CN116741903A - Micro LED luminous structure, manufacturing method thereof and display device - Google Patents

Micro LED luminous structure, manufacturing method thereof and display device Download PDF

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Publication number
CN116741903A
CN116741903A CN202310430599.1A CN202310430599A CN116741903A CN 116741903 A CN116741903 A CN 116741903A CN 202310430599 A CN202310430599 A CN 202310430599A CN 116741903 A CN116741903 A CN 116741903A
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light
light emitting
electrode
layer
type layer
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钟舒婷
刘弈镈
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Shenzhen Stan Technology Co Ltd
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Shenzhen Stan Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes

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  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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Abstract

The invention discloses a miniature LED luminous structure, a preparation method thereof and a display device, wherein the miniature LED luminous structure comprises a substrate and a luminous unit epitaxially grown on the substrate; the light-emitting unit comprises more than two light-emitting diodes vertically arranged on the substrate and an insulating layer arranged between the adjacent light-emitting diodes, and each light-emitting diode respectively emits light rays with different colors; the light-emitting unit is also provided with N pole steps which are respectively sunken to the N type layers of the light-emitting diodes from the topmost layer of the light-emitting unit and P pole steps which are respectively sunken to the P type layers of the light-emitting diodes; the passivation layer is arranged on the same layer as each P electrode and each N electrode; the light emitting unit further includes an electrode connecting bridge disposed above each P electrode or each N electrode. The invention not only improves the pixel density, but also avoids mass transfer.

Description

Micro LED luminous structure, manufacturing method thereof and display device
Technical Field
The invention relates to the technical field of light emission, in particular to a miniature LED light emitting structure, a manufacturing method thereof and a display device.
Background
The existing full-color micro LED light-emitting structure is realized by quantum dots, and referring to FIG. 1, the specific preparation method comprises the following steps: 1) Etching the epitaxial wafer to form a micro LED array, wherein each micro LED is a pixel point; 2) And sequentially depositing quantum dots with corresponding colors on the miniature LED luminous units corresponding to the R/G/B pixel points. The method has the following defects: the R/G/B pixel points are arranged in an array manner in the horizontal direction, so that the pixel density is lower and the resolution ratio is lower under the same processing condition.
Another way is to transfer a huge amount of discrete micro LED devices of R/G/B colors to the same substrate in turn by mass transfer. The method has the following defects: three mass transfer processes are needed, the mass transfer rate is low, the yield is low, the production capacity is limited, and the production cost is high.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide a novel miniature LED light-emitting structure, a preparation method thereof and a display device, so that mass transfer is avoided, and meanwhile, the pixel density is improved.
In order to achieve the above purpose, the technical scheme of the invention is as follows:
a miniature LED luminous structure comprises a substrate and a luminous unit epitaxially grown on the substrate; the light-emitting unit comprises more than two light-emitting diodes vertically arranged on the substrate and an insulating layer arranged between the adjacent light-emitting diodes, each light-emitting diode comprises an N-type layer, an active quantum hydrazine layer and a P-type layer which are sequentially stacked along the upward direction of the substrate, and the active quantum hydrazine layers of the light-emitting diodes included in the light-emitting unit respectively emit light rays with different colors;
the light emitting unit further has an N-pole step recessed from a topmost layer of the light emitting unit to the N-type layer of each light emitting diode, respectively, and a P-pole step recessed from the topmost layer of the light emitting unit to the P-type layer of each light emitting diode, respectively;
the light-emitting unit further comprises N electrodes respectively arranged on the N electrode steps, P electrodes respectively arranged on the P electrode steps and the uppermost P-type layer, and passivation layers arranged on the same layers as the P electrodes and the N electrodes, wherein the passivation layers are positioned on the top surface and the side walls of the light-emitting unit;
the light emitting unit further includes an electrode connection bridge disposed over each of the P electrodes or each of the N electrodes, the electrode connection bridge being for sharing the electrode with each of the P electrodes or each of the N electrodes.
