CN116683262B

CN116683262B - Microwave source, manufacturing method thereof and microwave laser generating method

Info

Publication number: CN116683262B
Application number: CN202310967780.6A
Authority: CN
Inventors: 王辉; 于晓艳; 李勇; 刘强
Original assignee: Suzhou Inspur Intelligent Technology Co Ltd
Current assignee: Suzhou Inspur Intelligent Technology Co Ltd
Priority date: 2023-08-02
Filing date: 2023-08-02
Publication date: 2023-11-03
Anticipated expiration: 2043-08-02
Also published as: CN116683262A

Abstract

The embodiment of the application provides a microwave source, a manufacturing method thereof and a microwave laser generating method, wherein the microwave source comprises the following components: a superconducting cavity; the superconducting film is positioned at one side of the superconducting cavity; the support structure is positioned between the superconducting cavity and the superconducting thin film and is respectively contacted with the superconducting cavity and the superconducting thin film; the multi-mode sound wave device is positioned on the surface of the supporting structure and used for exciting sound waves to propagate on the supporting structure, so that the supporting structure deforms and drives the superconducting cavity and/or the superconducting film to move, and the frequency adjustment of the superconducting cavity is realized. The application solves the problem that the microwave signal source integrated on the chip in the related technology has larger refrigeration power and space consumption for the extremely low temperature area of the dilution refrigerator.

Description

Microwave source, manufacturing method thereof and microwave laser generating method

Technical Field

The embodiment of the application relates to the technical field of quanta, in particular to a microwave source, a manufacturing method thereof, a microwave laser generating method and a superconducting quanta chip.

Background

In the current superconducting quantum chip, a microwave signal source is integrated on the chip to generate a coherent microwave light source to drive and measure the quantum bits, so that the volume and the manufacturing cost of a superconducting quantum computer measurement and control system can be effectively reduced, and the method is very important for a multi-bit quantum system.

At present, the development of on-chip microwave light sources for low-temperature electronics is mainly based on a superconducting Josephson junction and superconducting cavity hybrid system, or single-flux quantum pulse to generate microwave signals. Qubits are currently based on aluminum materials (superconducting critical temperature 1.2K), so such on-chip integrated microwave sources or microwave pulses typically need to be placed in a temperature region below 1K, occupy the refrigeration power and internal low temperature space of the dilution refrigerator, and generate noise to the chip. The driving frequency of the Josephson junction on the system light source is close to the bit frequency of the quantum chip, and noise or crosstalk can be generated on the chip. The cooling power of the dilution refrigerator is relatively low. The laser generated by the optical cavity and the quantum bit needs larger driving, more radiation noise and heat are generated inside the dilution refrigerator, and the refrigeration efficiency of the dilution refrigerator is affected.

Disclosure of Invention

The embodiment of the application provides a microwave source, a manufacturing method thereof, a microwave laser generating method and a superconducting quantum chip, which at least solve the problem that a microwave signal source integrated on the chip in the related technology has larger refrigeration power and space consumption in a very low temperature area of a dilution refrigerator.

According to an embodiment of the present application, there is provided a microwave source including: a superconducting cavity; the superconducting film is positioned at one side of the superconducting cavity; a support structure located between the superconducting cavity and the superconducting thin film, and the support structure is respectively contacted with the superconducting cavity and the superconducting thin film; the multi-mode acoustic wave device is positioned on the surface of the supporting structure and is used for exciting acoustic waves to propagate on the supporting structure, so that the supporting structure deforms and drives the superconducting cavity and/or the superconducting film to move, and the frequency of the superconducting cavity is adjusted.

In one exemplary embodiment, the acoustic wave device of multiple modes includes a multi-mode surface acoustic wave device.

In one exemplary embodiment, the support structure includes: at least two elastic support posts, at least two elastic support posts are arranged at intervals, the first ends of at least two elastic support posts are in contact with the surface of the superconducting cavity, part of the surfaces of the second ends of at least two elastic support posts are in contact with the acoustic wave device, and part of the surfaces of the second ends of at least two elastic support posts are in contact with the superconducting thin film.

In an exemplary embodiment, the microwave source further includes: and the dielectric layer is positioned between the superconducting cavity and the superconducting film.

In an exemplary embodiment, the dielectric layer has a dielectric constant of 3.9-11.3, and the etching selectivity of the buffer oxide etching solution to the superconducting cavity and the dielectric layer is 0.002-0.0026.

In one exemplary embodiment, the acoustic wave device includes: at least two single-mode sub-acoustic wave devices, at least two of which have different fundamental frequencies.

In an exemplary embodiment, the thickness of the superconducting thin film is 100nm to 500nm.

In one exemplary embodiment, the material of the support structure comprises a deformable material.

In one exemplary embodiment, the superconducting cavity has a frequency of:

，

wherein f is the frequency of the superconducting cavity, L is the inductance of the superconducting cavity, C is the capacitance of the superconducting cavity,for the fixed part of the capacitance of the superconducting cavity, < >>For the adjustable part of the capacitance of the superconducting cavity, and (2)>Is vacuum dielectric constant, +.>And A is the relative dielectric constant, A is the area size of the superconducting cavity opposite to the superconducting film, and s is the distance between the superconducting cavity and the superconducting film.

In one exemplary embodiment, a critical temperature of the superconducting material constituting the superconducting cavity and the superconducting thin film is greater than 4K.

According to another embodiment of the present application, there is provided a method for manufacturing the microwave source, including: providing a superconducting cavity; forming a support structure on a portion of a surface of the superconducting cavity; forming a superconducting thin film on a portion of a surface of the support structure remote from the superconducting cavity; a multi-modal acoustic wave device is formed on the support structure.

In one exemplary embodiment, forming a support structure on a portion of a surface of the superconducting cavity includes: at least two elastic struts are formed on the surface of the superconducting cavity, and the at least two elastic struts are arranged at intervals.

In one exemplary embodiment, forming a superconducting thin film on a portion of a surface of the support structure remote from the superconducting cavity includes: forming a dielectric layer on the exposed surface of the superconducting cavity, wherein the surface of the dielectric layer away from the superconducting cavity and the surface of the support structure away from the superconducting cavity are on the same plane; forming the superconducting thin film on the surface of the dielectric layer far away from the superconducting cavity and the surface of the supporting structure far away from the superconducting cavity; and removing the dielectric layer.

In an exemplary embodiment, removing the dielectric layer includes: placing the device formed with the superconducting thin film in a reaction chamber; and introducing etching gas into the reaction chamber to etch and remove the dielectric layer.

