CN116742462A - Saturable absorber based on tantalum nitride quantum dots, preparation method and mode-locked fiber laser - Google Patents
Saturable absorber based on tantalum nitride quantum dots, preparation method and mode-locked fiber laser Download PDFInfo
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- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical class [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 title claims abstract description 112
- 239000006096 absorbing agent Substances 0.000 title claims abstract description 67
- 239000000835 fiber Substances 0.000 title claims abstract description 49
- 238000002360 preparation method Methods 0.000 title abstract description 19
- 230000003287 optical effect Effects 0.000 claims abstract description 18
- 239000002096 quantum dot Substances 0.000 claims description 47
- 239000013307 optical fiber Substances 0.000 claims description 34
- 230000010287 polarization Effects 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 8
- 239000003960 organic solvent Substances 0.000 claims description 7
- 238000005086 pumping Methods 0.000 claims description 6
- 230000009471 action Effects 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 2
- 238000009210 therapy by ultrasound Methods 0.000 claims description 2
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- 239000000463 material Substances 0.000 abstract description 25
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 229920006395 saturated elastomer Polymers 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 13
- 230000008021 deposition Effects 0.000 description 11
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- 238000001228 spectrum Methods 0.000 description 8
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- 238000002441 X-ray diffraction Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000001000 micrograph Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000001237 Raman spectrum Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
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- 229910021389 graphene Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1106—Mode locking
- H01S3/1112—Passive mode locking
- H01S3/1115—Passive mode locking using intracavity saturable absorbers
- H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
- H01S3/06791—Fibre ring lasers
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Abstract
The application belongs to the field of saturable absorbers, and particularly relates to a saturable absorber based on tantalum nitride quantum dots, a preparation method and a mode-locked fiber laser; the tantalum nitride quantum dots in the saturable absorber based on the tantalum nitride quantum dots provided by the application are used as topology semi-metals, the optical performance and the saturation strength are excellent, when laser passes through the tantalum nitride quantum dots on the saturable absorber, the laser can reach a saturated state quickly, ultra-fast laser with repetition frequency can be output, and a laser mode locking signal is stable; thereby solving the technical problem of lower performance of the saturable absorber based on the two-dimensional material in the prior art.
Description
Technical Field
The application belongs to the field of saturable absorbers, and particularly relates to a saturable absorber based on tantalum nitride quantum dots, a preparation method thereof and a mode-locked fiber laser.
Background
The saturable absorber is one of key devices for generating laser pulses, and the current saturable absorber comprises an artificial saturable absorber such as a nonlinear annular mirror, nonlinear polarization evolution and the like, and a non-artificial 'real' saturable absorber such as a semiconductor saturable absorber mirror, a low-dimensional material and the like.
The preparation difficulty and cost of the semiconductor saturable absorber mirror in the saturable absorber limit the wide application of the semiconductor saturable absorber mirror in the field of fiber lasers, and the low-dimensional material is widely applied to the fiber lasers due to the photoelectric characteristics of the low-dimensional material; however, the existing two-dimensional material of the saturable absorber has the defects of low performance, such as low graphene light absorption coefficient and modulation depth, low stability of black phosphorus at normal temperature, unfavorable internal photon transition caused by indirect band gap of transition metal sulfide, and low performance of the saturable absorber based on the two-dimensional material of graphene.
Disclosure of Invention
In view of the above, the application provides a saturable absorber based on tantalum nitride quantum dots, a preparation method thereof and a mode-locked fiber laser, which are used for solving the technical problem that the performance of the saturable absorber based on two-dimensional materials in the prior art is lower.
The application provides a saturable absorber based on tantalum nitride quantum dots, which comprises the tantalum nitride quantum dots and tapered optical fibers;
the tapered optical fiber supports the tantalum nitride quantum dots.
Preferably, the particle size of the tantalum nitride quantum dot is 1-5 nm.
The second aspect of the application provides a method for preparing a saturable absorber based on tantalum nitride quantum dots, comprising the steps of: and (3) dripping the tantalum nitride quantum dot solution on the tapered optical fiber, and depositing to obtain the saturable absorber based on the tantalum nitride quantum dots.
