CN116633166A - Three-phase bridge power module circuit packaging structure - Google Patents
Three-phase bridge power module circuit packaging structure Download PDFInfo
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- CN116633166A CN116633166A CN202310614119.7A CN202310614119A CN116633166A CN 116633166 A CN116633166 A CN 116633166A CN 202310614119 A CN202310614119 A CN 202310614119A CN 116633166 A CN116633166 A CN 116633166A
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 11
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- 230000000694 effects Effects 0.000 description 6
- 230000017525 heat dissipation Effects 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 230000033228 biological regulation Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
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- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
- H02M7/53871—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
- H02M7/53875—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current with analogue control of three-phase output
Abstract
The invention discloses a circuit packaging structure of a three-phase bridge power module, which relates to the field of three-phase bridge power modules and comprises three half-bridge circuits, wherein alternating current terminals of the three half-bridge circuits are respectively connected with U, V, W phases, and two direct current terminals of each half-bridge circuit are respectively a positive direct current terminal and a negative direct current terminal; the positive direct current terminals and the negative direct current terminals of the three half-bridge circuits are arranged in any one of the following modes: mode one: positive dc terminal, negative dc terminal, positive dc terminal, negative dc terminal; mode two: negative, positive, negative, positive; in any one mode, the spacing between adjacent equipotential terminals is smaller than the spacing between adjacent non-equipotential terminals. The invention can make the three-phase bridge power module more compact and reduce the packaging cost.
Description
Technical Field
The invention relates to the field of three-phase bridge power modules, in particular to a circuit packaging structure of a three-phase bridge power module.
Background
In a traditional three-phase bridge power module, U, V, W phases are respectively formed by half-bridge circuit topologies, and in order to realize smaller loop parasitic inductance, independent DC+ and DC-DC power terminals are generally introduced for each half-bridge, so that voltage spikes of a power device during operation are reduced, and long-term safe operation of the power device is ensured. Meanwhile, three pairs of DC+ and DC-DC power terminals are introduced for U, V, W phases, and the DC+ and DC-terminals are arranged at intervals, so that the distance required by safety regulations is required to be reserved between the DC+ and the DC-terminals, the width between the DC-terminals is large, the width of the module is limited by the through flow of the terminals and the width required by safety regulations, the width dimension of the power module in the direction of the DC power terminals is limited, and the development trend of further reducing the dimension of the system is not facilitated. Meanwhile, the larger the module size is, the higher the packaging process difficulty and cost are.
Disclosure of Invention
The invention aims to provide a three-phase bridge power module circuit packaging structure for solving the problems in the background art.
In order to achieve the above purpose, the invention adopts the following technical scheme:
the three-phase bridge power module circuit packaging structure comprises three half-bridge circuits, wherein alternating current terminals of the three half-bridge circuits are respectively connected with U, V, W phases, and two direct current terminals of each half-bridge circuit are respectively a positive direct current terminal and a negative direct current terminal;
the positive direct current terminals and the negative direct current terminals of the three half-bridge circuits are arranged in any one of the following modes:
mode one: positive dc terminal, negative dc terminal, positive dc terminal, negative dc terminal;
mode two: negative, positive, negative, positive;
in any one mode, the spacing between adjacent equipotential terminals is smaller than the spacing between adjacent non-equipotential terminals.
Further, the pitch of adjacent equipotential terminals is less than 5mm.
Further, the three half-bridge circuits comprise a first half-bridge circuit positioned on one side, a second half-bridge circuit positioned in the middle and a third half-bridge circuit positioned on the other side, wherein the direct current terminals of the first half-bridge circuit and the direct current terminals of the second half-bridge circuit are arranged in a mirror symmetry manner, and the direct current terminals of the second half-bridge circuit and the direct current terminals of the third half-bridge circuit are arranged in a mirror symmetry manner.
Further, the power line layer of the first half-bridge circuit and the power line layer of the second half-bridge circuit are arranged in a mirror symmetry manner, and the power line layer of the second half-bridge circuit and the power line layer of the third half-bridge circuit are arranged in a mirror symmetry manner.
Further, adjacent same-potential direct current terminals are connected and combined to form the same direct current terminal.
Optionally, the power line layer routing direction between the power switching devices of the first half-bridge circuit, the power line layer routing direction between the power switching devices of the second half-bridge circuit, and the power line layer routing direction between the power switching devices of the third half-bridge circuit are all parallel to the mirror symmetry plane.
