CN116685076A - Reflow and tooling return of electronic components - Google Patents
Reflow and tooling return of electronic components Download PDFInfo
- Publication number
- CN116685076A CN116685076A CN202310751139.9A CN202310751139A CN116685076A CN 116685076 A CN116685076 A CN 116685076A CN 202310751139 A CN202310751139 A CN 202310751139A CN 116685076 A CN116685076 A CN 116685076A
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- Prior art keywords
- electronic component
- reflow
- laser
- laser beam
- laser irradiation
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- 238000010438 heat treatment Methods 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 230000003287 optical effect Effects 0.000 claims description 35
- 239000011347 resin Substances 0.000 claims description 14
- 229920005989 resin Polymers 0.000 claims description 14
- 230000000903 blocking effect Effects 0.000 claims description 12
- 230000001678 irradiating effect Effects 0.000 claims description 12
- JBTWLSYIZRCDFO-UHFFFAOYSA-N ethyl methyl carbonate Chemical compound CCOC(=O)OC JBTWLSYIZRCDFO-UHFFFAOYSA-N 0.000 claims description 10
- 238000005476 soldering Methods 0.000 claims description 9
- 239000000853 adhesive Substances 0.000 claims description 6
- 230000001070 adhesive effect Effects 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 230000000694 effects Effects 0.000 claims description 4
- 239000013307 optical fiber Substances 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 4
- WNPMPFBJTYCQEL-UHFFFAOYSA-N carbonic acid;ethyl carbamate Chemical compound OC(O)=O.CCOC(N)=O WNPMPFBJTYCQEL-UHFFFAOYSA-N 0.000 claims 1
- 229910000679 solder Inorganic materials 0.000 description 37
- 238000000034 method Methods 0.000 description 20
- 238000002844 melting Methods 0.000 description 19
- 230000008018 melting Effects 0.000 description 19
- 239000004065 semiconductor Substances 0.000 description 19
- 238000012545 processing Methods 0.000 description 16
- 230000004323 axial length Effects 0.000 description 15
- 238000010586 diagram Methods 0.000 description 15
- 230000017525 heat dissipation Effects 0.000 description 9
- 239000011230 binding agent Substances 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 239000000155 melt Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004093 laser heating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3494—Heating methods for reflowing of solder
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/20—Bonding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/20—Bonding
- B23K26/21—Bonding by welding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/60—Preliminary treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/328—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by welding
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
- H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Automation & Control Theory (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Wire Bonding (AREA)
Abstract
The present application relates to a reflow and rework apparatus for electronic components. The application comprises the following steps: a stage for disposing a substrate on which an electronic component to be reflowed or reworked is mounted; a heating unit that heats an electric connection pattern provided on the electronic component by heating a region including the electronic component; a laser irradiation unit that irradiates the electronic component with laser light to heat an electrical connection pattern provided on the electronic component; a control instruction input section for receiving a job control instruction; and a control unit that controls the heating unit and the laser irradiation unit to operate so as to reflow the electronic component to the substrate or rework the electronic component reflowed to the substrate, based on the operation control command received through the control command input unit.
Description
The present application is a divisional application of patent application with application number 201980000268.6, application date 2019, 2/7, and the name of "reflow and rework device of electronic component".
Technical Field
The present application relates to a reflow and rework apparatus for electronic components. More specifically, the present application relates to reflow and reflow processing of electronic components as follows: the method can stably reflow and rework only the target electronic component to the substrate without affecting other electronic components, reduce the time required for the electric connection pattern of the solder ball of the target electronic component to reach the melting point, reduce the whole reflow and rework process time, and improve the product yield.
And, it relates to the reflow and back processing of the following electronic components: in order to remove the electronic component mounted on the printed circuit board, only the electronic component area to be removed is irradiated with a laser beam so that heat is not transferred to the adjacent electronic component, so that only the electronic component to be removed can be removed.
Background
In general, an electronic component including an integrated circuit chip (IC), a manual component, and the like is reflowed to a printed circuit board by a reflow (reflow) process, and when a defect in the reflowed electronic component is found, the electronic component can be replaced with a normal electronic component after the defective component is removed by a rework (rework) process. Of course, for reflow and rework, pads are provided on the printed circuit board, and solder balls corresponding to the pads are provided on the electronic component.
On the other hand, as shown in fig. 1, a method of supplying hot air to heat solder balls provided on electronic components to a melting point has been conventionally used for a reflow process and a rework process.
However, this prior art has the following problems.
First, the hot air supplied during the reworking or reflow process with respect to a specific electronic component is inevitably supplied to other electronic components adjacent to the specific component, and thus has a bad influence on other electronic components that are not the object of the reworking or reflow process.
A specific description thereof is as follows.
As shown in fig. 1, according to the conventional art, when the reworking target is the electronic component a, hot air for melting solder balls provided to the electronic component a is supplied not only to the electronic component a but also to the electronic component B, C adjacent to the electronic component a, and therefore, a plurality of solder balls normally provided to the electronic component B, C are melted and the like to adversely affect the electronic component B, C unintentionally.
Second, in the conventional method such as the hot air method described above, radiant heat is applied from a heat source of a non-contact method to all surfaces of the electronic component to be heated, and the temperature of the electronic component mounting and soldering portion gradually increases by the radiant heat, so that the time from the heating portion to the soldering melting is long. That is, since the time for supplying hot air is too long in order to make the solder balls reach the melting point, the overall process time increases, and the yield of the product decreases.
Third, recently, since a small-sized component is mounted on a substrate at a high density, for example, in the case of a small chip component (collectively referred to as 0201 size, that is, 0.2mm×0.1mm or 0402 size, that is, 0.4mm×0.2mm or the like), it is necessary to perform only local heating such as heating to the corresponding component range, and thus, a conventional system using a hot air or a heat source such as a halogen or xenon lamp cannot take out the target component.
