CN116631696A - Magnetic shielding device and electron beam detection equipment - Google Patents
Magnetic shielding device and electron beam detection equipment Download PDFInfo
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- CN116631696A CN116631696A CN202210130533.6A CN202210130533A CN116631696A CN 116631696 A CN116631696 A CN 116631696A CN 202210130533 A CN202210130533 A CN 202210130533A CN 116631696 A CN116631696 A CN 116631696A
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- 238000010894 electron beam technology Methods 0.000 title claims abstract description 189
- 238000001514 detection method Methods 0.000 title abstract description 24
- 230000002093 peripheral effect Effects 0.000 claims description 14
- 229910000889 permalloy Inorganic materials 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 5
- 239000000470 constituent Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 44
- 230000004907 flux Effects 0.000 abstract description 36
- 238000003384 imaging method Methods 0.000 abstract description 18
- 238000004804 winding Methods 0.000 description 16
- 238000013461 design Methods 0.000 description 12
- 238000004088 simulation Methods 0.000 description 12
- 230000008859 change Effects 0.000 description 10
- 238000009434 installation Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 230000035699 permeability Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910001069 Ti alloy Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910001209 Low-carbon steel Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910000595 mu-metal Inorganic materials 0.000 description 1
- 238000000399 optical microscopy Methods 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B11/00—Communication cables or conductors
- H01B11/02—Cables with twisted pairs or quads
- H01B11/06—Cables with twisted pairs or quads with means for reducing effects of electromagnetic or electrostatic disturbances, e.g. screens
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B9/00—Power cables
- H01B9/02—Power cables with screens or conductive layers, e.g. for avoiding large potential gradients
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
The embodiment of the application provides a magnetic shielding device and electron beam detection equipment, wherein the magnetic shielding device comprises at least one first magnetic shielding piece, the first magnetic shielding piece is spirally wound on the periphery of an electron beam travel path, and the first magnetic shielding piece is used for shielding a magnetic field on the electron beam travel path. According to the magnetic shielding device and the electron beam detection equipment provided by the embodiment of the application, the horizontal magnetic flux density of the magnetic shielding piece perpendicular to the electron beam at the end part can be reduced, the magnetic shielding effect of the magnetic shielding piece can be improved, and the imaging quality of the electron beam detection equipment is improved.
Description
Technical Field
The embodiment of the application relates to the technical field of electron beam detection equipment, in particular to a magnetic shielding device and electron beam detection equipment.
Background
With the increasing demand for detecting products in the semiconductor, microelectronic, etc. industries, electron beam detection arrangements such as scanning electron microscopes are becoming an important sample analysis and detection device that focuses an electron beam onto a sample surface to generate an image of the sample surface, thereby analyzing the sample for components, etc.
The electron beam of the electron beam detection device is interfered by an external magnetic field in the process of being emitted to the sample, so that the travel path of the electron beam is influenced, and the imaging resolution is reduced. In the related art, a magnetic shielding sleeve, such as a permalloy sleeve, is sleeved on the periphery of the electron beam to shield the external magnetic field, so as to ensure that the electron beam has lower horizontal magnetic field strength on the travel path. Because of the interference of the internal structure of the electron beam detection equipment, the magnetic shielding sleeve comprises a plurality of pipe sections which are arranged at intervals along the travel path of the electron beam, and gaps among the pipe sections are used for avoiding structural members at the periphery of the electron beam.
However, the horizontal magnetic flux density perpendicular to the electron beam at the end of the tube section of the magnetic shielding sleeve is large, so that the magnetic shielding effect of the magnetic shielding sleeve is reduced, and the imaging quality of the electron beam detection equipment is seriously affected.
Disclosure of Invention
The embodiment of the application provides a magnetic shielding device and electron beam detection equipment, which can reduce the horizontal magnetic flux density of a magnetic shielding piece perpendicular to an electron beam at the end part, improve the magnetic shielding effect of the magnetic shielding piece and improve the imaging quality of the electron beam detection equipment.
In one aspect, embodiments of the present application provide a magnetic shielding device including at least one first magnetic shield spirally wound around an outer circumference of an electron beam travel path, the first magnetic shield for shielding a magnetic field on the electron beam travel path.
According to the embodiment of the application, the first magnetic shielding piece is spirally wound on the periphery of the electron beam travel path, so that the wound first magnetic shielding piece can shield a magnetic field perpendicular to the electron beam travel path, and for the magnetic field along the electron beam travel path, as the first magnetic shielding piece is spirally wound on the periphery of the electron beam travel path, the cross section of the first magnetic shielding piece is reduced relative to the cross section of the magnetic shielding piece of the sleeve structure in the direction perpendicular to the electron beam travel path, and as the contact area between the magnetic field along the electron beam travel path and the end part of the first magnetic shielding piece is reduced, the horizontal magnetic flux density of the magnetic field at the end part of the first magnetic shielding piece in the direction perpendicular to the electron beam can be reduced, in other words, the distortion of the magnetic field at the end part of the first magnetic shielding piece can be reduced, in other words, the electron beam can receive smaller Lorentz force on the travel path, the shielding effect on the magnetic field distortion along the electron beam travel path direction is improved, and the imaging quality of the electron beam detection equipment can be improved.
In an alternative design, the first magnetic shield is a helically wound magnetic shield wire.
The first magnetic shield is formed by spirally winding the magnetic shield line, so that the line diameter of the magnetic shield line can be made thin enough, that is, the wall thickness of the first magnetic shield can be reduced, the contact area between the magnetic field along the electron beam travel path direction and the end of the first magnetic shield can be reduced, the horizontal magnetic flux density of the magnetic field at the end of the first magnetic shield along the direction perpendicular to the electron beam can be reduced, the distortion of the magnetic field at the end of the first magnetic shield can be reduced, the electron beam can receive smaller lorentz force on the travel path of the electron beam, the shielding effect on the distortion of the magnetic field along the electron beam travel path direction can be improved, and the imaging quality of the electron beam detection device can be improved.
