CN116732597A - Atomic-level polishing system and method based on controllable growth of etching pits - Google Patents
Atomic-level polishing system and method based on controllable growth of etching pits Download PDFInfo
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- CN116732597A CN116732597A CN202310708869.0A CN202310708869A CN116732597A CN 116732597 A CN116732597 A CN 116732597A CN 202310708869 A CN202310708869 A CN 202310708869A CN 116732597 A CN116732597 A CN 116732597A
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- 238000005498 polishing Methods 0.000 title claims abstract description 113
- 238000000034 method Methods 0.000 title claims abstract description 16
- 238000005530 etching Methods 0.000 title claims abstract description 15
- 230000007246 mechanism Effects 0.000 claims abstract description 39
- 238000004140 cleaning Methods 0.000 claims abstract description 32
- 230000033001 locomotion Effects 0.000 claims abstract description 14
- 230000003287 optical effect Effects 0.000 claims abstract description 12
- 238000007789 sealing Methods 0.000 claims description 9
- 230000007797 corrosion Effects 0.000 claims description 7
- 238000005260 corrosion Methods 0.000 claims description 7
- 230000003746 surface roughness Effects 0.000 claims description 7
- 238000005286 illumination Methods 0.000 claims description 4
- 238000000992 sputter etching Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 238000007517 polishing process Methods 0.000 abstract description 5
- 239000007788 liquid Substances 0.000 abstract description 3
- 238000013461 design Methods 0.000 abstract description 2
- 238000012546 transfer Methods 0.000 abstract description 2
- 238000000691 measurement method Methods 0.000 abstract 1
- 238000001514 detection method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
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Abstract
An atomic-level polishing system and method based on etching pit controllable growth in the electrochemical polishing field, wherein the polishing system comprises a polishing groove, a cleaning groove, a feeding mechanism and an electrochemical polishing unit; the polishing groove comprises a revolution motor, a revolution motor base, a supporting rod rotating base and an illuminance feedback device; the cleaning tank can contain cleaning liquid; the feeding mechanism comprises a horizontal driving push rod, a vertical driving push rod and a gripper mechanism, and is mainly used for clamping the electrochemical polishing unit to transfer the space position; the electrochemical polishing unit comprises a supporting rod, a workpiece to be polished, a self-rotating motor, an electrolytic reaction cathode plate, a self-rotating motor controller, an upper connecting rod and a lower connecting rod, and is responsible for clamping the workpiece to polish or clean, and the self-rotating motion of the workpiece can be realized. The invention also discloses an electrochemical polishing method based on the polishing system, which comprises the following steps: polishing process design, movement form of a workpiece, on-line measurement method and the like; the invention can realize ultra-precise atomic-level polishing of the optical microstructure element.
Description
Technical Field
The invention relates to a polishing system and a polishing method in the field of electrochemical polishing, in particular to an electrochemical polishing system and a polishing method with a planetary motion form and an on-line detection of roughness of illuminance feedback.
Background
The polishing of an atomic-level smooth surface is an important development direction in the manufacturing field, for example, a critical optical element of an extreme ultraviolet lithography machine needs to achieve roughness below 0.1nm (atomic level), so as to improve the reflectivity of the extreme ultraviolet light and the light energy utilization rate. The electrochemical polishing has the advantages of non-contact, high efficiency, low cost and the like, and can realize ultra-precise polishing of the surfaces of various microstructures such as a grating structure, a Fresnel structure, a micro lens array and the like.
Electrochemical polishing, however, still has some problematic issues. In the polishing mechanism method, the electrochemical polishing has the uneven etching phenomenon caused by byproduct deposition, the roughness cannot be further improved due to the disordered growth of the electrochemical etching pits, the roughness is generally only about 50nm, and the polishing effect cannot meet the requirement of atomic-level roughness; in the aspect of roughness detection, a workpiece is in a corrosive liquid environment, a contact type measuring method can damage an instrument, non-contact type measurement cannot be accurately measured due to a solution environment, the conventional electrochemical polishing process can only adopt setting polishing parameters to finish open-loop control of the polishing process at present, repeated reworking and iterative polishing are required, and polishing efficiency is reduced. Electrochemical polishing needs to be improved in both improving polishing effect and achieving on-line detection.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides an atomic-level polishing system and method based on controllable growth of an etching pit, which can ensure the controllable growth of the etching pit by combining revolution and autorotation of a planetary motion mechanism; the change of the surface roughness of the microstructure can be fed back in real time through the detection of the illuminance of the reflected light.
