CN116706663A - Saturable absorber based on tantalum arsenide quantum dots, preparation method and mode-locked fiber laser - Google Patents
Saturable absorber based on tantalum arsenide quantum dots, preparation method and mode-locked fiber laser Download PDFInfo
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- 229910052715 tantalum Inorganic materials 0.000 title claims abstract description 110
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims abstract description 110
- 239000002096 quantum dot Substances 0.000 title claims abstract description 101
- 239000006096 absorbing agent Substances 0.000 title claims abstract description 76
- 239000000835 fiber Substances 0.000 title claims abstract description 43
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 239000013307 optical fiber Substances 0.000 claims abstract description 40
- 230000003287 optical effect Effects 0.000 claims abstract description 18
- 230000010287 polarization Effects 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 13
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical group CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 8
- 239000003960 organic solvent Substances 0.000 claims description 8
- 238000005086 pumping Methods 0.000 claims description 6
- 230000009471 action Effects 0.000 claims description 3
- 238000005119 centrifugation Methods 0.000 claims description 2
- 238000009210 therapy by ultrasound Methods 0.000 claims description 2
- 238000002604 ultrasonography Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 21
- 229920006395 saturated elastomer Polymers 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 12
- 230000008021 deposition Effects 0.000 description 11
- 239000007788 liquid Substances 0.000 description 9
- 239000006185 dispersion Substances 0.000 description 7
- 238000001228 spectrum Methods 0.000 description 7
- 238000012360 testing method Methods 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 238000000089 atomic force micrograph Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 229910021389 graphene Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 2
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 2
- 238000001208 nuclear magnetic resonance pulse sequence Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1106—Mode locking
- H01S3/1112—Passive mode locking
- H01S3/1115—Passive mode locking using intracavity saturable absorbers
- H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
- H01S3/06791—Fibre ring lasers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The application belongs to the technical field of saturable absorbers, and particularly relates to a saturable absorber based on tantalum arsenide quantum dots, a preparation method and a mode-locked fiber laser; the saturable absorber provided by the application comprises the tapered optical fiber and the tantalum arsenide quantum dots loaded by the tapered optical fiber, and the tantalum arsenide quantum dots are excellent in nonlinear optical characteristics and saturation intensity, so that when laser passes through the tantalum arsenide quantum dots on the saturable absorber, the laser can reach a saturated state more quickly, ultra-fast laser with repetition frequency can be output, and a laser mode locking signal is stable, so that the technical problem of lower performance of the saturable absorber based on a two-dimensional material in the prior art is solved.
Description
Technical Field
The application belongs to the technical field of saturable absorbers, and particularly relates to a saturable absorber based on tantalum arsenide quantum dots, a preparation method thereof and a mode-locked fiber laser.
Background
The saturable absorber is one of key devices for generating laser pulses, and the current saturable absorber comprises an artificial saturable absorber such as a nonlinear annular mirror, nonlinear polarization evolution and the like, and a non-artificial 'real' saturable absorber such as a semiconductor saturable absorber mirror, a low-dimensional material and the like.
The preparation difficulty and cost of the semiconductor saturable absorber mirror in the saturable absorber limit the wide application of the semiconductor saturable absorber mirror in the field of fiber lasers, and the low-dimensional material is widely applied to the fiber lasers due to the excellent photoelectric characteristics of the low-dimensional material; the existing two-dimensional saturable absorber materials are represented by graphene, molybdenum disulfide, black phosphorus and the like; however, the saturable absorber based on the graphene material has the defect of low absorption efficiency, the complex preparation process and the large energy band gap of the saturable absorber based on the molybdenum disulfide material limit the defect that the saturable absorber is difficult to repeatedly prepare in a large quantity, the saturable absorber based on the black phosphorus material is sensitive to the surrounding environment, has poor stability, cannot stably work for a long time and cannot normally work under special environments such as humidity, and the performance of the saturable absorber based on the two-dimensional material such as graphene is low at present.
Disclosure of Invention
In view of the above, the application provides a saturable absorber based on tantalum arsenide quantum dots, a preparation method thereof and a mode-locked fiber laser, which are used for solving the technical problem that the performance of the saturable absorber based on two-dimensional materials in the prior art is lower.
