CN116736318A - Infrared sensing device and display device - Google Patents
Infrared sensing device and display device Download PDFInfo
- Publication number
- CN116736318A CN116736318A CN202310710705.1A CN202310710705A CN116736318A CN 116736318 A CN116736318 A CN 116736318A CN 202310710705 A CN202310710705 A CN 202310710705A CN 116736318 A CN116736318 A CN 116736318A
- Authority
- CN
- China
- Prior art keywords
- infrared
- infrared sensing
- layer
- semiconductor structure
- sensing device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 99
- 230000006698 induction Effects 0.000 claims abstract description 8
- 230000001939 inductive effect Effects 0.000 claims abstract description 3
- 239000000758 substrate Substances 0.000 claims description 100
- 238000005538 encapsulation Methods 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 21
- 238000004806 packaging method and process Methods 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 230000007613 environmental effect Effects 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000001514 detection method Methods 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000013459 approach Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/08—Systems determining position data of a target for measuring distance only
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Computer Networks & Wireless Communication (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The application discloses an infrared sensing device and a display device, and belongs to the technical field of sensors. The infrared sensing device includes: an infrared emitter for emitting short wave infrared light of a predetermined wavelength band; a semiconductor structure, the transparent wave band of which comprises the predetermined wave band, the semiconductor structure being used for allowing short-wave infrared light of the predetermined wave band emitted by the infrared emitter to pass through; and the infrared induction array is positioned on one side of the semiconductor structure and is used for inducing short-wave infrared light passing through the semiconductor structure in the preset wave band. The application can isolate environmental noise, improve signal to noise ratio and reduce cost.
Description
Technical Field
The application belongs to the technical field of sensors, and particularly relates to an infrared sensing device and a display device.
Background
In order to reduce the influence of ambient light noise, the existing sensor manufacturers filter ambient light by means of coating infrared ink in an infrared sensing device or arranging a filter, so that infrared light emitted by an infrared emitter passes through and reaches an infrared sensing array. And devices such as infrared printing ink, a filter plate and the like need to be specifically designed by a coating manufacturer based on infrared light wave bands emitted by an infrared emitter, so that the cost of the infrared sensing device is increased.
Disclosure of Invention
The present application aims to solve at least one of the technical problems existing in the prior art. Therefore, the application provides the infrared sensing device and the display device, which can isolate environmental noise, improve signal to noise ratio and reduce cost.
In a first aspect, the present application provides an infrared sensing device comprising:
an infrared emitter for emitting short wave infrared light of a predetermined wavelength band;
a semiconductor structure, the transparent wave band of which comprises the predetermined wave band, the semiconductor structure being used for allowing short-wave infrared light of the predetermined wave band emitted by the infrared emitter to pass through;
and the infrared induction array is positioned on one side of the semiconductor structure and is used for inducing short-wave infrared light passing through the semiconductor structure in the preset wave band.
According to the infrared sensing device provided by the application, the infrared emitter can emit short-wave infrared light with a preset wave band by utilizing the light transmission characteristic of the semiconductor structure, the transparent wave band of the semiconductor structure comprises the preset wave band, the noise of the ambient light with other wave bands is isolated, the signal-to-noise ratio is improved, and the cost is reduced.
According to one embodiment of the present application, the infrared sensing device further includes a binding substrate;
the infrared emitter and the infrared sensing array are positioned on the same side of the binding substrate, and the semiconductor structure is positioned on one side of the infrared sensing array away from the binding substrate.
According to an embodiment of the present application, the infrared sensing device further includes an infrared sensor;
the infrared emitter and the infrared sensor are positioned on the same side of the binding substrate; the infrared sensor includes the infrared sensing array and the semiconductor structure.
According to an embodiment of the present application, the infrared sensor further includes a substrate;
the substrate is positioned on one side of the infrared sensing array away from the binding substrate, and the semiconductor structure comprises the substrate.
According to an embodiment of the present application, the infrared sensor further includes a readout circuit layer;
the readout circuitry layer is located between the substrate and the infrared sensing array, and the semiconductor structure further includes the readout circuitry layer.
According to an embodiment of the present application, the infrared sensor further includes a wiring layer;
the wiring layer is located between the substrate and the readout circuitry layer, and the semiconductor structure further includes the wiring layer.
According to one embodiment of the present application, the infrared sensing device further includes an encapsulation layer and a first light-transmitting layer;
the packaging layer is positioned on the binding substrate and covers the infrared sensor; the first light-transmitting layer is positioned on one side of the infrared sensor, which is away from the binding substrate, penetrates through the packaging layer and corresponds to the position of the infrared sensing array.
