes of semiconductor devices are further reduced, and miniaturized semiconductor devices are difficult to detect surface defects by using a manual visual inspection method, so that in order to eliminate interference and influence of various external factors, the accuracy and detection speed of detecting the semiconductor devices are improved, a great deal of labor cost required by manual visual inspection is reduced, surface image information of the semiconductor devices can be acquired by using a machine vision technology, and then the surface defects are identified by a defect identification algorithm and the like, but the surface image information acquired by the existing defect detection device is not clear, which leads to inaccurate subsequent defect identification and increases the calculation force of the identification algorithm, and therefore, a defect detection device capable of improving the acquisition definition of the surface image information is needed.
Disclosure of Invention
In view of the above, the present application provides a surface defect detecting device for a semiconductor device to solve the above-mentioned problems.
The application provides a surface defect detection device of a semiconductor device, comprising: a base; the detection assembly is arranged on the base and is used for collecting surface image information of the semiconductor device; the light source assembly is arranged on the base and positioned between the semiconductor device and the detection assembly, and comprises a first light-emitting plate which is arranged towards the semiconductor device, wherein a first through hole opposite to the semiconductor device is formed in the first light-emitting plate, and the first light-emitting plate is used for emitting first light to irradiate the semiconductor device so as to enhance the edge brightness of the semiconductor device; the front projection of the spectroscope on the first light-emitting plate covers the first through hole, the front projection of the second light-emitting plate on the first light-emitting plate is positioned outside the first through hole, the second light-emitting plate is used for emitting second light, the spectroscope is used for reflecting the second light, and the reflected second light passes through the first through hole and irradiates the semiconductor device so as to enhance the middle brightness of the semiconductor device; the spectroscope is arranged opposite to the detection assembly, so that the reflected light of the semiconductor device sequentially passes through the first through hole and the spectroscope to enter the detection assembly.
In some embodiments, the light source assembly further includes a third light emitting plate disposed toward the semiconductor device, the third light emitting plate being located between the second light emitting plate and the semiconductor device, the third light emitting plate being provided with a second through hole opposite to the semiconductor device, the second through hole being used for allowing the first light and the second light to pass through the third light emitting plate to be irradiated onto the semiconductor device, the third light emitting plate being used for emitting third light to be irradiated onto an outer periphery of the semiconductor device to enhance background brightness of the semiconductor device.
In some embodiments, the light source assembly further includes a housing, the first light emitting plate, the second light emitting plate, and the third light emitting plate are disposed in the housing, two opposite sidewalls of the housing are respectively provided with a third through hole, and the first through hole, the second through hole, and the third through hole are coaxially disposed.
In some embodiments, the area of the third via, the area of the second via, and the area of the first via are sequentially reduced, the area of the first via being greater than the area of the semiconductor device.
In some embodiments, the light source assembly is slidably coupled to the base, and/or the detection assembly is slidably coupled to the base.
In some embodiments, a sliding rail is arranged on the base, a first sliding block and a second sliding block are connected on the sliding rail in a sliding way, a first bottom plate is arranged on the first sliding block, a first supporting piece is arranged on the first bottom plate, and the first supporting piece is detachably connected with the light source assembly; the second sliding block is provided with a second bottom plate, a second supporting piece is arranged on the second bottom plate, and the second supporting piece is detachably connected with the detection assembly.
In some embodiments, the transmittance of the beam splitter is greater than the reflectance of the beam splitter.
In some embodiments, the beam splitter has a transmittance of 60% and a reflectance of 40%.
In some embodiments, a diffusion plate is disposed between the second light-emitting plate and the beam splitter, and an orthographic projection of the diffusion plate on the first light-emitting plate is located outside the first through hole, and the diffusion plate is used for homogenizing the second light.
In some embodiments, the semiconductor device is spaced from the light source assembly by a distance of 5mm to 10mm.
