CN116707495A - Frequency and amplitude adjustable triangular wave generating circuit based on memristor - Google Patents
Frequency and amplitude adjustable triangular wave generating circuit based on memristor Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K4/00—Generating pulses having essentially a finite slope or stepped portions
- H03K4/06—Generating pulses having essentially a finite slope or stepped portions having triangular shape
- H03K4/08—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape
- H03K4/48—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices
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Abstract
The invention discloses a memristor-based triangular wave generating circuit with adjustable frequency and amplitude, which comprises a singlechip, a triangular wave generating circuit, a memristor regulating circuit and a keyboard circuit. Firstly, a singlechip receives the triangular wave frequency and the voltage amplitude input by a keyboard circuit, and calculates the target resistance of the memristor; secondly, the singlechip cuts off the power supply of the triangular wave generating circuit, and the triangular wave generating circuit stops working at the moment; then, the single chip microcomputer controls the memristor regulating circuit to start working, the resistance value of the memristor changes at the moment, and when the target resistance value of the memristor is reached, the memristor regulating circuit controlled by the single chip microcomputer stops working; meanwhile, the singlechip restores the power supply of the triangular wave generating circuit, the resistance value of the memristor is not changed any more, and the triangular wave generating circuit starts to output triangular wave signals; and finally, the singlechip receives the triangular wave signal fed back by the triangular wave generating circuit, and then detects the triangular wave signal and realizes closed-loop control.
Description
Technical Field
The invention relates to a triangular wave generating circuit with adjustable frequency and amplitude, in particular to a triangular wave generating circuit with adjustable frequency and amplitude based on a memristor.
Background
Currently, triangular wave generation circuits are widely used in various electronic devices and systems, for example: in fm broadcasting, a triangular wave generating circuit is used to generate a baseband signal for modulation into a high frequency signal for transmission on a broadcasting station; in signal processing, a triangular wave generating circuit is used for generating sine waves and other types of alternating current signals; in digital circuits, a triangular wave generating circuit is used to generate pulse width modulated signals to control the output power of electronic components. Therefore, the triangular wave generating circuit has important application in the fields of electronic engineering, communication technology, automatic control technology and the like.
The conventional triangular wave generating circuit is shown in fig. 1, and is composed of a voltage comparator COMP1, a voltage comparator COMP2, resistors R1-R5, a capacitor C and a bidirectional voltage regulator VZ, and works by the self-oscillation principle. The voltage comparator COMP1, the resistors R1, R2, R4 and the bidirectional voltage regulator VZ form a non-inverting input hysteresis comparator, and the voltage comparator COMP2, the resistors R3, R5 and the capacitor C form an integral operation circuit; the positive and negative power supplies of the voltage comparators COMP1 and COMP2 are respectively V DD And V SS The inverting input terminal of the voltage comparator COMP1 is grounded, that is, the input voltage of the inverting input terminal of COMP1 is 0V. When the voltage of the non-inverting input terminal of the voltage comparator COMP1 is higher than 0V, the output voltage of the COMP1 output terminal is V DD The method comprises the steps of carrying out a first treatment on the surface of the When the voltage of the non-inverting input terminal of the voltage comparator COMP1 is lower than 0V, the output voltage of the COMP1 output terminal is V SS The method comprises the steps of carrying out a first treatment on the surface of the Therefore, the non-inverting input hysteresis comparator can output a square wave signal, and the bidirectional voltage regulator VZ can limit the voltage amplitude of the square wave signal to +/-VZ. The integrating operation circuit integrates the square wave signal into a triangular wave signal, so that the output end of the voltage comparator COMP2 can output the triangular wave signal, the frequency of the triangular wave signal can be calculated through the values of the resistors R1-R3 and the capacitor C, and the voltage amplitude of the triangular wave signal can be calculated through the resistors R1, R2 and the bidirectional voltage regulator VZ. In fig. 1, the resistor R4 is a current limiting resistor of the triangular wave generating circuit, and the resistor R5 is a balancing resistor of the voltage comparator COMP 2. Therefore, the triangular wave generating circuit can change the frequency and the voltage amplitude of the triangular wave output signal by changing the resistance values of the resistors R1-R3.
