CN116685708A

CN116685708A - Magnetron sputtering equipment and control method thereof

Info

Publication number: CN116685708A
Application number: CN202180032752.4A
Authority: CN
Inventors: 王晓; 朱靖华
Original assignee: Huawei Technologies Co Ltd
Current assignee: Huawei Technologies Co Ltd
Priority date: 2021-12-27
Filing date: 2021-12-27
Publication date: 2023-09-01
Also published as: WO2023122900A1

Abstract

The embodiment of the application provides magnetron sputtering equipment and a control method thereof, and relates to the technical field of magnetron sputtering. The magnetron sputtering equipment comprises a shell, a substrate bearing device, a target bearing device, a cold energy supply device, at least two target partition cooling devices and at least two substrate multi-partition cooling devices. At least two target partition cooling devices are arranged on one side of the target on the target bearing device, which is far away from the substrate bearing device, and correspond to a plurality of positions of the target. The at least two target partition cooling devices can respectively and correspondingly cool a plurality of different areas on the target, and the temperatures of the areas on the target can be respectively and accurately and rapidly controlled. The substrate partition cooling device can respectively correspond to a plurality of different areas on the substrate, and the temperatures of the areas on the substrate can be accurately and quickly adjusted. Thereby improving the thickness of the film layer and the uniformity of the film resistance, and being capable of matching the requirements of advanced process development on various performance parameters.

Description

Magnetron sputtering equipment and control method thereof

Technical Field

The application relates to the technical field of magnetron sputtering, in particular to magnetron sputtering equipment and a control method thereof.

Background

The magnetron sputtering device is a key device used in the semiconductor process, and can be applied to a plurality of processes such as copper interconnection, contact hole (contact), metal gate (metal gate) and the like. With the development of semiconductor manufacturing processes, requirements for critical dimensions (critical dimension, CD), aspect ratio, hole filling capability, step coverage (step coverage) and the like are becoming more and more stringent.

In the running process of the existing magnetron sputtering equipment, a thermal field is generated by the substrate and the target, and the temperature of different positions on the substrate and the target has a certain difference from the ideal process temperature. Therefore, the existing magnetron sputtering apparatus encounters more and more difficulties in meeting the above-mentioned multiple parameter performance of advanced process requirements.

Disclosure of Invention

The embodiment of the application provides a magnetron sputtering device and a control method thereof, which are used for reducing the difference between the temperatures of different positions of a substrate and a target and the ideal process temperature so as to meet the performance parameter requirements in the aspects of critical dimension, width-depth ratio hole filling capability, step coverage rate and the like of advanced process requirements.

In order to achieve the above purpose, the application adopts the following technical scheme:

in a first aspect, an embodiment of the present application provides a magnetron sputtering apparatus, including a casing, a substrate carrying device, a target carrying device, a cooling capacity supply device, and a target partition cooling device. Wherein, the shell is internally provided with a sputtering cavity. The substrate carrying device can be installed in the sputtering cavity and used for fixing the substrate. The target bearing device is arranged on the shell and is used for fixing the target. The target on the target carrier may be opposite a substrate on the substrate carrier. The target partition cooling devices are two or more, and all the target partition cooling devices can be arranged on one side of the target on the target bearing device, which is far away from the substrate bearing device, and correspond to a plurality of positions of the target on the target bearing device respectively. In the embodiment of the application, two or more target partition cooling devices can respectively correspond to a plurality of different areas on the cooled target, and the temperatures of the areas on the target can be respectively controlled so as to meet the process temperature requirements of each area of the actual target. Therefore, the thickness of the thin film layer formed by sputtering and the uniformity of the thin film resistor are improved, and the requirements of advanced process development on performance parameters such as critical dimension, width-depth ratio, hole filling capability, step coverage rate and the like can be matched. Meanwhile, the service life of the target material can be prolonged better, and the problem of asymmetry in the magnetron sputtering process can be improved.

In some possible embodiments of the application, the at least two target zone cooling devices comprise a circular target cooling device and at least one annular target cooling device. Wherein, circular target cooling device corresponds with the central region of target on the target loading attachment. The annular target cooling device is sleeved on the outer side of the round target cooling device and corresponds to the middle area or the edge area of the target on the target bearing device. The circular target cooling device can be used for the central area of the target, the annular target cooling device can be used for cooling the middle area or the edge area of the target, and the circular target cooling device is suitable for a scheme that the target is circular.

In some possible embodiments of the present application, the magnetron sputtering apparatus further includes an auxiliary cooling device, and the auxiliary cooling device is disposed in the enclosure. And the auxiliary cooling device is positioned on one side of at least two target partition cooling devices, which is far away from the target. The auxiliary cooling device can further cool the whole target material, so that the cooling speed of the whole target material is increased.

In some possible embodiments of the present application, the magnetron sputtering apparatus further includes a cooling capacity supply device, a plurality of first flow control devices, a plurality of target temperature detection devices, and a target temperature control device. Wherein, the cold energy supply device is communicated with at least two target partition cooling devices. The cooling capacity supply device may supply a cooling medium, such as any one of cooling water, a mixed solution of water and water (for example, a mixed solution of water and propylene glycol), ethylene glycol, propylene glycol, and silicone oil, to two or more target partition cooling devices. The plurality of first flow control devices are respectively arranged on connecting pipelines between the cold energy supply device and inlets of the at least two target partition cooling devices. For example, the first flow control device may be a liquid flow controller. The target temperature detection devices are respectively arranged on the at least two target partition cooling devices. The plurality of target temperature detection devices can be used for detecting two or more target partition cooling devices respectively. The target temperature detection device can be a thermocouple, an optical coupling pyrometer, a thermal probe or the like. The target temperature control device is connected with the first flow control device and the target temperature detection device. The target temperature control device can be used for controlling the first flow control devices to adjust the flow of the cooling medium entering the corresponding target partition cooling device according to the temperature values detected by the target temperature detection devices. Therefore, the magnetron sputtering equipment can automatically adjust the flow of the cooling medium entering the plurality of target partition cooling devices through the plurality of first flow control devices, so that the partition thermal field adjustment of the targets is realized, and the temperature adjustment of each region of the targets in the sputtering process is more accurate.

In some possible embodiments of the present application, the magnetron sputtering apparatus further includes a plurality of zone heating devices, a plurality of substrate temperature detecting devices, and a substrate temperature controlling device. The plurality of zone heating devices are respectively arranged on one side of the substrate bearing device, which is close to the target bearing device, and can be respectively used for heating a plurality of positions of the substrate. The zone heating means may be any of a radiant heater, a conductive heat source, a resistive heater, an inductive heater or a microwave heater. The substrate temperature detection devices are respectively arranged on the substrate bearing device and are respectively corresponding to the partition heating devices. The plurality of substrate temperature detecting devices may be used to detect the temperatures of the plurality of zone heating devices, respectively, to indirectly obtain the temperatures of the respective zones on the substrate. The substrate temperature sensing device may be a thermocouple, an optically coupled pyrometer, a thermal probe, or the like. The substrate temperature control device is connected with the plurality of zone heating devices and the plurality of substrate temperature detection devices. The substrate temperature control device may be a controller. The substrate temperature control device may be used to adjust the heating power of the plurality of zone heating devices, respectively, according to the detection values of the plurality of substrate temperature detection devices. The magnetron sputtering equipment can respectively carry out power adjustment on the plurality of zone heating devices according to the real-time temperature of each zone on the substrate. Thereby, an automatic adjustment of the thermal field for each area on the substrate is achieved.