According to one embodiment of the application, an orthographic projection of the first light-transmitting layer on the infrared sensor covers the infrared sensing array.
According to an embodiment of the present application, the infrared sensing device further includes an infrared sensor;
the infrared emitter and the infrared sensor are positioned on the same side of the binding substrate; the infrared sensor comprises the infrared sensing array, and the semiconductor structure is positioned on one side of the infrared sensor away from the binding substrate.
According to an embodiment of the present application, the infrared sensor further includes a substrate, a wiring layer, and a readout circuitry layer;
the substrate is located between the binding substrate and the infrared sensing array, the wiring layer is located between the substrate and the infrared sensing array, and the readout circuit layer is located between the wiring layer and the infrared sensing array.
According to one embodiment of the present application, the infrared sensing device further includes an encapsulation layer;
the packaging layer is positioned on the binding substrate and covers the infrared sensor; the semiconductor structure penetrates through the packaging layer and corresponds to the position of the infrared sensing array.
According to one embodiment of the application, an orthographic projection of the semiconductor structure on the infrared sensor covers the infrared sensing array.
According to an embodiment of the present application, the infrared sensing device further includes a second light-transmitting layer;
the packaging layer also covers the infrared emitter, the second light-transmitting layer is positioned on one side of the infrared emitter, which is away from the binding substrate, and the second light-transmitting layer penetrates through the packaging layer and corresponds to the position of the infrared emitter.
According to one embodiment of the application, the material of the semiconductor structure comprises silicon, and the predetermined wavelength band is 1.2 μm to 1.4 μm.
In a second aspect, the present application provides a display device, which includes a display panel and the above-mentioned infrared sensing device;
the infrared sensing device is located at one side of the display panel.
According to the display device provided by the application, the infrared emitter can emit short-wave infrared light with a preset wave band by utilizing the light transmission characteristic of the semiconductor structure, the transparent wave band of the semiconductor structure comprises the preset wave band, the noise of the ambient light with other wave bands is isolated, the signal-to-noise ratio is improved, and the cost is reduced.
Additional aspects and advantages of the application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the application.
Drawings
The foregoing and/or additional aspects and advantages of the application will become apparent and may be better understood from the following description of embodiments taken in conjunction with the accompanying drawings in which:
fig. 1 is a schematic structural diagram of an infrared sensing device according to an embodiment of the present application;
fig. 2 is a schematic diagram of a scenario of an infrared sensing device according to an embodiment of the present application;
fig. 3 is a second schematic structural diagram of an infrared sensing device according to an embodiment of the present application;
fig. 4 is a second schematic view of a scenario of an infrared sensing device according to an embodiment of the present application;
fig. 5 is a schematic structural diagram of a display device according to an embodiment of the present application.
Detailed Description
Embodiments of the present application are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the application.
An infrared sensing device and a display device provided by the embodiments of the present application are described below with reference to fig. 1 to 5.
Fig. 1 and fig. 3 are schematic structural diagrams of an infrared sensing device according to an embodiment of the present application. The infrared sensing device can be a proximity sensing device, and the proximity sensing device can be applied to ranging environments such as near-ear detection of a mobile terminal, in-ear detection of an earphone or proximity detection of a sweeping robot.
As shown in fig. 1 and 3, an infrared sensing device provided in an embodiment of the present application includes an infrared emitter 1, a semiconductor structure 2, and an infrared sensing array 3.
The infrared emitter 1 is used for emitting short-wave infrared light of a predetermined wavelength band. The predetermined wavelength band is set based on the light transmission characteristics of the semiconductor structure 2. The infrared emitter 1 may include an infrared LED (not shown) for Emitting short-wave infrared Light of a predetermined wavelength band.
The transparent wavelength band of the semiconductor structure 2 comprises a predetermined wavelength band, and the semiconductor structure 2 is adapted to pass short-wave infrared light of the predetermined wavelength band emitted by the infrared emitter 1. By transparent band is meant that the semiconductor structure 2 is transparent to this band, i.e. the semiconductor structure 2 does not absorb light in this band. The predetermined wavelength band is arranged based on the transparent wavelength band of the semiconductor structure 2, which is located within the transparent wavelength band of the semiconductor structure 2, i.e. the transparent wavelength band of the semiconductor structure 2 comprises a predetermined wavelength band such that short-wave infrared light of the predetermined wavelength band emitted by the infrared emitter 1 can pass through the semiconductor structure 2, whereas ambient light cannot pass through the semiconductor structure 2.