The invention also discloses a preparation method of the miniature LED luminous structure, which comprises the following steps:
epitaxially growing an N-type layer, an active quantum hydrazine layer and a P-type layer of each light emitting diode and an insulating layer positioned between adjacent light emitting diodes on a substrate to form an epitaxial wafer; the number of the light emitting diodes is more than two, and each light emitting diode is vertically arranged;
starting etching from the uppermost layer of the epitaxial wafer, respectively forming an N pole step etched to the N type layer of each light emitting diode and a P pole step etched to the P type layer of each light emitting diode, and obtaining an etched epitaxial wafer;
forming passivation layers on the top surface and the side walls of the etched epitaxial wafer;
etching the passivation layer at the corresponding positions of each N pole step and each P pole step to form a through hole;
filling the through holes to form P electrodes and N electrodes;
and forming an electrode connecting bridge above each P electrode or each N electrode, wherein the electrode connecting bridge is used for enabling each P electrode or each N electrode to share the electrode.
The invention also discloses a display device comprising the micro LED light-emitting structure or the micro LED light-emitting structure manufactured by the manufacturing method.
The implementation of the embodiment of the invention has the following beneficial effects:
according to the embodiment of the invention, the pixel density and the resolution can be improved by vertically arranging the light emitting diodes; forming each functional layer structure of the light-emitting unit through epitaxial growth, and etching each P electrode step and each N electrode step from the uppermost P type layer, so that massive transfer is avoided, the production yield and speed are improved, and the cost is reduced; the common electrode is arranged, so that the control complexity can be simplified, and the design difficulty and performance requirements of the active driving substrate and the peripheral control circuit are reduced. In addition, the miniature LED light-emitting structure is an integrated device formed by epitaxial growth and etching, and the structure and the electrical performance are more stable.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Wherein:
fig. 1 is a schematic cross-sectional view of a micro LED lighting structure according to an embodiment of the present invention.
Fig. 2 is a schematic cross-sectional structure of an epitaxial wafer according to an embodiment of the present invention.
Fig. 3 is a schematic cross-sectional structure of the epitaxial wafer shown in fig. 2 etched to form a P-pole step and an N-pole step.
Fig. 4 is a schematic cross-sectional view of a passivation layer formed on the structure shown in fig. 3.
Fig. 5 is a schematic cross-sectional view of a via etched in the structure of fig. 4.
Fig. 6 is a schematic cross-sectional structure of the structure shown in fig. 5 with a P electrode and an N electrode formed by filling a via hole.
Fig. 7 is a schematic cross-sectional structure of an electrode connecting bridge formed on the structure shown in fig. 6.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1, the invention discloses a micro LED light emitting structure, comprising a substrate 10 and a light emitting unit 20 epitaxially grown on the substrate 10; the light emitting unit 20 includes two or more light emitting diodes 21 vertically disposed on the substrate 10 and an insulating layer 22 disposed between adjacent light emitting diodes 21, the insulating layer 22 electrically insulating the adjacent light emitting diodes 21, each light emitting diode 21 includes an N-type layer 211, an active quantum hydrazine layer 212 and a P-type layer 213 sequentially stacked in an upward direction along the substrate 10, and the active quantum hydrazine layers 212 of each light emitting diode 21 respectively emit light of different colors. The light emitting unit 20 epitaxially grown on the substrate 10 refers to a light emitting unit 20 formed by sequentially epitaxially growing functional layer structures (including an N-type layer 211, an active quantum hydrazine layer 212, a P-type layer 213, an insulating layer 22, and may also include a buffer layer, a current spreading layer, etc.) on the substrate 10, and the light emitting unit 20 is integrated, so that the structure and the electrical performance are more stable.
The light emitting unit 20 further has N-pole steps 23 respectively recessed from the topmost layer of the light emitting unit 20 to the N-type layers 211 of the respective light emitting diodes 21 and P-pole steps 24 respectively recessed from the topmost layer of the light emitting unit 20 to the P-type layers 213 of the respective light emitting diodes 21; the light emitting unit 20 further includes N electrodes 25 respectively disposed on the N electrode steps 23, P electrodes 26 respectively disposed on the P electrode steps 24 and the uppermost P-type layer 213, and passivation layers 27 disposed on the same layers as the P electrodes 26 and the N electrodes 25, the passivation layers 27 being formed on the top and side walls of the light emitting unit 20. By providing the P electrode 26 and the N electrode 25 for each light emitting diode 21, each light emitting diode 21 can be individually controlled to emit light, so that the light emitting unit 20 displays different colors, thereby realizing color display.