As can be seen from the foregoing, the present application provides a surface defect detecting apparatus for a semiconductor device, which is provided with a base for carrying a detecting assembly and a light source assembly; the detection component is arranged at the rear of the semiconductor device and is used for collecting surface image information of the semiconductor device; the light source component is arranged between the semiconductor device and the detection component and is used for polishing the semiconductor device; the light source assembly comprises a first light-emitting plate arranged towards the semiconductor device, a first through hole opposite to the semiconductor device is formed in the first light-emitting plate, the first light-emitting plate is used for emitting first light to irradiate the semiconductor device so as to enhance the edge brightness of the semiconductor device, and the first through hole can prevent the first light-emitting plate from shielding the semiconductor device when surface image information is acquired; the first light-emitting plate is provided with a second opposite light-emitting plate and a spectroscope at one side far away from the semiconductor device, the second light-emitting plate is used for emitting second light, the spectroscope is used for reflecting the second light and enabling the reflected second light to pass through the first through hole to irradiate the semiconductor device so as to enhance the middle brightness of the semiconductor device, and the first light-emitting plate is matched with balance light irradiated to the semiconductor device so as to enable acquired surface image information to be clearer and defect imaging on the image to be more obvious; the orthographic projection of the spectroscope on the first light-emitting plate covers the first through hole, so that the second light can be ensured to fill the first through hole and then irradiate the semiconductor device, and the brightness is ensured to be uniform; the orthographic projection of the second light-emitting plate on the first light-emitting plate is positioned outside the first through hole, so that the second light-emitting plate can be prevented from shielding the semiconductor device when the surface image information is acquired; the spectroscope has the functions of reflecting and transmitting light rays, and the spectroscope and the detection assembly are arranged oppositely, so that the reflected light of the semiconductor device can pass through the first through hole and then enter the detection assembly to be imaged through the spectroscope, and the acquisition of surface image information is realized; the surface defect detection device of the semiconductor device has the advantages of simple structure and simple and convenient operation, can effectively enhance the imaging quality of the surface image information of the semiconductor device, and obtain the surface image information with higher definition, thereby improving the accuracy of defect detection.
Drawings
In order to more clearly illustrate the technical solutions of the present application or related art, the drawings that are required to be used in the description of the embodiments or related art will be briefly described below, and it is apparent that the drawings in the following description are only embodiments of the present application, and other drawings may be obtained according to the drawings without inventive effort to those of ordinary skill in the art.
Fig. 1 is a schematic view showing an appearance of a surface defect detecting apparatus of a semiconductor device according to an embodiment of the present application;
fig. 2 is a front view of a surface defect detecting apparatus of a semiconductor device according to an embodiment of the present application;
FIG. 3 is a schematic cross-sectional view of a light source module according to an embodiment of the present application;
FIG. 4 is a schematic view of a surface image of a semiconductor device acquired using a first type of spectroscope;
FIG. 5 is a schematic view of a surface image of a semiconductor device acquired using a second type of spectroscope;
fig. 6 is a schematic view of a surface image of a semiconductor device acquired using a third type of spectroscope.
Reference numerals: 1. a base; 1-1, a sliding rail; 1-2, a first slide block; 1-3, a second sliding block; 1-4, a first bottom plate; 1-5, a first support; 1-6, a second bottom plate; 1-7, a second support; 1-8, a first locking structure; 1-9, a second locking structure; 2. a detection assembly; 2-1, lens; 2-2, a camera; 3. a light source assembly; 3-1, a first light-emitting plate; 3-2, a first through hole; 3-3, a second light-emitting plate; 3-4, spectroscope; 3-5, a diffusion plate; 3-6, a third light-emitting plate; 3-7, a second through hole; 3-8, a shell; 3-9, a third through hole; 4. a semiconductor device; 4-1, characters.
Detailed Description
The present application will be further described in detail below with reference to specific embodiments and with reference to the accompanying drawings, in order to make the objects, technical solutions and advantages of the present application more apparent.
It should be noted that unless otherwise defined, technical or scientific terms used in the embodiments of the present application should be given the ordinary meaning as understood by one of ordinary skill in the art to which the present application belongs. The terms "first," "second," and the like, as used in embodiments of the present application, do not denote any order, quantity, or importance, but rather are used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof, but does not exclude other elements or items. The terms "connected" or "connected," and the like, are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", etc. are used merely to indicate relative positional relationships, which may also be changed when the absolute position of the object to be described is changed.
