CN116735569A - Plasma emission spectrum detector based on full spectrum measurement - Google Patents
Plasma emission spectrum detector based on full spectrum measurement Download PDFInfo
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- CN116735569A CN116735569A CN202310767805.8A CN202310767805A CN116735569A CN 116735569 A CN116735569 A CN 116735569A CN 202310767805 A CN202310767805 A CN 202310767805A CN 116735569 A CN116735569 A CN 116735569A
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- plasma emission
- emission spectrum
- measurement based
- based plasma
- spectrum measurement
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- 238000000295 emission spectrum Methods 0.000 title claims abstract description 20
- 238000005259 measurement Methods 0.000 title claims abstract description 19
- 238000001228 spectrum Methods 0.000 title claims abstract description 19
- 238000001514 detection method Methods 0.000 claims abstract description 9
- 239000010453 quartz Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 230000005684 electric field Effects 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 230000003595 spectral effect Effects 0.000 claims description 3
- 239000012535 impurity Substances 0.000 abstract description 8
- 238000005516 engineering process Methods 0.000 abstract description 5
- 238000001914 filtration Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000013375 chromatographic separation Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000000567 combustion gas Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000004868 gas analysis Methods 0.000 description 1
- 238000004817 gas chromatography Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004451 qualitative analysis Methods 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/71—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited
- G01N21/73—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited using plasma burners or torches
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0205—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows
- G01J3/0208—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows using focussing or collimating elements, e.g. lenses or mirrors; performing aberration correction
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/04—Slit arrangements slit adjustment
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/12—Generating the spectrum; Monochromators
- G01J3/18—Generating the spectrum; Monochromators using diffraction elements, e.g. grating
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/2803—Investigating the spectrum using photoelectric array detector
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/443—Emission spectrometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N30/00—Investigating or analysing materials by separation into components using adsorption, absorption or similar phenomena or using ion-exchange, e.g. chromatography or field flow fractionation
- G01N30/02—Column chromatography
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N30/00—Investigating or analysing materials by separation into components using adsorption, absorption or similar phenomena or using ion-exchange, e.g. chromatography or field flow fractionation
- G01N30/02—Column chromatography
- G01N30/62—Detectors specially adapted therefor
- G01N30/74—Optical detectors
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- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Plasma & Fusion (AREA)
- Engineering & Computer Science (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Abstract
A full spectrum measurement based plasma emission spectrum detector, comprising: the ionization chamber, the reflector group arranged on one side of the ionization chamber, the slit arranged on the other side of the ionization chamber, the condensing lens for transmitting the light from the reflector group and the slit, the beam-splitting grating for dispersing the incident light from the condensing lens, the photoelectric detector for detecting the scattered light from the beam-splitting grating, and the amplifying circuit for receiving the output information from the photoelectric detector. Thus, by combining the plasma technology and the special filtering technology and applying the combined technology to the gas chromatograph, the gas chromatograph instrument and instrument detection can be realized without being limited by the mode that the content concentration of the trace impurity of the gas is 0.1 ppbv/v.
Description
Technical Field
The application relates to the technical field of gas analysis and detection, in particular to a plasma emission spectrum detector based on full spectrum measurement.
Background
Gas chromatography instruments typically employ chromatographic separation techniques and detection techniques to perform qualitative and quantitative analysis of a multi-component mixture. However, existing gas chromatograph instruments and meter detection are limited to gas trace impurity levels at levels of 0.1 ppbv/v. How to break through this pattern to achieve low detection limit is a technical problem that the art expects to solve.
Disclosure of Invention
In order to solve the problems, the application aims to provide a plasma emission spectrum detector based on full spectrum measurement, which is a novel detector applicable to a gas chromatograph, combines a plasma technology and a special filtering technology, and can realize the mode that the detection of the gas chromatograph instrument and instrument is not limited by the content concentration of gas trace impurities at 0.1 ppbv/v.
According to the present application, there is provided a plasma emission spectrum detector based on full spectrum measurement, comprising: the ionization chamber, the reflector group arranged on one side of the ionization chamber, the slit arranged on the other side of the ionization chamber, the condensing lens for transmitting the light from the reflector group and the slit, the beam-splitting grating for dispersing the incident light from the condensing lens, the photoelectric detector for detecting the scattered light from the beam-splitting grating, and the amplifying circuit for receiving the output information from the photoelectric detector.
Preferably, the plasma emission spectrum detector further comprises a power supply for applying an electric field to the ionization gas chamber.
Preferably, the mirror assembly is formed as a concave mirror.
