CN116626982A - Method for manufacturing photomask, and method for manufacturing device for display apparatus - Google Patents
Method for manufacturing photomask, and method for manufacturing device for display apparatus Download PDFInfo
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- CN116626982A CN116626982A CN202310618401.2A CN202310618401A CN116626982A CN 116626982 A CN116626982 A CN 116626982A CN 202310618401 A CN202310618401 A CN 202310618401A CN 116626982 A CN116626982 A CN 116626982A
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- Prior art keywords
- film
- correction
- semi
- photomask
- transmittance
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- 238000000034 method Methods 0.000 title claims abstract description 97
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 61
- 238000012937 correction Methods 0.000 claims abstract description 168
- 230000010363 phase shift Effects 0.000 claims abstract description 102
- 238000002834 transmittance Methods 0.000 claims abstract description 85
- 230000007547 defect Effects 0.000 claims abstract description 68
- 238000012546 transfer Methods 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 238000000059 patterning Methods 0.000 claims abstract description 14
- 230000003287 optical effect Effects 0.000 claims description 27
- 239000000203 mixture Substances 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 21
- 230000000153 supplemental effect Effects 0.000 claims description 13
- 230000000704 physical effect Effects 0.000 claims description 7
- 238000009966 trimming Methods 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 18
- 239000010408 film Substances 0.000 description 394
- 239000011651 chromium Substances 0.000 description 24
- 230000015572 biosynthetic process Effects 0.000 description 23
- 238000010586 diagram Methods 0.000 description 23
- 239000007789 gas Substances 0.000 description 14
- 238000001182 laser chemical vapour deposition Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 11
- 239000002994 raw material Substances 0.000 description 11
- 229910052799 carbon Inorganic materials 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
- 229910052804 chromium Inorganic materials 0.000 description 9
- 239000010410 layer Substances 0.000 description 9
- 238000002438 flame photometric detection Methods 0.000 description 6
- 238000010030 laminating Methods 0.000 description 6
- 239000002356 single layer Substances 0.000 description 6
- 230000002950 deficient Effects 0.000 description 5
- 238000003475 lamination Methods 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 239000012788 optical film Substances 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000005068 transpiration Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- -1 gallium ions Chemical class 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000007737 ion beam deposition Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- FQNHWXHRAUXLFU-UHFFFAOYSA-N carbon monoxide;tungsten Chemical group [W].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] FQNHWXHRAUXLFU-UHFFFAOYSA-N 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910021476 group 6 element Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000002715 modification method Methods 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- GALOTNBSUVEISR-UHFFFAOYSA-N molybdenum;silicon Chemical compound [Mo]#[Si] GALOTNBSUVEISR-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Abstract
Provided are a method for manufacturing a photomask, and a method for manufacturing a device for a display device. Even if defects occur in a photomask using a phase shift effect, precise correction can be performed. A method for manufacturing a photomask having a pattern for transfer including a semi-transparent portion formed by patterning a semi-transparent film formed on a transparent substrate, the method comprising the steps of: a step of determining a defect to be corrected when the semi-transmissive portion has a defect, and determining a correction region in which a correction film for correcting the defect is formed; and a correction film forming step of forming the correction film in the correction region, wherein a 1 st film and a 2 nd film are sequentially laminated in the correction film forming step, the 1 st film having a transmittance higher than that of the semi-transmissive film, and the 2 nd film having a transmittance for adjusting the transmittance of the correction film.
Description
The present application is based on the rule of patent law, item 42, and is a divisional application of the application patent application "photomask, its correction method, manufacturing method of device for display apparatus", with application number 201910689040.4, and application number 2019, 7, 29.
Technical Field
The present invention relates to a method for manufacturing a photomask for correcting defects generated in the photomask, and more particularly, to a method for manufacturing a photomask suitable for use in manufacturing a display device, a photomask, and a method for manufacturing a device for a display device.
Background
As a photomask used in a semiconductor integrated circuit, an attenuation type (or halftone type) phase shift mask is known. The phase shift mask is formed by forming a portion corresponding to a light shielding portion of a Binary mask (Binary mask) by a halftone film (half tone film) having a low transmittance and a phase shift amount of 180 degrees.
Patent document 1 describes the following scheme: that is, when a defect is generated in the phase shift portion having such a phase shift mask, a correction member having almost the same transmittance and almost the same phase shift amount as the phase shift portion is disposed in the phase shift defect portion.
On the other hand, in manufacturing a liquid crystal display device, it is known to use a multi-tone mask (multi-tone mask) in order to improve the production efficiency. Patent document 2 describes the following method: that is, there is a multi-tone photomask including a translucent portion having a translucent film formed on a transparent substrate, in addition to a light shielding portion and a light transmitting portion, and a correction film is formed on a defect generated in the translucent portion to correct the defect. Thus, the phase difference between the light transmitting portion exposed from the transparent substrate and the correction portion formed with the correction film on the transparent substrate is 80 degrees or less. Thus, at the boundary between the adjacent light transmitting portion and the correction portion, a defect such as a short circuit of the thin film transistor channel due to a decrease in transmittance caused by a phase difference can be suppressed.
Further, patent document 3 proposes a photomask using a phase shift film having a high transmittance (30% or more) in the manufacture of a display device.
Prior art literature
Patent literature:
patent document 1: japanese patent laid-open No. 7-146544
Patent document 2: japanese patent laid-open No. 2010-198006
Patent document 3: japanese patent laid-open publication 2016-71059
Disclosure of Invention
Problems to be solved by the invention
For example, when a defect occurs in a pattern portion formed of a halftone film, which is provided in a halftone phase shift mask, it is not necessarily easy to correct the defect. In general, when a defect is generated in a photomask, it is known that a FIB (focused ion beam) device is used as a correction means when the defect is to be corrected by a correction film.
Although the FIB device mainly uses gallium ions to deposit a carbon-based film, the inventors have studied that, in a method of simply depositing a correction film on a defective portion of a photomask using the FIB device, the same function as a photomask in which no defect is generated may not be recovered. If the photomask to be corrected is a so-called binary mask, the correction operation is easier. On the other hand, as a result of the study by the present inventors, it was found that, when the correction target is a halftone phase shift mask, even if the FIB device is used, a correction film is deposited on a defective portion of the photomask, the phase shift amount with respect to exposure light is about 180 degrees, and it is not easy to form a correction film having a desired transmittance set for a halftone film in a normal portion. This also relates to the FIB device designed for correction of the light shielding film, and does not contemplate the case where the phase shift amount and the transmittance are individually adjusted to desired values. That is, there are the following problems: in order to study the possibility of applying the FIB device to the correction of the phase shift mask, it is necessary to start from the search for the raw material and the formation condition of the correction film, and even based on the results of these efforts, it is not necessarily possible to realize optical properties such as transmittance that are different depending on the phase shift mask.
Although the defect correction by the FIB device is advantageous in depositing a correction film for a minute defect, the laser CVD method described later is more advantageous in terms of efficiency of rapidly and uniformly covering a region to be corrected with the correction film. Therefore, in general, laser CVD is more advantageous than FIB devices in correcting a photomask for manufacturing a large-sized display device (hereinafter, referred to as "FPD").
In patent document 2, a laser CVD method is used for defect correction of a semi-transparent film forming a semi-transparent portion. In this way, the correction film can be deposited relatively efficiently on the defective portion, and the correction film can be applied more easily to a large-sized photomask for an FPD. However, the correction film formed in this manner is a correction film for a semi-transmissive film having no phase shift effect.
Currently, in a display device, with an increase in pixel density, a trend of high definition is remarkable. In addition, in the portable terminal, particularly, brightness and power saving performance are required. In order to achieve these, the photomask used in the manufacturing process also includes minute portions, and a technique for reliably distinguishing these minute portions is required. The trend of resolution improvement is not necessarily limited to exposure apparatuses, and it is conceivable that a photomask is also expected to have a technique for improving resolution. Thus, patent document 3 proposes a transfer pattern using a phase shift function also in a photomask for an FPD.
