CN116709803A - Display module, manufacturing method of display module and electronic equipment - Google Patents

Display module, manufacturing method of display module and electronic equipment Download PDF

Info

Publication number
CN116709803A
CN116709803A CN202310990524.9A CN202310990524A CN116709803A CN 116709803 A CN116709803 A CN 116709803A CN 202310990524 A CN202310990524 A CN 202310990524A CN 116709803 A CN116709803 A CN 116709803A
Authority
CN
China
Prior art keywords
doped region
red
green
type dopant
blue
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202310990524.9A
Other languages
Chinese (zh)
Other versions
CN116709803B (en
Inventor
赵学森
赵伟
李国孟
许瑾
张先平
边缘
周小康
于朝辉
王宏宇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Visionox Technology Co Ltd
Original Assignee
Beijing Visionox Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Visionox Technology Co Ltd filed Critical Beijing Visionox Technology Co Ltd
Priority to CN202310990524.9A priority Critical patent/CN116709803B/en
Publication of CN116709803A publication Critical patent/CN116709803A/en
Application granted granted Critical
Publication of CN116709803B publication Critical patent/CN116709803B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17Carrier injection layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/35Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/30Doping active layers, e.g. electron transporting layers

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

According to the display module, the manufacturing method of the display module and the electronic equipment provided by the application, the doping ratio of the P-type dopants in the hole injection layer is adjusted, so that the P-type dopants in the hole injection layer corresponding to the sub-pixels with different colors can have different doping ratios, further, the hole accumulation at the interfaces of the sub-pixels with different colors can be adjusted, and the overall capacitance of the whole sub-pixel is changed. Therefore, color cast of different sub-pixels when the smear phenomenon occurs can be reduced.

