CN116672909A - Semiconductor grade airtight cavity type even gas disk - Google Patents

Semiconductor grade airtight cavity type even gas disk Download PDF

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Publication number
CN116672909A
CN116672909A CN202310931840.9A CN202310931840A CN116672909A CN 116672909 A CN116672909 A CN 116672909A CN 202310931840 A CN202310931840 A CN 202310931840A CN 116672909 A CN116672909 A CN 116672909A
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China
Prior art keywords
air
gas
fixedly connected
cover plate
chamber
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CN202310931840.9A
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CN116672909B (en
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莫任福
於军
李昌哲
徐文军
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Tuolunsi Semiconductor Equipment Qidong Co ltd
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Tuolunsi Semiconductor Equipment Qidong Co ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67253Process monitoring, e.g. flow or thickness monitoring
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01FMIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F23/00Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
    • B01F23/10Mixing gases with gases
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01FMIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F33/00Other mixers; Mixing plants; Combinations of mixers
    • B01F33/70Mixers specially adapted for working at sub- or super-atmospheric pressure, e.g. combined with de-foaming
    • B01F33/71Mixers specially adapted for working at sub- or super-atmospheric pressure, e.g. combined with de-foaming working at super-atmospheric pressure, e.g. in pressurised vessels
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01FMIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F33/00Other mixers; Mixing plants; Combinations of mixers
    • B01F33/80Mixing plants; Combinations of mixers
    • B01F33/82Combinations of dissimilar mixers
    • B01F33/821Combinations of dissimilar mixers with consecutive receptacles

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

The invention relates to the field of semiconductor process equipment, in particular to a semiconductor-grade closed cavity type air homogenizing disc, which comprises a base, an air inlet hole, an air chamber cavity, an air path, a connecting mechanism, a one-way mechanism, an air outlet hole and a cover plate, wherein the air inlet hole is arranged on the base; the base is a circular chassis, the air inlet is positioned at the edge of the base, the air inlet is communicated with the air chamber cavity, and the air chamber cavity is fixedly connected with the upper surface of the base; the air channel is fixedly connected with the air chamber cavity, the air chamber cavity is distributed around the central shaft of the base, and the connecting mechanism is fixedly connected with one end of the air chamber cavity; the unidirectional mechanism is fixedly connected with the air chamber cavity; the air outlet hole is positioned on the surface of the cover plate, the cover plate is a circular cover body, and the cover plate is fixedly connected with the upper end of the air chamber cavity in a friction stir welding mode; through the structure to the air chamber, can realize gaseous premixing well to improve gaseous degree of consistency and stability, simultaneously, owing to combine the multicavity room, realized finer gas flow control, thereby make gas flow more stable and controllable.

Description

Semiconductor grade airtight cavity type even gas disk
Technical Field
The invention relates to the field of semiconductor process equipment, in particular to a semiconductor-grade closed cavity type gas homogenizing disc.
Background
With the continuous development of semiconductor manufacturing technology, the requirements on the gas environment in the working process are also higher and higher; the gas homogenizing disc is used as equipment for semiconductor processing and is used to convey high purity inert gas into the processing chamber to ensure the stability of the gas environment and product quality.
In the process of semiconductor brazing, in order to ensure the welding quality and process controllability, and concentrate welding energy, a heat affected zone is small, and a gas homogenizing disc is needed to control the gas environment of a working area; when the gas homogenizing disc just starts to operate, the flow and pressure distribution of the gas are not uniform enough due to the inertia effect of the gas, and stable uniform gas flow output can be achieved only by adjusting for a certain time; according to the gas conditions required by different semiconductor materials, the gas is preheated and pre-homogenized by pre-inflating, pre-heating and other means to ensure the stability and consistency of the operation of the gas homogenizing disc; at this stage, since the gas does not completely fill the entire gas distribution plate at the beginning, the unstable gas flow also occurs, and even if the pre-homogenization is performed inside the gas distribution plate, a part of the gas flows to the outlet, so that the gas is dispersed during the homogenization process, and thus the gas flows from the high pressure to the low pressure during the gas output, and thus the gas output is unstable at the beginning of the operation.
Under the influence of the influence factors, the Chinese invention patent: CN201110388396.8 (publication: 2015-12-09) discloses a gas homogenizing disc for an intake structure; the air distribution device comprises a plurality of small holes for air inlet, wherein the small holes are distributed from the center to the edge of an air distribution disc in a mode of from dense to sparse, from dense to dense or from dense to dense again; through the mode, the gas flow density in the reaction chamber is uniform, the effect of improving the uniformity of the gas on the surface of the chip is achieved, and the density distribution of the gas reaching the surface of the chip tends to be uniform.
The invention structurally improves the gas homogenizing disc, so that the whole gas outlet mode is uniform and the gas distribution density is consistent, but the invention homogenizes and stabilizes the whole gas production process, but the gas outlet structure of the gas homogenizing disc outputs the gas after the gas is required to be homogenized in the initial stage of starting, and the problem of nonuniform gas outlet is often caused by the original existence of the gas in the gas homogenizing disc under the influence of such factors; such problems have not been reasonably solved, and even if the initial gas is not uniform for a short time during the semiconductor processing, the semiconductor processing is a very high precision process, and the resulting processing effect may have errors or influence on the precision.