The invention is realized by the following technical scheme:
the invention provides an atomic-level polishing system based on controllable growth of etching pits, which comprises a polishing groove, a cleaning groove, a feeding mechanism and an electrochemical polishing unit, wherein the polishing groove is arranged on the surface of the cleaning groove; the polishing groove adopts insulating and corrosion-resistant materials, and integrates a revolution motion motor, a revolution motor base, a supporting rod rotating base and an illumination feedback device, so that the polishing groove is a main space for electrochemical polishing of a workpiece and revolution around a shaft; the cleaning tank can contain electrochemical polishing cleaning liquid, and is a main space for cleaning a workpiece; the feeding mechanism comprises a horizontal driving push rod, a vertical driving push rod and a gripper mechanism and is mainly used for clamping the electrochemical polishing unit to transfer the space position; the electrochemical polishing unit comprises a supporting rod, a workpiece to be polished, a self-rotating motor, an electrolytic reaction cathode plate, a self-rotating motor controller, an upper connecting rod and a lower connecting rod, is responsible for clamping the workpiece to polish or clean, and can realize self-rotating movement of the workpiece;
further, in the invention, the laser transmitter in the illuminance feedback device is connected with the laser fixer, the laser fixer is connected with the U-shaped fixing frame, and the optical power meter is connected with the U-shaped fixing frame; the laser transmitters and the optical power meters are positioned at two sides of the U-shaped fixing frame; the laser transmitter can transmit laser to the surface of the workpiece to be polished, the laser is reflected by the surface and is collected to the surface of the optical power meter, so that the surface quality of the workpiece can be reflected, and the progress of electrochemical polishing reaction is reflected;
further, the feeding mechanism can realize transverse movement through a horizontally placed driving push rod, so that the position of the electrochemical polishing unit between the polishing groove and the cleaning groove is switched, vertical feeding movement can be realized through a vertically placed driving push rod, so that the electrochemical polishing unit enters or leaves the polishing groove and the cleaning groove, a gripper clamping mechanism is arranged at the front end, so that the electrochemical polishing unit is assembled and taken down, and the driving push rod and the grippers of the feeding mechanism are powered by a pneumatic device;
further, in the invention, the electrochemical polishing unit comprises a supporting rod, a workpiece to be polished, a self-rotating motor, an electrolytic reaction cathode plate, a self-rotating motor controller, an upper connecting rod and a lower connecting rod, is responsible for clamping the workpiece to polish or clean, and can realize the self-rotating motion of the workpiece; the middle part of the supporting rod is of a hollow structure, and the upper connecting rod penetrates through the hollow structure and is fixedly connected with the supporting rod; the upper part and the lower part of the supporting rod are respectively provided with a threaded hole, and the lower connecting rod passes through the threaded holes at the lower part and is fixedly connected with the supporting rod; the workpiece to be polished is fixed at the top of the self-rotating motor; the self-rotating motor is arranged in an insulating corrosion-resistant motor sealing shell, and the motor sealing shell is fixedly connected with one end of the lower connecting rod; the self-rotating motor controller is arranged in an insulating corrosion-resistant controller sealing shell, and the controller sealing shell is fixedly connected with the other end of the lower connecting rod; the cathode plate of the electrolytic reaction is fixedly connected with one end of the upper connecting rod; the self-rotating motor controller comprises a motor control board, a power supply and a wire, and the power supply and the self-rotating motor are connected with the motor control board through the wire.