The infrared sensing array 3 is located at one side of the semiconductor structure 2, and the infrared sensing array 3 is used for sensing short wave infrared light of a predetermined wave band passing through the semiconductor structure 2. The infrared emitter 1 emits short-wave infrared light with a preset wave band, the short-wave infrared light passes through the semiconductor structure 2 and reaches the infrared induction array 3, and the infrared induction array 3 senses and excites the short-wave infrared light with the preset wave band to generate photoelectrons so as to realize the detection of the distance according to the intensity change of the short-wave infrared light.
It should be noted that, the materials of the semiconductor structures 2 are different, and the transparent wavebands of the semiconductor structures 2 are different, so that the predetermined wavebands of the short-wave infrared light emitted by the infrared emitter 1 are different, and the predetermined wavebands of the short-wave infrared light sensed by the infrared sensing array 3 are different.
According to the embodiment, the light transmission characteristic of the semiconductor structure 2 is utilized, the infrared emitter 1 emits short-wave infrared light with a preset wave band, the transparent wave band of the semiconductor structure 2 comprises the preset wave band, the short-wave infrared light with the preset wave band emitted by the infrared emitter 1 is ensured to pass through the semiconductor structure 2 and reach the infrared induction array 3, so that on the premise that the short-wave infrared light signal is not influenced to be sufficient and stable, the ambient light noise of other wave bands is isolated, the signal to noise ratio is improved, and the dark current is reduced. In addition, the wave band emitted by the infrared emitter and the wave band sensed by the infrared sensing array 3 are adjusted according to the transparent wave band of the semiconductor 2, devices such as infrared ink and a filter are not required to be designed in a targeted mode, and cost of the infrared sensing device is reduced.
In some embodiments, the material of the semiconductor structure 2 comprises silicon with a predetermined wavelength band of 1.2 μm to 1.4 μm.
The wavelength range of the visible light is 380nm to 780nm, and the wavelength is divided into red light, orange light, yellow light, green light, cyan light, blue light and purple light from long to short. Further, the wavelength of infrared light is longer than that of red light, which is between 780nm and 1mm, and the upper spectrum is outside the red light. The spectrum segment of infrared light in which the transmittance of sunlight is high when sunlight passes through the atmosphere is generally referred to as an "atmospheric window". The band from 1 μm to 14 μm includes three "atmospheric windows", defined as: short Wave (SWIR) 1 μm to 2.5 μm, medium Wave (MWIR) 2.5 μm to 5 μm and Long Wave (LWIR) 8 μm to 4 μm. Minerals, artifacts and other features have special components that are "visible" to the short wave infrared, but not to the naked eye and visible near infrared.
The forbidden band width of silicon is 1.12eV, corresponding to a light wavelength of 1.1 μm. Thus, silicon is transparent to a wavelength band of 1.1 μm to 6 μm, typical wavelengths being 1.31 μm and 1.55 μm, and theoretically does not absorb infrared light. This transparent band is in the short wave infrared band, and the transmittance of pure silicon at a wavelength of 1.3 μm is as high as 90% to 95%, and the predetermined band may be set to 1.2 μm to 1.4 μm.
The working band of the infrared sensing device in the related art is usually 0.78-0.94 μm, and devices such as infrared ink or a filter are required to be additionally designed to filter infrared light in the band of 0.78-0.94 μm, so that the cost is high. In this embodiment, based on the material silicon of the semiconductor structure 2, the predetermined wavelength band is determined to be 1.2 μm to 1.4 μm, so that the infrared emitter 1 emits the short-wave infrared light of the predetermined wavelength band, and the infrared sensing array 3 senses the short-wave infrared light of the predetermined wavelength band, and environmental light noise can be isolated without additional design of infrared ink, a filter and other devices, and the cost is reduced.
It should be noted that, the semiconductor structure 2 may be made of other materials, and the predetermined wavelength band may be other wavelength bands, so long as the semiconductor structure 2 can pass through the light of the predetermined wavelength band and isolate the light of the other wavelength bands.
In some embodiments, as shown in fig. 1 and 3, the infrared sensing device further includes a binding substrate 4. The infrared emitter 1 and the infrared sensing array 3 are located on the same side of the bonded substrate 4, and the semiconductor structure 2 is located on the side of the infrared sensing array 3 facing away from the bonded substrate 4. The binding substrate 4 may be a PCB (Printed Circuit Board ) substrate.
For example, the infrared emitter 1 and the infrared sensing array 3 are both located above the bonded substrate 4, and the semiconductor structure 2 is located above the infrared sensing array 3. As shown in fig. 2 and fig. 4, the infrared sensing array 3 emits the shortwave infrared light with a predetermined wavelength band upward, when the object 10 is connected to the upper side of the near infrared sensing array 3, part of the shortwave infrared light emitted by the infrared emitter 1 is reflected by the object 10, the reflected shortwave infrared light passes through the semiconductor structure 2 to reach the infrared sensing array 3, and the infrared sensing array 3 senses the shortwave infrared light passing through the semiconductor structure 2, so as to realize distance detection.