In addition, the first magnetic shielding piece is formed in a magnetic shielding line winding mode, the surface area of the outer peripheral wall of the first magnetic shielding piece is the product of half of the surface area of each circle of magnetic shielding line and the number of turns, and therefore, each circle of magnetic shielding line is located on one side of the outer peripheral wall of the first magnetic shielding piece and is a semicircular surface, the surface area of the outer peripheral wall of the first magnetic shielding piece can be effectively increased, the magnetic permeability of the first magnetic shielding piece in the direction perpendicular to the travel path of the electron beam can be increased, and the shielding effect of the first magnetic shielding piece on the magnetic field in the direction perpendicular to the travel path of the electron beam can be effectively improved.
In an alternative design, the first magnetic shield has a wire diameter of 0.3mm to 1.2mm.
In this way, the contact area between the first magnetic shield end and the magnetic field in the direction along the electron beam travel path can be reduced, and the shielding effect against distortion of the magnetic field in the direction along the electron beam travel path can be improved. In addition, the wall thickness of the first magnetic shield in the direction perpendicular to the electron beam travel path is a wire diameter, and a larger wire diameter can improve the shielding effect against the magnetic field in the direction perpendicular to the electron beam travel path.
In an alternative design, the pitch of the first magnetic shield is less than or equal to 2.5mm.
In this way, the interval between each winding of the first shielding member can be reduced, and the shielding effect on the magnetic field in the direction perpendicular to the travel path of the electron beam can be improved.
In an alternative design, the first magnetic shield includes a plurality of first magnetic shields spaced along the path of travel of the electron beam.
By providing a plurality of first magnetic shields, the magnetic field over the entire travel path of the electron beam can be shielded well. In addition, a plurality of first magnetic shields are arranged at intervals, and gaps between two adjacent first magnetic shields can avoid other component structures of the magnetic shielding device, so that each first magnetic shield can be conveniently installed.
In an alternative design, the spacing between adjacent first magnetic shields is 8mm to 12mm.
In this way, on the one hand, the installation of each first magnetic shielding piece can be facilitated, and other structural components of the magnetic shielding device can be avoided; in addition, the distance between two adjacent first magnetic shields can be prevented from being too large, and the magnetic field in the direction perpendicular to the travel path of the electron beam can be shielded well.
In an alternative design, the inner diameter of each first magnetic shield is 40mm to 60mm, and the inner diameters of any two first magnetic shields are not equal.
In this way, on the one hand, the first magnetic shielding piece can completely surround the electron beam in the first magnetic shielding piece, and a better shielding effect can be achieved on the magnetic field of the periphery of the electron beam. On the other hand, each magnetic shielding piece can be stable and the laminating of other structures around, can guarantee the steadiness of every magnetic shielding piece installation, in other words, through setting up the internal diameter of two arbitrary first magnetic shielding pieces to inequality, can play fine dodging the effect to other structures in electron beam travel path periphery for every first shielding piece realizes fine cooperation with other structures.
In an alternative embodiment, the first magnetic shield is made of permalloy. Thus, the permalloy is adopted to manufacture the first magnetic shielding piece, so that the first magnetic shielding piece has good magnetic permeability, and the magnetic field on the electron beam travel path can be shielded well.
In an alternative design, the magnetic shielding device further comprises a second magnetic shield; the second magnetic shield is located at the outer periphery of the electron beam travel path, and the first magnetic shield is located on the peripheral wall of the second magnetic shield.
In this way, due to the presence of the first magnetic shield, the horizontal magnetic flux density of the magnetic field at the end of the first magnetic shield in the direction perpendicular to the electron beam can be reduced, that is, the distortion of the magnetic field at the end of the first magnetic shield, in other words, the electron beam can be made to receive a smaller lorentz force on its travel path, thereby improving the shielding effect against the distortion of the magnetic field in the direction along the travel path of the electron beam, and improving the imaging quality of the electron beam detection apparatus; the presence of the second magnetic shield can make up for the gap between the first magnetic shield windings, and can improve the shielding effect against the magnetic field in the direction perpendicular to the electron beam travel path.
In addition, the first magnetic shield is provided on the peripheral wall of the second magnetic shield, and the mounting position can be provided for the first magnetic shield by the second magnetic shield, so that the first magnetic shield can be mounted.
In an alternative embodiment, the second magnetic shield is a magnetic shield sleeve or a screw sleeve.
In an alternative design, the second magnetic shield comprises a plurality of magnetic shield sleeves spaced along the path of travel of the electron beam.
Thus, the magnetic field on the whole travel path of the electron beam can be well shielded. In addition, a plurality of second magnetic shields are arranged at intervals, and gaps between two adjacent second magnetic shields can avoid other component structures of the magnetic shielding device, so that each second magnetic shield can be conveniently installed.
On the other hand, the embodiment of the application also provides an electron beam detection device, which comprises an electron emission source and a magnetic shielding device provided by any optional design mode according to the first aspect of the application;
the electron emission source is used for emitting electron beams, and the magnetic shielding device is positioned at the periphery of the travel path of the electron beams.