Description

Display module, manufacturing method of display module and electronic equipment
Technical Field
The application relates to the technical field of display equipment, in particular to a display module, a manufacturing method of the display module and electronic equipment.
Background
Organic light emitting diode (Organic Light Emitting Diode, OLED) display modules have been listed as a very promising next generation display technology because of their thin, light weight, wide viewing angle, active light emission, continuous and adjustable emission color, low cost, fast response speed, low energy consumption, low driving voltage, wide operating temperature range, simple production process, high light emission efficiency, flexible display, etc.
However, in the current OLED display module, due to the influence of the driving circuit and the device structure, when the display screen of the display module is switched from the low gray level to the high gray level, the problem that the brightness of the first frame of the display screen with the high gray level is lower than the normal brightness is generally existed, so that the smear phenomenon occurs on the display screen with the high gray level. Because the characteristics of materials used by the sub-pixels with different colors are different, the capacitances corresponding to the sub-pixels with different colors are also different, which can lead to different initial frame occupation ratios of the sub-pixels with different colors when the smear phenomenon occurs, thereby leading to certain color cast of the smear and influencing the visual experience of users.
Disclosure of Invention
In order to overcome the above-mentioned shortcomings in the prior art, an object of the present application is to provide a display module, which includes an array substrate and a hole injection layer located at one side of the array substrate;
the hole injection layer comprises a red doped region corresponding to the red light-emitting sub-pixel, a green doped region corresponding to the green light-emitting sub-pixel and a blue doped region corresponding to the blue light-emitting sub-pixel;
the doping ratio of the P-type dopant of the red doped region and/or the green doped region is different from the doping ratio of the P-type dopant of the blue doped region.
In one possible implementation, the doping ratio of the P-type dopant of the green doped region is smaller than the doping ratio of the P-type dopant of the red doped region.
In one possible implementation, the P-type dopant of the green doped region has a doping ratio that is less than the doping ratio of the P-type dopant of the blue doped region, which is less than the doping ratio of the P-type dopant of the red doped region.
In one possible implementation, the doping ratio of the P-type dopant of the red doped region is less than or equal to 3%.
In one possible implementation manner, the array substrate further includes a plurality of first electrodes disposed at intervals and a pixel defining layer including a plurality of pixel openings exposing the plurality of first electrodes, respectively; the orthographic projection of the region of the first electrode exposed by the pixel defining layer on the array substrate is positioned in the orthographic projection of the red doped region, the green doped region or the blue doped region corresponding to the first electrode on the array substrate.
In one possible implementation, the red doped region, the green doped region, and the blue doped region are located within a pixel opening defined by the pixel defining layer.
Another object of the present application is to provide a method for manufacturing a display module, the method including:
providing an array substrate;
forming a hole injection layer on one side of the array substrate, wherein the hole injection layer comprises a red doped region corresponding to a red light-emitting sub-pixel, a green doped region corresponding to a green light-emitting sub-pixel and a blue doped region corresponding to a blue light-emitting sub-pixel; the doping ratio of the P-type dopant of the red doped region and/or the green doped region is different from the doping ratio of the P-type dopant of the blue doped region.
In one possible implementation manner, the step of forming a hole injection layer on one side of the array substrate includes:
and evaporating one side of the array substrate by adopting mask plates with different opening positions to form the red doped region, the green doped region and/or the blue doped region with different doping ratios of the P-type dopants.
In a possible implementation manner, the step of forming the red doped region, the green doped region and/or the blue doped region with different doping ratios of the P-type dopant by vapor deposition on one side of the array substrate by using mask plates with different opening positions includes:
and forming the red doped region, the green doped region and/or the blue doped region with different doping ratios of the P-type dopant by adopting mask plates with different opening positions and adopting different evaporation source temperatures.
The application further provides electronic equipment, which comprises the display module provided by the application.
Compared with the prior art, the application has the following beneficial effects:
according to the display module, the manufacturing method of the display module and the electronic equipment provided by the application, the doping ratio of the P-type dopants in the hole injection layer is adjusted, so that the P-type dopants in the hole injection layer at the positions corresponding to the sub-pixels with different colors can have different doping ratios, further, the hole accumulation at the interfaces of the sub-pixels with different colors can be adjusted, and the overall capacitance of the whole sub-pixel is changed. Therefore, color cast of different sub-pixels when the smear phenomenon occurs can be reduced.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic diagram of a display module of the prior art.
Fig. 2 is a schematic diagram of a display module according to an embodiment of the application.
Fig. 3 is a schematic diagram of a second display module according to an embodiment of the application.
Fig. 4 is a third schematic diagram of a display module according to an embodiment of the application.