In some possible embodiments of the present application, the magnetron sputtering apparatus further includes at least two substrate zone cooling devices, the at least two substrate zone cooling devices being mounted below the plurality of zone heating devices. And at least two substrate partition cooling devices are provided corresponding to the plurality of partition heating devices, respectively. Similarly, the thermal fields of all areas on the substrate can be further automatically adjusted through two or more substrate partition cooling devices, so that the temperature control of the substrate is more accurate in the process of sputtering.

In some possible embodiments of the application, the at least two substrate zone cooling devices comprise a circular substrate cooling device and at least one annular substrate cooling device. The circular substrate cooling device corresponds to a central region of the plurality of zone heating devices. The annular substrate cooling device is sleeved on the outer side of the circular substrate cooling device and corresponds to the middle area or the edge area of the plurality of zone heating devices. A circular substrate cooling device may be used for the central region of the substrate and a ring-shaped substrate cooling device may be used for cooling the middle region or edge region of the substrate, adapted for a circular substrate solution.

In some possible embodiments of the present application, the magnetron sputtering apparatus further includes a cooling capacity supply device and a plurality of second flow control devices. Wherein the cold energy supply device is communicated with at least two substrate partition cooling devices. A plurality of second flow control devices are mounted on the connecting conduit between the cold supply device and the inlets of the at least two substrate zone cooling devices. The substrate temperature control device is connected with a plurality of second flow control devices and a substrate temperature detection device. The substrate temperature control means may be adapted to control the second flow control means to adjust the flow of the cooling medium into the corresponding substrate zone cooling means in accordance with the temperatures detected by the plurality of substrate temperature detection means. Therefore, the magnetron sputtering equipment can regulate the flow entering the plurality of substrate partition cooling devices according to the real-time temperature of each region on the substrate, and further regulate the thermal field of each region on the substrate, so that the thermal field regulation of the substrate is more accurate.

In a second aspect, an embodiment of the present application further includes a control method for the magnetron sputtering apparatus. The control method comprises the following steps:

and acquiring the current temperature values of a plurality of areas of the target.

And adjusting the flow of the cooling medium entering the corresponding target partition cooling device according to the current temperature values of the multiple areas of the target.

The control method of the embodiment of the application can also realize the technical effect that the magnetron sputtering equipment automatically adjusts the thermal field of each region on the target in the embodiment, and the two can solve the same technical problems, and the description is omitted here.

In some possible embodiments of the present application, adjusting the flow rate of the cooling medium entering the corresponding target zone cooling device according to the current temperature values of the multiple regions of the target specifically includes:

when the current temperature value of any region of the target is larger than the corresponding first preset partition target temperature threshold value, increasing the flow of the cooling medium entering the corresponding target partition cooling device.

And when the temperature value detected by the current temperature value of any region of the target is smaller than the corresponding second preset partition target temperature threshold value, reducing the flow of the cooling medium entering the corresponding target partition cooling device.

When the temperature value detected by the current temperature value of any region of the target is between the corresponding first preset partition target temperature threshold value and the second preset partition target temperature threshold value, the flow of the cooling medium entering the corresponding target partition cooling device is kept unchanged.

Therefore, in the sputtering process, the reasonable temperature adjustment can be carried out on each region on the target material so as to meet various parameter requirements of advanced technology.

In some possible embodiments of the present application, the magnetron sputtering apparatus further includes at least two substrate partition cooling devices, and the at least two substrate partition cooling devices are installed below the plurality of partition heating devices and are respectively disposed corresponding to the plurality of partition heating devices. At least two substrate zone cooling devices are respectively communicated with the cold energy supply device. The control method of the magnetron sputtering equipment further comprises the following steps:

current temperature values for a plurality of regions of the substrate are obtained.

And adjusting the heating power of the corresponding zone heating device and the flow of the cooling medium entering the substrate zone cooling device according to the current temperature values of the plurality of areas of the substrate.

Therefore, the thermal field of the substrate can be automatically adjusted to meet the requirements of the sputtering process.

In some possible embodiments of the present application, adjusting the heating power entering the corresponding zone heating device and the flow rate of the cooling medium in the substrate zone cooling device according to the current temperature values of the plurality of regions of the substrate specifically includes:

when the current temperature value of the i areas of the substrate is larger than the corresponding third preset partition target temperature threshold value, the heating power of the corresponding partition heating device is kept unchanged, and the flow of the cooling medium entering the corresponding substrate partition cooling device is increased. Wherein i satisfies: p is more than or equal to i and more than or equal to 1, and P is the total number of substrate temperature detection devices in the magnetron sputtering equipment.

And when the current temperature value of the P areas of the substrate is larger than the corresponding third preset partition target temperature threshold value, reducing the heating power of the plurality of partition heating devices, and increasing the flow of cooling medium entering the plurality of substrate partition cooling devices.

And when the current temperature value of the i areas of the substrate is smaller than the corresponding fourth preset partition target temperature threshold value, increasing the heating power of the corresponding partition heating device, and keeping the flow of the cooling medium entering the corresponding substrate partition cooling device unchanged.

And when the current temperature value of the P areas of the substrate is smaller than the corresponding fourth preset partition target temperature threshold value, increasing the heating power of the plurality of partition heating devices and reducing the flow of cooling medium entering the corresponding substrate partition cooling devices.

When the current temperature value of any area of the substrate is between the corresponding third preset partition target temperature threshold value and the fourth preset partition target temperature threshold value, the heating power of the corresponding partition heating device is kept unchanged, and the flow of the cooling medium entering the corresponding substrate partition cooling device is kept unchanged.

Therefore, in the sputtering process, the temperature of each area on the substrate can be reasonably adjusted to meet the requirements of advanced processes.

Drawings

FIG. 1 is a schematic diagram of a magnetron sputtering apparatus according to an embodiment of the present application;

FIG. 2 is a schematic diagram of the structure of a substrate and a thin film layer;

FIG. 3 is a schematic view of a magnetron sputtering apparatus according to an embodiment of the application having a target partition cooling device;

FIG. 4 is a schematic diagram of a structure in which a target partition cooling device and a cooling capacity supply device are communicated in a magnetron sputtering apparatus according to an embodiment of the application;

FIG. 5 is a schematic structural view of a magnetron sputtering apparatus according to an embodiment of the application, including a circular target partition cooling device and an annular target cooling device;

FIG. 6 is a schematic structural diagram of a magnetron sputtering apparatus according to an embodiment of the application, including a rectangular target partition cooling device and a rectangular annular target cooling device;

FIG. 7 is a schematic structural diagram of a magnetron sputtering apparatus according to an embodiment of the application, including a circular target partition cooling device and three annular target cooling devices;

FIG. 8 is a schematic diagram of a structure in which 4 rectangular target partition cooling devices of a magnetron sputtering apparatus according to an embodiment of the application are arranged in an array;

FIG. 9 is a schematic view showing a structure of a magnetron sputtering apparatus having an auxiliary cooling device according to an embodiment of the application;

FIG. 10 is a schematic view showing a structure of a magnetron sputtering apparatus according to an embodiment of the application having a target temperature detecting device and a first flow rate controlling device;