However, there are significant difficulties associated with obtaining a correction film having the same transmittance and phase shift amount as a semi-transparent film (hereinafter, also referred to as "normal semi-transparent film") that was first formed in a photomask manufacturing process, with respect to defects that occur in a semi-transparent film having a phase shift effect. In particular, a method for forming a correction film for a semi-transmissive portion having a high transmittance (for example, 25% or more) and a phase shift effect has not been established.
The main object of the present invention is to provide a technique capable of performing precise correction even if defects occur in a photomask using a phase shift effect.
Means for solving the problems
(aspect 1)
In the method for manufacturing a photomask according to claim 1 of the present invention, the photomask has a pattern for transfer including a semi-transmissive portion formed by patterning a semi-transmissive film formed on a transparent substrate,
the method for manufacturing the photomask comprises the following steps:
in the case where a defect is generated in the semi-light transmitting portion,
determining the defect to be corrected, and determining a correction region in which a correction film for correcting the defect is formed; and
a correction film forming step of forming the correction film in the correction region,
In the correction film forming step, a 1 st film and a 2 nd film are laminated in this order,
the 1 st film has a higher transmittance than the semi-transmissive film,
the 2 nd film has a transmittance for adjusting the transmittance of the correction film.
(aspect 2)
The feature of the 2 nd aspect of the present invention is that,
the transfer pattern further includes a light shielding portion having an OD of 3 or more, which is an optical density of exposure light.
(aspect 3)
The method for producing a photomask according to claim 3 of the present invention, wherein,
in the step of determining the correction region, the correction region is determined as a region in which an edge of the correction film is separated from an edge of the light shielding portion.
(aspect 4)
A feature of the 4 th aspect of the present invention is that,
the method for manufacturing a photomask according to claim 3, further comprising: and forming a supplemental film composed of a material having a composition different from that of the light shielding film so as to cover at least an edge of the correction film and an edge of the light shielding portion, thereby trimming a shape of the correction semi-transparent portion.
(aspect 5)
A feature of the 5 th aspect of the present invention is that,
the method for manufacturing a photomask according to any of the above aspect 2, wherein the semi-transmissive portion is arranged so as to be sandwiched by the light shielding portions.
(aspect 6)
The invention of the 6 th aspect is characterized in that,
the method for producing a photomask according to any of the above 1 or 2, wherein,
when the transmittance of the 1 st film to a representative wavelength of exposure light using light having a wavelength of 300nm to 500nm is T1, the phase shift amount is Φ1, the transmittance of the 2 nd film to the representative wavelength is T2, and the phase shift amount is Φ2, the following relationships (1) to (5) are satisfied:
(1) Phi 1 is less than or equal to 100 degrees and less than 200 degrees
(2) Phi 2 is more than or equal to 20 degrees and less than 100 degrees
(3) T1＞T2
(4) 55％≤T1≤95％
(5) 25％<T2<80％。
(aspect 7)
The 7 th aspect of the present invention is characterized in that,
the method for producing a photomask according to any of the above 1 or 2, wherein the composition or physical properties of the 1 st film and the 2 nd film are different from each other.
(aspect 8)
The 8 th aspect of the present invention is characterized in that,
the method for producing a photomask according to any of the above 1 or 2, wherein,
the transmittance Tm of the semi-transmissive portion for the light of the representative wavelength is 25% < Tm.ltoreq.80%.
(aspect 9)
The 9 th aspect of the present invention is characterized in that,
the method for manufacturing a photomask according to claim 1 or 2, wherein the semi-transmissive portion has a phase shift amount phim of 160 DEG to phim to 200 DEG with respect to the light of the representative wavelength.
(aspect 10)
A feature of the 10 th aspect of the present invention is that,
a photomask having a pattern for transfer, the pattern for transfer including a semi-transparent portion formed by patterning a semi-transparent film formed on a transparent substrate, wherein,
the photomask includes a correction semi-transparent portion locally formed with a correction film containing a material different from that of the semi-transparent film,
the correction film has a laminated film in which a 1 st film and a 2 nd film are laminated in this order,
the 1 st film has a higher transmittance than the semi-transmissive film,
the 2 nd film has a transmittance for adjusting the transmittance of the correction film.
(11 th aspect)
The 11 th aspect of the present invention is characterized in that,
the photomask according to claim 10, wherein,
the transfer pattern further includes a light shielding portion having an OD of 3 or more, which is an optical density of exposure light.
(12 th aspect)
The 12 th aspect of the present invention is characterized in that,
the photomask according to claim 11, wherein the edge of the modified semi-transparent portion is separated from the edge of the light shielding portion.
(aspect 13)
The 13 th aspect of the present invention is characterized in that,
the photomask according to the above 12, wherein,
A supplemental film is formed so as to cover at least the edge of the correction semi-transparent portion and the edge of the light shielding portion, the supplemental film being composed of a material having a composition different from that of the light shielding film.
(14 th aspect)
The 14 th aspect of the present invention is characterized in that,
the photomask according to claim 11, wherein,
the semi-transmissive portion is disposed so as to be sandwiched by the light shielding portions.
(15 th aspect)
A method for manufacturing a photomask according to claim 15 of the present invention is the photomask according to claim 10 or 11, wherein when the transmittance of the 1 st film for a representative wavelength of exposure light using light having a wavelength of 300nm to 500nm is T1, the phase shift amount is Φ1, the transmittance of the 2 nd film for the representative wavelength is T2, and the phase shift amount is Φ2, the following relationships (1) to (5) are satisfied:
(1) Phi 1 is less than or equal to 100 degrees and less than 200 degrees
(2) Phi 2 is more than or equal to 20 degrees and less than 100 degrees
(3) T1＞T2
(4) 55％≤T1≤95％
(5) 25％<T2<80％。
(aspect 16)
The photomask according to claim 16 of the present invention has a pattern for transfer, and the photomask according to claim 10 or 11, wherein the composition or physical properties of the 1 st film and the 2 nd film are different from each other.
(17 th aspect)
The 17 th aspect of the present invention is characterized in that,
according to the photomask of claim 16,
the transmittance Tm of the semi-transmissive portion for the light of the representative wavelength is 25% < Tm.ltoreq.80%.
(18 th aspect)
The 18 th aspect of the present invention is characterized in that,
the photomask according to claim 10 or 11, wherein,
the phase shift amount phi m of the semi-transparent part for the light with the representative wavelength is 160 degrees less than or equal to phi m less than or equal to 200 degrees.
(aspect 19)
A 19 th aspect of the present invention is characterized in that,
a method for manufacturing a device for a display device, wherein,
the manufacturing method of the device for the display device comprises the following steps:
preparing the photomask according to claim 10 or 11; and
and a transfer step of exposing the photomask with an exposure device and transferring the transfer pattern to a transfer object.
Effects of the invention
According to the present invention, even if defects occur in a photomask using a phase shift effect, precise correction can be performed.
Drawings
Fig. 1 is an explanatory diagram schematically showing an outline of a photomask correction method in embodiment 1 of the present invention, (a) is a diagram showing an example of a normal pattern, (b) is a diagram showing an example of a white defect, (c) is a diagram showing an example of a 1 st film formation, and (d) is a diagram showing an example of a 2 nd film formation.
Fig. 2 is an explanatory diagram schematically showing an outline of the photomask correction method in embodiment 2 of the present invention, (a) is a diagram showing an example of a normal pattern, (b) is a diagram showing an example of a white defect, (c) is a diagram showing an example of film removal around the defect, (d) is a diagram showing an example of film formation 1, (e) is a diagram showing an example of film formation 2, and (f) is a diagram showing an example of light-shielding supplemental film formation.
