CN116705805A - Superlattice infrared detector with enhanced incidence and preparation method thereof - Google Patents
Superlattice infrared detector with enhanced incidence and preparation method thereof Download PDFInfo
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- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 27
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- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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Abstract
The invention provides an incidence enhanced superlattice infrared detector and a preparation method thereof, wherein the superlattice infrared detector comprises: an infrared material comprising a substrate and an epitaxial material, the epitaxial material disposed on the substrate; an interconnection structure; the readout circuit chip is connected with the epitaxial material through the interconnection structure; and an anti-reflection film disposed on the other side of the substrate opposite to the epitaxial material, the anti-reflection film being provided with a plurality of recesses. According to the superlattice infrared detector with enhanced incidence and the preparation method thereof, provided by the embodiment of the invention, by arranging the two thicknesses on the anti-reflection film, the incidence effect of infrared signals with two wavelengths is enhanced, the infrared radiation absorption capacity of the superlattice infrared detector is improved in a low-cost mode, the infrared signal detection capability is improved, and the imaging effect is optimized.
Description
Technical Field
The invention relates to the technical field of infrared detectors, in particular to an incidence-enhanced superlattice infrared detector and a preparation method thereof.
Background
Currently, a superlattice infrared focal plane detector has become one of hot spot technologies developed by infrared detectors, and has an irreplaceable important role in various fields. However, the target feature information acquired by the infrared single-band detection system is often weak, and a good imaging effect cannot be obtained. In order to solve the above problems, the development of a dual-color detector is particularly important. The dual-color infrared detector technology is actually a technology for realizing target identification in a complex environment by utilizing infrared dual-color information. The infrared radiation intensities of different types of radiation sources in different wave bands are obviously different, the bicolor infrared detector can synchronously collect two infrared wave band spectrums of a target, and the different wave band spectrums are compared, processed and synthesized, so that the contrast of images is enhanced, and the types of the radiation sources are more easily distinguished. Therefore, the infrared radiation sources such as targets, backgrounds, infrared baits and the like can be distinguished easily by utilizing the bicolor detector, and the accurate detection of infrared interference resistance of the targets is realized.
The existing superlattice infrared detector manufacturing process comprises the following steps: and (3) preparing a corresponding focal plane pattern mask by MBE (molecular beam epitaxy) epitaxial growth on a GaSb substrate, preparing a passivation film by dry etching, preparing a passivation film by PECVD (plasma enhanced chemical vapor deposition), preparing a required passivation film perforating mask by photoresist lithography, perforating by RIE (reactive ion etching) etching the passivation film, preparing a pattern required by a metal electrode by photoresist lithography again, evaporating the metal electrode by an electron beam, and stripping redundant photoresist and redundant metal on the redundant photoresist to finish the electrode metal with the required specific pattern. And then carrying out indium column graph photoetching, evaporating metal indium, and stripping to finish indium column manufacture. And after the indium column is manufactured, interconnection is carried out with the read-out circuit chip through flip-chip bonding, and then a glue filling process is carried out. And (3) after the glue filling is finished, carrying out a GaSb substrate thinning process, and finally, evaporating an anti-reflection film ZnS on the thinned GaSb substrate by using an electron beam to achieve the effect of increasing the incidence of detected infrared signals. After the anti-reflection film is manufactured, chip packaging is carried out, and finally the manufacturing of the superlattice infrared focal plane chip is completed, as shown in fig. 1, the infrared signal is firstly absorbed by the anti-reflection film (such as ZnS). Therefore, optimizing the structure of the anti-reflection film of the infrared detector, reducing the reflection of infrared signals and increasing the incidence effect of the infrared signals becomes an important link of the research of the superlattice infrared detector.
