CN116705603B - Manufacturing method of semiconductor pulse high-voltage diode - Google Patents
Manufacturing method of semiconductor pulse high-voltage diode Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 393
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 35
- 230000008569 process Effects 0.000 claims abstract description 29
- 238000004088 simulation Methods 0.000 claims abstract description 21
- 238000004458 analytical method Methods 0.000 claims abstract description 20
- 238000012797 qualification Methods 0.000 claims abstract description 12
- 230000002159 abnormal effect Effects 0.000 claims description 35
- 230000008094 contradictory effect Effects 0.000 claims description 19
- 238000002372 labelling Methods 0.000 claims description 17
- 239000013598 vector Substances 0.000 claims description 15
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- 238000012986 modification Methods 0.000 claims description 11
- 238000003491 array Methods 0.000 claims description 9
- 238000009960 carding Methods 0.000 claims description 9
- 238000012937 correction Methods 0.000 claims description 9
- 230000009467 reduction Effects 0.000 claims description 9
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- 238000012544 monitoring process Methods 0.000 claims description 7
- 238000012216 screening Methods 0.000 claims description 6
- 230000007704 transition Effects 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 4
- 238000012098 association analyses Methods 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 230000009286 beneficial effect Effects 0.000 description 7
- 239000002313 adhesive film Substances 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
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- 238000009713 electroplating Methods 0.000 description 3
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- 238000004806 packaging method and process Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 238000004018 waxing Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
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- 230000015556 catabolic process Effects 0.000 description 1
- 238000010219 correlation analysis Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L29/6609—Diodes
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Abstract
The invention provides a manufacturing method of a semiconductor pulse high-voltage diode, which comprises the steps of collecting the necessity requirement of manufacturing and calling the related manufacturing scheme from a manufacturing database; sequentially performing manufacturing simulation according to each manufacturing step in the manufacturing scheme, and acquiring manufacturing process information under the corresponding manufacturing step; performing qualification analysis on all manufacturing process information; setting a manufacturing association index to the corresponding reservation step according to the independent manufacturability and the manufacturing flow sequence number of each reservation step in the reservation scheme, and constructing a manufacturing list; in the actual production process, the process progress and the process data of the actual manufacturing process are recorded in real time, and compared and analyzed one by one with the manufacturing supervision standard generated according to the manufacturing list, so that the actual manufacturing process is corrected and adjusted in real time, and the manufacturing of the semiconductor pulse high-voltage diode is realized. The qualification of the manufacturing process is comprehensively ensured from the two aspects of simulation and actual production, and the manufacturing reliability is ensured.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a manufacturing method of a semiconductor pulse high-voltage diode.
Background
The pulse high-voltage diode is mainly applied to a pulse power supply, has good transient surge current impact characteristics, transient high-temperature absorption characteristics and a unique buffer area, and ensures the superior quality of the pulse high-voltage diode compared with other diodes.
The manufacturing process of the diode of different types is provided with corresponding manufacturing flow, and after the manufacturing process is completed according to the manufacturing flow, actual tests are carried out to determine whether the manufactured diode is qualified, and simulation tests are carried out before the manufacturing, but the simulation tests are generally standard tests aiming at the diode of the type, and the specific simulation is not carried out aiming at different requirements, so that the finally produced product cannot meet the expected requirements.
Therefore, the invention provides a manufacturing method of the semiconductor pulse high-voltage diode.
Disclosure of Invention
The invention provides a manufacturing method of a semiconductor pulse high-voltage diode, which is used for determining disqualification existing in the manufacturing process by carrying out scheme matching on requirements and manufacturing simulation on each step in the scheme, so as to realize preliminary correction on the scheme, and realizing effective correction on the actual production process by carrying out one-by-one comparison analysis and real-time adjustment on real-time recorded information and monitoring standard in the actual production process, comprehensively ensuring the qualification of the manufacturing process from the two aspects of simulation and actual production, and ensuring that the manufactured diode reaches the expected requirement as much as possible.
The invention provides a manufacturing method of a semiconductor pulse high-voltage diode, which comprises the following steps:
step 1: collecting the necessity requirement of manufacture and calling the related manufacturing scheme from a manufacturing database;
step 2: sequentially performing manufacturing simulation according to each manufacturing step in the manufacturing scheme, and acquiring manufacturing process information under the corresponding manufacturing step;
step 3: performing qualification analysis on all manufacturing process information, and reserving the manufacturing scheme when the analysis result is qualified, otherwise, determining an abnormal manufacturing process and an associated manufacturing process of the abnormal manufacturing process, and modifying corresponding manufacturing process parameters to obtain a qualified scheme and reserving the qualified scheme;
step 4: setting a manufacturing association index to the corresponding reservation step according to the independent manufacturability and the manufacturing flow sequence number of each reservation step in the reservation scheme, and constructing a manufacturing list;
step 5: in the actual production process, the process progress and the process data of the actual manufacturing process are recorded in real time, and compared and analyzed one by one with the manufacturing supervision standard generated according to the manufacturing list, so that the actual manufacturing process is corrected and adjusted in real time, and the manufacturing of the semiconductor pulse high-voltage diode is realized.
Preferably, collecting manufacturing necessity requirements and retrieving relevant manufacturing scenarios from a manufacturing database includes: acquiring each necessity requirement of a diode to be manufactured, constructing a requirement array, inputting the requirement array into a contradiction analysis list, and determining non-contradiction requirements, contradiction requirements and mutually incompatible requirements consistent with the contradiction requirements existing in the requirement array;
according to the set necessary level of each necessary requirement in the requirement acquisition process, determining an incompatible array of different contradictory requirements and corresponding mutually incompatible requirements;
determining the maximum necessary level in each incompatible array and whenWhen the first calibration is performed to the maximum necessary level in the corresponding incompatible array, wherein y0 max Representing a necessary value corresponding to the maximum necessary level; y01 i1 Representing a necessary value corresponding to the i1 st remaining necessary level of all remaining necessary levels n in the incompatible array; when (when)When the method is used, counting the total occurrence times of all the incompatible arrays based on each requirement in the corresponding incompatible arrays, and carrying out second calibration on the requirement of the minimum total occurrence times;
based on the first calibration result and the second calibration result, eliminating repeated demands, and judging whether contradictory demands exist in the residual non-eliminated demands;
If the requirements exist, sorting the sizes of the necessary values of the necessary levels of the residual non-removed requirements, removing the requirements with small necessary values if the same-level contradiction exists, and removing the requirements with low levels if the different-level contradiction exists;
and according to the removed requirements and the non-contradictory requirements, calling a consistent manufacturing scheme from a manufacturing database.