Drawings
FIG. 1 is a two-dimensional simulation effect diagram of a magnetic shielding device provided by an embodiment of the application in the absence of a magnetic field along the travel path direction of an electron beam;
FIG. 2 is a two-dimensional simulation effect diagram of a magnetic shielding device provided by an embodiment of the application when a magnetic field exists along the travel path direction of an electron beam;
FIG. 3 is a graph showing the effect of a magnetic shielding device according to an embodiment of the present application on the magnetic shielding effect due to the change of the magnetic flux density along the path of the electron beam;
fig. 4 is a schematic structural view of a first magnetic shield in another magnetic shield apparatus provided by an embodiment of the present application;
fig. 5 is a front view of a first magnetic shield in another magnetic shield apparatus provided by an embodiment of the present application;
FIG. 6 is a cross-sectional view taken along line A-A of FIG. 5;
FIG. 7 is a cross-sectional view taken along line C-C of FIG. 5;
fig. 8 is a schematic structural view of a first magnetic shield in yet another magnetic shield apparatus provided by an embodiment of the present application;
fig. 9 is a schematic structural view of a first magnetic shield in yet another magnetic shield apparatus provided by an embodiment of the present application;
FIG. 10 is a graph showing the variation of magnetic flux density in a direction perpendicular to the path of travel of an electron beam at different diameters of a point magnetic shielding device according to an embodiment of the present application;
fig. 11 is a schematic structural view of yet another magnetic shielding device provided by an embodiment of the present application;
fig. 12 is a front view of still another magnetic shield apparatus provided by an embodiment of the present application;
Fig. 13 is a schematic structural view of still another magnetic shielding device provided by an embodiment of the present application;
fig. 14 is a front view of still another magnetic shield apparatus provided by an embodiment of the present application;
FIG. 15 is a two-dimensional simulation effect diagram of yet another magnetic shielding apparatus provided by an embodiment of the present application when a magnetic field is present along the path of travel of an electron beam;
FIG. 16 is a graph showing the effect of a magnetic shielding effect of a change in magnetic flux density along the path of travel of an electron beam in accordance with another magnetic shielding apparatus provided by an embodiment of the present application;
fig. 17 is a schematic structural view of still another magnetic shielding device provided by an embodiment of the present application;
FIG. 18 is a cross-sectional view of a magnetic shielding device provided by an embodiment of the present application;
fig. 19 is a schematic structural view of still another magnetic shielding device provided by an embodiment of the present application;
fig. 20 is a cross-sectional view of a magnetic shield apparatus provided in an embodiment of the present application.
Reference numerals illustrate:
10-a first magnetic shield; 20-a second magnetic shield.
Detailed Description
The terminology used in the description of the embodiments of the application herein is for the purpose of describing particular embodiments of the application only and is not intended to be limiting of the application.
Scanning electron microscopy (scanning electron microscope, SEM for short) is a large precision instrument for high resolution micro-area morphology analysis, which is a large precision instrument interposed between transmission electron microscopy and optical microscopy, and mainly uses a focused very narrow high-energy electron beam to scan Yang Ping, excite various physical information through the interaction between the beam and the substance, and collect, amplify and re-image the information to achieve the purpose of representing the substance's surrounding morphology. The scanning electron microscope has resolution up to 1nm, magnification up to 30 ten thousand times and over, great depth of field, wide visual field, high stereo imaging effect, etc. and may be used widely in observing the form and composition of various solid matters.
With the increasing detection demands of products in the semiconductor, microelectronic and other industries, a scanning electron microscope becomes an important sample analysis and detection device.
It can be understood that electrons are easily interfered by a magnetic field in a moving process, for example, when electrons move in the magnetic field, lorentz force can be generated under the condition that a certain included angle exists between the electron moving direction and the magnetic field direction, so that electron beams deflect under the action of the lorentz force, and the electron beams cannot be well focused, so that the imaging resolution of a scanning electron microscope is reduced, and the imaging effect is poor.
The embodiment of the application provides electron beam detection equipment, in particular to a scanning electron microscope which can be particularly applied to detection of semiconductors, microelectronics and the like in the semiconductor industry, and can be applied to detection of food monitoring, medical equipment and the like. The scanning electron microscope is provided with a magnetic shielding sleeve on a lens barrel, in other words, a magnetic shielding sleeve is arranged on a travel path of an electron beam, and in addition, the magnetic shielding sleeve is positioned on the periphery of the travel path of the electron beam; that is, the electron beam is always moving within the magnetic shield sleeve while scanning the sample. In this way, the magnetic field in the external environment (such as the magnetic field generated by other electronic devices) on the electron beam travel path is shielded by the magnetic shielding sleeve, so that the lower magnetic flux density perpendicular to the electron beam travel path can be ensured, and the lorentz force generated on the electron beam by the external magnetic field perpendicular to the electron beam travel path can be reduced or lowered.
Fig. 1 is a two-dimensional simulation effect diagram of a magnetic shielding device provided by an embodiment of the application when no magnetic field exists along the travel path direction of an electron beam.
Referring to fig. 1, a magnetic shield sleeve is provided on a travel path of an electron beam, and the magnetic shield sleeve can satisfactorily shield a magnetic field in a direction perpendicular to the travel path of the electron beam in the absence of an external magnetic field in a direction along the travel path of the electron beam. The electron beam travel path direction may be a vertical direction (i.e., y direction) in fig. 1, and the loading direction of the external magnetic field may be a horizontal direction (i.e., x direction) in fig. 1 in the simulation.
It will be understood, of course, that in the two-dimensional simulation shown in fig. 1, in actual production, magnetic fields may be applied in all directions in a plane perpendicular to the path of travel of the electron beam for simulation testing. Wherein, the magnetic flux density of the external loading magnetic field in fig. 1 is: simulation tests were performed with Bx of 500nT, by of 500nT, and Bz of 0 nT. Where Bx is the magnetic flux density in a first direction (e.g., x-direction in fig. 1) in a plane perpendicular to the electron beam travel path, by is the magnetic flux density in a second direction (e.g., inward or outward in fig. 1 perpendicular to the paper) in a plane perpendicular to the electron beam travel path, and Bz is the magnetic flux density along the electron beam travel path (e.g., y-direction in fig. 1).
It should be noted that, the numerical values and the numerical ranges related to the embodiments of the present application are approximate values, and may have a certain range of errors under the influence of the manufacturing process, and those errors may be considered to be negligible by those skilled in the art.
It will be appreciated that external magnetic fields are typically present in all directions in space, but that magnetic fields in all directions in space can generally be resolved into components along the path of the electron beam and components perpendicular to the path of the electron beam.
Generally, the magnetic field along the path of the electron beam will not generate lorentz force on the electron beam due to the same direction of the magnetic field and the direction of the electron beam movement, that is, will not shift the movement of the electron beam and will not affect the imaging quality of the scanning electron microscope.
Fig. 2 is a two-dimensional simulation effect diagram of a magnetic shielding device provided by an embodiment of the application when a magnetic field exists along the travel path direction of an electron beam.