The ZnS anti-reflection film thickness d and the detectable infrared signal wavelength λ have the following correspondence:
equation 1: nd=λ/4 where n is the refractive index of ZnS film;
as can be seen from the above equation 1, to achieve the effect of increasing incidence and reducing reflection, each ZnS film thickness d can only correspond to one wavelength λ, and cannot satisfy the effect of increasing incidence of infrared signals of both wavelengths at the same time.
The superlattice bicolor infrared detector is a detector capable of detecting infrared signals in two different wavelength ranges, and the existing ZnS anti-reflection film can only increase the incidence effect of one wavelength infrared signal and cannot increase the incidence effect of two wavelength infrared signals at the same time.
Aiming at the problems, the invention provides an incidence-enhanced superlattice infrared detector and a preparation method thereof.
Disclosure of Invention
The invention provides an incidence-enhanced superlattice infrared detector and a preparation method thereof.
A first aspect of the present invention provides an incidence enhanced superlattice infrared detector comprising: an infrared material comprising a substrate and an epitaxial material, the epitaxial material disposed on the substrate; an interconnection structure; the readout circuit chip is connected with the epitaxial material through the interconnection structure; and an anti-reflection film arranged on the other side of the substrate opposite to the epitaxial material, wherein a plurality of depressions are arranged on the anti-reflection film, and the areas except the depressions on the anti-reflection film are non-depression areas.
Further, the anti-reflection film has a first thickness d1 on the non-recessed region on the anti-reflection film, and has a second thickness d2 on the anti-reflection film where the recess is located, the first thickness d1 being greater than the second thickness d2.
Further, the substrate is GaSb, the interconnection structure is an indium (In) column, and the anti-reflection film is ZnS.
Further, the epitaxial material includes: an n-type buffer layer disposed on the substrate; a first n-type contact layer disposed on the n-type buffer layer; a first M-type barrier disposed on the first n-type contact layer; a first absorption region disposed on the first M-type barrier; a first p-type contact layer disposed on the first absorption region; a p-type common contact layer disposed on the first p-type contact layer; a second p-type contact layer disposed on the p-type common contact layer; a second absorption region disposed on the second p-type contact layer; a second M-type barrier disposed on the second absorption region; a second n-type contact layer disposed on the second M-type barrier; and an n-type cap layer disposed on the second n-type contact layer.
Further, the n-type cap layer comprises InAs; the first n-type contact layer and the second n-type contact layer comprise InAs/GaSb/AlSb/GaSb; the first M-type potential barrier and the second M-type potential barrier comprise InAs/GaSb/AlSb/GaSb; the first absorption region and the second absorption region comprise InAs/GaSb; the first p-type contact layer and the second p-type contact layer comprise InAs/GaSb; the p-type common contact layer includes GaSb.
A second aspect of the present invention provides a method of making an enhanced-incidence superlattice infrared detector in accordance with an embodiment of the first aspect, comprising: preparing an epitaxial material on a substrate; preparing an interconnection structure on the epitaxial material; flip-chip interconnection of the epitaxial material with the readout circuit chip; and preparing an anti-reflection film having a plurality of recesses on the substrate.
Further, the preparing an anti-reflection film with a plurality of depressions on a substrate includes: grinding and polishing the GaSb substrate to a certain thickness, depositing ZnS with a certain thickness on the GaSb substrate by an electron beam evaporation method, coating, exposing and developing on the deposited ZnS film to form a pattern needing to be opened, etching the pattern needing to be opened to a certain thickness by an ICP dry etching method, and removing the photoresist mask.
According to the incidence enhanced superlattice infrared detector and the preparation method thereof, the incidence effect of infrared signals with two wavelengths is enhanced by arranging the two thicknesses on the anti-reflection film, the infrared radiation absorption capacity of the superlattice infrared detector is improved in a low-cost mode, the infrared signal detection capability is improved, and the imaging effect is optimized.
Drawings
Fig. 1 is a schematic structural diagram of a superlattice infrared focal plane chip in the prior art.