Preferably, the incompatible array includes: contradictory requirements and setting necessary levels of contradictory requirements, corresponding mutually incompatible requirements and setting necessary levels of mutually incompatible requirements.
Preferably, the manufacturing simulation is sequentially performed according to each manufacturing step in the manufacturing scheme, and manufacturing process information under the corresponding manufacturing step is obtained, including:
acquiring all manufacturing sections of each manufacturing step, and determining the number of tools to be set of the corresponding manufacturing section according to the total parameter amount of each manufacturing section and the section weight of each manufacturing section;
wherein N1 represents the number of tools to be set in the corresponding manufacturing section; n1 represents the number of key manufacturing points of the corresponding manufacturing section; oc represents the segment weight of the corresponding manufacturing segment; m represents the total amount of parameters of the corresponding manufacturing section; n represents the total amount of parameters of the manufacturing step; [] Representing a rounding symbol;
According to the number of the tools to be set, carrying out average setting on the manufacturing sections, and obtaining time capturing results of the capturing tools at each setting position on the parameters of the corresponding setting position;
comparing the capturing results of all times with the standard time results of the corresponding setting positions, and if the capturing results of all times are consistent with the standard time results of the corresponding setting positions, setting time normal labels for the capturing tools of the corresponding setting positions;
if the positions are inconsistent, searching inconsistent positions, determining time capture offset of the inconsistent positions, and setting time offset labels for corresponding capture tools;
determining a first capture time of a last tool of a first one of the adjacent manufacturing segments and a second capture time of the first tool of a second one of the adjacent manufacturing segments;
if the time interval difference between the second capturing time and the first capturing time is within a preset range, the setting positions of the last tool and the first tool are kept unchanged;
otherwise, determining the number to be supplemented, and overlapping the transition parts of the adjacent manufacturing sections at the same position according to the number to be supplemented;
wherein D represents the number to be supplemented; t (T) max The maximum value of the preset range is represented, and the value of the preset range is [0, T max ]；
Capturing the manufacturing steps based on the tool provided with the label and the tool provided with the transition part, and counting the captured manufacturing information according to the qualified time sequence to obtain the manufacturing process information.
Preferably, the qualification analysis is performed on all manufacturing process information, including:
performing time alignment processing on the manufacturing process information of each manufacturing step and the standard process information, and judging whether inconsistent information exists or not;
if the corresponding manufacturing steps are not available, judging that the corresponding manufacturing steps are qualified;
otherwise, determining that the corresponding manufacturing step is unqualified, and locking the inconsistent information at the alignment time point.
Preferably, determining an abnormal manufacturing process and associated manufacturing processes of the abnormal manufacturing process and modifying corresponding manufacturing process parameters includes:
inconsistent information in each abnormal manufacturing process is obtained, and a first carding vector is constructed;
sequentially inputting all the first carding vectors into an association analysis model, judging a first association relation between the first carding vectors, and simultaneously acquiring a second association relation between a first abnormal manufacturing process and the rest abnormal manufacturing processes according to the association manufacturing process of the first abnormal manufacturing process and the rest abnormal manufacturing process;
building an association line of the corresponding inconsistent information which is newly appeared for the first time after being ordered according to the time sequence according to the first association relation and the second association relation;
according to the line attribute of the built line, a modification scheme is called from an attribute-modification database, and inconsistent information on the corresponding built line is modified;
Wherein, the inconsistent information is the manufacturing process parameters which need to be modified.
Preferably, setting a manufacturing association index to each reservation step according to the individual manufacturability and the manufacturing flow number of each reservation step in the reservation scheme, and constructing a manufacturing list, includes:
determining a manufacturing engagement relationship between each retention step and each remaining retention step in the retention solution;
determining the independent manufacturability of the corresponding reserved step according to the manufacturing connection relation, screening connection relation with a correlation relation from the manufacturing connection relation, and constructing and obtaining a manufacturing flow sequence number according to the step number of the connection step corresponding to the connection relation with the correlation relation and the preset specified number of the corresponding reserved step;
establishing an associated index of the single manufacturability and the manufacturing flow sequence number of the same reservation step;
based on all the associated indexes, a manufacturing list is constructed.
Preferably, the real-time correction and adjustment of the actual manufacturing process comprises:
monitoring and recording the process progress and process data of each manufacturing step in the actual manufacturing process in real time;
performing significance labeling according to the related steps related to each related index in the manufacturing list, and determining the labeling times of each reserved step according to the significance labeling result;
Determining whether the parameter range of the standard parameter related in the corresponding reservation step needs to be reduced and adjusted according to the marking times and the independent manufacturability of the corresponding reservation step;
if the labeling times are smaller than the preset times, judging that the shrinkage adjustment is not needed;
otherwise, the parameter range of the corresponding standard parameter is reduced and adjusted;
wherein R is 01 A left boundary value representing a parameter range of the corresponding standard parameter; r is R 02 Right boundary values representing parameter ranges for the respective standard parameters; m1 represents the corresponding labeling times; m0 represents a preset number of times; r is R z Intermediate values representing parameter ranges of the respective standard parameters; ω represents the individual manufacturability of the corresponding retention step; r1 represents a value obtained by adjusting the left boundary of a parameter range of the corresponding standard parameter; r2 represents a value obtained by adjusting the right boundary of the parameter range of the corresponding standard parameter;
if R1 < R2, then R1 is replaced by R 01 Replacement of R2 with R 02 Realizing the reduction adjustment;
if R1 > R2 and R2 < R 01 At this time, R is reserved 01 Unchanged, and R2 is replaced by R 02 Realizing the reduction adjustment;
if r1=r2, then this is as followsFor R 01 Left side zoom-out adjustment is performed +.>For R 02 Performing right side reduction adjustment;
And according to the adjustment result, acquiring a manufacturing supervision standard based on the manufacturing list, comparing the manufacturing supervision standard with process data of different manufacturing progress in each manufacturing step one by one, determining abnormal data in the corresponding progress, reminding, and realizing real-time correction and adjustment of the actual manufacturing process.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention may be realized and attained by the structure particularly pointed out in the written description and drawings.