Referring to fig. 2, after the magnetic shield sleeve is sleeved on the outer circumference of the electron beam travel path, when the magnetic field along the electron beam travel path is in contact with the end face of the magnetic shield sleeve, the magnetic field along the electron beam travel path is distorted by bending at the end face of the magnetic shield sleeve due to the propagation of the magnetic field along the magnetic shield sleeve having lower magnetic resistance, that is, the magnetic field along the electron beam travel path has a horizontal component (that is, a component perpendicular to the electron beam travel path) at the end face of the magnetic shield sleeve, and the lorentz force is generated by the component on the movement of the electron beam, so that the imaging quality of the scanning electron microscope is affected.
Specifically, in fig. 2, the magnetic flux density of the externally applied magnetic field is: bx is 500nT, by is 500nT, and Bz is-500 nT. Where Bz is "-" in-500 nT indicates the magnetic field direction (e.g., the y-direction in FIG. 2 is a positive direction, "-" may indicate that the direction of the magnetic field is pointing in the negative direction of y).
Fig. 3 is a graph showing the effect of a magnetic shielding device according to an embodiment of the present application on the magnetic shielding effect due to the change of the magnetic flux density along the path of the electron beam.
Referring to fig. 3, when the magnetic flux density of the external magnetic field in the negative direction of y in fig. 2 varies from 100nT to 1000nT, the measurement point is observed, wherein in fig. 3, a curve a is the trend of-100 nT, b is the trend of-300 nT, c is the trend of-500 nT, d is the trend of-800 nT, and e is the trend of-1000 nT; it can be seen that as the external magnetic flux density increases in the vertical direction, the magnetic field shielded inside the sleeve tends to increase in the horizontal direction; distortion of the magnetic flux density in the horizontal direction is also more and more serious at the end face of the magnetic shield sleeve.
Wherein the measuring point is at a position 6mm from the central axis of the sleeve. In this way, distortion of the magnetic field, which cannot be observed due to the shielding effect of the shielding sleeve when viewed along the sleeve central axis, can be avoided. More accurate simulation results can be obtained.
It should be noted that, in general, in addition to the magnetic shielding sleeve, the lens barrel of the scanning electron microscope is further provided with some other structures or components, so that, for facilitating the installation of the magnetic shielding sleeve, the magnetic shielding sleeve is prevented from interfering with or interfering with other structures of the lens barrel, and is generally provided with a plurality of magnetic shielding sleeves, and the magnetic shielding sleeves are arranged along the axial direction of the magnetic shielding sleeve at intervals, i.e. the magnetic shielding sleeves are arranged in a disconnected manner, so that the disconnected positions of the magnetic shielding sleeves are all provided with end surfaces. Referring to fig. 2, the magnetic field at the break of the plurality of magnetic shield sleeves is distorted in the direction shown by the y-axis. Referring to fig. 3, distortion occurs at the break-off portions of the plurality of magnetic shield tubes without a certain distance along the z-coordinate, and the distortion becomes more serious as the external magnetic flux density increases.
Therefore, the embodiment of the application provides a magnetic shielding device which can be applied to the scanning electron microscope, and particularly can be applied to a lens barrel of the scanning electron microscope; specifically, at least one first magnetic shield 10 is included, and the first magnetic shield 10 is spirally wound around the outer periphery of the electron beam travel path. For example, the electron beam emitted from the electron gun is spirally wound around the tip of the electron gun, and moves in the spiral first magnetic shield 10. In this way, the first magnetic shield 10 can shield the external magnetic field on the electron beam travel path, and in addition, since the first magnetic shield 10 is spirally wound around the outer periphery of the electron beam travel path with respect to the magnetic field along the electron beam travel path, the cross section of the first magnetic shield 10 is reduced with respect to the cross section of the magnetic shield of the sleeve structure in the direction perpendicular to the electron beam travel path, it is understood that the contact area of the magnetic field along the electron beam travel path with the end of the first magnetic shield 10 is reduced, and thus the horizontal magnetic flux density of the magnetic field at the end of the first magnetic shield 10 in the direction perpendicular to the electron beam can be reduced, that is, the distortion of the magnetic field at the end of the first magnetic shield 10 can be reduced.
Fig. 4 is a schematic structural view of a first magnetic shield in another magnetic shield apparatus provided in an embodiment of the present application, fig. 5 is a front view of the first magnetic shield in the other magnetic shield apparatus provided in the embodiment of the present application, and fig. 6 is a sectional view taken along the line A-A in fig. 5.
To avoid distortion of the magnetic field along the electron beam path at the end face of the magnetic shielding sleeve, the imaging quality of the scanning electron microscope is affected. Referring to fig. 4 to 6, the embodiment of the present application provides a magnetic shielding device including at least one first magnetic shield 10, the first magnetic shield 10 being spirally wound around the outer circumference of the electron beam travel path, the first magnetic shield 10 for shielding a magnetic field on the electron beam travel path.
Specifically, referring to fig. 4, the first magnetic shield 10 can be wound by spirally winding a magnetically conductive material. Of course, in some possible examples, the first magnetic shield 10 may also be a magnetically conductive magnetic shield sleeve that is helically cut to form a helical first magnetic shield 10.
When specifically set, the first magnetic shield 10 may be mounted in the barrel of the scanning electron microscope by bolts, screws or the like. Of course, in some examples, the first magnetic shield 10 may also be mounted within the barrel of the scanning electron microscope by means of adhesive or snap fit, or the like.
It is understood that the first magnetic shield 10 may be abutted against the inner wall of the barrel of the scanning electron microscope when the first magnetic shield 10 is mounted. In this way, the electron beam emitted from the electron gun can move entirely within the first magnetic shield 10, and the shielding effect of the first magnetic shield 10 against the external magnetic field can be ensured.
In winding the first magnetic shield 10, the pitch of the first magnetic shield 10 may be wound at a fixed pitch. Of course, in some examples, the pitch of the first magnetic shield 10 can also be a variable pitch. For example, in the y-direction in fig. 4, the pitch of the first magnetic shield 10 can be gradually increased or gradually decreased. In other examples, the pitch of the first magnetic shield 10 can also be gradually increased and then gradually decreased, or gradually decreased and then increased in assembly, along the y-direction in fig. 4. It will be appreciated that only the pitch of the first magnetic shield 10 is shown in fig. 4 as a fixed pitch by way of example.