Optionally, the power line layer routing direction between the power switching devices of the first half-bridge circuit, the power line layer routing direction between the power switching devices of the second half-bridge circuit and the power line layer routing direction between the power switching devices of the third half-bridge circuit are perpendicular to the mirror symmetry plane.
Optionally, the three half-bridge circuits include a first half-bridge circuit located at one side, a second half-bridge circuit located in the middle, and a third half-bridge circuit located at the other side, where the power line layers of the first half-bridge circuit and the second half-bridge circuit are arranged in mirror symmetry;
the power line layer wiring direction of the first half-bridge circuit and the power line layer wiring direction between the power switch devices of the second half-bridge circuit are perpendicular to the mirror symmetry plane;
and the wiring direction of a power line layer between power switching devices of the third half-bridge circuit is parallel to the mirror symmetry plane.
Preferably, adjacent same-potential direct current terminals are connected and combined into the same direct current terminal.
Preferably, when the line layer width is smaller than the terminal width on the direct current side, the number of substrates is one or two.
When the width of the circuit layer is smaller than the width of the terminal on the direct current side, the number of the substrates is one or two. In the prior art, three blocks are generally arranged, so that the invention can be seen to make the structure more compact.
Compared with the prior art, the invention has the advantages that the terminal arrangement of U, V, W phases of direct current sides is adjusted from the traditional DC+1, DC-1, DC+2, DC-2, DC+3 and DC-3 to the arrangement of DC+1, DC-1, DC-2, DC+2, DC+3 and DC-3, and the arrangement of DC+2 and DC+3 is nearby, namely the arrangement of the same-potential direct current power terminals of U phase and V phase and the arrangement of the same-potential direct current power terminals of V phase and W phase is nearby, so that the safety distance between the two nearby direct current power terminals can be reduced, and the width dimension of the power module on a direct current power terminal arrangement preventing line can be further reduced. Meanwhile, as the chips of the two half-bridge arms are arranged nearby, the chips can be close to the water inlet position, and the liquid temperature at the water inlet position is low, so that the area can be subjected to collective heat dissipation, and the heat dissipation efficiency is improved. Meanwhile, the chip spacing between adjacent half-bridges is pulled open, the thermal coupling effect between the chips is reduced, the thermal resistance is reduced, and the heat dissipation is better, so that the temperature uniformity of the chips of the three half-bridges is better in overall view.
Drawings
FIG. 1 is a circuit topology of a three-phase bridge power module of the prior art;
FIG. 2 is a schematic diagram of a three-phase bridge power module layout in the prior art;
FIG. 3 is a circuit topology diagram of a three-phase bridge power module in a first, second and third embodiment of the present invention;
FIG. 4 is a schematic layout of a three-phase bridge power module according to a first embodiment of the present invention;
fig. 5 is a schematic layout diagram of a three-phase bridge power module in a second embodiment of the invention;
fig. 6 is a schematic layout diagram of a three-phase bridge power module in a third embodiment of the present invention;
FIG. 7 is a circuit topology of a three-phase bridge power module in a fourth, fifth, sixth embodiment of the present invention;
fig. 8 is a schematic layout diagram of a three-phase bridge power module in a fourth embodiment of the present invention;
fig. 9 is a schematic layout diagram of a three-phase bridge power module in a fifth embodiment of the present invention;
fig. 10 is a schematic layout diagram of a three-phase bridge power module in a sixth embodiment of the present invention;
FIG. 11 is a schematic layout of a three-phase bridge power module according to a seventh embodiment of the present invention;
FIG. 12 is a schematic layout of a three-phase bridge power module according to an eighth embodiment of the invention;
fig. 13 is a schematic layout diagram of a three-phase bridge power module according to a ninth embodiment of the invention.
Detailed Description
The following describes specific embodiments of the present invention with reference to the drawings.
As shown in fig. 1 and fig. 2, a circuit topology diagram and a layout diagram of a conventional three-phase bridge power module are shown, in a three-phase bridge circuit, two power switching devices T1, T2, T3, T4, T5 and T6 are provided, wherein T1 and T2, T3 and T4, and T5 and T6 respectively form a half-bridge circuit, and the three half-bridge circuits are combined together to form a power module circuit topology diagram of the three-phase bridge. In the half-bridge circuit formed by T1 and T2, DC+1 and DC-1 are respectively the positive and negative power terminals on the direct current side (DC side) of the half-bridge circuit, and U is the power terminal on the AC side. The corresponding DC+2/DC-2 and DC+3/DC-3 are positive and negative power terminals of a half-bridge circuit formed by T3 and T4, T5 and T6 respectively, and V and W are AC side power terminals of T3 and T4, T5 and T6 respectively. The power terminals of the three-phase bridge power module are arranged at intervals of DC+1, DC-1, DC+2, DC-2, DC+3 and DC-3, and the distance required by safety regulations is required to be reserved between the positive power terminal and the negative power terminal, so that the width between the terminals on the direct current side is large, the width of the module is limited by the through current of the terminals and the width required by safety regulations, the width dimension of the power module in the direction of the direct current power terminal is limited, and the development trend of further downsizing of the module and the system is not facilitated. Meanwhile, the larger the module size is, the higher the packaging process difficulty and cost are.
