CN116678937A - Metal crack detection device and method - Google Patents
Metal crack detection device and method Download PDFInfo
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- CN116678937A CN116678937A CN202310850532.3A CN202310850532A CN116678937A CN 116678937 A CN116678937 A CN 116678937A CN 202310850532 A CN202310850532 A CN 202310850532A CN 116678937 A CN116678937 A CN 116678937A
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Abstract
The application discloses a metal crack detection device and a metal crack detection method, wherein the device comprises a dielectric substrate, a microstrip transmission line, a transition zone and a resonance unit group, wherein resonance units in the resonance unit group are distributed at equal intervals in period, the generated electromagnetic field has the characteristic of concentration and uniformity, and the transition zone can generate artificial surface plasma laser waves to highly restrict the electromagnetic field to the surface of a metal sample to be detected, so that the electromagnetic field is concentrated and uniformly distributed around the microstrip transmission line, insensitivity to the metal crack position is realized, and the accuracy of metal crack detection is improved.
Description
Technical Field
The application relates to the technical field of metal crack detection, in particular to a metal crack detection device and method.
Background
The metal material is widely applied to various fields such as railway traffic, aerospace, industrial production and the like. However, the metal working in extremely severe environment for a long time is easy to generate tiny cracks so as to influence the performance of the product, and serious engineering accidents, casualties or huge economic losses can be caused, so that the metal cracks are necessary to be detected so as to discover and repair the cracks timely and accurately.
At present, the traditional nondestructive testing technology aiming at metal crack detection comprises optical fiber detection, ultrasonic detection, acoustic emission detection, pulse eddy current detection and the like, but has some defects: for example, the optical fiber detection can only monitor a specific area, is easily influenced by environmental factors, and has high cost; ultrasonic detection cannot detect elements with complex shapes and rough surfaces; the acoustic emission detection is easy to influence the detection effect by the surrounding noise environment, and the detection device is required to be tightly pressed on the element to be detected; the apparatus for pulsed eddy current detection is too cumbersome and costly.
Compared with the traditional nondestructive testing technology, the resonance testing technology has the advantages of simple structure, low testing cost, low operation environment requirement and the like. However, the existing resonant metal crack detection device still has the defect of sensitivity to detection positions, and the detection can be performed only when the metal crack is positioned at the resonant unit, so that the detection omission phenomenon is easy to occur, and the accuracy of the metal crack detection is poor.
Disclosure of Invention
The application provides a metal crack detection device and a metal crack detection method, which solve the technical problem of poor accuracy of metal crack detection at present.
The first aspect of the present application provides a metal crack detection device comprising: the device comprises a dielectric substrate, a microstrip transmission line, a resonance unit group and a transition zone;
the microstrip transmission line, the resonance unit group and the transition zone are arranged on the surface of the dielectric substrate;
the microstrip transmission line comprises a first feed port, a first transition transmission band, a second transition transmission band and a second feed port which are sequentially arranged;
the resonance unit group comprises a plurality of resonance units; the resonance units are respectively connected with the transmission belt and are periodically distributed on the side edge of the transmission belt at equal intervals;
the transition belt comprises a plurality of transition units which are connected with the side edges of the first transition transmission belt and the second transition transmission belt, have different widths and different depths.
Optionally, the resonance unit includes a resonance patch and a resonance branch, and the resonance patch is connected with the transmission belt through the resonance branch.
Optionally, the plurality of transition units are equidistantly distributed on the sides of the first transition conveyor belt and the second transition conveyor belt;
the width and depth of the transition units increase one by one along the first transition transmission band from the first feed port and increase one by one along the second transition transmission band from the second feed port.
Optionally, the plurality of transition units are distributed equidistantly, and the width and depth of the transition units from the feed port to one end of the resonance unit group are increased one by one.
Optionally, a plurality of the resonance units are distributed on one side of the transmission belt.
Optionally, a plurality of the resonance units are distributed on two sides of the transmission belt.
Optionally, the resonant units on both sides of the transmission belt are aligned.
Optionally, the resonant cells on both sides of the transmission belt are not aligned.
Optionally, the dielectric substrate is made of a flexible insulating material.
The second aspect of the present application provides a metal crack detection method based on the metal crack detection device described in any one of the above, comprising:
placing the metal crack detection device on a detection position of a metal sample to be detected, enabling energy to enter from a feed port of the metal crack detection device, generating artificial surface plasma excitation waves through a transition zone of the metal crack detection device to locally locate a field on the surface of the metal sample to be detected, generating a uniform field through a microstrip transmission line of the metal crack detection device, and exciting a resonance unit group of the metal crack detection device to generate a low-pass frequency band;
the first feed port and the second feed port of the metal crack detection device are respectively connected with a network analyzer through coaxial cables, and forward transmission coefficients of the detection positions in a plurality of low-pass frequency bands are collected;
and calculating the average value of the forward transmission coefficient, and representing the crack characteristics of the metal sample to be detected at the detection position according to the average value.
