CN116730283A - Preparation method and application of piezoresistive angle sensor - Google Patents
Preparation method and application of piezoresistive angle sensor Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 35
- 239000010703 silicon Substances 0.000 claims abstract description 35
- 230000000694 effects Effects 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 18
- 238000005530 etching Methods 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000001259 photo etching Methods 0.000 claims abstract description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 8
- 238000005468 ion implantation Methods 0.000 claims abstract description 5
- 238000000137 annealing Methods 0.000 claims abstract description 4
- 239000011248 coating agent Substances 0.000 claims abstract description 4
- 238000000576 coating method Methods 0.000 claims abstract description 4
- 238000001465 metallisation Methods 0.000 claims abstract description 4
- 230000003647 oxidation Effects 0.000 claims abstract description 4
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 238000006243 chemical reaction Methods 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000005259 measurement Methods 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 description 7
- 230000006698 induction Effects 0.000 description 7
- 238000001514 detection method Methods 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/30—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring angles or tapers; for testing the alignment of axes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0292—Sensors not provided for in B81B2201/0207 - B81B2201/0285
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Abstract
The invention discloses a preparation method and application of a piezoresistive angle sensor, wherein the preparation method comprises the following steps: the method comprises the following steps: performing thermal oxidation treatment on the surface of the silicon wafer to enable an oxide layer to grow on the surface of the silicon wafer; carrying out photoetching and oxide layer body etching on a region of the silicon wafer, which is required to form the piezoresistive strip, according to the product structure, and etching the region to the silicon substrate; performing ion implantation on the silicon wafer to enable the area which is not protected by the silicon oxide to form a piezoresistive strip with a piezoresistive effect; removing the silicon oxide film and rapidly annealing; carrying out metallization coating on a silicon wafer; photoetching and etching the metal film to form a metal lead; and connecting the piezoresistive strips with the same resistance value by the metal lead to form a Wheatstone bridge, so as to obtain a finished product. The piezoresistive angle sensor is arranged in a vehicle-mounted laser radar micromirror and used for reading the angle change of the micromirror. The piezoresistive angle sensor prepared by the invention has the advantages of simple structure, low cost and high measurement precision.
Description
Technical Field
The invention relates to the technical field of micro-electromechanical technology, in particular to a preparation method and application of a piezoresistive angle sensor.
Background
Lidar, millimeter wave radar and cameras are three key sensing technologies of the accepted autopilot technology. Compared with millimeter wave radar and cameras, the laser radar technology becomes a preferred technical route for L3/L4 level automatic driving by more powerful spatial three-dimensional resolution capability.
The laser radar technology has the characteristics of high resolution, high precision, strong active interference resistance and the like, and is an optimal unmanned technical route on the aspects of products and technologies, however, the mass production breakthrough of the laser radar becomes a key node for realizing the automatic driving technology. There are four main technical routes for current lidar: conventional mechanical lidar, MEMS, flash, OPA. The characteristics of the traditional mechanical radar are different, the reliability of the traditional mechanical radar is low, and the price is high; in the latter three solid-state laser radar, the MEMS micro-electromechanical system can directly integrate a micro-vibration mirror with very exquisite volume on a silicon-based chip, and flexibly control the rotation of the micro-vibration mirror through a circuit, so as to deflect laser emitted by a laser emitter, realize the external scanning and form a high-density point cloud image by virtue of ultrahigh scanning speed. On the premise of meeting the performance of the vehicle-standard laser radar, the MEMS laser radar is the most hopeful technical scheme for landing with reasonable price and quick realization of mass capacity.
MEMS lidar currently faces two major technical challenges: firstly, ensuring the angle precision; and secondly, passing the vehicle standard level test. The mainstream methods capable of directly detecting the angle of the MEMS vibrating mirror are a photoelectric detection method, an induced electromotive force method and an induced capacitance method.
In the photoelectric detection method, the relative positions of a micro-mirror, a laser and a photoelectric detector are fixed, the photoelectric detector is arranged in a scanning path of the micro-torsion mirror, and when laser rays emitted by the laser are reflected by the micro-torsion mirror and then scanned by a first photoelectric detector, the first photoelectric detector captures a position signal of the micro-torsion mirror, and therefore the amplitude and the phase of vibration of the micro-torsion mirror are calculated. The method has the advantages of complex system, high manufacturing cost, huge assembly and debugging cost, low integration level, difficulty in realizing large-scale mass production and more difficulty in passing the vehicle-scale test.
