CN116736599B - Phased array element, two-dimensional optical phased array and optical phased array system - Google Patents
Phased array element, two-dimensional optical phased array and optical phased array system Download PDFInfo
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
- G02F1/292—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection by controlled diffraction or phased-array beam steering
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0147—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on thermo-optic effects
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
- G02F1/0151—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction modulating the refractive index
- G02F1/0152—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction modulating the refractive index using free carrier effects, e.g. plasma effect
Abstract
The invention relates to the technical field of optical communication, and particularly discloses a phased array element, a two-dimensional optical phased array and an optical phased array system, which comprise the following components: the thermo-optical modulation assembly, the electro-optical modulation assembly and the light-out coupling assembly are sequentially arranged along the light transmission direction; the thermo-optical modulation component can change the equivalent optical path of the passed input light under the action of a first electric signal through the thermo-optical effect to obtain first output light, and the first output light has a first phase and a first amplitude; the electro-optical modulation component can change the equivalent optical path of the passed first output light under the action of a second electric signal through an electro-optical effect to obtain second output light, and the second output light has a second phase and a second amplitude; the light-out coupling component can be used for coupling the second output light to obtain final light-out, and the final light-out is emitted to the free space along the preset light-out direction. The phased array element, the two-dimensional optical phased array and the optical phased array system provided by the invention can flexibly regulate and control two-dimensional wave beams.
Description
Technical Field
The invention relates to the technical field of optical communication, in particular to a phased array element, a two-dimensional optical phased array and an optical phased array system.
Background
The optical phased array (Optical Phased Array, OPA for short) technology is the same as the microwave phased array principle, and is an extension of the microwave to light field. Unlike microwave as information carrier, the optical phased array has obvious advantages and can avoid interference of radio wave; due to the characteristics of laser, the beam is narrow, the confidentiality is high, and the detection is not easy. The optical phased array has the advantages of small volume, light weight, accurate light beam direction, high resolution and the like, and has great application prospect in the optical fields of free space optical communication, optical storage, laser radar and the like.
Although the principle of the optical phased array is the same as that of the microwave phased array, the implementation mode of the microwave phased array cannot be directly applied to the optical phased array technology, so that a plurality of technical barriers which cannot be broken through still exist in the current technical implementation of the optical phased array. For example, existing optical phased arrays often employ one-dimensional arrays, which make it difficult to achieve two-dimensional beam steering. Even if two-dimensional beam regulation can be realized, the beam regulation mode is single and is not flexible enough.
Therefore, how to provide a flexible two-dimensional beam modulation method is a technical problem to be solved by those skilled in the art.
Disclosure of Invention
The invention provides a phased array element, a two-dimensional optical phased array and an optical phased array system, which solve the problem of single two-dimensional beam regulation and control mode in the related technology.
As a first aspect of the present invention, there is provided a phased array element comprising:
the device comprises a thermo-optical modulation assembly, an electro-optical modulation assembly and an out-coupling assembly, wherein the thermo-optical modulation assembly, the electro-optical modulation assembly and the out-coupling assembly are sequentially arranged along the transmission direction of light, the thermo-optical modulation assembly is connected with the electro-optical modulation assembly through a first optical transmission medium, and the electro-optical modulation assembly is connected with the out-coupling assembly through a second optical transmission medium;
the thermo-optical modulation component can change the equivalent optical path of the passed input light under the action of a first electric signal through the thermo-optical effect to obtain first output light, and the first output light has a first phase and a first amplitude;
the electro-optical modulation component can change the equivalent optical path of the passed first output light under the action of a second electric signal through an electro-optical effect to obtain second output light, and the second output light has a second phase and a second amplitude;
the light-out coupling component can be used for coupling the second output light to obtain final light-out, and the final light-out is emitted to a free space along a preset light-out direction.
Further, the thermo-optic modulation assembly comprises a heat source part and first conductive parts arranged at two ends of the heat source part,
the first conductive part is used for connecting a first electrode, and the first electrode is used for accessing a first electric signal;
the heat source portion is capable of generating heat by the first electric signal to obtain a changing refractive index capable of changing an equivalent optical path of the input light passing therethrough.
Further, the electro-optical modulation component comprises a PN junction structure and second conductive parts arranged at two sides of the PN junction structure,
the second conductive part is used for connecting a second electrode, and the second electrode is used for accessing a second electric signal;
when a forward bias is applied to the PN junction structure through the second electrode, the PN junction structure forms an injection type modulator capable of changing the amplitude of the first output light under the action of the second electric signal;
when a reverse bias is applied to the PN junction structure through the second electrode, the PN junction structure forms a depletion modulator capable of changing the phase of the first output light under the action of the second electrical signal.
Further, the method further comprises the following steps:
The detector component is connected with the electro-optical modulation component through a third optical transmission medium and is used for detecting the light intensity of the second output light output by the electro-optical modulation component.
Further, an isolation groove is arranged between the thermo-optical modulation assembly and the electro-optical modulation assembly, and the length of the isolation groove is not smaller than that of the thermo-optical modulation assembly.
Further, the out-coupling assembly includes a coupling grating.
As another aspect of the present invention, there is provided a two-dimensional optical phased array, including an input coupling device and a phase control device, which are coupled in sequence along a light transmission direction, where the input coupling device is configured to form input light according to a light source, and the phase control device includes a plurality of phased array elements as described above, and the plurality of phased array elements are arranged in a preset manner, and final light output of all the phased array elements interfere with each other to form an light output beam of the two-dimensional optical phased array.