FIG. 11 is a schematic diagram showing the distribution of a plurality of target temperature detection devices on a target zone cooling device in a magnetron sputtering apparatus according to an embodiment of the application;

FIG. 12 is a schematic view showing a structure of a magnetron sputtering apparatus having a plurality of zone heating devices according to an embodiment of the application;

FIG. 13 is a schematic view showing a structure of a magnetron sputtering apparatus having a plurality of substrate partition cooling devices according to an embodiment of the application;

FIG. 14 is a schematic diagram showing a structure in which a target partition cooling device, a substrate partition cooling device and a cooling capacity supply device are communicated in a magnetron sputtering apparatus according to an embodiment of the present application;

FIG. 15 is a schematic view showing a structure of a magnetron sputtering apparatus according to an embodiment of the application including a circular substrate zone cooling device and a ring-shaped substrate cooling device;

FIG. 16 is a schematic view showing a structure of a magnetron sputtering apparatus according to an embodiment of the application including a rectangular substrate partition cooling device and a rectangular annular substrate cooling device;

FIG. 17 is a schematic view showing a structure of a magnetron sputtering apparatus according to an embodiment of the application including a circular substrate zone cooling device and three annular substrate cooling devices;

FIG. 18 is a schematic diagram showing the arrangement of 4 rectangular substrate partition cooling devices in an array in a magnetron sputtering apparatus according to an embodiment of the application;

FIG. 19 is a schematic view showing a structure of a magnetron sputtering apparatus according to an embodiment of the application, wherein the magnetron sputtering apparatus has a substrate temperature detecting device, a second flow rate controlling device and a substrate temperature controlling device;

FIG. 20 is a schematic diagram showing the distribution of a plurality of substrate temperature detecting devices on a substrate zone cooling device in a magnetron sputtering apparatus according to an embodiment of the application;

FIG. 21 is a schematic flow chart of a control method of a magnetron sputtering apparatus for controlling a target temperature according to an embodiment of the application;

FIG. 22 is a schematic flow chart of a control method of a magnetron sputtering apparatus for specifically controlling a target temperature according to an embodiment of the application;

FIG. 23 is a schematic flow chart of a control method of a magnetron sputtering apparatus for controlling a substrate temperature according to an embodiment of the application;

FIG. 24 is a flow chart of a method for controlling a magnetron sputtering apparatus according to an embodiment of the application for specifically controlling a substrate temperature;

fig. 25 is a schematic diagram showing a control method of a magnetron sputtering apparatus according to an embodiment of the application for realizing correspondence between a substrate topography parameter and temperature compensation.

Reference numerals:

100-magnetron sputtering equipment, 1-casing, 101-sputtering chamber, 2-substrate carrying device, 21-substrate base, 22-electrostatic chuck, 3-target carrying device, 4-partition heating device, 5-magnet moving device, 60-target cooling device, 6-target partition cooling device, 61-first cooling medium carrying chamber, 62-first inlet, 62-first outlet, 601 a-circular target cooling device, 602 a-circular target cooling device, 601 b-rectangular target cooling device, 602 b-rectangular annular target cooling device, 601 c-rectangular target partition cooling device, 7-cold amount supply device, 8-auxiliary cooling device, 9-target temperature detection device, 10-first flow control device, 11-substrate partition cooling device, 111-second cooling medium carrying chamber, 112-second inlet, 113-second outlet, 1101 a-circular substrate cooling device, 1102 a-circular substrate cooling device, 1101 b-rectangular annular substrate cooling device, 1102 b-rectangular annular substrate cooling device, 601 c-rectangular substrate cooling device, 12-substrate temperature detection device, 11-substrate partition cooling device, 14-second cooling device, 1101 b-rectangular annular substrate cooling device, 14-second flow control device, 14-target temperature recovery device, and 16-target temperature control device.

Detailed Description

The following description of the technical solutions according to the embodiments of the present application will be given with reference to the accompanying drawings in the embodiments of the present application, and it is apparent that the described embodiments are only some embodiments of the present application, but not all embodiments.

Hereinafter, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first", "a second", etc. may explicitly or implicitly include one or more such feature.

Furthermore, in the present application, the terms of orientation such as "upper," "lower," "left," "right," "horizontal," and "vertical" are defined with respect to the orientation in which the components in the drawings are schematically disposed, and it should be understood that these directional terms are relative terms, which are used for descriptive and clarity with respect thereto, and which may be correspondingly altered in response to changes in the orientation in which the components in the drawings are disposed.

In the present application, unless explicitly specified and limited otherwise, the term "connected" is to be construed broadly, and for example, "connected" may be either fixedly connected, detachably connected, or integrally formed; can be directly connected or indirectly connected through an intermediate medium.

Referring to fig. 1, a magnetron sputtering apparatus 100 of an embodiment of the application includes a cabinet 1, a substrate carrying device 2, a target carrying device 3, and a zone heating device 4.

Wherein, a sputtering chamber 101 is arranged in the shell 1. The substrate carrier 2 may be installed in the sputtering chamber 101 and used to fix a substrate 200 (wafer). As shown in fig. 1, the substrate carrying device 2 may include a substrate base 21 and an electrostatic chuck 22, the electrostatic chuck 22 being located above the substrate base 21, and the substrate 200 may be adsorbed on the electrostatic chuck 5. The zone heating device 4 is located between the substrate base 21 and the electrostatic chuck 22.

The target carrying device 3 is disposed on the casing 1 and is used for mounting the target 300. The target 300 on the target carrier 3 may be disposed opposite the substrate 200 on the substrate carrier 2.

The zone heating device 4 may be installed at a side of the substrate carrier 2 near the target carrier 3 and used to heat the substrate 200. For example, the zone heating device 4 in fig. 1 is located between the substrate base 21 and the electrostatic chuck 22. The zone heating means 4 may be an ultraviolet lamp, a halogen lamp, a laser diode, a resistive heater, a microwave-activated heater, a light emitting diode, or any other suitable heating element, alone or in combination.

In order to implement the sputtering function of the magnetron sputtering apparatus 100, the magnetron sputtering apparatus 100 further includes a magnet rotating device 5 as shown in fig. 1, and the magnet in the magnet rotating device 5 can rotate. Thus, sputtering of each region on the target 300 can be controlled to be uniform.

When the magnetron sputtering apparatus 100 is in operation, the sputtering chamber 101 of the magnetron sputtering apparatus 100 is filled with an inert gas (such as argon) required for the reaction. The target 300 is connected to the negative electrode of the power source, and the substrate 200 is connected to the positive electrode of the power source, respectively. Under the influence of the electric field, inert gas molecules within the sputtering chamber 101 are ionized to generate a charged charge. Because a certain negative high voltage is applied to the target 300, the probability of ionization of the inert gas and electrons emitted from the cathode under the action of the magnetic field increases, and a high-density plasma is formed near the cathode. Under the action of an electric field, the gas positive ions accelerate to bombard the surface of the cathode target 300, molecules, atoms, ions, electrons and the like on the surface of the target 300 are sputtered, the sputtered particles have certain kinetic energy and are directed to the surface of the substrate 200 with higher temperature along a certain direction, and a film layer is accumulated on the surface of the substrate 200.