The general scheme of the invention is as follows: the power supply comprises three half-bridge circuits, wherein alternating current terminals of the three half-bridge circuits are respectively connected with U, V, W phases, and two direct current terminals of each half-bridge circuit are respectively a positive direct current terminal and a negative direct current terminal;
the positive direct current terminals and the negative direct current terminals of the three half-bridge circuits are arranged in any one of the following modes:
mode one: positive dc terminal, negative dc terminal, positive dc terminal, negative dc terminal;
mode two: negative, positive, negative, positive;
in any one mode, the spacing between adjacent equipotential terminals is smaller than the spacing between adjacent non-equipotential terminals. The two ways are also understood to be essentially identical, and when arranged from different directions, two different ways are obtained respectively, and therefore are not distinguished later.
In the first embodiment of the present invention, as shown in fig. 3 (fig. 3 is a three-phase bridge topology circuit, the pitch is shown in fig. 4) and fig. 4, the led-out DC terminals with the same potential are arranged nearby, and specifically, the positive (dc+1), negative (DC-1), negative (DC-2), positive (dc+2), positive (dc+3) and negative (DC-3) form from left to right, and the adjacent common potentials can be arranged closer together, so that the size of the three-phase bridge power module can be reduced.
As shown in fig. 4, the three half-bridge circuits of the three-phase bridge include a first half-bridge circuit formed by T1 and T2 at one side, a second half-bridge circuit formed by T3 and T4 at the middle, and a third half-bridge circuit formed by T5 and T6 at the other side, wherein the DC terminals dc+1/DC-1 and dc+2/DC-2 of the first and second half-bridge circuits are arranged in mirror symmetry, and the DC terminals dc+2/DC-2 and dc+3/DC-3 of the second and third half-bridge circuits are arranged in mirror symmetry. Still further, the power line layers of the first half-bridge circuit formed by T1 and T2 and the power line layers of the second half-bridge circuit formed by T3 and T4 are arranged in a mirror symmetry manner, and the power line layers of the second half-bridge circuit formed by T3 and T4 and the power line layers of the third half-bridge circuit formed by T5 and T4 are arranged in a mirror symmetry manner, so that the dc+2 and DC-2 in the single path of the second half-bridge in the conventional three-phase bridge power module in fig. 2 are shifted, and the technical effect of the same-potential arrangement of the adjacent terminals of the three-phase bridge power module in the first embodiment is achieved.
In the first embodiment shown in fig. 4, the power line layer routing direction of the first half-bridge circuit formed by T1 and T2 is from the positive terminal dc+1 to T1, where T1 goes downward through the lead on the upper surface of the chip to T2, and T2 goes downward through the lead on the upper surface of the chip to the negative terminal DC-1; the wiring direction of a power circuit layer of the second half-bridge circuit formed by the T3 and the T4 is upward from a positive terminal DC+2 to the T3, the T3 downward goes to the T4 through a lead wire on the upper surface of the chip, and the T4 downward goes to a negative terminal DC-2 through a lead wire on the upper surface of the chip; the wiring direction of the power circuit layer of the third half-bridge circuit formed by the T5 and the T6 is upward from the positive terminal DC+3 to the T5, the T5 downward goes to the T6 through a lead wire on the upper surface of the chip, and the T6 downward goes to the negative terminal DC-3 through a lead wire on the upper surface of the chip; the wires of the power switching devices T1 to T2 in the first half-bridge circuit, the wires of the power switching devices T3 to T4 in the second half-bridge circuit and the wires of the power switching devices T5 to T6 in the third half-bridge circuit are all parallel to the mirror symmetry plane from top to bottom.