Further, the phase control device is divided into a first phased array element area and a second phased array element area, the second phased array element area is arranged around the first phased array element area, the electro-optical modulation component of each phased array element in the first phased array element area comprises a depletion modulator, the electro-optical modulation component of each phased array element in the second phased array element area comprises an injection modulator, and all phased array elements in the first phased array element area and the second phased array element area are uniformly arranged at intervals.
Further, the phase control device is divided into a first phased array element area and a second phased array element area, the second phased array element area is arranged around the first phased array element area, the electro-optical modulation component of each phased array element in the first phased array element area comprises a depletion modulator, the electro-optical modulation component of each phased array element in the second phased array element area comprises an injection modulator, and all phased array elements in the first phased array element area and the second phased array element area are arranged at non-uniform intervals according to a preset arrangement rule.
As another aspect of the present invention, there is provided an optical phased array system, including: the laser and the two-dimensional optical phased array are coupled and connected, and the laser is used for providing a light source.
According to the phased array element, the two-dimensional optical phased array and the optical phased array system, each phased array element in the two-dimensional optical phased array adopts the regulation and control mode of combining the thermo-optical modulation component and the electro-optical modulation component, so that the beam regulation and control required by the phase can be met, the beam regulation and control required by the amplitude can be met, and meanwhile, the angle range of the beam regulation and control is wider, and therefore, when the phased array element is applied to the optical phased array system, the phased array element has the advantage of flexible regulation and control under the condition of realizing two-dimensional beam regulation and control, and the beam regulation and control requirements under different application scenes can be met.
Drawings
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate the invention and together with the description serve to explain, without limitation, the invention.
Fig. 1 is a block diagram of an optical phased array system according to the present invention.
Fig. 2 is a block diagram of a two-dimensional optical phased array according to the present invention.
Fig. 3 is a block diagram of a phased array element according to the present invention.
Fig. 4 is a schematic diagram of a specific structure of a phased array element according to the present invention.
Fig. 5 is a cross-sectional view of a coupling grating formed on a silicon surface according to the present invention.
Fig. 6a is a schematic diagram of an 8×8 uniform rectangular array lattice arrangement provided in the present invention.
Fig. 6b is a schematic diagram of actual arrangement of the phased array elements corresponding to fig. 6 a.
Fig. 7a is a 3D simulation of the beam light field distribution corresponding to fig. 6 a.
Fig. 7b is a cross-sectional view of fig. 7a along a horizontal direction.
Fig. 7c is a cut-away view of fig. 7a along a vertical direction.
Fig. 7d is a schematic diagram of the beam deflection angle obtained after phase adjustment.
Fig. 8a is a schematic diagram of a circular planar lattice arrangement with rectangular grids according to the present invention.
Fig. 8b is a schematic diagram of the actual arrangement of the phased array elements corresponding to fig. 8 a.
Fig. 9a is a 3D simulation of the beam light field distribution corresponding to fig. 8 a.
Fig. 9b is a cross-sectional view of fig. 9a along the horizontal direction.
Fig. 9c is a cut-away view of fig. 9a in a vertical direction.
Fig. 10a is a schematic diagram of a circular planar lattice arrangement with triangular meshes according to the present invention.
Fig. 10b is a schematic diagram of the actual arrangement of the phased array elements corresponding to fig. 10 a.
Fig. 11a is a 3D simulation of the beam light field distribution corresponding to fig. 10 a.
Fig. 11b is a sectional view of fig. 11a along the horizontal direction.
Fig. 11c is a cut-away view of fig. 11a along the vertical direction.
Fig. 12a is a schematic diagram of a uniform hexagonal lattice arrangement according to the present invention.
Fig. 12b is a schematic diagram of the actual arrangement of the phased array elements corresponding to fig. 12 a.
Fig. 13a is a 3D simulation of the beam light field distribution corresponding to fig. 12 a.
Fig. 13b is a cut-away view of fig. 13a along the horizontal direction.
Fig. 13c is a cut-away view of fig. 13a in a vertical direction.
Detailed Description
It should be noted that, without conflict, the embodiments of the present invention and features of the embodiments may be combined with each other. The invention will be described in detail below with reference to the drawings in connection with embodiments.
In order that those skilled in the art will better understand the present invention, a technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present invention and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate in order to describe the embodiments of the invention herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
Currently, as research of an optical phased array is focused on a one-dimensional array, research is relatively few for reasons that two-dimensional beam modulation is limited by technology and the like. The existing two-dimensional beam regulation and control is concentrated on a single regulation and control mode, and obviously cannot meet the requirements of technical progress.
In view of the above, the invention provides a phased array element, a two-dimensional optical phased array and an optical phased array system so as to realize two-dimensional beam regulation and control, and the two-dimensional beam regulation and control mode is flexible, so that the requirements of different application scenes are met.
For ease of understanding, the overall description of the two-dimensional beam steering application system will be described first.
As an embodiment of the present invention, there is provided an optical phased array system, fig. 1 is a block diagram of an optical phased array system 10, as shown in fig. 1, including: the laser 100 and the two-dimensional optical phased array 200, the laser 100 is coupled with the two-dimensional optical phased array 200, the laser 100 is used for providing a light source, and the two-dimensional optical phased array 200 can adopt an example structure described below.
Specifically, the laser 100 is capable of emitting a light source, and in the embodiment of the present invention, the type of the specific laser is not particularly limited, and for example, a monochromatic laser may be used.