Fig. 5 is a flowchart illustrating steps of a method for manufacturing a display module according to an embodiment of the application.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present application more apparent, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments of the present application. The components of the embodiments of the present application generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the application, as presented in the figures, is not intended to limit the scope of the application, as claimed, but is merely representative of selected embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present application, it should be noted that, directions or positional relationships indicated by terms such as "center", "upper", "lower", "vertical", "horizontal", "inner", "outer", etc., are directions or positional relationships based on those shown in the drawings, or those that are conventionally put in use of the inventive product, are merely for convenience of describing the present application and simplifying the description, and do not indicate or imply that the apparatus or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application. Furthermore, the terms "first," "second," "third," and the like are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance.
It should be noted that, in the case of no conflict, different features in the embodiments of the present application may be combined with each other.
Referring to fig. 1, fig. 1 is a schematic view of a portion of a film layer of a display module in the prior art, where the display module includes an array substrate 100 and a light emitting layer disposed on the array substrate 100.
The array substrate 100 includes an array functional film layer 110, a first electrode layer located on the array functional film layer 110, and a pixel defining layer 130 located on a side of the first electrode layer away from the array functional film layer 110, wherein the first electrode layer includes a plurality of first electrodes 120 isolated from each other, and the pixel defining layer 130 includes a plurality of pixel openings exposing the plurality of first electrodes 120, respectively.
The light emitting layer includes a hole injection layer 410, a hole transport layer 420, an electron blocking layer, a light emitting material layer, a hole blocking layer, an electron transport layer 610, an electron injection layer 620, a second electrode layer 700, and the like, wherein fig. 1 only shows the hole injection layer 410 and the hole transport layer 420.
It should be noted that in the display module of the prior art, different sub-pixels share the same hole injection layer 410, and the doping ratio of the P-type dopant at each position of the hole injection layer 410 is approximately the same.
Referring to fig. 2 again, fig. 2 is a schematic diagram of a display module according to the present embodiment, where the display module includes an array substrate 100 and a light emitting layer located on one side of the array substrate 100, and the light emitting layer may include a hole injection layer 410.
Specifically, the array substrate 100 may include an array functional film layer 110 formed by a plurality of stacked film layer structures, for example, the array substrate 100 may be a TFT (Thin Film Transistor ) array substrate, and the array functional film layer 110 may include a plurality of film layer structures including a substrate, a buffer layer, a semiconductor active layer, a gate insulating layer, a first metal layer, a capacitor dielectric layer, a second metal layer, an interlayer dielectric layer, a third metal layer, a first planarization layer, a fourth metal layer, a second planarization layer, and the like, which are not described herein again. The array functional film layer 110 may include a plurality of switching devices formed of the above-described film layer structures, and different switching devices are used to drive different sub-pixels in the light emitting layer to emit light.
The array substrate 100 may further include a first electrode layer on the array functional film layer 110, where the first electrode layer includes a plurality of first electrodes 120 (e.g., anodes) disposed at intervals. The array substrate 100 may further include a pixel defining layer 130 located at a side of the first electrode layer away from the array substrate 100, the pixel defining layer 130 including a plurality of pixel openings exposing a plurality of the first electrodes 120, respectively.
Referring to fig. 2 again, compared with the prior art shown in fig. 1, which adopts the unified hole injection layer 410, the hole injection layer provided in this embodiment includes a red doped region 411 corresponding to a red light emitting sub-pixel, a green doped region 412 corresponding to a green light emitting sub-pixel, and a blue doped region 413 corresponding to a blue light emitting sub-pixel.
Specifically, for example, the pixel openings defined by the pixel defining layer 130 include a red sub-pixel opening, a green sub-pixel opening, and a blue sub-pixel opening. At least a portion of the red doped region 411 is located in the red subpixel opening, at least a portion of the green doped region 412 is located in the green subpixel opening, and at least a portion of the blue doped region 413 is located in the blue subpixel opening.
The side of the hole injection layer away from the first electrode layer may further include a hole transport layer 420, the side of the hole transport layer 420 away from the hole injection layer may further include a light emitting material layer 500, and the light emitting material layer 500 may include a red light emitting material 501 located in the red subpixel opening, a green light emitting material 502 located in the green subpixel opening, and a blue light emitting material 503 located in the blue subpixel opening.
Also, there is at least a partial overlap between the orthographic projection of the red doped region 411 on the array substrate 100 and the orthographic projection of the red luminescent material 501 on the array substrate 100. The front projection of the green doped region 412 on the array substrate 100 at least partially overlaps with the front projection of the green luminescent material 502 on the array substrate 100. The front projection of the blue doped region 413 on the array substrate 100 at least partially overlaps with the front projection of the blue luminescent material 503 on the array substrate 100.
In this embodiment, the doping ratio of the P-type dopant of the red doped region 411 and/or the green doped region 412 is different from the doping ratio of the P-type dopant of the blue doped region 413. For example, in one example, the red doped region 411, the green doped region 412 and the blue doped region 413 may be formed by using different masks, and the doping ratio of the P-type dopant of the red doped region 411 and/or the green doped region 412 may be different from the doping ratio of the P-type dopant of the blue doped region 413 by controlling the evaporation process parameters.
Based on the design, the display module, the manufacturing method of the display module and the electronic equipment provided by the application have the advantages that the doping ratio of the P-type dopants in the hole injection layer at the positions corresponding to the sub-pixels with different colors can be adjusted by adjusting the doping ratio of the P-type dopants in the hole injection layer, so that the hole accumulation at the interfaces of the sub-pixels with different colors can be adjusted, and the overall capacitance of the whole sub-pixel is changed. Therefore, color cast of different sub-pixels when the smear phenomenon occurs can be reduced.