The technical scheme of the invention is further described in detail through the drawings and the embodiments.
Drawings
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate the invention and together with the embodiments of the invention, serve to explain the invention. In the drawings:
fig. 1 is a flowchart of a method for manufacturing a semiconductor pulse high voltage diode according to an embodiment of the present invention.
Detailed Description
The preferred embodiments of the present invention will be described below with reference to the accompanying drawings, it being understood that the preferred embodiments described herein are for illustration and explanation of the present invention only, and are not intended to limit the present invention.
The invention provides a method for manufacturing a semiconductor pulse high-voltage diode, as shown in fig. 1, comprising the following steps:
step 1: collecting the necessity requirement of manufacture and calling the related manufacturing scheme from a manufacturing database;
step 2: sequentially performing manufacturing simulation according to each manufacturing step in the manufacturing scheme, and acquiring manufacturing process information under the corresponding manufacturing step;
step 3: performing qualification analysis on all manufacturing process information, and reserving the manufacturing scheme when the analysis result is qualified, otherwise, determining an abnormal manufacturing process and an associated manufacturing process of the abnormal manufacturing process, and modifying corresponding manufacturing process parameters to obtain a qualified scheme and reserving the qualified scheme;
step 4: setting a manufacturing association index to the corresponding reservation step according to the independent manufacturability and the manufacturing flow sequence number of each reservation step in the reservation scheme, and constructing a manufacturing list;
step 5: in the actual production process, the process progress and the process data of the actual manufacturing process are recorded in real time, and compared and analyzed one by one with the manufacturing supervision standard generated according to the manufacturing list, so that the actual manufacturing process is corrected and adjusted in real time, and the manufacturing of the semiconductor pulse high-voltage diode is realized.
In this embodiment, the necessity is that the pulse width of the diode is greater than 0.1s, the lateral distribution gradient distribution of the p-type impurity is as uniform as possible, the breakdown voltage is 102v, and the like.
In this embodiment, the manufacturing database includes a number of different manufacturing scenarios that match the combination of necessity requirements, i.e., subsequent manufacturing simulations using the manufacturing scenarios.
Such as: demand 1, demand 2, demand 3—manufacturing scheme 1;
if demand 3 is not important and there is also a manufacturing conflict with demands 1 and 2, at which point demand 1, demand 2- -manufacturing scenario 2.
For example, the manufacturing scheme finally obtained comprises the following steps:
the round silicon wafer is subjected to waxing, namely the back surface of the round silicon wafer is subjected to adhesive mounting with a non-conductive adhesive film and an ultraviolet sensitive channel;
scribing: putting the round silicon wafer subjected to film pasting into an automatic dicing saw, cutting the round silicon wafer according to the size requirement of the diode chip graph, and irradiating an ultraviolet sensitive film by using an ultraviolet lamp;
and (3) loading: separating the non-conductive adhesive film and the ultraviolet sensitive film, sequentially adsorbing a polar tube chip by a straight suction nozzle of a full-automatic chip loader, assembling the polar tube chip with a lead frame potential with thousands of lead units, heating the non-conductive adhesive film at high temperature to dissolve and cool to solidify, and firmly combining the non-conductive adhesive film with a first chip pad and a second chip pad of the lead units;
Welding wires, namely connecting the positive electrode and the negative electrode of the one-pole chip subjected to chip loading treatment with the residual areas of the first chip base island and the second chip base island of the pin unit through a hammer wire;
and (3) plastic packaging: placing the diode chip and the lead frame after bonding wires into a mold cavity, and injecting epoxy resin for plastic packaging; removing flash: removing the first pins and redundant plastic package bodies on the first pins, and washing the first pins with high-pressure water;
electroplating: electroplating the pins.
The method comprises the following steps of round silicon wafer waxing, scribing, chip loading, bonding wire, plastic packaging, deburring and electroplating.
In this embodiment, the manufacturing simulation simulates each step to determine whether the corresponding step is reasonable, and may simulate the relevant step based on a simulation platform, and obtain corresponding manufacturing process information, for example, capture during the simulation of the dividing step: the circular silicon wafer after film pasting is placed in the placement position of an automatic dicing saw, cutting information after the circular silicon wafer is cut according to the size requirement of diode chip patterns, irradiation time of ultraviolet light for irradiating an ultraviolet sensitive film and the like, namely, each manufacturing step also comprises a plurality of small steps, and each manufacturing step has definite manufacturing time, so that the circular silicon wafer is required to be manufactured strictly according to time.
In this example, the qualification analysis means that, for example, the irradiation time is 10 seconds after the capturing, but the irradiation is actually required to be performed for 12 to 15 seconds, and at this time, the irradiation standard is not satisfied, and the qualification is regarded as failure, that is, the manufacturing step is an abnormal step, and the corresponding manufacturing process is an abnormal manufacturing process.
In this embodiment, if a failure may occur in the separation of the subsequent non-conductive adhesive film and the uv-sensitive film mount due to insufficient irradiation time, it is indicated that the manufacturing step of the die is associated with the abnormal manufacturing step dicing, that is, the associated manufacturing process in which the die is diced.
