CN116741695A - Electrostatic chuck ceramic functional layer and electrostatic chuck - Google Patents
Electrostatic chuck ceramic functional layer and electrostatic chuck Download PDFInfo
- Publication number
- CN116741695A CN116741695A CN202310737396.7A CN202310737396A CN116741695A CN 116741695 A CN116741695 A CN 116741695A CN 202310737396 A CN202310737396 A CN 202310737396A CN 116741695 A CN116741695 A CN 116741695A
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- Prior art keywords
- layer
- ceramic
- electrostatic chuck
- functional layer
- surface layer
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- 239000000919 ceramic Substances 0.000 title claims abstract description 115
- 239000002346 layers by function Substances 0.000 title claims abstract description 56
- 239000010410 layer Substances 0.000 claims abstract description 99
- 239000002344 surface layer Substances 0.000 claims abstract description 51
- 229910052751 metal Inorganic materials 0.000 claims abstract description 40
- 239000002184 metal Substances 0.000 claims abstract description 40
- 238000005245 sintering Methods 0.000 claims description 10
- 239000012528 membrane Substances 0.000 claims description 8
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000010344 co-firing Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
Abstract
The invention relates to the technical field of semiconductor processing, in particular to an electrostatic chuck ceramic functional layer and an electrostatic chuck. An electrostatic chuck ceramic functional layer comprises a first surface layer, a second surface layer and a third surface layer, wherein the first surface layer is provided with an upper surface and a lower surface which are opposite; a second skin layer disposed on an upper surface of the first skin layer; the metal layer is arranged between the first surface layer and the second surface layer; wherein, any one layer of the first surface layer and the second surface layer is a sintered ceramic plate, and the other layer is a ceramic film layer; the ceramic film layer is deposited on the sintered ceramic plate. According to the electrostatic chuck ceramic functional layer, the mode of combining the sintered ceramic plate and the ceramic film layer is adopted, so that the electrostatic chuck ceramic functional layer with large size, high quality and good stability can be simply and rapidly obtained, and the finally obtained large-size electrostatic chuck is stable in structure and good in performance.
Description
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to an electrostatic chuck ceramic functional layer and an electrostatic chuck.
Background
An electrostatic chuck (electrostatic chuck, abbreviated as ESC) is a critical component of a plasma processing apparatus, such as a plasma etching apparatus.
At present, with the development of semiconductor technology, the size of the wafer gradually increases, and the wafer is developed towards a large-size wafer. The electrostatic chuck is an important part in the processing process, and manufacturers are increasingly demanding large-sized electrostatic chucks.
In the prior art, the electrostatic chuck is mainly prepared by sintering ceramics, and at present, some manufacturers directly deposit ceramic films on a substrate, and the technology of an intermediate bonding layer is omitted. But this result results in processing inconveniences while the overall strength, overall uniformity of the ceramic layer, and final property stability are affected.
Meanwhile, when the large-size electrostatic chuck is sintered, the problems of the middle electrode and the whole material are considered, the difficulty of the sintering process is high, and the ceramic layer is easy to crack and discard.
Therefore, how to improve the structure of the ceramic functional layer of the electrostatic chuck, so that the overall stability and the production simplicity can be improved under the condition of meeting the requirement of large size, and the ceramic functional layer becomes one direction of improvement.
Disclosure of Invention
In order to solve the problems of large sintering difficulty and easy cracking in the sintering process of the large-size electrostatic chuck in the prior art, the invention provides a ceramic functional layer of the electrostatic chuck, which comprises
A first surface layer having opposite upper and lower surfaces;
a second surface layer arranged on the upper surface of the first surface layer;
the metal layer is arranged between the first surface layer and the second surface layer;
wherein, any one layer of the first surface layer and the second surface layer is a sintered ceramic plate, and the other layer is a ceramic film layer; a ceramic film layer is deposited on the sintered ceramic plate.
In one embodiment, the sintered ceramic plate is provided with a receiving cavity, and the metal layer is disposed in the receiving cavity.
In an embodiment, the first surface layer is provided with a first through hole penetrating through the thickness direction of the first surface layer, and the metal layer is electrically connected with the outside through the first through hole.
In one embodiment, the device further comprises an additional functional unit, wherein the additional functional unit comprises a ceramic dielectric layer and an additional functional layer, and the ceramic dielectric layer is arranged between the first surface layer and the metal layer; the additional functional layer is arranged on one side of the ceramic dielectric layer far away from the metal layer.
In one embodiment, the first via extends through the ceramic dielectric layer; the additional functional layer is electrically connected with the outside through a second through hole; the second through hole penetrates through the first surface layer.
