CN116646411A - AlGaAsSb virtual substrate and semiconductor preparation method - Google Patents

AlGaAsSb virtual substrate and semiconductor preparation method Download PDF

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Publication number
CN116646411A
CN116646411A CN202310607567.4A CN202310607567A CN116646411A CN 116646411 A CN116646411 A CN 116646411A CN 202310607567 A CN202310607567 A CN 202310607567A CN 116646411 A CN116646411 A CN 116646411A
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substrate
algaassb
gasb
inas
layer
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陈星佑
陈意桥
于天
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Suzhou Kunyuan Photoelectric Co ltd
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Suzhou Kunyuan Photoelectric Co ltd
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Abstract

The invention relates to an AlGaAsSb virtual substrate and a semiconductor preparation method, wherein the virtual substrate is positioned between a GaAs substrate and a periodic material layer, and the periodic material layer is an InAs material and a GaSb material which alternately grow; the lattice constant d= (d) of the virtual substrate 1 *x+d 2 * y)/(x+y), where x is the thickness of the InAs material layer in a single cycle, y is the thickness of the GaSb material layer in a single cycle, d 1 Lattice constant, d of InAs material 2 Is GaSb lattice constant; the virtual substrate is an alloy material composed of Al, ga, as or Sb elements. The lattice constant of the required AlGaAsSb virtual substrate can be accurately obtained only through the respective thicknesses of InAs and GaSb in a single period of a target structure, so that the introduction of mismatch defects is avoided, the whole structure is ensured to meet the requirement of growing at a higher temperature, the crystal quality is ensured, and the performance of a photoelectric device is improved.

Description

AlGaAsSb virtual substrate and semiconductor preparation method
Technical Field
The invention relates to the technical field of semiconductors, in particular to an AlGaAsSb virtual substrate and a semiconductor preparation method.
Background
In the technical field of semiconductor photoelectricity, inAs/GaSb II superlattice materials can realize continuous control of energy bands by adjusting layer thicknesses and components, and the developed detector is widely applied to the fields of biochemical gas detection, infrared guidance, infrared imaging, night vision, aerospace and the like. Currently, inAs/GaSb type II superlattices are obtained by alternately growing InAs and GaSb materials with certain fixed thicknesses on a GaSb or InAs substrate, each period contains a certain number of layers of InAs and GaSb materials, the optical performance is regulated and controlled by regulating the thicknesses of the InAs and GaSb materials, the period thickness of the superlattice is only a few nanometers, in general, in order to increase the quantum efficiency of a photoelectric device, the InAs/GaSb superlattice usually needs hundreds of thousands of periods, when GaSb is selected as a substrate, as the lattice constant of the InAs is smaller than that of the GaSb, when the period number is increased, a large amount of tensile strain is easily accumulated in the surface of the superlattice material, and the strain is released beyond a critical thickness, so that lattice defects are generated in the material, the photoelectric performance of the device is reduced, and the capacity of improving the quantum efficiency by increasing the thickness of an absorption layer is severely restricted.
In order to reduce the damage caused by the tensile strain in the material surface, a material with a lattice constant longer than that of the GaSb substrate needs to be inserted between InAs and GaSb as an interface layer, so that compressive stress is generated in the material surface of the layer, the in-plane tensile stress in the InAs layer can be balanced, the strain compensation effect is achieved, and meanwhile, the interface is expected not to introduce heterogeneous elements to increase the complexity and difficulty of the process. Therefore, for the characteristics of InAs/GaSb superlattice material system, the optional interface layer is In (As) Sb. But so far, another problem is faced: generally, when the semiconductor crystal lattice grows at a higher temperature, the lower the probability of generating point defects In the material, the higher the optical performance of the photoelectric device, and the material characteristics of InAs and GaSb are suitable for growing at a higher temperature (such As 480 degrees), but after the In (As) Sb interface layer is introduced, the growth temperature is limited to the characteristics of the InSb material, and the growth temperature cannot be too high (such As the growth temperature suitable for InSb is 400 degrees), so that the growth temperature of the whole superlattice device structure can only migrate InSb, and the photoelectric performance of the final device is greatly limited.
