CN116736422A - Wide-temperature-range corrosion-resistant stealth material based on multilayer film structure and preparation method thereof - Google Patents
Wide-temperature-range corrosion-resistant stealth material based on multilayer film structure and preparation method thereof Download PDFInfo
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- CN116736422A CN116736422A CN202310557821.4A CN202310557821A CN116736422A CN 116736422 A CN116736422 A CN 116736422A CN 202310557821 A CN202310557821 A CN 202310557821A CN 116736422 A CN116736422 A CN 116736422A
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- 239000000463 material Substances 0.000 title claims abstract description 61
- 238000005260 corrosion Methods 0.000 title claims abstract description 13
- 230000007797 corrosion Effects 0.000 title claims abstract description 13
- 238000002360 preparation method Methods 0.000 title abstract description 9
- -1 polytetrafluoroethylene Polymers 0.000 claims abstract description 33
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims abstract description 33
- 239000004810 polytetrafluoroethylene Substances 0.000 claims abstract description 33
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 30
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 30
- 238000000151 deposition Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 claims 2
- 238000001514 detection method Methods 0.000 abstract description 5
- 150000003839 salts Chemical class 0.000 abstract description 2
- 238000010298 pulverizing process Methods 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 239000004038 photonic crystal Substances 0.000 description 3
- 238000000985 reflectance spectrum Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- WSNMPAVSZJSIMT-UHFFFAOYSA-N COc1c(C)c2COC(=O)c2c(O)c1CC(O)C1(C)CCC(=O)O1 Chemical compound COc1c(C)c2COC(=O)c2c(O)c1CC(O)C1(C)CCC(=O)O1 WSNMPAVSZJSIMT-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
- G02B5/085—Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal
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- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Aiming, Guidance, Guns With A Light Source, Armor, Camouflage, And Targets (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention provides a wide-temperature-range corrosion-resistant stealth material based on a multilayer film structure and a preparation method thereof, and belongs to the technical field of infrared stealth materials. The stealth material provided by the invention is of a multilayer film system structure, the multilayer film is formed by alternately superposing germanium films and polytetrafluoroethylene films, and the outermost layer of the stealth material is the polytetrafluoroethylene film. The stealth material provided by the invention can be in a wide temperature range of-40-260 ℃, does not generate separation and pulverization, keeps low emission on an infrared detection wave band of 3-5 mu m or 8-12 mu m all the time, and is not corroded by high-temperature air; meanwhile, the material can resist the corrosion of ocean high humidity and high salt fog environment for a long time, and is a good wide Wen Yunai corrosion infrared camouflage material.
Description
Technical Field
The invention relates to the technical field of infrared stealth materials, in particular to a wide-temperature-range corrosion-resistant stealth material based on a multilayer film structure and a preparation method thereof.
Background
In modern warfare, the wide application of infrared reconnaissance and precision guided weapons presents a tremendous threat to the survival of military targets. In order to achieve a better camouflage effect on a high-temperature target, the stealth material needs to have low emissivity in the infrared detection band and high emissivity in the band outside the infrared detection band so as to facilitate heat dissipation of the target. The conventional infrared stealth material has low emissivity in the whole infrared band, and can cause heat accumulation, so that the infrared stealth effect of the low stealth material is improved and lowered at the target temperature, and the normal work of the target is influenced.
Most of the conventional infrared stealth materials adopt semiconductors and metals, and are easily corroded in the marine environment, so that the original functions are lost. In addition, when the material is used in a wide temperature range of-40-260 ℃, on one hand, the material forming the multilayer film is extremely easy to be corroded by oxygen, water vapor and the like in the air at a high temperature of more than 200 ℃, so that the material no longer has an infrared stealth effect; on the other hand, when the use temperature is greatly changed due to the difference of the thermal expansion coefficients of the film layers of different materials in the multilayer film, such as all the conventional semiconductor and metal materials, the film layers of different materials in the multilayer film are extremely easy to separate and pulverize due to the stress effect.
Disclosure of Invention
In view of the above, the present invention aims to provide a wide-temperature-range corrosion-resistant stealth material based on a multilayer film structure and a preparation method thereof.
In order to achieve the above object, the present invention provides the following technical solutions: the wide Wen Yunai corrosion stealth material based on a multilayer film structure is of a multilayer film system structure, the multilayer film is formed by alternately superposing germanium films and polytetrafluoroethylene films, the bottommost layer of the stealth material is the germanium film, and the topmost layer of the stealth material is the polytetrafluoroethylene film.
Preferably, the germanium (Ge) and polytetrafluoroethylene ((C) 2 F 4 ) n) the number of layers and the physical thickness of each layer can be finally determined according to stealth band requirements.
