CN116720329A - B10 service life prediction method of IGBT under multi-failure mode physical coupling effect - Google Patents
B10 service life prediction method of IGBT under multi-failure mode physical coupling effect Download PDFInfo
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Abstract
The application discloses a B10 life prediction method of an IGBT under the physical coupling effect of multiple failure modes, belonging to the technical field of IGBT life prediction, wherein the method comprises the following steps: carrying out a power cycle experiment of fixed junction temperature fluctuation aiming at the IGBT; fitting a life prediction model of the bonding wire and the solder layer; measuring and fitting an on-state voltage drop and crusting thermal resistance degradation curve of the IGBT; establishing a degradation constraint equation of the IGBT under the physical coupling action of multiple failure modes; and iteratively calculating the service life of the B10 of the IGBT under the physical coupling action of multiple failure modes. The method can realize the visualization of the IGBT failure probability, is favorable for the expansion of the IGBT reliability management, and greatly improves the reliability of the system where the IGBT is positioned.
Description
Technical Field
The application belongs to the technical field of IGBT life prediction, and particularly relates to a B10 life prediction method of an IGBT under the physical coupling effect of multiple failure modes.
Background
The insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) is used as an important power semiconductor switch in the current electrical appliance field, has been widely applied to various fields including rail transit, smart grids, aerospace, electric vehicles, new energy equipment and the like, and has important application in the technical fields of clean energy, flexible direct current transmission and the like. Since IGBTs are voltage controlled power switches, IGBTs tend to withstand voltages of hundreds or even thousands of volts when operated. The high-voltage high-power working environment not only puts high requirements on the insulation performance of the IGBT module package, but also often causes great loss of the IGBT in the running process. These losses are transferred outwards in the form of thermal energy, which increases the temperature of the IGBT chip and reduces the reliability of the IGBT module.
Life prediction of IGBT modules is an important content of reliability research. However, the conventional lifetime prediction method has several drawbacks: (1) The influence of the random probability distribution on the lifetime is not taken into account; (2) And carrying out life prediction only for a specific failure model of the IGBT module. Aging and failure of the material are caused by cracks, and generation and expansion of the cracks are random events. Therefore, the failure of the IGBT is also a random event, subject to some probability distribution. And the average service life of the IGBT can be calculated through probability distribution. And the coupling relation between the bonding wire and the solder layer is very complex. Currently, further research is needed for predicting the service life of an IGBT module under the effect of coupling of the failure modes.
Disclosure of Invention
Aiming at the defects or improvement demands of the prior art, the application provides a B10 service life prediction method of an IGBT under the physical coupling action of multiple failure modes.
In order to achieve the above object, the present application provides a method for predicting the lifetime of B10 of an IGBT under the effect of physical coupling in multiple failure modes, including:
carrying out a power cycle experiment of fixed junction temperature fluctuation aiming at the IGBT;
fitting a life prediction model of the bonding wire and the solder layer based on data obtained by a power cycle experiment;
measuring and fitting an on-state voltage drop and crusting thermal resistance degradation curve of the IGBT;
establishing a degradation constraint equation of the IGBT under the physical coupling action of multiple failure modes based on a life prediction model of the bonding wire and the solder layer and an on-state voltage drop and crusting thermal resistance degradation curve of the IGBT;
and carrying out iterative computation on the degradation constraint equation to obtain the service life of the B10 of the IGBT under the physical coupling action of multiple failure modes.
In some alternative embodiments, the performing a power cycling experiment for IGBT with fixed junction temperature fluctuations includes:
building an IGBT power circulation experiment platform, wherein the IGBT module generates power loss by using conduction voltage drop through circulating current in a heating stage, so as to realize temperature rise, and accelerates the cooling of the IGBT in a water cooling mode in a cooling stage;
and setting the upper limit and the lower limit of the junction temperature of the chip, and carrying out a power cycle experiment for fixing the fluctuation of the junction temperature.
In some alternative embodiments, the data obtained based on the power cycle experiment fits a bond wire and solder layer lifetime prediction model, comprising:
performing power cycle experiments of a plurality of groups of different temperature loads to obtain failure data;
and fitting a life prediction model of each of the bonding wire and the solder layer based on the failure data.
In some alternative embodiments, the method comprisesFitting a life prediction model of each of the bonding wire and the solder layer, wherein N f-bw Predicted lifetime of bond wire, N f-sl Representing the predicted lifetime of the solder layer c bw 、c sl 、d bw D sl Representing fitting parameters, T m Respectively, the junction temperature of the chips.