In order to solve the problems, the working performance of the semiconductor-grade airtight cavity type gas homogenizing disc is improved to ensure a more accurate gas environment, and then the invention provides the semiconductor-grade airtight cavity type gas homogenizing disc to solve the problems.
Disclosure of Invention
In view of the above drawbacks of the prior art, an object of the present invention is to provide a semiconductor-grade closed-cavity type gas distribution plate for reducing the problem of uneven output caused by unstable gas flow during the operation of the semiconductor gas distribution plate while ensuring uniform gas output.
In order to solve the technical problems, the invention adopts the following technical scheme: the semiconductor-grade airtight cavity type air homogenizing disc comprises a base, an air inlet hole, an air chamber cavity, an air path, a connecting mechanism, a one-way mechanism, an air outlet hole and a cover plate.
The circular chassis may be made of metal or plastic, and an air inlet hole is formed at the edge of the chassis and is used for introducing external air, the air inlet hole is communicated with the air chamber cavity, the air chamber cavity is a closed space and is fixedly connected with the upper surface of the chassis, the air chamber cavity is used for homogenizing air, the air channel is connected to the air chamber cavity, and the air channel is used for introducing air or releasing air from the outside into the air chamber cavity or releasing air from the air chamber cavity; the air chamber cavity is arranged around the central shaft of the base, and the connecting mechanism is fixedly connected to one end of the air chamber cavity; the unidirectional mechanism is a device fixedly connected with the air chamber cavity, and can control the flowing direction of the air in the air chamber cavity so as to realize the mixing of the air; the cover plate is a round cover body and is used for covering the top of the air chamber cavity and fixedly connected with the upper end of the air chamber cavity in a friction stir welding mode, and accurate positioning and stable welding can be realized in the friction stir welding mode; the air outlet hole is positioned on the surface of the cover plate.
The air chamber comprises a subchamber and a main chamber; the main chamber is positioned at the central shaft of the base, the subchambers are arranged around the main chamber in a star-shaped arrangement mode and are connected with each other through the air passage, and the adjacent subchambers are connected with a plurality of annular channels through the air holes to form a circle, so that the space is maximally utilized, and the gas is maximally homogenized; the arrangement mode is star-shaped, so that the gas can be arranged around the subchambers according to the maximum circumference, the use area is enlarged, uniform flow pressurization homogenization can be performed inside, and meanwhile, the gas can be fully mixed in the air chamber; simultaneously, the subchamber is connected with the main chamber through the connecting mechanism, and the subchamber is communicated with the connecting mechanism through the communication hole; when the gas enters the subchamber through the gas inlet holes, the gas is pressurized under the condition of closed environment, and the activity of the gas is enhanced due to the enhancement of the pressure, so that the Brownian movement is enhanced, and the homogenization effect of the gas is better; the mode ensures that the gas can flow in the cavity of the gas chamber rapidly and uniformly, reduces stagnation and instability of the gas in the channel and improves the mixing uniformity and stability.
One point to introduce about this part of the structure is that the apparatus employs flow pre-homogenization to achieve uniform flow pressurization and thorough mixing of the gas within the chamber. Through the mode that the star was arranged, the marginal space of sub-cavity make full use of main cavity, maximize the gas flow region to realize more even gas mixing, improve gas quality, avoid the appearance of local high low pressure differential, make the gaseous environment in the semiconductor manufacture can more accurate control and operation.
When at most not more than 4 inert gases enter the subchambers through the air inlet holes, as the adjacent subchambers are communicated through the air paths to form a closed loop, the various inert gases are pressurized and circulated and homogenized among the subchambers through the air paths. The gas pressure in each subchamber gradually increases and equalizes as the inert gas is continuously fed. When the pressure exceeds the force set by the coupling mechanism, gas enters the gas path from the coupling mechanism according to a star configuration and enters the main chamber at the same time. In the main chamber, the inert gases are continuously mixed and uniformly distributed; the number of subchambers may be 6, preferably 8, with the main objective of reasonably and efficiently distributing the area within the tray for optimal gas homogenization.
The connecting mechanism comprises a shell, an air pushing plate, a compression spring and a supporting piece; the shell is a hollow cylinder, the inner wall of the shell extends out of the annular bulge, the annular bulge is used for positioning the gas pushing plate, the gas pushing plate is a circular plate, one side of the gas pushing plate is provided with the gas channels, the number of the gas channels along the central axis annular array of the gas pushing plate is not less than 10, and the connecting mechanism can stabilize equipment at the initial stage of starting to work due to the compression springs arranged in the connecting mechanism, so that the problem that the equipment is poor in initial gas homogenization or is insufficient in gas interruption due to the initial stage is solved; the annular bulge can be tightly attached to the gas pushing plate and is sealed under the action of gas isolation treatment, so that the gas channel on the gas pushing plate is sealed by the annular bulge in a non-working state, and the pressurization of gas on one side of the connecting mechanism is realized; the air pushing plate is a circular plate and is of a circular structure so as to cling to the inner edge of the shell.