In this case, the irradiation time is required to be modified from 10s to 12-15 s, that is, the parameters of the manufacturing process are modified.
For example, there are steps 1, 2, 3, where step 1 is manufactured with no correlation to steps 2 and 3, where step 1 may be manufactured alone with 1, but if there is a correlation to step 2 with no correlation to step 3, where step 1 may be manufactured alone with 1/2, where 1 in 1/2 represents the number of correlations and 2 in 1/2 represents the total number of analyses to remove the remaining steps of itself.
In this embodiment, the manufacturing flow number is determined based on the manufacturing recipe, i.e., the predetermined order of execution for each manufacturing step.
In this embodiment, for example: association index for step 1: step 1-manufacturability alone-manufacturing Process number.
In this embodiment, the manufacturing list is to integrate all the associated indexes together, such as: list of manufacture: association index 1, association index 2, etc.
In this embodiment, the actual production process means that the corresponding diode is actually produced according to a qualified scheme.
In this embodiment, since each manufacturing step is preset with a corresponding manufacturing time, it is necessary to record the progress of the manufacturing process and the data generated during the manufacturing process in the actual production process, so as to ensure the accuracy of the subsequent comparison.
In this embodiment, the manufacturing supervision standard refers to standard parameters related to all indexes in the manufacturing list, so as to facilitate comparison analysis with various parameters in the actual manufacturing process.
In this embodiment, if the parameter 1 suddenly goes wrong, i.e. is not within the corresponding standard range, during the actual production process, the parameter 1 needs to be adjusted to be within the corresponding range, such as the irradiation time, which may be manually adjusted.
The beneficial effects of the technical scheme are as follows: the scheme is matched with the requirements and each step in the scheme is subjected to manufacturing simulation to determine disqualification in the manufacturing process, so that the scheme is primarily corrected, and the actual production process is effectively corrected by comparing and analyzing real-time recorded information with monitoring standards one by one and adjusting the real-time recorded information and monitoring standards in the actual production process, so that the qualification of the manufacturing process is comprehensively ensured from the two aspects of simulation and actual production, and the manufactured diode is ensured to reach the expected requirement as much as possible.
The invention provides a manufacturing method of a semiconductor pulse high-voltage diode, which collects the necessity requirement of manufacturing and calls out related manufacturing schemes from a manufacturing database, comprising:
acquiring each necessity requirement of a diode to be manufactured, constructing a requirement array, inputting the requirement array into a contradiction analysis list, and determining non-contradiction requirements, contradiction requirements and mutually incompatible requirements consistent with the contradiction requirements existing in the requirement array;
according to the set necessary level of each necessary requirement in the requirement acquisition process, determining an incompatible array of different contradictory requirements and corresponding mutually incompatible requirements;
determining the maximum necessary level in each incompatible array and whenWhen the first calibration is performed to the maximum necessary level in the corresponding incompatible array, wherein y0 max Representing a necessary value corresponding to the maximum necessary level; y01 i1 Representing a necessary value corresponding to the i1 st remaining necessary level of all remaining necessary levels n in the incompatible array; when (when)When the method is used, counting the total occurrence times of all the incompatible arrays based on each requirement in the corresponding incompatible arrays, and carrying out second calibration on the requirement of the minimum total occurrence times;
Based on the first calibration result and the second calibration result, eliminating repeated demands, and judging whether contradictory demands exist in the residual non-eliminated demands;
if the requirements exist, sorting the sizes of the necessary values of the necessary levels of the residual non-removed requirements, removing the requirements with small necessary values if the same-level contradiction exists, and removing the requirements with low levels if the different-level contradiction exists;
and according to the removed requirements and the non-contradictory requirements, calling a consistent manufacturing scheme from a manufacturing database.
Preferably, the incompatible array includes: contradictory requirements and setting necessary levels of contradictory requirements, corresponding mutually incompatible requirements and setting necessary levels of mutually incompatible requirements.
In this embodiment, for example, there are: demand 1, 2, 3, demand array: demand 1 demand 2 demand 3, wherein the contradiction analysis list is preset, is a list of contradictions existing between different demands determined by an expert in the diode manufacturing process.
That is, the requirements are input to corresponding locations in the table, and the results can be directly compared.
For example, the result of the comparison is that the requirement 1 is a non-contradictory requirement, the requirements 2 and 3 are contradictory requirements, and the requirements 2 and 3 are regarded as mutually incompatible requirements and are incompatible arrays: [ requirement 2 requirement 3].
In this embodiment, the setting of the necessary level is set when the necessity requirement is collected, and may be custom designed by the user, so as to meet the requirement of the user as much as possible.
In this embodiment, the incompatible array: [ requirement 2 requirement 3]The maximum necessary level of the demand 2 is 10, the maximum necessary level of the demand 3 is 2, and the demand 2 is calibrated for the first time, and noFurther, the requirement 1 and the requirement 2 are regarded as the last reserved requirement.
In this embodiment, if not compatible with the array: the requirement 4, the requirement 5 and the requirement 6 are based on the total occurrence number of different compatible arrays, and the second calibration can be performed by counting the number of times because each contradictory requirement has an incompatible array and the corresponding requirements in the array are not necessarily the same.
In this embodiment, for example: the requirements 5 and 6 exist in the remaining non-removed requirements, the requirements 5 and 6 are of the same grade, the necessary value of the requirement 5 is smaller than that of the requirement 6, and at the moment, the requirement 5 is removed.
In this embodiment, the manufacturing database is a manufacturing recipe that contains the requirements of different combinations and matches the requirements of the combinations consistently.
The beneficial effects of the technical scheme are as follows: the incompatible arrays of each contradictory demand in the demand array are analyzed to perform primary screening according to the necessary value and secondary screening according to the occurrence frequency, and finally, the validity screening of the demand is realized, so that the reservation of the effective demand can be ensured, the failure of scheme matching caused by the contradiction of the demand can be avoided, and an effective basis is provided for subsequent manufacturing.