Fig. 3 is an explanatory diagram schematically showing an outline of the photomask correction method in embodiment 3 of the present invention, (a) is a diagram showing an example of a normal pattern, (b) is a diagram showing an example of a white defect, (c) is a diagram showing an example of film removal around the defect, (d) is a diagram showing an example of film formation 1, (e) is a diagram showing an example of film formation 2, and (f) is a diagram showing an example of light-shielding supplemental film formation.
Fig. 4 is an explanatory diagram illustrating optical characteristics of a correction film formed by the photomask correction method of the present invention, (a) is a diagram showing one specific example of a relationship between a phase shift amount and a transmittance in the case where the 1 st film as a phase shift control film is a single layer, (b) is a diagram showing one specific example of a relationship between a phase difference and a transmittance in the case where the 2 nd film as a transmission control film is a single layer, and (c) is a diagram showing one specific example of a relationship between a phase shift amount and a transmittance of a correction film (laminated film) obtained by laminating the 1 st film and the 2 nd film.
Description of the reference numerals:
1 … transparent substrate
2 … semi-transparent film
3 … shading film
4 … correction film
4a … film 1
4b … film 2
5 … supplement film
10 10' … transfer Pattern
11 … light-transmitting portion
12 … semi-transparent part
12a … modified semi-transparent portion
13 … shading part
20 … white defect
21 22, … correction area
Detailed Description
Embodiments of a photomask correction method, a photomask manufacturing method, a photomask, and a display device manufacturing method according to the present invention will be described below.
The photomask correction method according to the present invention can be applied when a defect occurs in a transfer pattern formed on a transparent substrate.
Photomask as object of defect correction
Here, a photomask to which the photomask correction method of the present invention is applied will be described.
As a photomask to which the photomask correction method of the present invention is applied, there is a transfer pattern formed by patterning one or a plurality of optical films, respectively, formed on a transparent substrate. At least one of the optical films is a semi-transmissive film having a predetermined transmittance and a phase shift function for exposure light. The semi-transmissive film is a film for shifting the phase of transmitted exposure light by a desired amount.
That is, the photomask blank (or the photomask intermediate) having at least the above-described semi-transparent film formed on the transparent substrate may be prepared, and the photomask of the pattern for transfer may be formed by a photolithography process.
Examples of the transfer pattern include a transfer pattern including a translucent portion and a translucent portion formed by patterning a translucent film formed on a transparent substrate, and a transfer pattern including a translucent portion, a light shielding portion, and a translucent portion formed by patterning a translucent film and a light shielding film formed on a transparent substrate, respectively.
The present invention can be advantageously applied when the photomask is a photomask for an FPD.
Unlike photomasks for manufacturing semiconductor devices, photomasks for FPDs are generally large in size (for example, a quadrangle having one side of a main surface of about 200 to 2000mm and a thickness of about 5 to 20 mm), have a weight, and are also various in size.
The transparent substrate is not particularly limited as long as it has sufficient transparency for an exposure wavelength used for exposure of the photomask. For example, quartz or other various glass substrates (soda lime glass, aluminosilicate glass, etc.) can be used, but quartz substrates are particularly preferred.
The following optical characteristics are exemplified as the optical characteristics of the semi-transmissive film constituting the semi-transmissive portion.
The object of the photomask correction method of the present application is a semi-transparent portion having a transmittance Tm (%) for light of a representative wavelength of exposure light. The effect of the application is particularly remarkable when 25 < Tm is satisfied. For example, 25 < Tm.ltoreq.80.
In the present specification, the transmittance is a transmittance when the transmittance of the transparent substrate is set to 100%.
Here, the exposure light may use light mainly having a wavelength of 300 to 500nm as a light source of an exposure device of the FPD photomask. For example, a light source having a wavelength range including one or more of an i-line, an h-line, and a g-line is preferably used, and a high-pressure mercury lamp including these wavelengths is particularly often used.
In this case, the representative wavelength of the exposure light may be any wavelength included in the wavelength range of i-line to g-line. For example, the h-line (405 nm) near the central value of these wavelength ranges can be set as the representative wavelength. In the following description, unless otherwise specified, the h-line is described as a representative wavelength. Of course, a wavelength range (for example, 300 to 365 nm) on the wavelength side shorter than the above wavelength may be used as the exposure light.
The phase shift amount phim of the semi-transmissive film may be set to about 180 degrees with respect to the light of the representative wavelength. Here, about 180 degrees means a range of 160 to 200 degrees. More preferably, the exposure light has a phase shift amount of 160 to 200 degrees for all the main wavelengths (for example, i line, h line, g line) included therein.
The shift in the phase shift amount in the wavelength range from i line to g line is preferably 40 degrees or less.
Further, a photomask having a semi-transmissive portion having the transmittance Tm and the phase shift amount Φm can improve the resolution of the pattern for transfer as compared with a so-called binary mask. For example, a photomask as described below is known: that is, the light transmitting portion is disposed adjacent to the semi-light transmitting portion, and the resolution is improved by diffraction and interference caused by each transmitted light generated at the boundary. In such a so-called phase shift mask, the main stream is to set the transmittance of the semi-transparent portion to 10% or less.
On the other hand, the transfer pattern may have a light shielding portion in addition to the light transmitting portion and the semi-light transmitting portion. That is, a photomask having a transfer pattern formed by patterning a semi-transparent film and a light shielding film formed on a transparent substrate, respectively, may be the object of the photomask correction method of the present invention.
For example, as in the photomask described in patent document 3, when the light transmitting portion and the semi-transmitting portion are not adjacent to each other and the light shielding portion is disposed between the light transmitting portion and the semi-transmitting portion, and when the semi-transmitting portion is sandwiched between the interposed light shielding portions, the following advantage can be obtained by using the light transmitted through the semi-transmitting portion and having a phase in an inverse relation with the light transmitting portion: that is, the depth of focus is increased (increased), and on the basis of this, the MEEF (mask error increase factor), the Dose amount of light energy required for exposure, and the like are reduced.
In this way, a transfer pattern may be designed as follows: that is, the semi-transmissive portion having a phase shift function is disposed at a predetermined position in the vicinity via the light shielding portion or the semi-transmissive portion having substantially no phase shift function, without being directly adjacent to the light transmitting portion. In this case, it is useful to design the transmittance Tm of the semi-transmissive portion having a phase shift function to be relatively high (e.g., tm > 25) with respect to the transmittance (e.g., 10% or less) of a general halftone phase shift mask, and this has a significant effect on the improvement of resolution performance. In the case of such a high-transmittance phase shift semi-transparent portion, the transmittance Tm is more preferably in the range of 30 < Tm.ltoreq.75, and still more preferably 40 < Tm.ltoreq.70. In this case, the transmitted light of the translucent portion can be appropriately interfered with the transmitted light of the translucent portion separated from the translucent portion by a predetermined distance, and the light intensity distribution (profile) of the transmitted light formed in the translucent portion can be improved.
Thus, when defects are generated in the semi-light transmitting portion having high transmittance and a phase shift effect, the defects must be corrected.
In order to correct the related defects, the photomask correction method of the present invention is applied.
Embodiment 1 of the photomask modification method
Hereinafter, embodiment 1 of a photomask correcting method according to the present invention will be described with reference to fig. 1.
Fig. 1 (a) shows a normal pattern portion of the photomask to be corrected in embodiment 1. In embodiment 1, the transfer pattern 10 to be corrected includes a light transmitting portion 11 where the transparent substrate 1 is exposed, and a semi-transparent portion 12 where the semi-transparent film 2 having a phase shift function is formed on the transparent substrate 1.