As the pressure increases, the pressure of the gas in the subchamber increases gradually until the force set by the coupling mechanism is exceeded. At this time, the gas starts to flow to the coupling mechanism, pushing the gas push plate to slide, and deforming the compression spring. Because the support piece is connected with the inner wall of the shell, the compression spring is fixedly connected with the support piece, and the compression spring can be deformed under the action of force. In this case, the gas passage is exposed, and gas flows from one side of the passage to the other side of the coupling mechanism, thereby achieving pressurized passage of gas. Thus, the coupling mechanism is able to ensure the flow of gas and remain stable under pressure.
It should be mentioned that the coupling mechanism may reduce the instability problem of the gas flow by pre-treating the gas. When the gas enters the subchamber, it is homogenized first and then pressurized before the gas pressure reaches the set pressure. This process greatly reduces the instability of the gas just at the beginning of its output. Meanwhile, the structure can also control the flow speed of the air flow, so that the output of the air is more controllable. The set width of the annular bulge exceeds the width of the air pushing plate, so that the air pushing plate is tightly attached to the annular bulge under the action of the compression spring. The diameter of the gas passage is 0.5mm, so that the normal passage of gas can be ensured, and the gas passage can also be sealed by the annular protrusion, thereby avoiding gas leakage.
The gas channel is used for communicating with the gas path; the support piece is arranged on the inner wall of the shell at one side of the air pushing plate and used for fixing the compression spring, one side of the compression spring is fixedly connected with the support piece, and the other side of the compression spring is fixedly connected with the air pushing plate; when the gas pushing plate is attached to the annular bulge, gas isolation treatment is needed to realize movable sealing; the inner diameter of the annular bulge is smaller than the distance from the central shaft of the gas pushing plate to the gas channel, and the diameter of the gas channel can be 0.5mm or 1mm, so that the annular bulge can cover the gas channel.
The structure can replace the existing electrons, and has the advantages that compared with the structure adopting an electronic sensor, the structure is more visual and reliable, so that a worker can directly observe the air outlet state of the air homogenizing disc without depending on the electronic sensor to judge; the visual observation mode can effectively reduce the possibility of errors and is not influenced by the possible interference or faults of the electronic sensor; in addition, the invention is a pure mechanical structure as a whole, and the operating principle and influencing factors are small, so that the equipment can still work normally under the conditions of high temperature, high voltage or strong electromagnetic interference and the like.
The unidirectional mechanism comprises a rotating assembly and a flap valve; the rotating assembly is coaxially arranged with the main cavity, the diameter of the rotating assembly is smaller than the inner diameter of the main cavity, and the outer edge of the rotating assembly is provided with a clamping structure; the flap valve rotates to be connected the inboard edge of unidirectional mechanism, the flap valve is unidirectional rotation board, just flap valve one end is passed through the articulated shaft with the interior wall of main cavity rotates to be connected, and the other end is in order to satisfy sealedly, fixedly connected with sealed the gum head, thereby flap valve rotation range sets up to 30 or 40 thereby realize the flap valve sustainable give the rotating force of rotating assembly, and with rotating assembly's joint structure contacts, simultaneously, rotating assembly is unidirectional rotation together, rotating assembly's rotation direction with the rotation direction of flap valve is the same.
When gas enters the main cavity through the connecting mechanism, a one-way mechanism is arranged in the main cavity, the gas is gathered in a closed space in the main cavity, the resistance of the flap valve is 4atm due to the fact that the gas rate of continuous input is 1.5L/s, the friction force of a rotating component in the one-way mechanism is 0.1N.m, the friction force of the rotating component is 0.1N.m and is used for being overlapped with the torsion spring, the integral data realize that the gas can push the flap valve after exceeding the integral resistance after being overlapped, so that when the gas pressure exceeds the sum of the resistance of the flap valve and the friction force of the rotating component in the one-way mechanism, the flap valve can only rotate unidirectionally and the rotation amplitude is 30 degrees, and the problem that the flap valve can not be blocked due to overlarge angle and the problem that the gas output is slow due to overlarge rotation angle in the rotation process is solved; the flap valve deflects, a rotating assembly is arranged at the edge of the rotating assembly, the flap valve drives the rotating assembly to rotate, and under the condition of stable gas, the clamping plate is continuously contacted with the rotating assembly and then separated, so that a rotating force is continuously generated; the hinged part of the flap valve is preset with resistance through the torsion spring, the gas speed input into the closed space can be set to be 1L/s or 1.5L/s, and the pressure for pushing the flap valve is set to be 4atm or 5atm, so that the integral pressure applying and changing mode is met.
The cover plate is fixedly connected with the unidirectional mechanism, a plurality of air outlet holes are formed in the surface of the cover plate, the aperture of each air outlet hole can be 0.3mm, 0.5mm and 1mm, the set data can meet the uniform air outlet rate of equipment, a plurality of air outlet holes are circumferentially arrayed around the central axis of the cover plate, the number of the air outlet holes is 3000 or 5000 or 7000, and the air outlet rate is stable in combination with the aperture of each air outlet hole; the cover plate is made of transparent material, and quartz, glass, polymer or fluoroplastic can be selected, preferably quartz; the cover plate is of a spaced hollow structure, and the cover plate divides the unidirectional mechanism into a plurality of sealing spaces.
The friction force of the rotating assembly in the unidirectional mechanism is 0.1 N.m or 0.5 N.m, the number of the closed spaces is preferably 5, and the volume of each closed space is preferably 80 cubic centimeters, so that the unidirectional mechanism can convert and utilize the gas, and the final gas can be produced at a uniform speed.