On the other hand, in order to secure the characteristics of weight and reliability of electronic components such as a thick semiconductor chip having a thickness of 1000 μm or more, a thick lead electrode line (or lead) is often wired on the side surface of the electronic component without disposing a solder ball on the lower part of the semiconductor chip, and such components are usually electronic components that discharge much heat, and therefore, a thick lead electrode line having very excellent heat dissipation performance is used, and in order to improve heat dissipation performance, a printed circuit board is also formed with a wide and thick internal wiring, and a heat dissipation plate having a thickness of 1mm or more is attached on the lower part of the printed circuit board and used at the same time. Therefore, if the electronic components such as the semiconductor chip and the lead electrode wires are heated at the same time, most of the heat is easily dissipated due to the heat dissipation performance of the electronic components themselves, so that the contact portion is not easily melted, and if the temperature of the electronic components such as the semiconductor chip is excessively high in order to sufficiently melt the lead electrode wires and the base portion of the substrate, the heat absorbed by the flexible Printed Circuit Board (PCB) and the heat dissipation plate is even heated for an excessively long time, so that the peripheral electronic components that are unnecessarily removed and need to be prevented from being broken are broken.
Disclosure of Invention
Technical problem
The invention aims to provide reflow and reflow processing of the following electronic components: only the target electronic component is stably reflowed to the substrate without affecting other electronic components.
Further, an object of the present invention is to provide reflow and reflow processing of the following electronic components: the time required for the electric connection pattern of the solder ball of the target electronic component to reach the melting point is reduced to reduce the whole reflow and reworking process time, and the product yield can be improved.
The present invention also provides a reflow and reflow apparatus as follows: only the damaged electronic components among the electronic components mounted on the printed circuit substrate are irradiated with the infrared laser beam so that heat is not transferred to the adjacent normal electronic components, and only the damaged electronic components can be removed.
The present invention also provides a reflow and reflow apparatus as follows: in the case where electronic components of mutually different sizes are mounted on a printed circuit board, the laser beam irradiation area is changed by adjusting the distance between the laser beam irradiation section and the mounted component so that the mutually different sizes of electronic components are individually removed.
The present invention also provides a reflow and reflow apparatus as follows: in the case where electronic components of mutually different sizes are mounted on a printed circuit board, components of various sizes are removed by a laser beam having an area corresponding to the smallest-sized component.
The present invention also provides a reflow and reflow apparatus as follows: in the case of mounting an electronic component on a printed circuit board having a small transmission power of an infrared laser beam or excellent heat radiation characteristics due to a thick thickness of the electronic component, the infrared laser beam is mainly applied to lead electrode lines around the electronic component so that excessive thermal shock is not applied to the electronic component and the electronic component can be removed from the board.
The present invention also provides a reflow and reflow apparatus as follows: when a plurality of solder balls are formed on the lower surface of the electronic component mounted, for example, in a Ball Grid Array (BGA), the time required for separating the electronic component to be removed can be reduced by irradiating only the damaged electronic component among the electronic components mounted on the printed circuit board with an infrared laser beam.
The present invention also provides a reflow and reflow apparatus as follows: when the semiconductor chip is bonded to the printed circuit board together with the solder balls by the resin binder, the solder balls may be melted and the resin binder may be decomposed to remove the electronic components from the board.
Solution to the problem
The reflow and reflow processing device for electronic components of the present invention for achieving the above technical object includes; a stage for disposing a substrate on which an electronic component to be reflowed or reworked is mounted; a heating unit that heats an electric connection pattern provided on the electronic component by heating a region including the electronic component; a laser irradiation unit that irradiates the electronic component with laser light to heat an electrical connection pattern provided on the electronic component; a control instruction input section for receiving a job control instruction; and a control unit that controls the heating unit and the laser irradiation unit to operate so as to reflow the electronic component to the substrate or rework the electronic component reflowed to the substrate, based on the operation control command received through the control command input unit.
In the present invention, the electrical connection pattern of the electronic component is individually heated by the heat transferred from the heating unit and the laser irradiation unit, thereby reducing the heating time for reflow or rework, and preventing the surface of the electronic component, which is the laser irradiation surface, from being damaged during the heating for reflow or rework.
In the present invention, when the operation control command is in the sequential operation mode, the control unit controls the heating unit and the laser irradiation unit to sequentially operate.
In the present invention, when the operation control command is in the simultaneous operation mode, the control unit controls the heating unit and the laser irradiation unit to operate simultaneously.
In the present invention, when the operation control command is in the overlapping operation mode, the control unit controls the heating unit and the laser irradiation unit to overlap each other in at least a partial region.
In the present invention, the heating unit heats the region including the electronic component by an air convection heating system or an optical radiation heating system.
In the present invention, the heating unit may heat the region including the electronic component by supplying hot air to the region including the electronic component.
In the present invention, the heating unit irradiates light including one or more of ultraviolet rays and infrared rays to the region including the electronic component, and heats the region including the electronic component.
The present invention is characterized in that the light source supplied by the laser irradiation unit is a simultaneous irradiation surface light source which irradiates all the areas belonging to the laser irradiation area.
The present invention is characterized in that the light source supplied by the laser irradiation unit is a sequential irradiation surface light source sequentially irradiating a plurality of individual places belonging to the laser irradiation area.
In the present invention, the light source supplied from the laser irradiation unit is a point light source, and the point light source is scanned by a high-speed mirror to obtain a surface light source irradiation effect with reference to the laser irradiation area.
In the present invention, among the laser beams irradiated from the laser irradiation unit, an incident laser beam has an optical power partially transmitted through an electronic component to be removed, and the welding unit heats and melts the substrate and the electronic component, and the welding unit welds the substrate and the electronic component.
The present invention is characterized in that the laser irradiation section includes: a beam shaper for converting the infrared laser generated from the laser oscillator and transmitted through the optical fiber into a surface light source form; an optical lens module for irradiating the electronic component as a removal object with an infrared laser beam converted into a surface light source form by the beam shaper; a driving device for driving the optical lens module so that the area of the infrared laser beam corresponds to or is smaller than the surface area of the electronic component to be removed; and a control device for controlling the operation of the driving device.