In the above technical solution, at least one light emitting unit 20 may include two vertically arranged leds, for example, each emitting blue light and yellow-green light, and the two light rays may be combined to obtain white light. One light emitting unit 20 includes at least three vertically arranged light emitting diodes, and full color display, for example, R/G/B three-color full color display can be realized.
The light emitting unit 20 further includes an electrode connection bridge 28, the electrode connection bridge 28 being disposed above each P electrode 26 or each N electrode 25, the electrode connection bridge 28 being configured to make each P electrode 26 or each N electrode 25 common to the electrodes. The common electrode arrangement can simplify the control complexity and reduce the design difficulty and performance requirements of the active drive substrate 30 and the peripheral control circuit. The material of the electrode connecting bridge 28 is preferably the same as that of each of the P electrodes 26 and each of the N electrodes 25.
In the present invention, the number of the light emitting units 20 is two or more, and two or more may be two or three or more. Each light emitting unit 20 is horizontally arranged on the substrate 10 at intervals, each light emitting unit 20 forms a pixel point, each light emitting unit 20 is in micrometer/nanometer size, the distance between adjacent light emitting units 20 is in nanometer level, and the formed miniature LED light emitting structure is used for displaying any image information such as colorful characters, patterns and the like.
The invention can improve the pixel density and the resolution by vertically arranging the light emitting diodes 21; forming each functional layer structure of the light emitting unit 20 through epitaxial growth, and etching each P-electrode step 24 and each N-electrode step 23 from the uppermost P-type layer 213, thereby avoiding massive transfer, improving the production yield and speed, and reducing the cost; by the arrangement of the common electrode, the control complexity can be simplified, and the design difficulty and performance requirements of the active driving substrate 30 and the peripheral control circuit can be reduced. In addition, the miniature LED light-emitting structure is an integrated device formed by epitaxial growth and etching, and the structure and the electrical performance are more stable.
Specifically, referring to fig. 1, in a specific embodiment, full-color display is implemented by three colors of R/G/B, the light emitting unit 20 includes a first light emitting diode 21, a second light emitting diode 21, and a third light emitting diode 21 vertically disposed on the substrate 10, the first light emitting diode 21 includes a first N-type layer 211, a first active quantum hydrazine layer 212, and a first P-type layer 213 sequentially disposed above the substrate 10, the second light emitting diode 21 includes a second N-type layer 211, a second active quantum hydrazine layer 212, and a second P-type layer 213 sequentially disposed above the substrate 10, the third light emitting diode 21 includes a third N-type layer 211, a third active quantum hydrazine layer 212, and a third P-type layer 213 sequentially disposed above the substrate 10, a first insulating layer 22 is further included between the first light emitting diode 21 and the second light emitting diode 21, a second insulating layer 22 is further included between the second light emitting diode 21 and the third light emitting diode 21, and the first active quantum hydrazine layer 212, the second active quantum hydrazine layer 212, and the third active quantum hydrazine layer 212 emit red, green, blue light, and blue light, respectively. The first N-type layer 211, the first active quantum hydrazine layer 212, the first P-type layer 213, the second N-type layer 211, the second active quantum hydrazine layer 212, the second P-type layer 213, the third N-type layer 211, the third active quantum hydrazine layer 212, the third P-type layer 213, the first insulating layer 22, and the second insulating layer 22 are all formed by epitaxial growth on the substrate 10.
The light emitting unit 20 further has a first N-pole step 23 recessed from the third P-type layer 213 to the first N-type layer 211, a second N-pole step 23 recessed from the third P-type layer 213 to the second N-type layer 211, a third N-pole step 23 recessed from the third P-type layer 213 to the third N-type layer 211, a first P-pole step 24 recessed from the third P-type layer 213 to the first P-type layer 213, and a second P-pole step 24 recessed from the third P-type layer 213 to the second P-type layer 213.