In an exemplary embodiment, the material of the dielectric layer includes silicon dioxide and the etching gas includes hydrogen fluoride gas.

In one exemplary embodiment, forming a multi-modal acoustic wave device on the support structure includes: and forming a sub-acoustic wave device on a part of the surface of each elastic pillar, which is far away from the superconducting cavity, wherein the basic frequencies of at least two sub-acoustic wave devices are different.

According to still another embodiment of the present application, there is also provided a microwave laser generating method of the microwave source, including: providing driving voltage for a multi-mode acoustic wave device, so that the multi-mode acoustic wave device excites acoustic waves with at least two fundamental frequencies, the acoustic waves with at least two fundamental frequencies are mutually overlapped to form a first super-mode and a second super-mode, and the energy level of the first super-mode is smaller than that of the second super-mode; phonons excited by the acoustic wave device transition between the first and second supermodes to generate a microwave laser.

In one exemplary embodiment, phonons excited by the acoustic wave device transition between the first and second supermodes to generate a microwave laser, comprising: the phonons transition from the second supermode to the first supermode to release photons into the superconducting cavity; the phonons transition from the first supermode to the second supermode to absorb the photons from the superconducting cavity; in case the number of released photons is larger than the number of absorbed photons, a microwave laser is generated.

In one exemplary embodiment, the Hamiltonian amount of the microwave source is:

，

wherein H is the Ha Midu quantity,is about Planck constant +.>For the frequency corresponding to the second supermode,generating operators for said phonons of said second super-mode, +.>Is an annihilation operator of the phonon of the second super-mode, +.>For the frequency corresponding to said first supermode,/->Generating operators for said phonons of said first super-modality, +.>Is an annihilation operator of the phonon of the first super-mode, +.>For the frequency of the photons, +.>Generating operators for said photons, +.>Is an annihilation operator of the photon, < > >Is the coupling strength of the superconducting cavity and the acoustic wave device.

In an exemplary embodiment, the phonon equation of motion and the photon equation of motion of the microwave source are respectively:

，

wherein ,is->I is an imaginary number, i ² =-1，/>For the decay rate of the first and second supermode +.>Is an optical Lagrangian operator, p isPhonon annihilation of the first super-mode and phonon generation of the second super-mode,/->Is the derivative of p>For the attenuation rate of the optical mode in the superconducting cavity,/->Is an acoustic lagrangian operator.

In one exemplary embodiment, in the case where the number of released photons is greater than the number of absorbed photons, the gain of the generated microwave laser is:

，

wherein ,。

according to another embodiment of the present application, there is also provided a superconducting quantum chip including: the microwave source is any one of the microwave sources or the microwave source manufactured by any one of the methods, and the microwave source generates microwave laser by any one of the methods.

According to the application, a microwave source comprising a superconducting cavity, a superconducting film, a supporting structure between the superconducting cavity and the supporting structure and a multi-mode acoustic wave device on the supporting structure is provided, the superconducting cavity and the acoustic wave device are mutually coupled, acoustic waves are excited to propagate on the supporting structure through the acoustic wave device, the supporting structure drives the superconducting cavity and/or the superconducting film to move according to acoustic deformation, so that the distance between the superconducting cavity and the superconducting film is changed, the capacitance of the superconducting cavity is changed due to the change of the distance between the superconducting cavity and the superconducting film, the frequency of the superconducting cavity is changed, the modulation of the acoustic waves on optics is formed, and the effect of driving the acoustic wave device to generate microwave laser is realized. Compared with the problem that the microwave signal source integrated on the chip in the prior art has larger refrigeration power and space consumption in the extremely low temperature region of the dilution refrigerator, the microwave source can be placed in the temperature region with higher temperature in the dilution refrigerator because the ultrasonic wave device in the microwave source does not need to be superconducting, thereby reducing the refrigeration power and space consumption in the extremely low temperature region of the dilution refrigerator.

Drawings

FIG. 1 is a block diagram of a microwave source according to an embodiment of the application;

FIG. 2 is a flow chart of a method of fabricating a microwave source according to an embodiment of the application;

fig. 3 to 7 are top views of structures obtained after each process step in the method for manufacturing a microwave source according to an embodiment of the present application;

FIG. 8 is a top view of the microwave source of FIG. 1;

fig. 9 is a flowchart of a microwave laser generating method of a microwave source according to an embodiment of the present application;

FIG. 10 is a schematic diagram of acoustic supermode versus photon pumping according to an embodiment of the present application.

Wherein the above figures include the following reference numerals:

10. a superconducting cavity; 11. a superconducting thin film; 12. a support structure; 120. an elastic support; 13. an acoustic wave device; 130. a sub-acoustic wave device; 14. a dielectric layer.

Detailed Description

Embodiments of the present application will be described in detail below with reference to the accompanying drawings in conjunction with the embodiments.

It should be noted that the terms "first," "second," and the like in the description and the claims of the present application and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order.

In this embodiment, a microwave source is provided, fig. 1 is a schematic structural diagram of a microwave source according to an embodiment of the present application, and as shown in fig. 1, the microwave source includes:

A superconducting cavity 10;

specifically, the superconducting cavity is a closed cavity made of superconducting materials. The superconducting cavity is flexibly designed according to actual needs in shape and size, and can comprise, but is not limited to, a superconducting resonant cavity, a superconducting cyclotron cavity, a superconducting microstrip cavity and the like.

A superconducting thin film 11 located on one side of the superconducting cavity 10;

specifically, the superconducting film is a film with superconducting performance, and the superconducting film can realize superconducting at a relatively high temperature due to the fact that the superconducting film has a high critical temperature. The material of the superconducting thin film can be any suitable superconducting material with higher critical temperature, such as copper oxide, lanthanum barium copper oxide and the like. Optionally, the material of the superconducting thin film includes at least one of the following: barium copper oxygen, bismuth strontium calcium copper oxygen. More specifically, the superconducting thin film may be made of copper oxide.

A support structure 12 located between the superconducting cavity 10 and the superconducting thin film 11, and the support structure 12 is in contact with the superconducting cavity 10 and the superconducting thin film 11, respectively;

optionally, the material of the support structure comprises a deformable material, so as to ensure that the support structure can deform under the action of sound waves. In particular, the above-mentioned support structure is constituted by a deformable material.

The multi-mode acoustic wave device 13 is located on the surface of the supporting structure 12, and the multi-mode acoustic wave device 13 is used for exciting the acoustic wave to propagate on the supporting structure 12, so that the supporting structure 12 deforms to drive the superconducting cavity 10 and/or the superconducting film 11 to move, and the frequency adjustment of the superconducting cavity 10 is realized.