Fig. 3 and 5 show a circuit topology and a layout diagram of a second embodiment of the present invention. The three half-bridge circuits of the three-phase bridge comprise a first half-bridge circuit formed by T1 and T2, a second half-bridge circuit formed by T3 and T4 and a third half-bridge circuit formed by T5 and T6, wherein the direct current terminals DC+1/DC-1 and DC+2/DC-2 of the first half-bridge circuit and the second half-bridge circuit are arranged in a mirror symmetry mode, and the direct current terminals DC+2/DC-2 and DC+3/DC-3 of the second half-bridge circuit are arranged in a mirror symmetry mode. Still further, the power line layers of the first half-bridge circuit formed by T1 and T2 and the power line layers of the second half-bridge circuit formed by T3 and T4 are arranged in a mirror symmetry manner, and the power line layers of the second half-bridge circuit formed by T3 and T4 and the power line layers of the third half-bridge circuit formed by T5 and T4 are arranged in a mirror symmetry manner, so that the dc+2 and DC-2 in the single path of the second half-bridge in the conventional three-phase bridge power module in fig. 2 are shifted, and the technical effect of the same-potential arrangement of the adjacent terminals of the three-phase bridge power module in the first embodiment is achieved.
In a second embodiment shown in fig. 5, the power line layer routing direction of the first half-bridge circuit formed by T1 and T2 is from the positive terminal dc+1 to T1, where T1 goes to the right through the lead on the upper surface of the chip to T2, and then T2 goes to the right through the lead on the upper surface of the chip to the power line layer connected with DC-1, and goes to the negative terminal DC-1 again; the wiring direction of the power circuit layer of the second half-bridge circuit formed by the T3 and the T4 is that the positive terminal DC+2 goes upward to the T3, the T3 goes rightward to the T4 through a lead wire on the upper surface of the chip, the T4 goes rightward to the power circuit layer connected with the DC-2 through a lead wire on the upper surface of the chip, and then goes downward to the negative terminal DC-2; the wiring direction of the power circuit layer of the first half-bridge circuit formed by the T5 and the T6 is upward from the positive terminal DC+3 to the T5, the T5 is rightward to the T6 through a lead wire on the upper surface of the chip, the T6 is rightward to the power circuit layer connected with the DC-3 through a lead wire on the upper surface of the chip, and then downward to the negative terminal DC-3; the wires of the power switching devices T1 to T2 in the first half-bridge circuit, the wires of the power switching devices T3 to T4 in the second half-bridge circuit and the wires of the power switching devices T5 to T6 in the third half-bridge circuit are all from left to right and are perpendicular to the mirror symmetry plane. This embodiment may enable smaller power routing and lower loop inductance than the first embodiment.
For both the first and second embodiments, there is a case where two half-bridge chips are arranged in close proximity. In the first half-bridge circuit of the first embodiment (shown in fig. 4), the distances between T1 and T2 and between T3 and T4 in the second half-bridge circuit are closer than those of the conventional three-phase bridge module, so that thermal mutual coupling between T1 and T3 and thermal mutual coupling between T2 and T4 are easily caused, and the heat dissipation effect is affected. Therefore, the water inlet of the radiator is required to be connected from the first half-bridge side, and the water outlet is required to be connected from the third half-bridge side, so that the influence of thermal coupling is reduced. In the second half-bridge circuit of the second embodiment (shown in fig. 5), the distances between T3 and T4 and between T5 and T6 in the third half-bridge circuit are closer than those of the conventional three-phase bridge module, so that thermal mutual coupling between T3 and T5 and thermal mutual coupling between T4 and T6 are easily caused, and the heat dissipation effect is affected. Therefore, the water inlet of the radiator needs to be connected from the third half-bridge side, and the water outlet of the radiator needs to be connected from the first half-bridge side, so that the influence of thermal coupling is reduced.
Fig. 3 and 6 are schematic circuit topologies and layout diagrams of a third embodiment of the present invention. The three half-bridge circuits of the three-phase bridge comprise a first half-bridge circuit formed by T1 and T2, a second half-bridge circuit formed by T3 and T4 and a third half-bridge circuit formed by T5 and T6, wherein the direct current terminals DC+1/DC-1 and DC+2/DC-2 of the first half-bridge circuit and the second half-bridge circuit are arranged in a mirror symmetry mode, and the direct current terminals DC+2/DC-2 and DC+3/DC-3 of the second half-bridge circuit are arranged in a mirror symmetry mode. Still further, the power line layers of the first half-bridge circuit formed by the T1 and the T2 and the power line layers of the second half-bridge circuit formed by the T3 and the T4 are arranged in a mirror symmetry manner, so that the positions of the dc+2 and the DC-2 in the second half-bridge single circuit in the conventional three-phase bridge power module in fig. 2 are exchanged, and the technical effect of the same-potential arrangement of the adjacent terminals of the three-phase bridge power module in the first embodiment is achieved.