The invention provides a manufacturing method of a semiconductor pulse high-voltage diode, which sequentially carries out manufacturing simulation according to each manufacturing step in the manufacturing scheme to obtain manufacturing process information under the corresponding manufacturing step, and comprises the following steps:
acquiring all manufacturing sections of each manufacturing step, and determining the number of tools to be set of the corresponding manufacturing section according to the total parameter amount of each manufacturing section and the section weight of each manufacturing section;
wherein N1 represents the number of tools to be set in the corresponding manufacturing section; n1 represents the number of key manufacturing points of the corresponding manufacturing section; oc represents the segment weight of the corresponding manufacturing segment; m represents the total amount of parameters of the corresponding manufacturing section; n represents the total amount of parameters of the manufacturing step; [] Representing a rounding symbol;
According to the number of the tools to be set, carrying out average setting on the manufacturing sections, and obtaining time capturing results of the capturing tools at each setting position on the parameters of the corresponding setting position;
comparing the capturing results of all times with the standard time results of the corresponding setting positions, and if the capturing results of all times are consistent with the standard time results of the corresponding setting positions, setting time normal labels for the capturing tools of the corresponding setting positions;
if the positions are inconsistent, searching inconsistent positions, determining time capture offset of the inconsistent positions, and setting time offset labels for corresponding capture tools;
determining a first capture time of a last tool of a first one of the adjacent manufacturing segments and a second capture time of the first tool of a second one of the adjacent manufacturing segments;
if the time interval difference between the second capturing time and the first capturing time is within a preset range, the setting positions of the last tool and the first tool are kept unchanged;
otherwise, determining the number to be supplemented, and overlapping the transition parts of the adjacent manufacturing sections at the same position according to the number to be supplemented;
wherein D represents the number to be supplemented; t (T) max The maximum value of the preset range is represented, and the value of the preset range is [0, T max ]；
Capturing the manufacturing steps based on the tool provided with the label and the tool provided with the transition part, and counting the captured manufacturing information according to the qualified time sequence to obtain the manufacturing process information.
In this embodiment, the placement position of the circular silicon wafer after film lamination in the automatic dicing saw, the cutting information after cutting the circular silicon wafer according to the size requirement of the diode chip pattern, the irradiation time of irradiating the ultraviolet sensitive film with the ultraviolet lamp, and the like, wherein each small step can be regarded as a corresponding manufacturing section.
In this embodiment, the total number of parameters of the manufacturing sections is preset according to the operations required to be performed by the corresponding manufacturing sections, and the weights are also preset, and the manufacturing schemes are known because the execution content and the execution weights of each manufacturing section in each manufacturing step are corresponding manufacturing schemes, which are preset by an expert.
In this embodiment, the number of tools is set to capture the corresponding manufacturing section by the tool during the simulated manufacturing process.
In this embodiment, the tool is for the purpose of automatically capturing background information and the like at system operation on a computer.
In this embodiment, the manufacturing section has its manufacturing time: in other words, a timing process is set from the initial time of 0 seconds to 15 seconds to record the irradiation time of the ultraviolet lamp, but at this time, the time delay and the like of the tool set at the position are determined by capturing the set position parameters of the manufacturing section, and then, in the process of performing the comparison analysis, the comparison is performed based on the monitoring result of the time sequence, so that the time sequence error cannot occur.
Such as: the manufacturing section is provided with: tool 1, tool 2, at this time, the capture time of tool 1 to position 1 on the timer progress is: 21:01:23, the capture time of tool 2 to position 2 on the timer progress is: 21:01:09, it is reasonable that the tool 2 is arranged behind the tool 1, but the time of the tool 1 after the actual capturing is behind the tool 2, that is, the tool 1 has time deviation, so that the time cheap label needs to be set, and the data captured by the tool 1 can be arranged in front of the data captured by the tool 2 based on the correct time by using the time deviation label, so that the rationality of the subsequent data comparison analysis is ensured; in this embodiment, since there may be some delay between adjacent manufacturing segments, etc., tools are also required in this section to ensure complete capture of information throughout the manufacturing step.
In this embodiment, the purpose of the overlapping setting is to set a plurality of tools for the position to integrate the last information of the part of the parameter, and ensure the information validity of the segment joint.
In this embodiment, the preset range is predetermined.
The first capturing time and the second capturing time are determined after the time labels are set, so that the reasonability of the number to be supplemented in the subsequent calculation is guaranteed.
In this embodiment, for example: tool 1: data 1, tool 2: data 2;
the information sequence after setting the time tag is: and at the moment, the data 1-2 is directly intercepted and compared with the standard 1-2 of the section, and the comparison data known by the data 1 does not need to be traced from a database for one time, so that the comparison time is greatly saved, and the manufacturing efficiency is improved.
The beneficial effects of the technical scheme are as follows: in the simulation manufacturing process, the sequential effectiveness of the subsequently captured data is ensured by comparing the number of tools for different manufacturing sections, the capturing time of each tool and the standard execution time of the step, and the complete capturing of the whole step is ensured by supplementing the tools, so that the integrity of process information acquisition is ensured and the expected requirement is met as much as possible.
The invention provides a manufacturing method of a semiconductor pulse high-voltage diode, which is used for carrying out qualification analysis on all manufacturing process information and comprises the following steps:
performing time alignment processing on the manufacturing process information of each manufacturing step and the standard process information, and judging whether inconsistent information exists or not;
if the corresponding manufacturing steps are not available, judging that the corresponding manufacturing steps are qualified;
otherwise, determining that the corresponding manufacturing step is unqualified, and locking the inconsistent information at the alignment time point.
In this embodiment, the inconsistency information refers to manufacturing parameters for which an anomaly exists.
The beneficial effects of the technical scheme are as follows: the efficiency of acquiring abnormal parameters is effectively improved through time alignment processing comparison, and a basis is provided for subsequent parameter correction.