Specifically, the acoustic wave device is an acoustic wave generating device, the multi-mode acoustic wave device can realize excitation of acoustic waves with different basic frequencies, the acoustic waves with different basic frequencies are mutually overlapped to form two super modes, and pumping of the acoustic waves to photons is realized through the two super modes to form microwave laser.

The above embodiment of the present application provides a microwave source including a superconducting cavity, a superconducting thin film, a support structure disposed therebetween, and a multi-mode acoustic wave device disposed on the support structure, wherein the superconducting cavity and the acoustic wave device are coupled to each other, and an acoustic wave is excited to propagate on the support structure by the acoustic wave device, and the support structure drives the superconducting cavity and/or the superconducting thin film to move according to acoustic deformation, so as to change a distance between the superconducting cavity and the superconducting thin film, and the change of the distance between the superconducting cavity and the superconducting thin film changes a capacitance of the superconducting cavity, so that a frequency of the superconducting cavity changes, and an optical modulation of the acoustic wave is formed, thereby realizing an effect of driving the acoustic wave device to generate microwave laser. Compared with the problem that the microwave signal source integrated on the chip in the prior art has larger refrigeration power and space consumption in the extremely low temperature region of the dilution refrigerator, the microwave source can be placed in the temperature region with higher temperature in the dilution refrigerator because the ultrasonic wave device in the microwave source does not need to be superconducting, thereby reducing the refrigeration power and space consumption in the extremely low temperature region of the dilution refrigerator.

In practical applications, those skilled in the art may select any suitable type of acoustic wave device, such as a surface acoustic wave device and a bulk acoustic wave device, and in one alternative aspect of the present application, the multi-modal acoustic wave device includes a multi-modal surface acoustic wave device. The acoustic surface wave device is used for converting an input electric signal into the acoustic surface wave through the inverse piezoelectric effect, so that the acoustic surface wave propagates along the surface of the supporting structure, and acoustic wave signals in different modes can be obtained by adjusting the size of the input electric signal, so that different microwave lasers are modulated. In addition, the surface acoustic wave device is driven by piezoelectricity, so that the efficiency of exciting the surface acoustic wave is high, and the requirement of generating and driving the microwave laser can be met; in addition, the radiation noise of the surface acoustic wave excited by the surface acoustic wave device is smaller, so that the noise or crosstalk of the surface acoustic wave device to the chip can be reduced; and the surface acoustic wave cannot be propagated in vacuum, is easy to be separated by physical separation, couples the surface acoustic wave device and the superconducting cavity to form an optomechanical system, and has small influence on the superconducting quantum chip when being placed in a higher temperature region of a dilution refrigerator by an integrated microwave source on a chip.

More specifically, the above-described acoustic wave device of the multi-mode is a bimodal surface acoustic wave device. Two acoustic wave overmodes can be formed through a bimodal acoustic surface wave device, so that the modulation effect of acoustic waves on optics is further realized, the device structure of a microwave source is simplified, and the device cost of the microwave source is reduced.

In addition to a multi-modal surface acoustic wave device, in yet another alternative embodiment of the present application, as shown in fig. 1, the acoustic wave device 13 may further include: at least two single-mode sub-acoustic wave devices 130, and at least two of the sub-acoustic wave devices 130 have different fundamental frequencies. In this embodiment, by setting at least two single-mode sub-acoustic wave devices with different fundamental frequencies, excitation of acoustic waves with different fundamental frequencies can be also realized, so as to form two supermodes, and further pumping of the acoustic waves to photons is realized through the two supermodes, so as to form microwave laser.

In a specific embodiment, the acoustic wave device is composed of two single-mode sub-acoustic wave devices with different fundamental frequencies, and the sub-acoustic wave devices are surface acoustic wave devices.

Optionally, as shown in fig. 1, the support structure 12 includes: at least two elastic supports 120, at least two elastic supports 120 are disposed at intervals, a first end of at least two elastic supports 120 is in contact with a surface of the superconducting cavity 10, a partial surface of a second end of at least two elastic supports 120 is in contact with the acoustic wave device 13, and a partial surface of a second end of at least two elastic supports 120 is in contact with the superconducting thin film 11. The stable support of the superconducting thin film is realized through at least two elastic support posts, so that the distances between the superconducting cavity and each position of the superconducting thin film are basically consistent.

In an exemplary embodiment, as shown in fig. 1, the elastic support columns 120 are provided in two, respectively, contact with the upper surfaces of the two ends of the superconducting cavity 10, and the single-mode sub-acoustic wave devices 130 are disposed on the elastic support columns 120 in one-to-one correspondence. Of course, in addition to the two illustrated elastic struts, three, four, or even more elastic struts may be provided.

In the present application, the medium between the superconducting cavity and the superconducting thin film may be air, and when the medium between the superconducting cavity and the superconducting thin film is air, the flexible range of the elastic support is large, and the modulation range is also large. Of course, the medium between the superconducting cavity and the superconducting thin film can be other medium materials, and the skilled person can flexibly design according to actual needs. In order to further simplify the manufacturing process of the microwave source, specifically, the microwave source further includes: and the dielectric layer is positioned between the superconducting cavity and the superconducting film. That is, the dielectric layer is filled between the superconducting cavity and the superconducting thin film in addition to the elastic support. The dielectric layer is needed to be grown on the superconducting cavity to be used as a supporting layer of the superconducting film before the superconducting film is generated on one side of the superconducting cavity, and the dielectric layer is reserved after the superconducting film is grown on the dielectric layer, so that a dielectric layer removing process can be saved, and the manufacturing process of the microwave source is simplified.

In a specific embodiment, the dielectric layer has a dielectric constant of 3.9-11.3, and the etching selectivity of the buffer oxide etching solution (Buffered oxide etch, abbreviated as BOE) to the superconducting cavity and the dielectric layer is 0.002-0.0026. The dielectric layer can effectively enhance the capacitance value of a capacitor formed by the superconducting cavity and the superconducting film. The etching rate of the BOE to the dielectric layer is much faster than that of the superconducting cavity, so that selective etching to the dielectric layer can be easily realized when the dielectric layer is not required to be reserved.

In addition, the etching selectivity of the buffer oxide etching solution to the superconducting thin film and the dielectric layer is also 0.002-0.0026.

One skilled in the art may select suitable materials for the dielectric layers described above, such as deformable materials, or other dielectric materials, etc. In one exemplary embodiment, the dielectric layer material includes silicon dioxide.