In a third embodiment shown in fig. 6, the power line layer routing direction of the first half-bridge circuit formed by T1 and T2 is from the positive terminal dc+1 to T1, where T1 goes to the right through the lead on the upper surface of the chip to T2, and then T2 goes to the right through the lead on the upper surface of the chip to the power line layer connected to DC-1, and goes to the negative terminal DC-1 again; the wiring direction of the power circuit layer of the second half-bridge circuit formed by the T3 and the T4 is that the positive terminal DC+2 goes upward to the T3, the T3 goes rightward to the T4 through a lead wire on the upper surface of the chip, the T4 goes rightward to the power circuit layer connected with the DC-2 through a lead wire on the upper surface of the chip, and then goes downward to the negative terminal DC-2; and the wiring direction of the power circuit layer of the third half-bridge circuit formed by the T5 and the T6 is upward from the positive terminal DC+3 to the T5, the T5 downward passes through the lead wire on the upper surface of the chip to the T6, and the T6 downward passes through the lead wire on the upper surface of the chip to the negative terminal DC-3. Therefore, the wirings of the power switching devices T1 to T2 in the first half-bridge circuit are parallel to the mirror symmetry plane; the third half-bridge circuit has the power switches T5 to T6 all running from left to right, which is perpendicular to the mirror plane.
In the third embodiment (as shown in fig. 6), the above layout can achieve the effect of uniformly distributing adjacent chips between half-bridge circuits, that is, the distances between T1 and T3, between T3 and T5, between T2 and T4, and between T4 and T6 are close, so as to reduce the thermal coupling effect between chips and increase the heat dissipation capability.
Fig. 7 is a circuit topology diagram of the fourth, fifth and sixth embodiments, fig. 8 and fig. 9, and fig. 10 is a layout diagram of the fourth, fifth and sixth embodiments. In the fourth embodiment, the fifth embodiment and the sixth embodiment, on the basis of the first embodiment, the second embodiment and the third embodiment, the DC power terminals having the same potential adjacent to the DC side (DC side) are combined, specifically, DC-1 and DC-2 are combined, dc+2 and dc+3 are combined, the number of the DC power terminals is reduced from 6 to at most 4, and the terminal pitch of the DC terminals can be further reduced, so that the package size has a further reduced space.
As shown in fig. 11, embodiment seven. When the T1, T2, T3, T4, T5 and T6 of the three-phase bridge power module are all single power switch devices, the power circuit layers of the first half-bridge circuit, the second half-bridge circuit and the third half-bridge circuit are respectively arranged on three substrates, and the substrates can be further narrowed, so that after the number of the power terminals at the direct current side is reduced to 4, the packaging size of the power module can be further reduced. When three independent substrates and power terminals are assembled, the three independent substrates and the power terminals are required to be limited through the fixture respectively, so that the assembly accuracy is reduced, and the packaging yield of the power module is affected.
As shown in fig. 12, embodiment eight. When the T1, T2, T3, T4, T5 and T6 of the three-phase bridge power module are all single power switch devices, the corresponding substrates of the single half-bridge circuit can be narrowed, so that the substrates of the second half-bridge circuit and the third half-bridge circuit can be combined, the number of the substrates is reduced, the assembly precision of the substrates and terminals is improved, and the assembly difficulty is reduced. The embodiment may also combine the substrates of the first and second half-bridge circuits.
Embodiment nine is shown in fig. 13. When the T1, T2, T3, T4, T5 and T6 of the three-phase bridge power module are all single power switch devices, the corresponding substrates of the single half-bridge circuit can be narrowed, so that the substrates of the first half-bridge circuit, the second half-bridge circuit and the third half-bridge circuit can be combined, the number of the substrates is reduced to one, the assembly precision of the substrates and the terminals is further improved, the assembly difficulty is reduced, and the packaging yield is improved.
The power switch device in the invention is not limited to a power chip Insulated Gate Bipolar Transistor (IGBT), but also comprises a silicon-based metal oxide semiconductor field effect transistor (SiMOSFET), a silicon carbide-based metal oxide semiconductor field effect transistor (SiCNOSFET), a gallium nitride high electron mobility transistor (GaNHEMT) and other first, second, third and fourth generation power semiconductor devices.