First, in the step of determining a defect, a defect generated in the semi-transparent film 2 is determined, and the defect is set as a correction target. For a white defect that is formed by the lack of the semi-transmissive film 2, a correction region in which a correction film 4 to be described later is formed is determined. The step (pretreatment step) of removing unnecessary film (residual semi-transparent film 2) or foreign matter around the defective portion or defective position may be performed as needed, and after the shape of the correction region where the correction film 4 is formed is trimmed, the correction film 4 may be formed. The removal of the unnecessary residual film 2 can be performed using Laser-based transpiration (Laser bombardment) or the like.
On the other hand, when the correction of the present invention is performed for the semi-transparent portion 12 having the remaining defect, such as the semi-transparent portion 12 having the black defect, that is, the adhesion of the foreign matter, or the residual of the light shielding film to be removed by the patterning step, the residual is removed in the same manner as described above, and the correction film 4 of the present invention may be formed in a state where the transparent substrate 1 is exposed.
Fig. 1 (a) shows a transfer pattern 10 formed by patterning a semi-transmissive film 2 having a phase shift function formed on a transparent substrate 1. The semi-transparent portion 12 has a transmittance Tm (%), tm > 25 for light of a representative wavelength (here, h line) of exposure light. Specifically, as described above, for example, 25 < Tm.ltoreq.80 may be set. The semi-transmissive section 12 has a phase shift amount phim with respect to the light of the representative wavelength. Here, φm is set to 160.ltoreq.φm.ltoreq.200 (degrees).
Fig. 1 (b) shows a case where a white defect is generated in the semi-transmissive portion 12. The white defect may be a white defect formed by the lack of the semipermeable membrane 2 which should be present, or may be an artificial white defect formed by the removal of the remainder of the semipermeable portion 12 having the remaining defect. As will be described in detail later as a correction film forming step, the white defect portion 20 is corrected by forming the correction film 4. The formation method of the correction film 4 may preferably use a laser CVD method.
Laser lightThe CVD method is a method of forming a film (also referred to as a laser CVD film) by introducing a film raw material and applying heat and/or light energy generated by laser irradiation. As a film raw material, cr (CO) which is a group 6 element of metal carbonyl can be used 6 (chromium hexacarbonyl), mo (CO) 6 (molybdenum hexacarbonyl), W (CO) 6 (tungsten hexacarbonyl) and the like. Wherein when Cr (CO) is used 6 When the film material is used as a photomask correction film material, it is preferable because it is excellent in chemical resistance against cleaning and the like. In embodiment 1, cr (CO) 6 The case of using the film as a raw material will be described.
As the laser to be irradiated, a laser in an ultraviolet region is preferably used. A source gas is introduced into the laser irradiation region, and a film is deposited by the action of photo CVD and/or thermal CVD. For example, nd YAG laser light with a wavelength of 355nm or the like can be used. As the carrier gas, ar (argon) may be used, but N (nitrogen) may be contained.
In a general laser CVD apparatus, it is assumed that a correction film having light shielding properties is formed by laser CVD. However, in the present invention, the semi-light-transmitting correction film 4 having a phase shift function is formed. For this purpose, conditions such as the flow rate and energy power of the introduced gas are selected.
As shown in fig. 1 (d), the correction film 4 of the present invention has a laminated structure of a 1 st film 4a and a 2 nd film 4 b. The lamination order may be one in which any one is located above, and it is not excluded that an additional film is provided within a range that does not interfere with the operation and effect of the present invention. In the following description, the correction film 4 having desired optical performance is formed by laminating the 2 nd film 4b on the 1 st film 4 a.
(film 1)
Fig. 1 (c) shows a step of forming the 1 st film 4 a.
In order to make the correction film 4 formed by stacking the 1 st film 4a and the 2 nd film 4b stacked thereon have a phase shift amount Φr (degrees) of about 180 degrees for light of a representative wavelength of exposure light, the 1 st film 4a is made to have an appropriate phase shift amount Φ1 (degrees). The 1 st film 4a is preferably responsible for 50% or more of the above-mentioned phase shift amount Φr, that is, functions as a so-called "phase shift control film".
That is, the phase shift amount φ 1 of the 1 st film 4a and the phase shift amount φr of the correction film 4 may be set to 160.ltoreq.φrε.ltoreq.200, and 100.ltoreq.φ1 < 200.
The phase shift amount φ 1 is more preferably 120.ltoreq.φ1 < 180, still more preferably 130.ltoreq.φ1 < 160.
The transmittance T1 of the 1 st film 4a for the light of the representative wavelength is preferably 55T 1 or less, more specifically 55T 1 or less 95, still more preferably 60T 1 or less 80, and still more preferably 60T 1 or less 70.
In addition, for example, 160. Ltoreq.φr.ltoreq.200 means a range including 160+360 M.ltoreq.φr.ltoreq.200+360M (M is a non-negative integer). Hereinafter, the same meaning applies to the phase shift amount.
Preferably, the main components of the 1 st film 4a are Cr (chromium) and O (oxygen). That is, the total of Cr and O is 80% or more of the entire composition of the 1 st film 4 a. The total content of Cr and O is more preferably 90% or more, and still more preferably 95% or more.
The content% of the film component represents atomic%. The same applies to the following.
The 1 st film 4a may not contain C (carbon) contained in the raw material gas, but in the case of containing C (carbon), it is preferably 20% or less, more preferably 10% or less. The C content of the 1 st film 4a is smaller than that of the 2 nd film 4b described later, and is preferably 2/3 or less, more preferably 1/3 or less of that of the 2 nd film 4b.
It is preferable that the maximum component (having the maximum content) of the 1 st film 4a is O, and the content of O is 50% or more.
The composition of the 1 st film 4a preferably contains 5 to 45% of Cr and 55 to 95% of O.
The Cr content of the 1 st film 4a is preferably 5 to 30%.
The 1 st film 4a more preferably contains 20 to 30% of Cr and 70 to 80% of O.
The content of Cr in the 1 st film 4a is preferably smaller than that in the 2 nd film 4b described later.
By adopting such a composition as described above, the 1 st film 4a can thus employ a film having high transmittance and having a sufficient phase shift amount. Further, the 1 st film 4a can be formed by laser CVD.
In order to form the 1 st film 4a according to the above composition and achieve the above optical characteristics, the 1 st film 4a has a film thickness ofMore preferably +.>
Fig. 4 (a) illustrates the optical characteristics of the 1 st film 4a.
Fig. 4 (a) shows a specific example of the relationship between the phase shift amount Φ1 and the transmittance in the case where the 1 st film 4a as the phase shift control film is a single layer, assuming that the vertical axis is the phase shift amount (degree) and the horizontal axis is the transmittance (%).
(2 nd film)
Fig. 1 (d) shows a step of forming the 2 nd film 4b on the 1 st film 4 a.
The 2 nd film 4b has a transmittance T2 (%) required for adjustment so that the transmittance Tr (%) of the correction film 4 formed by lamination with the 1 st film 4a becomes a desired value. That is, the 2 nd film 4b can be referred to as a "transmission control film".
It is preferable that the transmittance T1 of the 1 st film 4a and the transmittance T2 of the 2 nd film 4b be T1 > T2.
The 2 nd film 4b has a transmittance T2 of preferably 25 < T2 < 80, more preferably 30.ltoreq.T2 < 70, still more preferably 45.ltoreq.T2 < 65.
Further, the phase shift amount phi 2 of the 2 nd film 4b is smaller than the phase shift amount phi 1 of the 1 st film 4a, and phi 2 < 100. Specifically, phi 2 is more than or equal to 20 and less than or equal to 100, more preferably phi 2 is more than or equal to 20 and less than or equal to 60, and still more preferably phi 2 is more than or equal to 30 and less than or equal to 50.
The main components of the 2 nd film 4b are preferably Cr, O, and C. That is, cr, O, and C constitute preferably 90% or more, more preferably 95% or more of the total components of the 2 nd film 4 b.
Preferably, the 2 nd film 4b contains more C than the 1 st film 4 a.