In a more specific embodiment, the dielectric layer is made of silicon dioxide. The silicon dioxide has the characteristics of high hardness, high temperature resistance, shock resistance, insulation and the like, has relatively stable chemical properties, does not react with water and does not react with common acid. And hydrofluoric acid reacts with silicon dioxide to form gaseous silicon tetrafluoride, which is a gas. Silicon dioxide is thus easily etched away by the hydrofluoric acid gas and little residue is generated.

Current experimental techniques may control the acoustic wave signal by programming the voltage applied to the acoustic wave device. When an acoustic wave signal emitted by the acoustic wave device propagates on the supporting structure, the distance s between the superconducting microstrip cavity and the superconducting film changes, the distance s vibrates almost periodically along with the acoustic wave and changes the capacitance of the superconducting cavity, and the frequency of the superconducting cavity also changes along with the acoustic wave, so that the modulation of the acoustic wave on optics, namely the coupling of the optical pressure type, is formed and is called optomechanical system (optomechanical).

Specifically, the capacitance of the superconducting cavity is divided into a fixed part capacitance and an adjustable part capacitance,

，

considering the capacitance of the tunable portion as approximately a parallel plate capacitance, the capacitance formula for the tunable portion is:

，

the frequency of the superconducting cavity is as follows:

，

when the acoustic wave is excited, the capacitance of the tunable portion changes with the frequency of the acoustic wave, and the frequency of photons within the superconducting cavity changes, so that phonons of the acoustic wave and photons within the superconducting cavity are coupled to each other.

Wherein f is the frequency of the superconducting cavity, L is the inductance of the superconducting cavity, C is the capacitance of the superconducting cavity,for the fixed part of the capacitance of the superconducting cavity, < >>For the adjustable part of the capacitance of the superconducting cavity, and (2) >Is vacuum dielectric constant, +.>And A is the relative dielectric constant, A is the area size of the superconducting cavity opposite to the superconducting film, and s is the distance between the superconducting cavity and the superconducting film.

In the above embodiment, the acoustic wave device located on the supporting structure excites the acoustic wave, so that the supporting structure deforms to change the height of the supporting structure, the distance between the superconducting cavity and the superconducting thin film changes, so that the total capacitance of the superconducting cavity changes, the frequency of the superconducting cavity changes, and then the frequency of photons in the superconducting cavity changes, so that phonons of the acoustic wave and photons in the superconducting cavity modulate and couple with each other, and further coupling between the superconducting cavity and the acoustic wave device is realized.

In the case where the medium between the superconducting cavity and the superconducting thin film is air,the size of the area of the superconducting cavity facing the superconducting thin film means an area of the superconducting thin film projected onto the superconducting cavity, where the projected area overlaps the superconducting cavity.

In order to further reduce the consumption of refrigeration power and space by the microwave source in the very low temperature region of the dilution refrigerator, according to yet another exemplary embodiment, the critical temperature of the superconducting material constituting the superconducting cavity and the superconducting thin film is greater than 4K. Because the acoustic wave device is made of piezoelectric materials, superconduction is not needed, and the superconducting cavity is made of superconducting materials with higher critical temperature, the manufactured microwave source can be placed in a temperature area with higher temperature of the dilution refrigerator, such as a 4K temperature area, compared with the problem that the on-chip integrated microwave source in the prior art needs to be placed in a 10mK temperature area of the dilution refrigerator, the consumption of refrigeration power and refrigeration space is larger, the dependence of the microwave source on the extremely low temperature area of the dilution refrigerator can be further reduced, and the consumption of the refrigeration power and the space on the extremely low temperature area of the dilution refrigerator by the microwave source is further reduced.

In addition, the thickness of the superconducting film is 100 nm-500 nm. The superconducting film in the thickness range is easy to strip or etch, and has high stability. The material of the superconducting thin film may be a superconducting material, which refers to a material that exhibits an electrical resistance equal to zero below a certain critical temperature and repels magnetic lines of force.

Niobium is the highest critical superconducting temperature in non-mixed superconducting materials, and at standard atmospheric pressure, the critical superconducting temperature is 9.2K (about-263.95 ℃). High quality niobium films are typically grown by sputtering processes, and currently superconducting cavities based on niobium films are widely used, with niobium film thicknesses typically around 100 nm.

Niobium-titanium (NbTi) superconducting alloy is the most widely used superconducting material for low temperature experiments at present, when the mass ratio of Nb to Ti is close to 1:1, the NbTi alloy has good superconducting performance, and the superconducting critical transition temperature Tc=9.5K is about.

In other embodiments, the material of the superconducting cavity may further include a superconducting material having a critical temperature greater than 4K, such as niobium.

Compared with the traditional room temperature measuring microwave source, the on-chip integrated microwave source has smaller volume and lower manufacturing cost, can be placed in a temperature region of a dilution refrigerator with the temperature being higher than 4K, and avoids occupation of ultralow temperature regions such as 10mK and the like in the dilution refrigerator.

According to another aspect of the present application, there is further provided a method for manufacturing a microwave source as described above, and fig. 2 is a flowchart of a method for manufacturing a microwave source according to an embodiment of the present application, as shown in fig. 2, where the flowchart includes the following steps:

step S102, providing the superconducting cavity 10 as shown in fig. 3;

Step S104, forming a supporting structure 12 on a part of the surface of the superconducting cavity 10 to obtain a structure shown in FIG. 4;

in particular, the support structure may be formed on a portion of the surface of the superconducting cavity by any suitable means, such as one or more of Molecular Beam Epitaxy (MBE), metal Organic Chemical Vapor Deposition (MOCVD), metal Organic Vapor Phase Epitaxy (MOVPE), hydride Vapor Phase Epitaxy (HVPE) and/or other known crystal growth processes, optionally with the material of the support structure comprising a deformable material to ensure that the support structure is deformable under acoustic waves. In particular, the above-mentioned support structure is constituted by a deformable material.

Step S106 of forming a superconducting thin film 11 on a portion of the surface of the support structure 12 remote from the superconducting cavity 10, as shown in fig. 7;

specifically, the superconducting thin film may be formed by Physical Vapor Deposition (PVD) such as evaporation, sputtering, and molecular beam epitaxy, chemical Vapor Deposition (CVD) such as Metal Organic Chemical Vapor Deposition (MOCVD) and vapor deposition (APCVD), or the like.

The superconducting film is a film with superconducting performance, and can realize superconducting at a relatively high temperature due to the fact that the superconducting film has a high critical temperature. The material of the superconducting thin film can be any suitable superconducting material with higher critical temperature, such as copper oxide, lanthanum barium copper oxide and the like. Optionally, the material of the superconducting thin film includes at least one of the following: barium copper oxygen, bismuth strontium calcium copper oxygen. More specifically, the superconducting thin film may be made of copper oxide.