In some alternative embodiments, the measuring and fitting the IGBT on-state voltage drop versus crusting thermal resistance degradation curve includes:
setting a sampling period, and measuring the conduction voltage drop of the IGBT based on a small current method;
measuring the temperature of the outer sides of the IGBT module chip and the substrate, and calculating the heat resistance of the IGBT module crust by combining the power loss;
recording the conduction voltage drop and the crusting thermal resistance of each sampling period until the conduction voltage drop and the crusting thermal resistance are invalid, drawing degradation data of the conduction voltage drop and the thermal resistance into a degradation curve, and fitting.
In some alternative embodiments, the method comprisesObtaining the thermal resistance R of the Insulated Gate Bipolar Transistor (IGBT) module crust th Wherein U is ces To turn on the voltage drop T j For chip junction temperature, T c Is the shell temperature of the substrate, I c Is collector current;
from the following componentsFitting an IGBT on-state voltage drop and crusting thermal resistance degradation curve, wherein U is as follows ces-0 And R is th-0 Respectively U ces And R is th Initial value of a bw 、a sl 、b bw 、b sl For parameters to be fitted, D bw And D sl The ageing degree of the bonding wire and the solder layer, respectively,/->N is the number of IGBT power cycles.
In some alternative embodiments, the establishing a degradation constraint equation of the IGBT under the multi-failure mode physical coupling includes:
according to a life prediction model of the bonding wire and the solder layer, obtaining related parameters of a constraint equation by an IGBT on-state pressure drop and crusting thermal resistance degradation curve, wherein the related parameters comprise: a represents a Lesit life prediction model non-exponential term, b represents a negative number of Lesit life prediction model exponential term index, c represents initial absolute temperature, d represents U ces Constant coefficient of change curve index term, e represents U ces The index of the change curve index term, f, represents D bw Conversion coefficient of constant coefficient at conversion time, g represents D bw The index conversion coefficient at the time of conversion and h represents R th An index of a change curve index term;
and measuring related parameters of constraint equations comprising the initial value of the chip junction temperature and the ambient temperature, and establishing a degradation constraint equation.
In some alternative embodiments, the method comprisesEstablishing a degradation constraint equation, wherein r is as follows a-bw Indicating the burn-in rate of the bond wire.
In some alternative embodiments, the iteratively calculating the degradation constraint equation for the B10 lifetime of the IGBT under the multi-failure mode physical coupling comprises:
iterative calculation is carried out on the degradation constraint equation, and a bonding wire and a solder layer D are obtained bw And D sl A change curve;
based on bonding wire and solder layer D bw And D sl Calculating a bonding lead and solder layer failure probability change curve according to the change curve;
calculating the overall failure probability of the IGBT module according to the failure probability of the bonding wire and the solder layer;
taking the point with the overall failure probability of 10%, and the corresponding cycle number is the service life of B10 of the IGBT.
In some alternative embodiments, the method comprisesCalculating bonding wiresAnd a solder layer failure probability curve, wherein m bw And m sl For the shape parameters in the Weibull distribution of the bonding wires and solder layers, F bw (D bw ) Indicating cumulative failure rate of bonding wire, F sl (D sl ) Indicating the cumulative failure rate of the solder layer;
from F IGBT (N)＝1-[1-F bw (D bw )][1-F sl (D sl )]Calculating the overall failure probability of the IGBT module, wherein F IGBT (N) represents the cumulative failure rate of the IGBT module as a whole.
In general, the above technical solutions conceived by the present application, compared with the prior art, enable the following beneficial effects to be obtained:
according to the B10 service life prediction method of the IGBT under the physical coupling effect of multiple failure modes, the degradation degree of the bonding wire and the solder layer is monitored, the failure probability of the bonding wire and the solder layer is estimated, the integral cumulative failure rate change curve of the IGBT module is finally calculated, and the cycle number with the cumulative failure rate of 10% is taken as the B10 service life of the IGBT module. Compared with the prior art, the method has the advantages of high prediction precision, low failure rate of the IGBT during the rated life and the like.
Drawings
Fig. 1 is a schematic diagram of an IGBT power cycle experiment provided in an embodiment of the application;
FIG. 2 is a schematic diagram of temperature control according to an embodiment of the present application;
fig. 3 is a schematic diagram of a B10 lifetime establishment procedure of an IGBT according to an embodiment of the present application.
Detailed Description
The present application will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present application more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application. In addition, the technical features of the embodiments of the present application described below may be combined with each other as long as they do not collide with each other.
