CN116669502A - Preparation method of perovskite solar cell - Google Patents
Preparation method of perovskite solar cell Download PDFInfo
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- CN116669502A CN116669502A CN202310562108.9A CN202310562108A CN116669502A CN 116669502 A CN116669502 A CN 116669502A CN 202310562108 A CN202310562108 A CN 202310562108A CN 116669502 A CN116669502 A CN 116669502A
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- 238000002360 preparation method Methods 0.000 title abstract description 29
- 229910052751 metal Inorganic materials 0.000 claims abstract description 75
- 239000002184 metal Substances 0.000 claims abstract description 75
- 239000000758 substrate Substances 0.000 claims abstract description 65
- 238000000034 method Methods 0.000 claims description 50
- 238000004528 spin coating Methods 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 17
- 239000002243 precursor Substances 0.000 claims description 12
- 238000007745 plasma electrolytic oxidation reaction Methods 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 4
- 238000001771 vacuum deposition Methods 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 abstract description 7
- 238000005452 bending Methods 0.000 abstract description 5
- 230000002035 prolonged effect Effects 0.000 abstract description 3
- 239000000243 solution Substances 0.000 description 14
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 9
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- LYQFWZFBNBDLEO-UHFFFAOYSA-M caesium bromide Chemical compound [Br-].[Cs+] LYQFWZFBNBDLEO-UHFFFAOYSA-M 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 229910003002 lithium salt Inorganic materials 0.000 description 2
- 159000000002 lithium salts Chemical class 0.000 description 2
- 229920000307 polymer substrate Polymers 0.000 description 2
- 239000012266 salt solution Substances 0.000 description 2
- STCOOQWBFONSKY-UHFFFAOYSA-N tributyl phosphate Chemical compound CCCCOP(=O)(OCCCC)OCCCC STCOOQWBFONSKY-UHFFFAOYSA-N 0.000 description 2
- 239000001736 Calcium glycerylphosphate Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000012296 anti-solvent Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- VSGNNIFQASZAOI-UHFFFAOYSA-L calcium acetate Chemical compound [Ca+2].CC([O-])=O.CC([O-])=O VSGNNIFQASZAOI-UHFFFAOYSA-L 0.000 description 1
- 229960005147 calcium acetate Drugs 0.000 description 1
- 235000011092 calcium acetate Nutrition 0.000 description 1
- 239000001639 calcium acetate Substances 0.000 description 1
- UHHRFSOMMCWGSO-UHFFFAOYSA-L calcium glycerophosphate Chemical compound [Ca+2].OCC(CO)OP([O-])([O-])=O UHHRFSOMMCWGSO-UHFFFAOYSA-L 0.000 description 1
- 229940095618 calcium glycerophosphate Drugs 0.000 description 1
- 235000019299 calcium glycerylphosphate Nutrition 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- -1 lithium trifluoromethanesulfonyl imide Chemical class 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention provides a preparation method of a perovskite solar cell, in the preparation method, firstly, a metal substrate is provided, namely a metal electrode, the first surface of the metal substrate is treated, the treated first surface structure is used as a first charge transmission layer, and at the moment, the perovskite solar cell with the structure can bear more times of bending due to the fact that the metal substrate and the first charge transmission layer are not separated, and the mechanical life of the perovskite solar cell device is prolonged.
Description
Technical Field
The invention relates to the technical field of photovoltaics, in particular to a preparation method of a perovskite solar cell.
Background
Along with the rapid development of photovoltaic technology, perovskite solar cells with high efficiency and low cost characteristics are paid attention to, have the potential of replacing traditional crystalline silicon cells, and particularly have wide application prospects in the fields of photovoltaic buildings, distributed power generation, portable equipment charging and the like, and become research hotspots in the current photovoltaic field.
The binding force between a metal electrode and an adjacent charge transmission layer in the conventional flexible perovskite solar cell is weak, and the conventional flexible perovskite solar cell cannot bear multiple bending, so that the mechanical life of the flexible perovskite solar cell is influenced.