The light source emitted by the laser 100 can be coupled into the two-dimensional optical phased array 200, the two-dimensional optical phased array 200 can be respectively enter each phased array element after light splitting coupling, namely, multiple paths of light can be obtained through light splitting coupling, each path of light can pass through one phased array element, the change of the self refractive index can be caused through a thermal light modulation component and an electro-optical modulation component in the phased array element, so that the change of the phase and the amplitude of the light is caused, and finally, the light is emitted to a free space through an light-emitting and coupling component. The two-dimensional optical phased array formed by the plurality of phased array elements in a specific arrangement mode can form an emergent light beam after the final emergent light is interfered with each other. The light emitting direction of the light emitting beam is specifically related to the final light emitting phase of each phased array element, and the intensity of the main lobe and the intensity of the side lobe of the specific light emitting beam are related to the modulation of the thermo-optical modulation component and the electro-optical modulation component of each phased array element.
When the thermo-optical modulation component is combined with the depletion type electro-optical modulator, the final light-emitting beam can realize large-angle light emission; when the thermo-optical modulation component is combined with the injection type electro-optical modulator, the light emitting in the main lobe direction can be increased, the light emitting in other directions can be reduced, namely, the sidelobe suppression ratio can be improved, so that the signals of the sidelobes are suppressed, and meanwhile, the signals corresponding to the main lobe direction are stronger than the signals corresponding to the sidelobes.
Therefore, in the optical phased array system provided by the embodiment of the invention, each phased array element in the two-dimensional optical phased array adopts a regulation mode of combining the thermo-optical modulation component and the electro-optical modulation component, so that the beam regulation and control required by the phase can be met, the beam regulation and control required by the amplitude can be met, and meanwhile, the angle range of the beam regulation and control is wider, so that when the phased array element is applied to the optical phased array system provided by the invention, the advantage of flexible regulation and control is realized under the condition of realizing the two-dimensional beam regulation and control, and the beam regulation and control requirements under different application scenes can be met.
As an embodiment of the two-dimensional optical phased array 200 of the present invention, as shown in fig. 2, a specific structure may include an input coupling device 210 and a phase control device 220 that are coupled in sequence along a light transmission direction, where the input coupling device 210 is configured to form input light according to a light source, and the phase control device 220 includes a plurality of phased array elements, where the plurality of phased array elements are arranged in a preset manner, and final light output of all the phased array elements interfere with each other to form a light output beam of the two-dimensional optical phased array.
In an embodiment of the present invention, the input coupling device 210 may specifically include an optical input coupling device 211 and an optical beam-splitting coupling device 212. The light source emitted by the laser is transmitted through the optical fiber, and at the connection port with the optical fiber, the optical input coupling device 211 couples the light in the optical fiber into the chip where the two-dimensional optical phased array is located, and then is coupled into a plurality of phased array elements through the optical beam splitting coupling device 212.
In the embodiment of the invention, the two-dimensional optical phased array is realized based on a silicon-based integrated circuit, namely, the two-dimensional optical phased array is realized in a silicon-based chip mode, an input port is arranged on the silicon-based chip, a light source emitted by a laser is transmitted to the input port through an optical fiber, and an optical input coupling device couples light in the optical fiber into the chip.
It should be understood that the silicon-based chip for implementing the two-dimensional optical phased array in the present invention specifically uses a silicon waveguide as an optical transmission medium. Thus, the optical input coupling device 211 and the optical splitting coupling device 212 in the present invention may be implemented as silicon waveguides.
It is noted here that the light input coupling device 211 and the light splitting coupling device 212 are not limited to the above-described implementation, but may be implemented by grating coupling.
In an embodiment of the present invention, the phase controller 220 may specifically include a plurality of phased array elements 300, where the plurality of phased array elements 300 may be arranged in different directions to form different two-dimensional phased arrays. Different light emitting effects can be achieved through different two-dimensional phased arrays, so that the two-dimensional optical phased array provided by the embodiment of the invention can meet the beam regulation and control requirements of various different application scenes based on different regulation and control mode combinations of a single phased array element and different two-dimensional phased arrays formed by different arrangements of a plurality of phased array elements.
As a specific example of a phased array element, as shown in fig. 3, a phased array element 300 includes:
the thermo-optical modulation assembly 310, the electro-optical modulation assembly 320 and the light-out coupling assembly 330 are sequentially arranged along the transmission direction of light, the thermo-optical modulation assembly 310 and the electro-optical modulation assembly 320 are connected through a first optical transmission medium 340, and the electro-optical modulation assembly 320 and the light-out coupling assembly 330 are connected through a second optical transmission medium 350;
the thermo-optic modulation component 310 can change the equivalent optical path of the passing input light under the action of a first electric signal by using a thermo-optic effect to obtain a first output light, wherein the first output light has a first phase and a first amplitude;
The electro-optical modulation component 320 can change the equivalent optical path of the first output light passing through by the electro-optical effect under the action of a second electric signal to obtain a second output light, wherein the second output light has a second phase and a second amplitude;
the light-out coupling component 330 can couple the second output light to obtain a final light-out, and transmit the final light-out to a free space along a preset light-out direction.
In the embodiment of the present invention, when the input light coupled in by the light splitting coupling device 212 is coupled to the thermo-optical modulating component 310, the thermo-optical modulating component 310 can change the refractive index of the transmission medium by using the thermo-optical effect, so as to further realize the phase control of the input light, and obtain the first output light after the modulation of the thermo-optical modulating component 310. The first output light has a first phase and a first amplitude due to the modulation action of the thermo-optic modulation component 310.
Specifically, as shown in fig. 4, the thermo-optic modulation element 310 includes a heat source portion 311 and first conductive portions 312 provided at both ends of the heat source portion 311,
the first conductive part 312 is used for connecting a first electrode, and the first electrode is connected with or introduces a first electric signal;
the heat source portion 311 is capable of generating heat by the first electric signal to obtain a changing refractive index capable of changing an equivalent optical path of the input light passing therethrough.