The semiconductor material is an electronic material, has conductivity between a semiconductor and an insulator at normal temperature, mainly comprises silicon, germanium, gallium arsenide, gallium phosphide, indium selenide, silicon nitride and the like, can be used for manufacturing semiconductor devices such as amplifiers, light emitters, rectifiers, filters and the like, and often has various defects on the surface of the semiconductor device, and the surface defects easily influence the performance and the reliability of the device, so that the surface defects of the semiconductor device need to be detected before the semiconductor device is put into use.
With the increase of user demands, integrated circuits are developing toward smaller sizes, and new generation chips require smaller sizes and higher device densities, wherein the sizes of semiconductor devices are further reduced, and miniaturized semiconductor devices are difficult to detect surface defects by using a manual visual inspection method, so that in order to eliminate interference and influence of various external factors, the accuracy and detection speed of detecting the semiconductor devices are improved, a great deal of labor cost required by manual visual inspection is reduced, surface image information of the semiconductor devices can be acquired by using a machine vision technology, and then the surface defects are identified by a defect identification algorithm and the like, but the surface image information acquired by the existing defect detection device is not clear, which leads to inaccurate subsequent defect identification and increases the calculation force of the identification algorithm, and therefore, a defect detection device capable of improving the acquisition definition of the surface image information is needed.
In the process of realizing the application, the defect of a semiconductor device with small packaging size is found to be tiny, so that the selection of a light source is critical to the detection device, the existing detection device adopts a single light source to shine, for example, an annular LED (light-emitting diode) lamp panel is adopted to shine the semiconductor device in front, then a camera is arranged behind the annular lamp panel, the reflected light of the semiconductor device enters a camera to image through an annular hole of the lamp panel, and further surface image information is obtained, but because the light rays irradiated onto the semiconductor device are not uniform, for example, the luminous flux irradiated onto the edge of the semiconductor device is larger than the luminous flux irradiated onto the middle part of the semiconductor, the obtained surface image information is unclear and the defect cannot be accurately identified, and the light rays irradiated onto all areas of the semiconductor device can be balanced by considering the use of a combined light source so as to improve the quality of the collected surface image information.
The following describes the technical solution of the present application in detail by specific embodiments in conjunction with fig. 1 to 6.
In some embodiments of the present application, there is provided a surface defect detecting apparatus of a semiconductor device 4, as shown in fig. 1 to 3, including: a base 1; a detection assembly 2 mounted on the base 1 for collecting surface image information of the semiconductor device 4; a light source assembly 3 mounted on the base 1 and located between the semiconductor device 4 and the detection assembly 2, and including a first light emitting plate 3-1 disposed towards the semiconductor device 4, wherein a first through hole 3-2 opposite to the semiconductor device 4 is disposed on the first light emitting plate 3-1, and the first light emitting plate 3-1 is used for emitting a first light to irradiate onto the semiconductor device 4 so as to enhance the edge brightness of the semiconductor device 4; the side, far away from the semiconductor device 4, of the first light-emitting plate 3-1 is provided with a second opposite light-emitting plate 3-3 and a spectroscope 3-4, the orthographic projection of the spectroscope 3-4 on the first light-emitting plate 3-1 covers the first through hole 3-2, the orthographic projection of the second light-emitting plate 3-3 on the first light-emitting plate 3-1 is positioned outside the first through hole 3-2, the second light-emitting plate 3-3 is used for emitting second light, the spectroscope 3-4 is used for reflecting the second light, and the reflected second light irradiates the semiconductor device 4 through the first through hole 3-2 so as to enhance the middle brightness of the semiconductor device 4; the beam splitter 3-4 is disposed opposite to the detection component 2, so that the reflected light of the semiconductor device 4 sequentially passes through the first through hole 3-2 and the beam splitter 3-4 and enters the detection component 2.
The base 1 is, for example, a steel plate, and is not particularly limited, and is configured to carry the detection assembly 2 and the light source assembly 3 by providing the base 1.