Preferably, the step of dripping the tantalum nitride quantum dot solution on the tapered optical fiber, and the step of obtaining the saturable absorber based on the tantalum nitride quantum dot after deposition specifically comprises the following steps:
s1, placing a conical optical fiber in a constant-temperature heating table for preheating to obtain a preheated conical optical fiber;
and S2, dripping the tantalum nitride quantum dot solution in a conical region of the conical optical fiber, introducing 1550nm continuous wave laser at the other end of the conical optical fiber, and surrounding the conical region of the conical optical fiber by the tantalum nitride quantum dot under the action of the optical gradient force of an evanescent field to obtain a saturable absorber based on the tantalum nitride quantum dot.
In order to ensure the deposition effect, the dispersion liquid which is far more than the dispersion liquid meeting the cone deposition requirement should be dripped, the optical power is monitored to be reduced along with the continuous deposition process from the power meter, the excessive dripping of the dispersion liquid is waited for a short time, the optical power is basically kept unchanged, the fact that the tapered optical fiber has deposited enough tantalum nitride quantum dot material is not suitable for dripping the dispersion liquid, and therefore the dripping operation needs to be carried out by adjusting the proper volume of the dispersion liquid between 0.2 ml and 2ml according to the concentration of the quantum dot in the dispersion liquid.
Preferably, in step S1, the heating temperature of the constant temperature heating table is 60 ℃.
Preferably, in step S2, the power of the continuous wave laser is 10 to 30mW.
It should be noted that, setting the heating temperature of the constant temperature heating table is favorable for volatilizing the solvent, the incident light power can have a certain influence on the final deposition effect in the process of tapering optical fiber deposition, and when the input power is below 10mW, the output power is basically unchanged, so that the deposition is not performed; the larger the light deposition power is, the more the material deposition amount is, and the larger the modulation depth of the saturable absorber is; when the incident light power exceeds about 30mW, the material deposition is excessive and exceeds the tapered optical fiber bearing threshold value possibly due to the excessive power, the light transmittance is extremely reduced, and the emergent light power is suddenly reduced to be in nanowatts. Therefore, the deposition operation needs to be carried out by adjusting the proper continuous wave laser power between 10mW and 30mW according to the concentration of the tantalum nitride quantum dots.
Preferably, the preparation method of the tantalum nitride quantum dot comprises the following steps:
step S12, mixing the tantalum nitride with an organic solvent, performing ultrasonic treatment, and standing to obtain an organic solution of the tantalum nitride;
and S22, mixing an upper layer solution of the organic solution of tantalum nitride with the organic solvent, centrifuging, and discarding the upper layer solution to obtain the tantalum nitride quantum dot.
Preferably, in step S12, the mass-volume ratio of the tantalum nitride to the organic solvent is 1-10 g: 10-100 mL.
Preferably, in step S12 and step S22, the organic solvent is selected from ethanol.
Preferably, in step S12, the power of the ultrasound is 300-500W, and the time is 4-8 h.
Preferably, in step S12, the standing time is 6 to 18 hours.
Preferably, in step S22, the rotational speed of the centrifugation is 8000-12000 rpm, and the time is 1-20 min.
The application provides a mode-locked fiber laser, which comprises a laser pumping source, a wavelength division multiplexer, an erbium-doped gain fiber, a polarization independent isolator, a polarization controller, an output coupler, a saturable absorber based on tantalum nitride quantum dots and a single-mode fiber;
the wavelength division multiplexer comprises a first input end and a second input end;
the laser pumping source, the first input end of the wavelength division multiplexer, the erbium-doped gain fiber, the polarization independent isolator, the polarization controller, the output coupler, the saturable absorber based on the tantalum nitride quantum dots, the single-mode fiber and the second input end of the wavelength division multiplexer are sequentially connected to form the annular laser resonant cavity.