The first aspect of the application provides a saturable absorber based on tantalum arsenide quantum dots, comprising: tantalum arsenide quantum dots and tapered optical fibers;
the tapered optical fiber supports the tantalum arsenide quantum dots.
Preferably, the particle size of the tantalum arsenide quantum dot is 2.73nm.
The second aspect of the application provides a method for preparing a saturable absorber based on tantalum arsenide quantum dots, comprising the following steps: and (3) dripping the tantalum arsenide quantum dot solution on the tapered optical fiber, and depositing to obtain the saturable absorber based on the tantalum arsenide quantum dots.
Preferably, the step of dripping the tantalum arsenide quantum dot solution on the tapered optical fiber, and the step of obtaining the saturable absorber based on the tantalum arsenide quantum dot after deposition specifically comprises the following steps:
s1, placing a conical optical fiber in a constant-temperature heating table for preheating to obtain a preheated conical optical fiber;
and S2, dripping the tantalum arsenide quantum dot solution in a conical region of the conical optical fiber, introducing 1550nm continuous wave laser at the other end of the conical optical fiber, and surrounding the conical region of the conical optical fiber by the tantalum arsenide quantum dot under the action of the optical gradient force of an evanescent field to obtain the saturable absorber based on the tantalum arsenide quantum dot.
In order to ensure the deposition effect, a dispersion liquid which is far more than the dispersion liquid meeting the cone deposition requirement should be dripped, the optical power is monitored to be reduced along with the continuous deposition process from a power meter, the excessive dripping of the dispersion liquid is waited for a short time, the optical power is basically kept unchanged, the fact that the tapered optical fiber deposits enough tantalum arsenide quantum dot material is not suitable for dripping the dispersion liquid, and therefore the dripping operation needs to be carried out by adjusting the proper volume of the dispersion liquid between 0.2 ml and 2ml according to the concentration of the quantum dot in the dispersion liquid.
Preferably, in step S1, the heating temperature of the constant temperature heating table is 60 ℃.
Preferably, in step S2, the power of the continuous wave laser is 10 to 30mW.
It should be noted that, setting the heating temperature of the constant temperature heating table is favorable for volatilizing the solvent, the incident light power can have a certain influence on the final deposition effect in the process of tapering optical fiber deposition, and when the input power is below 10mW, the output power is basically unchanged, so that the deposition is not performed; the larger the light deposition power is, the more the material deposition amount is, and the larger the modulation depth of the saturable absorber is; when the incident light power exceeds about 30mW, the material deposition is excessive and exceeds the tapered optical fiber bearing threshold value possibly due to the excessive power, the light transmittance is extremely reduced, and the emergent light power is suddenly reduced to be in nanowatts. Therefore, the deposition operation needs to be carried out by adjusting the proper continuous wave laser power between 10mW and 30mW according to the quantum dot concentration in the tantalum arsenide quantum dot.
Preferably, the preparation method of the tantalum arsenide quantum dot comprises the following steps:
step S12, mixing tantalum arsenide with an organic solvent, performing ultrasonic treatment, and standing to obtain an organic solution of tantalum arsenide;
and S22, mixing an upper layer solution of the organic solution of tantalum arsenide with the organic solvent, centrifuging, and discarding the upper layer solution to obtain the tantalum arsenide quantum dot.
Preferably, in step S12, the mass-volume ratio of the tantalum arsenide to the organic solvent is 1-3 g: 30-60 mL.
Preferably, in step S12 and step S22, the organic solvent is selected from ethanol.
Preferably, in step S12, the power of the ultrasound is 300-500W, and the time is 4-8 h.
Preferably, in step S12, the standing time is 4 to 8 hours.
Preferably, in step S22, the rotational speed of the centrifugation is 8000-12000 rpm, and the time is 2-6 min.