The light emitting unit 20 further includes a first N electrode 25 disposed on the first N electrode step 23, a second N electrode 25 disposed on the second N electrode step 23, a third N electrode 25 disposed on the third N electrode step 23, a first P electrode 26 disposed on the first P electrode step 24, a second P electrode 26 disposed on the second P electrode step 24, a third P electrode 26 disposed on the third P-type layer 213, and a passivation layer 27 disposed on the same layer as each of the N electrodes 25 and each of the P electrodes 26, wherein the passivation layer 27 is disposed on the top surface and the side wall of the light emitting unit 20. The light emitting unit 20 further includes an electrode connection bridge 28 provided above each N electrode 25, and the electrode connection bridge 28 makes each N electrode 25 common to the electrodes.
In the above technical solution, by controlling one of the three light emitting diodes 21 to emit light individually, R/G/B full color display can be realized. Of course, in other embodiments, the first active quantum hydrazine layer 212, the second active quantum hydrazine layer 212 and the third active quantum hydrazine layer 212 may emit light of any color, and one or more of the three light emitting diodes 21 may be controlled to emit light simultaneously, so as to realize full-color display by multiplexing light.
In one embodiment, further, each active quantum hydrazine layer 212 is made of an inorganic material, and the inorganic material has a longer service life and more stable luminescence. In the prior art for realizing a full-color micro LED light-emitting structure by using quantum dots, quantum dots with corresponding colors are sequentially deposited on the micro LED light-emitting units 20 corresponding to the R/G/B pixel points, and the quantum dot material is usually an organic material, has poor stability, is difficult to be applied to an extreme temperature environment, has quantum confinement effect, and is limited in product application. In addition, each functional layer structure can be formed by adopting a molecular beam epitaxy method, a CVD method or a PVD method, and epitaxial growth preparation is facilitated.
In one embodiment, further, the material of each N-type layer 211 is the same, and the material of each P-type layer 213 is the same. Here, the same material does not mean absolutely the same, but means that semiconductor materials belonging to the same category, such as gallium nitride material or indium gallium nitride material, etc., are allowed to have a small amount of doping of different materials, at least have the same or similar turn-on voltage, so that the three light emitting diodes 21 vertically distributed in the light emitting unit 20 can be arranged with the same P-pole or the same N-pole, the design difficulty of the active driving substrate 30 and the peripheral control circuit can be simplified, and the performance requirements of the active driving substrate 30 and the peripheral control circuit can be reduced.
Specifically, the material of the N-type layer 211 may be selected from gallium nitride material, indium gallium nitride material, etc., the material of the P-type layer 213 may be selected from gallium nitride material, indium gallium nitride material, etc., and the materials of the N-type layer 211 and the P-type layer 213 may be the same or different.
The material of the insulating layer 22 may be at least one selected from silicon oxide, silicon nitride, and photoresist. In practice, the photoresist may function as an organic insulating planarization layer, for example, polyimide (PI), benzocyclobutene (BCB), or the like.
The material of the substrate 10 may be selected from a sapphire substrate, a gallium nitride substrate, or an indium gallium nitride substrate, preferably, the material of the substrate 10 is the same as that of the N-type layer 211, and the N-type layer 211 is homoepitaxially grown on the substrate 10, so that lattice defects and dislocation density at the interface where the N-type layer 211 is connected with the substrate 10 can be reduced, a current density peak value can be realized at a low current density, and external quantum efficiency (External Quantum Efficiency, EQE) is higher, and meanwhile, display uniformity is better. Of course, in other embodiments, a buffer layer that is homogenous with the N-type layer 211 may also be added between the non-homogenous substrate 10 and the N-type layer 211 to reduce dislocation density at the interface.
In a preferred embodiment, each N-type layer 211 and each P-type layer 213 are made of the same material, so that not only the lattice defect and dislocation density at the interface are reduced, but also the material systems of the vertically distributed leds 21 are close, the turn-on voltages are similar, the electrical characteristics are similar, the design difficulty and performance requirements of the active driving substrate 30 and the peripheral control circuit are reduced, and meanwhile, the change trend of the photoelectric conversion efficiency along with the current density and the aging rate of the device are similar, so that the visual chromatic aberration in the display process can be improved.
In a preferred embodiment, each of the N-type layers 211 and the P-type layers 213 is made of gallium nitride material or indium gallium nitride material. Gallium nitride/indium gallium nitride material is the most advanced third generation semiconductor material at present, and has the characteristics of wider forbidden bandwidth, higher thermal conductivity, higher radiation resistance, larger electron saturation drift rate and the like.