Disclosure of Invention
Therefore, the invention aims to solve the technical problems that InSb is required to be transferred to the growth temperature of a superlattice device structure in the prior art, and the photoelectric performance of a final device is limited.
In order to solve the technical problems, the invention provides an AlGaAsSb virtual substrate, wherein the virtual substrate is an alloy material composed of Al, ga, as and Sb elements; the virtual substrate is positioned between the GaAs substrate and the periodic material layer, and the periodic material layer is made of InAs material and GaSb material which alternately grow;
the lattice constant d= (d) of the virtual substrate 1 *x+d 2 * y)/(x+y), where x is the thickness of the InAs material layer in a single cycle, y is the thickness of the GaSb material layer in a single cycle, d 1 Lattice constant, d of InAs material 2 Is the lattice constant of GaSb materials.
Preferably, the thickness of the dummy substrate is 0.5-5 μm.
Preferably, d 1 Lattice constant at 300K for InAs materiald 2 Selecting GaSb material lattice constant +.>
Preferably, the conductivity type of the dummy substrate is n-type conductivity or p-type conductivity.
Preferably, the virtual substrate is obtained by a metal organic chemical vapor deposition method or a molecular beam epitaxy method.
Preferably, the GaAs substrate is a semi-insulating substrate or a conductive substrate.
The invention also discloses a semiconductor preparation method, which comprises the following steps:
s1, acquiring a GaAs substrate;
s2, growing the AlGaAsSb virtual substrate on the GaAs substrate;
and S3, alternately growing InAs material and GaSb material on the AlGaAsSb virtual substrate to form a periodic material layer.
Preferably, the S1 specifically includes:
sending the GaAs substrate into a molecular beam epitaxial growth cavity, and removing an oxide layer on the surface of the GaAs substrate at the temperature of 585-605 ℃.
Preferably, the S2 includes:
growing a GaAs buffer layer on the GaAs substrate;
the temperature of the GaAs substrate is 400-450 ℃, and AlGaAsSb material with the thickness of 0.2-2 mu m is grown on the GaAs buffer layer;
and (3) continuously growing AlGaAsSb materials with the thickness of 0.3-3 mu m at the temperature of 500-550 ℃ on the GaAs substrate to obtain the virtual substrate.
Preferably, in S3, the periodic material layer includes a lower contact layer, an absorption layer, and an upper contact layer sequentially disposed from bottom to top, where the lower contact layer, the absorption layer, and the upper contact layer include multiple periods of InAs material and GaSb material, respectively, and the lower contact layer and the virtual substrate are both P-type materials or both N-type materials.
Compared with the prior art, the technical scheme of the invention has the following advantages:
1. when the AlGaAsSb virtual substrate on the GaAs substrate is used as the substrate for growing the InAs/GaSb superlattice material, the lattice constant of the virtual substrate can be adjusted at will between GaAs and AlSb, and the adjustment interval covers the lattice constants of InAs and GaSb, so that the lattice constant of the required AlGaAsSb virtual substrate can be accurately obtained only through the respective thicknesses of InAs and GaSb in a single period of a target structure.
2. Correspondingly, after the virtual substrate is arranged, in the subsequent growth process, even if a re-thick absorption layer is grown, the absorption layer can contain hundreds of thousands of cycles of InAs/GaSb superlattice, and the stress can be completely compensated by the absorption layer naturally, so that the introduction of mismatch defects is avoided.
3. The virtual substrate can ensure that the whole structure meets the requirement of growing at a higher temperature, ensures the crystal quality and improves the performance of the photoelectric device.
Drawings
FIG. 1 is a schematic diagram of the structure of an AlGaAsSb virtual substrate;
fig. 2 is a schematic structural diagram of the detector.
Detailed Description
The present invention will be further described with reference to the accompanying drawings and specific examples, which are not intended to be limiting, so that those skilled in the art will better understand the invention and practice it.
Referring to FIG. 1, the invention discloses an AlGaAsSb virtual substrate, which is an alloy material composed of Al, ga, as and Sb elements. The virtual substrate is positioned between the GaAs substrate and the periodic material layer, and the periodic material layer is made of InAs material and GaSb material which alternately grow.