The two-dimensional optical phased array in the embodiment of the invention can be realized in the form of a silicon-based chip. Specifically, on a silicon-based chip, light is transmitted using a silicon waveguide as a transmission medium. The thermo-optic modulation element 310 is heated when receiving an electrical signal, and changes the thermal motion of the silicon atoms when the temperature changes, so as to change the crystal structure, thereby changing the refractive index of the silicon waveguide, and accordingly changing the phase of the light passing through the silicon waveguide.
Therefore, the refractive index of the silicon waveguide can be controlled by electrically heating the silicon waveguide to control the temperature of the silicon waveguide, so that the phase control of light is realized.
The manner in which the thermo-optic modulation module 310 performs the temperature control of the silicon waveguide in the embodiment of the present invention is to perform doping on the basis of the current silicon waveguide to form the heat source portion, for example, to perform medium-concentration p+ doping on the silicon waveguide to form the heat source portion 311, which can be regarded as a heat source after power-on due to the high resistance of the silicon waveguide after p+ doping. The heat source portion 311 is doped with p++ at a high concentration at both ends thereof to form a first conductive portion 312, that is, the first conductive portion 312 is in ohmic contact with the first electrode, thereby realizing current conduction.
The mode of realizing the temperature control of the silicon waveguide is to utilize the silicon waveguide to dope P+ and then electrify, thereby leading to higher resistance, and thus the mode of generating high heat is controlled. Of course, other ways of controlling the waveguide temperature are also possible, for example, by placing a thermal resistor near the silicon waveguide, and controlling the waveguide temperature by controlling the power of the thermal resistor. In the actual process, a specific thermal control mode can be selected according to the needs, and the invention is not limited.
In the embodiment of the present invention, the thermo-optic modulation component 310 is obtained by doping a silicon material, and the silicon material has a higher thermo-optic coefficient, so that the thermo-optic modulation component 310 is more sensitive to the modulation of light after absorbing heat, specifically, the change relation between the refractive index of the accessory and the temperature at the wavelength of 1.55 μm can be expressed as follows:
where Δφ represents the amount of phase change, ΔT represents the amount of waveguide temperature change, and L represents the waveguide length in the thermo-optic modulation assembly.
The shape of the silicon waveguide in the thermo-optical modulator 310 is not limited, and may be a curved waveguide or a linear waveguide. Wherein bending the waveguide enables the length of the waveguide to be increased so that the phase of the modulation will also be greater.
It should be appreciated that since the modulation rate of the thermo-optic modulation assembly 310 is dependent on the rate of the silicon waveguide heating or cooling process, and the devices on the silicon-based chip are relatively small, the heating and heat dissipation is also relatively fast, on the order of milliseconds. In addition, the thermo-optical modulator 310 is heavily doped only in the conductive portion and is doped with medium concentration in the heat source portion, so that the optical power loss is relatively low.
It should be noted that the specific doping concentration of the medium concentration doping (p+, n+) in the embodiment of the present invention is 10 19 /cm 3 The magnitude, the specific doping concentration of the heavy concentration doping (P++, N++) is 10 20 /cm 3 In order of magnitude, the specific doping concentration of the low-concentration doping (P, N) is 10 17 /cm 3 Magnitude.
In an embodiment of the present invention, the first output light obtained after modulation by the thermo-optic modulation component 310 is coupled to the electro-optic modulation component 320 through the first optical transmission medium 340.
Specifically, as shown in fig. 4, the electro-optical modulation assembly 320 includes a PN junction structure 321 and second conductive portions 322 disposed at both sides of the PN junction structure 321,
the second conductive part 322 is used for connecting a second electrode, and the second electrode is used for accessing or introducing a second electric signal;
when a forward bias is applied to the PN junction structure 321 through the second electrode, the PN junction structure 321 forms an injection-type modulator capable of changing the amplitude of the first output light under the action of the second electrical signal;
When a reverse bias is applied to the PN junction structure 321 through the second electrode, the PN junction structure 321 forms a depletion modulator capable of changing the phase of the first output light under the action of the second electrical signal.
It should be understood that, in the electro-optical modulation component 320 according to the embodiment of the present invention, a PN junction structure is formed by performing low-concentration P and N doping on a silicon waveguide by using a plasma dispersion effect, and a second conductive portion 322 is formed by performing heavy-concentration p++ and n++ doping on regions on both sides of the silicon waveguide, where the second conductive portion 322 is in ohmic contact with the second electrode. In actual operation, the mode of operation of the electro-optic modulation assembly 320 may be changed by changing the direction of pressurization of the second electrode. And the concentration of carriers in the PN junction structure can be changed by changing the voltage in a single pressurizing direction, so that the refractive index of the silicon waveguide is changed accordingly.
Specifically, in the actual regulation process, the refractive index Δn and the absorption coefficient Δα of the silicon material may change with the change of the concentration of carriers in the silicon material:
wherein e represents the charge amount, λ represents the wavelength of light, c represents the speed of light, ε 0 Represents the dielectric constant, N represents the refractive index of silicon, ΔN e Indicating the concentration change of electrons, deltaN h Indicating the change in concentration of the holes,representing the effective mass of electrons, < >>Represents the effective mass of the cavity, mu e Represents electron mobility, μ h Indicating hole mobility.
Here, the representation of the physical quantity of the refractive index is actually a complex number, that is, includes two parts of a real part (Δn) and an imaginary part (Δα), the real part is a refractive index generally understood, and the imaginary part actually represents absorption, so that the imaginary part is collectively referred to as an absorption coefficient and the real part is referred to as a refractive index in the embodiment of the present invention.