In general, the resistance in the triangular wave generating circuit can be changed by adopting a sliding rheostat or a digital potentiometer, so that the frequency and the amplitude of the triangular wave signal can be adjusted, but the sliding rheostat has the defects of large volume, low precision and the like, and the digital potentiometer also has the defects of low speed, high power consumption and the like.
As a fourth basic electronic element in circuit theory, besides resistance, capacitance and inductance, memristors with resistance plasticity have become core elements for hardware circuit implementation. The resistance plasticity of the memristor means that the resistance of the memristor changes when a specific external electric field is applied to the memristor; meanwhile, the memristor has directivity in resistance plasticity, namely, the opposite external electric field can generate opposite resistance change results. Currently, a voltage threshold type memristor is used as a common memristor model, and is characterized in that the resistance of the memristor is changed only when the voltage at two ends of the memristor exceeds the threshold voltage of the memristor.
Besides the variable resistance, the memristor has the advantages of low power consumption, nano-size, compatibility with MOS tubes and the like, and has wide application prospect in circuit design.
Based on the voltage threshold type memristor, the frequency and amplitude adjustable triangular wave generating circuit based on the memristor is provided, and the design requirements of high precision, high speed and low power consumption are met while the frequency and the voltage amplitude of a triangular wave output signal are continuously adjustable.
Disclosure of Invention
The invention provides a memristor-based triangular wave generating circuit with adjustable frequency and amplitude, which uses a voltage threshold type memristor to replace a sliding rheostat or a digital potentiometer in a traditional triangular wave generating circuit, and adopts a singlechip to control a memristor regulating circuit to finish continuous adjustable resistance of the memristor, so that triangular wave signals output by the triangular wave generating circuit can realize continuous adjustable frequency and voltage amplitude.
The invention is realized by the following technical scheme: a frequency and amplitude adjustable triangular wave generating circuit based on a memristor comprises a singlechip, a triangular wave generating circuit, a memristor regulating circuit and a keyboard circuit.
Firstly, a singlechip receives the triangular wave frequency and the voltage amplitude input by a keyboard circuit, and calculates the target resistance of the memristor; secondly, the singlechip cuts off the power supply of all the voltage comparators in the triangular wave generating circuit, and the triangular wave generating circuit stops working at the moment; then, the single chip microcomputer controls the memristor regulating circuit to start working, the resistance value of the memristor changes at the moment, and when the target resistance value of the memristor is reached, the memristor regulating circuit controlled by the single chip microcomputer stops working; at the same time, the singlechip restores the power supply of all the voltage comparators in the triangular wave generating circuit, the resistance value of the memristor is not changed any more, and the triangular wave generating circuit starts to output triangular wave signals; finally, the singlechip receives the triangular wave signal fed back by the triangular wave generating circuit, detects the frequency and the voltage amplitude of the triangular wave signal, and then realizes closed-loop control on the triangular wave signal.
The triangular wave generating circuit is composed of a voltage comparator COMP1, a voltage comparator COMP2, memristors M1-M3, resistors R1 and R2, a capacitor C and a positive power supply V DD Negative power supply V SS The NMOS transistors Q7 and Q8 and the bidirectional regulator VZ operate on the principle of self-oscillation. Positive power supply V DD The positive power pins of the voltage comparators COMP1 and COMP2 are connected to the source electrode of the NMOS tube Q7 in parallel; negative power supply V SS The negative power supply pins of the voltage comparators COMP1 and COMP2 are connected to the drain of the NMOS transistor Q8 in parallel. The gates of the NMOS transistors Q7 and Q8 are connected with one pin of the singlechip in parallel, so that the singlechip controls the power supply of the voltage comparators COMP1 and COMP2 by controlling the NMOS transistors Q7 and Q8. The voltage comparator COMP1, memristors M1 and M2, a resistor R1 and a bidirectional voltage regulator VZ form a non-inverting input hysteresis comparator; the voltage comparator COMP2, the memristor M3, the resistor R2, and the capacitor C constitute an integrating operation circuit. The inverting input terminal of the voltage comparator COMP1 is grounded, that is, the input voltage of the inverting input terminal of the voltage comparator COMP1 is 0V. When the voltage of the non-inverting input terminal of the voltage comparator COMP1 is higher than 0V, the output voltage of the COMP1 output terminal is V DD The method comprises the steps of carrying out a first treatment on the surface of the When the voltage is compared with CWhen the voltage of the non-inverting input terminal of OMP1 is lower than 0V, the output voltage of the COMP1 output terminal is V SS The method comprises the steps of carrying out a first treatment on the surface of the Therefore, the non-inverting input hysteresis comparator can output a square wave signal, and the bidirectional voltage regulator tube limits the voltage amplitude of the square wave signal to +/-VZ. The integration operation circuit integrates the square wave signal into a triangular wave signal, and the output end of the voltage comparator COMP2 can output the triangular wave signal. Different triangular wave signal frequencies and voltage amplitudes can be set by changing the resistance values of memristors M1-M3, the parameters of the bidirectional voltage regulator VZ and the like. Thus, changing the memristor resistance may change the frequency and voltage amplitude of the triangular wave signal. After the triangular wave generating circuit works normally, the voltage at two ends of the memristor is lower than the threshold voltage, the resistance value of the memristor is not changed any more, and the frequency and the voltage amplitude of the triangular wave signal output at the moment are kept unchanged.