The beneficial effects of the invention are as follows.
1. The connecting mechanism is arranged between the air chamber cavities, and the air can be well premixed due to the special combination mode of the air chamber cavities, so that the uniformity and stability of the air are improved, and the air premixing device is suitable for a plurality of precise air distribution systems; meanwhile, as the multiple chambers are combined, the gas is pressurized and homogenized in the multiple chambers, and the final output flow of the gas is more stable.
2. The invention combines the one-way mechanism of the main cavity, so that various gases are concentrated in the main cavity after pressurization and homogenization, then secondary homogenization is carried out, the gases are pressurized equally, and dynamic rotary motion type pressurization and homogenization different from a primary pressurization mode is adopted, so that the output gases are further stable, and meanwhile, the problem of unstable gas output and air flow backflow in the earlier stage is reduced due to preset resistance arranged in the whole structure.
3. According to the invention, the cover plate is matched with the one-way mechanism, so that compared with an electronic sensor, the structure of the invention is more visual and reliable, and a worker can directly observe the air outlet state of the air homogenizing disc without relying on the electronic sensor to judge; the visual observation mode can effectively reduce the possibility of errors and is not influenced by the possible interference or faults of the electronic sensor; in addition, the invention is a pure mechanical structure as a whole, and the operating principle and influencing factors are small, so that the equipment can still work normally under the conditions of high temperature, high voltage or strong electromagnetic interference and the like.
Drawings
The drawings that accompany the detailed description can be briefly described as follows.
The following is an integral part of the structure.
Fig. 1 is a schematic view of the appearance.
Fig. 2 is a top view.
Fig. 3 is a front view.
To know the internal structure, a cross-sectional view is provided as in fig. 4.
The following is presented with respect to the coupling mechanism.
Fig. 5 is a schematic view of a coupling mechanism.
Fig. 6 is a cross-sectional view.
Fig. 7 is a bottom view.
FIG. 8 is a schematic diagram of an air push plate according to the present invention.
Fig. 9 is a schematic view of a unidirectional mechanism of the present invention.
Fig. 10 is a top view of the unidirectional mechanism of the present invention.
Fig. 11 is a schematic view of the torsion spring installation of the present invention.
In the figure: 1. a base; 2. an air inlet hole; 3. an air chamber cavity; 31. a subchamber; 311. air holes; 32. a main chamber; 4. an air path; 41. an annular channel; 42. a communication hole; 5. a coupling mechanism; 51. a housing; 511. an annular protrusion; 52. a gas pushing plate; 521. a gas channel; 53. a compression spring; 54. a support; 6. a unidirectional mechanism; 61. a rotating assembly; 611. a clamping structure; 62. a flap valve; 621. a torsion spring; 622. a hinge shaft; 623. a sealing glue head; 7. an air outlet hole; 8. and a cover plate.
Detailed Description
The following describes the embodiments of the present invention further with reference to the drawings. The description of these embodiments is for aiding in understanding the present invention, and is not intended to limit the present invention. In addition, the technical features of the embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
Embodiment one.
As shown in fig. 1 to 3, a semiconductor-grade closed cavity type air homogenizing disc is provided, and comprises a base 1, an air inlet hole 2, an air chamber 3, an air channel 4, a connecting mechanism 5, a one-way mechanism 6, an air outlet hole 7 and a cover plate 8.
As shown in fig. 1-4, the base 1 is a circular chassis, the air inlet holes 2 are positioned at the edge of the base 1, the air inlet holes 2 are communicated with the air chamber cavity 3, and the air chamber cavity 3 is fixedly connected with the upper surface of the base 1; the air channel 4 is fixedly connected with the air chamber cavity 3, the air chamber cavity 3 is distributed around the central shaft of the base 1, and the connecting mechanism 5 is fixedly connected to one end of the air chamber cavity 3; the unidirectional mechanism 6 is fixedly connected with the air chamber cavity 3; the air outlet holes 7 are formed in the surface of the cover plate 8, the cover plate 8 is a round cover body, and the cover plate 8 is fixedly connected with the upper end of the air chamber cavity 3 in a friction stir welding mode.
As shown in fig. 4, the air chamber 3 includes a sub-chamber 31 and a main chamber 32; the main chamber 32 is located at the central axis of the base 1, the sub-chambers 31 are distributed in a star shape around the main chamber 32, the number of the sub-chambers 31 is 8, and the sub-chambers are circumferentially arrayed around the central axis of the base 1; the adjacent subchambers 31 are communicated through the air passage 4, a closed loop is formed between the subchambers 31, and the subchambers 31 are communicated with the main chamber 32 through the connecting mechanism 5; 8 sub-chambers 31, wherein four sub-chambers 31 are fixedly connected with the air inlet hole 2.
The device is characterized in that a flowing type pre-homogenization effect is carried out in the air chamber 3, the sub-chambers 31 are arranged around the main chamber 32 in a star-shaped arrangement mode due to the star-shaped arrangement mode, the sub-chambers are connected with each other through the air channel 4, and the adjacent sub-chambers 31 are connected with a plurality of annular channels 41 through the air holes 311 to form a circle, so that the space is maximally utilized, and the gas is maximally homogenized; the star-shaped arrangement mode enables the gas to uniformly flow, pressurize and homogenize in the subchamber 31, and simultaneously can realize the sufficient mixing of the gas in the gas chamber 3; the 8 sub-chambers 31 fully utilize the edge space of the main chamber 32 to maximize the gas flow area, so as to achieve more uniform gas mixing, thereby improving the quality of the gas, avoiding the occurrence of local high-low pressure difference, and further being capable of more precisely controlling and operating the gas environment in the semiconductor manufacturing.