The detecting assembly 2 includes, for example, a camera 2-2 and a lens 2-1, and is not particularly limited, and as shown in fig. 1 and 2, the detecting assembly 2 is disposed behind the semiconductor device 4 for collecting surface image information of the semiconductor device 4.
As shown in fig. 1 and 2, the light source module 3 is disposed between the semiconductor device 4 and the detection module 2 for polishing the semiconductor device 4.
As shown in fig. 3, the light source assembly 3 includes a first light emitting plate 3-1 disposed towards the semiconductor device 4, where the first light emitting plate 3-1 is, for example, a ring-shaped LED lamp panel, and is not limited in particular, and the first light emitting plate 3-1 is configured to emit a first light L1 to irradiate onto the semiconductor device 4, so as to enhance the edge brightness of the semiconductor device 4, and further make the defect feature in the surface image information more obvious; the first through hole 3-2 opposite to the semiconductor device 4 is arranged on the first light emitting plate 3-1, the first through hole 3-2 is, for example, a rectangular through hole or a circular through hole, and is not limited in particular, and can be matched with the shape of the semiconductor device 4, and the first through hole 3-2 can avoid the first light emitting plate 3-1 shielding the semiconductor device 4 when the surface image information is acquired.
As shown in fig. 3, a second light-emitting plate 3-3 and a spectroscope 3-4 are disposed on a side of the first light-emitting plate 3-1 far away from the semiconductor device 4, where the second light-emitting plate 3-3 is, for example, a rectangular LED lamp panel, and is not limited in particular, the second light-emitting plate 3-3 and the spectroscope 3-4 are disposed opposite to each other, the second light-emitting plate 3-3 is configured to emit a second light L2, and the spectroscope 3-4 is configured to reflect the second light, and make the reflected second light irradiate onto the semiconductor device 4 through the first through hole 3-2, so as to enhance the middle brightness of the semiconductor device 4, and balance the light irradiated onto the semiconductor device 4 in cooperation with the first light-emitting plate 3-1, so that the collected surface image information is clearer, and the defect image on the image is more obvious.
The orthographic projection of the spectroscope 3-4 on the first luminescent plate 3-1 covers the first through hole 3-2, ensure that the second light can fill the first through hole 3-2 and then irradiate on the semiconductor device 4, so that the brightness is more uniform; the orthographic projection of the second light-emitting plate 3-3 on the first light-emitting plate 3-1 is located outside the first through hole 3-2, so that the second light-emitting plate 3-3 can be prevented from shielding the semiconductor device 4 when the surface image information is acquired.
The spectroscope 3-4 has the functions of reflecting light and transmitting light, and the spectroscope 3-4 is arranged opposite to the detection component 2, so that the reflected light of the semiconductor device 4 can pass through the first through hole 3-2 and then enter the detection component 2 to image through the spectroscope 3-4, and the acquisition of surface image information is realized.
The surface defect detection device of the semiconductor device 4 has the advantages of simple structure and simple and convenient operation, can effectively enhance the imaging quality of the semiconductor device 4, obtain surface image information with higher definition, lighten the calculation force of an algorithm and improve the identification accuracy and the detection speed.
The surface defect detection device replaces human eyes to detect, the problem of visual fatigue caused by overlong visual inspection time is avoided, so that the testing process is not interfered by artificial factors, the interference of external environment factors is small when the surface defect detection of materials is performed, the detection speed is high, the identification accuracy is high, the labor cost can be saved, and the production efficiency is improved.
In some embodiments, as shown in fig. 3, the second light-emitting plate 3-3 is perpendicular to the first light-emitting plate 3-1, so that the second light-emitting plate 3-1 is conveniently fixed, and the included angle between the beam splitter 3-4 and the first light-emitting plate 3-1 is 45 °, so that the reflected second light can be perpendicular to the first light-emitting plate 3-1, and the direction of the second light is the same as that of the first light, so that the semiconductor device 4 can be uniformly irradiated.