During the sputtering process described above, a thermal field is generated on both the target 300 and the substrate 200. The sputtering rates are different for each region on the target 300 due to the different temperature profiles of the target 300. Therefore, the temperature distribution on the target 300 affects the crystal phase structure, thickness and film resistance uniformity of the film. Further, parameters such as critical dimensions, aspect ratios, hole filling capability, and step coverage (see fig. 2, step coverage=b/a or C/a, a is the top thickness of the thin film layer 1000, B is the sidewall thickness of the thin film layer 1000, and C is the bottom thickness of the thin film layer 1000) of different regions on the thin film layer formed by sputtering are affected.

As shown in fig. 1, if a target cooling device 60 capable of covering the back surface of the whole target 300 is directly disposed in the magnetron sputtering apparatus 100, and a single cooling device dissipates heat to all positions of the target 300, the sputtering speeds of different regions of the target 300 cannot be precisely controlled, so that the temperatures of a plurality of positions on the target 300 cannot meet the thermal field distribution requirement required by sputtering. Therefore, the parameters such as critical dimension, width-depth ratio, hole filling capability, step coverage rate and the like cannot be formed by sputtering, and all meet the requirements of advanced technology.

Based on this, the magnetron sputtering apparatus 100 according to the embodiment of the application further includes N target partition cooling devices 6 as shown in FIG. 3, where N is not less than 2. The target partition cooling device 6 may be a water cooler. The N target zone cooling devices 6 may each be mounted on a side of the target 300 on the target carrier 3 remote from the substrate carrier 2. The N target zone cooling devices 6 correspond to a plurality of region positions of the target 300 on the target carrier 3. Therefore, in the embodiment of the present application, the N target partition cooling devices 6 may respectively correspond to a plurality of different areas on the cooled target 300, and the temperatures of a plurality of positions on the target 300 may be respectively controlled so as to meet the process temperature requirements of each area of the actual target 300. Therefore, the thickness of the thin film layer formed by sputtering and the uniformity of the thin film resistor are improved, and the requirements of advanced process development on performance parameters such as critical dimension, width-depth ratio, hole filling capability, step coverage rate and the like can be matched. Meanwhile, the service life of the target 300 can be prolonged better, and the problem of asymmetry (asymmetry) existing in the magnetron sputtering process can be improved.

The magnetron sputtering apparatus 100 further includes a cooling capacity supply device 7 as shown in fig. 4, and the cooling capacity supply device 7 communicates with the N target partition cooling devices 6. For example, the cold energy supply device 7 is a cold water storage tank, and the cold energy supply device 7 may supply cooling water to the N target partition cooling devices 6. The cooling medium stored in the cooling-amount supply device 7 may be a mixed liquid of water and water (for example, a mixed liquid of water and propylene glycol), ethylene glycol, propylene glycol, silicone oil, or the like, in addition to the cooling water.

With continued reference to fig. 4, each target zone cooling device 6 may have a first inlet 62 and a first outlet 63 formed therein. The target partition cooling device 6 is internally provided with a first cooling medium accommodating cavity 61, and the first cooling medium accommodating cavity 61 is communicated with a first inlet 62 and a first outlet 63. The first inlets 62 of the N target partition cooling devices 6 may be respectively communicated with the cold energy supply devices 7. Thus, the cooling capacity supply device 7 can simultaneously supply the cooling medium to the N target zone cooling devices 6 to cool the target 300.

Also, the magnetron sputtering apparatus 100 may further include a cooling medium recovery device 16 as shown in fig. 4, the cooling medium recovery device 16 communicating with the first outlets 63 of the N target partition cooling devices 6. Thus, the cooling medium recovery device 16 can recover the cooling medium flowing out of the N target partition cooling devices 6, and is more energy-saving.

It will be appreciated that the greater the number of the target zone cooling devices 6 in the magnetron sputtering apparatus 100, the finer the cooling zone division of the target 300 and the more accurate the temperature distribution adjustment of the target 300 can be achieved, but the higher the cost. Therefore, the number of target partition cooling devices 6 can be selected appropriately according to the actual design requirements.

The magnetron sputtering apparatus 100 shown in fig. 5 is described below by taking two target partition cooling devices 6 as an example. Referring to fig. 5, the two target partition cooling apparatuses 6 are a circular target cooling apparatus 601a and an annular target cooling apparatus 602a, respectively. Wherein the circular target cooling device 601a corresponds to a central area of the target 300 on the target carrying device 3. The annular target cooling device 602a is sleeved outside the circular target cooling device 601a and corresponds to the middle area and the edge area of the target 300 on the target bearing device 3. For the scheme that the target 300 is circular, the circular target cooling device 601a and the annular target cooling device 602a can cover the whole circular target 300, and heat dissipation of the circular target 300 is uniform.

Of course, if the target 300 has a rectangular thin plate structure, and two target zone cooling devices 6 are taken as an example, the two target zone cooling devices 6 may be respectively a rectangular target cooling device 601b and a rectangular annular target cooling device 602b as shown in fig. 6. The rectangular annular target cooling device 602b is sleeved outside the rectangular target cooling device 601 b.

It should be noted that, if the magnetron sputtering apparatus 100 includes more than two target zone cooling devices 6, and four target zone cooling devices 6 are taken as an example, the four target zone cooling devices 6 include one circular target cooling device 601a and three annular target cooling devices 602a as shown in fig. 7, and the three annular target cooling devices 602a may be sequentially sleeved outside the circular target cooling device 601a from inside to outside. Alternatively, the four target partition cooling devices 6 may be rectangular target partition cooling devices 601c as shown in fig. 8, where the four rectangular target partition cooling devices 601c are arranged in a rectangular array, so as to cover the entire target 300.

The above embodiment is described with the magnetron sputtering apparatus 100 including only N target partition cooling devices 6. However, during sputtering, there may be a case where the temperature of the target 300 is excessively high at an instantaneous temperature. Therefore, in some embodiments of the present application, the magnetron sputtering apparatus 100 further includes an auxiliary cooling device 8 as shown in fig. 9, and the auxiliary cooling device 8 is installed in the cabinet 1. The auxiliary cooling device 8 may be a water cooler. And, the auxiliary cooling device 8 is located at a side of the N target division cooling devices 6 away from the target 300. The auxiliary cooling device 8 may cover N target zone cooling devices 6. The auxiliary cooling device 8 may transfer cooling energy to the entire target 300 through the N target zone cooling devices 6. When the temperature of the whole target 300 is instantaneously higher, the cooling speed of the target 300 can be accelerated by simultaneously starting the N target partition cooling devices 6 and the auxiliary cooling device 8 to cool the whole target 300.

For the above cooling structure design of the target 300 in the magnetron sputtering apparatus 100, during the sputtering process, the thermal field distribution situation of the target 300 may be complex, and if the temperature distribution of the target 300 is controlled only by turning on or off the target partition cooling device 6 and the auxiliary cooling device 8, the instantaneous temperature change of the local area of the target 300 is too large, which may seriously affect the sputtering speed of the target 300 and affect the sputtering quality of the thin film layer.