The application provides a mode-locked fiber laser, which comprises a laser pumping source, a wavelength division multiplexer, an erbium-doped gain fiber, a polarization independent isolator, a polarization controller, an output coupler, a saturable absorber based on tantalum arsenide quantum dots and a single-mode fiber;
the wavelength division multiplexer comprises a first input end and a second input end;
the laser pumping source, the first input end of the wavelength division multiplexer, the erbium-doped gain fiber, the polarization independent isolator, the polarization controller, the output coupler, the saturable absorber based on the tantalum arsenide quantum dots and the second input end of the single-mode fiber and the wavelength division multiplexer are sequentially connected to form the annular laser resonant cavity.
In summary, the application provides a saturable absorber based on tantalum arsenide quantum dots, a preparation method and a mode-locked fiber laser, wherein the saturable absorber based on tantalum arsenide quantum dots comprises tantalum arsenide quantum dots and tapered optical fibers loaded with tantalum arsenide quantum dots, and the tantalum arsenide quantum dots in the saturable absorber have excellent nonlinear optical characteristics and saturation intensity, so that when laser passes through the tantalum arsenide quantum dots on the saturable absorber, the laser can reach a saturated state more quickly, ultra-fast laser with repetition frequency can be output, and a laser mode-locked signal is stable, thereby solving the technical problem that the saturable absorber based on two-dimensional materials in the prior art has lower performance.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present application, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a morphology diagram of tantalum arsenide quantum dots prepared by the preparation method of example 2 of the present application;
FIG. 2 is a diagram showing nonlinear optical characteristics of tantalum arsenide quantum dots prepared by the preparation method of example 2 of the present application;
FIG. 3 is a schematic structural diagram of a mode-locked fiber laser according to embodiment 3 of the present application;
FIG. 4 is a pulse sequence diagram of a mode-locked fiber laser according to embodiment 3 of the present application;
FIG. 5 is a broadband spectrum diagram of a mode-locked fiber laser according to embodiment 3 of the present application;
FIG. 6 is a fundamental frequency diagram of the mode-locked fiber laser according to embodiment 3 of the present application;
FIG. 7 is a spectrum diagram of a mode-locked fiber laser according to embodiment 3 of the present application;
FIG. 8 is a graph showing the spectrum of the mode-locked fiber laser according to example 3 of the present application over time;
FIG. 9 is a graph showing the relationship between the output power of the optical path and the pump power of the mode-locked fiber laser according to embodiment 3 of the present application;
FIG. 10 is a pulse width diagram of a single pulse of the mode-locked fiber laser according to embodiment 3 of the present application;
FIG. 11 is a black and white control of FIG. 1;
FIG. 1a is a high resolution transmission electron microscope image of a tantalum arsenide quantum dot, FIG. 1b is a transmission electron microscope image of a tantalum arsenide quantum dot, FIG. 1c is an atomic force microscope image of a tantalum arsenide quantum dot, and FIG. 1d is a high profile image of a tantalum arsenide quantum dot;
fig. 2a is a schematic diagram of a dual-arm balanced detector for testing nonlinear optical characteristics of tantalum arsenide quantum dots, and fig. 2b is a saturable absorption curve of tantalum arsenide quantum dots obtained by testing with the dual-arm balanced detector.
Detailed Description
The application provides a saturable absorber based on tantalum arsenide quantum dots, a preparation method thereof and a mode-locked fiber laser, which are used for solving the technical problem that the performance of the saturable absorber based on two-dimensional materials in the prior art is lower.
The following description of the embodiments of the present application will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the application are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
Example 1
In view of the defect of low performance of the existing two-dimensional material saturable absorber, the embodiment 1 of the application provides a tantalum arsenide quantum dot-based saturable absorber, which comprises a tapered optical fiber and tantalum arsenide quantum dots loaded by the tapered optical fiber; the nonlinear optical characteristic test of the double-arm balance detector on the tantalum arsenide quantum dots shows that the tantalum arsenide quantum dots in the saturable absorber have lower saturation intensity, so that when laser passes through the tantalum arsenide quantum dots on the saturable absorber, the laser can reach a saturated state quickly, ultra-fast laser with repetition frequency can be output, a laser mode locking signal is stable, and the defect of lower performance of the conventional saturable absorber based on two-dimensional materials is overcome.