When no more than 4 inert gases enter the sub-chambers 31 from the air inlet holes 2, as the adjacent sub-chambers 31 are communicated through the air paths 4 to form a closed loop, the inert gases are pressurized and circulated and homogenized among the plurality of sub-chambers 31 through the air paths 4, and when the inert gases are continuously input, the gas pressure in each sub-chamber 31 is gradually increased and equal; when the pressure exceeds the force provided by the coupling mechanism 5, the gas will enter the gas path 4 from the coupling mechanism 5 in a star configuration and simultaneously enter the main chamber 32, and the inert gas will be continuously mixed and uniformly distributed in the main chamber 32.
Because the subchambers are surrounded on the outer edge of the connecting mechanism through a star-shaped structure, when the gas of the subchambers enters from the gas inlet holes, four different gases enter the gas chamber of the outer edge of the connecting mechanism from four directions, and the connecting mechanism 5 between the subchambers 31 and the main chamber 32 is arranged at the central axis position, so that the stability and uniformity of the gas flowing from the subchambers 31 to the main chamber 32 are ensured, and the flow path of the gas is clearer; in addition, the sub-chamber 31 fixedly connected with the air inlet hole 2 in the sub-chamber 31 contributes to further improving the effect of the homogenization of the gas, because the structure of the sub-chamber 31 is easier to accept the inflow of inert gas, thereby promoting the uniform distribution of the gas, and the design of the air chamber 3 aims to realize the homogenization of the gas in the sub-chamber 31 by the fine layout and the arrangement of the coupling mechanism and ensure the optimal uniformity and stability of the gas before the gas flows into the main chamber 32.
As shown in fig. 5 to 8, the coupling mechanism 5 includes a housing 51, an air push plate 52, a compression spring 53, and a support 54; the casing 51 is a hollow cylinder, the annular protrusion 511 extends from the inner wall of the casing 51, the annular protrusion 511 is used for fixing the air pushing plate 52, the annular protrusion 511 can be tightly attached to the air pushing plate 52 and is sealed under the effect of air isolation treatment, so that in a non-working state, the air channel 521 on the air pushing plate 52 is sealed by the annular protrusion 511, and air is pressurized on one side of the coupling mechanism 5; the air pushing plate 52 is a circular plate, the circular structure is used for enabling the air pushing plate 52 to be tightly attached to the inner edge of the shell 51, the air pushing plate 52 is provided with air channels 521, the air channels 521 are annularly arranged around the central shaft of the air pushing plate 52 so as to meet the requirement of communicating the subchambers 31 with the connecting mechanism 5, the number of the air channels 521 is the same as that of the subchambers 31, the inner wall of the shell 51 on one side of the air pushing plate 52 is provided with supporting pieces 54, the supporting pieces 54 are used for supporting and fixing the compression springs 53, one side of each compression spring 53 is fixedly connected with the supporting pieces 54, the other side of each supporting piece 54 is fixedly connected with the air pushing plate 52, and air isolation treatment is adopted between the air pushing plate 52 and the annular protrusions 511 so as to ensure the air tightness of the connecting mechanism 5.
With the gradual increase of the pressure, the pressure of the gas in the subchamber 31 is continuously increased until the pressure exceeds the force set by the coupling mechanism 5, at this time, the gas starts to flow to the coupling mechanism 5, the gas pushing plate 52 is pushed to slide, and the compression spring 53 is deformed, because the supporting piece 54 is fixedly connected to the inner wall of the shell 51, the compression spring 53 is fixedly connected to the supporting piece 54, so that the compression spring 53 is stressed and deformed, at this time, the gas channel 521 is exposed, and the gas flows from the gas channel 521 to the other side of the coupling mechanism 5, so that the gas can be pressurized and then passes through, therefore, the coupling mechanism 5 can ensure the flow of the gas, and is kept stable under the pressure.
The coupling mechanism 5 can reduce the problem of unstable gas flow by pre-treatment of the gas; when the gas enters the subchamber 31 and is homogenized, then pressurization treatment is carried out before the gas pressure reaches the set pressure, and after the set pressure is reached, the gas enters the main chamber 32, and the instability of the gas when the gas just begins to be output is greatly reduced; at the same time, the structure can realize the control of the flow rate of the gas flow, so that the output of the gas is more controllable, the width of the annular protrusion 511 exceeds the width of the gas pushing plate 52, the gas pushing plate 52 is tightly attached to the annular protrusion 511 under the action of the compression spring 53, the diameter of the gas channel 521 is 0.5mm, the normal passing of the gas can be ensured, and the gas can be sealed by the annular protrusion 511, so that the gas leakage is avoided.