The B10 service life prediction method of the IGBT under the physical coupling effect of multiple failure modes provided by the embodiment of the application comprises the following steps:
(1) Carrying out a power cycle experiment of fixed junction temperature fluctuation aiming at the IGBT;
(2) Fitting a life prediction model of the bonding wire and the solder layer based on data obtained by a power cycle experiment;
(3) Measuring and fitting an on-state voltage drop and crusting thermal resistance degradation curve of the IGBT;
(4) Establishing a degradation constraint equation of the IGBT under the physical coupling action of multiple failure modes based on a life prediction model of the bonding wire and the solder layer and an on-state voltage drop and crusting thermal resistance degradation curve of the IGBT;
(5) And carrying out iterative computation on the degradation constraint equation to obtain the service life of the B10 of the IGBT under the physical coupling action of multiple failure modes.
Further, in step (1), a specific method of performing a power cycle experiment of fixing junction temperature fluctuation for the IGBT is as follows:
(1-1) constructing an IGBT power circulation experiment platform, wherein the IGBT module circulates large current in a heating stage, enough power loss is generated by using conduction voltage drop to realize temperature rise, the IGBT is accelerated to be cooled in a cooling stage in a water cooling mode, and the principle of the experiment platform is shown in a figure 1;
(1-2) setting upper and lower limits of the junction temperature of the chip, controlling the junction temperature of the IGBT chip through the temperature controller and the relay, and when the junction temperature of the chip reaches the upper limit T jmax And when the temperature controller controls the relay to be turned off, the IGBT is turned off, and the water cooler starts to cool the IGBT while stopping heating. When the junction temperature of the chip reaches the lower limit T jmin When the temperature controller re-controls the relay to be switched on, the water cooler stops working, the IGBT is switched on, and heating is restarted, as shown in figure 2;
(1-3) performing a power cycle experiment for fixing junction temperature fluctuation, and recording a conduction voltage drop U ces Increase cycle times of 5% as bond wire life, thermal resistance R th The 20% increase in cycle times is the solder layer life.
Further, in the step (2), a specific method for fitting the life prediction model of the bonding wire and the solder layer is as follows:
(2-1) performing power cycle experiments of a plurality of groups of different temperature loads to obtain failure data;
(2-2) fitting a life prediction model of each of the bonding wire and the solder layer based on the failure data.
Wherein the life prediction model is shown in the following formula (1).
Wherein N is f-bw 、N f-sl The predicted lifetimes of the bond wires and the solder layer are shown, respectively. c bw 、c sl 、d bw 、d sl To fit parameters, T m Indicating the chip junction temperature.
Further, in the step (3), the specific method for measuring and fitting the on-state voltage drop and crusting thermal resistance degradation curve of the IGBT is as follows:
(3-1) setting a sampling period to T;
(3-2) measuring the conduction voltage drop of the IGBT based on a small current method, putting the IGBT into a special test platform, putting the IGBT in a conduction state, enabling the IGBT to flow 100mA of small current, and measuring the collector-emitter voltage U at the moment ces As a value of the on-voltage drop;
(3-3) measuring the outside temperatures of the IGBT module chip and the substrate, respectively recorded as the junction temperature T of the chip j And substrate case temperature T c In combination with power loss Ploss, i.e. turn-on voltage drop U ces And collector current I c Calculating the thermal resistance of the Insulated Gate Bipolar Transistor (IGBT) module crust, and specifically, the thermal resistance is shown in the following formula (2):
(3-4) recording the conduction voltage drop and the thermal resistance of each sampling period until failure. The degradation data of the conduction voltage drop and the thermal resistance are drawn into degradation curves, and are fitted through the following formula (3):
wherein U is ces-0 And R is th-0 Respectively U ces And R is th Initial value of a bw 、a sl 、b bw 、b sl For parameters to be fitted, D bw And D sl The aging degree of the bonding wire and the solder layer can be calculated by the following formula (4):
wherein N is the number of IGBT power cycles.