The laser beam irradiated from the laser irradiation unit has a wavelength range in which the methyl ethyl carbonate (EMC) mold layer of the electronic component to be removed and the silicon chip can be transmitted at a comparable ratio.
The present invention is characterized in that the laser beam has one wavelength range of 800nm to 1200nm, 1400nm to 1600nm, 1800nm to 2200nm, and 2500nm to 3200nm, and the ethylmethyl carbonate mold layer of the electronic component has a thickness of 1000 μm or less.
The laser irradiation section controls the heating temperature of the soldering section to be in the range of 220 ℃ to 260 ℃, controls the surface temperature of the electronic component to be removed to be in the range of 300 ℃ to 350 ℃ or less, and controls the irradiation time of the laser beam to be in the range of 1 ms to 30 seconds.
In the present invention, when the substrate is a polymer material susceptible to high temperature, the laser irradiation section controls the substrate temperature to a range of 200 ℃ or less and controls the irradiation time of the laser beam to a range of 1 ms to 30 seconds.
The present invention is also characterized by further comprising a laser beam blocking cover provided between the laser beam irradiation unit and the electronic component to be removed, the laser beam blocking cover blocking the laser beam irradiated from the laser beam irradiation unit so that the laser beam irradiated from the laser beam irradiation unit does not transmit the electronic component to be removed, and the laser beam irradiation unit irradiates the laser beam having an irradiation area including a lead area of a side wiring of the electronic component to be removed.
The present invention is also characterized by further comprising an ultraviolet irradiation section for irradiating ultraviolet rays at various angles and directions for decomposing a resin adhesive attached to a bonding portion between the electronic component to be removed and the substrate.
The present invention is also characterized in that the ultraviolet irradiation section is an ultraviolet laser oscillator that generates an ultraviolet laser beam or a high-output ultraviolet Light Emitting Diode (LED) module that generates a high-output ultraviolet beam.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the present invention, there is provided reflow and reflow processing of an electronic component as follows: only the target electronic component is stably reflowed to the substrate without affecting other electronic components.
Further, according to the present invention, there is provided reflow and reflow processing of an electronic component as follows: the time required for bringing the electrical connection pattern of the solder ball of the target electronic component to the melting point is reduced to reduce the overall reflow and rework process time and to improve the product yield.
Further, according to the present invention, there is provided reflow and reflow processing of an electronic component as follows: in the process of making the electric connection pattern of the solder ball of the target electronic component reach the melting point, the heating part heats the whole electronic component and the whole substrate to a specific temperature lower than the melting point, then the temperature of the upper surface of the electronic component required for heating the welding part to be higher than the melting point in order to be overlapped (partially overlapped in time domain) or simultaneously or in the time domain is maintained at a low temperature, and the damage of the electronic component can be completely removed in the process of executing reflow and reworking.
Further, according to the present invention, there is provided reflow and reflow processing of an electronic component as follows: in the process of making the electric connection pattern of the solder ball of the target electronic component reach the melting point, even if the absorptivity of the laser light of the electronic component is too low or too high, the laser light can be made to reach the solder ball effectively, and the additional temperature rise amplitude of the laser light can be adjusted, so that the reflow and rework can be performed for the electronic component having absorptivity of various laser light.
Further, according to the present invention, there is provided a reflow and reflow processing apparatus as follows: only the damaged electronic components among the electronic components mounted on the printed circuit substrate are irradiated with the infrared laser beam so that heat is not transferred to the adjacent normal electronic components, and only the damaged electronic components can be removed.
Further, according to the present invention, there is provided a reflow and reflow processing apparatus as follows: in the case where electronic components of mutually different sizes are mounted on a printed circuit board, the laser beam irradiation area is changed by adjusting the distance between the laser beam irradiation section and the mounted component so that the mutually different sizes of electronic components are individually removed.
Further, according to the present invention, there is provided a reflow and reflow processing apparatus as follows: in the case where electronic components of mutually different sizes are mounted on a printed circuit board, components of various sizes are removed by a laser beam having an area corresponding to the smallest-sized component.
Further, according to the present invention, there is provided a reflow and reflow processing apparatus as follows: in the case of mounting an electronic component on a printed circuit board having a small transmission power of an infrared laser beam or excellent heat dissipation performance due to a thick thickness of the electronic component, the infrared laser beam is also applied mainly to lead electrode lines around the electronic component, so that excessive thermal shock is not applied to the electronic component, and the electronic component can be removed from the board.
Further, according to the present invention, there is provided a reflow and reflow processing apparatus as follows: when a plurality of solder balls are formed on the lower surface of the electronic component mounted, for example, in a Ball Grid Array (BGA), the time required for separating the electronic component to be removed can be reduced by irradiating only the damaged electronic component among the electronic components mounted on the printed circuit board with an infrared laser beam.
Further, according to the present invention, there is provided a reflow and reflow processing apparatus as follows: when the semiconductor chip is bonded to the printed circuit board together with the solder balls by the resin binder, the solder balls may be melted and the resin binder may be decomposed to remove the electronic components from the board.
Drawings
Fig. 1 is a diagram for explaining a conventional reflow and rework method using hot air.
Fig. 2 is a functional block diagram of an apparatus for reflow and rework of electronic components according to an embodiment of the present invention.
Fig. 3 is an exemplary block diagram of an apparatus for reflow and rework of electronic components in accordance with an embodiment of the present invention.
Fig. 4 is a structural diagram of a laser irradiation section of the reflow and rework apparatus of the electronic component according to the embodiment of the present invention.
Fig. 5 is a schematic operation diagram of a laser irradiation section used in the reflow and rework apparatus of an electronic component according to an embodiment of the present invention.
Fig. 6 is a block diagram of an optical lens module of a laser irradiation section used in a reflow and rework apparatus of an electronic component according to an embodiment of the present invention.
Fig. 7 is a graph showing a surface temperature of a semiconductor chip absorbing an infrared laser beam irradiated in a laser irradiation section of an electronic component reflow and rework apparatus according to an embodiment of the present invention.
Fig. 8 is a schematic working diagram of a reflow and rework apparatus for electronic components according to another embodiment of the present invention.