As shown in fig. 9, 10 and 11, the unidirectional mechanism 6 is used for the flow direction of the gas, and comprises a rotating assembly 61 and a flap valve 62; the rotating assembly 61 and the main chamber 32 are coaxially arranged, the diameter of the rotating assembly 61 is smaller than the inner diameter of the main chamber 32, and a clamping structure 611 is arranged at the outer edge of the rotating assembly 61; the flap valve 62 is rotatably connected to the inner edge of the unidirectional mechanism 6, and one end of the flap valve 62 is provided with a resistance of 4atm through the torsion spring 621; the 4atm resistance is set to realize precondition of the pressurizing homogenization process, and at the same time, the gas reaches the most pressure in the dormitory main chamber 32 to push the flap valve 62 to rotate, and the flap valve 62 is set to rotate in a unidirectional direction, so that the flap valve 62 can rotate only in a single direction, when the gas is pushed back or the internal air pressure is unstable, the gas can be forced to be stable due to the existence of the flap valve 62, and the gas channel and the air outlet stability are always kept in a pressurized state.
The rotating component 61 is coaxially arranged with the main chamber 32, the diameter of the rotating component 61 is smaller than the inner diameter of the main chamber 32, so that the rotating component 61 can rotate in the main chamber 32, the clamping structure 611 is arranged at the outer edge of the rotating component 61, the clamping structure 611 is in a saw-tooth structure and can be clamped with other parts, the outermost side of the flap valve 62 is matched with the saw-tooth structure of the clamping structure 611, the flap valve 62 can perfectly seal gas while being clamped with the clamping structure 611, the flap valve 62 can unidirectionally rotate under the limit of the flap valve 62 when the gas exceeds the set resistance, the flap valve 62 keeps sealing when not rotating due to the sealing function of the sealing glue head 623, and when rotating, the hinge shaft 622 rotates to promote the gas to overflow from a channel in the turning direction of the flap valve 62; the rotating assembly 61 has high strength and corrosion resistance; the main function is to realize the movement adjustment of the gas by a rotating mode and to change the direction of the channel by rotating, thereby controlling the flow direction of the gas.
When gas enters the main chamber 32 through the coupling mechanism 5, a unidirectional mechanism 6 is arranged in the main chamber 32, the gas is gathered in a closed space in the main chamber 32, the resistance of the flap valve 62 is 4atm due to the fact that the continuously input gas rate is 1.5L/s, the friction force of the rotating component 61 in the unidirectional mechanism 6 is 0.1N.m, the friction force of the 0.1N.m is used for being overlapped with the torsion spring 621, so that the flap valve 62 can be pushed by the gas after the gas needs to exceed the overlapped integral resistance, and therefore, when the gas pressure exceeds the sum of the resistance of the flap valve 62 and the friction force of the rotating component 61 in the unidirectional mechanism 6, the flap valve 62 can only rotate unidirectionally and the rotation amplitude is 30 degrees, so that the problem of slow gas output caused by the phenomenon of locking caused by overlarge angle and overlarge rotation angle in the rotation process of the flap valve 62 can be avoided; the flap valve 62 deflects, the edge of the rotating assembly 61 is provided with the rotating assembly 61, the flap valve 62 drives the rotating assembly 61 to rotate, and under the condition of stable gas, the clamping plate is continuously contacted with the rotating assembly 61 and then separated, and the rotating force is continuously generated.
When the internal gas pressure of the unidirectional mechanism 6 exceeds the sum of the resistance of the flap valve 62 and the friction force of the rotating assembly 61, the unidirectional mechanism can generate continuous rotating force by utilizing the synergistic action of the flap valve 62 and the rotating assembly 61 so as to achieve the effect of outputting gas; compared with other air homogenizing discs, the stability of the output air flow is greatly improved, and meanwhile, the rotation amplitude and the contact mode of the flap valve 62 greatly reduce the contact area between the rotating assemblies 61, reduce friction loss and improve transmission efficiency; meanwhile, the unidirectional mechanism 6 has the advantages of simple structure, small volume, light weight and convenient maintenance, and can be used in a smaller space.
Another arrangement may be: the unidirectional mechanism 6 is arranged to be driven by a spring, the cover plate 8 is fixedly connected with one end of the spring, the other end of the spring is fixedly connected inside the main chamber 32, the cover plate 8 is divided into two parts, a part of the non-working state of the spring is in a sealing state, when air flow passes through the coupling mechanism 5 and enters the main chamber 32, under the action of pressure, the spring is an extension spring, the cover plate 8 is pushed by air, the air outlet 7 on the cover plate 8 is exposed, and the same pressurizing output effect is realized by the air to ensure stable air flow output.
The differences are: the unidirectional mechanism comprises a coupling mechanism 5, a cover plate 8, a spring and a main chamber 32; the coupling mechanism 5 is used for connecting the air inlet and the air outlet, and the cover plate 8 is used for covering the main cavity 32 and the air outlet 7; the spring is used for driving the cover plate 8, and the pressurized output of the gas is realized under the action of the air flow pressure.
The cover plate 8 is fixedly connected with the unidirectional mechanism 6, a plurality of air outlet holes 7 are formed in the surface of the cover plate 8, the aperture of each air outlet hole 7 is set to be 0.5mm, the air outlet holes 7 with the aperture of 0.5mm can realize normal output of gas, and meanwhile the number of the air outlet holes 7 in the same area is in a proper range of gas output; so the plurality of air outlet holes 7 are arrayed around the central axis of the cover plate 8, and the number of the air outlet holes 7 is most suitable to be arranged at 5000 holes under the condition of the currently arranged air outlet holes 7 with the aperture of 0.5 mm; meanwhile, the cover plate 8 is made of transparent material, the transparent material is quartz, the cover plate 8 is of a structure with hollow intervals, and the cover plate 8 divides the unidirectional mechanism 6 into a plurality of sealing spaces.