For the tapered optical fiber, the tapered optical fiber is obtained by adopting a tapered mode commonly used in the field, during tapered, the part of the single-mode optical fiber, which needs to be tapered, is firstly subjected to outer film stripping, and then is placed on a tapered machine of a forward melting tapered system for tapered preparation.
Example 2
The embodiment 2 of the application provides a preparation method of the saturable absorber based on tantalum arsenide quantum dots, which is described in the embodiment 1, and comprises the steps of firstly preparing the tantalum arsenide quantum dots and preparing the saturable absorber based on the tantalum arsenide quantum dots.
The preparation method of the tantalum arsenide quantum dot comprises the following steps of: firstly, placing 2g of tantalum arsenide (TaAs) powder into 45ml of ethanol solvent, then placing the ethanol solvent containing tantalum arsenide into an ultrasonic machine for a period of time, and taking out and standing; wherein the power of the ultrasonic machine is 400W, the ultrasonic time is 6 hours, and the standing time is 12 hours;
after standing, mixing 15ml of the upper layer liquid after standing with 15ml of ethanol solvent, centrifuging for 3min at 10,000rpm, and removing the centrifuged upper layer liquid to obtain tantalum arsenide quantum dot solution; the morphology characteristics of the saturable absorber tantalum arsenide quantum dot solution are shown in fig. 1, and the nonlinear optical properties are shown in fig. 2.
The steps for preparing the saturable absorber based on tantalum arsenide quantum dots comprise: 2mL of tantalum arsenide quantum dot solution is dripped on the tapered optical fiber, and a saturable absorber based on the tantalum arsenide quantum dot is obtained after deposition; the method comprises the steps of dripping tantalum arsenide quantum dot solution on a tapered optical fiber, introducing 1550nm continuous wave laser to one side of the tapered optical fiber, surrounding a tapered optical fiber cone region by the tantalum arsenide quantum dot under the action of optical gradient force of an evanescent field, depositing the tantalum arsenide quantum dot on the tapered optical fiber after the dispersion liquid is completely dried, and preparing a saturable absorber based on the tantalum arsenide quantum dot.
Example 3
The embodiment 3 of the application provides a mode-locked fiber laser, the structure of which is shown in figure 3, and the mode-locked fiber laser comprises a laser pumping source 1, a wavelength division multiplexer 2, an erbium-doped gain fiber 3, a polarization independent isolator 4, a polarization controller 5, an output coupler 6, a saturable absorber 7 based on tantalum arsenide quantum dots and a single-mode fiber 8; wherein the wavelength division multiplexer 2 comprises a first input and a second input; the output coupler 6 comprises 75% output and 25% output; the tantalum arsenide quantum dot-based saturable absorber 7 is the tantalum arsenide quantum dot-based saturable absorber described in example 1 or 2.
The structure is that a laser pumping source 1, a first input end of a wavelength division multiplexer 2, an erbium-doped gain optical fiber 3, a polarization independent isolator 4, a polarization controller 5, 75% output end of an output coupler 6, a saturable absorber 7 based on tantalum arsenide quantum dots and a single mode optical fiber 8 are sequentially connected, and the single mode optical fiber 8 is connected with a second input end of the wavelength division multiplexer 2 to form a ring-shaped resonant cavity; the ring resonant cavity is connected by using a single-mode fiber as a main body and an optical fiber fusion method; in a ring resonator, a laser pump source supplies energy into the resonator in pulses or in a continuous form; the erbium-doped gain fiber is used as a gain medium; the wavelength division multiplexer is used for coupling pump light (980 nm) and excitation light (1550 nm) of the erbium-doped optical fiber; the output coupler continuously operates 75% of energy in the laser in the cavity, and 25% of energy is output outside the cavity for detection; the polarization controller is used for adjusting the polarization state and loss of the whole light path; the polarization independent isolator ensures that the entire laser runs unidirectionally within the cavity.
Experimental example 1
According to experimental examples of the application, morphology test and nonlinear optical performance test are carried out on the tantalum arsenide quantum dots obtained in the example 2, the results are shown in fig. 1-2, mode-locking laser characteristic test is carried out on the mode-locking fiber laser described in the example 3, the saturable absorber is obtained by depositing the tantalum arsenide quantum dots described in the example 2 on the tapered optical fiber, and the results are shown in fig. 4-10.