In addition, when the first magnetic shield 10 is wound, the first magnetic shield 10 having the same diameter may be formed by winding at a fixed diameter. Of course, in some possible examples, the first magnetic shields 10 may also be individually wound to different diameters, that is, the diameter of the first magnetic shield 10 may be a variable diameter.
Referring to fig. 5, when a magnetic field in a direction along the electron beam travel path, for example, a magnetic field B in fig. 5, contacts the first magnetic shield 10 at an end face of the first magnetic shield 10, referring to fig. 6, the contact area thereof may be only a portion of the cross section of the first magnetic shield 10. That is, the first magnetic shield 10 is to be formed by spiral winding, and thus, the contact area of the magnetic field B with the first magnetic shield 10 can be reduced, and the degree of distortion occurring after the magnetic field B contacts the first magnetic shield 10 can be reduced. In other words, the magnetic flux density of the horizontal component of the magnetic field B generated at the end face/end portion of the first magnetic shield 10 can be reduced, so that the shielding effect of the magnetic shielding device against the external magnetic field can be improved.
It should be noted that, in fig. 5, the direction of the magnetic field B is shown as a vertically downward direction, and of course, in some examples, the direction of the magnetic field B may be a vertically upward direction or a magnetic field having a certain angle with respect to the axis of the first magnetic shield 10 (i.e., the travel path direction of the electron beam), and the magnetic field has a magnetic field component in the vertical direction in fig. 5.
In the embodiment of the application, the first magnetic shielding member 10 is spirally wound around the periphery of the electron beam travel path, so that the wound first magnetic shielding member 10 can shield the magnetic field perpendicular to the electron beam travel path, and for the magnetic field along the electron beam travel path, since the first magnetic shielding member 10 is spirally wound around the periphery of the electron beam travel path, the cross section of the first magnetic shielding member 10 is reduced relative to the cross section of the magnetic shielding member of the sleeve structure in the direction perpendicular to the electron beam travel path, and as a result, the contact area between the magnetic field along the electron beam travel path and the end of the first magnetic shielding member 10 is reduced, so that the horizontal magnetic flux density of the magnetic field at the end of the first magnetic shielding member 10 in the direction perpendicular to the electron beam can be reduced, in other words, the distortion of the magnetic field at the end of the first magnetic shielding member 10 can be reduced, in other words, the electron beam can receive smaller lorentz force on the travel path, the shielding effect on the magnetic field distortion along the electron beam travel path can be improved, and the imaging quality of the electron beam detection device can be improved.
With continued reference to fig. 4 and 5, in an alternative design, the first magnetic shield 10 is a helically wound magnetic shield wire.
In the concrete production and manufacture, the magnetic conductive material can be manufactured into a thin linear structure. For example, pure iron, magnetically permeable stainless steel, or low carbon steel may be used. In some alternative examples, the magnetic conductive material may be a high magnetic conductive amorphous alloy ((Fe Si B) 98 (Cu Nb) 2) or the like, which is formed into a thin wire shape, and then the magnetic shield wire of the thin wire shape is spirally wound in the form shown in fig. 4 or 5, thereby forming the first magnetic shield 10.
It should be noted that the foregoing materials are merely specific examples, and are not meant to limit the embodiments of the present application to the specific magnetic conductive materials. For example, in some examples, the magnetically permeable material may also be permalloy (also known as mu-metal). Such as 45 permalloy, 78 permalloy, or super permalloy, etc. In a specific example, the magnetic shielding material may be 1j85 permalloy.
Thus, the magnetic conductive material is firstly made into the thin wire, and the diameter of the thin wire can be made small enough. It can be understood that the wire diameter of the thin wire is the thickness of the first magnetic shield 10 after the thin wire is wound into the spiral-shaped first magnetic shield 10. Since the first magnetic shield 10 is wound by a thin wire, the thickness of the first magnetic shield 10 is thinner than that in the form of a magnetic shield sleeve. In other words, the cross-sectional area of the first magnetic shield 10 can be reduced.
Fig. 7 is a sectional view taken along line C-C of fig. 5. In the embodiment of the present application, when the first magnetic shield 10 is formed by winding the magnetic shield lines, the coils formed by the adjacent magnetic shield lines may be arranged at intervals along the axial direction of the first magnetic shield 10 (for example, as shown in fig. 7). In some possible examples, coils formed by adjacent magnetic shield lines may also be arranged in a continuous stack in contact with each other in the axial direction of the first magnetic shield 10.
Fig. 8 is a schematic structural view of a first magnetic shield in a further magnetic shield apparatus according to an embodiment of the present application, and fig. 9 is a schematic structural view of a first magnetic shield in a further magnetic shield apparatus according to an embodiment of the present application.
In the embodiment of the present application, in forming the first magnetic shield 10 by the magnetic shield line winding, the first magnetic shield 10 of a cylindrical shape (for example, as shown with reference to fig. 4) may be wound. Of course, in some possible examples, as shown with reference to fig. 8 and 9, it is also possible to wind the magnetic shield wire in a triangular prism shape (such as shown in fig. 8) or wind the magnetic shield wire in a rectangular parallelepiped shape (such as shown in fig. 9). Of course, in some possible examples, the magnetic shielding wire may be wound into a cylinder with a polygonal cross section or other anisotropic structure, which may be specifically determined according to the shape of the inner wall of the lens barrel of the scanning electron microscope, which is not limited in the embodiment of the present application.
The first magnetic shield 10 is formed by spirally winding the magnetic shield wire such that the wire diameter of the magnetic shield wire can be made sufficiently thin, that is, the wall thickness of the first magnetic shield 10 can be reduced, the contact area of the magnetic field in the direction along the electron beam travel path with the end portion of the first magnetic shield 10 can be reduced, the horizontal magnetic flux density of the magnetic field in the direction perpendicular to the electron beam at the end portion of the first magnetic shield 10 can be reduced, the distortion of the magnetic field at the end portion of the first magnetic shield 10 can be reduced, the electron beam can be made to receive a smaller lorentz force on the travel path thereof, the shielding effect against the distortion of the magnetic field in the direction along the electron beam travel path can be improved, and the imaging quality of the electron beam detecting apparatus can be improved.