Disclosure of Invention
In view of the above, the present invention provides a method for preparing a perovskite solar cell, which comprises the following steps:
the preparation method comprises the following steps:
providing a metal substrate; the metal substrate includes a first surface;
processing the first surface of the metal substrate to obtain a first charge transport layer;
and forming a perovskite layer on one side of the first charge transport layer, which is away from the metal substrate.
Optionally, in the above preparation method, the treating the first surface of the metal substrate to obtain a first charge transport layer includes:
and treating the first surface of the metal substrate by adopting a micro-arc oxidation process or an anodic oxidation process to obtain the first charge transport layer.
Optionally, in the above preparation method, the forming a perovskite layer on a side of the first charge transport layer facing away from the metal substrate includes:
preparing perovskite precursor liquid;
spin-coating the perovskite precursor liquid on one side of the first charge transport layer, which is away from the metal substrate, to form a perovskite solution film;
and annealing the perovskite solution film to obtain a perovskite layer.
Optionally, in the above preparation method, the thickness of the first charge transport layer has a value ranging from 50nm to 500nm.
Optionally, in the above preparation method, the material of the metal substrate includes a titanium metal material or an aluminum metal material.
Optionally, in the above preparation method, after the perovskite layer is formed on a side of the first charge transport layer facing away from the metal substrate, the preparation method further includes:
and forming a second charge transport layer on one side of the perovskite layer, which is away from the metal substrate, by adopting a spin coating method.
Optionally, in the above preparation method, the thickness of the second charge transport layer has a value ranging from 30nm to 80nm.
Optionally, in the above preparation method, the material of the second charge transport layer is a spiro-ome material.
Optionally, in the above preparation method, after the forming the second charge transport layer on the perovskite layer side facing away from the metal substrate by using spin coating, the preparation method further includes:
and preparing a transparent electrode on one side of the second charge transport layer, which is far away from the metal substrate, by adopting a vacuum deposition method.
Optionally, in the above preparation method, the transparent electrode is FTO conductive glass.
Compared with the prior art, the invention has the following beneficial effects:
the invention provides a preparation method of a perovskite solar cell, in the preparation method, firstly, a metal substrate is provided, namely a metal electrode, the first surface of the metal substrate is treated, the treated first surface structure is used as a first charge transmission layer, and at the moment, the perovskite solar cell with the structure can bear more times of bending due to the fact that the metal substrate and the first charge transmission layer are not separated, and the mechanical life of the perovskite solar cell device is prolonged.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present invention, and that other drawings can be obtained according to the provided drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic flow chart of a method for manufacturing a perovskite solar cell according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a part of a perovskite solar cell according to an embodiment of the present invention;
fig. 3 is a schematic view of a part of a perovskite solar cell according to another embodiment of the present invention;
FIG. 4 is a schematic view of a portion of a perovskite solar cell according to an embodiment of the invention;
fig. 5 is a schematic flow chart of another method for manufacturing a perovskite solar cell according to an embodiment of the invention;
FIG. 6 is a schematic view of a portion of a perovskite solar cell according to an embodiment of the invention;
fig. 7 is a schematic flow chart of a preparation method of a perovskite solar cell according to an embodiment of the invention;
fig. 8 is a schematic structural diagram of a perovskite solar cell according to an embodiment of the present invention;
fig. 9 is a schematic flow chart of a preparation method of a perovskite solar cell according to an embodiment of the invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.
Referring to fig. 1, fig. 1 is a schematic flow chart of a method for manufacturing a perovskite solar cell according to an embodiment of the invention; referring to fig. 2, fig. 2 is a schematic diagram of a part of a perovskite solar cell according to an embodiment of the invention; the preparation method comprises the following steps:
s101: providing a metal substrate 01; the metal base 01 includes a first surface 01a.
In this step, since the perovskite solar cell in the embodiment of the present invention may be a flexible perovskite solar cell, the metal substrate 01 provided may employ a flexible metal foil; in this embodiment, the metal substrate 01 is used as a metal electrode, that is, compared with the existing flexible perovskite solar cell, the metal electrode is prepared first in this embodiment, and the use of the polymer substrate in the prior art can be avoided by adopting the metal substrate 01, and compared with the existing polymer substrate, the metal substrate 01 can bear a higher annealing temperature, so that the selection range of the material and the preparation process of the subsequent film layer is increased.
Alternatively, in another embodiment of the present invention, the material of the metal substrate 01 includes a titanium metal material or an aluminum metal material.
Specifically, the metal substrate 01 may be a titanium foil, an aluminum foil, or the like, and the metal substrate 01 is exemplified by a titanium foil, and in this case, the titanium foil may be used as the metal electrode, and the material of the metal substrate 01 is not particularly limited and may be set as needed.
S102: the first surface 01a of the metal substrate 01 is treated to obtain a first charge transport layer.
Optionally, in another embodiment of the present invention, referring to fig. 3, fig. 3 is a schematic diagram of a part of a perovskite solar cell according to another embodiment of the present invention; the processing the first surface 01a of the metal substrate 01 to obtain a first charge transport layer 02 includes:
the first surface 01a of the metal substrate 01 is treated by a micro-arc oxidation process or an anodic oxidation process to obtain the first charge transport layer 02.
In the step, taking the metal substrate 01 as a titanium foil in the step S101 as an example, firstly preparing an electrolyte by adopting 0.2mol of calcium acetate and 0.01mol of calcium glycerophosphate; placing a first surface of a titanium foil, namely a first surface 01a of a metal substrate 01, in an electrolyte, applying 270V direct current or pulse voltage to perform micro-arc oxidation on the first surface 01a for three minutes, and then cleaning and drying; at this time, under the micro-arc oxidation process, the oxidized portion of the first surface 01a may be directly used as the first charge transport layer 02, as shown in fig. 2, the thickness of the metal substrate 01 in the first direction N may be H, as shown in fig. 3, after the first charge transport layer 02 is obtained, the thicknesses of the metal substrate 01 and the first charge transport layer 02 in the first direction N remain H, that is, in this embodiment, the first charge transport layer 02 directly adopts a portion of the oxidized metal substrate, in this structure, the separation problem between the first charge transport layer 02 and the metal substrate 01 does not exist, and since the metal substrate 01 is used as a metal electrode, the problem of weak bonding force between the metal electrode and the charge transport layer is solved, and the perovskite solar cell with this structure can bear more times of bending, so as to improve the mechanical life of the perovskite solar cell device.
It should be noted that, the first charge transport layer 02 is prepared on the first surface 01a of the metal substrate 01 by using a micro-arc oxidation process or an anodic oxidation process, and the obtained first charge transport layer 02 is an inorganic porous structure, and the inorganic porous structure can improve the uniformity of the thickness of the subsequent film layer. The method for treating the first surface 01a of the metal substrate 01 includes, but is not limited to, a micro-arc oxidation process or an anodic oxidation process, and in addition, the first charge transport layer 02 is prepared by adopting the micro-arc oxidation process, which is lower in preparation cost compared with the existing magnetron sputtering.
Optionally, in another embodiment of the present invention, the thickness of the first charge transport layer 02 ranges from 50nm to 500nm.
Specifically, the thickness of the first charge transport layer 02 ranges from 50nm to 500nm, including the end point values, for example, the thickness of the first charge transport layer 02 may be 50nm or 220nm or 450nm, etc.; the thickness of the first charge transport layer 02 is not particularly limited.
S103: a perovskite layer is formed on the side of the first charge transport layer 02 facing away from the metal substrate 01.
Optionally, in another embodiment of the present invention, referring to fig. 4, fig. 4 is a schematic diagram of a part of a perovskite solar cell according to an embodiment of the present invention; referring to fig. 5, fig. 5 is a schematic flow chart of another method for manufacturing a perovskite solar cell according to an embodiment of the invention; the forming of the perovskite layer 03 on the side of the first charge transport layer 02 facing away from the metal substrate 01 includes:
s201: preparing perovskite precursor liquid.