In some embodiments, as shown in fig. 1, the infrared sensing device further includes an infrared sensor 30. The infrared emitter 1 and the infrared sensor 30 are located on the same side of the bonded substrate 4, and the infrared sensor 30 includes the infrared sensing array 3 and the semiconductor structure 2.
The infrared sensor 30 and the infrared emitter 1 are both bonded on the bonding substrate 4, and the infrared sensor 30 and the infrared emitter 1 are bonded on the same side of the bonding substrate 4. The infrared sensing array 3 and the semiconductor structure 2 are devices in the infrared sensor 30, and the infrared sensing array 3 is located between the bonded substrate 4 and the semiconductor structure 2.
In this embodiment, a part of devices in the infrared sensor 30 are used as the semiconductor structure 2, so that the short-wave infrared light with a predetermined wave band emitted by the infrared emitter 1 passes through the semiconductor structure 2 to reach the infrared sensing array 3, and the semiconductor structure 2 isolates ambient light noise, so that the signal to noise ratio is improved on the premise of ensuring that the short-wave infrared light signal is sufficient and stable, and no additional devices are required to be arranged outside the infrared sensor 30, thereby further reducing the cost.
In some embodiments, as shown in fig. 1, the infrared sensor 30 further includes a substrate 31. The substrate 31 is located on the side of the infrared sensing array 3 facing away from the bonded substrate 4, and the semiconductor structure 2 comprises said substrate 31. Wherein the material of the substrate 31 is a semiconductor material, for example, the material of the substrate 31 is silicon.
In the embodiment, the substrate 31 in the infrared sensor 30 is used as the semiconductor structure 2, and the substrate 31 is positioned on one side of the infrared sensing array 3 away from the binding substrate 4, so that the short-wave infrared light of a preset wave band emitted by the infrared emitter 1 passes through the substrate 31 to reach the infrared sensing array 3, and the substrate 31 isolates ambient light noise, so that the signal to noise ratio is improved on the premise of ensuring sufficient and stable short-wave infrared light signals, and no additional device is arranged outside the infrared sensor 30, so that the cost is further reduced.
In some embodiments, as shown in fig. 1, the infrared sensor 30 further includes a readout circuitry layer 32. The readout circuitry layer 32 is located between the substrate 31 and the infrared sensing array 3, and the semiconductor structure 2 further includes the readout circuitry layer 32. The material of the readout circuitry layer 32 is a semiconductor material, and the material of the readout circuitry layer 32 is the same as that of the substrate 31, for example, the material of the readout circuitry layer 32 is silicon. The readout circuit layer 32 is electrically connected with the infrared sensing array 3, the infrared sensing array 3 is used for converting the sensed short-wave infrared light into an electrical signal, and the readout circuit layer 32 is used for reading out the electrical signal converted by the infrared sensing array 3.
In the embodiment, the substrate 31 and the readout circuit layer 32 in the infrared sensor 30 are used as the semiconductor structure 2, and the substrate 31 and the readout circuit layer 32 are both positioned on one side of the infrared sensing array 3, which is away from the binding substrate 4, so that the short-wave infrared light of a preset wave band emitted by the infrared emitter 1 passes through the substrate 31 and the readout circuit layer 32 to reach the infrared sensing array 3, and the substrate 31 and the readout circuit layer 32 isolate ambient light noise, so that the signal to noise ratio is improved on the premise of ensuring sufficient and stable short-wave infrared light signals, no additional devices are required to be arranged outside the infrared sensor 30, and the cost is further reduced.
In some embodiments, as shown in fig. 1, the infrared sensor 30 further includes a wiring layer 33. The wiring layer 33 is located between the substrate 31 and the readout circuitry layer 32, and the semiconductor structure 2 further includes the wiring layer 33. The material of the wiring layer 33 is a semiconductor material, and the material of the wiring layer 33 is the same as the material of the substrate 31 and the readout circuitry layer 32, for example, the material of the wiring layer 33 is silicon. Various wires are arranged in the wiring layer 33, and the electrical connection of each device in the infrared sensing device can be realized through the wires in the wiring layer 33.