Therefore, referring to fig. 10, the magnetron sputtering apparatus 100 according to the embodiment of the application further includes M target temperature detecting devices 9, a first flow rate controlling device 10, and a target temperature controlling device 15, where M is equal to or greater than 2.M target temperature detection devices 9 may be mounted on N target zone cooling devices 6, respectively. The target temperature detecting device 9 may be a thermocouple, an optical coupling pyrometer, a thermal probe, or the like. In order to detect the temperatures of the N target partition cooling devices 6, the total number M of target temperature detecting devices 9 may satisfy: m is more than or equal to N. I.e. each target zone cooling device 6 is correspondingly provided with one or more target temperature detection devices 9. For example, as shown in fig. 11, 1 target temperature detection device 9 is mounted on the circular target cooling device 601a, 4 target temperature detection devices 9 are mounted on the annular target cooling device 602a, and the 4 target temperature detection devices 9 are uniformly distributed along the circumferential direction of the annular target cooling device 602 a.

The first flow control device 10 may be a liquid flow controller (liquid flow controller, LFC). The plurality of first flow control devices 10 may be installed on connection pipes between the cold energy supply device 7 and inlets of the N target zone cooling devices 6, respectively. To ensure that the cooling capacity of each target zone cooling device 6 can be adjusted, the total number S of first flow control devices 10 satisfies: s is more than or equal to N. One or more liquid flow controllers are arranged between each target partition cooling device 6 and the cold energy supply device. In order to save the cost, a liquid flow controller is arranged between each target partition cooling device 6 and the cold energy supply device 7.

The target temperature control device 15 may be connected to both the S first flow rate control devices 10 and the M target temperature detection devices 9. According to the temperature values detected by the M target temperature detecting devices 9, the target temperature controlling device 15 may control the S first flow controlling devices 10 to adjust the flow rate of the cooling medium of the corresponding target zone cooling device 6. The target partition cooling device 6 is the target partition cooling device 6 that is in communication with the first flow control device 10. Therefore, the magnetron sputtering device 100 can control the cooling speed of the target 300 by the plurality of target partition cooling devices 6, can finely adjust the temperature of a plurality of areas on the target 300, and avoids the sputtering speed of the target 300 and the sputtering quality problem of a thin film layer, which are affected by the temperature mutation of local areas on the target 300 caused by repeatedly opening and closing the plurality of target partition cooling devices 6. Of course, the first flow control device 10 may be a flow control valve.

The above embodiment realizes the thermal field distribution adjustment of the target 300, and in order to further ensure that the thin film layer on the substrate 200 can meet the requirements of advanced processes, the thermal field of the substrate 200 can also be adjusted.

Based on this, in some embodiments of the present application, as shown in fig. 12, the number of the zone heating devices 4 in the magnetron sputtering apparatus 100 is plural. A plurality of zone heating devices 4 are respectively mounted on the side of the substrate carrier 2 remote from the target carrier 3 and are respectively used for heating a plurality of positions of the substrate 200. The zone heating means 4 is, for example, any one of a radiant heater, a conductive heat source, a resistive heater, an inductive heater, or a microwave heater. The plurality of zone heating devices 4 may perform temperature elevation control on a plurality of locations on the substrate 200 to adjust the thermal field distribution of the substrate 200.

In addition, in order to control the temperature of the substrate 200 not to be too high, the magnetron sputtering apparatus 100 is further provided with a substrate cooling device, and the substrate 200 can be cooled to a proper temperature in time and quickly by the substrate cooling device, so as to further adjust the thermal field distribution of the substrate 200.

Similarly, similar to the above-described cooling of the plurality of regions on the target 300 by the N target zone cooling devices 6, the plurality of regions on the substrate 200 may also be cooled by the plurality of substrate zone cooling devices 11, respectively. Thus, in some embodiments of the present application, as shown in FIG. 13, magnetron sputtering apparatus 100 includes P substrate zone cooling devices 11, P.gtoreq.2. The substrate cooling partition means 11 may be a water cooler. The P substrate zone cooling devices 11 may be installed below the plurality of zone heating devices 4, respectively, and disposed corresponding to the plurality of zone heating devices 4, respectively.

Therefore, the embodiment of the application can directly cool the plurality of partition heating devices 4 through the P substrate partition cooling devices 11 respectively, thereby indirectly cooling the substrate 200, enabling the temperature of a plurality of positions on the substrate 200 to be more in line with the process temperature requirement required by film formation, thereby improving the thickness of the film formed by sputtering and the uniformity of film resistance, being capable of matching the requirement of advanced process development on the performance parameters such as critical dimension, aspect ratio, hole filling capability, step coverage rate and the like, and improving the problem of asymmetry (asymmetry) existing in the magnetron sputtering process. In addition, the magnetron sputtering device 100 of the embodiment of the application can perform real-time temperature adjustment on the whole substrate 200 through the plurality of zone heating devices 4 and the P substrate zone cooling devices 11 in the sputtering process, the temperature adjustment of the substrate 200 is more accurate, and the response speed of the temperature adjustment is also faster.

The cooling capacity of the P substrate-zone cooling devices 11 may be supplied by the cooling capacity supply device 7, that is, the inlets of the P substrate-zone cooling devices 11 may be connected to the cooling capacity supply device 7, as shown in fig. 14. Of course, the above-described P substrate partition cooling apparatuses 11 may also use a dedicated substrate cooling supply apparatus to supply cooling. I.e. the P substrate zone cooling devices 11 are in communication with the substrate cooling supply.

Similarly, the cooling medium recovery of the P substrate-zone cooling devices 11 may employ the cooling medium recovery device 16, that is, the outlets of the P substrate-zone cooling devices 11 may be in communication with the cooling medium recovery device 16, as shown in fig. 14. Of course, the above-described P substrate partition cooling apparatus 11 may also employ a dedicated substrate cooling medium recovery apparatus to recover the cooling medium. I.e. the P substrate partition cooling means 11 are in communication with the substrate cooling medium recovery means.

Taking the example that the P substrate partition cooling devices 11 are all communicated with the cooling capacity supply device 7, with continued reference to fig. 14, a second cooling medium accommodating cavity 111 may be disposed in each substrate partition cooling device 11, and a second inlet 112 and a second outlet 113 that are all communicated with the second cooling medium accommodating cavity 111 are formed on the substrate partition cooling device 11. The second inlets 112 of the P substrate zone cooling devices 11 may be in communication with the cold supply device 7. The second outlets 113 of the P substrate zone cooling devices 11 may be in communication with a cooling medium recovery device 16.

Similarly, the greater the number of substrate zone cooling devices 11 in the magnetron sputtering apparatus 100, the finer the temperature zone control of the substrate 200 can be, but the higher the cost. Therefore, the number of the substrate zone cooling devices 11 may be appropriately selected according to the actual design needs.

Similarly, the magnetron sputtering apparatus 100 shown in fig. 15 will be described below by taking only two substrate partition cooling devices 11 as an example. Referring to fig. 15, the two substrate zone cooling apparatuses 11 are a circular substrate cooling apparatus 1101a and an annular substrate cooling apparatus 1102a, respectively. Wherein the circular substrate cooling device 1101a corresponds to the central area of the plurality of zone heating devices 4, and the annular substrate cooling device 1102a is sleeved outside the circular substrate cooling device 1101 a. For the case where the substrate 200 is circular, the circular substrate cooling device 1101a and the annular substrate cooling device 1102a may cover the entire circular substrate 200, and heat dissipation from the circular substrate 200 is relatively uniform.

Of course, if the substrate 200 is a rectangular thin plate structure, and two substrate zone cooling devices 11 are taken as an example, the two substrate zone cooling devices 11 may be a rectangular substrate cooling device 1101b and a rectangular annular substrate cooling device 1102b as shown in fig. 16, respectively. The rectangular annular substrate cooling device 1102b may be sleeved outside the rectangular substrate cooling device 1101 b.