The induced electromotive force method indirectly calculates the rotation angle of the micro mirror by measuring the induced electromotive force generated by the cutting motion of the induction coil in the magnetic field along with the rotation of the mirror surface, and most of the method is suitable for electromagnetically driving the MEMS micro mirror and has the characteristics of low precision and high delay.
Induction capacitance method: the induction capacitance method forms an induction capacitance by forming a rotating comb structure on the micromirror, and in the rotating process, the change of the relative area between the induction capacitance and the fixed induction comb forms the induction capacitance which changes along with the change of the rotation angle of the rotating comb. The method is commonly applied to the MEMS micro-mirror driven by static electricity, has low compatibility with other MEMS micro-mirrors driven by other driving modes, and has the defects of low signal-to-noise ratio and low measurement precision.
Disclosure of Invention
The invention aims to provide a preparation method and application of a piezoresistive angle sensor. The piezoresistive angle sensor prepared by the invention has the advantages of simple structure, low cost and high measurement precision.
The technical scheme of the invention is as follows: a preparation method of a piezoresistive angle sensor comprises the following steps:
step 1, performing thermal oxidation treatment on the surface of a silicon wafer to enable an oxide layer to grow on the surface of the silicon wafer;
step 2, carrying out photoetching and oxide layer body etching on the region of the silicon wafer, which is required to form the piezoresistive strip, according to the product structure, and etching the region to the silicon substrate;
step 3, carrying out ion implantation on the silicon wafer to enable the area which is not protected by the silicon oxide to form a piezoresistive strip with piezoresistive effect;
step 4, removing the silicon oxide film, and rapidly annealing;
step 5, carrying out metallization coating on the silicon wafer;
step 6, photoetching and etching the metal film to form a metal lead;
and 7, connecting the piezoresistive strips with the same resistance value by the metal lead to form a Wheatstone bridge, so as to obtain a finished product.
In the preparation method of the piezoresistive angle sensor, in the step 1, the silicon wafer is placed in a reaction tube made of quartz glass, the reaction tube is heated to 900-1200 ℃ by a resistance wire heating furnace, oxygen or water vapor passes through the reaction tube, and the air flow speed is 1 cm/s, so that the surface of the silicon wafer is subjected to chemical reaction.
The piezoresistive angle sensor is arranged in the vehicle-mounted laser radar micro mirror and used for reading the angle change of the micro mirror.
In the application of the piezoresistive angle sensor, the piezoresistive effect of the piezoresistive strip is converted into the resistance value change rate by the Wheatstone bridge, then the resistance value change rate is connected with the A/D converter after passing through the filter circuit and the amplifying circuit, then the output signal of the A/D converter is connected with the MCU or the FPGA, and finally the MCU or the FPGA processes the signal to obtain the angle information.
The piezoresistive effect of the piezoresistive strip in the application of the piezoresistive angle sensor is expressed as:
ΔR/R＝(1+2u+ΠE)×ε
wherein: ΔR is the resistance change value measured according to the piezoresistive effect and the Wheatstone bridge, and R is the initial impedance of the resistor; u is poisson's ratio; epsilon is the stress deformation, epsilon=ρ×θ, ρ is the cross-sectional torsional radius, θ is the torsional angle, E is the elastic modulus, and under the action of shear stress, E should be replaced by the shear modulus G;
θ＝(AR/R)/(IIGρ)
pi is the piezoresistive coefficient matrix:
wherein pi is used for the piezoresistance coefficient of each crystal direction along the crystal axis coordinate system ij Representing the relative change in resistance along the x, y and z coordinate directions with i equal to 1, 2 and 3, and with i equal to 4, 5 and 6 representing the relative change in resistance along the perpendicular x, y and z coordinate directions; j is equal to the tensile stress in the x, z and y directions denoted by 1, 2 and 3 and j is equal to 4, 5 and 6 denoted the shear stress in the perpendicular x, z and y directions.
Compared with the prior art, the piezoresistive angle sensor preparation method forms the doped piezoresistive strip on the surface of the movable silicon structure by utilizing an ion implantation mode, converts the piezoresistive strip strain caused by torsion, compression and stretching of the movable silicon structure into the resistance change rate by utilizing the piezoresistive effect of the doped silicon, reads the resistance change rate through the Wheatstone bridge, has the advantages of simplifying the preparation method, and has the advantages of simple structure, low cost and high measurement precision. The invention is applied, the strain caused by micro-mirror torsion can be converted into electric reading of resistance value change by utilizing the piezoresistance effect area obtained by doping partial area on the silicon-based material, the electric reading is further calibrated as the angle change condition of the micro-mirror torsion beam, the closed loop control of the angle in the micro-mirror vibration process can be realized, and the scanning precision of the MEMS laser radar is further improved. The invention has simple structure and low cost, and the cost of other detection devices or equipment such as a laser, a photoelectric detector and the like is abandoned; the measuring precision is as high as 0.01 degrees, the applicability is strong, the measuring device can be integrated in MEMS vibrating mirrors with different driving modes and other micro-actuator chips, a wide prospect is provided for integrating angle sensors on the vehicle-gauge MEMS vibrating mirrors, and a proper solution is provided for vehicle-gauge mass production of high-precision laser radar products.