Step S108, as shown in fig. 1 and 8, forms a multi-mode acoustic wave device 13 on the support structure 12.

Through the steps, a microwave source comprising a superconducting cavity, a superconducting film, a supporting structure between the superconducting cavity and the supporting structure and a multi-mode acoustic wave device on the supporting structure is formed, the superconducting cavity and the acoustic wave device are mutually coupled, acoustic waves are excited to propagate on the supporting structure through the acoustic wave device, the supporting structure drives the superconducting cavity and/or the superconducting film to move according to acoustic deformation, so that the distance between the superconducting cavity and the superconducting film is changed, the capacitance of the superconducting cavity is changed due to the change of the distance between the superconducting cavity and the superconducting film, the frequency of the superconducting cavity is changed, the modulation of the acoustic waves on optics is formed, and the effect of driving the acoustic wave device to generate microwave laser is achieved. Compared with the problem that the microwave signal source integrated on the chip in the prior art has larger refrigeration power and space consumption in the extremely low temperature region of the dilution refrigerator, the microwave source can be placed in the temperature region with higher temperature in the dilution refrigerator because the ultrasonic wave device in the microwave source does not need to be superconducting, thereby reducing the refrigeration power and space consumption in the extremely low temperature region of the dilution refrigerator.

The execution order of step S106 and step S108 may be interchanged, i.e., step S106 may be executed first and then step S108 may be executed.

In an alternative aspect of the present application, a multi-mode acoustic wave device is formed on the support structure, including: and forming a multi-mode surface acoustic wave device on the supporting structure. The acoustic surface wave device is used for converting an input electric signal into the acoustic surface wave through the inverse piezoelectric effect, so that the acoustic surface wave propagates along the surface of the supporting structure, and acoustic wave signals in different modes can be obtained by adjusting the size of the input electric signal, so that different microwave lasers are modulated. In addition, the surface acoustic wave device is driven by piezoelectricity, so that the efficiency of exciting the surface acoustic wave is high, and the requirement of generating and driving the microwave laser can be met; in addition, the radiation noise of the surface acoustic wave excited by the surface acoustic wave device is smaller, so that the noise or crosstalk of the surface acoustic wave device to the chip can be reduced; and the surface acoustic wave cannot be propagated in vacuum, is easy to be separated by physical separation, couples the surface acoustic wave device and the superconducting cavity to form an optomechanical system, and has small influence on the superconducting quantum chip when being placed in a higher temperature region of a dilution refrigerator by an integrated microwave source on a chip.

In addition to a multi-modal surface acoustic wave device, in yet another alternative embodiment of the present application, a multi-modal acoustic wave device is formed on the support structure, comprising: at least two single-mode sub-acoustic wave devices are formed on the supporting structure, and the basic frequencies of at least two sub-acoustic wave devices are different. In this embodiment, by setting at least two single-mode sub-acoustic wave devices with different fundamental frequencies, excitation of acoustic waves with different fundamental frequencies can be also realized, so as to form two supermodes, and further pumping of the acoustic waves to photons is realized through the two supermodes, so as to form microwave laser.

In another exemplary embodiment, forming a support structure on a portion of a surface of the superconducting cavity includes: as shown in fig. 4, at least two elastic supports 120 are formed on the surface of the superconducting cavity 10, and at least two elastic supports 120 are spaced apart. Specifically, the first ends of at least two of the elastic supports 120 are in contact with the surface of the superconducting cavity 10, and as shown in fig. 8, part of the surfaces of the second ends of at least two of the elastic supports 120 are in contact with the acoustic wave device 13, and part of the surfaces of the second ends of at least two of the elastic supports 120 are in contact with the superconducting thin film 11. The stable support of the superconducting thin film is realized through at least two elastic support posts, so that the distances between the superconducting cavity and each position of the superconducting thin film are basically consistent.

In one exemplary embodiment, a multi-modal acoustic wave device is formed on the support structure, comprising: and forming a sub-acoustic wave device on a part of the surface of each elastic pillar, which is far away from the superconducting cavity, wherein the basic frequencies of at least two sub-acoustic wave devices are different.

Optionally, the elastic support has two elastic support posts respectively contacting with upper surfaces of two ends of the superconducting cavity, and the support structure forms a multi-mode acoustic wave device, including: and forming single-mode surface acoustic wave devices on the surfaces of the elastic support columns, which are far away from the superconducting cavity, in a one-to-one correspondence manner. Of course, in addition to the two illustrated elastic struts, three, four, or even more elastic struts may be provided.

In the present application, the medium between the superconducting cavity and the superconducting thin film may be air, and when the medium between the superconducting cavity and the superconducting thin film is air, the flexible range of the elastic support is large, and the modulation range is also large. Of course, the medium between the superconducting cavity and the superconducting thin film can be other medium materials, and the skilled person can flexibly design according to actual needs. In order to further secure the device performance of the microwave source, specifically, forming a superconducting thin film on a portion of the surface of the support structure remote from the superconducting cavity, includes:

as shown in fig. 4 and 5, a dielectric layer 14 is formed on the exposed surface of the superconducting cavity 10, and the surface of the dielectric layer 14 away from the superconducting cavity 10 and the surface of the support structure 12 away from the superconducting cavity 10 are on the same plane;

forming the superconducting thin film 11 on the surface of the dielectric layer 14 away from the superconducting cavity 10 and the surface of the support structure 12 away from the superconducting cavity 10, to obtain a structure as shown in fig. 6;

the dielectric layer 14 is removed to obtain the structure shown in fig. 7.

In the above embodiment, the dielectric layer is filled between the supporting structure and the superconducting cavity, then the superconducting film is formed on the supporting structure and the dielectric layer, so that the superconducting film can be simply generated, and finally the dielectric layer with supporting function is removed, so that the larger deformation range of the supporting structure and the larger modulation range are ensured, and further the device performance of the microwave source is ensured.

Of course, the dielectric layer may also remain on the microwave source in order to further simplify the manufacturing process of the microwave source. One skilled in the art may select suitable materials for the dielectric layers described above, such as deformable materials, or other dielectric materials, etc.

In order to easily remove the dielectric layer, in some other embodiments, removing the dielectric layer includes: placing the device formed with the superconducting film in a reaction chamber; and introducing etching gas into the reaction chamber to etch and remove the dielectric layer.

More specifically, the material of the dielectric layer includes silicon dioxide, and the etching gas includes hydrogen fluoride gas. The silicon dioxide is selectively removed through the hydrogen fluoride gas, so that the removal process of the dielectric layer can be further simplified, and meanwhile, the removal effect of the dielectric layer is further guaranteed to be good.