It should be noted that, if the magnetron sputtering apparatus 100 includes more than two substrate partition cooling devices 11, for example, four substrate partition cooling devices 11, for the solution that the substrate 200 is circular, the four substrate partition cooling devices 11 include one circular substrate cooling device 1101a and more than three annular substrate cooling devices 1102a as shown in fig. 17, and the three annular substrate cooling devices 1102a may be sequentially sleeved outside the circular substrate cooling device 1101a from inside to outside. For a rectangular version of the substrate 200, the four substrate zone cooling devices 6 may also be four rectangular substrate zone cooling devices 1101c as shown in FIG. 18. The four rectangular substrate-partitioned cooling units 1101c are arranged in a rectangular array so as to cover the entire substrate 200.

The above description is given of the structure of the substrate 200 for directly performing the temperature raising and lowering control, and the following description is given of the structure of the substrate 200 for controlling the temperature.

In some embodiments of the present application, referring to fig. 19, the magnetron sputtering apparatus 100 further includes a plurality of substrate temperature detecting devices 12 and a substrate temperature controlling device 13.

Wherein, a plurality of substrate temperature detecting devices 12 are respectively installed on the substrate carrying device 2 and respectively correspond to the plurality of zone heating devices 4. The plurality of substrate temperature detecting means 12 are respectively for detecting the temperatures of the plurality of zone heating means 4. For example, as shown in fig. 20, 1 substrate temperature detection device 12 is mounted on the circular substrate cooling device 1101a, and 4 substrate temperature detection devices 12 are mounted on the annular substrate cooling device 1102 a. The substrate temperature sensing device 12 may be a thermocouple, an optically coupled pyrometer, a thermal probe, or the like. These devices can directly measure the temperature of the area where the zone heating device 4 is located, and are suitable for being installed at a position where thermal displacement is small, such as an area corresponding to the zone heating device 4 located at the center on the substrate 200. The substrate temperature detecting device 12 may also be a resistance measuring device (such as a high-frequency hall effect current sensor), and the temperature of the area where the zone heating device 4 is located is indirectly obtained through the corresponding relationship between the resistance value and the temperature of the zone heating device 4. The device may be adapted to be mounted at a location of a larger thermal displacement, such as a region of the substrate 200 corresponding to the zone heating device 4 located at an edge location.

The substrate temperature control device 13 may be a separate controller or a control module with a master controller in the magnetron sputtering apparatus 100. The substrate temperature control device 13 may be connected to the plurality of zone heating devices 4 and the plurality of substrate temperature detection devices 12. The substrate temperature control device 13 can adjust the heating power of the plurality of zone heating devices 4, respectively, based on the detected values of the plurality of substrate temperature detection devices 12. Therefore, the temperature of the substrate 200 is accurately controlled, the crystal phase structure of the thin film layer is stable, and the uniformity of the thin film resistance is good.

For the cooling capacity adjustment of the substrate zone cooling device 6, in some embodiments of the present application, referring back to fig. 19, the magnetron sputtering apparatus 100 further includes a plurality of second flow control devices 14, where the second flow control devices 14 may be liquid flow controllers (liquid flow controller, LFCs) or flow control valves. A plurality of second flow control devices 14 are installed on the connection pipes between the cold energy supply devices and the inlets of the P substrate zone cooling devices 11. To ensure that the cooling capacity of each substrate zone cooling device 11 can be adjusted, the total number R of second flow control devices 14 satisfies: r is more than or equal to P. One or more liquid flow controllers are installed between each substrate zone cooling device 6 and the cold energy supply device.

The substrate temperature control device 13 is connected to a plurality of second flow control devices 14. The substrate temperature control means 13 can control the plurality of second flow control means 14 to adjust the flow rate of the cooling medium into the corresponding substrate zone cooling means 11 based on the temperature value detected by each substrate temperature detection means 12. Thus, the magnetron sputtering apparatus 100 can control the cooling rates of the partition heating devices 4 and the substrate 200 by the plurality of substrate partition cooling devices 11, can finely adjust the temperatures of the plurality of regions on the substrate 200, and avoid the influence on the crystal phase structure and thickness distribution of the thin film layer due to the abrupt temperature change of the local regions on the substrate 200 caused by repeatedly opening and closing the plurality of substrate partition cooling devices 11.

It will be appreciated that the magnetron sputtering apparatus 100 of the embodiment of the application may have components such as the vacuum pumping device, the process shielding kit (process kit shield) and the like in addition to the above-described structural components. Since the embodiments of the present application do not relate to improvements of these structures, they will not be described in detail herein.

Based on the above structure of the magnetron sputtering apparatus 100, an embodiment of the present application further includes a control method for the magnetron sputtering apparatus 100 described above, as shown in fig. 21, the control method including the steps of:

S101: acquiring current temperature values T of multiple areas of target _t 。

The first flow rate control device 10 detects the current temperature value T of the target 300 from the target temperature detection devices 9 _t 。

S102: according to the current temperature values T of a plurality of areas of the target material _t And regulating and controlling the flow of the cooling medium entering the corresponding target partition cooling device.

The target temperature control device 15 may, for example, perform the following operation according to the current temperature values T of the multiple regions of the target 300 obtained from the multiple target temperature detection devices 12 _t The plurality of first flow control devices 10 are controlled to adjust the flow rate of the cooling medium entering the corresponding target zone cooling device 6. The temperature adjusting effect of the control method on the target 300 can be the same as the temperature adjusting effect of the magnetron sputtering device on the target 300 in the above embodiment, and will not be repeated here.

Referring to fig. 22, S102 specifically includes:

when the current temperature value T of any region of the target material _t (j) Is greater than the corresponding first preset zone target temperature threshold T _t1 (j) And increasing the flow of the cooling medium entering the corresponding target partition cooling device.

Exemplary, the current temperature value T at any region of the target 300 _t (j) Is greater than the corresponding first preset zone target temperature threshold T _t1 (j) When the number of hot electrons excited on the target 300 is excessive, the sputtering speed is too high, the thickness of the thin film formed on the corresponding substrate 200 easily exceeds a preset value, and the thin film resistance is greater or less than a preset resistance. Therefore, it is necessary to increase the flow rate of the cooling medium into the corresponding target segment cooling device 6 and reduce the temperature of the region on the target 300.

When the current temperature value of any region of the target material detects the temperature value T _t (j) Is smaller than a corresponding second preset partition target temperature threshold T _t2 (j) And reducing the flow of the cooling medium entering the corresponding target partition cooling device.

Exemplary, the temperature value T detected at the current temperature value of any region of the target 300 _t (j) Is smaller than a corresponding second preset partition target temperature threshold T _t2 (j) When the number of hot electrons excited on the target 300 is too small, the sputtering speed is too slow, the thickness of the thin film formed on the corresponding substrate 200 is easily lower than the preset thickness, and the thin film resistance is smaller or larger than the preset resistance. Therefore, it is necessary to decrease the flow rate of the cooling medium into the respective zone cooling devices of the target 300 and increase the temperature of the zone on the target 300.

When the current temperature value of any region of the target material detects the temperature value T _t (j) At a corresponding first preset zone target temperature threshold T _t1 (j) And a second preset partition target temperature threshold T _t2 (j) And when the flow rate of the cooling medium entering the corresponding target partition cooling device is kept unchanged.