The morphology characterization of the tantalum arsenide quantum dot obtained by adopting a transmission electron microscope and an atomic force microscope is shown in fig. 1, it can be seen from fig. 1a that the tantalum arsenide quantum dot shows clear lattice fringes, the inner plane distance is 0.21nm, the transverse dimension of the tantalum arsenide quantum dot is about 2.73nm as can be seen from fig. 1b, and the AFM images and the height profile of the AFM images shown in fig. 1c and 1d also show similar results, and the preparation method provided by the embodiment 2 of the application can be used for preparing the tantalum arsenide quantum dot.
Tantalum arsenide quantumThe nonlinear optical performance of the point is tested by adopting a double-arm balance detector, as shown in fig. 2a, the double-arm balance detector consists of a light source, an attenuator, a coupler and two identical power meters a and b, laser is divided into two beams by the coupler, one beam enters the optical power meter a for measurement through the loss of tantalum arsenide quantum dots, the other beam directly enters the optical power meter b for measurement, and the saturable absorption curve of the material can be obtained by processing and analyzing the data measured by the two power meters; the specific data processing steps are as follows: a 50:50 coupler is used for constructing a double-arm balance detector so as to facilitate data processing; t=p 1 /P 2 (T is transmittance, P 1 、P 2 The power values measured by the power meter a and the power meter b are respectively shown; each transmittance corresponds to a light field intensity, i=p 2 S (I is the light field intensity, S is the core area); processing the above data to obtain a scatter diagram, which can be fitted to a saturable absorption curve (T is transmittance, α according to equation 1 NS Is nonlinear saturable loss, delta T is modulation depth, I is light field intensity, I sat Is the saturated intensity).
The nonlinear optical properties of the tantalum arsenide quantum dots are shown in fig. 2b, from which the basic parameters of the tantalum arsenide quantum dots of the saturable absorber can be obtained, including saturation intensity, modulation depth and non-saturation loss; compared with other two-dimensional materials, the tantalum arsenide quantum dot has lower saturation intensity, and is a saturable absorber material with more excellent performance.
The mode-locked laser characteristics of the mode-locked fiber laser are shown in fig. 4-10 under the pumping power of 100mW, and fig. 4 is a pulse sequence diagram of the mode-locked fiber laser, which shows that the mode-locked pulse operation is very stable, and the pulse interval is about 47.2ns; FIG. 5 is a broadband spectrum in the 600MHz range of a mode-locked fiber laser, with relatively flat sequences, further illustrating the stability of the mode-locked signal; FIG. 6 is a fundamental frequency spectrum of a mode-locked fiber laser, which can be found to have a signal-to-noise ratio of about 58.12dB; FIG. 7 is a spectral diagram of the mode-locked signal of a mode-locked fiber laser, with a center wavelength of about 1559.41nm and a half-width of about 6.41nm seen. The method comprises the steps of carrying out a first treatment on the surface of the FIG. 8 is a graph showing the spectrum of a mode-locked fiber laser over time, clearly showing that the shape and intensity of the spectrum do not change significantly over a period of 0-80 minutes, further illustrating the stability of the mode-locked signal; FIG. 9 is a graph showing the relationship between the optical path output power and the pump power of a mode-locked fiber laser, when the pump power is increased from 50mW to 300mW, the output power is also changed from 0.5mW to 5mW, and the corresponding slope efficiency is 1.66%; fig. 10 shows an autocorrelation curve measured by an autocorrelator of a mode-locked fiber laser, from which it is known that the pulse width of the single pulse output is 1.54×621fs.
According to the experiment, when laser passes through the tantalum arsenide quantum dot-based saturable absorber in the mode-locked fiber laser, the part with small pulse intensity is more lost by the saturable absorber, the part with large intensity is less lost, and side mode suppression is effectively realized, so that the pulse is compressed; meanwhile, the tantalum arsenide quantum dot has lower saturation intensity, laser energy in the resonant cavity enables the tantalum arsenide quantum dot to reach a saturation state, so that ultra-fast laser with repetition frequency is output, a laser mode locking signal is stable, and the performance is superior to that of other saturable absorbers based on two-dimensional materials.