From the description of the above embodiments, it will be clear to a person skilled in the art that the method according to the above embodiments may be implemented by means of software plus the necessary general hardware platform, but of course also by means of hardware, but in many cases the former is a preferred embodiment. Based on such understanding, the technical solution of the present application may be embodied essentially or in a part contributing to the prior art in the form of a software product stored in a storage medium (such as ROM/RAM, magnetic disk, optical disk) comprising several instructions for causing a terminal device (which may be a mobile phone, a computer, a server, or a network device, etc.) to perform the above-mentioned methods of the various embodiments of the present application.

According to still another aspect of the present application, there is also provided a microwave laser generating method of the microwave source, and fig. 9 is a flowchart of a microwave laser generating method of the microwave source according to an embodiment of the present application, as shown in fig. 9, the flowchart includes the steps of:

step S202, providing a driving voltage for the multi-mode acoustic wave device, so that the multi-mode acoustic wave device excites at least two fundamental frequency acoustic waves, and the at least two fundamental frequency acoustic waves are overlapped with each other to form a first super-mode and a second super-mode as shown in FIG. 10, wherein the energy level of the first super-mode is smaller than that of the second super-mode;

in step S204, phonons excited by the acoustic wave device transition between the first supermode and the second supermode to generate microwave laser light.

In the above embodiment, excitation of sound waves with different fundamental frequencies is achieved through the multi-mode sound wave device, the sound waves with different fundamental frequencies are mutually overlapped to form the first super-mode and the second super-mode, and pumping of the sound waves to photons is achieved through the two super-modes to form microwave laser, so that the effect of driving the sound wave device to generate microwave laser is achieved. Compared with the problem that the microwave signal source integrated on the chip in the prior art has larger refrigeration power and space consumption in the extremely low temperature region of the dilution refrigerator, the microwave source can be placed in the temperature region with higher temperature in the dilution refrigerator because the ultrasonic wave device in the microwave source does not need to be superconducting, thereby reducing the refrigeration power and space consumption in the extremely low temperature region of the dilution refrigerator.

In another exemplary embodiment, step S204: the specific implementation manner of the phonon excited by the acoustic wave device to generate the microwave laser by transition between the first supermode and the second supermode may be:

step S2041: the phonons transition from the second supermode to the first supermode to release photons into the superconducting cavity;

specifically, the difference in energy levels between the first and second supermodes is close to resonance with the energy level of a photon in the superconducting cavity, and a certain amount of photons are released when the phonon transitions from the second supermode at a high energy level to the first supermode at a low energy level.

Step S2042: the phonons transition from the first supermode to the second supermode to absorb the photons from the superconducting cavity;

specifically, in the case where the phonon transitions from a first supermode at a low energy level to a second supermode at a high energy level, a certain amount of photons are absorbed;

step S2043: in case the number of released photons is larger than the number of absorbed photons, a microwave laser is generated.

Specifically, when the acoustic wave driving is strong, the second supermode of the high energy level occupies a higher phonon amount than the first supermode of the low energy level, so that the emission of photons is more than the absorption of photons during phonon transition, and the optical mode has positive gain, so that the photon number is increased to form microwave laser.

In practical application, a person skilled in the art may select any suitable type of acoustic wave device, such as a surface acoustic wave device and a bulk acoustic wave device, and in an alternative aspect of the present application, the multimode acoustic wave device includes a multimode surface acoustic wave device, that is, a multimode surface acoustic wave device excites a multimode surface acoustic wave, and the multimode surface acoustic waves are overlapped with each other to form the first and second supermodes. The acoustic surface wave device is used for converting an input electric signal into the acoustic surface wave through the inverse piezoelectric effect, so that the acoustic surface wave propagates along the surface of the supporting structure, and acoustic wave signals in different modes can be obtained by adjusting the size of the input electric signal, so that different microwave lasers are modulated. In addition, the surface acoustic wave device is driven by piezoelectricity, so that the efficiency of exciting the surface acoustic wave is high, and the requirement of generating and driving the microwave laser can be met; in addition, the radiation noise of the surface acoustic wave excited by the surface acoustic wave device is smaller, so that the noise or crosstalk of the surface acoustic wave device to the chip can be reduced; and the surface acoustic wave cannot be propagated in vacuum, is easy to be separated by physical separation, couples the surface acoustic wave device and the superconducting cavity to form an optomechanical system, and has small influence on the superconducting quantum chip when being placed in a higher temperature region of a dilution refrigerator by an integrated microwave source on a chip.

In addition to a multi-modal surface acoustic wave device, in yet another alternative embodiment of the present application, the acoustic wave device may further include: and the basic frequencies of at least two single-mode sub-acoustic wave devices are different, namely, the at least two single-mode sub-acoustic wave devices excite to form two-mode acoustic waves, and the two-mode acoustic waves are mutually overlapped to form the first super-mode acoustic wave. In this embodiment, by setting at least two single-mode sub-acoustic wave devices with different fundamental frequencies, excitation of acoustic waves with different fundamental frequencies can be also realized, so as to form two supermodes, and further pumping of the acoustic waves to photons is realized through the two supermodes, so as to form microwave laser.

In some other embodiments, the multi-mode acoustic wave device is a dual-mode surface acoustic wave device, or two single-mode surface acoustic wave devices, step S202: providing a driving voltage to a multi-modal acoustic wave device such that the multi-modal acoustic wave device excites acoustic waves of at least two fundamental frequencies, comprising: and providing driving voltages to one of the two-mode surface acoustic wave devices or to two of the single-mode surface acoustic wave devices, so that the two-mode surface acoustic wave devices or the single-mode surface acoustic wave devices excite sound waves with two fundamental frequencies.

In an exemplary embodiment, as shown in fig. 1, the elastic support posts are two, and are respectively in contact with the upper surfaces of the two ends of the superconducting cavity, and the single-mode sub-acoustic wave devices are located on the elastic support posts in a one-to-one correspondence. On this basis, step S202: providing a driving voltage to a multi-modal acoustic wave device such that the multi-modal acoustic wave device excites acoustic waves of at least two fundamental frequencies, comprising: providing driving voltage for two single-mode surface acoustic wave devices, and exciting two fundamental frequency sound waves by the single-mode surface acoustic wave devices; the two fundamental frequency sound waves propagate on the corresponding elastic struts, so that the two elastic struts deform, and frequency modulation of the superconducting cavity is realized.