In addition, the first magnetic shield 10 is formed in a manner of winding magnetic shielding wires, the surface area of the outer peripheral wall of the first magnetic shield 10 is the product of half the surface area of each circle of magnetic shielding wires and the number of turns, and therefore, each circle of magnetic shielding wires is located on one side of the outer peripheral wall of the first magnetic shield 10 and is a semicircular arc surface, the surface area of the outer peripheral wall of the first magnetic shield 10 can be effectively increased, the magnetic permeability of the first magnetic shield 10 in the direction perpendicular to the travel path direction of the electron beam can be increased, and the shielding effect of the first magnetic shield 10 on the magnetic field in the direction perpendicular to the travel path direction of the electron beam can be effectively improved.
As described in detail in the foregoing embodiments, the smaller the line diameter of the first magnetic shield 10, the smaller the degree of distortion of the magnetic field along the electron beam travel path at the end of the first magnetic shield 10, which is more advantageous for improving the imaging quality of the scanning electron microscope. However, the external magnetic field is generally not only present along the path of travel of the electron beam, but also in a direction perpendicular to the path of travel of the electron beam.
Fig. 10 is a graph showing the change of magnetic flux density in the direction perpendicular to the travel path of the electron beam at different diameters of the point magnetic shielding device according to the embodiment of the present application.
For example, referring to fig. 10, where f is a magnetic flux density variation curve in the horizontal direction (in the direction perpendicular to the electron beam travel path) on the electron beam travel path when the wire diameter of the first magnetic shield 10 is 0.3 mm; g is a horizontal magnetic flux density change curve on the path of travel of the electron beam when the line diameter of the first shielding member is 0.6 mm; h is a horizontal magnetic flux density change curve on the path of the electron beam travel when the line diameter of the first shielding member is 0.9 mm; i is a horizontal magnetic flux density variation curve on the path of travel of the electron beam when the line diameter of the first shield is 1.2 mm. It can be seen that the shielding effect against the horizontal magnetic field is better as the wire diameter of the first magnetic shield 10 is thicker.
Therefore, in one example of the embodiment of the present application, referring to fig. 7, the line diameter l1 of the first magnetic shield 10 is 0.3mm to 1.2mm.
Specifically, the line diameter l1 of the first magnetic shield 10 can be 0.3mm, 0.4mm, 0.5mm, 0.6mm, 0.7mm, 0.8mm, 0.9mm, 1.0mm, 1.1mm, 1.2mm, or the like.
It should be noted that, the numerical values and the numerical ranges related to the embodiments of the present application are approximate values, and may have a certain range of errors under the influence of the manufacturing process, and those errors may be considered to be negligible by those skilled in the art.
In this way, the contact area between the end of the first magnetic shield 10 and the magnetic field in the direction along the electron beam travel path can be reduced, and the shielding effect against distortion of the magnetic field in the direction along the electron beam travel path can be improved. In addition, the wall thickness of the first magnetic shield 10 in the direction perpendicular to the electron beam travel path is a wire diameter, and a larger wire diameter can improve the shielding effect against the magnetic field in the direction perpendicular to the electron beam travel path.
It can be appreciated that, in the embodiment of the present application, the first magnetic shield 10 is formed by winding magnetic shield lines, and each of the magnetic shield lines can be wound at intervals, so that the magnetic shield material required for forming the first magnetic shield 10 can be saved, and the manufacturing cost of the magnetic shield device can be saved.
However, if the gap between each turn of the magnetic shield lines is excessively large, there may be a case where the shielding effect is lowered for the magnetic field in the horizontal direction (direction perpendicular to the electron beam travel path). To ensure a shielding effect against magnetic fields in the horizontal direction. Referring to fig. 7, in an alternative design, the pitch l2 of the first magnetic shield 10 is less than or equal to 2.5mm.
In some specific examples, the pitch l2 of the first magnetic shield 10 can be 1.6mm, 2.5mm, etc. Wherein fig. 10 is a graph of the influence of a change in wire diameter between 0.3-1.2mm on a change in horizontal magnetic flux density within the magnetic shield apparatus at a pitch of the first magnetic shield 10 of 2.5mm.
In this way, the interval between each winding of the first shielding member can be reduced, and the shielding effect on the magnetic field in the direction perpendicular to the travel path of the electron beam can be improved.
Fig. 11 is a schematic structural view of yet another magnetic shielding device provided by an embodiment of the present application, fig. 12 is a front view of yet another magnetic shielding device provided by an embodiment of the present application, fig. 13 is a schematic structural view of yet another magnetic shielding device provided by an embodiment of the present application, and fig. 14 is a front view of yet another magnetic shielding device provided by an embodiment of the present application.
In general, a lens barrel of a scanning electron microscope has another structure, such as a focusing lens for focusing an electron beam. When the first magnetic shield 10 is mounted into the barrel of the scanning electron microscope, the first magnetic shield 10 needs to be retracted from other structures in the barrel to avoid interference with other structures in the barrel. For this reason, referring to fig. 11 to 14, in an alternative example of the embodiment of the present application, the first magnetic shield 10 includes a plurality of first magnetic shields 10 arranged at intervals along the travel path of the electron beam.
Specifically, referring to fig. 11 and 12, in the embodiment of the present application, the plurality of first magnetic shields 10 may be arranged at intervals in the axial direction of the first magnetic shield 10, that is, the travel path of the electron beam is the same as or identical to the axial direction of the first magnetic shield 10. Wherein the electron gun of the scanning electron microscope may be located at one end of the plurality of first magnetic shields 10 in the axial direction.
It is to be noted that, in some examples of the embodiment of the present application, the diameters of the plurality of first magnetic shields 10 may be the same (for example, as shown with reference to fig. 11 and 12). In other possible examples, the diameters of the plurality of first magnetic shields 10 may also be different (e.g., as shown with reference to fig. 13 and 14).