In an embodiment, the additional functional units are arranged in at least 1 group.
In one embodiment, the ceramic dielectric layer is a ceramic film and the additional functional layer is a metal circuit.
In one embodiment, the resistivity of the second surface layer is greater than 1×10 8 Ω·m。
In one embodiment, the material of the sintered ceramic plate is any one of alumina or aluminum nitride; the ceramic membrane layer is made of any one of aluminum oxide or aluminum nitride.
In one embodiment, the metal layer is made of any one of tungsten, titanium, copper, molybdenum, gold, silver, or platinum.
The invention also provides an electrostatic chuck which adopts the ceramic functional layer of the electrostatic chuck.
Based on the above, compared with the prior art, the electrostatic chuck ceramic functional layer provided by the invention can simply and rapidly obtain the electrostatic chuck ceramic functional layer with large size, high quality and good stability by adopting a mode of combining the sintered ceramic plate and the ceramic film layer, so that the finally obtained large-size electrostatic chuck has stable structure and good performance.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
For a clearer description of embodiments of the invention or of the solutions of the prior art, the drawings that are needed in the description of the embodiments or of the prior art will be briefly described, it being obvious that the drawings in the description below are some embodiments of the invention, and that other drawings can be obtained from them without inventive effort for a person skilled in the art; the positional relationships described in the drawings in the following description are based on the orientation of the elements shown in the drawings unless otherwise specified.
FIG. 1 is a longitudinal cross-sectional view of an embodiment of the present invention;
FIG. 2 is a cross-sectional view of the metal layer of FIG. 1;
FIG. 3 is a longitudinal cross-sectional view of another embodiment of the present invention;
FIG. 4 is a cross-sectional view of the metal layer of FIG. 3;
FIG. 5 is a longitudinal cross-sectional view of another embodiment of the present invention;
fig. 6 is a cross-sectional view of the additional functional unit of fig. 5.
Reference numerals:
100 first skin 200 second skin 300 Metal layer
310 first via 400 additional functional unit 410 ceramic dielectric layer
420 additional functional layer 430 second via
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention; the technical features designed in the different embodiments of the invention described below can be combined with each other as long as they do not conflict with each other; all other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be noted that all terms used in the present invention (including technical terms and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which the present invention belongs and are not to be construed as limiting the present invention; it will be further understood that terms used herein should be interpreted as having a meaning that is consistent with their meaning in the context of this specification and the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
The invention provides an electrostatic chuck ceramic functional layer, which comprises
A first skin 100 having opposite upper and lower surfaces;
a second skin 200 disposed on the upper surface of the first skin 100;
a metal layer 300 disposed between the first surface layer 100 and the second surface layer 200;
wherein, any one layer of the first surface layer 100 and the second surface layer 200 is a sintered ceramic plate, and the other layer is a ceramic film layer; a ceramic film layer is deposited on the sintered ceramic plate.
In practice, as shown in fig. 1 to 4, the electrostatic chuck ceramic functional layer includes a first surface layer 100, a second surface layer 200, and a metal layer 300. The first skin 100 has an opposite upper surface and lower surface; the second skin 200 is disposed on the upper surface of the first skin 100; the metal layer 300 is disposed between the first skin layer 100 and the second skin layer 200.
Wherein, any one layer of the first surface layer 100 and the second surface layer 200 is a sintered ceramic plate, and the other layer is a ceramic film layer; a ceramic film layer is deposited on the sintered ceramic plate. Specifically, the metal layer 300 functions as a conductor electrode and/or a heating electrode, and the first surface layer 100 and the second surface layer 200 function as dielectrics.
In the actual production and use process, the mode of combining the sintering ceramic plate and the ceramic film is adopted, so that the ceramic functional layer of the electrostatic chuck can be processed independently, and then the ceramic functional layer is assembled subsequently, and the production efficiency is effectively improved. Meanwhile, the sintered ceramic plate has excellent physical strength performance, and the structure of combining the sintered ceramic plate and the ceramic membrane is adopted, so that the ceramic functional layer of the electrostatic chuck has high overall physical strength and higher stability and durability in the production and use processes. The ceramic membrane layer effectively simplifies the production difficulty of the ceramic functional layer of the electrostatic chuck, a double-layer ceramic co-firing mode is not needed, the production efficiency of the ceramic functional layer of the electrostatic chuck with large size is improved, and meanwhile, the problem of scrapping caused by cracks in the sintering process can be avoided. And moreover, the structure that the sintering ceramic plate is combined with the ceramic membrane is adopted, the later co-sintering is not needed, and the limit on the whole material is greatly reduced, so that different ceramic materials which can be adopted by the sintering ceramic plate and the ceramic membrane can be used for more accurately adjusting various parameters of the ceramic functional layer of the electrostatic chuck, and the performance is more controllable.