In some embodiments, as shown in fig. 3, the light source assembly 3 further includes a third light emitting plate 3-6 disposed toward the semiconductor device 4, the third light emitting plate 3-6 is located between the second light emitting plate 3-3 and the semiconductor device 4, a second through hole 3-7 opposite to the semiconductor device 4 is provided on the third light emitting plate 3-6, the second through hole 3-7 is used for allowing the first light and the second light to irradiate onto the semiconductor device 4 through the third light emitting plate 3-6, and the third light emitting plate 3-6 is used for emitting a third light to irradiate to the periphery of the semiconductor device 4 so as to enhance the background brightness of the semiconductor device 4.
The third light emitting plate 3-6 is, for example, an annular LED lamp plate, and is not limited specifically, as shown in fig. 3, the third light emitting plate 3-6 is disposed towards the semiconductor device 4 and located between the second light emitting plate 3-3 and the semiconductor device 4, and the third light emitting plate 3-6 is used for emitting third light L3 and irradiating the periphery of the semiconductor device 4 to enhance the background brightness of the semiconductor device 4, and the difference between the semiconductor device 4 and the background is amplified to obtain surface image information with higher contrast ratio in cooperation with the first light emitting plate 3-1 and the second light emitting plate 3-3.
The third light emitting panel 3-6 is provided with a second through hole 3-7 opposite to the semiconductor device 4, and the second through hole 3-7 is, for example, a rectangular through hole or a circular through hole, but not limited to, and may be matched with the shape of the semiconductor device 4, and the second through hole 3-7 is used for allowing the first light and the second light to pass through the third light emitting panel 3-6 and irradiate the semiconductor device 4.
In some embodiments, as shown in fig. 3, the light source assembly 3 further includes a housing 3-8, the first light emitting plate 3-1, the second light emitting plate 3-3 and the third light emitting plate 3-6 are disposed in the housing 3-8, two opposite sidewalls of the housing 3-8 are respectively provided with a third through hole 3-9, and the first through hole 3-2, the second through hole 3-7 and the third through hole 3-9 are coaxially disposed.
The shell 3-8 is arranged for protecting the first light-emitting plate 3-1, the second light-emitting plate 3-3 and the third light-emitting plate 3-6, two side walls of the shell 3-8 opposite to each other along the illumination direction are respectively provided with a third through hole 3-9, the third through holes 3-9 are rectangular through holes or circular through holes, the shape of the semiconductor device 4 can be matched with the shape of the semiconductor device without limitation, and the third through holes 3-9 are arranged for facilitating illumination and surface image information acquisition; the first through hole 3-2, the second through hole 3-7 and the third through hole 3-9 are arranged coaxially, so that uniform irradiation of light is ensured.
In some embodiments, the shell 3-8 is provided with radiating fins, so that heat dissipation is facilitated.
In some embodiments, the area of the third via hole 3-9, the area of the second via hole 3-7, and the area of the first via hole 3-2 decrease in order, and the area of the first via hole 3-2 is larger than the area of the semiconductor device 4.
The area of the semiconductor device 4 is, for example, 1mm 2 To 4mm 2 The area of the first via hole 3-2 is, for example, 1.1 times to 1.2 times the area of the semiconductor device 4The area of the second through hole 3-7 is, for example, 1.1 times to 1.5 times that of the first through hole 3-2, and the area of the third through hole 3-9 is, for example, 1.1 times to 2 times that of the second through hole 3-7, and the method is not particularly limited; the area of the first through hole 3-2 is set to be larger than that of the semiconductor device 4, so that the detection assembly 2 can collect the surface image information of the complete semiconductor device 4; the area of the third through hole 3-9, the area of the second through hole 3-7 and the area of the first through hole 3-2 are sequentially reduced, so that the illumination area gradually increases from the spectroscope 3-4 to the third light-emitting plate 3-6, and light rays gradually diverge along with the increase of the propagation distance, so that the light rays can uniformly irradiate the semiconductor device 4, the waste of light sources is reduced, and a foundation can be provided for polishing by using a certain light-emitting plate independently.