Lattice constant d= (d) of virtual substrate 1 *x+d 2 * y)/(x+y), where x is the thickness of the InAs material layer in a single cycle, y is the thickness of the GaSb material layer in a single cycle, d 1 Lattice constant, d of InAs material 2 Is the lattice constant of GaSb materials.
The invention can obtain the virtual substrate with the required lattice constant through the epitaxial technology and the material proportion of various elements.
In the invention, when the AlGaAsSb virtual substrate on the GaAs substrate is used as the substrate for growing the InAs/GaSb superlattice material, the lattice constant of the virtual substrate can be arbitrarily regulated between GaAs and AlSb, and the regulation interval covers the lattice constants of InAs and GaSb, so that the lattice constant of the required AlGaAsSb virtual substrate can be accurately obtained only through the respective thicknesses of InAs and GaSb in a single period of a target structure. Correspondingly, in the subsequent growth process, even if the thicker absorption region grows, the absorption region can contain hundreds of thousands of cycles of InAs/GaSb superlattice, the stress can be completely compensated naturally by the absorption region, the introduction of mismatch defects is avoided, the whole structure is ensured to meet the requirement of growing at a higher temperature, the crystal quality is ensured, and the performance of the photoelectric device is improved.
The invention adds a step of process for growing AlGaAsSb virtual substrates, but can adopt a GaAs substrate which is mature in process and low in price to replace the GaSb substrate which is immature in the current process and high in price, does not increase commercial cost, and can release strain and filter dislocation through temperature modulation, buffer layers and other process methods although certain lattice mismatch exists between GaAs, gaSb, alAs, alSb, so that the virtual substrate with good crystal quality can be obtained.
The invention can solve the problem of limitation of the Sb-based II superlattice semiconductor laser and the detector in the aspect of design caused by no matching commercial substrate, and increases the flexibility of device design.
In the prior art, a GaSb substrate is generally adopted In the growth technical scheme of InAs/GaSb superlattice, because the lattice constant of InAs is smaller than that of GaSb, an In (As) Sb interface layer is required to be inserted between InAs and GaSb to balance stress, the thickness of the interface layer is required to be accurately controlled according to the material structure, and the fluctuation of V-group valve position easily causes the change of the overall lattice mismatch degree and the surface defect density of the material; due to the characteristics of In (As) Sb, the material is suitable for lower growth temperature, and the growth temperature of the whole InAs/GaSb superlattice structure material cannot be too high, so that the performance of the photoelectric device is limited. The invention provides a virtual substrate technology for InAs/GaSb superlattice II type superlattice materials, namely, a low-defect-density quaternary AlGaAsSb material is grown on the existing GaAs commercial substrate through an epitaxial technology and the material proportion of various element materials, and the lattice constant of the material is the average lattice constant of the epitaxial material.
Further, the thickness of the dummy substrate is 0.5-5 μm. In general, the thinner the virtual substrate is, the more advantageous to control commercial cost, but in order to reduce defect density of AlGaAsSb material grown on mismatched GaAs substrate, it is also necessary to ensure that the virtual substrate has a certain thickness, so the thickness of the virtual substrate is controlled to be 0.5-5 μm.
The lattice constant can change slightly with temperature, and can be limited at a certain temperature, specifically, d, when expressing the lattice constant for objective accuracy 1 Lattice constant at 300K for InAs materiald 2 Selecting GaSb material lattice constant +.>
The lattice constants of the materials are typically the following at 300K: gaAs isAlAs is->InAs isGaSb is->AlSb is->InSb is->The lattice constant of the virtual substrate is randomly regulated between GaAs and AlSb by epitaxially growing AlGaAsSb alloy materials on the GaAs substrate, and the virtual substrate with a specific lattice constant can be designed according to the respective thicknesses of InAs and GaSb in the required superlattice material period and is prepared by an epitaxial method. The lattice constant determination method of the virtual substrate comprises the following steps: assuming that InAs thickness is x and GaSb thickness is y, and the lattice constant of the virtual substrate is d, d= (6.0584x+6.0959 y)/(x+y).
