CN116675990A - Photosensitive resin containing hollow microsphere wave absorber for 3D printing - Google Patents
Photosensitive resin containing hollow microsphere wave absorber for 3D printing Download PDFInfo
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- CN116675990A CN116675990A CN202310661595.4A CN202310661595A CN116675990A CN 116675990 A CN116675990 A CN 116675990A CN 202310661595 A CN202310661595 A CN 202310661595A CN 116675990 A CN116675990 A CN 116675990A
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- Prior art keywords
- wave absorber
- hollow
- photosensitive resin
- hollow microsphere
- nano metal
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- 239000006096 absorbing agent Substances 0.000 title claims abstract description 73
- 239000011347 resin Substances 0.000 title claims abstract description 44
- 229920005989 resin Polymers 0.000 title claims abstract description 44
- 239000004005 microsphere Substances 0.000 title claims abstract description 35
- 238000010146 3D printing Methods 0.000 title claims abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 239000011248 coating agent Substances 0.000 claims abstract description 22
- 238000000576 coating method Methods 0.000 claims abstract description 22
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 20
- 240000004808 Saccharomyces cerevisiae Species 0.000 claims abstract description 14
- 230000000694 effects Effects 0.000 claims abstract description 13
- 238000007781 pre-processing Methods 0.000 claims abstract description 7
- 238000003756 stirring Methods 0.000 claims abstract description 7
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000002360 preparation method Methods 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 241000235342 Saccharomycetes Species 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 9
- -1 hypophosphite-nickel chloride Chemical compound 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 9
- CBWDURFGJHLQRJ-FAOVPRGRSA-N silver (2R,3S,4R,5R)-2,3,4,5,6-pentahydroxyhexanal nitrate Chemical compound [N+](=O)([O-])[O-].[Ag+].O=C[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO CBWDURFGJHLQRJ-FAOVPRGRSA-N 0.000 claims description 9
- 229910052708 sodium Inorganic materials 0.000 claims description 9
- 239000011734 sodium Substances 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 206010070834 Sensitisation Diseases 0.000 claims description 6
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 6
- 239000004964 aerogel Substances 0.000 claims description 6
- 239000012043 crude product Substances 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 6
- 239000002243 precursor Substances 0.000 claims description 6
- 239000000047 product Substances 0.000 claims description 6
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 claims description 6
- 230000008313 sensitization Effects 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 239000004966 Carbon aerogel Substances 0.000 claims description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- 230000004913 activation Effects 0.000 claims description 3
- 238000001354 calcination Methods 0.000 claims description 3
- 238000006555 catalytic reaction Methods 0.000 claims description 3
- 239000008098 formaldehyde solution Substances 0.000 claims description 3
- 238000003837 high-temperature calcination Methods 0.000 claims description 3
- 230000001788 irregular Effects 0.000 claims description 3
- 238000006722 reduction reaction Methods 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 230000005389 magnetism Effects 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 239000011358 absorbing material Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K9/00—Use of pretreated ingredients
- C08K9/10—Encapsulated ingredients
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y70/00—Materials specially adapted for additive manufacturing
- B33Y70/10—Composites of different types of material, e.g. mixtures of ceramics and polymers or mixtures of metals and biomaterials
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K7/00—Use of ingredients characterised by shape
- C08K7/22—Expanded, porous or hollow particles
- C08K7/24—Expanded, porous or hollow particles inorganic
- C08K7/26—Silicon- containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K9/00—Use of pretreated ingredients
- C08K9/02—Ingredients treated with inorganic substances
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/25—Process efficiency
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Civil Engineering (AREA)
- Composite Materials (AREA)
- Structural Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
Abstract
The invention relates to the technical field of 3D printing, and discloses a 3D printing photosensitive resin containing a hollow microsphere wave absorber, which comprises a wave absorbing photosensitive resin, wherein the wave absorbing photosensitive resin is a photosensitive resin added with the hollow microsphere wave absorber, and the preparation method of the hollow microsphere wave absorber comprises the following steps: s1, constructing a silicon carbide hollow sphere, wherein the S1 comprises the following steps: s11, selecting high-activity dry yeast as a soft template, and preprocessing the dry yeast to recover the activity of the yeast; s12, adding ethyl orthosilicate into the yeast with recovered activity in a weak alkaline environment, and stirring. The 3D printing photosensitive resin containing the hollow microsphere wave absorber can effectively reduce the density of the wave absorber and improve the radar wave absorptivity of the wave absorber by adopting the hollow microsphere wave absorber, and can calculate the electromagnetic parameters of the hollow microsphere wave absorber according to the densities of the wave absorber and the photosensitive resin, and a nano metal coating is prepared on the surface of the hollow wave absorber to adjust the electromagnetic parameters of the hollow wave absorber.