The memristor regulating circuits are used for regulating and controlling the resistance values of the memristors M1-M3 respectively. Each memristor regulating circuit is composed of NMOS (N-channel metal oxide semiconductor) tube and voltage source +V D And a voltage source-V D The NMOS transistors have the function of a switch, and the grid electrodes of different NMOS transistors are connected with different pins of the singlechip. When the pin of the singlechip outputs high level, the NMOS tube connected with the pin of the singlechip is conducted, when the pin of the singlechip outputs low level, the NMOS tube connected with the pin of the singlechip is turned off, and the voltage source is +V D And a voltage source-V D Each memristor is connected with the positive electrode of the memristor in parallel through an NMOS tube, and the negative electrode of the memristor is grounded through an NMOS tube. The threshold voltages of the memristors M1-M3 are set to be the same, and the value V of the voltage source D Is set to be greater than the sum of the memristor threshold voltage and the conduction voltage drop of the two NMOS transistors. When the resistance of the memristor needs to be reduced, through control of a single chip microcomputer, an NMOS tube grounded by the memristor is conducted, and the memristor is connected with a voltage source +V D Is conducted by NMOS tube of +V D The positive electrode of the memristor is applied through the NMOS tube, and the resistance value of the memristor is reduced. When the resistance of the memristor needs to be increased, through control of a singlechip, an NMOS tube grounded by the memristor is conducted, and the memristor is connected with a voltage source-V D Is conducted by NMOS tube, -V D The positive electrode of the memristor is applied through the NMOS tube, and the resistance value of the memristor is increased. The conduction time of the NMOS tube is controlled by a singlechip, and the change of the resistance value of the memristor is controlled according to the applied voltageThe time and the initial resistance of the memristor are determined, so that the singlechip can control the resistance change of the memristor by controlling the memristor regulating circuit. In order to simplify circuit connection, the memristor M2 and the memristor M3 share one NMOS tube to be grounded, and the memristor M1 and the memristor M2 share two NMOS tubes to be respectively connected with a voltage source +V D And a voltage source-V D 。
The triangular wave signal output by the triangular wave generating circuit is fed back to the singlechip, and closed-loop monitoring is realized by detecting the frequency and the voltage amplitude of the triangular wave signal.
Drawings
Fig. 1 is a conventional triangular wave generating circuit.
FIG. 2 is a frequency and amplitude adjustable triangular wave generation circuit based on memristors in the present disclosure.
FIG. 3 is a diagram illustrating the variation of the resistance of the memristor M1 in the present disclosure.
FIG. 4 is a graph showing the variation of the resistance of the memristor M2 in the present disclosure.
FIG. 5 is a graph showing the resistance of the memristor M3.
Fig. 6 shows the frequency and voltage amplitude variation of the triangular wave signal according to the present invention.
Detailed Description
In order to make the technical scheme, the purpose and the advantages of the invention clearer and more clear, the invention is further described in detail below with reference to the accompanying drawings.