In summary, the application provides a saturable absorber based on tantalum nitride quantum dots, a preparation method and a mode-locked fiber laser, wherein the saturable absorber is prepared by dropwise adding a tantalum nitride quantum dot solution prepared by liquid phase stripping onto a tapered fiber, the tantalum nitride quantum dots in the saturable absorber are used as topology semi-metals, body energy bands with topology characteristics are crossed near a fermi surface to form a material of a zero-gap electronic state, and the material is a saturable absorber material with excellent optical performance and saturation intensity, when laser passes through the tantalum nitride quantum dots on the saturable absorber, the laser can reach a saturation state more quickly, ultrafast laser with repetition frequency can be output, and a laser mode-locked signal is stable; thereby solving the technical problem of lower performance of the saturable absorber based on the two-dimensional material in the prior art.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present application, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is an atomic structure diagram of a tantalum nitride quantum dot prepared by the preparation method of example 2 of the present application;
FIG. 2 is an X-ray diffraction chart of a tantalum nitride quantum dot prepared by the preparation method of example 2 of the present application;
FIG. 3 is a Raman spectrum of a tantalum nitride quantum dot prepared by the preparation method of example 2 of the present application;
FIG. 4 is a transmission electron microscope image of the tantalum nitride quantum dots prepared by the preparation method of example 2 of the present application;
FIG. 5 is an atomic force microscope image of a tantalum nitride quantum dot prepared by the method of example 2 of the present application;
FIG. 6 is a height view of quantum dots in the atomic force microscope image of FIG. 5;
FIG. 7 is a graph showing the optical characteristics of the tantalum nitride quantum dots prepared by the method of example 2 of the present application;
FIG. 8 is a schematic diagram of a mode-locked fiber laser according to embodiment 3 of the present application;
FIG. 9 is a pulse sequence diagram of a mode-locked fiber laser according to embodiment 3 of the present application;
FIG. 10 is a broadband spectrum diagram of a mode-locked fiber laser according to embodiment 3 of the present application;
FIG. 11 is a fundamental frequency diagram of a mode-locked fiber laser according to embodiment 3 of the present application;
FIG. 12 is a spectrum of a mode-locked fiber laser according to embodiment 3 of the present application;
FIG. 13 is a graph showing the spectrum of the mode-locked fiber laser according to example 3 of the present application over time;
FIG. 14 is a graph showing the relationship between the output power of the optical path and the pump power of the mode-locked fiber laser according to embodiment 3 of the present application;
FIG. 15 is a pulse width diagram of a single pulse of the mode-locked fiber laser according to example 3 of the present application;
FIG. 4a is a transmission electron microscope image of a tantalum nitride quantum dot, and FIG. 4b is a high resolution transmission electron microscope image of a tantalum nitride quantum dot;
fig. 6a is a height diagram of four groups of tantalum nitride quantum dots in the atomic force microscope image shown in fig. 5, and fig. 6b is a statistical diagram of height distribution of four groups of tantalum nitride quantum dots in the atomic force microscope image shown in fig. 5;
fig. 7a is a schematic diagram of a dual-arm balanced detector for testing the optical characteristics of the tantalum nitride quantum dots, and fig. 7b is a saturable absorption curve of the tantalum nitride quantum dots tested by the dual-arm balanced detector.
Detailed Description
The application provides a saturable absorber based on tantalum nitride quantum dots, a preparation method thereof and a mode-locked fiber laser, which are used for solving the technical problem that the performance of the saturable absorber based on two-dimensional materials in the prior art is lower.
The following description of the embodiments of the present application will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the application are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
Example 1
In view of the defect of low performance of the existing two-dimensional material saturable absorber, the embodiment 1 of the application provides a saturable absorber based on tantalum nitride quantum dots, which comprises a tapered optical fiber and tantalum nitride quantum dots loaded by the tapered optical fiber; the tantalum nitride quantum dots are used as topology semi-metals, bulk energy bands with topology characteristics are crossed near the Fermi surface to form a material of a zero-energy-gap electronic state, and the material is a saturable absorber material with excellent optical performance and saturation strength.