By providing a plurality of first magnetic shields 10, the magnetic field over the entire travel path of the electron beam can be shielded well. In addition, the plurality of first magnetic shields 10 are arranged at intervals, and the gap between two adjacent first magnetic shields 10 can avoid other component structures of the magnetic shielding device, so that the installation of each first magnetic shield 10 is facilitated.
Referring to fig. 12 and 14, in the embodiment of the present application, the spacing l3 between adjacent two first magnetic shields 10 is 8mm to 12mm.
In some specific examples, the spacing l3 between adjacent two first magnetic shields 10 can be 8mm, 9mm, 10mm, 11mm, 12mm, or the like. Note that the distance l3 between two adjacent first magnetic shields 10 may be specifically set according to the size of the structure that is to be avoided as needed. The specific size of the spacing l3 between the adjacent two first magnetic shields 10 in the foregoing example is shown as a specific example only, and is not limiting of the specific size of the spacing l3 between the adjacent two first magnetic shields 10.
In this way, on the one hand, the installation of each first magnetic shield 10 can be facilitated, and other structural components of the magnetic shield device can be avoided; in addition, it can be ensured that the distance between the adjacent two first magnetic shields 10 is not excessively large, and the magnetic field in the direction perpendicular to the path of travel of the electron beam can be shielded well.
Fig. 15 is a two-dimensional simulation effect diagram of a magnetic shielding device according to another embodiment of the present application when a magnetic field exists along the path of travel of an electron beam.
Referring to fig. 15, a two-dimensional simulation test was performed using the magnetic shielding device provided by the embodiment of the present application, in which the structure was simulated using the Comsol simulation software, the first magnetic shield 10 wound with a magnetic shielding wire had a wire diameter of 1mm and a pitch of 1.6mm, and the overall external dimensions of the first magnetic shield 10 wound with a spiral wire were identical to those of the magnetic shield sleeve in the scheme of fig. 2. The external loading magnetic field is Bx (in a first direction in a plane perpendicular to the electron beam travel path, e.g., the x-direction in fig. 15): 500nT, by (in a second direction in a plane perpendicular to the electron beam travel path, e.g., the direction perpendicular to the paper surface in fig. 15) 500nT, bz (in a direction along the electron beam travel path, e.g., the z-direction in fig. 15): 500nT. It can be seen that after the first magnetic shield 10 formed by the spiral winding is shielded, the magnetic flux density of the magnetic field is uniformly distributed in the horizontal direction (in the direction perpendicular to the electron beam travel path) inside the magnetic shield apparatus, and the magnetic field is not distorted at the break-off portions of the plurality of first magnetic shields 10. That is, with the magnetic shield structure provided by the embodiment of the present application, distortion of the magnetic field at the break of the first magnetic shield 10 can be effectively suppressed, and the influence on the electron beam in the direction along the path of the electron beam travel can be reduced/lowered, so that the imaging accuracy of the scanning electron microscope can be effectively improved.
Fig. 16 is a graph showing the effect of a change in magnetic flux density on a magnetic shielding effect in a direction along the path of travel of an electron beam in accordance with still another magnetic shielding device provided by an embodiment of the present application.
Referring to fig. 16, when the external magnetic field Bz is changed from 100nT to 1000nT (for example, the external magnetic field Bz is respectively 100nT, 200nT, 300nT, 400nT, 500nT, 600nT, 700nT, 800nT, 900nT, 1000nT, etc., the external magnetic field Bz may be in the same direction as the movement direction of the electron beam, of course, the external magnetic field Bz may be in the opposite direction to the movement direction of the electron beam), the position 6mm from the central vertical line region of the first magnetic shield 10 is observed, and it can be seen that the magnetic flux density after the internal shielding of the first magnetic shield 10 does not significantly change in the horizontal direction (i.e., in the direction perpendicular to the electron beam travel path) as the external magnetic flux density increases in the vertical direction (i.e., in the direction along the electron beam travel path); at the break of the first magnetic shield 10, the distortion of the magnetic flux density in the horizontal direction does not become serious.
In an alternative design, as shown with reference to fig. 7, the inner diameter l4 of each first magnetic shield 10 is 40mm to 60mm, and the inner diameters of any two first magnetic shields 10 are not equal (shown with reference to fig. 13 and 14). Specifically, the inner diameter l4 of the first magnetic shield 10 may be 40mm, 50mm, 60mm, or the like.
In this way, on the one hand, the first magnetic shield 10 can completely surround the electron beam within the first magnetic shield 10, and can provide a good shielding effect for the magnetic field of the outer periphery of the electron beam. On the other hand, each magnetic shield can be stably attached to other surrounding structural members, and the mounting stability of each magnetic shield can be ensured, in other words, the inner diameters of any two first magnetic shields 10 are set to be unequal, so that the structural members on the periphery of the electron beam travel path can be well avoided, and the plurality of first magnetic shields 10 can be well matched with other structural members.
In some alternative examples, to facilitate the installation of the first magnetic shield 10, the first magnetic shield 10 may be secured to a low permeability structure, such as securing the first magnetic shield 10 to an aluminum tubing or titanium alloy tubing, or the like. The first magnetic shield 10 may be fixed to an inner wall of an aluminum pipe or a titanium alloy pipe, when specifically provided. Of course, in some possible examples, the first magnetic shield 10 may also be fixed to the outer peripheral wall of an aluminum pipe or a titanium alloy pipe.
Fig. 17 is a schematic structural view of yet another magnetic shielding device according to an embodiment of the present application, and fig. 18 is a cross-sectional view of a magnetic shielding device according to an embodiment of the present application.
Referring to fig. 17 and 18, in other alternative examples of the embodiment of the present application, the magnetic shield device may further include a second magnetic shield 20; the second magnetic shield 20 is located at the outer periphery of the electron beam travel path, and the first magnetic shield 10 is located on the peripheral wall of the second magnetic shield 20.
When specifically provided, the first magnetic shield 10 may be provided on the inner peripheral wall of the second magnetic shield 20, and of course, the first magnetic shield 10 may also be provided on the outer peripheral wall of the second magnetic shield 20. Here, only the first magnetic shield 10 is shown as an example on the inner peripheral wall of the second magnetic shield 20 in fig. 17 and 18.