The Cr content of the 2 nd film 4b is preferably set to be larger than the Cr content of the 1 st film 4 a.
Specifically, the composition of the 2 nd film 4b may be set to contain 20 to 70% of Cr,5 to 45% of O, and 10 to 60% of C.
More preferably, the composition of the 2 nd film 4b may be 40 to 50% Cr,15 to 25% O, and 25 to 35% C.
When the 1 st film 4a and the 2 nd film 4b are formed by the laser CVD method, raw material gases having different components or component ratios may be used, or the same raw material gases may be used while using different forming conditions, thereby obtaining different compositions and physical properties.
In embodiment 1, the source gases of the 1 st film 4a and the 2 nd film 4b are the same (Cr (CO) 6), but different formation conditions are applied.
That is, in the formation of the 1 st film 4a, the flow rate of the source gas may be set smaller (for example, 1/2 or less, and further, 1/8 to 1/6 or the like) than that of the 2 nd film 4b, and the irradiation power density of the laser light may be set smaller (for example, 1/2 or less) than that of the 2 nd film 4 b. These are effective methods for limiting the decomposition reaction of the raw material gas to form the 1 st film 4a having a sufficient phase shift amount while the transmittance is not excessively small.
For example, the flow rate of the raw material gas may be 30 cc/min or less, preferably 10 to 20 cc/min, and the laser irradiation power density may be 3mW/cm 2 Hereinafter, it is preferably 1 to 2mW/cm 2 . The laser irradiation time may be 10 seconds or more, and is preferably 20 to 30 seconds. That is, the flow rate of the source gas and the laser irradiation power density for forming the 1 st film 4a are set to a relatively low flow rate and a relatively low energy, and it is useful to apply a film formation for a longer period of time than the 2 nd film 4b described later.
On the other hand, in the case of forming the 2 nd film 4b, the flow rate of the raw material gas is increased and the content of C is increased as compared with the case of the 1 st film 4 a. Further, the laser irradiation power density for forming the 2 nd film 4b is preferably also higher than that in the 1 st film 4 a. Thus, even if the decomposition reaction of the source gas is promoted and the film thickness is reduced, the 2 nd film 4b having a smaller transmittance than the 1 st film 4a is formed.
For example, the flow rate of the raw material gas for forming the 2 nd film 4b is 60 cc/min or more, preferably 80 to 110 cc/minAbout, the laser irradiation power density was set to 6mW/cm 2 The above is preferably 8 to 12mW/cm 2 . The laser irradiation time may be shorter than in the case of the 1 st film 4a, for example, 1.0 seconds or less, and preferably 0.5 to 0.8 seconds. That is, as the flow rate of the source gas and the laser irradiation power density for forming the 2 nd film 4b, a condition of relatively high flow rate, relatively high energy, and a short time can be adopted.
The formation condition of the 2 nd film 4b may be referred to as a so-called high energy condition that is larger than that applied to a correction film (for example, correction of a binary mask) that uses laser CVD to form a light shielding property.
By applying such conditions, the 2 nd film 4b is a thin film, and the phase shift amount Φ2 is extremely small, and also, since the film density is high, it becomes a film excellent in chemical resistance.
With the above composition, the film thickness of the 2 nd film 4b can be set asMore preferably +.>The film thickness of the 2 nd film 4b is preferably smaller than that of the 1 st film, and the phase shift amount is reduced, so that the phase shift amount as the correction film can be easily adjusted.
Fig. 4 (b) illustrates the optical characteristics of the 2 nd film 4 b.
Fig. 4 (b) shows a specific example of the relationship between the phase shift amount Φ2 and the transmittance T2 in the case where the vertical axis is the phase shift amount (degree), the horizontal axis is the transmittance (%) and the 2 nd film 4b as the transmission control film is a single layer.
(laminate film)
By stacking the 1 st film 4a and the 2 nd film 4b, the correction film 4 having the following phase shift amount Φr (degree) and transmittance Tr (%) with respect to the light of the representative wavelength can be formed. That is, the correction film 4 obtained by laminating the 1 st film 4a and the 2 nd film 4b may be set as
160≤φr≤200
Tr＞25。
The transmittance Tr of the correction film 4 may preferably be in the same range as the transmittance Tm of the semi-transmissive portion, that is, 30 < tr.ltoreq.75, more preferably 40 < tr.ltoreq.70.
The lamination order of the 1 st film 4a and the 2 nd film 4b may be arbitrary. However, since the chemical resistance of the 2 nd film 4b is higher than that of the 1 st film 4a due to the difference in the above-described composition, the 2 nd film 4b is preferably disposed on the upper layer side, whereby the cleaning resistance and the like can be improved.
As the correction film 4 including the 1 st film 4a and the 2 nd film 4b, the cr—c—o composition ratio may be set to Cr: 30-70%, O: 5-35%, C:20 to 60, more preferably Cr: 40-50%, O: 5-25%, C: 35-45%.
Fig. 4 (c) illustrates optical characteristics of the correction film 4 obtained by laminating the 1 st film 4a and the 2 nd film 4 b.
Fig. 4 (c) shows a specific example of the relationship between the phase shift amount and the transmittance of the correction film 4 obtained by stacking the 1 st film 4a and the 2 nd film 4b, in which the vertical axis is the phase shift amount (degree), and the horizontal axis is the transmittance (%). As is clear from fig. 4, the correction film 4 obtained by laminating the 1 st film 4a and the 2 nd film 4b has an optical characteristic having a high transmittance for exposure light and a phase shift function, which is not obtained in any of the case where the 1 st film 4a is a single layer (see fig. 4 (a)) and the case where the 2 nd film 4b is a single layer (see fig. 4 (b)).
That is, by applying the photomask correction method in the above-described process, even if a defect occurs in the semi-transmissive film 2 having a predetermined transmittance and having a phase shift function, precise correction for recovering the optical characteristics can be performed. More specifically, according to the photomask correction method of embodiment 1, correction can be performed so that the optical properties of the correction film 4 are substantially the same as those of the high-transmittance phase shift film, which is difficult to achieve, by using a 2-layer structure. Here, since the 1 st film 4a and the 2 nd film 4b can be formed by the same film forming method (here, the laser CVD method), a plurality of correction apparatuses are not required. This is very advantageous in, for example, correction of a display device manufacturing photomask described later.
In embodiment 1 shown in fig. 1, the translucent portion 12 is adjacent to the light-transmitting portion 11. In such a transfer pattern, after the correction film 4 having a desired area or more is formed by the above-described process, the edge shape of the correction film 4 at the boundary with the light transmitting portion 11 can be trimmed by removing the vicinity of the outer edge of the correction film 4. The means for this may be, for example, laser bombardment (Laser Zap). In this way, even when the side surface is inclined during the formation of the correction film 4, the edge shape of the film closer to the side surface perpendicular to the transparent substrate 1 or the like can be trimmed, and the phase shift effect generated at the boundary portion can be more favorably exerted.
Embodiment 2 of the photomask correction method
Next, embodiment 2 of a photomask correcting method according to the present invention will be described with reference to fig. 2.
Fig. 2 shows a method for correcting defects in a photomask having a transfer pattern 10' formed by patterning a translucent film 2 and a light shielding film 3 on a transparent substrate 1.
That is, in embodiment 2, the transfer pattern 10' to be corrected includes a light transmitting portion where the transparent substrate 1 is exposed, a light shielding portion 13 where at least the light shielding film 3 is formed on the transparent substrate 1, and a semi-transmitting portion 12 where the semi-transmitting film 2 having a phase shift function is formed on the transparent substrate 1. Fig. 2 (a) shows only the light shielding portion 13 and the semi-transmissive portion 12, and the light transmitting portion is omitted. An antireflection layer may be formed on the surface layer of the light shielding film 3.