In the above embodiment, the surface acoustic wave device is used to convert the input electrical signal into the surface acoustic wave through the inverse piezoelectric effect, so that the surface acoustic wave propagates along the surface of the corresponding elastic support, and by adjusting the size of the input electrical signal, acoustic wave signals of different modes can be obtained, so as to generate photons of different frequencies, and further, microwave lasers of different frequencies can be modulated.

In the present application, the medium between the superconducting cavity and the superconducting thin film may be air, and when the medium between the superconducting cavity and the superconducting thin film is air, the flexible range of the elastic support is large, and the modulation range is also large. Of course, the medium between the superconducting cavity and the superconducting thin film can be other medium materials, and the skilled person can flexibly design according to actual needs.

Specifically, the material of the superconducting cavity may include a superconducting material having a critical temperature of greater than 4K, such as niobium.

Considering that the microwave source comprises two ultrasonic supermodes formed by superposition of two acoustic modes and one optical mode in a superconducting cavity, the Hamiltonian amount of the whole three-dimensional optical mechanical system is as follows:

，

Wherein H is the Ha Midu quantity,is about Planck constant +.>For the frequency corresponding to the second supermode,generating operators for said phonons of said second super-mode, +.>Is an annihilation operator of the phonon of the second super-mode, +.>For the frequency corresponding to said first supermode,/->Generating operators for said phonons of said first super-modality, +.>Is an annihilation operator of the phonon of the first super-mode, +.>For the frequency of the photons, +.>Generating operators for said photons, +.>For the lightAnnihilation operator of son->Is the coupling strength of the superconducting cavity and the acoustic wave device.

In particular, the method comprises the steps of,in particular a frequency ofIs used for the generation of one of the photons,in particular a frequency ofAnnihilation of one photon of (a).Indicating that a phonon absorbs a photon, transitions from a first supermode to a second supermodeIt means that a phonon releases a photon, transitioning from the second supermode to the first supermode.

Defining two acoustic supermodulo operatorsTherefore, the phonon motion equation and the photon motion equation of the microwave source are respectively:

，

wherein ,is->I is an imaginary number, i ² =-1，/>For the decay rate of the first and second supermode +. >For the optical Lagrangian operator, p is the phonon generation of the second super mode while annihilating the phonon of the first super mode,>is the derivative of p>For the attenuation rate of the optical mode in the superconducting cavity,/->Is an acoustic lagrangian operator.

In particular, the method comprises the steps of,is in the form of two acoustic supermodes, namely the first supermode and the second supermode have extremely poor energy, +.>The difference in phonon occupancy of the two acoustic supermodes is represented.

The acoustic supermode pumps the optical mode under the drive of the acoustic surface device. When the SAW drive is strong enough, the phonon occupancy number on the second super-mode is larger than that on the first super-mode, i.eThe number of photons released at this time is greater than the number of photons absorbed, so that the optical mode can obtain a positive gain that yields the gain of the microwave laser light:

。

similar to a conventional laser, a microwave laser is formed as the number of photons released during the ultrasonic mode transition increases.

In the above-mentioned superconductive quantum chip, the microwave source includes superconductive cavity, superconductive film, the bearing structure between them and the multimode acoustic wave device on the bearing structure, wherein, superconductive cavity and acoustic wave device are coupled each other, and the acoustic wave is transmitted on the above-mentioned bearing structure through the excitation of acoustic wave device, and above-mentioned bearing structure is according to the acoustic deformation, drives above-mentioned superconductive cavity and/or above-mentioned superconductive film and remove to change the distance between above-mentioned superconductive cavity and the above-mentioned superconductive film, the change of both distances makes the electric capacity change of above-mentioned superconductive cavity, and then makes the frequency change of superconductive cavity, has formed the modulation of acoustic wave to optics, has realized driving acoustic wave device and has produced microwave laser's effect. Compared with the problem that the microwave signal source integrated on the chip in the prior art has larger refrigeration power and space consumption in the extremely low temperature region of the dilution refrigerator, the microwave source can be placed in the temperature region with higher temperature in the dilution refrigerator because the ultrasonic wave device in the microwave source does not need to be superconducting, thereby reducing the refrigeration power and space consumption in the extremely low temperature region of the dilution refrigerator.

In addition, in the superconducting quantum chip, the microwave source is integrated on the substrate and can be placed in a higher temperature area, such as a 4K temperature area or even higher, of the dilution refrigerator, so that the volume of a measurement and control system of the superconducting quantum computer can be reduced, and the huge investment of the measurement and control system is reduced.

The material of the support structure comprises a deformable material, so that the support structure can deform under the action of sound waves. In particular, the above-mentioned support structure is constituted by a deformable material.

The acoustic wave device is an acoustic wave generating device, the multi-mode acoustic wave device can realize excitation of acoustic waves with different basic frequencies, the acoustic waves with different basic frequencies are mutually overlapped, two super modes can be formed, and pumping of the acoustic waves to photons is realized through the two super modes, so that microwave laser is formed.

In addition to a multi-modal surface acoustic wave device, in yet another alternative embodiment of the present application, the acoustic wave device may further include: at least two single-mode sub-acoustic wave devices, at least two of which have different fundamental frequencies. In this embodiment, by setting at least two single-mode sub-acoustic wave devices with different fundamental frequencies, excitation of acoustic waves with different fundamental frequencies can be also realized, so as to form two supermodes, and further pumping of the acoustic waves to photons is realized through the two supermodes, so as to form microwave laser.

It should be noted that each of the above modules may be implemented by software or hardware, and for the latter, it may be implemented by, but not limited to: the modules are all located in the same processor; alternatively, the above modules may be located in different processors in any combination.

Embodiments of the present application also provide a computer readable storage medium having a computer program stored therein, wherein the computer program is arranged to perform the steps of any of the method embodiments described above when run.

In one exemplary embodiment, the computer readable storage medium may include, but is not limited to: a usb disk, a Read-Only Memory (ROM), a random access Memory (Random Access Memory, RAM), a removable hard disk, a magnetic disk, or an optical disk, or other various media capable of storing a computer program.

An embodiment of the application also provides an electronic device comprising a memory having stored therein a computer program and a processor arranged to run the computer program to perform the steps of any of the method embodiments described above.

In an exemplary embodiment, the electronic device may further include a transmission device connected to the processor, and an input/output device connected to the processor.

Specific examples in this embodiment may refer to the examples described in the foregoing embodiments and the exemplary implementation, and this embodiment is not described herein.

It will be appreciated by those skilled in the art that the modules or steps of the application described above may be implemented in a general purpose computing device, they may be concentrated on a single computing device, or distributed across a network of computing devices, they may be implemented in program code executable by computing devices, so that they may be stored in a storage device for execution by computing devices, and in some cases, the steps shown or described may be performed in a different order than that shown or described herein, or they may be separately fabricated into individual integrated circuit modules, or multiple modules or steps of them may be fabricated into a single integrated circuit module. Thus, the present application is not limited to any specific combination of hardware and software.