The conductivity type of the dummy substrate is either n-type conductivity or p-type conductivity. The virtual substrate is obtained by a metal organic chemical vapor deposition method or a molecular beam epitaxy method, and the uniformity of a film layer is high.
The GaAs substrate is a semi-insulating substrate or a conductive substrate, and has wide application range.
The invention discloses a semiconductor preparation method, which comprises the following steps:
step one, obtaining a GaAs substrate, which specifically comprises the following steps:
sending the GaAs substrate into a molecular beam epitaxial growth cavity, and removing an oxide layer on the surface of the GaAs substrate at the temperature of 585-605 ℃.
Step two, growing the AlGaAsSb virtual substrate on the GaAs substrate, which specifically comprises the following steps:
the GaAs substrate is heated to 585 ℃, and a GaAs buffer layer is grown on the GaAs substrate;
the temperature of the GaAs substrate is 400-450 ℃, and AlGaAsSb material with the thickness of 0.2-2 mu m is grown on the GaAs buffer layer; and (3) continuously growing AlGaAsSb materials with the thickness of 0.3-3 mu m at the temperature of 500-550 ℃ on the GaAs substrate to obtain the virtual substrate.
And thirdly, alternately growing InAs material and GaSb material on the AlGaAsSb virtual substrate to form a periodic material layer.
The periodic material layer comprises a lower contact layer, an absorption layer and an upper contact layer which are sequentially arranged from bottom to top, wherein the lower contact layer, the absorption layer and the upper contact layer respectively comprise InAs materials and GaSb materials with a plurality of periods, and the lower contact layer and the virtual substrate are both P-type materials or N-type materials.
The semiconductor preparation method has the advantages that: on one hand, by arranging the AlGaAsSb virtual substrate, even if a re-thick absorption region grows, the stress of the absorption region can be completely compensated naturally by the AlGaAsSb virtual substrate, so that the introduction of mismatch defects is avoided; on the other hand, the AlGaAsSb virtual substrate in the invention ensures that the whole structure meets the requirement of growing at a higher temperature, ensures the crystal quality and improves the performance of the photoelectric device.
The technical scheme of the invention is further described and explained below with reference to specific embodiments.
Referring to fig. 1, the embodiment is an InAs/GaSb II superlattice infrared detector structure with a growth cut-off wavelength of 12 μm, which specifically includes the following steps:
(1) The lattice constant of the GaAs-based AlGaAsSb virtual substrate is designed for the superlattice detector, and specifically comprises the following steps: the superlattice contains 15MLInAs/7ML GaSb per period by the aid of the detector with the cut-off wavelength of 12 mu m, wherein ML is the abbreviation of a monolayer, namely the meaning of a monomolecular layer;
thenAnd->From d= (6.0584x+6.0959y)/(x+y), the target lattice constant of the virtual substrate can be obtained
(2) The growth method of the superlattice detector structure comprises the following steps:
step 1, deoxidizing a substrate; the method comprises the following steps: sending the semi-insulating GaAs substrate into a molecular beam epitaxial growth cavity, and removing an oxide layer on the surface of the substrate at the temperature of 585-605 ℃;
step 2, growing a GaAs buffer layer; the method comprises the following steps: setting the temperature of the substrate to 585 ℃, and growing a GaAs buffer layer with the thickness of 200nm on the semi-insulating GaAs substrate;
step 3, growing an AlGaAsSb virtual substrate; the method comprises the following steps: firstly setting the temperature of the substrate to 420 ℃, and growing the GaAs buffer layer with the thickness of about 500nm and the hole concentration of 2 multiplied by 10 according to the chemical proportion 18 cm -3 The low temperature AlGaAsSb layer is arranged at the temperature of 520 ℃ and the growth thickness is about 1500nm, and the hole concentration is 2 multiplied by 10 18 cm -3 Is used as a virtual substrate, and has a lattice constant satisfying X-ray diffraction calibration of
Step 4, growing a lower contact layer; the method comprises the following steps: setting the substrate temperature to 480 ℃, growing a 15ML InAs/7ML GaSb lower contact layer with the thickness of about 500nm and containing 75 cycles on the AlGaAsSb virtual substrate, wherein the hole concentration is 1 multiplied by 10 18 cm -3 ；
Step 5, growing an absorption layer; the method comprises the following steps: maintaining the substrate temperature at 480 ℃, growing an unintentionally doped i-type 15ML InAs/7ML GaSb absorbing layer with the thickness of 1500nm comprising 225 periods;
step 6, growing an upper contact layer; the method comprises the following steps: the substrate temperature was maintained at 480℃and 15ML InAs/7ML GaSb, having an electron concentration of 1X 10, containing 23 cycles, was grown on the absorber layer to a thickness of about 150nm as an upper contact layer 18 cm -3 The method comprises the steps of carrying out a first treatment on the surface of the I.e., the desired superlattice detector structure.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations and modifications of the present invention will be apparent to those of ordinary skill in the art in light of the foregoing description. It is not necessary here nor is it exhaustive of all embodiments. While still being apparent from variations or modifications that may be made by those skilled in the art are within the scope of the invention.