The effective refractive index of the whole waveguide section can be obtained by performing surface integration on the refractive index corresponding to the carrier concentration of each point in the whole waveguide section. By varying the voltage of the modulating signal, the concentration of electrons and holes injected into the waveguide is varied.
The depletion modulator changes the refractive index of the waveguide based on the above formula (1), thereby changing the phase of the light output; the injection modulator can absorb light of the edge array elements based on the formula (2) so as to achieve the effects of suppressing side lobes and improving the side lobe suppression ratio.
Specifically, when a forward bias is applied to the PN junction structure 321 through the second electrode, the carrier concentration increases, the real part (Δn) of the refractive index of the waveguide decreases, the imaginary part (Δα) increases, the phase of the corresponding light decreases, the loss increases, and thus the light intensity decreases; when a reverse bias is applied to the PN junction structure 321 through the second electrode, the carrier concentration is reduced, the real part (Δn) of the refractive index of the waveguide is increased, the imaginary part (Δα) is reduced, the phase of the light is correspondingly increased, the loss is reduced, and therefore, the light intensity is increased, and the modulation rate under the reverse bias is far greater than that under the forward bias.
Therefore, when a forward bias is applied to the PN junction structure through the second electrode, the depletion region of the PN junction structure is reduced, the carrier concentration in the silicon waveguide region is increased, and the light intensity in the silicon waveguide region can be reduced; when reverse bias is applied to the PN junction structure through the second electrode, the depletion region of the PN junction structure is increased, the carrier concentration in the silicon waveguide region is reduced, and the effective refractive index of the corresponding silicon waveguide is increased.
Thus, different combinations can be selected according to different application scenarios. When the two-dimensional optical phased array needs a larger angle detection range, the combination of the depletion type modulator and the thermo-optical modulation component can be adopted, so that the deflection range of light beams can be enlarged, and the combination of the depletion type modulator and the thermo-optical modulation component can not increase the light absorption, so that higher light-emitting intensity can be obtained; when the two-dimensional optical phased array needs to increase the light output of the main lobe direction of the light beam and reduce the light output of other directions, the side lobe of the light beam can be restrained through the combination mode of the injection modulator and the thermo-optical modulation assembly, the side lobe restraining ratio is improved, and the signal quality of the main lobe corresponding direction is also improved. In contrast, in the injection modulator, since the intensity of the side lobe is reduced mainly by utilizing the characteristic of the injection modulator that can increase the absorption of light, the refractive index change (mainly referred to herein as the real part change) generated at the time of modulation can be compensated by the thermo-optical modulation element.
Of course, in the two-dimensional optical phased array formed by the phased array elements, the combination of the phased array elements with the depletion modulator and the phased array elements with the injection modulator can be adopted, namely, the deflection range of the light beam is increased in a mode of arranging the depletion modulator and the thermo-optical modulation component in the central area, and the light absorption of the edge is improved in a mode of arranging the injection modulator and the thermo-optical modulation component in the peripheral area.
Therefore, when the phased array element provided by the invention is applied to the two-dimensional optical phased array, different application scenes can be met through different combination forms, so that different light emitting effects can be obtained. In addition, the phased array element in the embodiment of the invention changes the equivalent optical path through which light passes after performing thermo-optical modulation and electro-optical modulation before exiting the optical coupling assembly, and finally emits final exiting light through the optical coupling assembly, so that a more stable exiting light effect can be obtained compared with other forms.
In order to obtain a more accurate light emitting direction and achieve an accurate electro-optical modulation effect, as shown in fig. 4, the phased array element may further include:
and a detector assembly 360 connected to the electro-optical modulation assembly 320 via a third optical transmission medium 370, wherein the detector assembly 360 is configured to detect the light intensity of the second output light output by the electro-optical modulation assembly 320.
It should be understood that, by monitoring the light intensity of the second output light in real time through the detector component 360, the light intensity can be fed back to the electro-optical modulation control unit, and the electro-optical modulation control unit is used for controlling the direction and the magnitude of the applied voltage of the second electrode of the electro-optical modulation component, so that the real-time light intensity can be compared with the preset required light intensity value when the electro-optical modulation control unit receives the light intensity, and the direction and the magnitude of the applied voltage of the electro-optical modulation component can be adjusted in time. For example, if the current detected light intensity is higher than the preset required light intensity value, the absorption rate is increased by changing the voltage applied by the injection modulator so as to reduce the light intensity value; otherwise, if the current detected light intensity is smaller than the preset required light intensity value, the absorption rate is reduced by changing the applied voltage of the injection modulator so as to increase the light intensity value.
The detector assembly 360 in embodiments of the present invention may specifically include a photodetector, and further, the photodetector may specifically be a silicon germanium detector.
The specific principle of operation of the photodetector in detecting light intensity is understood to be that when the second output light propagates in the second transmission medium 350, a proportion (for example, 1% proportion) of light is coupled into the third transmission medium 370 by indirect coupling between the third transmission medium 370 and the second transmission medium 350, and then the proportion of light enters the photodetector, and the photodetector converts the optical signal into an electrical signal by using the photoelectric effect. At this time, the photoelectric detector feeds back the electric signal to the electro-optical modulation control unit, and after receiving the electric signal, the electro-optical modulation control unit can obtain the intensity of the light in the third transmission medium 370 through the magnitude of the electric signal, and further can know the intensity of the second output light in the second transmission medium 350 through scaling, so that the electro-optical modulation control unit can perform corresponding control according to the intensity of the second output light.