Fig. 9 is a schematic diagram illustrating an operation of a reflow and rework apparatus of an electronic device according to another embodiment of the present invention.
Detailed Description
For the embodiments according to the inventive concept disclosed in the present specification, specific structural or functional descriptions are merely for the purpose of illustrating the embodiments according to the inventive concept, and the embodiments according to the inventive concept can be implemented in various forms, and the embodiments described in the present specification are not limited thereto.
The embodiments according to the concept of the present invention can be variously modified and can have various forms, and thus, the embodiments are illustrated in the drawings and described in detail in the present specification. However, the embodiments according to the concept of the present invention are not limited to the specific disclosed forms, but include all modifications, equivalents, or alternatives included in the spirit and technical scope of the present invention.
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
Fig. 2 is a functional block diagram of an apparatus for reflow and rework of an electronic component according to an embodiment of the present invention, and fig. 3 is a diagram showing an exemplary structure of the apparatus for reflow and rework of an electronic component according to an embodiment of the present invention.
Referring to fig. 2 and 3, the reflow and reflow apparatus of the electronic component according to the embodiment of the present invention includes a stage 10, a heating section 20, a laser irradiation section 30, a control command input section 40, and a control section 50.
The stage 10 is a component for disposing the substrate 3, and the electronic component 1 to be reflowed or reworked is mounted on the substrate 3. For example, the substrate 3 may be a printed circuit board, and the printed circuit board may be provided with a plurality of pads for electrical connection with the electronic component 1. The electronic component 1 may be any element mounted on a printed circuit board including an integrated circuit chip (IC), a manual element, or the like, and the electronic component 1 is provided with an electrical connection pattern 2 electrically connected to a plurality of pads provided on a board 3 such as the printed circuit board. For example, the electrical connection pattern 2 provided on the electronic component 1 may be a solder ball, but is not limited thereto, and may be any unit that can be electrically connected to the substrate 3, such as a wire. On the other hand, for example, the stage 10 for disposing the substrate 3 may be a mechanically added component, but is not limited thereto, and may refer to a conventional bottom surface instead of a mechanically added component.
The heating unit 20 heats the electric connection pattern 2 provided on the electronic component 1 by heating a region including the electronic component 1 mounted on the substrate 3. For example, the heating section 20 can heat the region including the electronic component 1 by an air convection heating method or an optical radiation heating method.
As a specific example, the heating unit 20 may heat the region including the electronic component 1 by supplying hot air to the region including the electronic component 1. As another specific example, the heating unit 20 may heat the region including the electronic component 1 by irradiating ultraviolet rays or infrared rays or light including ultraviolet rays and infrared rays to the region including the electronic component 1. In the following, this will be described in detail by another embodiment.
The laser irradiation section 30 irradiates the electronic component 1 with laser light to heat the electrical connection pattern 2 provided in the electronic component 1.
For example, the light source supplied by the laser irradiation unit 30 may be a simultaneous irradiation surface light source that irradiates all the areas belonging to the laser irradiation area. As another example, the light source supplied by the laser irradiation unit 30 may be a sequential irradiation surface light source sequentially irradiating a plurality of individual places belonging to the laser irradiation area. As another example, the light source supplied from the laser irradiation unit 30 is a point light source in practice, and the point light source can be scanned by a high-speed mirror or driven by a lower stage to obtain a surface light source irradiation effect with reference to a laser irradiation area.
The control command input unit 40 is a component for receiving a job control command, and the job control command may be input by an operator or automatically according to a preset job program. In the other figures below, the illustration of the control instruction input section 40 and the related description will be omitted.
The control unit 50 operates the heating unit 20 and the laser irradiation unit 30 in accordance with the operation control command received by the control command input unit 40 so as to reflow (or reflow soldering, welding, bonding) the electronic component 1 to the substrate 3 or to rework (or debond, detach, release) the electronic component 1 reflowed to the substrate 3.
According to the control of such a control section 50, the electrical connection pattern 2 of the electronic component 1 is heated alone or by being heated in an overlapping manner by the heat transferred from the heating section 20 and the laser irradiation section 30, 1) thereby reducing the heating time for reflow or rework, 2) preventing damage to the surface of the electronic component 1 as the first irradiation surface of the laser light during the heating for reflow or rework, 3) not affecting other electronic components than the target electronic component for reflow or rework and stably reflow or rework only the target electronic component to the substrate 3.
A specific and exemplary control operation of the control section 50 is described below.
First, when the operation control command is in the sequential operation mode, the control unit 50 may cause the heating unit 20 and the laser irradiation unit 30 to operate sequentially, instead of simultaneously operating at the same time. As a specific example, 1) the control unit 50 causes the heating unit 20 to operate to heat the target electronic component and the surrounding area thereof, and after the electrical connection pattern 2 provided on the electronic component is heated to a temperature before the melting point, 2) causes the heating unit 20 to stop operating, and causes the laser irradiation unit 30 to operate to cause the electrical connection pattern 2 provided on the target electronic component to reach the melting point.
Second, when the operation control command is in the simultaneous operation mode, the control unit 50 may operate the heating unit 20 and the laser irradiation unit 30 simultaneously in time. Accordingly, 1) the temperature of the target electronic component and the surrounding area thereof increases by the heat supplied from the heating portion 20, but the electrical connection pattern 2 cannot reach the melting point. 2) At the same time, the laser heating section 20 irradiates the target electronic component with laser light, and therefore the electrical connection pattern 2 provided on the target transfer element reaches the melting point, but does not irradiate the electrical connection pattern provided on the electronic component located around the target electronic component, and therefore the electrical connection pattern provided on the surrounding electronic component cannot reach the melting point.
Third, when the operation control command is in the overlapping operation mode, the control unit 50 may operate the heating unit 20 and the laser irradiation unit 30 so as to overlap each other for at least a part of the time zone. In specific examples, 1) the control unit 50 causes the heating unit 20 to operate only for a first period of time to raise the temperature of the target electronic component and its surrounding area, and 2) causes the heating unit 20 and the laser irradiation unit 30 to operate for a second period of time to raise the temperature of the target electronic component to a temperature higher than that of the surrounding area, so that the electrical connection pattern 2 provided on the target electronic component reaches the melting point.