The invention provides a manufacturing method of a semiconductor pulse high-voltage diode, which is used for determining an abnormal manufacturing process and a related manufacturing process of the abnormal manufacturing process and modifying corresponding manufacturing process parameters, and comprises the following steps:
inconsistent information in each abnormal manufacturing process is obtained, and a first carding vector is constructed;
sequentially inputting all the first carding vectors into an association analysis model, judging a first association relation between the first carding vectors, and simultaneously acquiring a second association relation between a first abnormal manufacturing process and the rest abnormal manufacturing processes according to the association manufacturing process of the first abnormal manufacturing process and the rest abnormal manufacturing process;
building an association line of the corresponding inconsistent information which is newly appeared for the first time after being ordered according to the time sequence according to the first association relation and the second association relation;
according to the line attribute of the built line, a modification scheme is called from an attribute-modification database, and inconsistent information on the corresponding built line is modified;
Wherein, the inconsistent information is the manufacturing process parameters which need to be modified.
In this embodiment, for example, in the manufacturing step 1, there are anomaly parameters 1, 2, 3, at which time the first comb vector= { anomaly parameters 1, 2, 3};
in this embodiment, the correlation analysis model is obtained by training samples based on all possible anomaly parameters and correlation relationships between different anomaly parameters and different manufacturing steps in different manufacturing steps, so that a first correlation relationship between the obtained vectors can be directly obtained, for example, the anomaly of the vector 1 can cause the anomaly in the next step, and the anomaly is exactly represented by the vector 2, that is, the model is obtained by constructing the model after the expert analyzes various possible correlation anomalies when determining the manufacturing scheme.
In this embodiment, if the subsequent separation of the non-conductive adhesive film and the uv-sensitive film mounting may fail due to insufficient irradiation time, it is indicated that the dicing manufacturing step is associated with the abnormal manufacturing step dicing, that is, the associated dicing manufacturing process in which the dicing is dicing, and at this time, the second association relationship exists.
In this embodiment, for example, step 1-step 2-step 3; step 2- -step 4;
At this time, the problem 001 newly appearing for the first time in the step 1 affects the step 2 and the step 3, but the problem 003 newly appearing for the first time in the step 2 affects the step 4, and at this time, after the step 2 is affected by the problem 001, the problem 002 appears in the step 2, but the problem 002 does not affect the step 4, so the above-mentioned related line exists.
In this embodiment, the attribute-modification database contains the type of problem that first occurs and the type of problem that occurs in the subsequent step, and the solution to the series of the initiated problems, so that the modification solution can be directly called to determine the modification solution, for example, by modifying the parameter a1 of the problem 001 to the parameter a2, some of the series of problems existing in the set-up route can be solved.
The beneficial effects of the technical scheme are as follows: the relation of the vectors is determined by constructing vectors of different processes and analyzing the models, the association route is effectively determined by the relation of the subsequent processes, and the reliability of the subsequent actual production is ensured by modifying the calling scheme.
The invention provides a manufacturing method of a semiconductor pulse high-voltage diode, which sets manufacturing association indexes for corresponding reserved steps according to the independent manufacturability and manufacturing flow sequence number of each reserved step in a reserved scheme, and constructs a manufacturing list, and comprises the following steps:
Determining a manufacturing engagement relationship between each retention step and each remaining retention step in the retention solution;
determining the independent manufacturability of the corresponding reserved step according to the manufacturing connection relation, screening connection relation with a correlation relation from the manufacturing connection relation, and constructing and obtaining a manufacturing flow sequence number according to the step number of the connection step corresponding to the connection relation with the correlation relation and the preset specified number of the corresponding reserved step;
establishing an associated index of the single manufacturability and the manufacturing flow sequence number of the same reservation step;
based on all the associated indexes, a manufacturing list is constructed.
In this embodiment, there are steps 1, 2, and 3, where step 1 is how to manufacture, and the result is not related to steps 2 and 3, at this time, the manufacturability of step 1 alone may be 1, but if there is a relationship with step 2 and no relationship with step 3, this relationship is a join relationship.
The beneficial effects of the technical scheme are as follows: by determining the individual manufacturability and the manufacturing flow sequence number, a comparison standard is conveniently specified, and convenience is provided for subsequent adjustment of actual production.
The invention provides a manufacturing method of a semiconductor pulse high-voltage diode, which carries out real-time correction and adjustment on the actual manufacturing process and comprises the following steps:
Monitoring and recording the process progress and process data of each manufacturing step in the actual manufacturing process in real time;
performing significance labeling according to the related steps related to each related index in the manufacturing list, and determining the labeling times of each reserved step according to the significance labeling result;
determining whether the parameter range of the standard parameter related in the corresponding reservation step needs to be reduced and adjusted according to the marking times and the independent manufacturability of the corresponding reservation step;
if the labeling times are smaller than the preset times, judging that the shrinkage adjustment is not needed;
otherwise, the parameter range of the corresponding standard parameter is reduced and adjusted;
wherein R is 01 A left boundary value representing a parameter range of the corresponding standard parameter; r is R 02 Right boundary values representing parameter ranges for the respective standard parameters; m1 represents the corresponding labeling times; m0 represents a preset number of times; r is R z Intermediate values representing parameter ranges of the respective standard parameters; ω represents the individual manufacturability of the corresponding retention step; r1 represents a value obtained by adjusting the left boundary of a parameter range of the corresponding standard parameter; r2 represents a value obtained by adjusting the right boundary of the parameter range of the corresponding standard parameter;
if R1 < R2, then R1 is replaced by R 01 Replacement of R2 with R 02 Realizing the reduction adjustment;
if R1 > R2 and R2 < R 01 At this time, R is reserved 01 Unchanged, and R2 is replaced by R 02 Realizing the reduction adjustment;
if r1=r2, then this is as followsFor R 01 Left side zoom-out adjustment is performed +.>For R 02 Performing right side reduction adjustment;
and according to the adjustment result, acquiring a manufacturing supervision standard based on the manufacturing list, comparing the manufacturing supervision standard with process data of different manufacturing progress in each manufacturing step one by one, determining abnormal data in the corresponding progress, reminding, and realizing real-time correction and adjustment of the actual manufacturing process.