In some embodiments, the light emitting area of the second light emitting plate 3-3 is, for example, 1.2 times to 2 times that of the semiconductor device 4, the annular light emitting area of the second light emitting plate 3-3 is, for example, 1.5 times to 3 times that of the semiconductor device 4, and the annular light emitting area of the third light emitting plate 3-6 is, for example, 2 times to 4 times that of the semiconductor device 4, so as to ensure that light can be irradiated to the complete semiconductor device 4 and a part of the background area.
In some embodiments, as shown in fig. 2, the semiconductor device 4, the light source assembly 3 and the lens 2-1 of the detection assembly 2 are coaxially arranged, so that the semiconductor device 4 is located at the center of the field of view of the lens 2-1, and surface image information is clearer and more accurate.
In some embodiments, as shown in fig. 1 and 2, the light source assembly 3 is slidably connected to the base 1, and/or the detection assembly 2 is slidably connected to the base 1.
The light source assembly 3 and the detection assembly 2 are both in sliding connection with the base 1, and the axial positions of the light source assembly 3 and the detection assembly 2 can be adjusted, for example, the distance between the light source assembly 3 and the semiconductor device 4 is adjusted, the lighting effect is ensured, and the distance between the detection assembly 2 and the light source assembly 3 is adjusted so as to enable imaging to be clear.
In some embodiments, as shown in fig. 1 and 2, a sliding rail 1-1 is provided on the base 1, a first sliding block 1-2 and a second sliding block 1-3 are slidably connected on the sliding rail 1-1, a first bottom plate 1-4 is provided on the first sliding block 1-2, a first supporting member 1-5 is provided on the first bottom plate 1-4, and the first supporting member 1-5 is detachably connected with the light source assembly 3; the second sliding block 1-3 is provided with a second bottom plate 1-6, the second bottom plate 1-6 is provided with a second supporting piece 1-7, and the second supporting piece 1-7 is detachably connected with the detection assembly 2.
The first sliding block 1-2 can be connected with the first bottom plate 1-4 through bolts, the first bottom plate 1-4 is used for bearing the light source assembly 3, the first supporting piece 1-5 is a telescopic rod, for example, can be connected with the first bottom plate 1-4 through bolts, and the first supporting piece 1-5 can be connected with the light source assembly 3 through bolts so as to adjust the height of the light source assembly 3 and ensure that the imaging of the semiconductor device 4 is not blocked; a first locking structure 1-8 is connected between the first bottom plate 1-4 and the base 1, the first locking structure 1-8 is a connecting plate, for example, one end of the connecting plate is connected with the first bottom plate 1-4 through bolts, the other end of the connecting plate is connected with the base 1 through bolts, and when the first locking structure 1-8 is locked, the relative position of the first bottom plate 1-4 and the base 1 can be fixed, and then the position of the light source assembly 3 is fixed; when the first locking structures 1-8 are unlocked, the light source module 3 can be slid.
The second sliding block 1-3 can be connected with the second bottom plate 1-6 through bolts, the second bottom plate 1-6 is used for bearing the light source component 3, the second supporting piece 1-7 is, for example, a telescopic clamp, can be connected with the second bottom plate 1-6 through bolts, and the second supporting piece 1-7 can be connected with the detecting component 2 through bolts so as to adjust the height of the detecting component 2, and ensure that the detecting component 2 can acquire surface image information of the semiconductor device 4; the second locking structure 1-9 is connected between the second bottom plate 1-6 and the base 1, the second locking structure 1-9 is a connecting plate, for example, one end of the connecting plate is connected with the second bottom plate 1-6 through bolts, the other end of the connecting plate is connected with the base 1 through bolts, and when the second locking structure 1-9 is locked, the relative position of the second bottom plate 1-6 and the base 1 can be fixed, and then the position of the detection assembly 2 is fixed; when the second locking structure 1-9 is unlocked, the detection assembly 2 can be slid.
In some embodiments, the transmittance of the beam splitter 3-4 is greater than the reflectance of the beam splitter 3-4.
The light transmittance of the spectroscope 3-4 is set to be larger than the reflectivity, so that the reflected light of the semiconductor device 4 can enter the detection device to image through the spectroscope 3-4 more, and the definition of surface image information is improved.