Fig. 4 is a structural diagram of a laser irradiation section of the reflow and rework apparatus of the electronic component according to the embodiment of the present invention.
As shown in fig. 4, the present invention includes an infrared laser irradiation unit 120, and the infrared laser irradiation unit 120 includes a power supply unit 110 for supplying power and a laser oscillator 121 for generating an infrared laser beam.
The infrared laser beam irradiated from the laser irradiation unit 120 is transmitted through the electronic component to be removed, and heats and melts the welded portion, which welds the substrate and the electronic component. The SOLDER portion means a joint portion formed such as a SOLDER BALL (SOLDER BALL), a SOLDER BUMP (SOLDER BUMP), or the like and passing through a SOLDER PASTE (SOLDER PASTE), or the like, and hereinafter, collectively referred to as a SOLDER BALL in this specification.
The infrared laser beam irradiated from the infrared laser beam irradiation part 120 is transmitted through the ethylmethyl carbonate mold layer and the silicon chip of the electronic part to irradiate the solder balls, and for this purpose, may have an infrared wavelength range effective to transmit the ethylmethyl carbonate mold layer, for example, "800nm to 1200nm" or "1400nm to 1600nm" or "1800nm to 2200nm" or "2500nm to 3200nm". A part of the laser beam does not transmit the methyl ethyl carbonate mold layer according to the transmittance of each wavelength of the laser beam and heats the surface thereof to transfer heat to the lower soldering part of the electronic component.
In the case of the conventional semiconductor chip, the thickness of the ethylmethyl carbonate mold layer is several mm or more, and therefore, the transmission amount of the infrared laser beam passing through the semiconductor chip is small, but the thickness of the ethylmethyl carbonate mold layer of the recent semiconductor chip becomes very thin, and 1000 μm to 600 μm or less is called a mainstream product. Therefore, in the case of a semiconductor chip provided with the thin film type methylethyl carbonate mold layer as described above, the transmission amount of the infrared laser beam of the present invention can sufficiently heat and melt the solder balls disposed in the soldering portion at the lower portion of the semiconductor chip into a liquid state. Further, the laser beam transmittance of silicon, which is a main material of the semiconductor chip, also increases sharply in the infrared wavelength range, and the laser beam transmittance increases sharply with an increase in the infrared wavelength, so that excellent transmittance can be confirmed when the infrared laser beam of the present invention is irradiated to the silicon chip.
Fig. 5 is a schematic operation diagram of a laser irradiation part of the reflow and rework apparatus of the electronic component according to an embodiment of the present invention.
As shown in fig. 4 and 5, the infrared laser beam irradiation section 120 includes, for example: a beam shaper 122 that converts an infrared laser beam in a spot form generated by the laser oscillator 121 and transmitted through the optical fiber 100 into a surface light source form; an optical lens module 123 for irradiating an electronic component to be removed with an infrared laser beam converted into a surface light source form; a driving device 124 that drives the optical lens module 123 in such a manner that the area of the infrared laser beam output from the laser oscillator 121 corresponds to or is smaller than the surface area of the electronic component that is the removal object; and a control device (not shown) for controlling the operation of the driving device 124. The control device may also be used to control the laser beam irradiation section structural elements other than the driving device 124, in which case its function is incorporated in the control section 50.
For example, a beam shaper 122 (beam shaper) converts a laser beam in a gaussian form into a surface light source having a uniform energy distribution in a cross section. The beam shaper 122 may include an optical fiber 100 and a square light pipe (Square Light Pipe) for forming a uniform quadrilateral laser. Alternatively, the beam shaper may be realized as a refractive optical element (Refractive Optical Element) type which is a diffraction optical element (Diffractive Optical Element) type or not, a microlens Array (Micro Lens Array) type in which a plurality of microlenses are provided on an incident surface or an exit surface, or the like.
On the other hand, the control section 50 may control the driving device 124 so that the area of the infrared laser beam irradiated through the optical lens module 123 corresponds to the surface area of the electronic component having the smallest surface area among the plurality of electronic components 141 that are the removal targets or is smaller than the surface area of the electronic component 141.
According to the embodiment, the user can manually control the driving device 124, in which case, the area of the infrared laser beam irradiated through the optical lens module 123 may be arbitrarily adjusted so as to correspond to the surface area of the smallest surface area of the electronic component among the plurality of electronic components 141 as the removal object or be smaller than the surface area of the electronic component 141.
As described above, the phenomenon in which heat is applied to other adjacent electronic components or normal electronic components located on the substrate 140 by the laser beam can be minimized by minimizing the area of the laser beam, and thus, only the electronic components that are the removal object can be removed.
When the area of the infrared laser beam is smaller than the surface area of the electronic component 141, if a part of the area of the electronic component is heated by the laser beam irradiated to the electronic component, heat is diffused from the part of the area to other areas of the electronic component, and therefore, in addition to the irradiated area of the laser beam, the remaining area of the electronic component that needs to be subjected to debonding (De-bonding) or debonding (De-bonding) can be melted.
In some cases, since a plurality of elements are arranged around the semiconductor chip, for example, 200 μm×100 μm-sized capacitors or 1004 (1000 μm×400 μm) -sized capacitors are arranged at a very narrow interval in a high density, when a damaged one of the capacitors is to be removed, an optical device capable of changing the cross-sectional area of the laser beam is required if the area of the laser beam is changed according to the size of the target element, and thus the increase in the overall price of the device is considerable.
Therefore, when using the variable type optical lens module, if the fixed type optical lens module is applied to make the cross-sectional area of the laser beam according to the area of the smallest electronic component and the surface area of the electronic component slightly larger than the smallest electronic component, instead of avoiding the trouble of continuously replacing the lens for installation, the small-sized element can be removed without replacing the lens by using the heat conduction of the irradiation heat formed by the laser beam.