Fig. 2 is a schematic structural diagram of an incidence enhanced superlattice infrared detector in accordance with an embodiment of the invention.
Fig. 3 is a schematic top view of an anti-reflection film according to an embodiment of the present invention.
Fig. 4 is a schematic structural view of an infrared material according to an embodiment of the present invention.
Reference numerals:
1: an anti-reflection film; 11: a non-recessed region; 12: a recess;
2: an infrared material;
21: a substrate; 22: an n-type buffer layer; 23: a first n-type contact layer; 24: a first M-type potential barrier;
25: a first absorption zone; 26: a first p-type contact layer; 27: a p-type common contact layer; 28: a second p-type contact layer;
29: a second absorption zone; 210: a second M-type potential barrier; 211: a second n-type contact layer; 212: an n-type cap layer;
3: an interconnection structure; 4: and reading out the circuit chip.
Detailed Description
For a further understanding of the objects, construction, features, and functions of the invention, reference should be made to the following detailed description of the preferred embodiments.
Fig. 2 is a schematic structural diagram of an incidence enhanced superlattice infrared detector in accordance with an embodiment of the invention. As shown in fig. 2, an embodiment of the first aspect of the present invention provides an incidence enhanced superlattice infrared detector, including: an infrared material 2, the infrared material 2 comprising a substrate 21 and an epitaxial material, the epitaxial material being disposed on the substrate; an interconnection structure 3; the read-out circuit chip 4 is connected with the epitaxial material through the interconnection structure 3; and an anti-reflection film 1, the anti-reflection film 1 being provided on the other side of the substrate 21 opposite to the epitaxial material, a plurality of recesses 12 being provided on the anti-reflection film 1, and a region other than the recesses 12 on the anti-reflection film 1 being a non-recess region 11. Further, the anti-reflection film 1 has a first thickness d1 at the non-recessed region 11 on the anti-reflection film 1, that is, at the position other than the recess 12, and the anti-reflection film 1 has a second thickness d2 at the position where the recess 12 is located on the anti-reflection film 1, the first thickness d1 being larger than the second thickness d2. Here, the substrate is GaSb, the interconnection structure is an indium (In) column, and the antireflection film is ZnS.
Assuming peak wavelength division of infrared signal to be detectedLet alone lambda 1 And lambda (lambda) 2 From equation 1, it can be calculated that the corresponding ZnS anti-reflection film thicknesses are d 1 And d 2 . Let lambda be 1 >λ 2 Then d 1 >d 2。 Therefore, by providing the first thickness d1 and the second thickness d2 on the antireflection film 1, absorption of infrared signals of two wavelengths can be enhanced. Further, a third thickness d3 different from each of the first thickness d1 and the second thickness d2 may be provided on the anti-reflection film 1, or a fourth thickness d4 different from each of the first thickness d1, the second thickness d2, and the third thickness d3 may be provided on the anti-reflection film 1, so as to enhance absorption of infrared signals of three, four, or even more wavelengths.
Fig. 3 is a schematic top view of an anti-reflection film according to an embodiment of the present invention. The circular apertures are located in fig. 3, i.e. the recesses 12 in the anti-reflective film 1. The area of all the circular small holes, namely, all the pits, can occupy one half of the surface area of the whole ZnS anti-reflection film, and the opening diameter of the circular small holes can be set to be 15um. Since the infrared signal wavelength range is about 3 to 16um, the opening diameter of the circular aperture is preferably larger than that of the infrared wavelength range to prevent adverse effects such as optical diffraction. As shown in FIG. 2, after the ZnS anti-reflective film 1 is apertured, the wavelength is lambda 1 Is passed through by infrared signal with thickness d 1 The ZnS anti-reflection film of (2) is incident with the wavelength lambda 2 Is passed through by infrared signal with thickness d 2 Is incident on the ZnS anti-reflection film. The anti-reflection effect of infrared signals in two wavelength ranges can be achieved through a ZnS anti-reflection film opening method.