Drawings
FIG. 1 is a schematic flow chart of embodiment 1 of the present invention
FIG. 2 is a schematic diagram of a Wheatstone bridge configuration of a piezoresistive angle sensor in accordance with example 1 of the present invention;
fig. 3 is a schematic flow chart of embodiment 2 of the present invention.
Detailed Description
The invention is further illustrated by the following figures and examples, which are not intended to be limiting.
Example 1: a preparation method of a piezoresistive angle sensor, as shown in figure 1, comprises the following steps:
step 1, performing thermal oxidation treatment on the surface of a silicon wafer to enable an oxide layer to grow on the surface of the silicon wafer; the thermal oxygen treatment is to place the silicon wafer in a reaction tube made of quartz glass, the reaction tube is heated to 900-1200 ℃ by a resistance wire heating furnace, oxygen or water vapor passes through the reaction tube, and the air flow speed is 1 cm/s, so that the surface of the silicon wafer is subjected to chemical reaction.
Step 2, photoetching and oxide layer body etching are carried out on the area, in which the piezoresistive strip is required to be formed, in the silicon wafer according to the product structure (the product structure is determined according to the specific design of the micro mirror), and etching is carried out until the silicon substrate;
step 3, carrying out ion implantation on the silicon wafer to enable the area which is not protected by the silicon oxide to form a piezoresistive strip with piezoresistive effect;
step 4, removing the silicon oxide film, and rapidly annealing;
step 5, carrying out metallization coating on the silicon wafer;
step 6, photoetching and etching the metal film to form a metal lead;
and 7, connecting the piezoresistive strips with the same resistance value by the metal lead to form a Wheatstone bridge, so as to obtain a finished product. As shown in fig. 2, the wheatstone bridge is a device composed of 4 resistors for precisely measuring the resistance value of one of the resistors (the resistance values of the remaining 3 resistors are known). The Wheatstone bridge measures the change of physical quantity by utilizing the change of resistance, and the singlechip collects and processes the voltage at two ends of the variable resistance, so that the corresponding change of the physical quantity can be calculated, and the measuring method is a measuring mode with high precision.
The piezoresistive strip of this embodiment uses the piezoresistive effect of doped silicon (the phenomenon that the resistivity of monocrystalline silicon, diffusion doped silicon and polycrystalline silicon materials changes obviously after being stressed is called as piezoresistive effect), converts the piezoresistive strain caused by torsion, compression and extension of a movable silicon structure into the resistance change rate (the strength of the piezoresistive effect can be represented by the piezoresistive coefficient pi, which is defined as the relative change of the resistivity under the unit stress), and has anisotropic characteristics, and the change of the resistivity can be different when stress is applied along different directions and current is passed along different directions.
For example, N-type silicon is measured at room temperature, stress is applied in the 100 direction, and the piezoresistive coefficient pi of current is applied in this direction 100 ＝102.2×10 -11 m 2 N, while current is applied in 010 direction, its piezoresistive coefficient pi 010 ＝53.7Ⅹ10 -11 m 2 /N)。
Example 2: the piezoresistive angle sensor prepared in the embodiment 1 is installed in a vehicle-mounted laser radar micromirror for reading the angle change of the micromirror. As shown in FIG. 3, the angle is read by converting the piezoresistive effect of the piezoresistive strip into a resistance value change rate by a Wheatstone bridge, then passing the resistance value change rate through a filter circuit and an amplifying circuit, then connecting the output signal of the amplifying circuit into an A/D converter, connecting the output signal of the A/D converter into an MCU or an FPGA, and finally processing the signal by the MCU or the FPGA to obtain the angle information.