The above description is only of the preferred embodiments of the present application and is not intended to limit the present application, but various modifications and variations can be made to the present application by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the principle of the present application should be included in the protection scope of the present application.

Claims

1. A microwave source, comprising:

A superconducting cavity;

the superconducting film is positioned at one side of the superconducting cavity;

a support structure located between the superconducting cavity and the superconducting thin film, and the support structure is respectively contacted with the superconducting cavity and the superconducting thin film;

the multi-mode acoustic wave device is positioned on the surface of the supporting structure and is used for exciting acoustic waves to propagate on the supporting structure so as to deform the supporting structure and drive the superconducting cavity and/or the superconducting film to move so as to realize the frequency adjustment of the superconducting cavity,

the support structure includes:

at least two elastic support posts, at least two elastic support posts are arranged at intervals, the first ends of at least two elastic support posts are in contact with the surface of the superconducting cavity, part of the surfaces of the second ends of at least two elastic support posts are in contact with the acoustic wave device, and part of the surfaces of the second ends of at least two elastic support posts are in contact with the superconducting thin film.

2. The microwave source of claim 1, wherein the acoustic wave device of multiple modes comprises a multi-mode surface acoustic wave device.

3. The microwave source of claim 1, wherein the microwave source further comprises:

And the dielectric layer is positioned between the superconducting cavity and the superconducting film.

4. A microwave source according to claim 3, wherein the dielectric layer has a dielectric constant of 3.9-11.3 and the buffered oxide etchant has an etch selectivity of 0.002-0.0026 for the superconducting cavity and the dielectric layer.

5. The microwave source according to any one of claims 1 to 4, wherein the acoustic wave device comprises:

at least two single-mode sub-acoustic wave devices, at least two of which have different fundamental frequencies.

6. The microwave source according to any one of claims 1 to 4, wherein the thickness of the superconducting thin film is 100nm to 500nm.

7. A microwave source according to any one of claims 1 to 4 wherein the superconducting cavity has a frequency of:

，/>，

8. The microwave source according to any one of claims 1 to 4, wherein a critical temperature of a superconducting material constituting the superconducting cavity and the superconducting thin film is greater than 4K.

9. A method of manufacturing a microwave source as claimed in any one of claims 1 to 8, comprising:

providing a superconducting cavity;

forming a support structure on a portion of a surface of the superconducting cavity;

forming a superconducting thin film on a portion of a surface of the support structure remote from the superconducting cavity;

a multi-modal acoustic wave device is formed on the support structure.

10. The method of claim 9, wherein forming a support structure on a portion of a surface of the superconducting cavity comprises:

at least two elastic struts are formed on the surface of the superconducting cavity, and the at least two elastic struts are arranged at intervals.

11. The method of manufacturing a microwave source according to claim 9, wherein forming a superconducting thin film on a portion of a surface of the support structure remote from the superconducting cavity comprises:

forming a dielectric layer on the exposed surface of the superconducting cavity, wherein the surface of the dielectric layer away from the superconducting cavity and the surface of the support structure away from the superconducting cavity are on the same plane;

Forming the superconducting thin film on the surface of the dielectric layer far away from the superconducting cavity and the surface of the supporting structure far away from the superconducting cavity;

and removing the dielectric layer.

12. The method of claim 11, wherein removing the dielectric layer comprises:

placing the device formed with the superconducting thin film in a reaction chamber;

and introducing etching gas into the reaction chamber to etch and remove the dielectric layer.

13. The method of claim 12, wherein the dielectric layer material comprises silicon dioxide and the etching gas comprises hydrogen fluoride gas.

14. The method of claim 10, wherein forming a multi-modal acoustic wave device on the support structure comprises:

and forming a sub-acoustic wave device on a part of the surface of each elastic pillar, which is far away from the superconducting cavity, wherein the basic frequencies of at least two sub-acoustic wave devices are different.

15. A microwave laser light generating method of a microwave source according to any one of claims 1 to 8, comprising:

providing driving voltage for a multi-mode acoustic wave device, so that the multi-mode acoustic wave device excites acoustic waves with at least two fundamental frequencies, the acoustic waves with at least two fundamental frequencies are mutually overlapped to form a first super-mode and a second super-mode, and the energy level of the first super-mode is smaller than that of the second super-mode;

Phonons excited by the acoustic wave device transition between the first and second supermodes to generate a microwave laser.

16. The method of generating microwave laser light of claim 15, wherein phonons excited by the acoustic wave device transition between the first and second supermodes to generate microwave laser light, comprising:

the phonons transition from the second supermode to the first supermode to release photons into the superconducting cavity;

the phonons transition from the first supermode to the second supermode to absorb the photons from the superconducting cavity;

in case the number of released photons is larger than the number of absorbed photons, a microwave laser is generated.

17. The method of claim 16, wherein the hamiltonian amount of the microwave source is:

，

wherein H is the Ha Midu quantity,is about Planck constant +.>For the frequency corresponding to said second supermode,/->Generating operators for said phonons of said second super-mode, +.>Is an annihilation operator of the phonon of the second super-mode, For the frequency corresponding to said first supermode,/->Generating operators for said phonons of said first super-modality, +.>Is an annihilation operator of the phonon of the first super-mode, +.>For the frequency of the photons, +.>Generating operators for said photons, +.>Is an annihilation operator of the photon, < >>Is the coupling strength of the superconducting cavity and the acoustic wave device.

18. The method for generating microwave laser light of a microwave source according to claim 17, wherein the phonon equation of motion and the photon equation of motion of the microwave source are respectively:

，

wherein ,is->I is an imaginary number, i ² =-1，/>For the decay rate of the first and second supermode +.>For the optical Lagrangian operator, p is the phonon generation of the second super mode while annihilating the phonon of the first super mode,>is the derivative of p>For the attenuation rate of the optical mode in the superconducting cavity,/->Is an acoustic lagrangian operator.

19. The method of generating microwave laser light of a microwave source according to claim 18, wherein in a case where the number of released photons is greater than the number of absorbed photons, a gain of the generated microwave laser light is:

，

wherein ,。

20. a superconducting quantum chip, comprising:

A microwave source, which is a microwave source according to any one of claims 1 to 8 or a microwave source manufactured by a manufacturing method of a microwave source according to any one of claims 9 to 14, and which generates a microwave laser by a microwave laser generating method of a microwave source according to any one of claims 15 to 19.