In embodiment 2, the translucent portion 12 is adjacent to the light shielding portion 13, and is disposed so as to sandwich the translucent portion 12 and the light shielding portion 13 in the direction in which they are aligned. In fig. 2 (a), the semi-transmissive portion 12 is not adjacent to the light-transmissive portion.
Here, the semi-transmissive portion 12 is constituted by a phase shift film having the same transmittance Tm (%) and the same phase shift amount Φm (degree) as those in the case of embodiment 1 described above. The light shielding portion 13 is a film that does not substantially transmit exposure light, and is preferably OD (Optical Density) 3 or more.
Fig. 2 (b) shows a case where a white defect 20 is generated in the semi-light transmitting portion 12 of the photomask shown in fig. 2 (a).
Fig. 2 c shows a step (pretreatment step) of removing the semi-transmissive film 2 and the light shielding film 3 located around the white defect 20 to expose the transparent substrate 1 and trimming the shape of a region (hereinafter, also referred to as a correction region) 21 for forming the correction film 4. The film removal method may be a Laser-based transpiration (Laser Zap) method.
Fig. 2 (d) shows a step of forming the 1 st film 4a on the surface of the transparent substrate 1 exposed in the correction region 21, as in the case of embodiment 1. Fig. 2 (e) shows that the 2 nd film 4b is laminated on the 1 st film 4a formed.
The optical properties, composition and film formation conditions of the 1 st film 4a and the 2 nd film 4b can be the same as those of embodiment 1. Therefore, the correction film 4 having the two-layer structure is also formed in the same manner as in embodiment 1.
In embodiment 2, the correction area 21 is adjacent to the light shielding portion 13 or the translucent portion 12. Further, here, an example is shown in which the correction area 21 is surrounded by the light shielding portion 13 and/or the semi-light transmitting portion 12. Here, the correction film is formed so that the edge of the semi-transmissive film 2 and/or the light shielding film 3 forming the outer edge of the correction region 21 and the edge of the 1 st film 4a or the 2 nd film 4b do not overlap with each other. This is because if the 1 st film 4a and/or the 2 nd film 4b overlaps the edges of the remaining semi-transmissive film 2, the transmittance of the overlapping portion is lower than that of the normal semi-transmissive film 2, and there is a problem that the pattern is not transferred as designed.
Further, this is because, when the 1 st film 4a and/or the 2 nd film 4b overlap with the edge of the remaining light shielding portion 13, energy is irradiated to the component (e.g., cr) of the light shielding film 3 at the edge portion of the light shielding film 3, so that unnecessary film growth starts, and the transmittance of the nearby semi-transmissive portion (including the corrected) 12 is changed.
Therefore, it is preferable to perform a correction step of adjusting the edge position so that the edges of the 1 st film 4a and/or the 2 nd film 4b do not overlap with the edges of the semi-transmissive film 2 and the light shielding film 3 remaining on the transparent substrate 1. Alternatively, as shown in fig. 2 (c) and (d), it is preferable to apply a correction step in which the edges of the 1 st film 4a and/or the 2 nd film 4b are slightly separated from the edges of the semi-transmissive film 2 and the light shielding film 3 remaining on the transparent substrate 1.
The distance between the edge of the 1 st film 4a and/or the 2 nd film 4b and the edges of the semi-transmissive film 2 and the light shielding film 3 is preferably 1 μm or less. For example, the separation distance may be set to 0.1 μm to 1 μm. Since the separation distance is smaller than the resolution limit of the exposure device that exposes the photomask, the separation portion is not substantially transferred to the transferred body.
In embodiment 2, in the pretreatment step in fig. 2 (c), the film is removed from the light shielding portion 13, so that the shape of the corrected semi-transparent portion (the semi-transparent portion in which the correction film is formed in part or all of the semi-transparent portion is also referred to as a corrected semi-transparent portion) 12a at the time of fig. 2 (e) when the formation of the correction film 4 is completed is different from the shape of the normal pattern. Specifically, the width (CD) of the corrected semi-transparent portion 12a is larger than the width (CD) of the semi-transparent portion 12 in the normal pattern.
Thus, in fig. 2 (f), a post process for making the CD to be designed is performed.
That is, in fig. 2 (f), the light-shielding complementary film 5 is formed around the edge thereof so that the corrected translucent portion 12a becomes a correct CD. As a method for forming the supplemental film 5, for example, a focused ion beam method (Focused Ion Beam Deposition: focused ion beam deposition) or a laser CVD method may be used.
The film formation method of the supplemental film 5 may be different from that of the light shielding film 3 in a normal pattern, whereby the composition or composition ratio is different, that is, from the composition of the light shielding film 3. The supplemental film 5 is, for example, a film containing carbon as a main component.
The optically complementary film 5 preferably does not substantially transmit exposure light, and has an OD (Optical Density) of 3 or more.
In fig. 2 (f), the supplementary film 5 is formed so that the CD of the corrected semi-transparent portion 12a is the same as that of the normal semi-transparent portion 12 before correction. However, when the transmittance of the corrected semi-transparent portion 12a is excessive or insufficient with respect to the target value, the CD of the corrected semi-transparent portion 12a can be made larger than the normal semi-transparent portion 12 or smaller than the normal semi-transparent portion 12 for the purpose of fine adjustment to approach the target value.
That is, after the completion of the process of forming the correction film 4 and before the subsequent process, the optical performance of the correction film 4 may be checked, and the size of the formation of the supplemental film 5 performed in the subsequent process may be increased or decreased based on the result. In this case, the CD of the formed modified translucent portion 12a is locally smaller or locally larger than that of the normal translucent portion 12.
By applying the photomask correction method in the above-described process, it is possible to precisely correct defects generated in the semi-transparent film 2 having a predetermined transmittance and a phase shift action, as in the case of embodiment 1.
Embodiment 3 of the photomask correction method
Next, embodiment 3 of a photomask correcting method according to the present invention will be described with reference to fig. 3.
Fig. 3 further illustrates another correction method for a case where a defect is generated in a photomask having a transfer pattern 10' formed by patterning a translucent film 2 and a light shielding film 3 on a transparent substrate 1.
In embodiment 3, the transfer pattern 10' to be corrected includes a light transmitting portion where the transparent substrate 1 is exposed, a light shielding portion 13 where at least the light shielding film 3 is formed on the transparent substrate 1, and a semi-transmitting portion 12 where the semi-transmitting film 2 having a phase shift function is formed on the transparent substrate 1. Fig. 3 (a) shows only the light shielding portion 13 and the translucent portion 12, and the translucent portion is omitted. An antireflection layer may be formed on the surface layer of the light shielding film 3.
In embodiment 3, the translucent portion 12 is adjacent to the light shielding portion 13, and is not adjacent to the translucent portion.
Here, the semi-transmissive portion 12 is constituted by a phase shift film having the same transmittance Tm (%) and the phase shift amount Φm (degree) as in the case of embodiment 1 described above. The light shielding portion 13 is a film that does not substantially transmit exposure light, and preferably has an OD of 3 or more.
Fig. 3 (b) shows a case where a white defect 20 is generated in the semi-light transmitting portion 12 of the photomask shown in fig. 3 (a).
Fig. 3 (c) shows a pretreatment step of removing all the semi-transparent film 2 in the region connected to the semi-transparent portion 12 where the white defect 20 is generated, exposing the transparent substrate 1, and trimming the shape of the correction region 22. Here, the semi-transparent film 2 is removed, and a part of the adjacent light shielding film 3 is also removed. The film removing means may be a Laser-based transpiration (Laser Zap) or the like.
Fig. 3 (d) shows a step of forming the 1 st film 4a as a phase adjustment film on the surface of the transparent substrate 1 after exposure in the correction region 22, as in the case of embodiment 1. Further, fig. 3 (e) shows that the 2 nd film 4b is laminated as a transmission adjustment film on the 1 st film 4a formed.