As an example, the optical lens module 123 of this embodiment is composed of at least one fixed lens, and the control unit 50 controls the driving device 124 so that the optical lens module 123 moves in the optical axis direction of the irradiation of the infrared laser beam, so as to adjust the area of the electronic component when the infrared laser beam irradiated through the optical lens module 123 reaches the electronic component.
In order to configure a plurality of lenses of mutually different magnifications, at least one fixed lens is arranged in a regular annular array (e.g., cylindrical) on a lens plate so that lenses of mutually different magnifications are adapted according to manual operation by a user.
The coupling structure of the optical lens module 123 having the fixed lens structure and the driving device 124 for linearly driving the optical lens module 123 as described above is simple as a whole, and thus the possibility of malfunction is low and the area adjusting function required to achieve the object of the present invention can be sufficiently performed.
Fig. 6 is an exemplary configuration diagram of an optical lens module of a laser irradiation section of an electronic component reflow and rework apparatus according to an embodiment of the present invention.
The apparatus shown in fig. 6 employs a variable optical lens module 123 having a plurality of lenses. The control unit 50 controls the driving device 124 so that the optical lens module 123 composed of a plurality of lenses moves in the optical axis direction of the irradiation of the infrared laser beam, thereby adjusting the cross-sectional area of the infrared laser beam irradiated through the optical lens module 123.
For example, in the optical lens module 123, a plurality of lenses are mounted in a predetermined barrel so as to be spaced apart from each other, and the driving device 124 individually moves up or down the plurality of lens modules to change the area and the irradiation range of the surface light source. As described above, the optical lens module 123 provided with a plurality of lenses can easily adjust the shape and area of the surface light source, compared with the case of providing a fixed lens, and can be precisely controlled.
Referring to fig. 6, the plurality of lenses constituting the optical lens module 123 include a convex lens 1231, a first cylindrical lens 1232, a second cylindrical lens 1233, and a focusing lens 1234. A plurality of lenses are located on the exit side of the beam shaper 122 to adjust the size and shape of the irradiation region of the laser light. At this time, the first cylindrical lens and the second cylindrical lens are arranged so that the focusing direction is perpendicular to each other, and the respective lenses are adjusted in the beam size in the direction perpendicular to each other, thereby forming various rectangular-shaped beams.
First, a convex lens 1231 may be disposed adjacent to the exit side of the beam shaper 122 that homogenizes the laser light to condense the surface-irradiated laser light. The laser light may diverge to spread as it passes through the exit side of the beam shaper 122. Therefore, the convex lens 1231 condenses the uniform beam so as not to diverge, and can transmit the condensed laser light to the first cylindrical lens 1232. The first irradiation region A1 may be formed by the laser light of the convex lens 1231.
The first cylindrical lens 1232 may adjust a first axial length of the laser light passing through the convex lens 1231. The first cylindrical lens 1232 may be provided in a shape cut along the longitudinal axis in a state where the cylinder stands, and the first cylindrical lens 1232 may be disposed in a lower portion of the convex lens 1231 such that a convex surface of the first cylindrical lens 1232 faces upward. The irradiation region of the laser light transmitted through the first cylindrical lens 1232 can be set so as to reduce the length in the first axial direction. Since the first axial direction length of the irradiation region is reduced, the irradiation region of the laser light transmitted through the first cylindrical lens 1232 may be changed from the first irradiation region A1 to the second irradiation region A2.
The second cylindrical lens 1233 may adjust a second axial length of the laser light passing through the first cylindrical lens 1232. The second axial length is orthogonal to the first axial length, and the second cylindrical lens 1233 may have the same shape as the first cylindrical lens 1232. The second cylindrical lens 1233 is provided at a lower portion of the first cylindrical lens 1232, is disposed with a convex surface facing upward, and can be disposed so that a direction thereof is orthogonal to the first cylindrical lens 1232. The irradiation region of the laser light transmitted through the second cylindrical lens 1233 may be reduced in length in the second axial direction. Since the second axial length of the irradiation region is reduced, the irradiation region of the laser light transmitted through the second cylindrical lens 1233 may be changed from the second irradiation region A2 to the third irradiation region A3.
The first and second cylindrical lenses 1232 and 1233 can easily adjust the shape of the irradiation region of the laser light. The first and second cylindrical lenses 1232 and 1233 may be any structure as long as the first axial length and the second axial length of the irradiation region of the laser light can be easily adjusted. The first cylindrical lens 1232 and the second cylindrical lens 1233 may be disposed such that the convex surface faces downward, and lenses having concave upper surfaces may be disposed at positions of the first cylindrical lens 1232 and the second cylindrical lens 1233. The irradiation region of the laser light can be adjusted so that the first axial length and the second axial length extend. The first cylindrical lens 1232 and the second cylindrical lens 1233 may be included in an embodiment as long as the ratio of the lateral and longitudinal lengths of the irradiation region can be adjusted by adjusting the first axial length and the second axial length of the irradiation region of the laser light.
The first cylindrical lens 1232 and the second cylindrical lens 1233 are interchangeable in position. That is, the laser beam transmitted through the convex lens 1231 is transmitted through the second cylindrical lens 1233 preferentially over the first cylindrical lens 1232 to adjust the second axial length of the irradiation region, and then the first axial length is adjusted.
The focusing lens 1234 may make the irradiation region of the laser light passing through the first and second cylindrical lenses 1232 and 1233 have a preset width. The focusing lens 1234 maintains the shape of the illumination region formed by the second cylindrical lens 1233, and may increase or decrease the width of the illumination region. The focusing lens 1234 may increase or decrease the width of the irradiation region in a state where the shape is maintained by a ratio of the first axial length to the second axial length of the irradiation region formed by the second cylindrical lens 1233. The third irradiation region A3, which is an irradiation region of the laser light transmitted through the second cylindrical lens 1233, may be enlarged with the focusing lens 1234 to have the width of the fourth irradiation region A4. The focusing lens 1234 may also reduce the width of the third illumination area A3. The focusing lens 1234 may be provided in a replaceable manner.