As shown in FIG. 2, the invention provides a memristor-based triangular wave generating circuit with adjustable frequency and amplitude, which comprises a singlechip, a triangular wave generating circuit, a memristor regulating circuit and a keyboard circuit.
As shown in FIG. 2, the singlechip adopts a 51-series singlechip with ADC function, the GND pin of the singlechip is grounded, the VCC pin of the singlechip is connected with a 5V voltage source, the P1.0 pin of the singlechip is connected with an output signal of a triangular wave, the P1.1 pin of the singlechip is connected with the grid of an NMOS tube Q1, the P1.2 pin of the singlechip is connected with the grid of an NMOS tube Q2, the P1.3 pin of the singlechip is connected with the grid of an NMOS tube Q3, the P1.4 pin of the singlechip is connected with the grid of an NMOS tube Q4, the P2.0 pin of the singlechip is connected with the grid of an NMOS tube Q5, the grid of an NMOS tube Q7 and the grid of an NMOS tube Q8 are connected with the pin of the singlechip in parallel mode.
As shown in FIG. 2, the triangular wave generating circuit is composed of a voltage comparator COMP1, a voltage comparator COMP2, memristors M1-M3, resistors R1 and R2, a capacitor C, and a positive power supply V DD Negative power supply V SS NMOS transistors Q7 and Q8, and a bidirectional regulator VZ. The inverting input end of the voltage comparator COMP1 is grounded, the positive electrode of the memristor M1 and the positive electrode of the memristor M2 are connected with the non-inverting input end of the voltage comparator COMP1 in a parallel mode, and the output end of the voltage comparator COMP1 is connected with one end of the resistor R1; the negative electrode of the memristor M3, one end of the bidirectional voltage stabilizing tube VZ and the negative electrode of the memristor M2 are connected in parallel with the other end of the resistor R1, and the other end of the bidirectional voltage stabilizing tube VZ is grounded; the positive electrode of the memristor M3 is connected with one end of a capacitor C in parallel with the inverting input end of the voltage comparator COMP2, and the other end of the capacitor C is connected with the output end of the voltage comparator COMP2 and is used as an output signal of triangular waves; one end of the resistor R2 is connected with the non-inverting input end of the voltage comparator COMP2, and the other end of the resistor R2 is grounded; the negative electrode of the memristor M1 is connected with the output end of a voltage comparator COMP2, negative power supply pins of the voltage comparators COMP1 and COMP2 are connected with the source electrode of an NMOS tube Q8 in a parallel mode, and positive power supply pins of the voltage comparators COMP1 and COMP2 are connected with the source electrode of an NMOS tube Q7 in a parallel mode.
As shown in FIG. 2, the memristor regulation circuit is powered by a voltage source +V D Voltage source-V D And NMOS transistors Q1-Q8. The positive electrode of the memristor M1 and the positive electrode of the memristor M2 are connected with the source electrode of the NMOS tube Q1 in parallel, and the drain electrode of the NMOS tube Q1 is connected with a voltage source +V D The positive electrode of the memristor M1 and the positive electrode of the memristor M2 are connected in parallel with the source electrode of the NMOS tube Q2, and the drain electrode of the NMOS tube Q2 is connected with a voltage source-V D Connecting; the source electrode and the drain electrode of the NMOS tube Q3 are respectively connected with the positive electrode and the voltage source +V of the memristor M3 D The source electrode and the drain electrode of the NMOS tube Q4 are respectively connected with the anode of the memristor M3 and the voltage source-V D Connecting; the source electrode and the drain electrode of the NMOS tube Q5 are respectively connected with the ground and the cathode of the memristor M1, the source electrode of the NMOS tube Q6 is connected with the ground, and the cathode of the memristor M2 and the cathode of the memristor M3 are connected with NMOS in parallelThe drain electrode of the tube Q6 is connected; drain of NMOS transistor Q7 and voltage source V DD Connected with the drain electrode of the NMOS tube Q8 and a voltage source V SS And (5) connection.
As shown in fig. 2, the keyboard circuit inputs the required frequency and voltage amplitude of the triangular wave signal into the singlechip, and the keyboard circuit is connected with a pin P2.3 of the singlechip.