Description
Technical Field
The invention relates to the technical field of 3D printing, in particular to a photosensitive resin containing a hollow microsphere wave absorber for 3D printing.
Background
At present, the 3D printing process can only produce planar targets under most conditions, is difficult to produce large-size three-dimensional targets, and greatly limits the application and popularization of the three-dimensional targets. The main reason is that the density difference between the wave absorbing agent and the photosensitive resin is too large, so that the wave absorbing agent is easy to generate precipitation, the fluidity of the photosensitive resin is further affected, and finally the 3D printing process is failed. This phenomenon is particularly remarkable for a magnetic loss type absorber and a dielectric type electric loss absorber having a large density.
In view of the above, the present invention provides a photosensitive resin for 3D printing containing a hollow microsphere wave absorber.
Disclosure of Invention
(one) solving the technical problems
Aiming at the defects of the prior art, the invention provides the photosensitive resin for 3D printing containing the hollow microsphere wave absorber, which has the advantages of reducing the density of the wave absorber, improving the radar wave absorptivity of the wave absorber and the like, and solves the problems that the density difference between the wave absorber and the photosensitive resin is too large, so that the wave absorber is easy to precipitate and the fluidity of the photosensitive resin is affected.
(II) technical scheme
In order to achieve the purposes of reducing the density of the wave absorber and improving the radar wave absorptivity of the wave absorber, the invention provides the following technical scheme:
the 3D printing photosensitive resin containing the hollow microsphere wave absorber comprises a wave absorbing photosensitive resin, wherein the wave absorbing photosensitive resin is a photosensitive resin added with the hollow microsphere wave absorber, and the preparation method of the hollow microsphere wave absorber comprises the following steps of:
s1, constructing a silicon carbide hollow sphere, wherein the S1 comprises the following steps:
s11, selecting high-activity dry yeast as a soft template, and preprocessing the dry yeast to recover the activity of the yeast;
s12, adding ethyl orthosilicate into saccharomycetes with recovered activity in a weak alkaline environment, and stirring;
s13, after stirring is completed, performing high-temperature calcination to remove internal substances of saccharomycetes, and obtaining a hollow silica template with saccharomycetes morphology;
s14, forming carbon aerogel by the hollow silicon dioxide template and a proper amount of resorcinol and formaldehyde solution under the catalysis of sodium carbonate;
s15, calcining the aerogel at a high temperature in an inert atmosphere to carbonize the aerogel to obtain a precursor of the carbon source coated hollow silica template;
s16, placing a precursor of the carbon source coated hollow silica template in an inert atmosphere for carbothermic reduction reaction to obtain a crude product;
s17, performing carbon removal and acid washing treatment on the crude product to obtain a silicon carbide hollow sphere with a saccharomycete shape;
s2, preparing a nano metal coating, wherein the S2 comprises the following steps:
s21, preprocessing the silicon carbide hollow spheres;
s22, carrying out nano metal coating on the surface of the silicon carbide hollow sphere by using a sodium hypophosphite-nickel chloride system or a glucose-silver nitrate system to obtain the hollow microsphere wave absorber.
Preferably, when the nano metal plating is performed by the sodium hypophosphite-nickel chloride system in the step S22, the pretreatment in the step S21 is a sensitization treatment and an activation treatment.
Preferably, when the nano metal plating is performed by using the sodium hypophosphite-nickel chloride system in the S22, the nano metal plating is performed in an alkaline environment at 70 ℃, and the product is specifically hollow silicon carbide coated by nano nickel particles.
Preferably, when the nano metal coating is performed by using a glucose-silver nitrate system in S22, the pretreatment in S21 is a sensitization treatment.
Preferably, when the nano metal coating is performed by using the glucose-silver nitrate system in S22, the nano metal coating is performed in an alkaline environment at 30 ℃, and the product is specifically irregular block-shaped hollow silicon carbide coated by nano silver particles.