Fig. 7 is a graph showing a surface temperature of a semiconductor chip absorbing an infrared laser beam irradiated from a laser irradiation section of a reflow and rework apparatus of an electronic component according to an embodiment of the present invention.
According to the detection result of the present inventors, when the temperature of the korean hierarchy absorbs the laser beam in the range of 220 ℃ to 260 ℃ higher than the melting point and heats it, it is possible to control in such a manner that the surface temperature of the semiconductor chip becomes in the range of about 300 ℃ to 350 ℃. The solder can be melted by irradiating the infrared laser beam within about 1 millisecond or more and 30 seconds or less so as not to affect the semiconductor chip.
EMBODIMENTS FOR CARRYING OUT THE INVENTION
Fig. 8 is a schematic working diagram of a reflow and rework apparatus for electronic components according to another embodiment of the present invention.
Since electronic components such as semiconductor chips having a thickness of 1000 μm or more and electric elements of power transistors release much heat, thick lead electrode wires having very excellent heat dissipation performance are often wired on the side, and in this case, a printed circuit board having excellent heat dissipation performance is usually applied and a heat dissipation plate is additionally attached to the lower portion of the printed circuit board for simultaneous use. Therefore, when such an electronic component is irradiated with a laser beam, most of the heat is released, and therefore, there is a problem that excessive laser irradiation is required and the temperature of the electronic component is excessively increased due to the excessive laser irradiation in order to melt the lead electrode wire, that is, the solder paste of the lead.
The reflow and reflow processing in the embodiment shown in fig. 8 is preferably arranged between the laser irradiation unit 30 and the electronic component to be removed, and includes a laser beam blocking cover 210 for blocking the infrared laser beam irradiated from the laser irradiation unit 30 so as not to transmit the electronic component to be removed.
The laser irradiation unit 30 irradiates a laser beam having an area corresponding to the area including the area of the side lead 4 of the electronic component 1 soldered to the substrate 3 to be removed.
The laser beam blocking cover 210 for selectively blocking and transmitting the laser beam includes an opening portion 211 for transmitting the infrared laser beam and a blocking portion 212 for blocking the infrared laser beam, the blocking portion 212 for blocking the infrared laser beam irradiated to the electronic component 1, and the opening portion 211 allows the infrared laser beam to pass through the lead 4 so as to allow the infrared laser beam to be irradiated to the lead 4, thereby attaching the lead 4 to the substrate 3 and melting the solder.
Fig. 9 is a schematic operation diagram of a reflow and rework apparatus of an electronic component according to another embodiment of the present invention.
In the case where the electronic component 1 such as a semiconductor chip is adhesively fixed to the substrate 3 by using the solder BALLs (SODLER BALL) 4 and the resin adhesive 5, if the laser irradiation portion 30 is irradiated with an infrared laser beam in order to melt the solder BALLs 4, the resin adhesive 5 is further fastened by the heat carbonization of the laser beam, and therefore, even if the solder BALLs 4 are melted, it is difficult to remove the electronic component 1 due to the fastened resin adhesive 5.
Therefore, when the solder balls 2 are melted and removed by heating with the infrared laser beam and the ultraviolet laser beam is irradiated to the resin binder 5 by the ultraviolet irradiation unit 510 by utilizing the characteristic that the resin binder 5 is a polymer compound, the ultraviolet rays can break the polymer link chain of the resin binder 5 and decompose the resin binder 5 in a Non-thermal manner.
The ultraviolet irradiation section 22 may be realized by an ultraviolet laser oscillator that generates an ultraviolet laser beam or a high-output ultraviolet light emitting diode module that generates a high-output ultraviolet laser beam, and as described above, the electronic component 1 soldered on the substrate 3 with the solder ball 2 and the resin adhesive 5 may be smoothly removed by simultaneously performing irradiation of the infrared laser beam and the ultraviolet ray.
In this case, the ultraviolet irradiation section 22 may be heated as an energy source instead of hot air, and in contrast, the irradiation of the laser beam and the ultraviolet rays may be performed simultaneously, sequentially or in an overlapping manner, by an additional heating unit in a state where the substrate 3 and the electronic component 1 are preheated.
The present invention described in the above embodiments is not limited to the above embodiments and the drawings, and various substitutions, modifications and changes may be made without departing from the technical matters of the present invention, which will be apparent to those skilled in the art to which the present invention pertains. Therefore, the true technical scope of the present invention should be defined by the scope of the invention.
Claims (17)
1. A reflow and reworking device of electronic components is characterized in that,
comprising the following steps:
a stage for disposing a substrate on which an electronic component to be reflowed or reworked is mounted;
a heating unit that heats an electric connection pattern provided on the electronic component by heating a region including the electronic component;
a laser irradiation unit that irradiates the electronic component with laser light to heat an electrical connection pattern provided on the electronic component;
a control instruction input section for receiving a job control instruction; and
a control unit for controlling the heating unit and the laser irradiation unit to operate in accordance with the operation control command received by the control command input unit so as to reflow the electronic component to the substrate or rework the electronic component reflowed to the substrate,
when the operation control command is in a sequential operation mode, the control unit controls the heating unit and the laser irradiation unit to sequentially operate,
when the operation control command is in the simultaneous operation mode, the control unit controls the heating unit and the laser irradiation unit to operate simultaneously,
When the operation control command is in the overlapping operation mode, the control unit controls the heating unit and the laser irradiation unit to overlap each other in at least a partial region.
2. The reflow and rework apparatus of claim 1, wherein the electrical connection pattern of the electronic component is individually heated by heat transferred from the heating unit and the laser irradiation unit, thereby reducing a heating time for reflow or rework, and preventing damage to the surface of the electronic component as a laser irradiation surface during the heating for reflow or rework.
3. The reflow and rework apparatus of claim 1, wherein the heating unit heats the region including the electronic component by air convection heating or optical radiation heating.
4. The reflow and rework apparatus of claim 3, wherein the heating unit heats the region including the electronic component by supplying hot air to the region including the electronic component.
5. The reflow and rework apparatus of claim 3, wherein the heating unit irradiates light including at least one of ultraviolet rays and infrared rays to the region including the electronic component to heat the region including the electronic component.