The invention also provides an electrochemical polishing method of the atomic-level polishing system based on the controllable growth of the etching pit, which comprises the following steps: firstly, preparing a polishing solution and a cleaning solution; secondly, placing a workpiece to be polished in a workpiece clamp, and fixing the workpiece clamp; thirdly, the electrochemical polishing unit is clamped by the feeding mechanism and is sent to the cleaning tank for pre-cleaning; fourthly, the electrochemical polishing unit is clamped by the feeding mechanism and is sent to the polishing groove to carry out electrochemical ion etching on the surface to be polished of the workpiece; fifthly, the electrochemical polishing unit is clamped by the feeding mechanism and is sent to the cleaning tank for cleaning again;
further, in the fourth step, the rotation motor and the revolution motor are simultaneously started in the polishing stage, so that the workpiece to be polished moves in a revolution and rotation mode;
further, in the fifth step, an illuminance feedback device is used to measure the surface roughness of the workpiece on line, and the polishing completion condition is judged by using the surface roughness as an index.
Compared with the prior art, the invention has the following beneficial effects: the uniform removal and diffusion of etching byproducts are realized through a motion mode of combining revolution and rotation, and compared with an electrolyte stirring or workpiece linear motion mode in the traditional electrochemical polishing, the mechanism of revolution and rotation solves the non-uniformity in the polishing process in a kinematic layer, improves the polishing consistency and can realize an atomic-level smooth surface; the surface roughness of the workpiece is measured on line through an illuminance feedback device, a new way for in-situ monitoring and real-time regulating and controlling the roughness in the corrosive electrolyte is opened up, and the controllability of electrochemical polishing is improved. The system can realize atomic-level polishing effect with roughness below 0.1nm on different microstructure optical elements, has microstructure shape retention rate of more than 98%, and has higher polishing efficiency. Therefore, the invention has important application value in the fields of optical element manufacture and the like.
Drawings
FIG. 1 is a schematic diagram of an embodiment of the present invention;
FIG. 2 is a schematic perspective view of an embodiment of the present invention;
FIG. 3 is a schematic structural view of a feeding mechanism;
FIG. 4 is a schematic view of the structure of an electrochemical polishing unit;
FIG. 5 is a schematic diagram of an illumination feedback device;
the polishing device comprises a polishing tank 1, a cleaning tank 2, a cleaning tank 3, a feeding mechanism 4, an electrochemical polishing unit 401, a supporting rod 402, a workpiece to be polished 403, a self-rotating motor 404, an electrolytic reaction cathode plate 405, a self-rotating motor controller 406, an upper connecting rod 407, a lower connecting rod 5, a revolution motor 6, a revolution motor base 7, a supporting rod rotating base 8, an illuminance feedback device 9, a laser emitter 10, a laser fixer 11, an optical power meter 12, a U-shaped fixing frame 13, a horizontal driving push rod 14, a vertical driving push rod 15 and a hand grabbing mechanism.
Detailed Description
The following describes embodiments of the present invention in detail with reference to the accompanying drawings, and the embodiments and specific operation procedures of the present invention are given by this embodiment on the premise of the technical solution of the present invention, but the protection scope of the present invention is not limited to the following embodiments.
As shown in fig. 1 and 2, the system of the invention comprises a polishing tank 1, a cleaning tank 2, a feeding mechanism 3 and an electrochemical polishing unit 4; the polishing tank 1 and the cleaning tank 2 are arranged on a device base, the feeding mechanism 3 is arranged on the top end of the device through an aluminum profile, the horizontal precision of a cross beam and the vertical precision of a connecting rod are required to be ensured, the electrochemical polishing unit 4 is assembled in a polishing system through a gripper clamping mechanism 15 of the feeding mechanism, the feeding mechanism 3 can drive the electrochemical polishing unit to move in the horizontal and vertical directions, and the electrochemical polishing unit can be assembled or taken down through the gripper mechanism.
As shown in fig. 3 and 4, in the polishing process of the present invention, the feeding mechanism 3 conveys the electrochemical polishing unit 4 into the polishing bath 3 so that the support rod 1 is coaxial with the support rod rotating base 7, and finally the whole assembly is completed by the cooperation of the conical boss at the lower end of the support rod 1 and the conical groove in the middle of the support rod rotating base 7.