The optical properties, composition and film formation conditions of the 1 st film 4a and the 2 nd film 4b can be the same as those of embodiment 1. Therefore, the formed correction film 4 having the two-layer structure is similar to that of embodiment 1.
In embodiment 3, since all of the semipermeable membrane 2 continuous with the semipermeable membrane in which the defect has occurred is removed, the correction membrane is not adjacent to the normal semipermeable membrane in the corrected photomask. Therefore, separation or overlapping of the two films in the boundary of the correction film and the normal semi-transmissive film does not occur. When the size becomes large, there is a risk of separation or overlapping of transfer onto the transfer target, but in embodiment 3, there is no such risk, which is advantageous.
In embodiment 3, in the pretreatment step in fig. 3 (c), the film is removed in relation to the light shielding portion 13, and therefore, at the time point in fig. 3 (e) when the formation of the correction film 4 is completed, the size of the corrected semi-transparent portion 12a is different from the size of the normal pattern. Specifically, the width (CD) of the corrected semi-transparent portion 12a is larger than the width (CD) of the semi-transparent portion 12 in the normal pattern.
Accordingly, in fig. 3 (f), a post process for making the CD as designed is performed. This point is the same as in embodiment 2.
The composition and optical characteristics of the light-shielding complementary film 5 formed in the subsequent step may be the same as those of embodiment 2. Note that the transmittance of the modified translucent portion 12a may be adjusted by the formation size of the supplemental film 5 as needed, as in embodiment 2.
By applying the photomask correction method in the above-described process, it is possible to precisely correct defects generated in the semi-transparent film 2 having a predetermined transmittance and a phase shift action, as in the case of embodiment 1.
Method for producing photomask
The present invention also includes a method for manufacturing a photomask including the above-described photomask correction method.
The method for manufacturing a photomask of the present invention can be performed by the following steps.
First, a photomask blank including a semi-transparent film having a phase shift function and an optical film having a necessary function formed thereon is prepared. The photomask blank referred to herein includes a photomask blank that has been provided with a portion of a film pattern. Then, a desired pattern is drawn and visualized on a resist film (positive type or negative type) formed on the photomask blank by a laser drawing device or the like, thereby forming a resist pattern. Further, the optical film is etched using the resist pattern as a mask, thereby forming a transfer pattern. The etching may be either dry etching or wet etching, but wet etching is advantageous for display devices, and thus wet etching is versatile.
A photomask on which a pattern for transfer is formed (or a photomask intermediate in which film formation or pattern formation is further performed) is inspected for defects. When a white defect or a black defect is found, the photomask is corrected by applying the photomask correction method of the present invention.
Through the above-described process, even if a defect occurs in the transfer pattern by the phase shift action, it is possible to manufacture a photomask while performing precise correction.
< photomask >)
The present invention also includes a photomask in which the above photomask correction method is implemented.
The photomask has a pattern for transfer including a semi-transparent portion formed by patterning a semi-transparent film formed on a transparent substrate. The photomask further includes a corrected semi-transparent portion formed locally with a corrected film including a material different from the semi-transparent film. The photomask is obtained by forming a correction film for defects generated in the semi-transparent portion.
The semi-light-transmitting portion of the photomask has a transmittance Tm (%) of light of a representative wavelength of exposure light (where Tm > 25) and a phase shift amount phi m (degree) (where 160.ltoreq.phi m.ltoreq.200),
the correction film has a laminated film obtained by laminating a 1 st film including Cr and O and a 2 nd film including Cr, C and O in an arbitrary order,
The 1 st film contains no C or contains C in an amount smaller than that of the 2 nd film,
the 2 nd film contains O in an amount less than the 1 st film.
That is, the photomask has a normal semi-transparent portion and a corrected semi-transparent portion to which correction is applied.
The transfer pattern may further include a light shielding portion that does not substantially transmit exposure light.
In this case, the light shielding portion is formed by forming at least a light shielding film on the transparent substrate, or may be a laminated structure in which a semi-transmissive film is formed on an upper layer side or a lower layer side of the light shielding film.
The lamination order of the 1 st film and the 2 nd film, the optical physical properties or composition of the 1 st film and the 2 nd film, and the optical physical properties or composition of the correction film formed by lamination are as described in connection with the above-described photomask correction method.
In the photomask having such a structure, since the corrected semi-transparent portion is formed to precisely correct the defect generated in the semi-transparent film 2 having a predetermined transmittance and a predetermined phase shift effect, it is very useful to achieve a high resolution by using the phase shift effect.
As a material of the normal semi-transparent film, a material containing chromium (Cr) or a material containing a transition metal and Si (silicon) is exemplified. For example, cr or a Cr compound (preferably CrO, crC, crN, crON or the like), or a material containing Si and at least one of Z (zirconium), nb (niobium), hf (hafnium), ta (tantalum), mo (molybdenum), ti (titanium), or a material composed of an oxide, nitride, oxynitride, carbide, or oxynitride of these materials may be used. More specifically, molybdenum silicon nitride (MoSiN), molybdenum oxynitride (MoSiON), molybdenum silicide oxide (MoSiN), silicon oxynitride (SiON), titanium oxide nitride (TiON), and the like can be cited.
The material of the light shielding film may be Cr or a compound thereof (oxide, nitride, carbide, oxynitride, or oxynitride), or may be a silicide of a metal including Mo, W (tungsten), ta, and Ti, or the above compound of the silicide, for example. The material of the light shielding film is preferably a material capable of wet etching. The material of the light shielding film is preferably a material having etching selectivity to the material of the semi-transparent film. That is, the light shielding film is preferably resistant to the etchant of the semi-transparent film, and furthermore, the semi-transparent film is preferably resistant to the etchant of the light shielding film.
The use of the photomask of the present invention is not particularly limited.
In the present invention, as a photomask utilizing a phase shift effect, a photomask is preferably used for manufacturing a display device including a minute pattern width (CD). The present invention is advantageously used in the case of using a semi-transparent film having a phase shift function, for example, in a phase shift mask having a hole pattern or the like having a CD (diameter) of 3 μm or less (1.0 to 2.5 μm, and further 1.0 to 2.0 μm for a display device having a higher definition) on a transfer target. Alternatively, the present invention can be applied to line and space patterns having the CD (line width, or space width) described above. In particular, as a photomask using a high-transmission phase shift film, which is the object of the present invention, a photomask using a semi-transparent film is exemplified in order to facilitate resolution of an isolated pattern. Here, when a plurality of patterns are arranged so as to have a predetermined regularity and the patterns that affect each other optically are dense patterns, the patterns other than the patterns are isolated patterns.
Method for manufacturing device for display apparatus
The present invention includes a method for manufacturing a device for a display apparatus using the photomask having the above structure. The method includes a step of exposing the transfer pattern of the photomask to light by an exposure device, and transferring the pattern onto a transfer object. The exposure device may be a projection system or an approach system. The former is more advantageous for the manufacture of high-definition devices based on phase shift effects that finely resolve small patterns.
As the optical condition for exposure using the projection system, NA (Numerical Aperture: numerical aperture) of the optical system is preferably 0.08 to 0.15, and the exposure light source preferably includes an i-line. Of course, exposure using a wavelength region including i-g lines may be used.
According to the method for manufacturing a device for a display device of the present invention, since the correction film is made to have a 2-layer structure to correct defects with respect to the translucent portion, the correction can be performed so as to have almost the same optical properties as those of the high-transmittance phase shift film, which is difficult to achieve. That is, defects generated in a semi-transparent film having high transmittance and a phase shift effect can be precisely corrected. Here, since the 1 st film and the 2 nd film constituting the correction film can be formed by the laser CVD method, there is no need to use a correction device of various types, which is particularly advantageous in correction of a photomask for manufacturing a display device having a large size.