For the tapered optical fiber, the tapered optical fiber is obtained by adopting a tapered mode commonly used in the field, during tapered, the part of the single-mode optical fiber, which needs to be tapered, is firstly subjected to outer film stripping, and then is placed on a tapered machine of a forward melting tapered system for tapered preparation.
Example 2
Embodiment 2 of the present application provides a method for preparing a saturable absorber based on tantalum nitride quantum dots according to embodiment 1, wherein the preparation method comprises the steps of preparing the tantalum nitride quantum dots and preparing the saturable absorber based on the tantalum nitride quantum dots.
The preparation method of the tantalum nitride quantum dot comprises the following steps of: firstly, 5g of tantalum nitride powder is placed in 50ml of ethanol solvent, then the ethanol solvent containing tantalum nitride is placed in an ultrasonic machine for a period of time, and then the tantalum nitride powder is taken out and placed still; wherein the power of the ultrasonic machine is 400W, the ultrasonic time is 6 hours, and the standing time is 12 hours;
after standing, mixing 15ml of the upper layer liquid after standing with 15ml of ethanol solvent, centrifuging at 10,000rpm for 15min, and removing the centrifuged upper layer liquid to obtain tantalum nitride quantum dot solution; the atomic structure of the tantalum nitride quantum dot is shown in fig. 1, the X-ray diffraction of the tantalum nitride quantum dot is shown in fig. 2, the Raman spectrum of the tantalum nitride quantum dot is shown in fig. 3, the morphology of the tantalum nitride quantum dot is shown in fig. 4-5, and the height dimension of the tantalum nitride quantum dot is shown in fig. 6.
The preparation method of the saturable absorber based on the tantalum nitride quantum dots comprises the following steps: 2mL of tantalum nitride quantum dot solution is dripped on the tapered optical fiber, and a saturable absorber based on the tantalum nitride quantum dot is obtained after deposition; the preparation method comprises the steps of dripping a tantalum nitride quantum dot solution on a tapered optical fiber, introducing 1550nm continuous wave laser to one side of the tapered optical fiber, surrounding a tapered optical fiber cone region by the tantalum nitride quantum dot under the action of optical gradient force of an evanescent field, depositing the tantalum nitride quantum dot on the tapered optical fiber after the dispersion liquid is completely dried, and preparing a saturated absorber based on the tantalum nitride quantum dot.
Example 3
The embodiment 3 of the application provides a mode-locked fiber laser, the structure of which is shown in figure 8, and the mode-locked fiber laser comprises a laser pumping source 1, a wavelength division multiplexer 2, an erbium-doped gain fiber 3, a polarization independent isolator 4, a polarization controller 5, an output coupler 6, a saturable absorber 7 based on tantalum nitride quantum dots and a single-mode fiber 8; wherein the wavelength division multiplexer 2 comprises a first input and a second input; the output coupler 6 comprises 75% output and 25% output; the tantalum nitride quantum dot-based saturable absorber 7 is the tantalum nitride quantum dot-based saturable absorber described in example 1 or 2.
The mode-locked fiber laser structure comprises a laser pumping source 1, a first input end of a wavelength division multiplexer 2, an erbium-doped gain fiber 3, a polarization independent isolator 4, a polarization controller 5, 75% output end of an output coupler 6, a saturable absorber 7 based on tantalum nitride quantum dots and a single-mode fiber 8 body which are sequentially connected, wherein the single-mode fiber 8 is connected with a second input end of the wavelength division multiplexer 2 to form a ring-shaped resonant cavity; the ring resonant cavity takes a single-mode fiber as a main body, and the fiber parameters are EDF type; liekk, er110-4/125, with an Abbe's number of about-15 ps/(nm.km) connected by fiber fusion, and a cavity length of about 20 meters; in a ring resonator, a laser pump source supplies energy into the resonator in pulses or in a continuous form; the erbium-doped gain fiber is used as a gain medium; the wavelength division multiplexer is used for coupling pump light (980 nm) and excitation light (1550 nm) of the erbium-doped optical fiber; the output coupler continuously operates 75% of energy in the laser in the cavity, and 25% of energy is output outside the cavity for detection; the polarization controller is used for adjusting the polarization state and loss of the whole light path; the polarization independent isolator ensures that the entire laser runs unidirectionally within the cavity.