Fig. 4 is a schematic structural view of an infrared material according to an embodiment of the present invention. As shown in fig. 4, the epitaxial material includes: an n-type buffer layer 22, the n-type buffer layer 22 being disposed on the substrate 21; a first n-type contact layer 23, the first n-type contact layer 23 being disposed on the n-type buffer layer 22; a first M-type potential barrier 24, the first M-type potential barrier 24 being disposed on the first n-type contact layer 23; a first absorption region 25, the first absorption region 25 being disposed on the first M-type barrier 24; a first p-type contact layer 26, the first p-type contact layer 26 being disposed on the first absorption region 25; a p-type common contact layer 27, the p-type common contact layer 27 being disposed on the first p-type contact layer 26; a second p-type contact layer 28, the second p-type contact layer 28 being disposed on the p-type common contact layer 27; a second absorption region 29, the second absorption region 29 being disposed on the second p-type contact layer 28; a second M-type potential barrier 210, the second M-type potential barrier 210 being disposed on the second absorption region 29; a second n-type contact layer 211, the second n-type contact layer 211 being disposed on the second M-type barrier 210; and an n-type cap layer 212, the n-type cap layer 212 being disposed on the second n-type contact layer 211. It should be noted that the anti-reflection film 1 is provided on the opposite side of the substrate 21 from the epitaxial material, and thus "upper" and "lower" in the above description are also opposite, referring to the structural distribution of the side of the substrate 21 on which the epitaxial material is present as shown in fig. 4.
Here, n-type cap layer 212 includes InAs.
The first n-type contact layer 23 and the second n-type contact layer 211 include InAs/GaSb/AlSb/GaSb, which represent a period of one laminated structure, represent a periodic laminated structure laminated by InAs, gaSb, alSb, gaSb material, and the first n-type contact layer 23 and the second n-type contact layer 211 may include a plurality of such periods.
The first and second M-type barriers 24 and 210 include InAs/GaSb/AlSb/GaSb, which represent a period of one laminated structure, represent a periodic laminated structure laminated by InAs, gaSb, alSb, gaSb material, and the first and second M-type barriers 24 and 210 may include a plurality of such periods.
The first absorption region 25 and the second absorption region 29 include InAs/GaSb, which represents a period of one laminated structure, which represents a periodic laminated structure formed by laminating InAs, gaSb materials, and the first absorption region 25 and the second absorption region 29 may include a plurality of such periods.
The first and second p-type contact layers 26 and 28 include InAs/GaSb, which represent a period of one laminated structure, which represents a periodic laminated structure formed by laminating InAs, gaSb materials, and the first and second absorption regions 25 and 29 may include a plurality of such periods.
The p-type common contact layer 27 includes GaSb.
Fig. 4 shows a superlattice bicolor detector epitaxial structure with a structure of NM αpαmn. The main component of the superlattice epitaxial material is InAs/GaSb, and the GaSb substrate is used because the substrate and the epitaxial material have smaller lattice mismatch, so that the better epitaxial material can be grown. The n-type buffer layer is grown over the substrate also for the purpose of growing a better epitaxial material, and the absorption regions (the first absorption region 25 and the second absorption region 29) can generate photo-generated carriers under light conditions and then generate a current signal. Both M-type barrier layers (first M-type barrier 24 and second M-type barrier 210) are intercalated with AlSb material, because AlSb can act as a barrier for both electrons and holes to suppress dark current. Both the n-type contact layer (first n-type contact layer 23 and second n-type contact layer 211) and the p-type contact layer (first p-type contact layer 26 and second p-type contact layer 28) are highly doped, wherein the p-type contact layer is for better photogenerated carrier transport and the n-type contact layer is for better ohmic contact with the metal electrode. The InAs cap layer (n-type cap layer 212) is introduced because the MBE (molecular beam epitaxy) material needs to be grown with As to end the growth. By loading bias voltages with different polarities between the two n-type electrodes, signals with two different wavelengths can be detected.