Further, in the step (4), the specific method for establishing the degradation constraint equation of the IGBT under the multi-failure mode physical coupling effect is as follows:
(4-1) obtaining related parameters of a constraint equation according to life prediction models of bonding wires and a solder layer and on-state voltage drop and crusting thermal resistance degradation curves of the IGBT, and calculating 8 parameters in total as shown in a table 1;
table 1 summary of the degradation constraint equation coefficient calculation method
(4-2) measuring the related parameters of constraint equations such as initial chip junction temperature, ambient temperature and the like;
(4-3) establishing a degradation constraint equation, the constraint equation being represented by the following formula (5):
wherein r is a-bw Indicating the ageing rate of the wire bond, the value being the inverse of the predicted lifetime, i.e. r a-bw ＝1/N f-bw 。
Further, in step (5), the specific method for iteratively calculating the lifetime of the B10 of the IGBT under the effect of the multi-failure mode physical coupling is as follows:
(5-1) performing iterative calculation on the constraint equation to obtain a bonding wire and solder layer degradation curve, namely D bw And D sl A change curve;
(5-2) calculating a bonding wire and solder layer failure probability change curve based on the degradation curve, the calculation formula being as follows (6):
wherein m is bw And m sl For bonding wire and shape parameters in the Weibull distribution of the solder layer, F can be obtained by table look-up or fatigue test bw (D bw )、F sl (D sl ) Respectively representing the cumulative failure rate of the bonding wire and the solder layer;
(5-3) calculating the overall failure probability of the IGBT module according to the failure probability of the bonding wire and the solder layer, wherein the calculation formula is as follows:
F IGBT (N)＝1-[1-F bw (D bw )][1-F sl (D sl )] (7)
wherein F is IGBT (N) represents the cumulative failure rate of the IGBT module as a whole.
(5-4) taking the point that the cumulative failure rate is 10%, and the corresponding cycle number is the B10 life of the IGBT. Taking F as an immediate reference IGBT N corresponding to (N) =0.1 is the B10 lifetime of the IGBT.
As shown in fig. 3, the specific flow of this embodiment is as follows:
step 01: measuring IGBT characteristic parameter initial value U ces-0 And R is th-0 ；
Step 02: performing a power cycle experiment aiming at the IGBT;
step 03: fitting a life prediction model of the bonding wire and the solder layer;
step 04: obtaining constant coefficient c bw 、c sl 、d bw 、d sl ；
Step 05: record and fit U ces 、R th A degradation curve;
step 06: obtaining constant coefficientsa bw 、a sl 、b bw 、b sl ；
Step 07: calculating constant coefficients a-g by combining the initial temperature;
step 08: constructing an aging constraint equation of the bonding wire and the solder layer;
step 09: by iterative calculation D bw And D sl A degradation curve;
step 10: calculating an accumulated failure rate change curve of the whole IGBT module;
step 11: taking the cycle number when the cumulative failure rate is 0.1 as the service life of B10;
step 12: and (5) ending.
According to the B10 service life prediction method of the IGBT under the physical coupling effect of the multiple failure modes, the degradation degree of the bonding lead and the solder layer is monitored, the failure probability of the bonding lead and the solder layer is estimated, the cumulative failure rate change curve of the whole IGBT module is finally calculated, and the cycle frequency with the cumulative failure rate of 10% is taken as the B10 service life of the IGBT module. Compared with the prior art, the method has the advantages of high prediction precision, low failure rate of the IGBT during the rated life and the like.
It should be noted that each step/component described in the present application may be split into more steps/components, or two or more steps/components or part of operations of the steps/components may be combined into new steps/components, according to the implementation needs, to achieve the object of the present application.
It will be readily appreciated by those skilled in the art that the foregoing description is merely a preferred embodiment of the application and is not intended to limit the application, but any modifications, equivalents, improvements or alternatives falling within the spirit and principles of the application are intended to be included within the scope of the application.
Claims (10)
1. A B10 life prediction method of an IGBT under the physical coupling effect of multiple failure modes is characterized by comprising the following steps:
carrying out a power cycle experiment of fixed junction temperature fluctuation aiming at the IGBT;
fitting a life prediction model of the bonding wire and the solder layer based on data obtained by a power cycle experiment;
measuring and fitting an on-state voltage drop and crusting thermal resistance degradation curve of the IGBT;
establishing a degradation constraint equation of the IGBT under the physical coupling action of multiple failure modes based on a life prediction model of the bonding wire and the solder layer and an on-state voltage drop and crusting thermal resistance degradation curve of the IGBT;
and carrying out iterative computation on the degradation constraint equation to obtain the service life of the B10 of the IGBT under the physical coupling action of multiple failure modes.
2. The method of claim 1, wherein the performing a power cycling experiment for IGBT with fixed junction temperature fluctuations comprises:
building an IGBT power circulation experiment platform, wherein the IGBT module generates power loss by using conduction voltage drop through circulating current in a heating stage, so as to realize temperature rise, and accelerates the cooling of the IGBT in a water cooling mode in a cooling stage;
and setting the upper limit and the lower limit of the junction temperature of the chip, and carrying out a power cycle experiment for fixing the fluctuation of the junction temperature.