Specifically, the piezoresistive effect of the piezoresistive strip is expressed as:
ΔR/R＝(1+2u+ΠE)×ε
wherein: ΔR is the resistance change value measured according to the piezoresistive effect and the Wheatstone bridge, and R is the initial impedance of the resistor; u is poisson's ratio, where (1+2u) < < IIE, can be ignored; epsilon is the stress deformation, epsilon=ρ×θ, ρ is the cross-sectional torsional radius, θ is the torsional angle, E is the elastic modulus, and under the action of shear stress, E should be replaced by the shear modulus G;
θ＝(ΔR/R)/(IIGp)
pi is the piezoresistive coefficient matrix:
wherein pi is used for the piezoresistance coefficient of each crystal direction along the crystal axis coordinate system ij Representing the relative change in resistance along the x, y and z coordinate directions with i equal to 1, 2 and 3, and with i equal to 4, 5 and 6 representing the relative change in resistance along the perpendicular x, y and z coordinate directions; j is equal to the tensile stress in the x, z and y directions denoted by 1, 2 and 3 and j is equal to 4, 5 and 6 denoted the shear stress in the perpendicular x, z and y directions.
The invention is applied, the strain caused by micro-mirror torsion can be converted into electric reading of resistance value change by utilizing the piezoresistance effect area obtained by doping partial area on the silicon-based material, the electric reading is further calibrated as the angle change condition of the micro-mirror torsion beam, the closed loop control of the angle in the micro-mirror vibration process can be realized, and the scanning precision of the MEMS laser radar is further improved.
Claims (5)
1. A preparation method of a piezoresistive angle sensor is characterized in that: the method comprises the following steps:
step 1, performing thermal oxidation treatment on the surface of a silicon wafer to enable an oxide layer to grow on the surface of the silicon wafer;
step 2, carrying out photoetching and oxide layer body etching on the region of the silicon wafer, which is required to form the piezoresistive strip, according to the product structure, and etching the region to the silicon substrate;
step 3, carrying out ion implantation on the silicon wafer to enable the area which is not protected by the silicon oxide to form a piezoresistive strip with piezoresistive effect;
step 4, removing the silicon oxide film, and rapidly annealing;
step 5, carrying out metallization coating on the silicon wafer;
step 6, photoetching and etching the metal film to form a metal lead;
and 7, connecting the piezoresistive strips with the same resistance value by the metal lead to form a Wheatstone bridge, so as to obtain a finished product.
2. The method of manufacturing a piezoresistive angle sensor according to claim 1, characterized in that: in the step 1, the silicon wafer is placed in a reaction tube made of quartz glass, the reaction tube is heated to 900-1200 ℃ by a resistance wire heating furnace, oxygen or water vapor passes through the reaction tube, and the air flow speed is 1 cm/s, so that the surface of the silicon wafer is subjected to chemical reaction.
3. Use of a piezoresistive angle sensor according to claim 1 or 2, characterized in that: and the piezoresistive angle sensor is arranged in the vehicle-mounted laser radar micromirror and is used for reading the angle change of the micromirror.
4. Use of a piezoresistive angle sensor according to claim 3, characterized in that: the angle reading is that the piezoresistive effect of the piezoresistive strip is converted into the change rate of the resistance value by the Wheatstone bridge, then the change rate of the resistance value is connected with the A/D converter after passing through the filter circuit and the amplifying circuit, then the output signal of the A/D converter is connected with the MCU or the FPGA, and finally the MCU or the FPGA processes the signal to obtain the angle information.
5. The use of a piezoresistive angle sensor according to claim 4, characterized in that: the piezoresistive effect of the piezoresistive strip is expressed as:
ΔR/R＝(1+2u+ΠE)×ε
wherein: ΔR is the resistance change value measured according to the piezoresistive effect and the Wheatstone bridge, R is the initial impedance of the resistor; u is poisson's ratio; epsilon is stress deformation, epsilon=ρ×θ, ρ is the cross-sectional torsional radius, θ is the torsional angle, E is the elastic modulus, and under the action of shear stress, E is replaced by the shear modulus G;
θ＝(ΔR/R)/(ΠGρ)；
pi is the piezoresistive coefficient matrix:
wherein pi is used for the piezoresistance coefficient of each crystal direction along the crystal axis coordinate system ij Representing the relative change in resistance along the x, y and z coordinate directions with i equal to 1, 2 and 3, and with i equal to 4, 5 and 6 representing the relative change in resistance along the perpendicular x, y and z coordinate directions; j is equal to the tensile stress in the x, z and y directions denoted by 1, 2 and 3 and j is equal to 4, 5 and 6 denoted the shear stress in the perpendicular x, z and y directions.
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| CN202310947414.4A CN116730283A (en) | 2023-07-31 | 2023-07-31 | Preparation method and application of piezoresistive angle sensor |
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| CN202310947414.4A CN116730283A (en) | 2023-07-31 | 2023-07-31 | Preparation method and application of piezoresistive angle sensor |
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