Illustratively, when any region of the target 300Temperature value T detected by the current temperature value of (2) _t (j) At a corresponding first preset zone target temperature threshold T _t1 (j) And a second preset partition target temperature threshold T _t2 (j) In the process, the number of hot electrons excited on the target 300 is moderate, the sputtering speed is ideal, the thickness of the film formed on the corresponding substrate 200 can reach a preset value, and the difference between the film resistance and the preset film resistance is smaller or zero. Therefore, the target temperature control device 15 may control the corresponding first flow rate control device 10 to maintain the flow rate of the cooling medium entering the corresponding target zone cooling device 9.

It should be noted that, the preset target temperature thresholds of the different regions on the target 300 are different, and may be specifically set according to the circuit design requirement on the actual substrate 200. And, the preset target temperature threshold may be obtained according to experience or experimental value.

The specific method of controlling the temperature distribution of the target 300 is described above, and the temperature distribution of the substrate 200 may be performed using the following control method. In some embodiments of the present application, as shown in fig. 23, the control method of the magnetron sputtering apparatus 100 further includes the steps of:

S201: acquiring current temperature values T of multiple areas of a substrate _w 。

For example, the substrate temperature control device 13 may obtain the current temperature values T of the plurality of regions of the substrate 200 from the plurality of substrate temperature detection devices 12 _w 。

S202: according to the current temperature values T of a plurality of areas of the substrate _w The heating power of the corresponding zone heating device and the flow of the cooling medium into the substrate zone cooling device are adjusted.

For example, the substrate temperature control device 13 may adjust the heating power of the corresponding zone heating device 4 and control the corresponding second flow control device 14 to adjust the flow rate of the cooling medium into the substrate zone cooling device 11 according to the current temperature values of the plurality of areas of the substrate 200 obtained from the plurality of substrate temperature detection devices 12. The temperature adjustment effect of the control method on the substrate 200 can be the same as that of the magnetron sputtering apparatus 100 of the above embodiment on the substrate 200, and will not be described here again.

Referring to fig. 24, S202 specifically includes:

when the current temperature value T of i areas of the substrate _w Is greater than a corresponding third preset zone target temperature threshold T _w3 (i) And when the heating power of the corresponding partition heating device is kept unchanged, the flow of the cooling medium entering the corresponding substrate partition cooling device is increased. Wherein i satisfies: p is more than or equal to i and more than or equal to 1, and P is the total number of substrate temperature detection devices in the magnetron sputtering equipment.

Illustratively, the current temperature value T of i zones on the substrate 200 _w Is greater than a corresponding third preset zone target temperature threshold T _w3 (i) When the film grains formed by sputtering in the local area on the substrate 200 are too small, the step coverage exceeds the set step coverage, and the film resistance is larger or smaller. Therefore, the substrate temperature control device 13 is required to control the heating power of the corresponding zone heating device 4 to be constant, and the second flow control device 14 is required to control the flow rate of the cooling medium entering the corresponding substrate zone cooling device 11 to be increased, thereby lowering the temperature of the local area of the substrate 200.

When the current temperature value T of P areas of the substrate _w Is greater than a corresponding third preset zone target temperature threshold T _w3 (i) In this case, the heating power of the plurality of zone heating devices is reduced, and the flow rate of the cooling medium entering the corresponding substrate zone cooling device is increased.

Exemplary, the current temperature values T for P regions on the substrate 200 _w Is greater than a corresponding third preset zone target temperature threshold T _w3 (i) When the film grains formed on the whole substrate 200 by sputtering are too small, the step coverage exceeds the set step coverage, and the film resistance is larger or smaller. Therefore, the substrate temperature control device 13 is required to reduce the heating power of the plurality of zone heating devices 4 while controlling the plurality of second flow control devices 14 to increase the flow rate of the cooling medium into the plurality of substrate zone cooling devices 11. Thus, the temperature of the entire substrate 200 is rapidly increased, So as to ensure the sputtering effect of the film layer.

When the current temperature value T of i areas of the substrate _w Is smaller than a corresponding fourth preset partition target temperature threshold T _w4 (i) And increasing the heating power of the corresponding partition heating device, and keeping the flow of the cooling medium entering the corresponding substrate partition cooling device unchanged.

The current temperature value T of i regions on the substrate 200 is illustrated by _w Is smaller than a corresponding fourth preset partition target temperature threshold T _w4 (i) When the film grains formed by sputtering in the local area on the substrate 200 are too large, the step coverage rate is lower than the set step coverage rate, and the film resistance is larger. Therefore, the substrate temperature control device 13 is required to increase the heating power of the corresponding zone heating device 4, and the second flow control device 14 is required to control the flow rate of the cooling medium entering the corresponding substrate zone cooling device 11, thereby increasing the temperature of the local area of the substrate 200.

When the current temperature value T of P areas of the substrate _w Is smaller than a corresponding fourth preset partition target temperature threshold T _w4 (i) And when the heating power of the plurality of zone heating devices is increased, the flow rate of the cooling medium entering the corresponding substrate zone cooling device is reduced.

For example, when the current temperature value of the P substrates 200 is less than the corresponding fourth preset zone target temperature threshold T _w4 (i) And when the film crystal grains formed on the whole substrate 200 by sputtering are larger, the step coverage rate is lower than the set step coverage rate, and the film resistance is larger. Therefore, it is necessary that the substrate temperature control device 13 increases the heating power of the plurality of zone heating devices 4 while controlling the plurality of second flow control devices 14 to reduce the flow of the cooling medium into the plurality of substrate zone cooling devices 11. Thus, the temperature of the entire substrate 200 is rapidly reduced to secure the sputtering effect of the thin film layer.

When the current temperature value T of any area of the substrate _w At a corresponding third preset zone target temperature threshold T _w3 (i) And a fourth preset zone target temperature threshold T _w4 (i) Time of the timeThe heating power of the corresponding zone heating device is kept unchanged, and the flow of the cooling medium into the corresponding substrate zone cooling device is kept unchanged.

Illustratively, the current temperature value T at any region of the substrate 200 _w At a corresponding third preset zone target temperature threshold T _w3 (i) And a fourth preset zone target temperature threshold T _w4 (i) And when the difference between the step coverage and the set step coverage is smaller or zero, the difference between the film resistance and the preset film resistance is smaller or zero. Therefore, the substrate temperature control device 13 may be configured to maintain the heating power of the corresponding zone heating device 4 constant, and to control the corresponding second flow control device 14 to maintain the flow rate of the cooling medium entering the corresponding substrate zone cooling device 11 constant.

Line 1 in FIG. 25 represents a change in a topographical parameter of the substrate 200, such as film grain, step coverage, film thickness, or film resistance. Line 2 in fig. 25 represents the temperature change of the substrate 200. The abscissa X in fig. 27 may represent the locations of various regions on the substrate 200, and the ordinate Y represents the parameter values and temperature values. For example, referring to fig. 25, curve 1 represents the sheet resistance, and when the ordinate value of a certain point on curve 1 is higher than the preset resistance value, it indicates that the sheet resistance is large in this region. The temperature value corresponding to this point on curve 2 is higher to compensate for the thin film layer on the substrate 200. Alternatively, curve 1 represents the film thickness, and when the ordinate value at a point on curve 1 is higher than the preset film thickness, it indicates that the film thickness in this region is larger. The temperature value on curve 2 corresponding to this point is low, so that compensation can be made for the thin film layer on the substrate 200. Or, curve 1 represents the film step coverage, and the ordinate value of a certain point on curve 1 is lower than the preset film step coverage, which indicates that the film step coverage of the area is smaller. The temperature value on curve 2 corresponding to this point is high, so that compensation can be made for the thin film layer on the substrate 200.