(III) beneficial effects
Compared with the prior art, the invention provides the photosensitive resin containing the hollow microsphere wave absorber for 3D printing, which has the following beneficial effects:
the 3D printing photosensitive resin containing the hollow microsphere wave absorber can effectively reduce the density of the wave absorber by adopting the hollow microsphere wave absorber, greatly improve the radar wave absorptivity of the wave absorber, solve the problem that the density difference between the traditional wave absorber and photosensitive resin is overlarge, cause the wave absorber to produce precipitation, further influence the fluidity of the photosensitive resin, finally cause the failure of a 3D printing process, ensure the practicability of the photosensitive resin, and calculate the electromagnetic parameters of the hollow microsphere wave absorber according to the densities of the wave absorber and the photosensitive resin, prepare a nano metal coating on the surface of the hollow wave absorber to adjust the electromagnetic parameters of the hollow wave absorber, thereby further improving the practicability of the photosensitive resin.
Detailed Description
The technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the embodiments of the present invention, and it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Examples: the method for preparing the hollow microsphere wave absorber comprises the steps of adding the prepared hollow microsphere wave absorber into the photosensitive resin to prepare the wave-absorbing photosensitive resin, adding the prepared hollow microsphere wave absorber into a resin tank of a photo-curing type 3D printer when in use, and setting appropriate technological parameters to prepare the structural wave-absorbing material, wherein the preparation method of the hollow microsphere wave absorber comprises the following steps:
s1, constructing a silicon carbide hollow sphere, wherein S1 comprises the following steps:
s11, selecting high-activity dry yeast as a soft template, and preprocessing the dry yeast to ensure that the yeast has activity recovery, wherein the technology of the activity recovery of the dry yeast is mature and is not described in detail;
s12, adding ethyl orthosilicate into saccharomycetes with recovered activity in a weak alkaline environment, and stirring;
s13, after stirring is completed, performing high-temperature calcination to remove internal substances of saccharomycetes, and obtaining a hollow silica template with saccharomycetes morphology;
s14, forming carbon aerogel by the hollow silicon dioxide template and a proper amount of resorcinol and formaldehyde solution under the catalysis of sodium carbonate;
s15, calcining the aerogel at a high temperature in an inert atmosphere to carbonize the aerogel to obtain a precursor of the carbon source coated hollow silica template;
s16, placing a precursor of the carbon source coated hollow silica template in an inert atmosphere for carbothermic reduction reaction to obtain a crude product;
s17, performing carbon removal and acid washing treatment on the crude product to obtain silicon carbide hollow spheres with saccharomycetes morphology, and effectively reducing the density of the wave absorber;
s2, preparing a nano metal coating, wherein S2 comprises the following steps:
s21, preprocessing the silicon carbide hollow spheres;
s22, carrying out nano metal coating on the surface of the silicon carbide hollow sphere by using a sodium hypophosphite-nickel chloride system or a glucose-silver nitrate system to obtain the hollow microsphere wave absorber, and respectively electroplating nano nickel particles and nano silver particles on the surface of the silicon carbide hollow sphere so as to adjust the magnetism of the wave absorber.
When the nano metal plating is performed by using a sodium hypophosphite-nickel chloride system in S22, the pretreatment in S21 is sensitization treatment and activation treatment.
S22, when a sodium hypophosphite-nickel chloride system is used for carrying out nano metal coating, the nano metal coating is carried out in an alkaline environment at 70 ℃, and the product is specifically hollow silicon carbide coated by nano nickel particles, wherein the nickel particles have magnetism, so that the magnetic parameters of the wave absorber can be increased.
When the nano metal plating is performed by using a glucose-silver nitrate system in S22, the pretreatment in S21 is sensitization.
S22, when a glucose-silver nitrate system is used for nano metal coating, the nano metal coating is required to be carried out in an alkaline environment at 30 ℃, and the product is specifically irregular block hollow silicon carbide coated by nano silver particles.
The dimensional parameters of the hollow structure of the wave absorber, such as radius, thickness of the wave absorber, and the like, can be calculated according to the density of the wave absorber and the photosensitive resin; after the size of the hollow structure is determined, the electromagnetic parameters of the hollow wave absorber can be determined, and the calculation method is mature and is not described in detail; the electromagnetic parameters of the hollow wave absorber can be adjusted by preparing the nano metal coating on the surface of the hollow wave absorber.