The invention also provides a preparation method of the stealth material, which adopts the magnetron sputtering coating technology, and the background vacuum degree is not higher than 2.0 multiplied by 10 during the preparation -3 Pa, the deposition rate of germanium and polytetrafluoroethylene is not more than 0.2nm/s. The invention ensures the evenness and compactness of the surfaces of all the film layers by controlling the vacuum degree and the deposition rate of germanium and polytetrafluoroethylene, so that the thickness changes of different positions of the same film layer in the photonic crystal are basically consistent when the use temperature is greatly changed, thereby reducing the extrusion among the film layers and ensuring that the film layers of different materials in the photonic crystal are not separated and pulverized.
The beneficial technical effects are as follows: the invention provides a wide Wen Yunai corrosion stealth material based on a multilayer film structure, wherein the stealth material is of a multilayer film system structure, the multilayer film is formed by alternately superposing germanium films and polytetrafluoroethylene films, the bottommost layer of the stealth material is the germanium film, and the topmost layer of the stealth material is the polytetrafluoroethylene film. Compared with the prior art, the invention takes the germanium film and the polytetrafluoroethylene film as the base materials, and the polytetrafluoroethylene film is adopted at the outermost layer of the stealth material, so the multilayer film stealth material adopting the structure has good marine high humidity resistance and high salt spray environment resistance because of good corrosion resistance and good hydrophobicity, and meanwhile, when the temperature is greatly changed, the extrusion between film layers of the photonic crystal can be reduced to a certain extent because the polytetrafluoroethylene film has elasticity; the emissivity of the stealth material based on the multilayer film is kept low in the middle infrared (3-5 mu m) or far infrared band (8-12 mu m), the emissivity in other bands is high, and the stealth material is not separated and pulverized in different material film layers, and cannot be corroded by oxygen, water vapor and the like in the air at high temperature, so that the stealth material can be used in a wide temperature range of-40-260 ℃ and in a strong corrosion-resistant environment while a good camouflage effect is realized.
Drawings
FIG. 1 is a schematic structural diagram of a stealth material of example 1;
FIG. 2 is a graph showing the normal reflectance spectrum of the stealth material of example 1 in the mid-infrared (3-5 microns);
FIG. 3 is a graph showing the normal reflectance spectrum of the stealth material of example 2 in the far infrared (8-12 microns);
FIG. 4 is a graph of the normal reflectance spectra of the stealth material of example 3 at mid-infrared (3-5 microns) and far-infrared (8-12 microns).
Detailed Description
The technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the embodiments of the present invention, and it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The invention provides a wide Wen Yunai corrosion stealth material based on a multilayer film structure, wherein the stealth material is of a multilayer film system structure, the multilayer film is formed by alternately superposing germanium films and polytetrafluoroethylene films, the bottommost layer of the stealth material is the germanium film, and the topmost layer of the stealth material is the polytetrafluoroethylene film.
In the present invention, the germanium (Ge) and polytetrafluoroethylene ((C) 2 F 4 ) n) the number of layers and the physical thickness of each layer can be finally determined according to stealth band requirements.
In the invention, when the stealth band is 3-5 mu m, the number of layers of the multilayer film is 6, the bottom layer is a germanium film, the top layer is a polytetrafluoroethylene film, and the thicknesses of the bottom layer starting films are 157.28nm,527.05nm,141.82nm,944.92nm,76.59nm and 1093.49nm in sequence;
when the stealth band is 8-12 mu m, the number of layers of the multilayer film is 4, the bottom layer is a germanium film, the top layer is a polytetrafluoroethylene film, and the thicknesses of the films from the bottom layer are 620nm,2025nm,474nm and 204nm in sequence;
when the stealth wave band is 3-5 mu m and 8-12 mu m, the number of layers of the multilayer film is 8, the bottom layer is a germanium film, the top layer is a polytetrafluoroethylene film, and the thicknesses of the films from the bottom layer are 491nm,520nm,52nm,1060nm,260nm,215nm,187nm and 150nm in sequence.
The design of the invention has low emissivity for the central wavelength of two wave bands of 3-5 mu m and 8-12 mu m and high emissivity in other wave bands, and solves the technical problem that the conventional infrared stealth material has low emissivity in the whole infrared wave band, so that heat accumulation is caused, and the infrared stealth effect of the low stealth material is increased and decreased at the target temperature.
The stealth material provided by the invention has the following advantages: 1) The infrared detection device has low emissivity on infrared detection wave bands of 3-5 mu m and 8-12 mu m, so that the infrared stealth function is realized, and the emissivity on other wave bands is high, so that the cooling and heat dissipation of the target are realized; 2) The film layers of different materials of the stealth material are not separated and pulverized, and can not be corroded by oxygen, water vapor and the like in the air at high temperature.