6. The reflow and rework apparatus of claim 1, wherein the light source supplied by the laser irradiation unit is a simultaneous irradiation surface light source that irradiates all the areas belonging to the laser irradiation area.
7. The reflow and rework apparatus of claim 1, wherein the light source supplied by the laser irradiation unit is a sequentially irradiated surface light source sequentially irradiating a plurality of individual places belonging to the laser irradiation area.
8. The reflow and rework apparatus of claim 1, wherein the light source supplied by the laser irradiation unit is a point light source, and the point light source is scanned by a high-speed mirror to obtain the surface light source irradiation effect with reference to the laser irradiation area.
9. The reflow and rework apparatus of claim 1, wherein the laser beam irradiated from the laser irradiation unit is partially transmitted by the optical power of the laser beam, and the electronic component to be removed is heated and melted at the soldering portion, and the substrate and the electronic component are soldered at the soldering portion.
10. The reflow and rework apparatus of claim 1, wherein the laser irradiation section includes:
A beam shaper for converting the infrared laser generated from the laser oscillator and transmitted through the optical fiber into a surface light source form;
an optical lens module for irradiating the electronic component as a removal object with an infrared laser beam converted into a surface light source form by the beam shaper;
a driving device for driving the optical lens module so that the area of the infrared laser beam corresponds to or is smaller than the surface area of the electronic component to be removed; and
and a control device for controlling the operation of the driving device.
11. The reflow and rework apparatus of claim 1, wherein the laser beam irradiated from the laser irradiation unit has a wavelength range in which the urethane carbonate mold layer and the silicon chip of the electronic component to be removed can be transmitted at a comparable ratio.
12. The reflow and rework apparatus of claim 11, wherein the laser beam has one wavelength range of 800nm to 1200nm, 1400nm to 1600nm, 1800nm to 2200nm, and 2500nm to 3200nm, and the ethylmethyl carbonate mold layer of the electronic component has a thickness of 1000 μm or less.
13. The apparatus according to claim 11, wherein the laser irradiation section controls a heating temperature of the soldering section to be 220 ℃ to 260 ℃, controls a surface temperature of the electronic component to be removed to be 300 ℃ to 350 ℃ or less, and controls an irradiation time of the laser beam to be 1 ms to 30 seconds.
14. The reflow and rework apparatus of claim 11, wherein the laser irradiation section controls the substrate temperature to 200 ℃ or less and the irradiation time of the laser beam to 1 ms to 30 seconds.
15. The reflow and reworking apparatus of electronic components as claimed in claim 1, wherein,
and a cover for blocking the laser beam, which is arranged between the laser irradiation part and the electronic component as the object to be removed, and blocks the laser beam irradiated from the laser irradiation part in such a way that the laser beam cannot transmit the electronic component as the object to be removed,
the laser irradiation section irradiates a laser beam having an irradiation area including a lead region of a side wiring of the electronic component to be removed.
16. The reflow and reworking apparatus of an electronic component as claimed in claim 1 further comprising an ultraviolet irradiation section for irradiating ultraviolet rays at various angles and directions for decomposing a resin adhesive attached to a soldered portion between the electronic component to be removed and the substrate.
17. The apparatus according to claim 16, wherein the ultraviolet irradiation unit is an ultraviolet laser oscillator for generating an ultraviolet laser beam or a high-output ultraviolet light emitting diode module for generating a high-output ultraviolet beam.
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| KR10-2018-0014277 | 2018-02-05 | ||
| KR1020180014277A KR102047445B1 (en) | 2018-02-05 | 2018-02-05 | Bonding and debonding apparatus for electronic parts |
| CN201980000268.6A CN110462807A (en) | 2018-02-05 | 2019-02-07 | The reflux of electronic component and device of doing over again |
| PCT/KR2019/001519 WO2019151842A1 (en) | 2018-02-05 | 2019-02-07 | Reflow and rework device for electronic component |
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| CN201980000268.6A Division CN110462807A (en) | 2018-02-05 | 2019-02-07 | The reflux of electronic component and device of doing over again |
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| CN202310751139.9A Pending CN116685076A (en) | 2018-02-05 | 2019-02-07 | Reflow and tooling return of electronic components |
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| KR102436955B1 (en) * | 2020-03-11 | 2022-08-26 | 넥스타테크놀로지 주식회사 | Mounting head and apparatus for mounting component comprising the same |
| KR20220133377A (en) | 2021-03-24 | 2022-10-05 | 삼성전자주식회사 | Apparatus of manufacturing semiconductor |
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| KR20090123280A (en) * | 2008-05-27 | 2009-12-02 | 삼성전자주식회사 | Method of fabricating semiconductor chip package, semiconductor wafer and method of sawing the same |
| WO2015072598A1 (en) * | 2013-11-14 | 2015-05-21 | (주)정원기술 | Laser optic device for bonding flip chip by laser pressing |
| US10083843B2 (en) * | 2014-12-17 | 2018-09-25 | Ultratech, Inc. | Laser annealing systems and methods with ultra-short dwell times |
| KR101702104B1 (en) | 2015-11-20 | 2017-02-02 | 세교 (주) | Rework station for reworking electronic device including semiconductor device |
| CN107359134B (en) * | 2017-07-28 | 2020-09-11 | 湖北三江航天红峰控制有限公司 | Method and device for realizing BGA chip repair by using laser |
-
2018
- 2018-02-05 KR KR1020180014277A patent/KR102047445B1/en active IP Right Grant
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2019
- 2019-02-07 CN CN201980000268.6A patent/CN110462807A/en active Pending
- 2019-02-07 CN CN202310751139.9A patent/CN116685076A/en active Pending
- 2019-02-07 WO PCT/KR2019/001519 patent/WO2019151842A1/en active Application Filing
Also Published As
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|---|---|
| CN110462807A (en) | 2019-11-15 |
| KR102047445B1 (en) | 2019-11-21 |
| WO2019151842A1 (en) | 2019-08-08 |
| KR20190094755A (en) | 2019-08-14 |
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