From the above technical scheme, the application has the following advantages:
the application discloses a metal crack detection device and a metal crack detection method, wherein the device comprises a dielectric substrate, a microstrip transmission line, a transition zone and a resonance unit group, wherein resonance units in the resonance unit group are distributed at equal intervals in period, the generated electromagnetic field has the characteristic of concentration and uniformity, and the transition zone can generate artificial surface plasma laser waves to highly restrict the electromagnetic field to the surface of a metal sample to be detected, so that the electromagnetic field is concentrated and uniformly distributed around the microstrip transmission line, insensitivity to the metal crack position is realized, and the accuracy of metal crack detection is improved.
Drawings
In order to more clearly illustrate the embodiments of the application or the technical solutions of the prior art, the drawings which are used in the description of the embodiments or the prior art will be briefly described, it being obvious that the drawings in the description below are only some embodiments of the application, and that other drawings can be obtained from these drawings without inventive faculty for a person skilled in the art.
Fig. 1 is a schematic top view of a metal crack detecting device according to a first embodiment of the present application;
fig. 2 is a schematic perspective view of a metal crack detecting device according to a first embodiment of the present application;
FIG. 3 is a schematic view of a metal crack detection device according to an embodiment of the present application;
FIG. 4 is a graph showing the relationship between the average value of forward transmission coefficients in a low-pass band of a metal sample to be tested and the variation of crack depth under different crack positions according to an embodiment of the present application;
FIG. 5 is a graph showing the relationship between the average value of forward transmission coefficients in a low-pass band of a metal sample to be tested and the variation of crack depth under different crack positions according to the embodiment of the present application;
fig. 6 is a flowchart illustrating steps of a metal crack detection method according to a second embodiment of the present application.
Detailed Description
The embodiment of the application provides a metal crack detection device and a metal crack detection method, which are used for solving the technical problem that the existing metal crack detection accuracy is poor.
In order to make the objects, features and advantages of the present application more comprehensible, the technical solutions in the embodiments of the present application are described in detail below with reference to the accompanying drawings, and it is apparent that the embodiments described below are only some embodiments of the present application, but not all embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
In the description of the present application, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Unless specifically stated or limited otherwise, the terms "mounted," "connected," and "coupled" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present application will be understood in specific cases by those of ordinary skill in the art.
Referring to fig. 1 to 2, fig. 1 is a schematic top view illustrating a structure of a metal crack detection device according to a first embodiment of the present application, and fig. 2 is a schematic perspective view illustrating a metal crack detection device according to a first embodiment of the present application.
The first embodiment of the application provides a metal crack detection device, which comprises: a dielectric substrate 1, a microstrip transmission line 2, a resonance unit group 3 and a transition zone 4;
the microstrip transmission line 2, the resonance unit group 3 and the transition zone 4 are arranged on the surface of the dielectric substrate 1;
the microstrip transmission line 2 comprises a first feed port 21, a first transition transmission band 22, a transmission band 23, a second transition transmission band 24 and a second feed port 25 which are sequentially arranged;
the resonance unit group 3 includes a plurality of resonance units; the resonance units are respectively connected with the transmission belt 23 and are periodically distributed on the side edge of the transmission belt 23 at equal intervals;
the transition zone 4 includes a plurality of transition units of different widths and different depths that are connected to the sides of the first transition zone 22 and the second transition zone 24.
In this embodiment, the dielectric substrate 1, the microstrip transmission line 2, the transition band 4, and the resonance unit group 3 together form an artificial surface plasmon structure. Artificial surface plasmons (Spoof Surface Plasmon Polaritons, SSPP) are an expansion of surface plasmons (Surface Plasmon Polaritons, SPP) in the low-pass band. When electromagnetic waves are incident on the interface between the metal and the dielectric medium, free electrons on the metal surface generate collective oscillation, near-field electromagnetic waves which are formed by coupling the electromagnetic waves and the free electrons on the metal surface and propagate along the metal surface generate resonance if the oscillation frequency of the electrons is consistent with the frequency of the incident electromagnetic waves, and the energy of the electromagnetic field is effectively converted into collective vibration energy of the free electrons on the metal surface in the resonance state to form surface plasmons.