In the invention, the power routing of the upper surface of the chip is not limited to power routing (aluminum wire or copper wire bonding), but also comprises a copper clip (Cuclip) process, a direct frame connection (DLA) process, a wire-free connection (Wireless) process and the like.
In the present invention, the substrate used for the power line layer is not limited to a direct copper clad substrate (DBC), but includes an active metal brazing substrate (AMB), a metal insulating substrate (IMS), and the like.
The foregoing is only a preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art, who is within the scope of the present invention, should be covered by the protection scope of the present invention by making equivalents and modifications to the technical solution and the inventive concept thereof.
Claims (10)
1. The three-phase bridge power module circuit packaging structure is characterized by comprising three half-bridge circuits, wherein alternating current terminals of the three half-bridge circuits are respectively connected with U, V, W phases, and two direct current terminals of each half-bridge circuit are respectively a positive direct current terminal and a negative direct current terminal;
the positive direct current terminals and the negative direct current terminals of the three half-bridge circuits are arranged in any one of the following modes:
mode one: positive dc terminal, negative dc terminal, positive dc terminal, negative dc terminal;
mode two: negative, positive, negative, positive;
in any one mode, the spacing between adjacent equipotential terminals is smaller than the spacing between adjacent non-equipotential terminals.
2. The three-phase bridge power module circuit package structure of claim 1, wherein the spacing between adjacent common potential terminals is less than 5mm.
3. The three-phase bridge power module circuit package structure according to claim 1, wherein the three half-bridge circuits include a first half-bridge circuit located at one side, a second half-bridge circuit located at the middle, and a third half-bridge circuit located at the other side, wherein the dc terminals of the first half-bridge circuit and the dc terminals of the second half-bridge circuit are arranged in mirror symmetry, and the dc terminals of the second half-bridge circuit and the dc terminals of the third half-bridge circuit are arranged in mirror symmetry.
4. The three-phase bridge power module circuit package structure of claim 3, wherein the power line layers of the first half-bridge circuit and the second half-bridge circuit are arranged in mirror symmetry, and the power line layers of the second half-bridge circuit and the third half-bridge circuit are arranged in mirror symmetry.
5. The three-phase bridge power module circuit package structure of claim 1, 3 or 4, wherein adjacent common-potential dc terminals are connected and combined to form the same dc terminal.
6. The three-phase bridge power module circuit package structure of claim 4, wherein the power line layer routing direction between the power switching devices of the first half-bridge circuit, the power line layer routing direction between the power switching devices of the second half-bridge circuit, and the power line layer routing direction between the power switching devices of the third half-bridge circuit are all parallel to the mirror symmetry plane.
7. The three-phase bridge power module circuit package structure of claim 4, wherein the power line layer routing direction between the power switching devices of the first half-bridge circuit, the power line layer routing direction between the power switching devices of the second half-bridge circuit, and the power line layer routing direction between the power switching devices of the third half-bridge circuit are all perpendicular to the mirror plane.
8. The three-phase bridge power module circuit package structure of claim 3, wherein the three half-bridge circuits comprise a first half-bridge circuit located on one side, a second half-bridge circuit located in the middle, and a third half-bridge circuit located on the other side, wherein the power line layers of the first half-bridge circuit and the second half-bridge circuit are arranged in mirror symmetry;
the wiring direction of the power line layer between the power switch devices of the first half-bridge circuit and the wiring direction of the power line layer of the second half-bridge circuit are perpendicular to the mirror symmetry plane;
and the wiring direction of a power line layer between power switching devices of the third half-bridge circuit is parallel to the mirror symmetry plane.
9. The three-phase bridge power module circuit package structure according to claim 6 or 7, wherein adjacent common-potential dc terminals are connected and combined into the same dc terminal.
10. The three-phase bridge power module circuit package structure according to claim 1, wherein the number of the substrates is one or two when the line layer width is smaller than the terminal width on the direct current side.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310614119.7A CN116633166A (en) | 2023-05-29 | 2023-05-29 | Three-phase bridge power module circuit packaging structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310614119.7A CN116633166A (en) | 2023-05-29 | 2023-05-29 | Three-phase bridge power module circuit packaging structure |
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| CN116633166A true CN116633166A (en) | 2023-08-22 |
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| CN202310614119.7A Pending CN116633166A (en) | 2023-05-29 | 2023-05-29 | Three-phase bridge power module circuit packaging structure |
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| CN (1) | CN116633166A (en) |
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- 2023-05-29 CN CN202310614119.7A patent/CN116633166A/en active Pending
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