In this embodiment, steps 1-2-3; step 2-step 4, wherein the labeling times of step 1, step 3 and step 4 are respectively 1, the labeling times of step 2 are 2, and the like.
In this embodiment, the parameter ranges of the standard parameters are all determined in advance, and the standard parameters are determined when the expert determines the manufacturing scheme, and the original parameters are adjusted accordingly because certain errors exist in the simulation or actual process.
In this embodiment, the manufacturing supervision standard is the final standard range corresponding to each standard parameter.
The beneficial effects of the technical scheme are as follows: through marking the reserved steps, the associated frequency of the reserved steps is conveniently and effectively determined, whether the range needs to be adjusted is further determined, the follow-up accuracy of the requirements on certain parameters is guaranteed, and manufacturing expectations can be further met.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
Claims (6)
1. A method of manufacturing a semiconductor pulsed high voltage diode, comprising:
step 1: collecting the necessity requirement of manufacture and calling the related manufacturing scheme from a manufacturing database;
step 2: sequentially performing manufacturing simulation according to each manufacturing step in the manufacturing scheme, and acquiring manufacturing process information under the corresponding manufacturing step;
step 3: performing qualification analysis on all manufacturing process information, and reserving the manufacturing scheme when the analysis result is qualified, otherwise, determining an abnormal manufacturing process and an associated manufacturing process of the abnormal manufacturing process, and modifying corresponding manufacturing process parameters to obtain a qualified scheme and reserving the qualified scheme;
step 4: setting a manufacturing association index to the corresponding reservation step according to the independent manufacturability and the manufacturing flow sequence number of each reservation step in the reservation scheme, and constructing a manufacturing list;
Step 5: in the actual production process, the process progress and the process data of the actual manufacturing process are recorded in real time, and compared and analyzed one by one with the manufacturing supervision standard generated according to the manufacturing list, so that the actual manufacturing process is corrected and adjusted in real time, and the manufacturing of the semiconductor pulse high-voltage diode is realized;
wherein collecting manufacturing necessity requirements and retrieving relevant manufacturing scenarios from a manufacturing database comprises:
acquiring each necessity requirement of a diode to be manufactured, constructing a requirement array, inputting the requirement array into a contradiction analysis list, and determining non-contradiction requirements, contradiction requirements and mutually incompatible requirements consistent with the contradiction requirements existing in the requirement array;
according to the set necessary level of each necessary requirement in the requirement acquisition process, determining an incompatible array of different contradictory requirements and corresponding mutually incompatible requirements;
determining the maximum necessary level in each incompatible array and whenWhen the first calibration is performed to the maximum necessary level in the corresponding incompatible array, wherein y0 max Representing a necessary value corresponding to the maximum necessary level; y 0) 1 i1 Representing a necessary value corresponding to the i1 st remaining necessary level of all remaining necessary levels n in the incompatible array;
When (when)When the method is used, counting the total occurrence times of all the incompatible arrays based on each requirement in the corresponding incompatible arrays, and carrying out second calibration on the requirement of the minimum total occurrence times;
based on the first calibration result and the second calibration result, eliminating repeated demands, and judging whether contradictory demands exist in the residual non-eliminated demands;
if the requirements exist, sorting the sizes of the necessary values of the necessary levels of the residual non-removed requirements, removing the requirements with small necessary values if the same-level contradiction exists, and removing the requirements with low levels if the different-level contradiction exists;
according to the removed requirements and the non-contradictory requirements, a consistent manufacturing scheme is called from a manufacturing database; wherein, carry out real-time correction adjustment to actual manufacturing process, include:
monitoring and recording the process progress and process data of each manufacturing step in the actual manufacturing process in real time;
performing significance labeling according to the related steps related to each related index in the manufacturing list, and determining the labeling times of each reserved step according to the significance labeling result;
determining whether the parameter range of the standard parameter related in the corresponding reservation step needs to be reduced and adjusted according to the marking times and the independent manufacturability of the corresponding reservation step;
If the labeling times are smaller than the preset times, judging that the shrinkage adjustment is not needed;
otherwise, the parameter range of the corresponding standard parameter is reduced and adjusted;
wherein R is 01 A left boundary value representing a parameter range of the corresponding standard parameter; r is R 02 Representing the corresponding standardRight boundary value of parameter range of parameter; m1 represents the corresponding labeling times; m0 represents a preset number of times; r is R Z Intermediate values representing parameter ranges of the respective standard parameters; ω represents the individual manufacturability of the corresponding retention step; r1 represents a value obtained by adjusting the left boundary of a parameter range of the corresponding standard parameter; r2 represents a value obtained by adjusting the right boundary of the parameter range of the corresponding standard parameter;
if R1 < R2, then R1 is replaced by R 01 Replacement of R2 with R 02 Realizing the reduction adjustment;
if R1 > R2 and R2 < R 01 At this time, R is reserved 01 Unchanged, and R2 is replaced by R 02 Realizing the reduction adjustment;
if r1=r2, then this is as followsFor R 01 Left side zoom-out adjustment is performed +.>For R 02 Performing right side reduction adjustment;
and according to the adjustment result, acquiring a manufacturing supervision standard based on the manufacturing list, comparing the manufacturing supervision standard with process data of different manufacturing progress in each manufacturing step one by one, determining abnormal data in the corresponding progress, reminding, and realizing real-time correction and adjustment of the actual manufacturing process.
2. The method of manufacturing a semiconductor pulsed high voltage diode of claim 1, wherein the incompatible array comprises: contradictory requirements and setting necessary levels of contradictory requirements, corresponding mutually incompatible requirements and setting necessary levels of mutually incompatible requirements.