It should be understood that each of the first transmission medium 340, the second transmission medium 350, and the third transmission medium 370 may be a silicon waveguide, each of the first transmission medium 340 and the second transmission medium 350 may be a U-shaped waveguide or an arc-shaped waveguide, and each of the third transmission medium 370 may be a segment of a linear waveguide.
Therefore, in the embodiment of the invention, the detector assembly is added to monitor the light intensity value of the second output light, so that the light intensity value can be adjusted in time before entering the light-out coupling assembly, the final light-out meets the light-out light intensity requirement, and the accuracy of the final light-out can be improved.
In order to prevent thermal crosstalk generated by the thermo-optical modulation assembly during heating, an isolation groove 380 is disposed between the thermo-optical modulation assembly 310 and the electro-optical modulation assembly 320, and the length of the isolation groove 380 is not less than the length of the thermo-optical modulation assembly 310.
It should be understood that the isolation groove 380 may be an etched groove etched on a silicon substrate, and taking the direction shown in fig. 4 as an example, the length direction of the etched groove 380 is the up-down direction of fig. 4, and the length of the etched groove 380 is not less than the length of the thermo-optic modulating component 310, so that thermal crosstalk generated when the thermo-optic modulating component heats can be effectively avoided.
As a specific embodiment of the out-coupling assembly 330, the out-coupling assembly 330 includes a coupling grating.
In an embodiment of the present invention, the out-coupling component 330 may be implemented by using a coupling grating.
In addition, it should be noted that, in the embodiment of the present invention, the light-out coupling component 330 can couple the second output light and then send out the final light along the preset light-out direction, where the preset light-out direction can be understood as the preset light-out direction required by the phased array element, and further, the electro-optical modulation component and the thermo-optical modulation component are controlled according to the preset light-out direction to change the phase of the first output light and the phase of the second output light, so as to obtain the final light-out that meets the preset light-out direction.
Specifically, as shown in fig. 5, the coupling grating is formed by periodically deep etching and shallow etching a silicon region, so that a section of waveguide region with periodically changing refractive index is constructed, the light angle of the section of waveguide region with periodically changing refractive index can be determined, and once the coupling grating is formed, the light emitting angle is not changed, so that when the coupling grating is in a phased array element, the coupling grating can couple the second output light to form final light emitting, and the final light emitting is emitted along the light emitting angle determined by coupling of the coupling grating.
In fig. 5, the phased array element is fabricated in the uppermost Si layer. The influence factor of the emergent angle of the coupling grating light can be determined according to an emergent angle formula, wherein the emergent angle formula is expressed as follows:
wherein n is eff Representing the effective refractive index of the grating region; n is n cladding The refractive index of the cladding layer, m represents the number of cycles, λ represents the wavelength of light, and a represents the length of a single cycle; in addition, in the embodiment of the present invention, the upper layer of the grating region is a cladding layer, and in fig. 5, there is no silicon filling above the grating layer, and the cladding layer is air.
As can be seen from fig. 5 and the above emission angle formula, the refractive index of the grating, and thus the emission angle of light, is affected by the alternating duty ratio (i.e., the ratio of the depths of the deep and shallow etching) and the etching depth.
It should be understood here that, since the duty cycle of the coupling grating is determined after the coupling grating is fabricated, the fabricated coupling grating does not change the final exit angle of the light when applied to the phased array element. If the final light emitting direction needs to be adjusted, the final light emitting direction can only be realized through the control of the thermo-optical modulation assembly and the electro-optical modulation assembly, and the self-determined coupling grating structure can not be changed when being used as the light emitting coupling assembly.
In summary, the phased array element provided by the embodiment of the invention controls the phase and amplitude of light through the combination of thermo-optical modulation and electro-optical modulation so as to meet the light emitting requirement, and when a plurality of phased array elements form a two-dimensional optical phased array, the phased array element can meet the light beam regulation and control requirements in different scenes so as to meet different application scenes. In addition, the physical mechanism of the electro-optic modulation determines that the response time of the electro-optic modulation can be in the microsecond magnitude, and the response time of the thermo-optic modulation can be in the millisecond magnitude, so that the effect of improving the response speed can be achieved by combining the thermo-optic modulation with the electro-optic modulation.
For the two-dimensional optical phased array, when the phased array element is adopted to form a two-dimensional phased array layout, different beam effects can be obtained according to different layout forms.
As a specific implementation manner, the phase control device is divided into a first phased array element area and a second phased array element area, the second phased array element area is arranged around the first phased array element area, the electro-optical modulation component of each phased array element in the first phased array element area comprises a depletion modulator, the electro-optical modulation component of each phased array element in the second phased array element area comprises an injection modulator, and all phased array elements in the first phased array element area and the second phased array element area are uniformly arranged at intervals.
In combination with the schematic arrangement of the phase control devices in the two-dimensional optical matrix shown in fig. 6a and fig. 6B, fig. 6a is a schematic arrangement of an 8×8 uniform rectangular array lattice, fig. 6B is a schematic actual arrangement of an 8×8 uniform rectangular array phased array element, and as can be seen in fig. 6a, the second phased array element area B is disposed around the first phased array element area a. Each phased array element in the first phased array element region a includes a thermo-optic modulation element and a depletion-type electro-optic modulation element, while each phased array element in the second phased array element region B includes a thermo-optic modulation element and an injection-type electro-optic modulation element. Through the middle zone setting depletion type electro-optic modulation subassembly, set up injection type electro-optic modulation subassembly's overall arrangement form all around, the characteristic that the absorption of light can not be increased to the electro-optic modulation subassembly based on depletion type, therefore every phased array unit that has depletion type electro-optic modulation subassembly can both guarantee higher final light-emitting, consequently the light beam of first phased array unit region A can have stronger main lobe energy and obtain large angle deflection, and set up injection type electro-optic modulation subassembly all around can reduce the light-emitting intensity, can make this two-dimensional optical phased array finally obtain great deflection angle scope through above-mentioned structural combination, and can effectively promote the sidelobe suppression ratio.