In some embodiments, the beam splitters 3-4 have a transmittance of 60% and a reflectance of 40% to obtain the best quality surface image information.
As shown in fig. 4 to 6, in order to acquire surface image information of the same semiconductor device 4 using three surface defect detecting devices, an image is subjected to a color reversal process for the convenience of observation; wherein, the transmittance of the spectroscope 3-4 in the surface defect detection device of FIG. 5 is 60%, the reflectivity is 40%, the obtained image has the best contrast and the defect is clear; the spectroscope 3-4 in the surface defect detecting device of fig. 4 has a transmittance of 70% and a reflectance of 30%, and it can be seen from the fact that the noise of the character 4-1 on the semiconductor device 4 of fig. 4 is large, and the image quality is low, as compared with fig. 5; the spectroscope 3-4 in the surface defect detecting device of fig. 6 has a transmittance of 50% and a reflectance of 50%, and it can be seen from fig. 5 that the characteristics of the semiconductor device 4 shown in fig. 6 are partially missing, and the image quality is low, which means that too high or too low transmittance affects the imaging effect.
In some embodiments, as shown in fig. 3, a diffusion plate 3-5 is disposed between the second light-emitting plate 3-3 and the beam splitter 3-4, the orthographic projection of the diffusion plate 3-5 on the first light-emitting plate 3-1 is located outside the first through hole 3-2, and the diffusion plate 3-5 is used for homogenizing the second light.
A diffusion plate 3-5 is arranged between the second light-emitting plate 3-3 and the spectroscope 3-4, and the diffusion plate 3-5 is used for uniformly distributing second light, so that the light irradiated on the semiconductor device 4 is more uniform, and the quality of the acquired image is improved; the orthographic projection of the diffusion plate 3-5 on the first light emitting plate 3-1 is located outside the first through hole 3-2 to avoid the diffusion plate 3-5 from shielding the semiconductor device 4 when collecting surface image information.
In some embodiments, as shown in fig. 1 to 3, the distance between the semiconductor device 4 and the light source assembly 3 is 5mm to 10mm.
The distance between the semiconductor device 4 and the light source assembly 3 is, for example, 5mm, 6mm, 7mm, 8mm, 9mm or 10mm, and is not particularly limited, so that the noise of the surface image information can be increased due to the fact that the distance is too short, and meanwhile, the phenomenon that the distance is too far, the light is scattered and the irradiated light is uneven can be avoided.
The using method of the surface defect detection device of the semiconductor device 4 comprises the steps of placing the semiconductor device 4 at the front center position of the light source assembly 3, determining the optimal lighting position through the sliding light source assembly 3, determining the optimal collecting position through the sliding detection assembly 2, enabling imaging to be clear, fixing the first locking structure 1-8 and the second locking structure 1-9, opening the first light emitting plate 3-1 and the second light emitting plate 3-3, collecting surface image information, sending the surface image information to an upper computer software for automatic detection, and feeding back background processing in time if defects exist on the surface, so that a great amount of time cost and labor cost are saved, and image imaging quality and detection accuracy are improved.
In some embodiments, the method of use further comprises turning on the third light emitting panel 3-6, turning off the first light emitting panel 3-1 and the second light emitting panel 3-3, and performing character image acquisition of the semiconductor device 4.
In some embodiments, the method of use further comprises turning on the third light-emitting panel 3-6, the first light-emitting panel 3-1, and the second light-emitting panel 3-3 for surface image information acquisition of the semiconductor device 4.
The description of the present application has been presented for purposes of illustration and description, and is not intended to be exhaustive or limited to the application in the form disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art. The embodiments were chosen and described in order to best explain the principles of the application and the practical application, and to enable others of ordinary skill in the art to understand the application for various embodiments with various modifications as are suited to the particular use contemplated.
Those of ordinary skill in the art will appreciate that: the discussion of any of the embodiments above is merely exemplary and is not intended to suggest that the scope of the application (including the claims) is limited to these examples; combinations of features of the above embodiments or in different embodiments are also possible within the idea of the application, and there are many other variations of the different aspects of the embodiments of the application as described above, which are not provided in detail for the sake of brevity.