An embodiment of a second aspect of the present invention provides a method for preparing an incidence enhanced superlattice infrared detector according to an embodiment of the first aspect, comprising: preparing an epitaxial material on a substrate; preparing an interconnection structure on the epitaxial material; flip-chip interconnection of the epitaxial material with the readout circuit chip; and preparing an anti-reflection film having a plurality of recesses on the substrate. Finally, the manufacturing of the infrared detector is completed after the FPGA, the camera and the display are connected through the packaging of the Dewar bottle and the cooling of the refrigerator.
The preparation of the interconnection structure on the epitaxial material comprises the following steps:
performing a photolithography process on the epitaxial material, and then dry etching the epitaxial material to etch a partial region to the first n-type contact layer in fig. 4; the etching mask can be silicon oxide or silicon nitride hard mask, so that a good etching effect can be achieved; the mask after etching can be removed by wet etching or dry etching;
performing passivation film silicon oxide deposition after mesa etching photoresist removal, and then performing a passivation film dry-method opening process to etch and open holes on the passivation film in the metal electrode area; using photoresist as a mask, and manufacturing metal electrodes in the upper electrode area and the lower electrode area after the passivation film is etched to form holes; the metal electrode film system is TiPtAu;
and manufacturing an indium column graph by using a negative photoresist or reverse photoresist mode, evaporating the indium column, and removing the photoresist to complete the material end process.
The flip-chip interconnection of the epitaxial material with the readout circuitry chip comprises: after the material end focal plane process is finished, the bonding with the read-out circuit chip is finished through a flip-chip bonding process.
The preparation of the anti-reflection film with a plurality of depressions on the substrate comprises the following steps: grinding and polishing the GaSb substrate to a certain thickness, depositing ZnS with a certain thickness on the GaSb substrate by an electron beam evaporation method, coating, exposing and developing the deposited ZnS film to form a pattern needing to be opened, etching the pattern needing to be opened to a certain thickness by an ICP (inductively coupled plasma) dry etching method, and removing the photoresist mask.
Let the peak wavelength of the detected infrared signal be lambda 1 And lambda (lambda) 2 The corresponding ZnS anti-reflection film thicknesses d1 and d2 can be calculated from equation 1, respectively. Let lambda be 1 >λ 2 Then d1>d2. When the ZnS anti-reflection film is manufactured, znS with the thickness of d1 is firstly evaporated on a thinned GaSb substrate, then a required hole pattern is formed on the ZnS through a photoetching step of glue coating, exposure and development, and then ICP dry etching (etching process gas is CH) 4 、H 2 Ar), the ZnS thickness of the portion without the photoresist covering on the opening pattern is etched to d2. And removing the residual photoresist mask after dry etching to complete the step of opening the anti-reflection film ZnS.
According to the invention, by means of the method for forming the holes in the anti-reflection film, the infrared radiation quantity received by the photosensitive surface of the GaSb substrate of the superlattice bicolor infrared detector can be improved by 10-15% under the condition of extremely low cost improvement, and the infrared signal detection capability of the superlattice bicolor infrared detector is well optimized. In the focal plane device process, partial areas are perforated to a certain depth on the substrate single-layer anti-reflection film, so that the infrared radiation quantity received by the photosensitive surface of the GaSb substrate of the superlattice bicolor infrared detector is improved, the infrared signal detection capability of the superlattice bicolor infrared detector is optimized, and the imaging effect of the detector is optimized.
According to the superlattice infrared detector with enhanced incidence and the preparation method thereof, provided by the embodiment of the invention, by arranging the two thicknesses on the anti-reflection film, the incidence effect of infrared signals with two wavelengths is enhanced, the infrared radiation absorption capacity of the superlattice infrared detector is improved in a low-cost mode, the infrared signal detection capability is improved, and the imaging effect is optimized.