Claims (10)

1. An AlGaAsSb virtual substrate is characterized in that,
the virtual substrate is an alloy material composed of Al, ga, as and Sb elements;
the virtual substrate is positioned between the GaAs substrate and the periodic material layer, and the periodic material layer is made of InAs material and GaSb material which alternately grow;
the lattice constant d= (d) of the virtual substrate 1 *x+d 2 * y)/(x+y), where x is the thickness of the InAs material layer in a single cycle, y is the thickness of the GaSb material layer in a single cycle, d 1 Lattice constant, d of InAs material 2 Is the lattice constant of GaSb materials.
2. The AlGaAsSb virtual substrate according to claim 1, wherein said virtual substrate has a thickness of 0.5-5 μm.
3. The AlGaAsSb virtual substrate of claim 1, wherein d 1 Lattice constant at 300K for InAs materiald 2 Selecting GaSb material lattice constant +.>
4. The AlGaAsSb virtual substrate of claim 1, wherein the conductivity type of said virtual substrate is either n-type conductivity or p-type conductivity.
5. The AlGaAsSb virtual substrate according to claim 1, wherein said virtual substrate is obtained by metal organic chemical vapor deposition or molecular beam epitaxy.
6. The AlGaAsSb dummy substrate according to claim 1, wherein said GaAs substrate is a semi-insulating substrate or a conductive substrate.
7. A method of manufacturing a semiconductor, comprising the steps of:
s1, acquiring a GaAs substrate;
s2, growing the AlGaAsSb virtual substrate in any one of claims 1 to 6 on a GaAs substrate;
and S3, alternately growing InAs material and GaSb material on the AlGaAsSb virtual substrate to form a periodic material layer.
8. The method for manufacturing a semiconductor according to claim 7, wherein S1 specifically comprises:
sending the GaAs substrate into a molecular beam epitaxial growth cavity, and removing an oxide layer on the surface of the GaAs substrate at the temperature of 585-605 ℃.
9. The semiconductor manufacturing method according to claim 7, wherein S2 comprises:
growing a GaAs buffer layer on the GaAs substrate;
the temperature of the GaAs substrate is 400-450 ℃, and AlGaAsSb material with the thickness of 0.2-2 mu m is grown on the GaAs buffer layer;
and (3) continuously growing AlGaAsSb materials with the thickness of 0.3-3 mu m at the temperature of 500-550 ℃ on the GaAs substrate to obtain the virtual substrate.
10. The method according to claim 7, wherein in S3, the periodic material layer includes a lower contact layer, an absorption layer, and an upper contact layer sequentially disposed from bottom to top, the lower contact layer, the absorption layer, and the upper contact layer respectively include a plurality of periods of InAs material and GaSb material, and wherein the lower contact layer and the dummy substrate are both P-type material or both N-type material.
CN202310607567.4A 2023-05-26 2023-05-26 AlGaAsSb virtual substrate and semiconductor preparation method Pending CN116646411A (en)

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