Fig. 6b is a schematic illustration of the actual arrangement of phased array elements corresponding to fig. 6 a. After light is coupled in from the input, the light is respectively coupled into 8 paths of branch waveguides, and finally is respectively coupled into 64 phased array elements. The spacing of every adjacent two phased array elements needs to satisfy an integer multiple of the phase difference.
In this embodiment, the control for the thermo-optical modulation and the electro-optical modulation also requires a thermo-optical modulation control unit and an electro-optical modulation control unit, wherein the thermo-optical modulation control unit is connected to the first electrode and the electro-optical modulation control unit is connected to the second electrode. The thermo-optical modulation control unit controls the refractive index of the phased array element by controlling the voltage received by the first electrode, and the electro-optical modulation control unit controls the refractive index and the absorption rate of the phased array element by controlling the voltage of the second electrode and the direction of the applied voltage.
For the layout form shown in fig. 6b, if the sidelobe suppression ratio is to be improved, the thermo-optic modulation control unit sets a voltage value according to the initial phase required by the array elements, and controls the thermo-optic modulation components in all the array elements to apply the same voltage through the first electrode; and the electro-optical modulation control unit sets the applied voltage direction in the first phased array element area A and the voltage magnitude of the corresponding phased array element, and the applied voltage direction in the second phased array element area B and the voltage magnitude of the corresponding phased array element according to the light-emitting value required by the main lobe.
The phased array element in the first phased array element area A carries out thermo-optical modulation according to the voltage signal received by the first electrode, carries out corresponding electro-optical modulation according to the voltage direction of the voltage signal received by the second electrode and the voltage signal size so as to obtain stable light emission, and the phased array element in the second phased array element area B carries out thermo-optical modulation according to the voltage signal received by the first electrode, carries out corresponding electro-optical modulation according to the voltage direction received by the second electrode and the voltage signal size so as to obtain low light intensity light emission. Through the combination of the modes, the finally formed two-dimensional optical phased array has high beam main lobe energy, effectively suppresses side lobe energy and can obtain a large angle deflection range.
Fig. 7a is a 3D simulation diagram of the light field distribution of the beam corresponding to fig. 6a, fig. 7b is a section view along the horizontal direction, fig. 7c is a section view along the vertical direction, and it is obvious from fig. 7a to fig. 7c that the main lobe energy is relatively large, the side lobe energy is relatively small, the side lobe suppression ratio is improved, and the specific value of the side lobe suppression ratio is 30dB. Fig. 7d shows the deflection angle of the beam obtained by adjusting the phase, and it can be seen that the deflection angle can reach plus or minus 30 degrees, so that the beam can realize a wide range of scanning when the beam is applied in the scenes such as radar scanning.
Fig. 6b does not show the connection relation of the electrodes, and it should be noted that, regarding the electrodes, a first electrode and a second electrode may be specifically added in a row or a column, where the first electrode is an electrical signal access line of the thermal light modulation component, and the second electrode is an electrical signal access line of the electrical light modulation component. The same first electrode and/or second electrode may be used in the same row or column, or one first electrode and/or second electrode may be provided for each phased array element. The layout of the specific electrodes is not limited in the embodiment of the present invention, as long as the above electrothermal control can be achieved.
As other layout forms of uniform arrangement, as shown in fig. 8a and 8B, a circular planar array with a rectangular grid is adopted, the layout structure may still have a middle area as the first phased array element area a and a surrounding second phased array element area B, and the specific working process may be referred to the foregoing, which is not repeated herein.
Fig. 9a to 9c are 3D simulation diagrams and cut-plane diagrams of the beam light field distribution corresponding to fig. 8 a.
In addition, as shown in fig. 10a and fig. 10B, the layout structure is a circular planar array with triangular meshes, the middle area of the layout structure may still be the first phased array element area a, and the second phased array element area B is surrounded by the middle area, and the specific working process may be described in the foregoing, which is not repeated here.
Fig. 11a to 11c are 3D simulation diagrams and cut-plane diagrams of the beam light field distribution corresponding to fig. 10 a.
Fig. 12a and 12B show a uniform hexagonal array, the layout structure may still have a middle area as the first phased array element area a and a surrounding second phased array element area B, and the specific working process may be described above, which is not repeated here.
Fig. 13a to 13c are 3D simulation diagrams and cut-plane diagrams of the beam light field distribution corresponding to fig. 12 a.
As another specific implementation manner, the phase control device is divided into a first phased array element area and a second phased array element area, the second phased array element area is arranged around the first phased array element area, the electro-optical modulation component of each phased array element in the first phased array element area comprises a depletion modulator, the electro-optical modulation component of each phased array element in the second phased array element area comprises an injection modulator, and all phased array elements in the first phased array element area and the second phased array element area are arranged at non-uniform intervals according to a preset arrangement rule.
In this embodiment, the layout of the specific phase control device may still refer to the layout of the foregoing embodiment, where the difference is mainly that the phased array elements in the phase control device are uniformly arranged, and in this embodiment, the phased array elements in the phase control device are non-uniformly arranged, for example, in the dot matrix schematic shown in fig. 7a, the interval between every two adjacent dots is equidistant, and in this embodiment, the interval between two adjacent dots may be non-equidistant, where the non-equidistant layout also helps to promote the suppression effect of the grating lobes of the light beam, and further highlights the main lobe.