Preferably, the ionization chamber is made of a quartz material or a sapphire material, comprising a gas inlet for gas entry and a gas outlet for gas output.
Preferably, the slit is provided with a driving mechanism for adjusting the size of the slit.
Preferably, the grating spectral bands include ultraviolet, visible, infrared, near infrared, mid-far infrared.
Preferably, the photodetector is configured to convert a result of detection of the dispersed light from the spectroscope into a digital voltage signal and output the digital voltage signal to the amplifying circuit.
Preferably, the photodetector is: photomultiplier tubes, photodiodes, avalanche diodes, silicon photomultiplier tubes SiPM, photosensitive array diodes or CCD line array detectors.
Preferably, the amplifying circuit includes a first stage amplifier, a second stage amplifier, and a third stage amplifier.
Preferably, the power supply is a radio frequency power supply for forming a high frequency high voltage electric field of adjustable voltage and frequency around the ionization chamber.
According to the plasma emission spectrum detector based on full spectrum measurement, combustion gas and combustion-supporting gas are not needed, and carrier gas can be nitrogen or inert gas, so that a blank of the analysis industry can be filled, the technical problem of the industry is overcome, and the plasma emission spectrum detector based on full spectrum measurement can be widely applied to industries such as semiconductor gas, special gas, petrochemical industry and coal chemical industry.
Drawings
Fig. 1 schematically shows a configuration diagram of an arrangement of a detector according to an embodiment of the present application.
Detailed Description
Exemplary embodiments of the present application are described in detail below with reference to the attached drawings. The exemplary embodiments described below and illustrated in the drawings are intended to teach the principles of the present application to enable one skilled in the art to make and use the present application in a number of different environments and for a number of different applications. The scope of the application is therefore defined by the appended claims, and the exemplary embodiments are not intended, and should not be considered, as limiting the scope of the application. Moreover, for ease of description, the dimensions of the various elements shown in the figures are not necessarily drawn to actual scale, and references to orientation, such as upper, lower, left, right, top, bottom, etc., are based on the orientation or positional relationship shown in the figures, merely to facilitate description of the application and simplify description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be configured and operated in a particular orientation, and therefore should not be construed as limiting the application. Like elements are denoted by like or similar reference numerals throughout the drawings. Conventional structures or local constructions will be omitted when they may cause confusion or unaware of an understanding of the present disclosure.
As shown in fig. 1, the plasma emission spectrum detector 10 for full spectrum measurement mainly comprises a power supply 1, a mirror group 2, an ionization air chamber 3 to which a high-frequency high-voltage electric field is applied, a slit 4, a condensing lens 5, a beam-splitting grating 6, a photodetector 7, and an amplifying circuit 8.
Wherein the power source 1 is for example a radio frequency power source applied to the ionization chamber 3. Preferably, a high frequency high voltage electric field of adjustable voltage and frequency is formed around the ionization gas chamber 3.
The mirror group 2 is formed, for example, as a concave mirror, arranged on one side of the ionization chamber 3, for reflecting light scattered from the ionization chamber 3 toward a slit 4 arranged on the other side of the ionization chamber 3.
The ionization gas chamber 3 may comprise a quartz material, a sapphire material, for example, a quartz tube, around which a high-frequency high-intensity electromagnetic field is provided, and the carrier gas, which enters from a gas inlet at the lower side and is output from a gas outlet at the upper side in fig. 1, is ionized by the electromagnetic field to generate plasma, so that the impurity-containing gas sample, which enters the quartz tube from the gas inlet, is ionized by the plasma to emit light of different wavelengths. The quartz tube is provided in a transparent structure at least in a portion corresponding to the mirror group 2 to further enhance the intensity of these lights by reflection by the mirror group 2.
Part of the light scattered from the quartz tube and the light reflected from the mirror group 2 pass through the slit 4 and then enter the condensing lens 5. The slit 4 is disposed between the quartz tube and the condensing lens 5, and may be provided with a driving mechanism to adjust the size of the slit so as to adjust the incident light intensity to the condensing lens 5 in various sizes as appropriate.
The light flux passing through the condenser lens 5 is irradiated to the spectroscopic grating 6, whereby the incident light can be dispersed according to the wavelength of the incident light. According to different impurity components of the gas to be detected, the grating spectral bands can comprise ultraviolet, visible light, infrared bands, near infrared and middle and far infrared.