As shown in fig. 4, the cover plate 8 is fixedly connected with the upper end of the air chamber 3 by friction stir welding, and because the cover plate 8 has a hollow structure, the hollow structure seals the flap valve 62 to seal the space, and the cover plate 8 uniformly separates the main chamber 32 into 5 sealed spaces with a volume of 80 cubic centimeters, so that the whole size of the device is adapted, the normal output of the air is ensured, and the problem of uneven air caused by too small volume is reduced; on the other hand, because quartz is an amorphous material, when a friction stir welding mode is adopted, the problems of melting, sintering, cracking and the like are caused by the fact that the welding temperature is too high, a layer of metal needs to be coated on the surface of the quartz in the welding process, and then the quartz and the metal are connected through friction welding and diffusion reaction among the metals; by means of the mode, the working flow in the unidirectional mechanism 6 can be visualized, the whole work is more reliable, and a worker can directly observe the air outlet state of the air homogenizing disc without relying on an electronic sensor to judge; the possibility of error can be effectively reduced, and the electronic sensor is not influenced by interference or faults possibly existing in the electronic sensor; in addition, the structure is simpler, the cost is lower, and the maintenance and the repair are easier, so that the whole equipment can work normally under the conditions of high temperature, high voltage or strong electromagnetic interference and the like.
The spring in the unidirectional mechanism is an important component for driving the cover plate 8, the cover plate 8 is fixedly connected with one end of the spring, and the other end of the spring is fixedly connected inside the main chamber 32; when the air flow enters the main chamber 32 from the coupling mechanism 5, the pressure of the air flow acts on the spring, making it an extension spring, the characteristics of this spring being such that it can push the cover plate 8, so that the air outlet holes 7 on the cover plate 8 are exposed, thus realizing the pressurized output of the air; compared with the first embodiment, the structure of the present embodiment can focus on effectively controlling the pressurized output of the gas, so as to realize stable gas flow output, when the gas flow enters the main chamber 32, the cover plate 8 is pushed by the stretching action of the spring, so that the gas outlet hole 7 is exposed, and the pressurized output of the gas is realized, and due to the characteristics of the spring, when the gas flow stops, the cover plate 8 is automatically closed by the spring, so that the reverse flow and leakage phenomena of the gas flow are avoided.
When in operation, the device comprises: when 4 inert gases enter the subchambers 31 from the air inlet holes 2, the inert gases flow in the air channel 4, the pressure of the gases in each subchamber 31 is ensured to be the same and gradually rise through circulation and homogenization among a plurality of subchambers 31, the molecular Brownian movement of the gases is accelerated due to the pressurized state, so that the homogenization effect is more excellent, and once the gases are continuously input and reach the pressure exceeding the force set by the connecting mechanism 5, the gases enter the main chamber 32 along the air channel 4 from the connecting mechanism 5 according to a star-shaped structure; in the coupling mechanism 5, as the pressure increases, the gas pushes the gas pushing plate 52, which causes the gas pushing plate 52 to start sliding under the limitation of the inner wall of the housing 51 and pushes the compression spring 53 to deform, so that the gas enters the main chamber 32 through the forced deformation of the compression spring 53 and the supporting piece 54, and after entering the main chamber 32, the gas gathers on one side of the flap valve 62 due to the unidirectional mechanism 6, and at this time, the gas must overcome the sum of the resistance of the flap valve 62 and the friction of the rotating assembly 61 due to the closure of the cover plate 8 to be output; when the air pressure exceeds the value, the flap valve 62 is pushed to rotate under the action of the clamping structure 611 at the edge of the rotating assembly 61, so that the closed space is opened, the air is output from the hollowed structure and passes through the air outlet hole 7 on the surface of the cover plate 8, and finally continuous and stable air flow output is realized.
It will be understood by those skilled in the art that the present invention is not limited to the foregoing examples, which are provided to illustrate the principles of the invention and that various changes, modifications, substitutions and alterations can be made herein without departing from the spirit and scope of the invention.

Claims (10)

1. A semiconductor-grade closed cavity type air homogenizing disc comprises a base (1), an air inlet hole (2), an air channel (4), an air outlet hole (7) and a cover plate (8); the method is characterized in that: the base (1) is a circular chassis, the air inlet hole (2) is positioned at the edge of the base (1), the air inlet hole (2) is communicated with the air chamber cavity (3), the air chamber cavity (3) is fixedly connected with the upper surface of the base (1), and the air chamber cavity (3) is used for realizing flowing type pressurizing pre-homogenizing effect on air entering from the air inlet hole (2) in the air chamber cavity (3); the gas circuit (4) is fixedly connected with the gas chamber cavity (3), the gas chamber cavity (3) is arranged in a star shape around the central shaft of the base (1), the connecting mechanism (5) is fixedly connected to one end of the gas chamber cavity (3), and the connecting mechanism (5) is used for giving certain pressure to the gas to be homogenized so as to realize automatic intermittent opening and closing of a channel to improve the effect of pre-homogenization; the unidirectional mechanism (6) is fixedly connected with the air chamber cavity (3), and the unidirectional mechanism (6) is used for rotating the opening and closing channel according to the air pressure change of the current space and stably discharging homogenized air from the air outlet hole (7); the air outlet holes (7) are formed in the surface of the cover plate (8), the cover plate (8) is a round cover body, and the cover plate (8) is fixedly connected with the upper end of the air chamber cavity (3) in a friction stir welding mode.