Experimental example 1
According to experimental examples of the application, spectrum test, morphology test and optical performance test are carried out on the tantalum nitride quantum dot obtained in the example 2, the results are shown in fig. 2-6, mode-locking laser characteristic test is carried out on the mode-locking optical fiber laser described in the example 3, the saturable absorber is obtained by depositing the tantalum nitride quantum dot described in the example 2 on the tapered optical fiber, and the result is shown in fig. 9-15.
The results of testing the tantalum nitride quantum dots by the X-ray diffraction spectrometer and the Raman spectrometer are shown in fig. 2-3, and as can be seen from fig. 2-3, the tantalum nitride quantum dots with the height dimension of 1-3 nm can be determined by combining the morphology diagrams shown by the transmission electron microscope and the atomic force microscope shown in fig. 4-6, and most of the tantalum nitride quantum dots with the height dimension distribution of below 2nm can be prepared by the preparation method provided by the embodiment 2 of the application.
The test of the optical performance of the tantalum nitride quantum dot is carried out by adopting a double-arm balance detector, the double-arm balance detector is shown in fig. 7a, the double-arm balance detector consists of a light source, an attenuator, a coupler and two identical power meters A1 and A2, laser is divided into two beams by the coupler, one beam enters the optical power meter A1 for measurement through the loss of the tantalum nitride quantum dot, the other beam directly enters the optical power meter A2 for measurement, and the saturable absorption curve of the material can be obtained by processing and analyzing the data measured by the two power meters; the specific data processing steps are as follows: a 50:50 coupler is used for constructing a double-arm balance detector so as to facilitate data processing; t=p 1 /P 2 (T is transmittance, P 1 、P 2 The power values measured by the power meter a and the power meter b are respectively shown; each transmittance corresponds to a light field intensity, i=p 2 S (I is the light field intensity, S is the core area); processing the above data to obtain a scatter diagram, which can be fitted to a saturable absorption curve (T is transmittance, α according to equation 1 NS Is nonlinear saturable loss, delta T is modulation depth, I is light field intensity, I sat Is the saturated intensity).
The optical properties of the tantalum nitride quantum dots are shown in fig. 7b, from which the basic parameters of the saturable absorber tantalum nitride quantum dots can be obtained, including saturation intensity, modulation depth and non-saturation loss; compared with other two-dimensional materials, the tantalum nitride quantum dot has lower saturation strength, and is a saturable absorber material with more excellent performance.
The mode-locked laser characteristics of the mode-locked fiber laser are shown in fig. 9-15 under the pumping power of 100mW, and fig. 9 is a pulse sequence diagram of the mode-locked fiber laser, which shows that the mode-locked pulse operation is very stable, and the pulse interval is about 46.8ns; FIG. 10 is a broadband spectrum in the 600MHz range of a mode-locked fiber laser, with relatively flat sequences, further illustrating the stability of the mode-locked signal; FIG. 11 is a fundamental frequency spectrum of a mode-locked fiber laser, which can be found to have a signal-to-noise ratio of about 56.27dB; FIG. 12 is a spectral diagram of the mode-locked signal of a mode-locked fiber laser, with a center wavelength of about 1566.92nm and a half-width of about 5.69nm seen; FIG. 13 is a graph showing the spectrum of a mode-locked fiber laser over time, clearly showing that the shape and intensity of the spectrum do not change significantly over a period of 0-80 minutes, further illustrating the stability of the mode-locked signal; FIG. 14 is a graph showing the relationship between the optical path output power and the pump power of a mode-locked fiber laser, when the pump power is increased from 50mW to 300mW, the output power is also changed from 0.5mW to 5.5mW, and the corresponding slope efficiency is 1.92%; fig. 15 shows an autocorrelation curve measured by an autocorrelator of a mode-locked fiber laser, from which it is known that the pulse width of the single pulse output is 1.54×713fs.