Claims (10)

1. A surface defect detecting apparatus of a semiconductor device, comprising:
a base;
the detection assembly is arranged on the base and is used for collecting surface image information of the semiconductor device;
the light source assembly is arranged on the base and positioned between the semiconductor device and the detection assembly, and comprises a first light-emitting plate which is arranged towards the semiconductor device, wherein a first through hole opposite to the semiconductor device is formed in the first light-emitting plate, and the first light-emitting plate is used for emitting first light to irradiate the semiconductor device so as to enhance the edge brightness of the semiconductor device; the front projection of the spectroscope on the first light-emitting plate covers the first through hole, the front projection of the second light-emitting plate on the first light-emitting plate is positioned outside the first through hole, the second light-emitting plate is used for emitting second light, the spectroscope is used for reflecting the second light, and the reflected second light passes through the first through hole and irradiates the semiconductor device so as to enhance the middle brightness of the semiconductor device; the spectroscope is arranged opposite to the detection assembly, so that the reflected light of the semiconductor device sequentially passes through the first through hole and the spectroscope to enter the detection assembly.
2. The surface defect detecting apparatus of a semiconductor device according to claim 1, wherein the light source assembly further comprises a third light emitting plate provided toward the semiconductor device, the third light emitting plate being located between the second light emitting plate and the semiconductor device, the third light emitting plate being provided with a second through hole opposite to the semiconductor device, the second through hole being for allowing the first light and the second light to be irradiated onto the semiconductor device through the third light emitting plate, the third light emitting plate being for emitting a third light to be irradiated onto an outer periphery of the semiconductor device to enhance a background luminance of the semiconductor device.
3. The surface defect detecting apparatus of a semiconductor device according to claim 2, wherein the light source assembly further comprises a housing, the first light-emitting panel, the second light-emitting panel, and the third light-emitting panel are disposed in the housing, and two opposite side walls of the housing are respectively provided with a third through hole, and the first through hole, the second through hole, and the third through hole are coaxially disposed.
4. The surface defect detecting apparatus of claim 3, wherein an area of the third via, an area of the second via, and an area of the first via are sequentially reduced, the area of the first via being larger than the area of the semiconductor device.
5. The surface defect inspection apparatus of a semiconductor device according to claim 1, wherein the light source assembly is slidably connected to the base, and/or the inspection assembly is slidably connected to the base.
6. The surface defect detection device of claim 5, wherein a slide rail is provided on the base, a first slider and a second slider are slidably connected on the slide rail, a first bottom plate is provided on the first slider, a first supporting member is provided on the first bottom plate, and the first supporting member is detachably connected with the light source assembly; the second sliding block is provided with a second bottom plate, a second supporting piece is arranged on the second bottom plate, and the second supporting piece is detachably connected with the detection assembly.
7. The apparatus according to claim 1, wherein a transmittance of the spectroscope is greater than a reflectance of the spectroscope.
8. The apparatus according to claim 7, wherein the spectroscope has a transmittance of 60% and a reflectance of 40%.
9. The apparatus according to claim 1, wherein a diffusion plate is disposed between the second light-emitting plate and the beam splitter, an orthographic projection of the diffusion plate on the first light-emitting plate is located outside the first through hole, and the diffusion plate is used for homogenizing the second light.
10. The surface defect detecting apparatus of a semiconductor device according to claim 1, wherein a distance of the semiconductor device from the light source assembly is 5mm to 10mm.
CN202310620461.8A 2023-05-29 2023-05-29 Surface defect detecting device for semiconductor device Pending CN116754559A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310620461.8A CN116754559A (en) 2023-05-29 2023-05-29 Surface defect detecting device for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310620461.8A CN116754559A (en) 2023-05-29 2023-05-29 Surface defect detecting device for semiconductor device

Publications (1)

Publication Number Publication Date
CN116754559A true CN116754559A (en) 2023-09-15

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CN202310620461.8A Pending CN116754559A (en) 2023-05-29 2023-05-29 Surface defect detecting device for semiconductor device

Country Status (1)

Country Link
CN (1) CN116754559A (en)

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