2. The semiconductor grade closed cavity gas distribution plate according to claim 1, wherein: the air chamber (3) comprises sub-chambers (31) and main chambers (32), the main chambers (32) are positioned at the central shaft position of the base (1), the number of the sub-chambers (31) is 6-8, and the sub-chambers (31) are arranged in a star-shaped manner around the main chambers (32); the gas path (4) is communicated between the subchambers (31), the gas path (4) comprises an annular channel (41) and communication holes (42), the annular channel (41) is communicated with the communication holes (42) of the subchambers (31), the subchambers (31) are communicated with the main chamber (32) through the connecting mechanism (5), and the subchambers (31) are communicated with the connecting mechanism (5) through air holes (311).
3. A semiconductor grade closed chamber type gas distribution plate as claimed in claim 2, wherein: the coupling mechanism (5) comprises a shell (51), an air pushing plate (52), a compression spring (53) and a support piece (54); the shell (51) is a hollow cylinder, annular protrusions (511) extend out of the inner wall of the shell (51), the air pushing plate (52) is a circular plate, air channels (521) are arranged on the air pushing plate (52), the air channels (521) surround the central shaft annular array of the air pushing plate (52) and are the same in number as the subchambers (31), supporting pieces (54) are arranged on the inner wall of the shell (51) on one side of the air pushing plate (52), one side of the compression spring (53) is fixedly connected with the supporting pieces (54), the other side of the compression spring (53) is fixedly connected with the air pushing plate (52), the air pushing plate (52) is attached to the annular protrusions (511), and attaching positions of the air pushing plate (52) and the annular protrusions (511) are sealed through sealing pieces.
4. A semiconductor grade closed chamber gas distribution plate according to claim 3, wherein: the inner diameter of the annular bulge (511) is smaller than the distance from the central shaft of the air pushing plate (52) to the air channel (521) so as to realize movable sealing with the annular bulge (511), and the diameter of the air channel (521) is set between 0.5mm and 1 mm.
5. A semiconductor grade closed chamber type gas distribution plate as claimed in claim 2, wherein: the unidirectional mechanism (6) comprises a rotating assembly (61) and a flap valve (62); the rotating assembly (61) and the main chamber (32) are coaxially arranged, the diameter of the rotating assembly (61) is smaller than one fifth of the inner diameter of the main chamber (32), and a clamping structure (611) is arranged at the outer edge of the rotating assembly (61); the flap valve (62) is rotatably connected to the inner edge of the unidirectional mechanism (6).
6. The semiconductor grade closed chamber type gas distribution plate according to claim 5, wherein: the flap valve (62) is a unidirectional rotating plate: one end of the flap valve (62) is hinged with the inside of the main chamber (32) through a hinge shaft (622), and the rotation amplitude of the flap valve (62) is set at 30-40 o The flap valve (62) is contacted with a clamping structure (611) of the rotating assembly (61), and a sealing rubber head (623) is fixedly connected with the contact point; the rotating assembly (61) rotates in a unidirectional mode, and the rotating direction is the same as that of the flap valve (62).
7. The semiconductor grade closed chamber type gas distribution plate according to claim 6, wherein: the resistance is preset on one side of the hinge point of the flap valve (62) through a torsion spring (621), the gas speed input into the closed space is set between 1L/s and 1 atm/s, and the resistance set by the torsion spring (621) is set between 4atm and 5 atm/s.
8. The semiconductor grade closed chamber type gas distribution plate according to claim 6, wherein: the cover plate (8) is fixedly connected with the unidirectional mechanism (6), a plurality of air outlet holes (7) are formed in the surface of the cover plate (8), the aperture of each air outlet hole (7) is 0.3-1mm, the air outlet holes (7) are arranged around a plurality of central shaft arrays of the cover plate (8), and the number of the air outlet holes (7) is 3000-7000.
9. The semiconductor grade closed cavity gas distribution plate according to claim 1, wherein: the cover plate (8) is made of transparent material; the cover plate (8) is of a structure with hollow intervals, and the cover plate (8) divides the unidirectional mechanism (6) into 5 sealing spaces.
10. The semiconductor grade closed chamber type gas distribution plate according to claim 9, wherein: the friction force of the rotating component (61) in the unidirectional mechanism (6) is between 0.1 and 0.5 N.m, and the number of the closed spaces in the unidirectional mechanism (6) is 3 to 6.
CN202310931840.9A 2023-07-27 2023-07-27 Semiconductor grade airtight cavity type even gas disk Active CN116672909B (en)

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CN117438156A (en) * 2023-11-30 2024-01-23 佛山市顺同佳机械制造有限公司 Cable production and processing surface dewatering and drying device and dewatering method

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WO2023093455A1 (en) * 2021-11-24 2023-06-01 无锡先为科技有限公司 Intake distribution mechanism and cvd reaction device having same

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