The inventor researches that in some display modules, as different sub-pixels are made of different materials, the capacitance of the red sub-pixel is smaller, and the capacitance of the green sub-pixel is larger.
Thus, in one possible implementation of this embodiment, the doping ratio of the P-type dopant in the green doped region 412 may be reduced such that the doping ratio of the P-type dopant in the green doped region 412 is smaller than the doping ratio of the P-type dopant in the red doped region 411. In this way, hole injection in the green doped region 412 can be reduced, hole accumulation at the interface can be reduced, and thus the overall capacitance of the green sub-pixel can be reduced, and further the first frame duty ratio of the green sub-pixel can be improved.
In another possible implementation manner of this embodiment, the doping ratio of the P-type dopant in the red doped region 411 may be increased, so that the doping ratio of the P-type dopant in the green doped region 412 is smaller than the doping ratio of the P-type dopant in the red doped region 411. In this way, hole injection in the red doped region 411 can be increased, hole accumulation at the interface is improved, and thus the overall capacitance of the red subpixel is improved, and further the first frame duty ratio of the red subpixel is reduced.
In yet another possible implementation, the doping ratio of the P-type dopant of the blue doped region 413 may be reduced, and the doping ratio of the P-type dopant of the red doped region 411 may be increased, based on the doping ratio of the P-type dopant of the blue doped region 413, such that the doping ratio of the P-type dopant of the green doped region 412 is substantially smaller than the doping ratio of the P-type dopant of the blue doped region 413, and the doping ratio of the P-type dopant of the blue doped region 413 is substantially smaller than the doping ratio of the P-type dopant of the red doped region 411. Therefore, the first frame ratio of the green sub-pixel can be improved, and the first frame ratio of the red sub-pixel can be reduced at the same time, so that the difference of the first frame ratios between the green sub-pixel and the red sub-pixel is better reduced, and color cast generated when the smear phenomenon occurs in different sub-pixels is reduced.
Further, it has been found through the study of the inventor that the mobility of the hole injection layer does not change significantly after the doping ratio of the P-type dopant in the hole injection layer is higher than a certain threshold, and thus, in this embodiment, the doping ratio of the P-type dopant in the red doped region 411 may be set to be less than or equal to 3% in order to avoid increasing the unnecessary manufacturing cost.
In a possible implementation manner, referring to fig. 2 again, the array substrate 100 further includes a plurality of first electrodes 120 disposed at intervals, and an orthographic projection of an area of the first electrodes 120 exposed by the pixel defining layer 130 on the array substrate 100 is located in an orthographic projection of the red doped region 411, the green doped region 412 or the blue doped region 413 corresponding to the first electrodes 120 on the array substrate 100. In this way, it is ensured that doped regions of different colors of the hole injection layer may cover the corresponding first electrode 120.
Further, referring to fig. 3, the red doped region 411, the green doped region 412 and the blue doped region 413 are located in the pixel opening defined by the pixel defining layer 130.
In addition, referring to fig. 4, the display module provided in this embodiment may further include an electron transport layer 610 located on a side of the light emitting material layer 500 away from the array substrate 100, an electron injection layer 620 located on a side of the electron transport layer 610 away from the array substrate 100, and a second electrode layer 700 (e.g. a cathode layer) located on a side of the electron injection layer 620 away from the array substrate 100.
Referring to fig. 5, the present embodiment also provides a method for manufacturing a display module, which may include the following steps.
In step S110, the array substrate 100 is provided.
In step S120, a hole injection layer is formed on one side of the array substrate 100, and the hole injection layer includes a red doped region 411 corresponding to a red light emitting sub-pixel, a green doped region 412 corresponding to a green light emitting sub-pixel, and a blue doped region 413 corresponding to a blue light emitting sub-pixel. Wherein the doping ratio of the P-type dopant of the red doped region 411 and/or the green doped region 412 is different from the doping ratio of the P-type dopant of the blue doped region 413.
Specifically, in step S120, masks with different opening positions may be used, and the red doped region 411, the green doped region 412 and/or the blue doped region 413 with different doping ratios of the P-type dopant are formed by evaporation on one side of the array substrate 100. For example, high-precision Metal Mask (FMM) with different opening positions is used to form the red doped region 411, the green doped region 412 and/or the blue doped region 413 with different doping ratios of P-type dopants by vapor deposition on one side of the array substrate 100.
Specifically, in step S120, different masks with different opening positions and different evaporation source temperatures may be used to form the red doped region 411, the green doped region 412 and/or the blue doped region 413 with different doping ratios of the P-type dopant.
The embodiment also provides an electronic device, which may include the display module set provided in the embodiment.
In summary, according to the display module, the manufacturing method of the display module and the electronic device provided by the application, the doping ratio of the P-type dopant in the hole injection layer is adjusted, so that the P-type dopant in the hole injection layer at the positions corresponding to the sub-pixels with different colors can have different doping ratios, and further the hole accumulation at the interfaces corresponding to the sub-pixels with different colors can be adjusted, so that the overall capacitance of the whole sub-pixel is changed. Therefore, color cast of different sub-pixels when the smear phenomenon occurs can be reduced.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the application, which are described in detail and are not to be construed as limiting the scope of the application. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application. Accordingly, the scope of protection of the present application is to be determined by the appended claims.