In the implementation of the method of the invention, the method comprises the following steps: firstly, preparing a polishing solution and a cleaning solution; secondly, placing a workpiece to be polished in a workpiece clamp, fixing the workpiece clamp, and starting a rotation motor 403 to drive the workpiece 402 to be polished to rotate as shown in fig. 5; thirdly, the electrochemical polishing unit is clamped by the feeding mechanism and is sent to the cleaning tank for pre-cleaning; fourthly, starting a revolution motor 5, driving an integral 8 of an illumination feedback device and a supporting rod rotating base 7 to revolve, so that a workpiece to be polished moves in a revolution and rotation mode at the same time, and a feeding mechanism clamps an electrochemical polishing unit to be sent to a polishing groove to carry out electrochemical ion etching on a surface to be polished of the workpiece; fifthly, the electrochemical polishing unit is clamped by the feeding mechanism and is sent to the cleaning tank for cleaning again; and the 'illuminance feedback' device 6 is adopted to measure the surface roughness of the workpiece on line, and the finish condition of polishing is judged by taking the surface roughness as an index.
The above embodiments are merely illustrative of the design principles and the application of the present invention and are not intended to limit the present invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
Claims (10)
1. An atomic-level polishing system based on controllable growth of etching pits is characterized by comprising a polishing groove (1), a cleaning groove (2), a feeding mechanism (3) and an electrochemical polishing unit (4);
the polishing groove (1) comprises a revolution motor (5), a revolution motor base (6), a supporting rod rotating base (7) and an illuminance feedback device (8);
the illuminance feedback device comprises a laser emitter (9), a laser fixer (10), an optical power meter (11) and a U-shaped fixing frame (12);
the feeding mechanism comprises a horizontal driving push rod (13), a vertical driving push rod (14) and a gripper mechanism (15);
the electrochemical polishing unit (4) comprises a supporting rod (401), a workpiece to be polished (402), a self-rotating motor (403), an electrolytic reaction cathode plate (404), a self-rotating motor controller (405), an upper connecting rod (406) and a lower connecting rod (407).
2. The atomic-scale polishing system based on the controllable growth of etching pits according to claim 1, wherein the polishing tank is made of insulating and corrosion-resistant materials; the polishing groove is integrated with a revolution motor (5), a revolution motor base (6), a supporting rod rotating base (7) and an illuminance feedback device (8); the revolution motor (5) is positioned below the polishing groove (1) and is fixedly connected with the revolution motor base (6) through an upper plane; the support rod rotating base (7) is radially fixedly connected with the revolution motor base (6) through a boss, and the support rod rotating base (7) is axially fixed with the upper rotating shaft of the revolution motor (5) through a fastening bolt; the U-shaped fixing frame (12) of the illumination feedback device (8) is axially fixed with the lower rotating shaft of the revolution motor (5) through a fastening bolt.
3. The atomic-level polishing system based on the controllable growth of etching pits according to claim 1, characterized by an integrated "illuminance feedback" device (8) of the polishing bath, wherein the laser emitter (9) is connected with the laser holder (10) by a fastening bolt, the laser holder (10) is connected with the U-shaped holder (12) by a bolt and nut, and the optical power meter (11) is connected with the U-shaped holder (12) by a bolt and nut; the laser transmitters (9) and the optical power meters (11) are positioned at two sides of the U-shaped fixing frame; the laser transmitter (9) can transmit laser to the surface of the workpiece (402) to be polished, and the laser is collected to the surface of the optical power meter (11) through surface reflection.
4. The atomic-scale polishing system based on the controllable growth of etching pits according to claim 1, characterized in that the feeding mechanism can realize the lateral movement by a horizontally placed driving push rod (13), thereby realizing the position switching of the electrochemical polishing unit between the polishing tank and the cleaning tank; the feeding mechanism can realize vertical feeding movement through a vertically arranged driving push rod (14), so that the electrochemical polishing unit enters or leaves the polishing groove and the cleaning groove; the front end of the feeding mechanism is provided with a gripper clamping mechanism (15), so that the electrochemical polishing unit is assembled and taken down; the driving push rod and the gripper of the feeding mechanism are powered by a pneumatic device.