According to the test, when laser passes through the tantalum nitride quantum dot-based saturable absorber in the mode-locked fiber laser, the tantalum nitride quantum dot is used as a topological semi-metal, a bulk energy band with topological characteristics is crossed near a Fermi surface to form a material of a zero-gap electronic state, and the material is a saturable absorber material with excellent optical performance and saturation intensity.
The above embodiments are only for illustrating the technical solution of the present application, and not for limiting the same; although the application has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the application.
Claims (10)
1. The saturable absorber based on the tantalum nitride quantum dots is characterized by comprising the tantalum nitride quantum dots and tapered optical fibers;
the tapered optical fiber supports the tantalum nitride quantum dots.
2. The saturable absorber based on tantalum nitride quantum dots according to claim 1, wherein the particle size of the tantalum nitride quantum dots is 1-5 nm.
3. A method for preparing a saturable absorber based on tantalum nitride quantum dots according to any one of claims 1 to 2, comprising the steps of: and (3) dripping the tantalum nitride quantum dot solution on the tapered optical fiber, and depositing to obtain the saturable absorber based on the tantalum nitride quantum dots.
4. The method for preparing a saturable absorber based on tantalum nitride quantum dots according to claim 3, wherein the method for preparing the saturable absorber based on tantalum nitride quantum dots by dripping the solution of tantalum nitride quantum dots onto the tapered optical fiber comprises the following steps:
s1, placing a conical optical fiber in a constant-temperature heating table for preheating to obtain a preheated conical optical fiber;
and S2, dripping the tantalum nitride quantum dot solution in a conical region of the conical optical fiber, introducing 1550nm continuous wave laser at the other end of the conical optical fiber, and surrounding the conical region of the conical optical fiber by the tantalum nitride quantum dot under the action of the optical gradient force of an evanescent field to obtain a saturable absorber based on the tantalum nitride quantum dot.
5. The method for preparing a saturable absorber based on tantalum nitride quantum dots according to claim 4, wherein in step S1, the heating temperature of the constant temperature heating table is 60 ℃;
in step S2, the power of the continuous wave laser is 10 to 30mW.
6. The method for preparing a saturable absorber based on tantalum nitride quantum dots according to claim 3, wherein the method for preparing tantalum nitride quantum dots comprises the steps of:
step S12, mixing the tantalum nitride with an organic solvent, performing ultrasonic treatment, and standing to obtain an organic solution of the tantalum nitride;
and S22, mixing an upper layer solution of the organic solution of tantalum nitride with the organic solvent, centrifuging, and discarding the upper layer solution to obtain the tantalum nitride quantum dot.
7. The method for preparing a saturable absorber based on tantalum nitride quantum dots according to claim 6, wherein in step S12, the power of the ultrasound is 300-500W for 4-8 h;
the standing time is 6-18 h.
8. The method of claim 6, wherein in step S22, the centrifugal speed is 8000-12000 rpm for 1-20 min.
9. The method for preparing a saturable absorber based on tantalum nitride quantum dots according to claim 6, wherein in step S12, the mass-to-volume ratio of the tantalum nitride to the organic solvent is 1-10 g: 10-100 mL.
10. A mode-locked fiber laser, comprising a laser pump source, a wavelength division multiplexer, an erbium-doped gain fiber, a polarization independent isolator, a polarization controller, an output coupler, the tantalum nitride quantum dot-based saturable absorber of any one of claims 1-2, and a single mode fiber;
the wavelength division multiplexer comprises a first input end and a second input end;
the laser pumping source, the first input end of the wavelength division multiplexer, the erbium-doped gain fiber, the polarization independent isolator, the polarization controller, the output coupler, the saturable absorber based on the tantalum nitride quantum dots, the single-mode fiber and the second input end of the wavelength division multiplexer are sequentially connected to form the annular laser resonant cavity.
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