The control method of the magnetron sputtering apparatus 100 according to the embodiment of the application can implement the corresponding compensation of the topography parameters of the substrate 200 by temperature adjustment as shown in fig. 25 by executing the above control steps.

The foregoing is merely illustrative of the present application, and the present application is not limited thereto, and any person skilled in the art will readily recognize that variations or substitutions are within the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims

A magnetron sputtering apparatus, characterized by comprising:

a sputtering cavity is arranged in the shell;

a substrate carrying device mounted within the sputtering chamber and configured to secure a substrate;

the target bearing device is arranged on the shell and used for fixing a target; the target on the target carrying device is opposite to the substrate on the substrate carrying device;

and the at least two target partition cooling devices are arranged on one side of the target on the target bearing device, which is far away from the substrate bearing device, and correspond to a plurality of positions of the target on the target bearing device respectively.
The magnetron sputtering apparatus of claim 1 wherein the at least two target zone cooling devices comprise:

the round target cooling device corresponds to the central area of the target on the target bearing device;

and the annular target cooling device is sleeved on the outer side of the round target cooling device and corresponds to the middle area or the edge area of the target on the target bearing device.
The magnetron sputtering apparatus according to claim 1 or 2, characterized in that the magnetron sputtering apparatus further comprises:

the auxiliary cooling device is arranged in the shell and is positioned on one side, away from the target, of the at least two target partition cooling devices.
A magnetron sputtering apparatus as claimed in any one of claims 1 to 3, further comprising:

the cold energy supply device is communicated with the at least two target partition cooling devices;

the plurality of first flow control devices are respectively arranged on connecting pipelines between the cold energy supply device and inlets of the at least two target partition cooling devices;

The target temperature detection devices are respectively arranged on at least two target partition cooling devices;

the target temperature control device is connected with the first flow control device and the target temperature detection device, and is used for controlling the first flow control devices to adjust the flow of the cooling medium entering the corresponding target partition cooling device according to the temperature values detected by the target temperature detection devices.
The magnetron sputtering apparatus of any of claims 1 to 4 further comprising:

the plurality of partition heating devices are respectively arranged on one side of the substrate bearing device, which is close to the target bearing device, and are respectively used for heating a plurality of positions of the substrate;

the substrate temperature detection devices are respectively arranged on the substrate bearing device and are respectively and correspondingly arranged with the partition heating devices;

and the substrate temperature control device is connected with the plurality of partition heating devices and the plurality of substrate temperature detection devices and is used for respectively adjusting the heating power of the plurality of partition heating devices according to the detection values of the plurality of substrate temperature detection devices.
The magnetron sputtering apparatus of claim 5 wherein the magnetron sputtering apparatus further comprises:

and the at least two substrate partition cooling devices are arranged below the partition heating devices and are respectively arranged corresponding to the partition heating devices.
The magnetron sputtering apparatus of claim 6 wherein the at least two substrate zone cooling means comprises:

a circular substrate cooling device corresponding to a central region of the plurality of zone heating devices;

and the annular substrate cooling device is sleeved outside the circular substrate cooling device and corresponds to the middle area or the edge area of the plurality of zone heating devices.
The magnetron sputtering apparatus according to claim 6 or 7, characterized in that the magnetron sputtering apparatus further comprises:

a cold energy supply device which is communicated with the at least two substrate partition cooling devices;

a plurality of second flow control devices mounted on the connecting pipe between the cold supply device and the inlets of the at least two substrate zone cooling devices;

The substrate temperature control device is connected with the plurality of second flow control devices and the substrate temperature detection devices, and is used for controlling the second flow control devices to adjust the flow of the cooling medium entering the corresponding substrate partition cooling devices according to the temperatures detected by the plurality of substrate temperature detection devices.
A control method for a magnetron sputtering apparatus as claimed in any one of the preceding claims 1 to 8, characterized by comprising the steps of:

acquiring current temperature values of a plurality of areas of the target;

and regulating and controlling the flow of the cooling medium entering the corresponding target partition cooling device according to the current temperature values of the multiple areas of the target.
The method according to claim 9, wherein adjusting the flow rate of the cooling medium entering the corresponding target partition cooling device according to the current temperature values of the plurality of regions of the target specifically comprises:

when the current temperature value of any region of the target is larger than the corresponding first preset partition target temperature threshold value, increasing the flow of cooling medium entering the corresponding target partition cooling device;

when the temperature value detected by the current temperature value of any region of the target is smaller than the corresponding second preset partition target temperature threshold value, reducing the flow of cooling medium entering the corresponding target partition cooling device;

When the temperature value detected by the current temperature value of any region of the target is between the corresponding first preset partition target temperature threshold value and the corresponding second preset partition target temperature threshold value, the flow of the cooling medium entering the corresponding target partition cooling device is kept unchanged.
The control method of a magnetron sputtering apparatus according to claim 9, further comprising at least two substrate partition cooling devices installed below the plurality of partition heating devices and disposed in correspondence with the plurality of partition heating devices, respectively; at least two substrate partition cooling devices are respectively communicated with the cold energy supply device; the control method of the magnetron sputtering equipment further comprises the following steps:

acquiring current temperature values of a plurality of areas of the substrate;

and adjusting the heating power of the corresponding zone heating device and the flow of the cooling medium entering the substrate zone cooling device according to the current temperature values of the plurality of areas of the substrate.
The method according to claim 11, wherein adjusting the heating power entering the corresponding zone heating device and the flow rate of the cooling medium in the substrate zone cooling device according to the current temperature values of the plurality of regions of the substrate specifically comprises:

When the current temperature value of the i areas of the substrate is larger than the corresponding third preset partition target temperature threshold value, keeping the heating power of the corresponding partition heating device unchanged, and increasing the flow of cooling medium entering the corresponding substrate partition cooling device; wherein i satisfies: p is more than or equal to i and more than or equal to 1, wherein P is the total number of substrate temperature detection devices in the magnetron sputtering equipment;

when the current temperature value of the P areas of the substrate is larger than the corresponding third preset partition target temperature threshold value, reducing the heating power of the plurality of partition heating devices, and increasing the flow of cooling medium entering the plurality of substrate partition cooling devices;

when the current temperature value of the i areas of the substrate is smaller than the corresponding fourth preset partition target temperature threshold value, increasing the heating power of the corresponding partition heating device, and keeping the flow of the cooling medium entering the corresponding substrate partition cooling device unchanged;

when the current temperature value of the P areas of the substrate is smaller than the corresponding fourth preset partition target temperature threshold value, heating power of the plurality of partition heating devices is increased, and flow of cooling medium entering the corresponding substrate partition cooling devices is reduced;

when the current temperature value of any area of the substrate is between the corresponding third preset partition target temperature threshold value and the fourth preset partition target temperature threshold value, the heating power of the corresponding partition heating device is kept unchanged, and the flow of the cooling medium entering the corresponding substrate partition cooling device is kept unchanged.