It can be understood that in practical application, when the metal crack detection device provided in this embodiment is placed on a metal sample to be tested, the dielectric substrate 1 is not provided with the microstrip transmission line 2, the transition zone 4, and the other surface of the resonance unit group 3 to be in contact with the surface of the metal sample to be tested, and since the first feeding port 21 and the second feeding port 25 of the microstrip transmission line 2 are located at the edge of the dielectric substrate, the first feeding port 21 and the second feeding port 25 are in contact with the metal sample to be tested. After the metal crack detection device is placed on the detection position of the metal sample to be detected, energy enters the microstrip transmission line 2 from the first feed port 21 or the second feed port 25, artificial surface plasma excitation waves are generated on the transition zone 4 to localize an electromagnetic field on the surface of the metal sample to be detected, a uniform electromagnetic field is generated around the microstrip transmission line 2, and the resonance unit group 3 is excited to generate a low-pass frequency band.
When a crack exists at a detection position where the metal crack detection device is located, a phenomenon of ripple occurs in a low pass band range, and as the crack becomes deeper or the crack width becomes larger, the ripple characteristic becomes more obvious. Whereas the ripple characteristic may be characterized by the forward transmission coefficient S21 detected by the network analyzer, whereby the average value of the forward transmission coefficients in the low-pass band may be used to characterize the crack characteristic at the detection location. Referring to fig. 3 to 5, fig. 3 is a schematic enlarged view of a part of a metal crack detection device according to a first embodiment of the present application when detecting a crack, where py is a position of a crack edge from a center of the metal crack detection device, cw is a crack width, and cd is a crack depth; fig. 4 is a graph showing the relationship between the average forward transmission coefficient value in the low-pass band and the change of the crack depth of the metal sample to be tested under different crack positions, wherein the relationship between the average forward transmission coefficient value (mean (dB (S (2, 1))) of the vertical axis in the graph and the average forward transmission coefficient value (y= -5 mm) is shown, the step is 1mm, and the crack depth is different from the crack depth (cd=0-3 mm) under the condition that the crack width is 1mm, and the step is 1 mm; fig. 5 is a graph showing the relationship between the average forward transmission coefficient value in the low-pass band and the change of the crack depth of the metal sample to be tested in different crack positions, wherein the relationship between the average forward transmission coefficient value (mean (dB (S (2, 1))) of the vertical axis in the graph and the average forward transmission coefficient value (py= -5 mm) is shown, the step is 1mm, and the crack width is 1mm in the case of 1mm of the crack depth and the step is 1mm in the case of 1mm of the crack depth; as can be seen from fig. 4 and fig. 5, at a certain crack width and crack position, as the crack depth increases, the average value of the forward transmission coefficients in the low-pass band increases, so that the average value of the forward transmission coefficients in the low-pass band can be used to characterize the crack at the detection position.
The dielectric substrate 1 may be made of any insulating material capable of being electrically polarized. Because the metal crack detection device provided by the embodiment is characterized by the ripple characteristics according to the low-pass frequency band, the mounting position of the resonant element is insensitive, and the detection performance of the device is not affected by bending the dielectric substrate, the flexible insulating material which can be electrically polarized and has a thinner thickness is preferably adopted, so that the metal crack detection device can be bent along with the appearance of the metal sample to be detected, and the conformal function with the metal sample to be detected is realized. Furthermore, polyimide (PI) can be used to prepare the dielectric substrate 1, and the Polyimide substrate has the characteristics of light weight, thin thickness, good flexibility, and the like.
The resonance units of the resonance unit group 3 may be disposed at one side of the transmission belt 23 or at both sides of the transmission belt 23. When the resonance units are disposed on both sides of the transmission belt 23, the resonance units on both sides may be aligned, i.e., the resonance units on one side of the transmission belt 23 are aligned with the resonance units on the other side of the transmission belt 23; the resonant cells on both sides may also be in a non-aligned distribution, i.e. the resonant cells on one side of the transmission belt 23 are not aligned with the resonant cells on the other side of the transmission belt 23. The non-alignment distribution of the resonance units at two sides can compensate the magnetic field of the resonance units, the magnetic field distribution generated by the alignment distribution is more uniform, and the sensitivity of the detection device can be improved.
The number of the resonance units in the resonance unit group 3 can be adjusted according to actual and application requirements, and accordingly, the detection coverage area which can be finally realized by the device can be changed along with the number of the resonance units, so that metal crack detection in a larger area range can be realized.