The beneficial effects of the invention are as follows:
the 3D printing photosensitive resin containing the hollow microsphere wave absorber can effectively reduce the density of the wave absorber by adopting the hollow microsphere wave absorber, greatly improve the radar wave absorptivity of the wave absorber, solve the problem that the density difference between the traditional wave absorber and photosensitive resin is overlarge, cause the wave absorber to produce precipitation, further influence the fluidity of the photosensitive resin, finally cause the failure of a 3D printing process, ensure the practicability of the photosensitive resin, and calculate the electromagnetic parameters of the hollow microsphere wave absorber according to the densities of the wave absorber and the photosensitive resin, prepare a nano metal coating on the surface of the hollow wave absorber to adjust the electromagnetic parameters of the hollow wave absorber, thereby further improving the practicability of the photosensitive resin.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (5)
1. The 3D printing photosensitive resin containing the hollow microsphere wave absorber is characterized by comprising a wave-absorbing photosensitive resin, wherein the wave-absorbing photosensitive resin is a photosensitive resin added with the hollow microsphere wave absorber, and the preparation method of the hollow microsphere wave absorber comprises the following steps of:
s1, constructing a silicon carbide hollow sphere, wherein the S1 comprises the following steps:
s11, selecting high-activity dry yeast as a soft template, and preprocessing the dry yeast to recover the activity of the yeast;
s12, adding ethyl orthosilicate into saccharomycetes with recovered activity in a weak alkaline environment, and stirring;
s13, after stirring is completed, performing high-temperature calcination to remove internal substances of saccharomycetes, and obtaining a hollow silica template with saccharomycetes morphology;
s14, forming carbon aerogel by the hollow silicon dioxide template and a proper amount of resorcinol and formaldehyde solution under the catalysis of sodium carbonate;
s15, calcining the aerogel at a high temperature in an inert atmosphere to carbonize the aerogel to obtain a precursor of the carbon source coated hollow silica template;
s16, placing a precursor of the carbon source coated hollow silica template in an inert atmosphere for carbothermic reduction reaction to obtain a crude product;
s17, performing carbon removal and acid washing treatment on the crude product to obtain a silicon carbide hollow sphere with a saccharomycete shape;
s2, preparing a nano metal coating, wherein the S2 comprises the following steps:
s21, preprocessing the silicon carbide hollow spheres;
s22, carrying out nano metal coating on the surface of the silicon carbide hollow sphere by using a sodium hypophosphite-nickel chloride system or a glucose-silver nitrate system to obtain the hollow microsphere wave absorber.
2. The photosensitive resin for 3D printing containing a hollow microsphere wave absorber according to claim 1, wherein when the nano metal coating is performed by the system of sodium hypophosphite-nickel chloride in S22, the pretreatment of S21 is sensitization treatment and activation treatment.
3. The photosensitive resin for 3D printing containing the hollow microsphere wave absorber according to claim 2, wherein when the nano metal coating is performed by using a sodium hypophosphite-nickel chloride system in S22, the nano metal coating is performed in an alkaline environment at 70 ℃, and the product is specifically hollow silicon carbide coated with nano nickel particles.
4. The photosensitive resin for 3D printing containing a hollow microsphere wave absorber according to claim 3, wherein the pretreatment of S21 is sensitization treatment when the nano metal plating is performed by S22 using a glucose-silver nitrate system.
5. The photosensitive resin for 3D printing containing the hollow microsphere wave absorber according to claim 1, wherein when the nano metal coating is performed by using a glucose-silver nitrate system in S22, the nano metal coating is performed in an alkaline environment at 30 ℃, and the product is specifically irregular block-shaped hollow silicon carbide coated by nano silver particles.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310661595.4A CN116675990A (en) | 2023-06-06 | 2023-06-06 | Photosensitive resin containing hollow microsphere wave absorber for 3D printing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310661595.4A CN116675990A (en) | 2023-06-06 | 2023-06-06 | Photosensitive resin containing hollow microsphere wave absorber for 3D printing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116675990A true CN116675990A (en) | 2023-09-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN202310661595.4A Pending CN116675990A (en) | 2023-06-06 | 2023-06-06 | Photosensitive resin containing hollow microsphere wave absorber for 3D printing |
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| Country | Link |
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| CN (1) | CN116675990A (en) |
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