< modification >
The photomask correction method, the photomask manufacturing method, the photomask, and the display device manufacturing method according to the present invention are not limited to the embodiments described above, as long as the above-described effects are not lost.
For example, as described above, the present invention is very useful as a photomask used for manufacturing a device for a display device, but the use of the photomask is not particularly limited, and the present invention can be applied to a photomask for manufacturing a semiconductor device.
Further, the photomask applied to the present invention may have other optical films or functional films in addition to the phase shift film or the light shielding film.
Claims (19)
1. A method for manufacturing a photomask having a pattern for transfer including a semi-transparent portion formed by patterning a semi-transparent film formed on a transparent substrate,
the method for manufacturing the photomask comprises the following steps:
in the case where a defect is generated in the semi-light transmitting portion,
determining the defect to be corrected, and determining a correction region in which a correction film for correcting the defect is formed; and
a correction film forming step of forming the correction film in the correction region,
In the correction film forming step, a 1 st film and a 2 nd film are laminated in this order,
the 1 st film has a higher transmittance than the semi-transmissive film,
the 2 nd film has a transmittance for adjusting the transmittance of the correction film.
2. The method for manufacturing a photomask according to claim 1, wherein,
the transfer pattern further includes a light shielding portion having an OD of 3 or more, which is an optical density of exposure light.
3. The method for manufacturing a photomask according to claim 2, wherein,
in the step of determining the correction region, the correction region is determined as a region in which an edge of the correction film is separated from an edge of the light shielding portion.
4. The method for manufacturing a photomask according to claim 3, wherein,
the method for manufacturing the photomask further comprises the following steps: and forming a supplemental film composed of a material having a composition different from that of the light shielding film so as to cover at least an edge of the correction film and an edge of the light shielding portion, thereby trimming a shape of the correction semi-transparent portion.
5. The method for manufacturing a photomask according to claim 2, wherein,
the semi-light-transmitting portion is disposed so as to be sandwiched by the light-shielding portions.
6. The method for manufacturing a photomask according to claim 1 or 2, wherein,
when the transmittance of the 1 st film to a representative wavelength of exposure light using light having a wavelength of 300nm to 500nm is T1, the phase shift amount is Φ1, the transmittance of the 2 nd film to the representative wavelength is T2, and the phase shift amount is Φ2, the following relationships (1) to (5) are satisfied:
(1) Phi 1 is less than or equal to 100 degrees and less than 200 degrees
(2) Phi 2 is more than or equal to 20 degrees and less than 100 degrees
(3) T1＞T2
(4) 55％≤T1≤95％
(5) 25％＜T2＜80％。
7. The method for manufacturing a photomask according to claim 1 or 2, wherein,
the 1 st film and the 2 nd film are different from each other in composition or physical properties.
8. The method for manufacturing a photomask according to claim 1 or 2, wherein,
the transmittance Tm of the semi-transmissive portion for the light of the representative wavelength is 25% < Tm.ltoreq.80%.
9. The method for manufacturing a photomask according to claim 1 or 2, wherein,
the phase shift amount phi m of the semi-transparent part for the light with the representative wavelength is 160 degrees less than or equal to phi m less than or equal to 200 degrees.
10. A photomask having a pattern for transfer, the pattern for transfer including a semi-transparent portion formed by patterning a semi-transparent film formed on a transparent substrate, wherein,
the photomask includes a correction semi-transparent portion locally formed with a correction film containing a material different from that of the semi-transparent film,
The correction film has a laminated film in which a 1 st film and a 2 nd film are laminated in this order,
the 1 st film has a higher transmittance than the semi-transmissive film,
the 2 nd film has a transmittance for adjusting the transmittance of the correction film.
11. The photomask of claim 10, wherein,
the transfer pattern further includes a light shielding portion having an OD of 3 or more, which is an optical density of exposure light.
12. The photomask of claim 11, wherein,
the edge of the correction semi-transparent part is separated from the edge of the shading part.
13. The photomask of claim 12, wherein,
a supplemental film is formed so as to cover at least the edge of the correction semi-transparent portion and the edge of the light shielding portion, the supplemental film being composed of a material having a composition different from that of the light shielding film.
14. The photomask of claim 11, wherein,
the semi-transmissive portion is disposed so as to be sandwiched by the light shielding portions.
15. The photomask according to claim 10 or 11, wherein,
when the transmittance of the 1 st film to a representative wavelength of exposure light using light having a wavelength of 300nm to 500nm is T1, the phase shift amount is Φ1, the transmittance of the 2 nd film to the representative wavelength is T2, and the phase shift amount is Φ2, the following relationships (1) to (5) are satisfied:
(1) Phi 1 is less than or equal to 100 degrees and less than 200 degrees
(2) Phi 2 is more than or equal to 20 degrees and less than 100 degrees
(3) T1＞T2
(4) 55％≤T1≤95％
(5) 25％＜T2＜80％。
16. The photomask according to claim 10 or 11, wherein,
the 1 st film and the 2 nd film are different from each other in composition or physical properties.
17. The photomask according to claim 10 or 11, wherein,
the transmittance Tm of the semi-transmissive portion for the light of the representative wavelength is 25% < Tm.ltoreq.80%.
18. The photomask according to claim 10 or 11, wherein,
the phase shift amount phi m of the semi-transparent part for the light with the representative wavelength is 160 degrees less than or equal to phi m less than or equal to 200 degrees.
19. A method for manufacturing a device for a display device, wherein,
the manufacturing method of the device for the display device comprises the following steps:
preparing the photomask according to claim 10 or 11; and
and a transfer step of exposing the photomask with an exposure device and transferring the transfer pattern to a transfer object.
Applications Claiming Priority (3)
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| JP2018-142919 | 2018-07-30 | ||
| JP2018142919 | 2018-07-30 | ||
| CN201910689040.4A CN110780534B (en) | 2018-07-30 | 2019-07-29 | Photomask, correction method, manufacturing method, and manufacturing method of display device |
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| CN201910689040.4A Division CN110780534B (en) | 2018-07-30 | 2019-07-29 | Photomask, correction method, manufacturing method, and manufacturing method of display device |
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| JP6741893B1 (en) * | 2020-03-04 | 2020-08-19 | 株式会社エスケーエレクトロニクス | Halftone mask defect correction method, halftone mask manufacturing method, and halftone mask |
| JP7461220B2 (en) * | 2020-05-25 | 2024-04-03 | 株式会社エスケーエレクトロニクス | How to modify a photomask |
| JP7449187B2 (en) | 2020-07-20 | 2024-03-13 | Hoya株式会社 | Method for manufacturing phase shift mask, phase shift mask, and display device manufacturing method |
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| JPH05333534A (en) * | 1992-05-30 | 1993-12-17 | Sony Corp | Defect correcting method for phase shift mask |
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| JP2009020312A (en) * | 2007-07-12 | 2009-01-29 | Hoya Corp | Method for correcting defect in gray tone mask, method for manufacturing gray tone mask, gray tone mask, and method for transferring pattern |
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2019
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- 2019-07-29 CN CN202310618401.2A patent/CN116626982A/en active Pending
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Also Published As
| Publication number | Publication date |
|---|---|
| TWI821669B (en) | 2023-11-11 |
| KR20200013601A (en) | 2020-02-07 |
| JP7353094B2 (en) | 2023-09-29 |
| CN110780534B (en) | 2023-06-13 |
| TW202013445A (en) | 2020-04-01 |
| JP2020024406A (en) | 2020-02-13 |
| KR102439047B1 (en) | 2022-09-02 |
| CN110780534A (en) | 2020-02-11 |
| TW202132909A (en) | 2021-09-01 |
| KR20210058792A (en) | 2021-05-24 |
| TWI729444B (en) | 2021-06-01 |
| KR102254646B1 (en) | 2021-05-21 |
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