The electromagnetic field generated by the periodically equidistant distributed resonance units in the resonance unit group 3 has the characteristic of concentration and uniformity, and the electromagnetic field can be more concentrated and uniformly distributed around the microstrip transmission line 2 by combining the binding local characteristics of the artificial surface plasma laser wave generated by the transition zone 4 to the electromagnetic field, so that the insensitivity of the metal crack detection device to the crack detection position is realized, and the accuracy of metal crack detection is improved.
The transition units and the resonance units are arranged on the same side of the microstrip transmission line 2, and the transition units with different depths and different widths can adjust the matching effect with the input impedance. Preferably, a plurality of transition units are equidistantly distributed on the sides of the first transition transmission belt 22 and the second transition transmission belt 24, the width and depth of the transition units increase one by one along the first transition transmission belt 22 from the first feed port 21, increase one by one along the second transition transmission belt 24 from the second feed port 25, and the largest transition unit is not larger than the resonance unit, so as to achieve a better impedance matching effect.
In a preferred embodiment, the transition unit comprises a transition patch and a transition leg, the transition patch being connected to the conveyor belt 23 by the transition leg; the transition patches of the plurality of transition units respectively have different widths, and the transition branches of the plurality of transition units respectively have different depths. Accordingly, the width and the depth of the transition unit increase one by one along the first transition transmission band from the first feed port, and increase one by one along the second transition transmission band from the second feed port, namely, the width of the transition patch of the transition unit and the depth of the transition branch of the transition unit increase one by one along the first transition transmission band from the first feed port, and increase one by one along the second transition transmission band from the second feed port.
In a preferred embodiment, the resonant cells of the set of resonant cells 3 comprise resonant patches and resonant stubs, the resonant patches being connected to microstrip transmission lines by the resonant stubs. Correspondingly, the resonant units can be arranged on one side or two sides of the transmission belt 23, and when the resonant units are arranged on two sides of the transmission belt 23, the resonant units on the two sides can be aligned, i.e. the resonant patches of the resonant units on one side of the transmission belt 23 are aligned with the resonant patches of the resonant units on the other side of the transmission belt 23; the resonant cells on both sides may be in a non-aligned distribution, i.e. the resonant patches of the resonant cells on one side of the transmission belt 23 are not aligned with the resonant patches of the resonant cells on the other side of the transmission belt 23.
The embodiment of the application discloses a metal crack detection device and a metal crack detection method, wherein the device comprises a dielectric substrate 1, a microstrip transmission line 2, a transition zone 4 and a resonance unit group 3, wherein resonance units in the resonance unit group 3 are distributed at equal intervals in period, the generated electromagnetic field has the characteristic of concentration and uniformity, and the transition zone 4 can generate artificial surface plasma laser waves to highly restrict the electromagnetic field on the surface of a metal sample to be detected, so that the electromagnetic field is concentrated and uniformly distributed around the microstrip transmission line, insensitivity to the metal crack position is realized, and the accuracy of metal crack detection is improved.
Referring to fig. 6, fig. 6 is a flowchart illustrating a metal crack detection method according to a second embodiment of the present application. The second embodiment of the present application provides a metal crack detection method based on the metal crack detection device provided in the foregoing embodiment, including:
and 601, placing the metal crack detection device on a detection position of a metal sample to be detected, enabling energy to enter from a feed port of the metal crack detection device, generating artificial surface plasma laser waves through a transition zone of the metal crack detection device to locally locate a field on the surface of the metal sample to be detected, generating a uniform field through a microstrip transmission line of the metal crack detection device, and exciting a resonance unit group of the metal crack detection device to generate a low-pass frequency band.
Step 602, a first feed port and a second feed port of the metal crack detection device are respectively connected with a network analyzer through coaxial cables, and forward transmission coefficients of detection positions in a plurality of low-pass frequency bands are collected.
And 603, calculating an average value of the forward transmission coefficients, and representing crack characteristics of the metal sample to be detected at the detection position according to the average value.
It can be appreciated that moving the position of the metal crack detection device on the metal sample to be detected can detect the crack characteristics of all positions of the metal sample to be detected.
It will be clear to those skilled in the art that, for convenience and brevity of description, the specific implementation principles of the method described above may refer to the corresponding implementation principles in the foregoing apparatus embodiments, which are not described herein again.
In the several embodiments provided in the present application, it should be understood that the disclosed systems, devices, and methods may be implemented in other manners. For example, the apparatus embodiments described above are merely illustrative, e.g., the division of the units is merely a logical function division, and there may be additional divisions when actually implemented, e.g., multiple units or components may be combined or integrated into another system, or some features may be omitted or not performed. Alternatively, the coupling or direct coupling or communication connection shown or discussed with each other may be an indirect coupling or communication connection via some interfaces, devices or units, which may be in electrical, mechanical or other form.