Specifically, when the first skin 100 is a sintered ceramic plate, the second skin 200 is a ceramic film, and the second skin 200 is deposited on the upper surface of the first skin 100. When the second surface layer 200 is a sintered ceramic plate, the first surface layer 100 is a ceramic film layer, and the first surface layer 100 is deposited on the lower surface of the second surface layer 200, ensuring that the second surface layer 200 is positioned on the upper surface of the first surface layer 100.
In one embodiment, the first surface layer 100 is provided with a first through hole 310 penetrating through the thickness direction of the first surface layer 100, and the metal layer 300 is electrically connected to the outside through the first through hole 310. In particular, as shown in fig. 1 to 4, the metal layer 300 penetrates through the first surface layer 100 through the first through hole 310, so that the metal layer 300 can be connected with an external positive electrode and/or an external negative electrode, thereby realizing electrostatic attraction to the wafer.
Further, the metal layer 300 may be disposed on the dual metal layer 300 or the single metal layer 300. As shown in fig. 2, the bimetal layer 300 is arranged in a manner of adopting separated double electrodes, and the double electrodes are respectively connected with the outside, and generate Coulomb force after being electrified, so that the product is adsorbed. The single metal layer 300 is arranged in a manner shown in fig. 4, and only a single electrode is arranged, so that a J-R effect is generated after the power is on, and the adsorption of a product is realized. In practical use, the circuit print pattern of the specific metal layer 300 can be adjusted by those skilled in the art according to the actual use, and is not particularly limited.
Further, the metal layer 300 may be used as a heating layer by adjusting a specific circuit printing pattern in addition to an electrode, and a person skilled in the art may select a proper function and printing pattern according to need.
In one embodiment, the sintered ceramic plate is provided with a receiving cavity, and the metal layer 300 is disposed in the receiving cavity. Specifically, the accommodating cavity is preset on the sintered ceramic plate, so that the metal layer 300 is printed more accurately.
In one embodiment, as shown in fig. 5 and 6, the electrostatic chuck ceramic functional layer further includes an additional functional unit 400, the additional functional unit 400 includes a ceramic dielectric layer 410 and an additional functional layer 420, and the ceramic dielectric layer 410 is disposed between the first surface layer 100 and the metal layer 300; the additional functional layer 420 is disposed on a side of the ceramic dielectric layer 410 remote from the metal layer 300. Specifically, the additional functional unit 400 is disposed at a side close to the first skin layer 100, so that the adsorption force of the metal layer 300 to the product is not affected.
In one embodiment, as shown in fig. 5 and 6, the first via 310 penetrates the ceramic dielectric layer 410; the additional functional layer 420 is electrically connected to the outside through the second via 430; the second through hole 430 penetrates the first skin 100. I.e., the first via 310 avoids the area of the additional functional layer 420 while penetrating the additional functional unit 400. Specifically, the additional functional layer 420 is electrically connected to the outside through the second through hole 430, so that the start and stop of the additional functional layer 420 can be controlled independently, and the safety and the operability are improved.
In one embodiment, the additional functional units 400 are arranged in at least 1 group. Specifically, the additional function units 400 may be provided in a plurality of groups according to actual needs, and those skilled in the art may adjust the additional function units according to needs, without being limited thereto. Preferably, a plurality of groups of additional functional units 400 are provided, so that the additional functional layers 420 of different groups correspond to different positions of the ceramic functional layer of the electrostatic chuck, thereby realizing regional heating, improving the adjustment capability and enabling the ceramic functional layer of the electrostatic chuck to have stronger adaptability.
In one embodiment, ceramic dielectric layer 410 is a ceramic film and additional functional layer 420 is a metal circuit. Specifically, the ceramic film is made of any one of aluminum oxide, aluminum nitride, silicon carbide and silicon nitride, and is arranged on the first surface in a conventional deposition mode. The metal circuit of the additional functional layer 420 may be a direct current heating resistance wire, and a person skilled in the art may set a printed pattern of the metal circuit according to actual needs without specific limitation.
In one embodimentWherein the resistivity of the second surface layer 200 is greater than 1 x 10 8 Ω·m。
In one embodiment, the material of the sintered ceramic plate is any one of alumina or aluminum nitride; the ceramic film layer is made of any one of aluminum oxide, aluminum nitride, silicon carbide and silicon nitride.
Preferably, the ceramic membrane and the ceramic membrane layer can be made of the same or different materials, and can be selected by a person skilled in the art according to requirements.