Claims (10)

1. The display module is characterized by comprising an array substrate and a hole injection layer positioned on one side of the array substrate;
the hole injection layer comprises a red doped region corresponding to the red light-emitting sub-pixel, a green doped region corresponding to the green light-emitting sub-pixel and a blue doped region corresponding to the blue light-emitting sub-pixel;
the doping ratio of the P-type dopant of the red doped region and/or the green doped region is different from the doping ratio of the P-type dopant of the blue doped region.
2. The display module of claim 1, wherein the P-type dopant of the green doped region has a doping ratio that is less than a doping ratio of the P-type dopant of the red doped region.
3. The display module of claim 2, wherein the P-type dopant of the green doped region has a doping ratio that is less than a doping ratio of the P-type dopant of the blue doped region, and wherein the P-type dopant of the blue doped region has a doping ratio that is less than a doping ratio of the P-type dopant of the red doped region.
4. The display module of claim 2, wherein the red doped region has a P-type dopant doping ratio of less than or equal to 3%.
5. The display module of claim 1, wherein the array substrate further comprises a plurality of first electrodes and a pixel defining layer disposed at intervals, the pixel defining layer comprising a plurality of pixel openings exposing the plurality of first electrodes, respectively; the orthographic projection of the region of the first electrode exposed by the pixel defining layer on the array substrate is positioned in the orthographic projection of the red doped region, the green doped region or the blue doped region corresponding to the first electrode on the array substrate.
6. The display module of claim 5, wherein the red doped region, the green doped region, and the blue doped region are located within a pixel opening defined by the pixel defining layer.
7. A method for manufacturing a display module, the method comprising:
providing an array substrate;
forming a hole injection layer on one side of the array substrate, wherein the hole injection layer comprises a red doped region corresponding to a red light-emitting sub-pixel, a green doped region corresponding to a green light-emitting sub-pixel and a blue doped region corresponding to a blue light-emitting sub-pixel; the doping ratio of the P-type dopant of the red doped region and/or the green doped region is different from the doping ratio of the P-type dopant of the blue doped region.
8. The method of manufacturing a display module according to claim 7, wherein the step of forming a hole injection layer on one side of the array substrate comprises:
and evaporating one side of the array substrate by adopting mask plates with different opening positions to form the red doped region, the green doped region and/or the blue doped region with different doping ratios of the P-type dopants.
9. The method according to claim 8, wherein the step of forming the red doped region, the green doped region and/or the blue doped region with different doping ratios of the P-type dopant by vapor deposition on one side of the array substrate by using the mask plates with different opening positions comprises:
and forming the red doped region, the green doped region and/or the blue doped region with different doping ratios of the P-type dopant by adopting mask plates with different opening positions and adopting different evaporation source temperatures.
10. An electronic device, characterized in that the electronic device comprises a display module according to any one of claims 1-4.
CN202310990524.9A 2023-08-08 2023-08-08 Display module, manufacturing method of display module and electronic equipment Active CN116709803B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310990524.9A CN116709803B (en) 2023-08-08 2023-08-08 Display module, manufacturing method of display module and electronic equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310990524.9A CN116709803B (en) 2023-08-08 2023-08-08 Display module, manufacturing method of display module and electronic equipment