5. The atomic-level polishing system based on etching pit controllable growth according to claim 1, wherein the electrochemical polishing unit (4) is characterized in that the middle part of the supporting rod (401) is a hollow structure, and the upper connecting rod (406) passes through the hollow structure and is fixedly connected with the supporting rod (401); the upper part and the lower part of the support rod (401) are respectively provided with a threaded hole, and the lower connecting rod (407) passes through the threaded holes at the lower part and is fixedly connected with the support rod (401);
the workpiece (402) to be polished is fixed at the top of the self-rotating motor (403); the self-rotating motor (403) is arranged in an insulating corrosion-resistant motor sealing shell, and the motor sealing shell is fixedly connected with one end of a lower connecting rod (407); the self-rotating motor controller (405) is arranged in an insulating corrosion-resistant controller sealing shell, and the controller sealing shell is fixedly connected with the other end of the lower connecting rod (407);
the electrolytic reaction cathode plate (404) is fixedly connected with one end of the upper connecting rod (406);
the workpiece (402) to be polished, the self-rotating motor (403) and the electrolytic reaction cathode plate (404) are coaxially arranged, and the supporting rod (401), the revolution motor (5), the revolution motor base (6) and the supporting rod rotating base (7) are coaxially arranged;
the self-rotation motor controller (405) comprises a motor control board, a power supply and a wire, and the power supply and the self-rotation motor (403) are connected with the motor control board through the wire.
6. Electrochemical polishing unit (4) according to claim 1, characterized in that the workpiece (402) to be polished is fixed on top of the rotation motor (403) by means of bolting and screwing holes, and the upper connecting rod (406) and the lower connecting rod (407) are both fixedly connected with the supporting rod (401) by means of bolting and screwing holes.
7. Electrochemical polishing unit (4) according to claim 1, characterized in that the connection of the workpiece (402) to be polished and the rotating shaft of the rotating motor (403) is provided with insulating and corrosion-resistant sealing rings.
8. A method of electrochemical polishing by an etch pit controlled growth based atomic scale polishing system according to claim 1, comprising the steps of:
firstly, preparing a polishing solution and a cleaning solution;
secondly, placing a workpiece to be polished in a workpiece clamp, and fixing the workpiece clamp;
thirdly, the electrochemical polishing unit is clamped by the feeding mechanism and is sent to the cleaning tank for pre-cleaning;
fourthly, the electrochemical polishing unit is clamped by the feeding mechanism and is sent to the polishing groove to carry out electrochemical ion etching on the surface to be polished of the workpiece;
and fifthly, the electrochemical polishing unit is clamped by the feeding mechanism and is sent to the cleaning tank for cleaning again.
9. Electrochemical ion polishing method according to claim 8, characterized in that in said step four, the rotation motor and the revolution motor (5) are simultaneously activated during the polishing phase, so that the workpiece to be polished moves in the form of "planetary motion".
10. The electrochemical ion polishing method according to claim 8, wherein in the fourth step, an "illuminance feedback" device (8) is used to measure the surface roughness of the workpiece on line, and the polishing completion is judged using this as an index.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310708869.0A CN116732597A (en) | 2023-06-15 | 2023-06-15 | Atomic-level polishing system and method based on controllable growth of etching pits |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310708869.0A CN116732597A (en) | 2023-06-15 | 2023-06-15 | Atomic-level polishing system and method based on controllable growth of etching pits |
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| Publication Number | Publication Date |
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| CN116732597A true CN116732597A (en) | 2023-09-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310708869.0A Pending CN116732597A (en) | 2023-06-15 | 2023-06-15 | Atomic-level polishing system and method based on controllable growth of etching pits |
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| CN (1) | CN116732597A (en) |
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- 2023-06-15 CN CN202310708869.0A patent/CN116732597A/en active Pending
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