In one embodiment, the material of the metal layer 300 is any one of tungsten, titanium, copper, molybdenum, gold, silver, or platinum.
The invention also provides an electrostatic chuck which adopts the ceramic functional layer of the electrostatic chuck.
In one embodiment, the electrostatic chuck comprises an electrostatic chuck ceramic functional layer, an adhesive layer and a substrate; the electrostatic chuck ceramic functional layer is fixed on the substrate by an adhesive layer. Specifically, the form of the ceramic functional layer, the bonding layer and the substrate of the electrostatic chuck is adopted, so that the overall production efficiency of the electrostatic chuck can be effectively improved, and batch production can be carried out.
In one embodiment, a ceramic layer is further disposed between the substrate and the bonding layer, and the ceramic layer is made of anodized aluminum or aluminum oxide. The ceramic layer can further strengthen the electrostatic breakdown resistance of the electrostatic chuck.
In addition, it should be understood by those skilled in the art that although many problems exist in the prior art, each embodiment or technical solution of the present invention may be modified in only one or several respects, without having to solve all technical problems listed in the prior art or the background art at the same time. Those skilled in the art will understand that nothing in one claim should be taken as a limitation on that claim.
Although terms such as first skin layer, second skin layer, metal layer, etc. are more used herein, the possibility of using other terms is not excluded. These terms are used merely for convenience in describing and explaining the nature of the invention; they are to be interpreted as any additional limitation that is not inconsistent with the spirit of the present invention; the terms first, second and the like in the description and in the claims of embodiments of the invention and in the above-described figures, if any, are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.
Claims (10)
1. An electrostatic chuck ceramic functional layer, characterized in that: comprising
A first surface layer having opposite upper and lower surfaces;
a second skin layer disposed on an upper surface of the first skin layer;
the metal layer is arranged between the first surface layer and the second surface layer;
wherein, any one layer of the first surface layer and the second surface layer is a sintered ceramic plate, and the other layer is a ceramic film layer; the ceramic film layer is deposited on the sintered ceramic plate.
2. The electrostatic chuck ceramic functional layer of claim 1, wherein: the first surface layer is provided with a first through hole penetrating through the thickness direction of the first surface layer, and the metal layer is electrically connected with the outside through the first through hole.
3. The electrostatic chuck ceramic functional layer of claim 1, wherein: the multifunctional electronic device further comprises an additional functional unit, wherein the additional functional unit comprises a ceramic dielectric layer and an additional functional layer, and the ceramic dielectric layer is arranged between the first surface layer and the metal layer; the additional functional layer is arranged on one side of the ceramic dielectric layer away from the metal layer.
4. An electrostatic chuck ceramic functional layer according to claim 3, wherein: the first through hole penetrates through the ceramic dielectric layer; the additional functional layer is electrically connected with the outside through a second through hole; the second through hole penetrates through the first surface layer.
5. An electrostatic chuck ceramic functional layer according to claim 3, wherein: the additional functional units are arranged in at least 1 group.
6. The electrostatic chuck ceramic functional layer of claim 4, wherein: the ceramic dielectric layer is a ceramic film, and the additional functional layer is a metal circuit.
7. The electrostatic chuck ceramic functional layer of claim 1, wherein: the resistivity of the second surface layer is more than 1 x 10 8 Ω·m。
8. The electrostatic chuck ceramic functional layer of claim 1, wherein: the material of the sintering ceramic plate is any one of aluminum oxide, aluminum nitride, silicon carbide and silicon nitride; the ceramic membrane layer is made of any one of aluminum oxide, aluminum nitride, silicon carbide and silicon nitride.
9. The electrostatic chuck ceramic functional layer of claim 1, wherein: the metal layer is made of any one of tungsten, titanium, copper, molybdenum, gold, silver or platinum.
10. An electrostatic chuck, characterized in that: use of an electrostatic chuck ceramic functional layer according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310737396.7A CN116741695A (en) | 2023-06-20 | 2023-06-20 | Electrostatic chuck ceramic functional layer and electrostatic chuck |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310737396.7A CN116741695A (en) | 2023-06-20 | 2023-06-20 | Electrostatic chuck ceramic functional layer and electrostatic chuck |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116741695A true CN116741695A (en) | 2023-09-12 |
Family
ID=87911249
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310737396.7A Pending CN116741695A (en) | 2023-06-20 | 2023-06-20 | Electrostatic chuck ceramic functional layer and electrostatic chuck |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116741695A (en) |
-
2023
- 2023-06-20 CN CN202310737396.7A patent/CN116741695A/en active Pending
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