In this embodiment, the substrate 31, the readout circuit layer 32 and the wiring layer 33 in the infrared sensor 30 are used as the semiconductor structure 2, and the substrate 31, the readout circuit layer 32 and the wiring layer 33 are all located at one side of the infrared sensing array 3, which is away from the bonding substrate 4, so that the short-wave infrared light of a predetermined wave band emitted by the infrared emitter 1 passes through the substrate 31, the readout circuit layer 32 and the wiring layer 33 to reach the infrared sensing array 3, and the substrate 31, the readout circuit layer 32 and the wiring layer 33 isolate ambient light noise, so that the signal to noise ratio is improved on the premise of ensuring sufficient and stable short-wave infrared light signals, no additional devices are required to be arranged outside the infrared sensor 30, and the cost is further reduced.
In some embodiments, as shown in fig. 1, the infrared sensing device further includes an encapsulation layer 5 and a first light-transmitting layer 6. The encapsulation layer 5 is located on the bonding substrate 4 and covers the infrared sensor 30. The first light-transmitting layer 6 is located at one side of the infrared sensor 30 away from the binding substrate 4, and the first light-transmitting layer 6 penetrates through the encapsulation layer 5 and corresponds to the position of the infrared sensing array 3. The encapsulation layer 5 may be a resin type encapsulation cover plate or the like, and the first light-transmitting layer 6 may be a light-transmitting film or the like.
The encapsulation layer 5 is used to encapsulate the infrared sensor 30 on the bonded substrate 4. Because the packaging layer 5 covers the infrared sensor 30, the first light-transmitting layer 6 is further required to be arranged, so that the first light-transmitting layer 6 is positioned on one side of the infrared sensor 30 away from the binding substrate 4, the first light-transmitting layer 6 penetrates through the packaging layer 5, and the position of the first light-transmitting layer 6 corresponds to the position of the infrared sensing array 3, thereby ensuring that short-wave infrared light can pass through the first light-transmitting layer 6 to reach the infrared sensor 30.
In some embodiments, the front projection of the first light transmissive layer 6 onto the infrared sensor 30 covers the infrared sensing array 3. For example, the front projection of the first light-transmitting layer 6 onto the infrared sensor 30 covers exactly the infrared-sensing array 3 completely, to ensure that sufficiently stable short-wave infrared light reaches the infrared sensor 30.
In some embodiments, the infrared sensing device further comprises a second light transmissive layer 7. The encapsulation layer 5 also covers the infrared emitter 1, and the second light-transmitting layer 7 penetrates through the encapsulation layer 5 and corresponds to the position of the infrared emitter 1. The second light-transmitting layer 7 may be a light-transmitting film or the like.
The encapsulation layer 5 also serves to encapsulate the infrared emitter 1 on the bonded substrate 4. Because the packaging layer 5 covers the infrared emitter 1, a second light-transmitting layer 7 is further required to be arranged, so that the second light-transmitting layer 7 is positioned on one side of the infrared emitter 1 away from the binding substrate 4, the second light-transmitting layer 7 penetrates through the packaging layer 5, and the position of the second light-transmitting layer 7 corresponds to the position of the infrared emitter 1, thereby ensuring that short-wave infrared light emitted by the infrared emitter 1 can reach outside the packaging layer 5.
In some embodiments, the infrared emitter 1 may further comprise a lens (not shown in the figures) located on the infrared LED for condensing the short-wave infrared light of a predetermined wavelength band emitted by the infrared LED. The orthographic projection of the second light-transmitting layer 7 on the binding substrate 4 covers the orthographic projection of the lens on the binding substrate 4, for example, the orthographic projection of the second light-transmitting layer 7 on the binding substrate 4 and the orthographic projection of the lens on the binding substrate 4 are exactly and completely overlapped, so as to ensure that the shortwave infrared light emitted by the infrared emitter 1 can reach the outside of the packaging layer 5.
As shown in fig. 2, the infrared sensing array 3 emits upward short-wave infrared light of a predetermined wavelength band, which passes through the second light-transmitting layer 7 to the outside of the encapsulation layer 5. When an object 10 approaches above the infrared sensor 30, part of the short-wave infrared light emitted by the infrared emitter 1 is reflected by the object 10, and the reflected short-wave infrared light passes through the first light-transmitting layer 6 to reach the infrared sensor 30. The short-wave infrared light reaching the infrared sensor 30 passes through the semiconductor structure 2 to reach the infrared sensing array 3, and the infrared sensing array 3 senses the short-wave infrared light passing through the semiconductor structure 2 to realize distance detection.
In some embodiments, as shown in fig. 3, the infrared sensing device further includes an infrared sensor 30. The infrared emitter 1 and the infrared sensor 30 are located on the same side of the bonded substrate 4. The infrared sensor 30 comprises an infrared sensing array 3, the semiconductor structure 2 being located on a side of the infrared sensor 30 facing away from the bonded substrate 4.