In the prior art for realizing a full-color micro LED light-emitting structure by adopting mass transfer, discrete micro LED devices with R/G/B colors respectively belong to different material systems, wherein blue light LEDs and green light LEDs belong to an InGaN material system, and the starting voltage of the devices is 2.5V-3V; while the red LEDs belong to the AlGaInP material system, the device turn-on voltage is about 1.7V, so for the R, G, B three-color LEDs, the different electrical characteristics thereof pose challenges to the design of the active driving substrate 30 and the peripheral control circuitry. The three-color LED belongs to different material systems, and the micro-nano structures of the devices are different, so that the three-color LED is different from the substrate in interconnection mode, the process complexity of micro-nano manufacturing of the devices is increased, and new technical challenges are brought to substrate design and mass transfer; because the three-color LED epitaxial structure is different from a material system, the change trend of the photoelectric conversion efficiency along with the current density and the ageing rate of the device are also different, so that visual chromatic aberration is easily caused in the display process.
With continued reference to fig. 1, the micro LED light emitting structure further includes an active drive substrate 30 disposed on a side of the light emitting unit 20 facing away from the substrate 10, the active drive substrate 30 being electrically connected to the electrode connecting bridge 28, each N or P electrode 26, respectively, through a conductive material 40. In one embodiment, the active driving substrate 30 is a driving chip.
In a specific embodiment, the passivation layer 27 may be formed by a CVD coating method, and the material of the passivation layer 27 may be silicon oxide or silicon nitride. The passivation layer 27 may also improve a short circuit phenomenon that may occur between the light emitting cells 20.
Referring to fig. 1 to 7, the invention also discloses a preparation method of the micro LED light-emitting structure shown in fig. 1, comprising the following steps:
1) An N-type layer 211, an active quantum hydrazine layer 212 and a P-type layer 213 of each light emitting diode 21, and an insulating layer 22 between adjacent light emitting diodes 21 are epitaxially grown on the substrate 10 to form an epitaxial wafer as shown in fig. 2; the number of the light emitting diodes 21 is more than two, and each light emitting diode 21 is vertically arranged.
In this embodiment, a U-GaN buffer layer 11, an N-type layer 211 of N-GaN, a blue active quantum hydrazine layer 212, a P-type layer 213 of P-GaN, an insulating layer 22, an N-type layer 211 of N-GaN, a green active quantum hydrazine layer 212, a P-type layer 213 of P-GaN, an insulating layer 22, an N-type layer 211 of N-GaN, a red active quantum hydrazine layer 212, and a P-type layer 213 of P-GaN are sequentially grown on a GaN substrate 10.
2) Starting etching from the uppermost layer of the epitaxial wafer, forming an N-pole step 23 etched to the N-type layer 211 of each light emitting diode 21 and a P-pole step 24 etched to the P-type layer 213 of each light emitting diode 21, respectively, to obtain an etched epitaxial wafer, as shown in fig. 3.
3) A passivation layer 27 is formed on the top and side walls of the etched epitaxial wafer by a CVD coating method, as shown in fig. 4.
4) The passivation layer 27 is etched at the corresponding positions of each N-pole step 23 and each P-pole step 24 to form a via 271, as shown in fig. 5.
5) The through holes 271 are filled with metal to form the N electrodes 25 and the P electrodes 26, as shown in fig. 6.
6) An electrode connection bridge 28 is formed above each N electrode 25 or each P electrode 26, and the electrode connection bridge 28 is used to make each N electrode 25 or each P electrode 26 common to the electrodes, as shown in fig. 7.
7) Conductive solders such as indium balls are printed at the electrode connection bridge 28 and each N or P electrode 26, and the active driving substrate 30 is superimposed over the light emitting unit 20, and is fixedly connected with the light emitting unit 20 by the conductive solders, as shown in fig. 1.
The invention also discloses a display device comprising the micro LED light-emitting structure or the micro LED light-emitting structure manufactured by the manufacturing method. The display device is mainly applied to display screens of various electronic devices (wearable electronic devices, mobile phones, computers, televisions, flat panels, household appliances and the like).