The units described as separate units may or may not be physically separate, and units shown as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.
In addition, each functional unit in the embodiments of the present application may be integrated in one processing unit, or each unit may exist alone physically, or two or more units may be integrated in one unit. The integrated units may be implemented in hardware or in software functional units.
The integrated units, if implemented in the form of software functional units and sold or used as stand-alone products, may be stored in a computer readable storage medium. Based on such understanding, the technical solution of the present application may be embodied essentially or in part or all of the technical solution or in part in the form of a software product stored in a storage medium, including instructions for causing a computer device (which may be a personal computer, a server, or a network device, etc.) to perform all or part of the steps of the method according to the embodiments of the present application. And the aforementioned storage medium includes: a U-disk, a removable hard disk, a Read-Only Memory (ROM), a random access Memory (RAM, random Access Memory), a magnetic disk, or an optical disk, or other various media capable of storing program codes.
The above embodiments are only for illustrating the technical solution of the present application, and not for limiting the same; although the application has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present application.
Claims (10)
1. A metal crack detection device, comprising: the device comprises a dielectric substrate, a microstrip transmission line, a resonance unit group and a transition zone;
the microstrip transmission line, the resonance unit group and the transition zone are arranged on the surface of the dielectric substrate;
the microstrip transmission line comprises a first feed port, a first transition transmission band, a second transition transmission band and a second feed port which are sequentially arranged;
the resonance unit group comprises a plurality of resonance units; the resonance units are respectively connected with the transmission belt and are periodically distributed on the side edge of the transmission belt at equal intervals;
the transition belt comprises a plurality of transition units which are connected with the side edges of the first transition transmission belt and the second transition transmission belt, have different widths and different depths.
2. The metal crack detection device of claim 1, wherein the resonant unit includes a resonant patch and a resonant stub, the resonant patch being connected to the transmission belt by the resonant stub.
3. The metal crack detection device of claim 1, wherein a plurality of the transition units are equidistantly distributed on the sides of the first transition conveyor and the second transition conveyor;
the width and depth of the transition units increase one by one along the first transition transmission band from the first feed port and increase one by one along the second transition transmission band from the second feed port.
4. A metal crack detection device as claimed in claim 1 or 3, characterized in that the transition unit comprises a transition patch and a transition branch, the transition patch being connected to the microstrip transmission line by the transition branch;
the transition patches of the transition units are respectively provided with different widths, and the transition branches of the transition units are respectively provided with different depths.
5. The metal crack detection device as claimed in claim 1 or 2, characterized in that a plurality of the resonance units are distributed on the side of the transmission belt.
6. The metal crack detection device as claimed in claim 1 or 2, characterized in that a plurality of the resonance units are distributed on both sides of the transmission belt.
7. The metal crack detection device of claim 6, wherein the resonant cells on both sides of the conveyor belt are aligned.
8. The metal crack detection device of claim 6, wherein the resonant cells on both sides of the conveyor belt are non-aligned.
9. The metal crack detection device of claim 1, wherein the dielectric substrate is made of a flexible insulating material.
10. A metal crack detection method based on the metal crack detection device as claimed in claims 1 to 9, characterized by comprising:
placing the metal crack detection device on a detection position of a metal sample to be detected, enabling energy to enter from a feed port of the metal crack detection device, generating artificial surface plasma excitation waves through a transition zone of the metal crack detection device to locally locate a field on the surface of the metal sample to be detected, generating a uniform field through a microstrip transmission line of the metal crack detection device, and exciting a resonance unit group of the metal crack detection device to generate a low-pass frequency band;
the first feed port and the second feed port of the metal crack detection device are respectively connected with a network analyzer through coaxial cables, and forward transmission coefficients of the detection positions in a plurality of low-pass frequency bands are collected;
and calculating the average value of the forward transmission coefficient, and representing the crack characteristics of the metal sample to be detected at the detection position according to the average value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310850532.3A CN116678937A (en) | 2023-07-11 | 2023-07-11 | Metal crack detection device and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310850532.3A CN116678937A (en) | 2023-07-11 | 2023-07-11 | Metal crack detection device and method |
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| Publication Number | Publication Date |
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| CN116678937A true CN116678937A (en) | 2023-09-01 |
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| CN202310850532.3A Pending CN116678937A (en) | 2023-07-11 | 2023-07-11 | Metal crack detection device and method |
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