The infrared sensor 30 and the infrared emitter 1 are both bonded on the bonding substrate 4, and the infrared sensor 30 and the infrared emitter 1 are bonded on the same side of the bonding substrate 4. The infrared sensing array 3 is a device in the infrared sensor 30, the semiconductor structure 2 is disposed outside the infrared sensor 30, and the infrared sensor 30 is located between the bonding substrate 4 and the semiconductor structure 2.
The semiconductor structure 2 in this embodiment is located outside the infrared sensor 30, so that the short-wave infrared light of a predetermined wavelength band emitted by the infrared emitter 1 passes through the semiconductor structure 2 to reach the infrared sensing array 3, and the semiconductor structure 2 isolates ambient light noise, so as to improve the signal-to-noise ratio and reduce the cost on the premise of ensuring sufficient and stable short-wave infrared light signals.
In some embodiments, as shown in fig. 3, the infrared sensor 30 further includes a substrate 31, a wiring layer 33, and a readout circuitry layer 32. The substrate 31 is located between the bonding substrate 4 and the infrared sensing array 3, the wiring layer 33 is located between the substrate 31 and the infrared sensing array 3, and the readout circuit layer 32 is located between the wiring layer 33 and the infrared sensing array 3. The materials of the substrate 31, the readout circuitry layer 32, and the wiring layer 33 may be the same or different, and are not particularly limited herein.
In this embodiment, the substrate 31, the readout circuit layer 32 and the wiring layer 33 are located between the infrared sensing array 3 and the bonding substrate 4, so that the short-wave infrared light with a predetermined wavelength band emitted by the infrared emitter 1 passes through the semiconductor structure 2 and then reaches the infrared sensing array 3, but does not pass through the substrate 31, the readout circuit layer 32 and the wiring layer 33, so that the signal-to-noise ratio is improved and the cost is reduced on the premise of ensuring that the short-wave infrared light signal is sufficient and stable.
In some embodiments, as shown in fig. 3, the infrared sensing device further comprises an encapsulation layer 5. The encapsulation layer 5 is located on the bonding substrate 4 and covers the infrared sensor 30. The semiconductor structure 2 penetrates through the encapsulation layer 5 and corresponds to the position of the infrared sensing array 3.
The encapsulation layer 5 is used to encapsulate the infrared sensor 30 on the bonded substrate 4. Since the encapsulation layer 5 covers the infrared sensor 30, the semiconductor structure 2 penetrates the encapsulation layer 5, and the position of the semiconductor structure 2 corresponds to the position of the infrared sensing array 3, so that the short-wave infrared light can pass through the semiconductor structure 2 to reach the infrared sensing array 3.
In some embodiments, the semiconductor structure 2 may be a lens penetrating through the encapsulation layer 5, so as to concentrate the short-wave infrared light and increase the penetration of the short-wave infrared light while ensuring that the short-wave infrared light passes through.
In some embodiments, the front projection of the semiconductor structure 2 onto the infrared sensor 30 covers the infrared sensing array 3. For example, the front projection of the semiconductor structure 2 onto the infrared sensor 30 covers exactly the infrared sensing array 3 completely, to ensure a sufficiently stable short-wave infrared light reaching the infrared sensor 30.
In some embodiments, the infrared sensing device further comprises a second light transmissive layer 7. The encapsulation layer 5 also covers the infrared emitter 1, and the second light-transmitting layer 7 penetrates through the encapsulation layer 5 and corresponds to the position of the infrared emitter 1. The second light-transmitting layer 7 may be a light-transmitting film or the like.
As shown in fig. 4, the infrared sensing array 3 emits upward short-wave infrared light of a predetermined wavelength band, which passes through the second light-transmitting layer 7 to the outside of the encapsulation layer 5. When the object 10 approaches to the upper part of the infrared sensor 30, part of the short-wave infrared light emitted by the infrared emitter 1 is reflected by the object 10, the reflected short-wave infrared light passes through the semiconductor structure 2 to reach the infrared induction array 3, and the infrared induction array 3 senses the short-wave infrared light passing through the semiconductor structure 2 to realize distance detection.
In some embodiments, as shown in fig. 1 and 3, the infrared sensor 30 may further include a first electrode 34 and a second electrode 35. The first electrode 34 is disposed opposite to the second electrode 35, the infrared sensing array 3 is disposed between the first electrode 34 and the second electrode 35, and the second electrode 35 is disposed between the infrared sensing array 3 and the readout circuitry layer 32. The first electrode 34 is used for inputting voltage, and the infrared sensing array 3 is electrically connected with the readout circuit layer 32 through the second electrode 35.