3. The method of claim 1 or 2, wherein the fitting the bond wire and solder layer lifetime prediction model based on the data obtained from the power cycle experiment comprises:
performing power cycle experiments of a plurality of groups of different temperature loads to obtain failure data;
and fitting a life prediction model of each of the bonding wire and the solder layer based on the failure data.
4. A method according to claim 3, characterized by the fact that, byFitting a life prediction model of each of the bonding wire and the solder layer, wherein N f-bw Indicating predicted life of bond wire, N f-sl Representing the predicted lifetime of the solder layer c bw 、c sl 、d bw D sl Representing fitting parameters, T m Representation chipJunction temperature.
5. The method of claim 4, wherein measuring and fitting the IGBT on-state voltage drop versus crusting thermal resistance degradation curve comprises:
setting a sampling period, and measuring the conduction voltage drop of the IGBT based on a small current method;
measuring the temperature of the outer sides of the IGBT module chip and the substrate, and calculating the heat resistance of the IGBT module crust by combining the power loss;
recording the conduction voltage drop and the crusting thermal resistance of each sampling period until the conduction voltage drop and the crusting thermal resistance are invalid, drawing degradation data of the conduction voltage drop and the thermal resistance into a degradation curve, and fitting.
6. The method according to claim 5, characterized by that, byObtaining the thermal resistance R of the Insulated Gate Bipolar Transistor (IGBT) module crust th Wherein U is ces To turn on the voltage drop T j For chip junction temperature, T c Is the shell temperature of the substrate, I c Is collector current;
from the following componentsFitting an IGBT on-state voltage drop and crusting thermal resistance degradation curve, wherein U is as follows ces-0 And R is th-0 Respectively U ces And R is th Initial value of a bw 、a sl 、b bw 、b sl For parameters to be fitted, D bw And D sl The ageing degree of the bonding wire and the solder layer, respectively,/->N is the number of IGBT power cycles.
7. The method of claim 6, wherein the establishing a degradation constraint equation for the IGBT under the multi-failure mode physical coupling comprises:
according to a life prediction model of the bonding wire and the solder layer, obtaining related parameters of a constraint equation by an IGBT on-state pressure drop and crusting thermal resistance degradation curve, wherein the related parameters comprise: a represents a Lesit life prediction model non-exponential term, b represents a negative number of Lesit life prediction model exponential term index, c represents initial absolute temperature, d represents U ces Constant coefficient of change curve index term, e represents U ces The index of the change curve index term, f, represents D bw Conversion coefficient of constant coefficient at conversion time, g represents D bw The index conversion coefficient at the time of conversion and h represents R th An index of a change curve index term;
and measuring related parameters of constraint equations comprising the initial value of the chip junction temperature and the ambient temperature, and establishing a degradation constraint equation.
8. The method according to claim 7, characterized by that, byEstablishing a degradation constraint equation, wherein r is as follows a-bw Indicating the burn-in rate of the bond wire.
9. The method of claim 8, wherein iteratively calculating the degradation constraint equation for the B10 lifetime of the IGBT under the multi-failure mode physical coupling comprises:
iterative calculation is carried out on the degradation constraint equation, and a bonding wire and a solder layer D are obtained bw And D sl A change curve;
based on bonding wire and solder layer D bw And D sl Calculating a bonding lead and solder layer failure probability change curve according to the change curve;
calculating the overall failure probability of the IGBT module according to the failure probability of the bonding wire and the solder layer;
taking the point with the overall failure probability of 10%, and the corresponding cycle number is the service life of B10 of the IGBT.
10. The method according to claim 9, characterized in thatConsists ofCalculating a failure probability change curve of the bonding wire and the solder layer, wherein m is bw And m sl For the shape parameters in the Weibull distribution of the bonding wires and solder layers, F bw (D bw ) Indicating cumulative failure rate of bonding wire, F sl (D sl ) Indicating the cumulative failure rate of the solder layer;
from F IGBT (N)＝1-[1-F bw (D bw )][1-F sl (D sl )]Calculating the overall failure probability of the IGBT module, wherein F IGBT (N) represents the cumulative failure rate of the IGBT module as a whole.
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| CN202310597354.8A CN116720329A (en) | 2023-05-22 | 2023-05-22 | B10 service life prediction method of IGBT under multi-failure mode physical coupling effect |
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| CN202310597354.8A CN116720329A (en) | 2023-05-22 | 2023-05-22 | B10 service life prediction method of IGBT under multi-failure mode physical coupling effect |
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