It should be noted that in the embodiment of the present application, the length of the first magnetic shield 10 in the axial direction may be the same as that of the second magnetic shield 20. In some possible examples, the length of the first magnetic shield 10 can also be less than the length of the second magnetic shield 20.
In this way, due to the presence of the first magnetic shield 10, the horizontal magnetic flux density of the magnetic field at the end of the first magnetic shield 10 in the direction perpendicular to the electron beam can be reduced, that is, the distortion of the magnetic field at the end of the first magnetic shield 10 can be reduced, in other words, the electron beam can be made to receive a smaller lorentz force on its travel path, thereby improving the shielding effect against the distortion of the magnetic field in the direction along the travel path of the electron beam, and improving the imaging quality of the electron beam detecting apparatus; the presence of the second magnetic shield 20 can make up for the gap between the windings of the first magnetic shield 10, and can improve the shielding effect against the magnetic field in the direction perpendicular to the path of travel of the electron beam.
In addition, the first magnetic shield 10 is sleeved on the second magnetic shield 20, and the second magnetic shield 20 can provide an installation position for the first magnetic shield 10, so that the first magnetic shield 10 can be installed conveniently.
Wherein the second magnetic shield 20 can be a magnetic shield sleeve or a screw sleeve as in the previous embodiments.
Fig. 19 is a schematic structural view of yet another magnetic shielding device according to an embodiment of the present application, and fig. 20 is a cross-sectional view of a magnetic shielding device according to an embodiment of the present application.
It will be appreciated that in order to avoid interference or disturbance of the first magnetic shield 10 with other structures within the barrel of the scanning electron microscope, the first magnetic shield 10 is provided in plurality, with the plurality of first magnetic shields 10 being disposed at intervals in the embodiment of the present application. Accordingly, referring to fig. 19 and 20, in one example of the embodiment of the present application, the second magnetic shield 20 also includes a plurality of, for example, a plurality of magnetic shield sleeves that are arranged at intervals.
Note that the pitch of the plurality of magnetic shield sleeves may be the same as or similar to the pitch between the plurality of first magnetic shields 10 in the foregoing embodiment.
Thus, the magnetic field on the whole travel path of the electron beam can be well shielded. In addition, the plurality of second magnetic shields 20 are arranged at intervals, and the gap between two adjacent second magnetic shields 20 can avoid other component structures of the magnetic shielding device, so that the installation of each second magnetic shield 20 is facilitated.
In describing embodiments of the present application, it should be noted that, unless explicitly stated or limited otherwise, the terms "mounted," "connected," and "coupled" should be construed broadly, and may be, for example, fixedly coupled, indirectly coupled through an intermediary, in communication between two elements, or in an interaction relationship between two elements. The specific meaning of the above terms in the embodiments of the present application will be understood by those of ordinary skill in the art according to specific circumstances.
The terms first, second, third, fourth and the like in the description and in the claims and in the above-described figures, if any, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order.
Claims (12)
1. A magnetic shielding device characterized by comprising at least one first magnetic shielding piece, wherein the first magnetic shielding piece is spirally wound on the periphery of an electron beam travel path and is used for shielding a magnetic field on the electron beam travel path.
2. The magnetic shield device according to claim 1, wherein the first magnetic shield is a spirally wound magnetic shield wire.
3. The magnetic shield device according to claim 1 or 2, wherein a wire diameter of the first magnetic shield is 0.3mm to 1.2mm.
4. A magnetic shielding arrangement according to any of claims 1-3, characterized in that the pitch of the first magnetic shield is less than or equal to 2.5mm.
5. The magnetic shielding device according to any one of claims 1 to 4, wherein the first magnetic shield includes a plurality of first magnetic shields arranged at intervals along a stroke path of the electron beam.
6. The magnetic shield device according to claim 5, wherein a distance between adjacent two of the first magnetic shields is 8mm to 12mm.
7. The magnetic shield device according to claim 5 or 6, wherein an inner diameter of each of the first magnetic shields is 40mm to 60mm, and inner diameters of any two of the first magnetic shields are unequal.
8. The magnetic shield device according to any one of claims 1 to 7, wherein a constituent material of the first magnetic shield is permalloy.
9. The magnetic shield device according to any one of claims 1 to 8, further comprising a second magnetic shield;
The second magnetic shield is located at an outer periphery of the electron beam travel path, and the first magnetic shield is located on a peripheral wall of the second magnetic shield.
10. The magnetic shielding device of claim 9, wherein the second magnetic shield is a magnetic shield sleeve or a screw sleeve.
11. The magnetic shielding device according to claim 9 or 10, wherein the second magnetic shield includes a plurality of magnetic shield sleeves disposed at intervals along a travel path of the electron beam.
12. An electron beam detecting apparatus comprising an electron emission source and the magnetic shielding device according to any one of claims 1 to 11;
the electron emission source is used for emitting electron beams, and the magnetic shielding device is positioned at the periphery of a travel path of the electron beams.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210130533.6A CN116631696A (en) | 2022-02-11 | 2022-02-11 | Magnetic shielding device and electron beam detection equipment |
| PCT/CN2022/130834 WO2023151327A1 (en) | 2022-02-11 | 2022-11-09 | Magnetic shielding device and electron beam detection device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210130533.6A CN116631696A (en) | 2022-02-11 | 2022-02-11 | Magnetic shielding device and electron beam detection equipment |
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| CN116631696A true CN116631696A (en) | 2023-08-22 |
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| CN202210130533.6A Pending CN116631696A (en) | 2022-02-11 | 2022-02-11 | Magnetic shielding device and electron beam detection equipment |
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| JP3406273B2 (en) * | 2000-03-28 | 2003-05-12 | 株式会社エムティアイ | Disturbance magnetic field cancellation device |
| US8633439B2 (en) * | 2011-07-01 | 2014-01-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | System and method for electromagnetic interference shielding for critical dimension-scanning electron microscope |
| CN104349653B (en) * | 2013-07-26 | 2018-02-16 | 清华大学 | Magnetic field shielding system and magnetic shielding device based on closure superconducting coil group |
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