In some embodiments, as shown in fig. 1 and 3, the infrared sensor 30 may further include an analog-to-digital conversion module 36, a digital processing module 37, and a power control module 38. The analog-to-digital conversion module 36, the digital processing module 37, the power supply control module 38 and the readout circuitry layer 32 are all located on the wiring layer 33, and the analog-to-digital conversion module 36 is located between the digital processing module 37 and the readout circuitry layer 32, and the power supply control module 38 is located on a side of the readout circuitry layer 32 facing away from the analog-to-digital conversion module 36.
The analog-to-digital conversion module 36 is electrically connected to the readout circuitry layer 32 through the traces in the wiring layer 33, and is configured to convert the analog signals read out by the readout circuitry layer 32 into digital signals. The digital processing module 37 is electrically connected to the analog-to-digital conversion module 36 through the wiring in the wiring layer 33, and is configured to process the digital signal converted by the analog-to-digital conversion module 36 and output the processed signal. The power control module 38 is electrically connected to the readout circuit layer 32, the analog-to-digital conversion module 36, the digital processing module 37 and the infrared emitter 1 through wires in the wiring layer 33, and is used for supplying power to the readout circuit layer 32, the analog-to-digital conversion module 36, the digital processing module 37 and the infrared emitter 1.
According to the infrared sensing device provided by the embodiment of the application, the infrared emitter emits short-wave infrared light with a preset wave band by utilizing the light transmission characteristic of the semiconductor structure, and the transparent wave band of the semiconductor structure comprises the preset wave band, so that the noise of the ambient light with other wave bands is isolated, the signal to noise ratio is improved, and the cost is reduced.
Accordingly, the embodiment of the present application also provides a display device including the infrared sensing device 100 and the display panel 200. The infrared sensing device 100 is the infrared sensing device in the above embodiment, and will not be described in detail here. The infrared sensing device 100 is located at one side of the display panel 200, for example, the infrared sensing device 100 may be located at the rear surface of the display panel 200.
According to the display device provided by the embodiment of the application, the infrared emitter emits short-wave infrared light with the preset wave band by utilizing the light transmission characteristic of the semiconductor structure, and the transparent wave band of the semiconductor structure comprises the preset wave band, so that the noise of the ambient light with other wave bands is isolated, the signal-to-noise ratio is improved, and the cost is reduced.
In some embodiments, the display device may further include a terminal module (not shown), and the infrared sensing device 100 and the display panel 200 are electrically connected to the terminal module, respectively.
The display device provided by the embodiment of the application can be applied to any product or component with a display function, such as a mobile phone, a tablet personal computer, a television, a display, a notebook computer, a digital photo frame, a navigator and the like.
The terms first, second and the like in the description and in the claims, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged, as appropriate, such that embodiments of the present application may be implemented in sequences other than those illustrated or described herein, and that the objects identified by "first," "second," etc. are generally of a type, and are not limited to the number of objects, such as the first object may be one or more.
In the description of the present application, "plurality" means two or more.
In the description of the present specification, reference to the terms "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the application. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the present application have been shown and described, it will be understood by those of ordinary skill in the art that: many changes, modifications, substitutions and variations may be made to the embodiments without departing from the spirit and principles of the application, the scope of which is defined by the claims and their equivalents.
Claims (15)
1. An infrared sensing device, comprising:
an infrared emitter for emitting short wave infrared light of a predetermined wavelength band;
a semiconductor structure, the transparent wave band of which comprises the predetermined wave band, the semiconductor structure being used for allowing short-wave infrared light of the predetermined wave band emitted by the infrared emitter to pass through;
and the infrared induction array is positioned on one side of the semiconductor structure and is used for inducing short-wave infrared light passing through the semiconductor structure in the preset wave band.
2. The infrared sensing device of claim 1, further comprising a binding substrate;
the infrared emitter and the infrared sensing array are positioned on the same side of the binding substrate, and the semiconductor structure is positioned on one side of the infrared sensing array away from the binding substrate.
3. The infrared sensing device of claim 2, wherein the infrared sensing device further comprises an infrared sensor;
the infrared emitter and the infrared sensor are positioned on the same side of the binding substrate; the infrared sensor includes the infrared sensing array and the semiconductor structure.
4. The infrared sensing device of claim 3, wherein the infrared sensor further comprises a substrate;
the substrate is positioned on one side of the infrared sensing array away from the binding substrate, and the semiconductor structure comprises the substrate.
5. The infrared sensing device of claim 4, wherein the infrared sensor further comprises a readout circuitry layer;
the readout circuitry layer is located between the substrate and the infrared sensing array, and the semiconductor structure further includes the readout circuitry layer.