The above examples illustrate only a few embodiments of the invention, which are described in detail and are not to be construed as limiting the scope of the claims. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.

Claims (10)

1. The miniature LED light-emitting structure is characterized by comprising a substrate and a light-emitting unit epitaxially grown on the substrate; the light-emitting unit comprises more than two light-emitting diodes vertically arranged on the substrate and an insulating layer arranged between the adjacent light-emitting diodes, each light-emitting diode comprises an N-type layer, an active quantum hydrazine layer and a P-type layer which are sequentially stacked along the upward direction of the substrate, and the active quantum hydrazine layers of the light-emitting diodes included in the light-emitting unit respectively emit light rays with different colors;
the light emitting unit further has an N-pole step recessed from a topmost layer of the light emitting unit to the N-type layer of each light emitting diode, respectively, and a P-pole step recessed from the topmost layer of the light emitting unit to the P-type layer of each light emitting diode, respectively;
the light-emitting unit further comprises N electrodes respectively arranged on the N electrode steps, P electrodes respectively arranged on the P electrode steps and the uppermost P-type layer, and passivation layers arranged on the same layers as the P electrodes and the N electrodes, wherein the passivation layers are positioned on the top surface and the side walls of the light-emitting unit;
the light emitting unit further includes an electrode connection bridge disposed over each of the P electrodes or each of the N electrodes, the electrode connection bridge being for sharing the electrode with each of the P electrodes or each of the N electrodes.
2. The micro LED lighting structure of claim 1, wherein the number of the light emitting diodes is 3, and the active quantum hydrazine layer of each light emitting diode emits red, green and blue light respectively.
3. The micro LED light emitting structure of claim 1 or 2, wherein each of the active quantum hydrazine layers is an inorganic material.
4. The micro LED lighting structure of claim 3, wherein the material of each N-type layer is the same and the material of each P-type layer is the same.
5. The micro LED lighting structure of claim 4, comprising at least one of the following technical features a-f:
a: the material of the N-type layer is selected from gallium nitride material or indium gallium nitride material;
b: the material of the P-type layer is selected from gallium nitride material or indium gallium nitride material;
c: the material of the insulating layer is selected from silicon oxide, silicon nitride or photoresist;
d: the material of the substrate is selected from sapphire, gallium nitride material or indium gallium nitride material;
e: the material of the passivation layer is selected from silicon oxide or silicon nitride.
6. The micro LED lighting structure of claim 5, wherein each of the N-type layers and each of the P-type layers are of the same material.
7. The micro LED light emitting structure according to any one of claims 1 to 6, further comprising an active driving substrate disposed on a side of the light emitting unit facing away from the substrate, the active driving substrate being electrically connected to the electrode connection bridge and each of the N electrodes, respectively, or the active driving substrate being electrically connected to the electrode connection bridge and each of the P electrodes, respectively.
8. The micro LED lighting structure of claim 7, wherein the active driving substrate is a driving chip.
9. The preparation method of the miniature LED light-emitting structure is characterized by comprising the following steps of:
epitaxially growing an N-type layer, an active quantum hydrazine layer and a P-type layer of each light emitting diode and an insulating layer positioned between adjacent light emitting diodes on a substrate to form an epitaxial wafer; the number of the light emitting diodes is more than two, and each light emitting diode is vertically arranged;
starting etching from the uppermost layer of the epitaxial wafer, respectively forming an N pole step etched to the N type layer of each light emitting diode and a P pole step etched to the P type layer of each light emitting diode, and obtaining an etched epitaxial wafer;
forming passivation layers on the top surface and the side walls of the etched epitaxial wafer;
etching the passivation layer at the corresponding positions of each N pole step and each P pole step to form a through hole;
filling the through holes to form P electrodes and N electrodes;
and forming an electrode connecting bridge above each P electrode or each N electrode, wherein the electrode connecting bridge is used for enabling each P electrode or each N electrode to share the electrode.
10. A display device comprising the micro LED light-emitting structure according to any one of claims 1 to 8, or comprising the micro LED light-emitting structure manufactured by the manufacturing method according to claim 9.
CN202310430599.1A 2023-04-13 2023-04-13 Micro LED luminous structure, manufacturing method thereof and display device Pending CN116741903A (en)

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