The above embodiments are only for illustrating the technical solution of the present application, and not for limiting the same; although the application has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the application.
Claims (10)
1. A saturable absorber based on tantalum arsenide quantum dots, comprising: tantalum arsenide quantum dots and tapered optical fibers;
the tapered optical fiber supports the tantalum arsenide quantum dots.
2. The method for preparing the saturable absorber based on tantalum arsenide quantum dots according to claim 1, wherein the preparation method comprises the following steps: and (3) dripping the tantalum arsenide quantum dot solution on the tapered optical fiber, and depositing to obtain the saturable absorber based on the tantalum arsenide quantum dots.
3. The method for preparing a saturable absorber based on tantalum arsenide quantum dots according to claim 2, wherein the step of dripping the tantalum arsenide quantum dot solution onto the tapered optical fiber, and the step of depositing to obtain the saturable absorber based on tantalum arsenide quantum dots specifically comprises the following steps:
s1, placing a conical optical fiber in a constant-temperature heating table for preheating to obtain a preheated conical optical fiber;
and S2, dripping the tantalum arsenide quantum dot solution in a conical region of the conical optical fiber, introducing 1550nm continuous wave laser at the other end of the conical optical fiber, and surrounding the conical region of the conical optical fiber by the tantalum arsenide quantum dot under the action of the optical gradient force of an evanescent field to obtain the saturable absorber based on the tantalum arsenide quantum dot.
4. The method for preparing a saturable absorber based on tantalum arsenide quantum dots according to claim 3, wherein in step S1, the heating temperature of the constant temperature heating table is 60 ℃;
in step S2, the power of the continuous wave laser is 10 to 30mW.
5. The method for preparing a saturable absorber based on tantalum arsenide quantum dots according to claim 2, wherein the method for preparing tantalum arsenide quantum dots comprises the steps of:
step S12, mixing tantalum arsenide with an organic solvent, performing ultrasonic treatment, and standing to obtain an organic solution of tantalum arsenide;
and S22, mixing an upper layer solution of the organic solution of tantalum arsenide with the organic solvent, centrifuging, and discarding the upper layer solution to obtain the tantalum arsenide quantum dot.
6. The method for preparing a saturable absorber based on tantalum arsenide quantum dots according to claim 5, wherein in step S12, the mass-to-volume ratio of tantalum arsenide to organic solvent is 1-3 g: 30-60 mL.
7. The method for preparing a saturable absorber based on tantalum arsenide quantum dots according to claim 5, wherein in step S12, the power of the ultrasound is 300-500W for 4-8 h;
the standing time is 4-8 h.
8. The method of preparing a tantalum arsenide quantum dot-based saturable absorber according to claim 5, wherein in step S22, the rotational speed of the centrifugation is 8000-12000 rpm for 2-6 min.
9. The method for preparing a saturable absorber based on tantalum arsenide quantum dots according to claim 2, wherein in step S12 and step S22, the organic solvent is selected from ethanol.
10. The mode-locked fiber laser is characterized by comprising a single-mode fiber connected with a pump source, a wavelength division multiplexer, an erbium-doped gain fiber, a polarization independent isolator, a saturable absorber based on tantalum arsenide quantum dots, a polarization controller and an output coupler;
the output end of the pumping light source is connected with the input end of the wavelength division multiplexer;
the output end of the wavelength division multiplexer is connected with the input end of the erbium-doped gain fiber, and the output end of the erbium-doped fiber is connected with the input end of the polarization-independent isolator;
the output end of the polarization independent isolator is connected with the input end of the saturable absorber based on the tantalum arsenide quantum dots, and the output end of the saturable absorber based on the tantalum arsenide quantum dots is connected with the input end of the polarization controller;
the output end of the polarization controller is connected with the input end of the output coupler, and the output end of the output coupler is connected with the output end of the wavelength division multiplexer to form the annular laser resonant cavity.
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