The invention also provides a preparation method of the stealth material, which adopts the magnetron sputtering coating technology, and the background vacuum degree is not higher than 2.0 multiplied by 10 during the preparation -3 Pa, the deposition rate of germanium and polytetrafluoroethylene is not more than 0.2nm/s.
For a better understanding of the present invention, the following examples are further illustrated, but are not limited to the following examples. The reagents used in the examples below are all commercially available.
Example 1
Preparing germanium film and polytetrafluoroethylene film alternately on the substrate by magnetron sputtering coating process, wherein the background vacuum degree is not higher than 2.0X10 -3 Pa, the deposition rate of germanium and polytetrafluoroethylene is not more than 0.2nm/s, the number of layers of the multilayer film is 6, wherein the bottom layer is a germanium film, the top layer is a polytetrafluoroethylene film, and the thicknesses of the films from the bottom layer are 157.28nm,527.05nm,141.82nm,944.92nm,76.59nm and 1093.49nm in sequence. The structural schematic diagram of the obtained stealth material is shown in fig. 1, wherein 2 is a germanium layer and 1 is a polytetrafluoroethylene layer.
The emissivity of the obtained stealth material in the middle infrared (3-5 microns) is measured, and as can be seen from fig. 1, the structure II: reflectance curve, theoretical reflectance average is 72%, thus emissivity is less than 0.3 in the 3-5 micron band (emissivity = 1-reflectance).
Example 2
Preparing germanium film and polytetrafluoroethylene film alternately on the substrate by magnetron sputtering coating process, wherein the background vacuum degree is not higher than 2.0X10 -3 Pa, the deposition rate of germanium and polytetrafluoroethylene is not more than 0.2nm/s, the number of layers of the multilayer film is 4, wherein the bottom layer is a germanium film, the top layer is a polytetrafluoroethylene film, and the thicknesses of the films from the bottom layer are 620nm,2025nm, 470 nm and 204nm in sequence.
The emissivity of the obtained stealth material in the far infrared (8-12 microns) is measured, and as can be seen from fig. 2, structure two: reflectance curve, theoretical reflectance average 86%, thus emissivity less than 0.2 at 8-12 microns (emissivity = 1-reflectance).
Example 3
Preparing germanium film and polytetrafluoroethylene film alternately on the substrate by magnetron sputtering coating process, wherein the background vacuum degree is not higher than 2.0X10 -3 Pa, the deposition rate of germanium and polytetrafluoroethylene is not more than 0.2nm/s, the number of layers of the multilayer film is 8, wherein the bottom layer is a germanium film, the top layer is a polytetrafluoroethylene film, and the thicknesses of the films from the bottom layer are 491nm,520nm,52nm,1060nm,260nm,215nm,187nm and 150nm in sequence.
The emissivity of the obtained stealth material in the middle infrared (3-5 microns) and the far infrared (8-12 microns) is measured, and as can be seen from fig. 3, the structure one: reflectance curve, average of 3-5 microns theoretical reflectance is 72%, average of 8-12 microns theoretical reflectance is 76%, and the emissivity of all 2 bands is less than 0.3 (emissivity=1-reflectance).
The foregoing is merely a preferred embodiment of the present invention and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present invention, which are intended to be comprehended within the scope of the present invention.
Claims (3)
1. The wide Wen Yunai corrosion stealth material based on the multilayer film structure is characterized in that the stealth material is of a multilayer film system structure, the multilayer film is formed by alternately superposing germanium films and polytetrafluoroethylene films, the bottommost layer of the stealth material is the germanium film, and the topmost layer of the stealth material is the polytetrafluoroethylene film.
2. The stealth material of claim 1, wherein the number of layers and the physical thickness of each layer of the germanium film and the polytetrafluoroethylene film are ultimately determined according to the stealth band requirements.
3. The method for preparing stealth material according to claim 1 or 2, wherein the background vacuum degree is not higher than 2.0 x 10 when the method is carried out by using magnetron sputtering coating technology -3 Pa, the deposition rate of germanium and polytetrafluoroethylene is not more than 0.2nm/s.
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Cited By (1)
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| CN117141073A (en) * | 2023-10-31 | 2023-12-01 | 中国科学技术大学先进技术研究院 | Infrared stealth multilayer film and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117141073A (en) * | 2023-10-31 | 2023-12-01 | 中国科学技术大学先进技术研究院 | Infrared stealth multilayer film and preparation method thereof |
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