Publications (2)

Publication Number Publication Date
CN116709803A true CN116709803A (en) 2023-09-05
CN116709803B CN116709803B (en) 2023-11-24

Family

ID=87837946

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202310990524.9A Active CN116709803B (en) 2023-08-08 2023-08-08 Display module, manufacturing method of display module and electronic equipment

Country Status (1)

Country Link
CN (1) CN116709803B (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190252442A1 (en) * 2016-11-29 2019-08-15 Sony Semiconductor Solutions Corporation Sensor chip and electronic device
CN111092111A (en) * 2020-01-16 2020-05-01 云谷(固安)科技有限公司 Display panel, preparation method of display panel and display device
CN113066934A (en) * 2021-03-12 2021-07-02 武汉华星光电半导体显示技术有限公司 Display panel and mobile terminal
CN114628608A (en) * 2022-03-22 2022-06-14 京东方科技集团股份有限公司 Display substrate and display device
CN116419646A (en) * 2021-12-28 2023-07-11 乐金显示有限公司 Organic light emitting diode display device and method of manufacturing the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190252442A1 (en) * 2016-11-29 2019-08-15 Sony Semiconductor Solutions Corporation Sensor chip and electronic device
CN111092111A (en) * 2020-01-16 2020-05-01 云谷(固安)科技有限公司 Display panel, preparation method of display panel and display device
CN113066934A (en) * 2021-03-12 2021-07-02 武汉华星光电半导体显示技术有限公司 Display panel and mobile terminal
CN116419646A (en) * 2021-12-28 2023-07-11 乐金显示有限公司 Organic light emitting diode display device and method of manufacturing the same
CN114628608A (en) * 2022-03-22 2022-06-14 京东方科技集团股份有限公司 Display substrate and display device

Also Published As

Publication number Publication date
CN116709803B (en) 2023-11-24

Similar Documents

Publication Publication Date Title
KR101961190B1 (en) Organic electro-luminescence device and method of fabricating the same
US7977870B2 (en) OLED pixel structure and method for manufacturing the same
US11637266B2 (en) Display substrate, manufacturing method thereof, and display panel
CN109244269B (en) Display panel, manufacturing method thereof and display device
CN107068729B (en) Pixel structure, manufacturing method thereof, display substrate and display device
KR20180013377A (en) Display device
US11594579B2 (en) Display substrates, display devices and methods of forming display substrates and devices
US11723234B2 (en) Display backplane, manufacturing method thereof, and display device
CN109326630B (en) Display substrate, display device and mask plate
CN110867524B (en) Display panel, manufacturing method thereof and display device
US11864428B2 (en) Display substrate and display device
CN111710792B (en) Display panel and preparation method thereof
CN112968135A (en) Display substrate and related device
CN102969452A (en) Organic electro-luminescence display panel and method for fabricating same
CN111834552A (en) Display panel, organic light-emitting component and manufacturing method thereof
KR20040024484A (en) Electroluminescence display device and pattern layout method the same
US20170352709A1 (en) Architecture for very high resolution amoled display
US9704925B2 (en) EL display device
CN108400153B (en) OLED substrate, preparation method thereof and display device
KR102513510B1 (en) Organic Light Emitting Display Device
CN106328830A (en) AMOLED display manufacturing method and AMOLED display
CN116709803B (en) Display module, manufacturing method of display module and electronic equipment
US20220393131A1 (en) Organic light-emitting display panel and preparation method therefor, and display apparatus
US11164909B1 (en) Display panel, manufacturing method thereof, and display device
KR100497094B1 (en) Hybrid Structure Organic Electro-luminescent Device and method for fabricating the same

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant