CN116657122A - Process for chemically depositing silver - Google Patents
Process for chemically depositing silver Download PDFInfo
- Publication number
- CN116657122A CN116657122A CN202310644006.1A CN202310644006A CN116657122A CN 116657122 A CN116657122 A CN 116657122A CN 202310644006 A CN202310644006 A CN 202310644006A CN 116657122 A CN116657122 A CN 116657122A
- Authority
- CN
- China
- Prior art keywords
- seconds
- copper
- silver
- microetching
- degrees
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 35
- 239000004332 silver Substances 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000000151 deposition Methods 0.000 title abstract description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 33
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052802 copper Inorganic materials 0.000 claims abstract description 16
- 239000010949 copper Substances 0.000 claims abstract description 16
- 239000000126 substance Substances 0.000 claims abstract description 12
- 238000004140 cleaning Methods 0.000 claims abstract description 11
- 239000003973 paint Substances 0.000 claims abstract description 8
- 239000002253 acid Substances 0.000 claims abstract description 7
- 238000001556 precipitation Methods 0.000 claims abstract description 7
- 238000006073 displacement reaction Methods 0.000 claims abstract description 6
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000005751 Copper oxide Substances 0.000 claims abstract description 4
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 4
- 229910000431 copper oxide Inorganic materials 0.000 claims abstract description 4
- 238000005530 etching Methods 0.000 claims abstract description 4
- 239000004519 grease Substances 0.000 claims abstract description 4
- 238000009736 wetting Methods 0.000 claims abstract description 4
- 239000002689 soil Substances 0.000 claims description 9
- 230000002378 acidificating effect Effects 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 4
- 238000013459 approach Methods 0.000 claims description 3
- 239000012530 fluid Substances 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 238000007772 electroless plating Methods 0.000 claims 1
- 238000003466 welding Methods 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract description 3
- 238000013461 design Methods 0.000 abstract description 3
- 238000012423 maintenance Methods 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 abstract description 2
- 238000012360 testing method Methods 0.000 description 14
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 7
- 238000012545 processing Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 238000005303 weighing Methods 0.000 description 2
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- 229910004878 Na2S2O4 Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- YCKOAAUKSGOOJH-UHFFFAOYSA-N copper silver Chemical compound [Cu].[Ag].[Ag] YCKOAAUKSGOOJH-UHFFFAOYSA-N 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 229910000366 copper(II) sulfate Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910001923 silver oxide Inorganic materials 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- JVBXVOWTABLYPX-UHFFFAOYSA-L sodium dithionite Chemical compound [Na+].[Na+].[O-]S(=O)S([O-])=O JVBXVOWTABLYPX-UHFFFAOYSA-L 0.000 description 1
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
- C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
- C23C18/1837—Multistep pretreatment
- C23C18/1844—Multistep pretreatment with use of organic or inorganic compounds other than metals, first
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/42—Coating with noble metals
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/20—Recycling
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
- ing And Chemical Polishing (AREA)
Abstract
The invention discloses a process technology for chemically depositing silver, which comprises the following steps: s1: acid cleaning: removing foreign matters on the board surface such as copper oxide, grease and the like by acidity (without damaging green paint); s2: microetching: an improved microetching agent for etching the copper surface to remove dirt; s3: presoaking: removing the oxide and wetting the surface; s4: chemical silver precipitation: a very thin silver layer (0.2 microns) is obtained by the displacement reaction, protecting the underlying copper. The device has simple structure, reasonable design and easy maintenance, can obtain a layer of uniform gloss coating on the surface of the circuit, and is beneficial to direct assembly of high-density interconnection circuits, micro-spacing SMT, BGA and chips; and meanwhile, the contact performance is excellent, and an excellent copper/tin welding spot is obtained.
Description
Technical Field
The invention relates to the technical field of chemical silver precipitation, in particular to a process technology of chemical silver precipitation.
Background
The existing chemical silver deposition process utilizes the displacement reaction of silver and copper, namely, when the copper on the surface is displaced by silver, the reaction is stopped, so that the thickness cannot meet the requirement of bonding on silver thickness (the silver thickness is more than 1 micron) in actual production, and the current gradually rising application in the field of LEDs can not be met.
Disclosure of Invention
The invention aims to provide a process for chemically depositing silver.
To achieve the above object, the present invention adopts the following:
a process for electroless silver plating, comprising:
s1: acid cleaning: removing foreign matters on the board surface such as copper oxide, grease and the like by acidity (without damaging green paint);
s2: microetching: an improved microetching agent for etching the copper surface to remove dirt;
s3: presoaking: removing the oxide and wetting the surface;
s4: chemical silver precipitation: a very thin silver layer (0.2 microns) is obtained by the displacement reaction, protecting the underlying copper.
Preferably, the temperature during the acid cleaning is 60 degrees, the horizontal process time is 44 seconds, and the vertical process time is 8 minutes.
Preferably, the microetching temperature is 45 degrees, the horizontal processing time is 80 seconds, and the vertical processing time is 80 seconds.
Preferably, the temperature of the pre-dip is 48 degrees, the horizontal process time is 44 seconds, and the vertical process time is 44 seconds.
Preferably, the temperature of the chemical silver deposition is 65 ℃, the temperature of the horizontal process is 87 seconds, and the time of the vertical process is 87 seconds.
Preferably, during the acidic cleaning, the colloidal particles approach the soil and adhere to the surface, breaking the soil and pulling it away from the substrate surface, suspending the soil in the working fluid.
The invention has the following advantages:
the device has simple structure, reasonable design and easy maintenance, can obtain a layer of uniform gloss coating on the surface of the circuit, and is beneficial to direct assembly of high-density interconnection circuits, micro-spacing SMT, BGA and chips; and meanwhile, the contact performance is excellent, and an excellent copper/tin welding spot is obtained.
The foregoing description is only an overview of the present invention, and is intended to provide a better understanding of the present invention, as it is embodied in the following description, with reference to the preferred embodiments of the present invention and the accompanying drawings.
Drawings
The following describes the embodiments of the present invention in further detail with reference to the drawings.
FIG. 1 is a schematic illustration of the reaction principle of the acid cleaning tank of the present invention.
Fig. 2 is a schematic diagram of the reaction principle of the chemical silver precipitation tank of the invention.
FIG. 3 is a schematic diagram of the copper-silver displacement reaction principle of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
In addition, the technical features of the different embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
As shown in fig. 1 to 3, a process for electroless silver plating includes: s1: acid cleaning: removing foreign matters on the board surface such as copper oxide, grease and the like by acidity (without damaging green paint);
s2: microetching: an improved microetching agent for etching the copper surface to remove dirt;
s3: presoaking: removing the oxide and wetting the surface;
s4: chemical silver precipitation: a very thin silver layer (0.2 microns) is obtained by the displacement reaction, protecting the underlying copper.
Further, the temperature during the acid cleaning is 60 degrees, the horizontal process time is 44 seconds, and the vertical process time is 8 minutes.
Further, the microetching temperature is 45 degrees, the horizontal processing time is 80 seconds, and the vertical processing time is 80 seconds. Microetching reaction principle: copper reacts with sodium persulfate under sulfuric acid acidic conditions or with hydrogen peroxide under sulfuric acid acidic conditions, and the reaction formula:
Cu+H2O+Na2S2O4→CuSO4+H2SO4。
further, the temperature of the pre-dipping is 48 degrees, the horizontal processing time is 44 seconds, and the vertical processing time is 44 seconds.
Further, the temperature of the chemical silver deposition is 65 ℃, the temperature of the horizontal process is 87 seconds, and the time of the vertical process is 87 seconds.
Further, during the acidic cleaning, the colloidal particles approach the soil and adhere to the surface, breaking the soil and pulling it away from the substrate surface, suspending the soil in the working fluid.
Analysis frequency of electroless silver plating process:
microetching rate measurement:
A15X 15cm2 substrate was taken (the surface antirust layer was removed in advance).
Oven dried at 120deg.C for 15 min, cooled to room temperature in a desiccator, and then weighed by a precision balance, W1 (four digits after the decimal point).
And (5) putting the material into a discharging section of the horizontal silver equipment until microetching is finished, and taking out the material after pure water washing. Oven dried at 120deg.C for 15 min, cooled and weighed on a precision balance W2.
And (3) calculating: microetching amount= (W1-W2) ×98.3.
Note that: the plate edge is taken as far as possible, and the copper surface is not touched.
Factors affecting microetching rate: hydrogen peroxide concentration, temperature, action time, sulfuric acid concentration, stabilizer concentration and chloride ions.
The chemical silver thickness measurement includes: gravimetric and XRF methods.
Silver thickness was measured by gravimetric method:
taking a 15 multiplied by 15cm2 substrate;
and (5) putting the material into a discharging section of the horizontal silver equipment until microetching is finished, and taking out the material after pure water washing. Drying at 120 ℃ for 15 minutes, cooling, and weighing W1 (the precision reaches four digits after decimal point) by a precision balance;
the test board is put into the material receiving section from the presoaking groove and taken out;
drying at 120 ℃ for 15 minutes, cooling and weighing W2 by a precision balance;
and (3) calculating: silver oxide thickness= (W1-W2) ×98.3×1.42.
Note that: the plate edge is taken as far as possible, and the copper surface is not touched.
Silver thickness was measured using XRF:
thin silver standard sheet
Beam size: the beam size cannot exceed 33% of the diameter of the bonding pad to be measured
The measurement time is 30 seconds (minimum measurement time), and a measurement time of 60 seconds is required for a smaller beam size;
factors affecting chemical silver thickness: temperature, contact time, nitric acid concentration, silver ion concentration, agitation of the solution, and pad size.
Control of deposition rate: copper ions have little effect on deposition rate over the operating range of TDS. Ion cleanliness test:
test sample: a representative PC board;
test conditions: 75% isopropyl alcohol/25% di water;
specification (IPC): < 1.6. Mu.g NaCl/cm2.
Influence ion cleanliness factor:
green paint manufacturing process: exposing/developing/post baking;
green paint manufacturing process: brand of green paint;
quality of DI water (< 10 μs);
overflow amount of DI water;
Handling；
the solder property testing method comprises the following steps:
plate edge tin Test (IPC-J-STD-003 Test A);
swing tin Test (IPC-J-STD-003 Test B);
tin float Test (IPC-J-STD-003 Test C);
wave welding Test (IPC-J-STD-003 Test D);
tin pick balance (IPC-J-STD-003 Test E).
Optimum solder resistance:
the outer layer is free of tin resist residue;
green paint process-no residual film;
silver deposition process-silver thickness is normal;
operation-sulfur-free chlorine-free glove.
The working principle of the device is as follows: the device has simple structure, reasonable design and easy maintenance, can obtain a layer of uniform gloss coating on the surface of the circuit, and is beneficial to direct assembly of high-density interconnection circuits, micro-spacing SMT, BGA and chips; and meanwhile, the contact performance is excellent, and an excellent copper/tin welding spot is obtained.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the invention, which are described in detail and are not to be construed as limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
Claims (6)
1. A process for electroless silver plating, comprising:
s1: acid cleaning: removing foreign matters on the board surface such as copper oxide, grease and the like by acidity (without damaging green paint);
s2: microetching: an improved microetching agent for etching the copper surface to remove dirt;
s3: presoaking: removing the oxide and wetting the surface;
s4: chemical silver precipitation: a very thin silver layer (0.2 microns) is obtained by the displacement reaction, protecting the underlying copper.
2. The process of claim 1, wherein the acidic cleaning is performed at a temperature of 60 degrees, a horizontal process time of 44 seconds, and a vertical process time of 8 minutes.
3. The process of claim 1, wherein the microetching temperature is 45 degrees, the horizontal process time is 80 seconds, and the vertical process time is 80 seconds.
4. The process of claim 1, wherein the pre-dip is performed at 48 degrees, the horizontal process time is 44 seconds, and the vertical process time is 44 seconds.
5. The process of claim 1, wherein the temperature of the electroless plating is 65 degrees, the horizontal process is 87 seconds, and the vertical process is 87 seconds.
6. A process according to claim 2, wherein during the acidic cleaning, the colloidal particles approach the soil and adhere to the surface, breaking the soil by pulling it away from the substrate surface, and suspending the soil in the working fluid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310644006.1A CN116657122A (en) | 2023-06-01 | 2023-06-01 | Process for chemically depositing silver |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310644006.1A CN116657122A (en) | 2023-06-01 | 2023-06-01 | Process for chemically depositing silver |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116657122A true CN116657122A (en) | 2023-08-29 |
Family
ID=87718580
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310644006.1A Pending CN116657122A (en) | 2023-06-01 | 2023-06-01 | Process for chemically depositing silver |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116657122A (en) |
-
2023
- 2023-06-01 CN CN202310644006.1A patent/CN116657122A/en active Pending
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