In this step, 0.047g CsBr, 0.1856g FAI and 0.5993g PbI were first weighed 2 As a solute, 1ml of a mixture of Dimethylformamide (DMF) and Dimethylsulfoxide (DMSO) was then prepared, and the volume ratio of DMF to DMSO was 3: and 1, taking the solution as a solvent, mixing the solute with the solution, and uniformly stirring to obtain the perovskite precursor liquid.
S202: spin-coating the perovskite precursor solution on the side of the first charge transport layer 02 facing away from the metal substrate 01 to form a perovskite solution film.
In this step, the perovskite precursor solution configured in step S201 is spin-coated on the side of the first charge transport layer 02 facing away from the metal substrate 01 by using a spin-coating process, wherein the spin-coating process is divided into two steps, i.e., spin-coating at 1000 rpm for 10 seconds, spin-coating at 4000 rpm for 30 seconds, and dropping ethyl acetate as an antisolvent at 20 seconds of spin-coating at 4000 rpm, and the perovskite solution film is obtained after spin-coating is completed.
Since the second charge transport layer 02 formed by the micro-arc oxidation process or the anodic oxidation process in step S102 has an inorganic porous structure, this structure can improve the wettability of the perovskite precursor liquid, so that a perovskite solution film having a more uniform thickness can be formed.
S203: and annealing the perovskite solution film to obtain the perovskite layer 03.
In this step, the structure obtained in step S202 was placed on a heating table, and annealed at 150 ℃ for 15 minutes, thereby obtaining the perovskite layer 03. The temperature, time, rotation speed, mass, and volume of the perovskite layer 03 are merely examples, and are not particularly limited.
Optionally, in another embodiment of the present invention, referring to fig. 6, fig. 6 is a schematic view of a part of a perovskite solar cell according to another embodiment of the present invention; referring to fig. 7, fig. 7 is a schematic flow chart of a preparation method of a perovskite solar cell according to an embodiment of the invention; after the perovskite layer 03 is formed on the side, facing away from the metal substrate 01, of the first charge transport layer 02, the preparation method further comprises:
s104: a second charge transport layer 04 is formed on the side of the perovskite layer 03 facing away from the metal substrate 01 by spin coating.
In this step, the second charge transport layer precursor solution is first prepared, and the second charge transport layer 04 is prepared according to the material required.
Alternatively, in another embodiment of the present invention, the material of the second charge transport layer 04 is a spiro-ome material.
Specifically, the spiro-OMeTAD material is a solid hole transport material, and is prepared by using 72.3mg of spiro-OMeTAD material, 1mL of chlorobenzene, 17.5 mu L of lithium salt solution and 28.8 mu L of tributyl phosphate (TBP), and preparing a spiro-OMeTAD precursor solution with the mass fraction of 7%, wherein 17.5 mu L of lithium salt solution can be prepared by weighing 52mg of lithium trifluoromethanesulfonyl imide (Li-TFSI) and dissolving in 100 mu L of acetonitrile; spin-coating a spiro-OMeTAD precursor solution with the mass fraction of 7% on one side of the perovskite layer 03, which is away from the metal substrate 01, by adopting a spin-coating method, so as to obtain a second charge transport layer 04; note that the material of the second charge transport layer 04 includes, but is not limited to, a spira-ome material.
Optionally, in another embodiment of the present invention, the thickness of the second charge transport layer 04 ranges from 30nm to 80nm.
Specifically, the thickness of the second charge transport layer 04 ranges from 30nm to 80nm, including the end point values, for example, in the first direction N, the thickness of the second charge transport layer 04 may be 30nm or 50nm or 70nm, etc.; wherein, when the spin-coating speed was 3000rpm and the time was 30s, the thickness of the obtained second charge transport layer 04 was 30nm. The thickness of the second charge transport layer 04 is not particularly limited.
Optionally, in another embodiment of the present invention, referring to fig. 8, fig. 8 is a schematic structural diagram of a perovskite solar cell according to an embodiment of the present invention; referring to fig. 9, fig. 9 is a schematic flow chart of a method for manufacturing a perovskite solar cell according to an embodiment of the invention; after the second charge transport layer 04 is formed on the side, facing away from the metal substrate 01, of the perovskite layer 03 by adopting a spin coating method, the preparation method further comprises the following steps:
s105: a transparent electrode 05 is prepared on the side of the second charge transport layer 04 facing away from the metal substrate 01 by vacuum deposition.
In this step, a transparent electrode 05 is prepared on the side of the second charge transport layer 04 facing away from the metal substrate 01 by vacuum deposition as a top electrode, and a complete flexible perovskite solar cell can be formed.
Alternatively, in another embodiment of the present invention, the transparent electrode 05 is FTO conductive glass.
Specifically, the transparent electrode 05 may be FTO conductive glass, and its thickness in the first direction N includes, but is not limited to, 100nm. The transparent electrode 05 includes, but is not limited to, FTO conductive glass.
In the preparation method, the first surface 01a of the metal substrate 01 is treated, and the treated first surface structure is used as the first charge transmission layer 02, so that the perovskite solar cell with the structure can bear more times of bending because the metal substrate 01 and the first charge transmission layer 02 are not separated, and the mechanical life of the perovskite solar cell device is prolonged.
The above describes in detail a preparation method of perovskite solar cell provided by the invention, and specific examples are applied herein to illustrate the principles and embodiments of the invention, and the above examples are only used to help understand the method and core idea of the invention; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in accordance with the ideas of the present invention, the present description should not be construed as limiting the present invention in view of the above.
It should be noted that, in the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described as different from other embodiments, and identical and similar parts between the embodiments are all enough to be referred to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant points refer to the description of the method section.
It is further noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include, or is intended to include, elements inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A method of manufacturing a perovskite solar cell, the method comprising:
providing a metal substrate; the metal substrate includes a first surface;
processing the first surface of the metal substrate to obtain a first charge transport layer;
and forming a perovskite layer on one side of the first charge transport layer, which is away from the metal substrate.
2. The method of claim 1, wherein the treating the first surface of the metal substrate to obtain a first charge transport layer comprises:
and treating the first surface of the metal substrate by adopting a micro-arc oxidation process or an anodic oxidation process to obtain the first charge transport layer.
3. The method of claim 1, wherein forming a perovskite layer on a side of the first charge transport layer facing away from the metal substrate comprises:
preparing perovskite precursor liquid;
spin-coating the perovskite precursor liquid on one side of the first charge transport layer, which is away from the metal substrate, to form a perovskite solution film;
and annealing the perovskite solution film to obtain a perovskite layer.
4. The method of claim 1, wherein the thickness of the first charge transport layer has a value in the range of 50nm to 500nm.
5. The method of claim 1, wherein the material of the metal substrate comprises a titanium metal material or an aluminum metal material.
6. The method of claim 1, wherein after forming the perovskite layer on a side of the first charge transport layer facing away from the metal substrate, the method further comprises:
and forming a second charge transport layer on one side of the perovskite layer, which is away from the metal substrate, by adopting a spin coating method.
7. The method of claim 6, wherein the thickness of the second charge transport layer has a value in the range of 30nm to 80nm.
8. The method of claim 6, wherein the material of the second charge transport layer is a spiro-ome material.
9. The method according to claim 6, wherein after forming a second charge transport layer on a side of the perovskite layer facing away from the metal substrate by spin coating, the method further comprises:
and preparing a transparent electrode on one side of the second charge transport layer, which is far away from the metal substrate, by adopting a vacuum deposition method.
10. The method of claim 9, wherein the transparent electrode is FTO conductive glass.
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| CN202310562108.9A CN116669502A (en) | 2023-05-18 | 2023-05-18 | Preparation method of perovskite solar cell |
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| CN202310562108.9A CN116669502A (en) | 2023-05-18 | 2023-05-18 | Preparation method of perovskite solar cell |
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