In the description of the present invention, it should be understood that the terms "longitudinal," "transverse," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer" orientation or positional relationship are merely for convenience of description and to simplify the description, but do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore should not be construed as limiting the invention.
The invention has been described with respect to the above-described embodiments, however, the above-described embodiments are merely examples of practicing the invention. It should be noted that the disclosed embodiments do not limit the scope of the invention. On the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.
Claims (7)
1. An incidence enhanced superlattice infrared detector comprising:
an infrared material comprising a substrate and an epitaxial material, the epitaxial material disposed on the substrate;
an interconnection structure;
the readout circuit chip is connected with the epitaxial material through the interconnection structure; and
the anti-reflection film is arranged on the other side of the substrate, opposite to the epitaxial material, a plurality of pits are formed in the anti-reflection film, and the areas, except the pits, on the anti-reflection film are non-pit areas.
2. The enhanced-incidence superlattice infrared detector as recited in claim 1, wherein said anti-reflective film has a first thickness d1 on said non-recessed regions on the anti-reflective film, and a second thickness d2 on locations of said recesses on the anti-reflective film, said first thickness d1 being greater than said second thickness d2.
3. The enhanced-incidence superlattice infrared detector as defined in claim 2, wherein said substrate is GaSb, said interconnect structure is indium posts, and said anti-reflection film is ZnS.
4. The incidence enhanced superlattice infrared detector as recited in claim 3, wherein said epitaxial material comprises:
an n-type buffer layer disposed on the substrate;
a first n-type contact layer disposed on the n-type buffer layer;
a first M-type barrier disposed on the first n-type contact layer;
a first absorption region disposed on the first M-type barrier;
a first p-type contact layer disposed on the first absorption region;
a p-type common contact layer disposed on the first p-type contact layer;
a second p-type contact layer disposed on the p-type common contact layer;
a second absorption region disposed on the second p-type contact layer;
a second M-type barrier disposed on the second absorption region;
a second n-type contact layer disposed on the second M-type barrier; and
an n-type cap layer disposed on the second n-type contact layer.
5. The enhanced-incidence superlattice infrared detector as recited in claim 4, wherein,
the n-type cap layer comprises InAs;
the first n-type contact layer and the second n-type contact layer comprise InAs/GaSb/AlSb/GaSb, wherein InAs/GaSb/AlSb/GaSb represents a periodic laminated structure formed by laminating InAs, gaSb, alSb, gaSb materials;
the first M-type potential barrier and the second M-type potential barrier comprise InAs/GaSb/AlSb/GaSb, wherein InAs/GaSb/AlSb/GaSb represents a periodic laminated structure formed by laminating InAs, gaSb, alSb, gaSb materials;
the first absorption region and the second absorption region comprise InAs/GaSb which represents a periodic laminated structure formed by laminating InAs and GaSb materials;
the first p-type contact layer and the second p-type contact layer comprise InAs/GaSb which represents a periodic laminated structure formed by laminating InAs and GaSb materials;
the p-type common contact layer includes GaSb.
6. A method of making an incident enhanced superlattice infrared detector, comprising:
preparing an epitaxial material on a substrate;
preparing an interconnection structure on the epitaxial material;
flip-chip interconnection of the epitaxial material with the readout circuit chip; and
an anti-reflective film having a plurality of recesses is prepared on a substrate.
7. A method of fabricating an enhanced-incidence superlattice infrared detector as defined in claim 6, wherein said fabricating an anti-reflection film having a plurality of recesses on a substrate comprises:
grinding and polishing the GaSb substrate to a certain thickness, depositing ZnS with a certain thickness on the GaSb substrate by an electron beam evaporation method, coating, exposing and developing on the deposited ZnS film to form a pattern needing to be opened, etching the pattern needing to be opened to a certain thickness by an ICP dry etching method, and removing the photoresist mask.
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