The photodetector 7 is configured to detect the scattered light from the spectroscopic grating 6, convert the detected scattered light into output information such as a digital voltage signal, and output the output information to the amplifying circuit 8, and the amplifying circuit 8 may include a primary amplifier, a secondary amplifier, and a tertiary amplifier to perform gas impurity component analysis as needed. Alternatively, the photodetector 7 may be a photomultiplier tube, a photodiode, an avalanche diode, a silicon photomultiplier SiPM, a photosensitive array diode, or a CCD linear array detector.
Compared with the prior art, the method has the advantages that the optical filter is used for selecting wave bands, only fewer gas impurity components can be detected, the light intensity is improved through the reflecting mirror group, the size of the slit is adjusted to adjust the incoming light intensity, the grating light splitting is used for splitting the characteristic peak of the components to be detected, which is emitted by plasma ionization, into a certain wave band of 185-1100nm, and the testing of more gas impurity components can be completed, so that the low detection limit is realized.
In the description of the present application, the meaning of "a plurality" is two or more, unless explicitly defined otherwise. Unless specifically stated or limited otherwise, the terms "mounted," "connected," "secured" and the like should be construed broadly, as they may be fixed, removable, or integral, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances. While the application has been described with reference to various specific embodiments, it should be understood that numerous changes could be made within the spirit and scope of the inventive concepts described. Accordingly, it is intended that the application not be limited to the described embodiments, but that it have the full scope defined by the language of the following claims.
Claims (10)
1. A full spectrum measurement based plasma emission spectrum detector, comprising: the ionization chamber (3), the reflector group (2) arranged on one side of the ionization chamber (3), the slit (4) arranged on the other side of the ionization chamber (3), the condensing lens (5) for transmitting light from the reflector group (2) and the slit (4), the spectroscope (6) for dispersing incident light from the condensing lens (5), the photodetector (7) for detecting dispersed light from the spectroscope (6), and the amplifying circuit (8) for receiving output information from the photodetector (7).
2. The full spectrum measurement based plasma emission spectrum detector according to claim 1, further comprising a power supply (1) for applying an electric field to the ionization gas chamber (3).
3. The full spectrum measurement based plasma emission spectrum detector according to claim 1, characterized in that the mirror group (2) is formed as a concave mirror.
4. The full spectrum measurement based plasma emission spectrum detector according to claim 1, characterized in that the ionization chamber (3) is made of quartz material or sapphire material, comprising a gas inlet for gas entry and a gas outlet for gas output.
5. The full spectrum measurement based plasma emission spectrum detector according to claim 1, characterized in that the slit (4) is provided with a driving mechanism for adjusting the slit size.
6. The full spectrum measurement based plasma emission spectrum detector of claim 1, wherein the grating spectral band comprises ultraviolet, visible, infrared, near infrared, mid far infrared.
7. The full spectrum measurement based plasma emission spectrum detector according to claim 1, wherein the photodetector (7) is configured to convert the detection result of the dispersed light from the spectroscopic grating (6) into a digital voltage signal and output the digital voltage signal to the amplifying circuit (8).
8. The full spectrum measurement based plasma emission spectrum detector of claim 1, wherein the photodetector is: photomultiplier tubes, photodiodes, avalanche diodes, silicon photomultiplier tubes SiPM, photosensitive array diodes, or CCD line array detectors.
9. The full spectrum measurement based plasma emission spectrum detector according to claim 1, characterized in that the amplifying circuit (8) comprises a primary amplifier, a secondary amplifier and a tertiary amplifier.
10. The full spectrum measurement based plasma emission spectrum detector according to claim 2, characterized in that the power supply (1) is a radio frequency power supply for forming a high frequency high voltage electric field of adjustable voltage and frequency around the ionization gas chamber (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310767805.8A CN116735569A (en) | 2023-06-27 | 2023-06-27 | Plasma emission spectrum detector based on full spectrum measurement |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310767805.8A CN116735569A (en) | 2023-06-27 | 2023-06-27 | Plasma emission spectrum detector based on full spectrum measurement |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116735569A true CN116735569A (en) | 2023-09-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310767805.8A Pending CN116735569A (en) | 2023-06-27 | 2023-06-27 | Plasma emission spectrum detector based on full spectrum measurement |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117310063A (en) * | 2023-09-27 | 2023-12-29 | 久兴隆工程技术无锡有限公司 | High frequency ionization detector |
-
2023
- 2023-06-27 CN CN202310767805.8A patent/CN116735569A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117310063A (en) * | 2023-09-27 | 2023-12-29 | 久兴隆工程技术无锡有限公司 | High frequency ionization detector |
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