3. The method of manufacturing a semiconductor pulse high voltage diode according to claim 1, wherein manufacturing simulation is sequentially performed for each manufacturing step in the manufacturing scheme, and manufacturing process information for the corresponding manufacturing step is acquired, comprising:
acquiring all manufacturing sections of each manufacturing step, and determining the number of tools to be set of the corresponding manufacturing section according to the total parameter amount of each manufacturing section and the section weight of each manufacturing section;
wherein N1 represents the number of tools to be set in the corresponding manufacturing section; n1 represents the number of key manufacturing points of the corresponding manufacturing section; oc represents the segment weight of the corresponding manufacturing segment; m represents the total amount of parameters of the corresponding manufacturing section; n represents the total amount of parameters of the manufacturing step; [] Representing a rounding symbol;
according to the number of the tools to be set, carrying out average setting on the manufacturing sections, and obtaining time capturing results of the capturing tools at each setting position on the parameters of the corresponding setting position;
Comparing the capturing results of all times with the standard time results of the corresponding setting positions, and if the capturing results of all times are consistent with the standard time results of the corresponding setting positions, setting time normal labels for the capturing tools of the corresponding setting positions;
if the positions are inconsistent, searching inconsistent positions, determining time capture offset of the inconsistent positions, and setting time offset labels for corresponding capture tools;
determining a first capture time of a last tool of a first one of the adjacent manufacturing segments and a second capture time of the first tool of a second one of the adjacent manufacturing segments;
if the time interval difference between the second capturing time and the first capturing time is within a preset range, the setting positions of the last tool and the first tool are kept unchanged;
otherwise, determining the number to be supplemented, and overlapping the transition parts of the adjacent manufacturing sections at the same position according to the number to be supplemented;
wherein D represents the number to be supplemented; t (T) max The maximum value of the preset range is represented, and the value of the preset range is [0, T max ]；
Capturing the manufacturing steps based on the tool provided with the label and the tool provided with the transition part, and counting the captured manufacturing information according to the qualified time sequence to obtain the manufacturing process information.
4. The method of manufacturing a semiconductor pulsed high voltage diode of claim 1, wherein performing a qualification analysis on all manufacturing process information comprises:
performing time alignment processing on the manufacturing process information of each manufacturing step and the standard process information, and judging whether inconsistent information exists or not;
if the corresponding manufacturing steps are not available, judging that the corresponding manufacturing steps are qualified;
otherwise, determining that the corresponding manufacturing step is unqualified, and locking the inconsistent information at the alignment time point.
5. The method of manufacturing a semiconductor pulsed high voltage diode of claim 4, wherein determining an abnormal manufacturing process and associated manufacturing processes of the abnormal manufacturing process and modifying corresponding manufacturing process parameters comprises:
inconsistent information in each abnormal manufacturing process is obtained, and a first carding vector is constructed;
sequentially inputting all the first carding vectors into an association analysis model, judging a first association relation between the first carding vectors, and simultaneously acquiring a second association relation between a first abnormal manufacturing process and the rest abnormal manufacturing processes according to the association manufacturing process of the first abnormal manufacturing process and the rest abnormal manufacturing process;
building an association line of the corresponding inconsistent information which is newly appeared for the first time after being ordered according to the time sequence according to the first association relation and the second association relation;
According to the line attribute of the built line, a modification scheme is called from an attribute-modification database, and inconsistent information on the corresponding built line is modified;
wherein, the inconsistent information is the manufacturing process parameters which need to be modified.
6. The method of manufacturing a semiconductor pulsed high voltage diode of claim 1, wherein setting a manufacturing association index to each reservation step in a reservation scheme and constructing a manufacturing list according to a separate manufacturability and manufacturing flow number of each reservation step, comprises:
determining a manufacturing engagement relationship between each retention step and each remaining retention step in the retention solution;
determining the independent manufacturability of the corresponding reserved step according to the manufacturing connection relation, screening connection relation with a correlation relation from the manufacturing connection relation, and constructing and obtaining a manufacturing flow sequence number according to the step number of the connection step corresponding to the connection relation with the correlation relation and the preset specified number of the corresponding reserved step;
establishing an associated index of the single manufacturability and the manufacturing flow sequence number of the same reservation step;
based on all the associated indexes, a manufacturing list is constructed.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200928642A (en) * | 2007-12-31 | 2009-07-01 | Ind Tech Res Inst | Reliability detecting and feeding back system and method thereof for manufacturing equipment |
| CN104407589A (en) * | 2014-11-26 | 2015-03-11 | 西北工业大学 | Workshop manufacturing process-oriented active sensing and anomaly analysis method of real-time generating performance |
| CN110262437A (en) * | 2019-07-18 | 2019-09-20 | 闽南理工学院 | A kind of intelligence manufacture and control engineering experimental exercising information processing system and method |
| CN111151849A (en) * | 2019-06-24 | 2020-05-15 | 上海明据信息科技有限公司 | Intelligent system for monitoring and predictively maintaining welding gun in real time |
| CN114429311A (en) * | 2022-02-17 | 2022-05-03 | 广州志橙半导体有限公司 | Dynamic monitoring method and system for semiconductor manufacturing process |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2617981A1 (en) * | 2005-08-05 | 2007-02-15 | Pfizer Products Inc. | Automated batch manufacturing |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200928642A (en) * | 2007-12-31 | 2009-07-01 | Ind Tech Res Inst | Reliability detecting and feeding back system and method thereof for manufacturing equipment |
| CN104407589A (en) * | 2014-11-26 | 2015-03-11 | 西北工业大学 | Workshop manufacturing process-oriented active sensing and anomaly analysis method of real-time generating performance |
| CN111151849A (en) * | 2019-06-24 | 2020-05-15 | 上海明据信息科技有限公司 | Intelligent system for monitoring and predictively maintaining welding gun in real time |
| CN110262437A (en) * | 2019-07-18 | 2019-09-20 | 闽南理工学院 | A kind of intelligence manufacture and control engineering experimental exercising information processing system and method |
| CN114429311A (en) * | 2022-02-17 | 2022-05-03 | 广州志橙半导体有限公司 | Dynamic monitoring method and system for semiconductor manufacturing process |
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