Reference may be made to the foregoing for other working procedures in this embodiment, and no further description is given here.
In summary, the two-dimensional optical phased array provided by the embodiment of the invention can effectively improve the main lobe energy, improve the sidelobe suppression ratio and obtain large-angle deflection by arranging the phased array element with the depletion type electro-optical modulation component in the middle area and arranging the phased array element with the injection type electro-optical modulation component around the phased array element. In addition, different beam effects can be obtained by adopting different layout forms for the phased array elements, so that the application of various different scenes is satisfied.
It is to be understood that the above embodiments are merely illustrative of the application of the principles of the present invention, but not in limitation thereof. Various modifications and improvements may be made by those skilled in the art without departing from the spirit and substance of the invention, and are also considered to be within the scope of the invention.
Claims (7)
1. The two-dimensional optical phased array is characterized by comprising an input coupling device and a phase control device which are sequentially coupled and connected along the transmission direction of light, wherein the input coupling device is used for forming input light according to a light source, the phase control device comprises a plurality of phased array elements, the plurality of phased array elements are arranged in a preset mode, and the final light-emitting of all the phased array elements interfere with each other to form a light-emitting beam of the two-dimensional optical phased array;
Wherein the phase control device is divided into a first phased array element area and a second phased array element area, the second phased array element area is arranged around the first phased array element area, the electro-optic modulation component of each phased array element positioned in the first phased array element area comprises a depletion modulator, the electro-optic modulation component of each phased array element positioned in the second phased array element area comprises an injection modulator,
all phased array elements in the first phased array element area and the second phased array element area are uniformly arranged at intervals, or all phased array elements in the first phased array element area and the second phased array element area are uniformly arranged at intervals according to a preset arrangement rule;
wherein the phased array element comprises:
the device comprises a thermo-optical modulation assembly, an electro-optical modulation assembly and an out-coupling assembly, wherein the thermo-optical modulation assembly, the electro-optical modulation assembly and the out-coupling assembly are sequentially arranged along the transmission direction of light, the thermo-optical modulation assembly is connected with the electro-optical modulation assembly through a first optical transmission medium, and the electro-optical modulation assembly is connected with the out-coupling assembly through a second optical transmission medium;
the thermo-optical modulation component can change the equivalent optical path of the passed input light under the action of a first electric signal through the thermo-optical effect to obtain first output light, and the first output light has a first phase and a first amplitude;
The electro-optical modulation component can change the equivalent optical path of the passed first output light under the action of a second electric signal through an electro-optical effect to obtain second output light, and the second output light has a second phase and a second amplitude;
the light-out coupling component can be used for coupling the second output light to obtain final light-out, and the final light-out is emitted to a free space along a preset light-out direction.
2. The two-dimensional optical phased array of claim 1, wherein the thermo-optic modulation assembly comprises a heat source portion and first conductive portions disposed at both ends of the heat source portion,
the first conductive part is used for connecting a first electrode, and the first electrode is used for accessing a first electric signal;
the heat source portion is capable of generating heat by the first electric signal to obtain a changing refractive index capable of changing an equivalent optical path of the input light passing therethrough.
3. The two-dimensional optical phased array of claim 1, wherein the electro-optic modulation assembly comprises a PN junction structure and second conductive portions disposed on opposite sides of the PN junction structure,
the second conductive part is used for connecting a second electrode, and the second electrode is used for accessing a second electric signal;
When a forward bias is applied to the PN junction structure through the second electrode, the PN junction structure forms an injection type modulator capable of changing the amplitude of the first output light under the action of the second electric signal;
when a reverse bias is applied to the PN junction structure through the second electrode, the PN junction structure forms a depletion modulator capable of changing the phase of the first output light under the action of the second electrical signal.
4. A two-dimensional optical phased array according to any of claims 1 to 3, further comprising:
the detector component is connected with the electro-optical modulation component through a third optical transmission medium and is used for detecting the light intensity of the second output light output by the electro-optical modulation component.
5. A two-dimensional optical phased array according to any of claims 1 to 3, wherein an isolation slot is provided between the thermo-optic modulating assembly and the electro-optic modulating assembly, the length of the isolation slot being no less than the length of the thermo-optic modulating assembly.
6. A two-dimensional optical phased array according to any of claims 1 to 3, wherein the out-coupling assembly comprises a coupling grating.
7. An optical phased array system, comprising: a laser and the two-dimensional optical phased array of any of claims 1 to 6, the laser being coupled to the two-dimensional optical phased array, the laser being for providing a light source.
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| JP2015068927A (en) * | 2013-09-27 | 2015-04-13 | 日本電信電話株式会社 | Phase array type optical switch |
| CN111367012A (en) * | 2018-12-26 | 2020-07-03 | 北京大学 | Optical phased array based on grating unit and optical scanning method |
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| CN112748420A (en) * | 2020-12-30 | 2021-05-04 | 中国科学院长春光学精密机械与物理研究所 | Main lobe grating lobe multipoint scanning laser radar based on one-dimensional optical phased array |
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| JP2015068927A (en) * | 2013-09-27 | 2015-04-13 | 日本電信電話株式会社 | Phase array type optical switch |
| CN111367012A (en) * | 2018-12-26 | 2020-07-03 | 北京大学 | Optical phased array based on grating unit and optical scanning method |
| CN111487602A (en) * | 2020-05-26 | 2020-08-04 | 中国电子科技集团公司电子科学研究院 | Optical phased array, laser radar and optical power distribution method |
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