The frequency of the triangular wave signal output by the triangular wave generating circuit in the inventionfThe calculation formula can be expressed as:f=m2/(4×m1×m3×c); voltage amplitude U of triangular wave signal OM The calculation formula can be expressed as: u (U) OM =±(M1/M2)*U Z Wherein U is Z Is the regulated value of the bi-directional regulator VZ.
By using the circuit shown in fig. 2 for simulation verification as an example, the initial resistance values of memristors M1-M3 in the set circuit are respectively 10kΩ, 12kΩ and 12kΩ, the resistance values of resistors R1 and R2 are both 10kΩ, the capacitance C is selected to be 56nF, and the bidirectional regulator VZ is selected to be 3V. The circuit simulation process is as follows, the triangular wave generating circuit starts to work when 0ms is set, and corresponding triangular wave signals are output under the initial resistance values of memristors M1-M3; when the time is 22ms, the singlechip cuts off the power supply of all the voltage comparators in the triangular wave generating circuit, and the triangular wave generating circuit stops working; then the single chip microcomputer controls the memristor regulation circuit to start to work, the resistance values of the memristors M1-M3 start to change at the same time at 23ms, the resistance value of the memristor M3 stops changing at 23.99ms, the resistance value of the memristor M2 stops changing at 25.2ms, and the resistance value of the memristor M1 stops changing at 28.18 ms; at the same time, the singlechip resumes the power supply of all voltage comparators in the triangular wave generating circuit, the resistance value of the memristor is not changed any more, and the triangular wave generating circuit outputs triangular wave signals with different frequencies and voltage amplitudes.
As shown in FIG. 3, the memristor M1 changes in resistance from an initial resistance of 10kΩ to 4kΩ during a period of 23ms-28.18ms, and the resistance of the memristor M1 does not change for the rest of the time. As shown in FIG. 4, the memristor M2 resistance changes during the 23ms-25.2ms period, changing from an initial resistance of 12kΩ to 8kΩ, and the remaining period of time the memristor M2 resistance does not change. As shown in FIG. 5, the memristor M3 resistance changes during the 23ms-23.99ms period, changing from an initial resistance of 12kΩ to 10kΩ, and the remaining period of time the memristor M3 resistance does not change.
As shown in FIG. 6, during 0ms-22ms, the initial resistance of the memristors M1-M3 is unchanged, the triangular wave generating circuit starts to vibrate at 2ms and outputs a triangular wave signal, the period of the triangular wave signal is 2.24ms, the frequency is about 446.43Hz, and the voltage amplitude is 2.5V; in the time of 23ms-28.18ms, the triangular wave generating circuit stops working and does not output, and the resistance values of the memristors M1-M3 are respectively changed; the triangular wave generating circuit starts vibrating again at 30ms to start outputting triangular wave signals with different frequencies and voltage amplitudes, the period of the triangular wave signals is 1.12ms, the frequency is about 892.86Hz, and the voltage amplitude is 1.5V. It can be seen that the frequency and voltage amplitude variation results of the triangular wave signals generated by the triangular wave generating circuit before and after the change of the resistance values of the memristors M1-M3 are consistent with the theoretical calculation results of the formula in [0026 ].
Claims (5)
1. The frequency and amplitude adjustable triangular wave generating circuit based on the memristor is characterized by comprising a singlechip, a triangular wave generating circuit, a memristor regulating circuit and a keyboard circuit; the singlechip firstly receives the triangular wave frequency and the voltage amplitude input by the keyboard circuit, and calculates the target resistance of the memristor; secondly, the singlechip cuts off the power supply of all the voltage comparators in the triangular wave generating circuit, and the triangular wave generating circuit stops working at the moment; then, the single chip microcomputer controls the memristor regulating circuit to start working, the resistance value of the memristor changes at the moment, and when the target resistance value of the memristor is reached, the memristor regulating circuit controlled by the single chip microcomputer stops working; at the same time, the singlechip restores the power supply of all the voltage comparators in the triangular wave generating circuit, the resistance value of the memristor is not changed any more, and the triangular wave generating circuit starts to output triangular wave signals; finally, the singlechip receives the triangular wave signal fed back by the triangular wave generating circuit, detects the frequency and the voltage amplitude of the triangular wave signal, and then realizes closed-loop control on the triangular wave signal.