6. The infrared sensing device of claim 5, wherein the infrared sensor further comprises a wiring layer;
the wiring layer is located between the substrate and the readout circuitry layer, and the semiconductor structure further includes the wiring layer.
7. The infrared sensing device of claim 3, further comprising an encapsulation layer and a first light transmissive layer;
the packaging layer is positioned on the binding substrate and covers the infrared sensor; the first light-transmitting layer is positioned on one side, away from the binding substrate, of the infrared sensor, penetrates through the packaging layer and corresponds to the position of the infrared sensing array.
8. The infrared sensing device of claim 7, wherein an orthographic projection of the first light transmissive layer on the infrared sensor covers the infrared sensing array.
9. The infrared sensing device of claim 2, wherein the infrared sensing device further comprises an infrared sensor;
the infrared emitter and the infrared sensor are positioned on the same side of the binding substrate; the infrared sensor comprises the infrared sensing array, and the semiconductor structure is positioned on one side of the infrared sensor away from the binding substrate.
10. The infrared sensing device of claim 9, wherein the infrared sensor further comprises a substrate, a wiring layer, and a readout circuitry layer;
the substrate is located between the binding substrate and the infrared sensing array, the wiring layer is located between the substrate and the infrared sensing array, and the readout circuit layer is located between the wiring layer and the infrared sensing array.
11. The infrared sensing device of claim 9, further comprising an encapsulation layer;
the packaging layer is positioned on the binding substrate and covers the infrared sensor; the semiconductor structure penetrates through the packaging layer and corresponds to the position of the infrared sensing array.
12. The infrared sensing device of claim 11, wherein an orthographic projection of the semiconductor structure on the infrared sensor covers the infrared sensing array.
13. The infrared sensing device according to claim 7 or 11, characterized in that the infrared sensing device further comprises a second light-transmitting layer;
the packaging layer also covers the infrared emitter, the second light-transmitting layer is positioned on one side of the infrared emitter, which is away from the binding substrate, and the second light-transmitting layer penetrates through the packaging layer and corresponds to the position of the infrared emitter.
14. The infrared sensing device of claim 1, wherein the material of the semiconductor structure comprises silicon and the predetermined wavelength band is 1.2 μm to 1.4 μm.
15. A display device comprising a display panel and an infrared sensing device according to any one of claims 1 to 14;
the infrared sensing device is located at one side of the display panel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310710705.1A CN116736318A (en) | 2023-06-15 | 2023-06-15 | Infrared sensing device and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310710705.1A CN116736318A (en) | 2023-06-15 | 2023-06-15 | Infrared sensing device and display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116736318A true CN116736318A (en) | 2023-09-12 |
Family
ID=87914640
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310710705.1A Pending CN116736318A (en) | 2023-06-15 | 2023-06-15 | Infrared sensing device and display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116736318A (en) |
-
2023
- 2023-06-15 CN CN202310710705.1A patent/CN116736318A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109933237B (en) | Display panel, display device and pressure detection method | |
| US20050270405A1 (en) | Image pickup device and camera module | |
| EP3401701A1 (en) | Optical sensor arrangement | |
| CN102918546A (en) | Finger sensor including capacitive lens and associated methods | |
| JP2010529434A (en) | Method for reducing crosstalk of optical sensor | |
| CN102620822A (en) | Brightness and proximity multi-chip integrated sensor and packaging method thereof | |
| CN101110412A (en) | A composite assembly that incorporate multiple devices that use different wavelengths of light and method for making same | |
| US11495048B2 (en) | Fingerprint sensing module | |
| CN112271176B (en) | Interactive COB display module, manufacturing method thereof and display screen | |
| US20200057530A1 (en) | Electronic device | |
| US20060061889A1 (en) | Electronic module with light-blocking features | |
| CN210072654U (en) | Display panel and electronic device | |
| KR20210008238A (en) | Electronic apparatus | |
| CN1386042A (en) | Sensor circuit modular unit and electronic device using same | |
| CN116736318A (en) | Infrared sensing device and display device | |
| US10895641B2 (en) | Proximity sensing device | |
| CN112882602A (en) | Display module and electronic equipment | |
| CN104978052B (en) | The electronic installation of high electrostatic protection | |
| CN210489619U (en) | Distance sensing device | |
| US10794760B2 (en) | Optical sensor device | |
| CN214376505U (en) | Electronic device with fingerprint sensing function | |
| CN114556452A (en) | Chip packaging structure and electronic equipment | |
| JP2002250657A (en) | Illuminance sensor module | |
| CN110649012A (en) | System-in-package structure and electronic device | |
| US20020179988A1 (en) | Pakage structure integrating image sensor to controller chip of scanning apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |