CN116667107A - Spin terahertz emitter and chiral regulation and control method and preparation method thereof - Google Patents
Spin terahertz emitter and chiral regulation and control method and preparation method thereof Download PDFInfo
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Abstract
The application discloses a spin terahertz transmitter and a chiral regulation method and a preparation method thereof, and belongs to the field of terahertz transmission. The spin terahertz emitter is of a three-layer structure comprising a ferromagnetic material layer, a non-ferromagnetic material layer and an antiferromagnetic layer, wherein the antiferromagnetic layer adopts NiO single crystal antiferromagnetic material with preset crystalline phase, crSb or Mn 3 Sn, under the irradiation of femtosecond laser, the antiferromagnetic layer generates laser impact magnetic moment, the laser impact magnetic moment precesses to generate spin polarization flow, and the spin polarization flow is injected into the nonferromagnetic layer to generate transient charge flow, so that terahertz is radiated, and high-efficiency spin terahertz radiation is realized; the magnetic moment direction of the ferromagnetic material layer in the spin terahertz transmitter is further turned over by rotating the direction of an external magnetic field or by spin orbit torque effect, so that the high-efficiency regulation and control of terahertz chirality are realized.
Description
Technical Field
The application relates to the field of terahertz emission, in particular to a spin terahertz emitter, a chiral regulation method and a preparation method thereof.
Background
For terahertz emission, currently common THz sources are photoconductive antenna terahertz sources and other spin terahertz sources. The terahertz source of the photoconductive antenna consists of a semiconductor substrate and electrodes, and the working principle of the terahertz source is that a beam of ultrashort pulse laser is focused on a semiconductor material between the electrodes, if the energy of laser photons is larger than the energy gap width of the semiconductor substrate material, electrons can be excited on a conduction band to form photon-generated carriers, the photon-generated carriers move under the action of an offset electric field, and instantaneously-changed current is formed in the laser penetration depth range so as to radiate terahertz waves; the spin terahertz source is generally composed of a ferromagnetic material/nonferromagnetic material heterojunction, and the working principle of the spin terahertz source is that when a femtosecond laser pulse irradiates a ferromagnetic/nonferromagnetic heterogeneous double-layer film, an ultra-fast self-rotational flow is excited in a ferromagnetic layer, and when spin flow enters a heavy metal layer, the spin flow is converted into instant charge flow by an anti-spin Hall effect, so that terahertz is radiated.
For a spin terahertz emission structure, the university of Shanghai in 2018 gold diamond teaching proposes an efficient terahertz emission chip based on electron spin and a preparation method thereof, wherein a ferromagnetic layer/a metal layer/an oxide barrier layer/a pinning layer/an antiferromagnetic pinning layer are used as a basic emission structure, and the regulation and control of terahertz radiation efficiency, bandwidth and polarization state are realized by controlling different materials and film thicknesses in a composite film structure on the basis of no external magnetic field application; in 2020, in the structure of the ferromagnetic layer/the nonferromagnetic layer/the ferromagnetic layer/the antiferromagnetic pinning layer of the university of Ognsburgh, germany, the control of the terahertz amplitude is realized by changing the external magnetic field direction and utilizing the tunneling magneto-resistance effect.
Terahertz was generated for antiferromagnetic/nonferromagnetic heterojunction, at university of bloom at Mn in 2019 3 Terahertz is emitted in Sn/Pt heterojunction. The university of south Beijing 2021 successfully emitted spin terahertz in the Nio (111)/Pt (W) heterojunction and has demonstrated that this emission is independent of external magnetic fields; 2022, paris saxophone Lei Da, university of Berlin, germany, cooperated with NiO (001)/PtTerahertz radiation is realized.
Whereas the prior art has the following disadvantages:
1. at present, the antiferromagnetic terahertz experiments are focused on the possibility of field-free emission, and chiral terahertz emission is not concerned;
2. there is no terahertz emission study of antiferromagnetic/ferromagnetic/nonferromagnetic structures at present;
3. there is no current study on this structure using spin-orbit torque flipping to control the magnetic moment.
Disclosure of Invention
The application aims to provide a spin terahertz transmitter, a chiral regulation method and a preparation method thereof, which can realize terahertz efficient radiation based on spin materials and efficient and rapid chiral regulation.
In order to achieve the above object, the present application provides the following solutions:
a spin terahertz transmitter, the spin terahertz transmitter comprising: a ferromagnetic material layer, a non-ferromagnetic material layer, and an antiferromagnetic layer;
the non-ferromagnetic material layer is arranged between the ferromagnetic material layer and the antiferromagnetic layer;
the antiferromagnetic layer adopts NiO single crystal antiferromagnetic material with preset crystal phase, crSb or Mn 3 Sn；
Under the irradiation of femtosecond laser, the antiferromagnetic layer generates laser impact magnetic moment, the laser impact magnetic moment precesses to generate spin polarization flow, and the spin polarization flow is injected into the nonferromagnetic layer to generate transient charge flow so as to radiate terahertz.
A chiral tuning method for a spin terahertz transmitter, the chiral tuning method applying the spin terahertz transmitter, the chiral tuning method comprising:
the magnetic moment direction of the ferromagnetic material layer in the spin terahertz transmitter is turned over by rotating the direction of an external magnetic field or by spin orbit torque effect, so that the regulation and control of terahertz chirality are realized.
A method of fabricating a spin terahertz transmitter, comprising:
growing ferromagnetic films on substrates, or growing antiferromagneticsA film; the antiferromagnetic film is a NiO film, a CrSb film or Mn film 3 A Sn thin film;
growing a nonferromagnetic film on the ferromagnetic film or the antiferromagnetic film;
growing an antiferromagnetic film or a ferromagnetic film on the nonferromagnetic film to form a trilayer film;
and annealing the three layers of films in an annealing furnace to obtain the spin terahertz transmitter comprising the ferromagnetic material layer, the non-ferromagnetic material layer and the antiferromagnetic layer.
According to the specific embodiment provided by the application, the application discloses the following technical effects:
the application discloses a spin terahertz emitter, a chiral regulation method and a preparation method thereof, wherein the spin terahertz emitter is of a three-layer structure comprising a ferromagnetic material layer, a nonferromagnetic material layer and an antiferromagnetic layer, and the antiferromagnetic layer adopts NiO monocrystal antiferromagnetic material with a preset crystalline phase, crSb or Mn 3 Sn, under the irradiation of femtosecond laser, the antiferromagnetic layer generates laser impact magnetic moment, the laser impact magnetic moment precesses to generate spin polarization flow, and the spin polarization flow is injected into the nonferromagnetic layer to generate transient charge flow, so that terahertz is radiated, and high-efficiency spin terahertz radiation is realized; the magnetic moment direction of the ferromagnetic material layer in the spin terahertz transmitter is further turned over by rotating the direction of an external magnetic field or by spin orbit torque effect, so that the high-efficiency regulation and control of terahertz chirality are realized.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions of the prior art, the drawings that are needed in the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 shows a magnetic field angle of 90 degrees in an external magnetic field of a spin terahertz transmitter according to a second embodiment of the present application ° A terahertz wave regulation schematic diagram;
FIG. 2 is a diagram of a spin-too-low for a spin-too-low headThe angle of the magnetic field of the hertz transmitter in the external magnetic field is changed 180 relative to the direction of the magnetic field of fig. 1 ° A schematic diagram of the regulation and control of the terahertz waves;
FIG. 3 shows another embodiment of the present application provides a spin terahertz transmitter with a magnetic field angle of 90 degrees in an external magnetic field ° A terahertz wave regulation schematic diagram;
FIG. 4 shows a change of 180 in the magnetic field angle of the external magnetic field of another spin terahertz transmitter according to the second embodiment of the present application with respect to the magnetic field direction of FIG. 3 ° A schematic diagram of the regulation and control of the terahertz waves;
fig. 5 is a schematic diagram of terahertz wave modulation and control of a spin terahertz transmitter by using a spin orbit torque effect provided in the second embodiment of the present application;
fig. 6 is a schematic diagram of terahertz wave modulation and control of another spin terahertz transmitter by using the spin orbit torque effect provided in the second embodiment of the present application;
fig. 7 is a flowchart of a preparation method of a spin terahertz transmitter according to a third embodiment of the present application.
Detailed Description
The following description of the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
The application aims to provide a spin terahertz transmitter, a chiral regulation method and a preparation method thereof, which can realize terahertz efficient radiation based on spin materials and efficient and rapid chiral regulation.
In order that the above-recited objects, features and advantages of the present application will become more readily apparent, a more particular description of the application will be rendered by reference to the appended drawings and appended detailed description.
Example 1
The embodiment of the application provides a spin terahertz transmitter, which comprises the following components: ferromagnetic material layer, nonferromagnetic materialA layer and an antiferromagnetic layer. The non-ferromagnetic material layer is disposed between the ferromagnetic material layer and the antiferromagnetic layer. The antiferromagnetic layer adopts NiO monocrystal antiferromagnetic material with preset crystal phase, crSb or Mn 3 Sn。
Under the irradiation of femtosecond laser, the antiferromagnetic layer generates laser impact magnetic moment, the laser impact magnetic moment precesses to generate spin polarization flow, and the spin polarization flow is injected into the nonferromagnetic layer to generate transient charge flow so as to radiate terahertz.
The spin terahertz transmitter does not depend on the direction of an external magnetic field, namely the amplitude and the phase of the terahertz radiation are unchanged when the direction of the external magnetic field changes. Antiferromagnetic/nonferromagnetic layer heterojunctions such as NiO with specific crystalline phases can achieve efficient spin terahertz radiation, such as NiO (111)/Pt, niO (001)/Pt, mn 3 Sn(0001)/Pt、CrSb(111)/Pt。
Illustratively, the ferromagnetic material layer is a two-dimensional ferromagnetic material or a ferromagnetic metal. The non-ferromagnetic material layer adopts a topological material, and the topological material comprises a topological insulator, a topological semi-metal or a heavy metal with a spin hall angle larger than a hall angle threshold value.
The application selects a three-layer structure of a ferromagnetic layer/a non-ferromagnetic layer/an antiferromagnetic layer as a spin terahertz emitter, wherein the antiferromagnetic layer adopts NiO monocrystal antiferromagnetic material with preset crystalline phase, crSb or Mn 3 Sn, a ferromagnetic layer adopts two-dimensional ferromagnetic materials (FexGeTe 2, crTe 2), ferromagnetic metals (Co, fe, ni and the like and alloys thereof), a non-ferromagnetic layer adopts topological materials, such as topological insulators (Bi 2Se3, bi2Te3, bixSb1-x, sb2Te3, (BixSb 1-x) 2Te3 and alloys thereof), topological semi-metals (PtTe 2, WTE 2), heavy metals with larger spin Hall angles (W, ta, pt and the like), and a spin terahertz source of the three-layer heterojunction is prepared. The material selected by the application has wide application temperature range, stable material property in the temperature range of 0K-300K, can realize high-efficiency spin terahertz radiation of large bandwidth, and can ensure the reliability of devices.
Further, the spin terahertz transmitter further includes: a substrate. The substrate is disposed under the ferromagnetic material layer or antiferromagnetic layer.
A spin terahertz transmitter shown in fig. 1 includes, in order from bottom to top, a sapphire substrate, a ferromagnetic material layer, a non-ferromagnetic material layer, and an antiferromagnetic layer. Fig. 2 shows another spin terahertz transmitter including, in order from bottom to top, a sapphire substrate, an antiferromagnetic layer, a non-ferromagnetic material layer, and a ferromagnetic material layer.
Example two
The embodiment of the application provides a chiral regulation method of a spin terahertz transmitter, which applies the spin terahertz transmitter of the embodiment I and comprises the following steps:
the magnetic moment direction of the ferromagnetic material layer in the spin terahertz transmitter is turned over by rotating the direction of an external magnetic field or by spin orbit torque effect, so that the regulation and control of terahertz chirality are realized.
Illustratively, flipping the magnetic moment direction of a ferromagnetic material layer in a spin terahertz transmitter by spin orbit torque effect specifically includes: applying-30 MA/cm on a spin terahertz emitter 2 ～30MA/cm 2 180 for the magnetic moment direction of the ferromagnetic material layer in a spin terahertz transmitter ° And (5) overturning.
Illustratively, the magnetic moment direction of the ferromagnetic material layer in the spin terahertz transmitter is flipped by rotating the external magnetic field direction, which specifically includes: and applying an external magnetic field of-200 mT to 200mT on the spin terahertz transmitter, and rotating the external magnetic field to turn over the magnetic moment direction of the ferromagnetic material layer in the spin terahertz transmitter.
The spin terahertz transmitter is put into a terahertz time-domain spectrum system with variable temperature (0-300K) for performance test, and under the irradiation of 800nm or 1560nm femtosecond laser, the spin terahertz transmitter passes through the direction of a rotating magnetic field or applies-30 MA/cm 2 ～30MA/cm 2 The current of the (2) further turns over the magnetic moment of the ferromagnetic layer through the spin orbit moment effect, and the terahertz chirality is regulated and controlled.
In fig. 1 to 4, the connection line direction of the two electrodes is the x direction, the femto second laser emission direction under the spin terahertz emitter is the z direction, and the connection line direction of the external magnetic field NS is the y direction. As can be seen from fig. 1 and 2, the magnetic field direction changes 180 ° Realize the pair ofTerahertz polarization is used for regulating and controlling left-handed and right-handed rotation. As can be seen from fig. 3 and 4, the magnetic field direction changes 180 ° The control of the left-handed right-handed terahertz polarization is realized.
Fig. 5 and 6 illustrate terahertz wave modulation of two spin terahertz emitters by the spin orbit moment effect.
The application is based on the property of non-colinear antiferromagnetic, firstly, taking 111 crystal phase as an example for antiferromagnetic film with specific crystal phase, under the irradiation of femtosecond laser, the antiferromagnetic film generates laser impact magnetic moment M through magnetic difference frequency, and the M precesses to generate spin polarization flow J s1 After spin flow is injected into the adjacent non-ferromagnetic layer, transient charge flow J is generated due to the anti-spin Hall effect c The terahertz is radiated further, and the radiation method does not depend on the direction of an external magnetic field, namely, when the direction of the external magnetic field is changed, the amplitude and the phase of the terahertz are not changed.
In the application, when the magnetic moment direction of the ferromagnetic layer is changed by changing the external magnetic field direction and the spin orbit moment effect, the terahertz phase radiated by the ferromagnetic/nonferromagnetic heterojunction is correspondingly changed. Picosecond charge flow J generated by a ferromagnetic/nonferromagnetic heterojunction when the direction of magnetic moment is changed by rotating magnetic field c1 Picosecond charge flow J generated by antiferromagnetic/nonferromagnetic heterojunction c2 The terahertz wave with a certain phase difference in the x direction and the y direction can be radiated by generating an included angle with the value of the included angle being the rotation angle of the magnetic field, wherein:
when the magnetic field angle of the external magnetic field is 0 ° Or 180 degrees ° When the terahertz wave emitted by the spin terahertz transmitter is linearly polarized.
When the magnetic field angle of the external magnetic field is greater than 0 ° Less than 180 ° And is not equal to 90 ° When the magnetic field angle of the external magnetic field is greater than 180 ° Less than 360 ° And is not equal to 270 ° The spin terahertz transmitter radiates obliquely elliptical polarized terahertz waves.
When the magnetic field angle of the external magnetic field is equal to 90 ° Or 270. Fig ° And picosecond charge flow J generated by ferromagnetic/nonferromagnetic heterojunction c1 Picosecond charge flow J generated by antiferromagnetic/nonferromagnetic heterojunction c2 When the two polarization states are not equal, the spin terahertz transmitter radiates positive elliptical polarization; the ferromagnetic/nonferromagnetic heterojunction is a heterojunction formed by a ferromagnetic material layer and a nonferromagnetic material layer; the antiferromagnetic/nonferromagnetic heterojunction is a heterojunction formed by an antiferromagnetic layer and a nonferromagnetic material layer.
When the magnetic field angle of the external magnetic field is equal to 90 ° Or 270. Fig ° And picosecond charge flow J generated by ferromagnetic/nonferromagnetic heterojunction c1 Picosecond charge flow J generated by antiferromagnetic/nonferromagnetic heterojunction c2 When equal, the spin terahertz transmitter radiates circularly polarized terahertz waves.
When the exchange bias of the external magnetic field and the antiferromagnetic layer has an included angle, the external magnetic field rotates 180 ° And then, the terahertz waves with opposite rotation directions are regulated, so that the transformation of the left (right) rotation (elliptic) polarization to the right (left) rotation (elliptic) polarization can be realized.
Similarly, if spin-orbit torque effect is used to 180 degrees of magnetic moment of ferromagnetic layer ° The spin direction of the terahertz waves radiated can be changed by overturning, and the spin terahertz waves can be rapidly and efficiently regulated and controlled at the transmitting end. The application can realize multi-means high-efficiency terahertz chiral regulation.
The application is greatly innovated in the aspects of terahertz emission mode, regulation mode and the like, and can realize the on-chip terahertz ultra-fast low-consumption regulation.
Example III
The embodiment of the application provides a preparation method of a spin terahertz transmitter, which is shown in fig. 7 and comprises the following steps:
step 1: growing a ferromagnetic thin film, or growing an antiferromagnetic thin film, on a substrate; the antiferromagnetic film is a NiO film, a CrSb film or Mn film 3 And a Sn film.
Step 2: a non-ferromagnetic film is grown on the ferromagnetic film or the antiferromagnetic film.
Step 3: and growing an antiferromagnetic film or a ferromagnetic film on the nonferromagnetic film to form a tri-layer film.
Step 4: and annealing the three layers of films in an annealing furnace to obtain the spin terahertz transmitter comprising the ferromagnetic material layer, the non-ferromagnetic material layer and the antiferromagnetic layer.
In one example, the ferromagnetic thin film has a grown thickness in the range of 2nm to 10nm. The growing thickness of the antiferromagnetic film is 15 nm-100 nm. The growing thickness of the non-ferromagnetic film ranges from 2nm to 10nm.
The method for growing the ferromagnetic film, the antiferromagnetic film and the nonferromagnetic film is one of molecular beam epitaxy, magnetron sputtering and pulse laser deposition.
The preparation method of the spin terahertz emitter comprises the following detailed procedures:
step 1: firstly, a ferromagnetic film with the thickness ranging from 15nm to 100nm, such as a two-dimensional ferromagnetic material (FexGeTe 2, crTe 2), ferromagnetic metal (Co, fe, ni and the like and alloys thereof) or an antiferromagnetic film with the thickness ranging from 15nm to 100nm is grown on a double-throw aluminum oxide substrate or a double-throw magnesium oxide substrate by a growth method such as molecular beam epitaxy, magnetron sputtering or pulse laser deposition.
Step 2: non-ferromagnetic films with thickness ranging from 2nm to 10nm, such as topological insulators (Bi 2Se3, bi2Te3, bixSb1-x, sb2Te3, (BixSb 1-x) 2Te3 and alloys thereof), topological semi-metals (PtTe 2, WTE 2), heavy metals with larger spin hall angles (W, ta, pt and the like), are grown by a growth method such as molecular beam epitaxy, magnetron sputtering or pulse laser deposition.
Step 3: an antiferromagnetic film with the thickness ranging from 10nm to 200nm or a ferromagnetic film with the thickness ranging from 2nm to 10nm is grown by a growth method such as molecular beam epitaxy, magnetron sputtering or pulse laser deposition, and the like, such as two-dimensional ferromagnetic materials (FexGeTe 2, crTe 2), ferromagnetic metals (Co, fe, ni, and the like, and alloys thereof) are grown.
Step 4: the film was annealed at 800 ℃ in an annealing furnace, and a magnetic field of 1T or more was applied in the x direction.
The application provides a spin terahertz emission mechanism of an antiferromagnetic/nonferromagnetic/ferromagnetic heterojunction, which realizes terahertz efficient radiation and efficient and rapid chiral regulation based on spin materials based on a common spin terahertz emission mechanism, an antiferromagnetic terahertz emission mechanism and a spin orbit moment effect.
In the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, and identical and similar parts between the embodiments are all enough to refer to each other.
The principles and embodiments of the present application have been described herein with reference to specific examples, the description of which is intended only to assist in understanding the methods of the present application and the core ideas thereof; also, it is within the scope of the present application to be modified by those of ordinary skill in the art in light of the present teachings. In view of the foregoing, this description should not be construed as limiting the application.
Claims (10)
1. A spin terahertz transmitter, characterized in that the spin terahertz transmitter comprises: a ferromagnetic material layer, a non-ferromagnetic material layer, and an antiferromagnetic layer;
the non-ferromagnetic material layer is arranged between the ferromagnetic material layer and the antiferromagnetic layer;
the antiferromagnetic layer adopts NiO single crystal antiferromagnetic material with preset crystal phase, crSb or Mn 3 Sn；
Under the irradiation of femtosecond laser, the antiferromagnetic layer generates laser impact magnetic moment, the laser impact magnetic moment precesses to generate spin polarization flow, and the spin polarization flow is injected into the nonferromagnetic layer to generate transient charge flow so as to radiate terahertz.
2. The spin terahertz transmitter according to claim 1, wherein the ferromagnetic material layer is a two-dimensional ferromagnetic material or a ferromagnetic metal;
the non-ferromagnetic material layer adopts a topological material, and the topological material comprises a topological insulator, a topological semi-metal or a heavy metal with a spin hall angle larger than a hall angle threshold value.
3. The spin terahertz transmitter of claim 1, further comprising: a substrate;
the substrate is disposed under a layer of ferromagnetic material or an antiferromagnetic layer.
4. A method for chiral tuning of a spin terahertz transmitter, wherein the method for chiral tuning uses the spin terahertz transmitter of any one of claims 1 to 3, the method for chiral tuning comprising:
the magnetic moment direction of the ferromagnetic material layer in the spin terahertz transmitter is turned over by rotating the direction of an external magnetic field or by spin orbit torque effect, so that the regulation and control of terahertz chirality are realized.
5. The method for chiral tuning of a spin terahertz transmitter of claim 4, wherein the flipping of the magnetic moment direction of the ferromagnetic material layer in the spin terahertz transmitter by spin orbit torque effect specifically comprises:
applying-30 MA/cm on a spin terahertz emitter 2 ～30MA/cm 2 180 for the magnetic moment direction of the ferromagnetic material layer in a spin terahertz transmitter ° And (5) overturning.
6. The method for chiral tuning of a spin terahertz transmitter of claim 4, wherein the direction of the magnetic moment of the ferromagnetic material layer in the spin terahertz transmitter is flipped by rotating the direction of the external magnetic field, specifically comprising:
and applying an external magnetic field of-200 mT to 200mT on the spin terahertz transmitter, and rotating the external magnetic field to turn over the magnetic moment direction of the ferromagnetic material layer in the spin terahertz transmitter.
7. The method for chiral tuning of a spin terahertz transmitter of claim 6,
when the magnetic field angle of the external magnetic field is 0 ° Or 180 degrees ° When the terahertz waves emitted by the spin terahertz emitter are linearly polarized;
when the magnetic field angle of the external magnetic field is greater than 0 ° Less than 180 ° And is not equal to 90 ° When the magnetic field angle of the external magnetic field is greater than 180 ° Less than 360 ° And is not equal to 270 ° When the spin terahertz transmitter radiates obliquely elliptical polarized terahertz waves;
when the magnetic field angle of the external magnetic field is equal to 90 ° Or 270. Fig ° And picosecond charge flow J generated by ferromagnetic/nonferromagnetic heterojunction c1 Picosecond charge flow J generated by antiferromagnetic/nonferromagnetic heterojunction c2 When the two polarization states are not equal, the spin terahertz transmitter radiates positive elliptical polarization; the ferromagnetic/nonferromagnetic heterojunction is a heterojunction formed by a ferromagnetic material layer and a nonferromagnetic material layer; the antiferromagnetic/nonferromagnetic heterojunction is a heterojunction formed by an antiferromagnetic layer and a nonferromagnetic material layer;
when the magnetic field angle of the external magnetic field is equal to 90 ° Or 270. Fig ° And picosecond charge flow J generated by ferromagnetic/nonferromagnetic heterojunction c1 Picosecond charge flow J generated by antiferromagnetic/nonferromagnetic heterojunction c2 When the two types of the terahertz waves are equal, the spin terahertz transmitter radiates circularly polarized terahertz waves;
when the exchange bias of the external magnetic field and the antiferromagnetic layer has an included angle, the external magnetic field rotates 180 ° And then, regulating and controlling terahertz waves with opposite rotation directions.
8. A method for manufacturing a spin terahertz transmitter, comprising:
growing a ferromagnetic thin film, or growing an antiferromagnetic thin film, on a substrate; the antiferromagnetic film is a NiO film, a CrSb film or Mn film 3 A Sn thin film;
growing a nonferromagnetic film on the ferromagnetic film or the antiferromagnetic film;
growing an antiferromagnetic film or a ferromagnetic film on the nonferromagnetic film to form a trilayer film;
and annealing the three layers of films in an annealing furnace to obtain the spin terahertz transmitter comprising the ferromagnetic material layer, the non-ferromagnetic material layer and the antiferromagnetic layer.
9. The method of manufacturing a spin terahertz transmitter according to claim 8,
the growing thickness range of the ferromagnetic film is 2 nm-10 nm;
the growing thickness range of the antiferromagnetic film is 15 nm-100 nm;
the growing thickness range of the non-ferromagnetic film is 2 nm-10 nm.
10. The method of claim 8, wherein the method of growing the ferromagnetic thin film, the antiferromagnetic thin film and the nonferromagnetic thin film is one of molecular beam epitaxy, magnetron sputtering and pulsed laser deposition.
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| CN117665411B (en) * | 2024-01-31 | 2024-04-05 | 中国电子科技集团公司第十五研究所 | Magnetic field enhanced low-orbit satellite 6G signal detector |
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