2. The memristor-based frequency and amplitude adjustable triangular wave generating circuit according to claim 1, wherein the single-chip microcomputer is a 51-series single-chip microcomputer with an ADC function, a GND pin of the single-chip microcomputer is grounded, a VCC pin of the single-chip microcomputer is connected with a 5V voltage source, a P1.0 pin of the single-chip microcomputer is connected with an output signal of a triangular wave, a P1.1 pin of the single-chip microcomputer is connected with a grid of an NMOS tube Q1, a P1.2 pin of the single-chip microcomputer is connected with a grid of an NMOS tube Q2, a P1.3 pin of the single-chip microcomputer is connected with a grid of an NMOS tube Q3, a P1.4 pin of the single-chip microcomputer is connected with a grid of an NMOS tube Q5, a P2.1 pin of the single-chip microcomputer is connected with a grid of an NMOS tube Q6, and a grid of an NMOS tube Q7 and a grid of an NMOS tube Q8 are connected with a pin of the single-chip microcomputer P2.2 in a parallel mode.
3. The memristor-based frequency and amplitude adjustable triangular wave generation circuit of claim 1, wherein the triangular wave generation circuit is composed of a voltage comparator COMP1, a voltage comparator COMP2, memristors M1-M3, resistors R1 and R2, a capacitor C, and a positive power supply V DD Negative power supply V SS NMOS transistors Q7 and Q8 and a bidirectional voltage regulator VZ; the inverting input end of the voltage comparator COMP1 is grounded, the positive electrode of the memristor M1 and the positive electrode of the memristor M2 are connected with the non-inverting input end of the voltage comparator COMP1 in a parallel mode, and the output end of the voltage comparator COMP1 is connected with one end of the resistor R1; the negative electrode of the memristor M3, one end of the bidirectional voltage stabilizing tube VZ and the negative electrode of the memristor M2 are connected in parallel with the other end of the resistor R1, and the other end of the bidirectional voltage stabilizing tube VZ is grounded; the positive electrode of the memristor M3 is connected with one end of a capacitor C in parallel with the inverting input end of the voltage comparator COMP2, and the other end of the capacitor C is connected with the output end of the voltage comparator COMP2 and is used as an output signal of triangular waves; one end of the resistor R2 is connected with the non-inverting input end of the voltage comparator COMP2, and the other end of the resistor R2 is grounded; the negative electrode of the memristor M1 is connected with the output end of a voltage comparator COMP2, negative power supply pins of the voltage comparators COMP1 and COMP2 are connected with the source electrode of an NMOS tube Q8 in a parallel mode, and positive power supply pins of the voltage comparators COMP1 and COMP2 are connected with the source electrode of an NMOS tube Q7 in a parallel mode.
4. Root of Chinese characterThe memristor-based frequency and amplitude adjustable triangular wave generation circuit of claim 1, wherein the memristor regulation circuit is composed of a voltage source +v D Voltage source-V D And NMOS transistors Q1-Q8; the positive electrode of the memristor M1 and the positive electrode of the memristor M2 are connected with the source electrode of the NMOS tube Q1 in parallel, and the drain electrode of the NMOS tube Q1 is connected with a voltage source +V D The positive electrode of the memristor M1 and the positive electrode of the memristor M2 are connected in parallel with the source electrode of the NMOS tube Q2, and the drain electrode of the NMOS tube Q2 is connected with a voltage source-V D Connecting; the source electrode and the drain electrode of the NMOS tube Q3 are respectively connected with the positive electrode and the voltage source +V of the memristor M3 D The source electrode and the drain electrode of the NMOS tube Q4 are respectively connected with the anode of the memristor M3 and the voltage source-V D Connecting; the source electrode and the drain electrode of the NMOS tube Q5 are respectively connected with the ground and the cathode of the memristor M1, the source electrode of the NMOS tube Q6 is connected with the ground, and the cathode of the memristor M2 and the cathode of the memristor M3 are connected with the drain electrode of the NMOS tube Q6 in a parallel mode; drain of NMOS transistor Q7 and voltage source V DD Connected with the drain electrode of the NMOS tube Q8 and a voltage source V SS And (5) connection.
5. The memristor-based frequency and amplitude adjustable triangular wave generating circuit of claim 1, wherein the keyboard circuit inputs the required triangular wave signal frequency and voltage amplitude into the singlechip, and the keyboard circuit is connected with a P2.3 pin of the singlechip.
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Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101867366A (en) * | 2010-07-02 | 2010-10-20 | 北京联合大学生物化学工程学院 | Triangular wave generator with variable frequency and amplitude |
| CN203967988U (en) * | 2014-06-25 | 2014-11-26 | 中国科学院上海应用物理研究所 | A kind of scanning power supply for generation of class triangular wave exciting current |
| CN104916312A (en) * | 2015-06-03 | 2015-09-16 | 华中科技大学 | Memristor programming circuit based on operational amplifier and operating method for memristor programming circuit |
| US20170099004A1 (en) * | 2015-10-06 | 2017-04-06 | Fuji Electric Co., Ltd. | Control circuit for switching power supply device, and switching power supply device |
| CN108388303A (en) * | 2018-03-01 | 2018-08-10 | 宁波绿邦仪器仪表有限公司 | A kind of variable frequency square-wave generator |
| CN110190836A (en) * | 2019-06-06 | 2019-08-30 | 深圳和而泰智能控制股份有限公司 | A kind of pulse-width modulation circuit and electronic equipment |
| CN111600583A (en) * | 2020-06-02 | 2020-08-28 | 中北大学 | Random frequency triangular wave generator based on diffusion memristor and current transmitter |
| CN111641405A (en) * | 2020-06-02 | 2020-09-08 | 中北大学 | Random frequency triangular wave generator based on diffusion memristor |
| CN111669154A (en) * | 2020-06-02 | 2020-09-15 | 中北大学 | Triangular carrier wave generator for random pulse width modulation |
| CN213817720U (en) * | 2021-01-15 | 2021-07-27 | 西南交通大学 | Square wave and triangular wave generator circuit with adjustable oscillation frequency based on hysteresis comparator |
| CN115765964A (en) * | 2022-11-04 | 2023-03-07 | 贵州大学 | Triangular wave memristor conservative signal generator with isomorphic amplitude modulation function |
-
2023
- 2023-07-12 CN CN202310849186.7A patent/CN116707495B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101867366A (en) * | 2010-07-02 | 2010-10-20 | 北京联合大学生物化学工程学院 | Triangular wave generator with variable frequency and amplitude |
| CN203967988U (en) * | 2014-06-25 | 2014-11-26 | 中国科学院上海应用物理研究所 | A kind of scanning power supply for generation of class triangular wave exciting current |
| CN104916312A (en) * | 2015-06-03 | 2015-09-16 | 华中科技大学 | Memristor programming circuit based on operational amplifier and operating method for memristor programming circuit |
| US20170099004A1 (en) * | 2015-10-06 | 2017-04-06 | Fuji Electric Co., Ltd. | Control circuit for switching power supply device, and switching power supply device |
| CN108388303A (en) * | 2018-03-01 | 2018-08-10 | 宁波绿邦仪器仪表有限公司 | A kind of variable frequency square-wave generator |
| CN110190836A (en) * | 2019-06-06 | 2019-08-30 | 深圳和而泰智能控制股份有限公司 | A kind of pulse-width modulation circuit and electronic equipment |
| CN111600583A (en) * | 2020-06-02 | 2020-08-28 | 中北大学 | Random frequency triangular wave generator based on diffusion memristor and current transmitter |
| CN111641405A (en) * | 2020-06-02 | 2020-09-08 | 中北大学 | Random frequency triangular wave generator based on diffusion memristor |
| CN111669154A (en) * | 2020-06-02 | 2020-09-15 | 中北大学 | Triangular carrier wave generator for random pulse width modulation |
| CN213817720U (en) * | 2021-01-15 | 2021-07-27 | 西南交通大学 | Square wave and triangular wave generator circuit with adjustable oscillation frequency based on hysteresis comparator |
| CN115765964A (en) * | 2022-11-04 | 2023-03-07 | 贵州大学 | Triangular wave memristor conservative signal generator with isomorphic amplitude modulation function |
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| CN116707495B (en) | 2024-03-26 |
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