CN116623161A - Temperature control assembly and method applied to top of ceramic dome of semiconductor device - Google Patents
Temperature control assembly and method applied to top of ceramic dome of semiconductor device Download PDFInfo
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- CN116623161A CN116623161A CN202310531144.9A CN202310531144A CN116623161A CN 116623161 A CN116623161 A CN 116623161A CN 202310531144 A CN202310531144 A CN 202310531144A CN 116623161 A CN116623161 A CN 116623161A
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- 239000000919 ceramic Substances 0.000 title claims abstract description 56
- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims abstract description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 37
- 239000010439 graphite Substances 0.000 claims abstract description 37
- 238000005485 electric heating Methods 0.000 claims abstract description 36
- 238000001816 cooling Methods 0.000 claims abstract description 34
- 239000000498 cooling water Substances 0.000 claims abstract description 30
- 229920000742 Cotton Polymers 0.000 claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims description 6
- 229910052582 BN Inorganic materials 0.000 claims description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 210000002268 wool Anatomy 0.000 claims 2
- 230000008021 deposition Effects 0.000 abstract description 3
- 230000008569 process Effects 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000005674 electromagnetic induction Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Induction Heating (AREA)
Abstract
The invention relates to a temperature control assembly and a method applied to the top of a ceramic dome of semiconductor equipment, which belong to the technical field of semiconductor equipment, wherein the temperature control assembly comprises a cooling plate, a first graphite sheet, an electric heating plate, a second graphite sheet, an insulating heat-conducting plate, a radio frequency coil and heat-conducting cotton which are sequentially laminated from top to bottom; the lower surface of the heat conducting cotton is attached to the top of the ceramic dome; the cooling plate is internally provided with a cooling water pipeline. The scheme realizes rapid and uniform temperature control, ensures that the ceramic dome temperature control of the semiconductor equipment is efficient and stable, thereby effectively improving the efficiency and quality of the processes such as semiconductor surface deposition and the like, and has the advantages of smaller volume, space saving and convenient use.
Description
Technical Field
The invention belongs to the technical field of semiconductor equipment, and particularly relates to a temperature control assembly and a temperature control method applied to the top of a ceramic dome of semiconductor equipment.
Background
In some of the processes of semiconductor devices widely used at present, for example, an HDP (High Density Plasma, high-density plasma) deposition reaction is performed in a vacuum chamber between a chamber of the HDP device and a ceramic dome (ceramic dome), wherein the ceramic dome needs to be controlled to a temperature above, for example, 100 ℃, and a radio frequency coil is required above the ceramic dome, so that a gas introduced into the chamber is ionized by electromagnetic induction to generate plasma.
The conventional temperature control structure, for example, as mentioned in chinese patent application publication No. CN103681300a, has the following problems by using ion bombardment or providing a heating device at the periphery of the ceramic dome: 1. because the ceramic dome has poor heat conductivity, the temperature control structure has slower heat transfer and poor uniformity; 2. the volume of the temperature control structure is difficult to reduce, and the temperature control structure occupies a larger space; 3. the periphery of the temperature control structure is also required to be provided with a cover body for blocking, so that other components are prevented from being influenced by the generated higher temperature, and the space occupation is increased.
Disclosure of Invention
Based on the technical problems in the prior art, the invention provides a temperature control assembly and a temperature control method applied to the top of a ceramic dome of semiconductor equipment, which solve the problems of slow heat transfer, non-uniformity, instability and the like and reduce the occupied space.
According to the technical scheme, the invention provides a temperature control assembly applied to the top of a ceramic dome of semiconductor equipment, which comprises a cooling plate, a first graphite sheet, an electric heating plate, a second graphite sheet, an insulating heat-conducting plate, a radio frequency coil and heat-conducting cotton, wherein the cooling plate, the first graphite sheet, the electric heating plate, the second graphite sheet, the insulating heat-conducting plate, the radio frequency coil and the heat-conducting cotton are sequentially laminated from top to bottom; the lower surface of the heat conducting cotton is attached to the top of the ceramic dome; the cooling plate is internally provided with a cooling water pipeline.
Further, a cooling water pipeline of the cooling plate is connected with a container and a pump; the input end and the output end of the electric heating plate are connected with a power supply through a circuit; the input end and the output end of the radio frequency coil are connected with a radio frequency power supply and a radio frequency matcher through circuits.
Further, the part of the temperature control assembly above the radio frequency coil is provided with a wire through hole which penetrates through the upper part and the lower part, and an input end wire and an output end wire of the radio frequency coil penetrate through the wire through hole and extend to the upper part of the temperature control assembly.
Further, the thickness of the first graphite flake is greater than the thickness of the second graphite flake.
Preferably, the first graphite sheet has a thickness of 1.5mm and the second graphite sheet has a thickness of 0.25mm.
Preferably, the insulating heat-conducting plate is an aluminum nitride ceramic insulating heat-conducting plate, and the heat-conducting cotton is boron nitride heat-conducting cotton.
Preferably, the temperature control assembly is flat cylindrical.
The invention also provides a temperature control method applied to the top of the ceramic dome of the semiconductor device, which is controlled by adopting the temperature control assembly, comprising the following steps:
continuously introducing cooling water into a cooling water pipeline of the cooling plate, wherein the temperature of the cooling water is 35+/-5 ℃;
when the radio frequency is started, the flow of cooling water is the first flow; when the radio frequency is not started, the flow of the cooling water is the second flow; the first flow is greater than the second flow;
the electric heating plate is powered on, the temperature is controlled by adjusting the magnitude of the current flowing through the electric heating plate, and finally the temperature of the ceramic dome is stabilized at a steady-state temperature.
Preferably, the first flow rate is 5.7LPM to 7.6LPM and the second flow rate is 2.9LPM to 4.0LPM.
Preferably, the temperature rise rate of the ceramic dome is 3 ℃/min, the temperature drop rate of the ceramic dome is 8 ℃/min, and the steady state temperature of the ceramic dome is 110 ℃ or 120 ℃.
Compared with the prior art, the invention has the following beneficial technical effects:
1. the temperature control assembly and the method applied to the top of the ceramic dome of the semiconductor device realize rapid and uniform temperature control, ensure the high efficiency and stability of the temperature control of the ceramic dome of the semiconductor device, and effectively improve the efficiency and quality of the processes such as deposition on the surface of the semiconductor.
2. The temperature control component applied to the top of the ceramic dome of the semiconductor device has smaller volume, saves space and is convenient to use.
3. The temperature control component applied to the top of the ceramic dome of the semiconductor device can reduce the temperature variation range by arranging the graphite sheets with different thicknesses, and realize accurate temperature control.
4. The temperature control assembly and the method for the top of the ceramic dome of the semiconductor device adopt a mode that cooling water at 35 ℃ always flows, and further can realize accurate temperature control by controlling the current of the electric heating plate, and the control method is simple, quick, mature and stable.
Drawings
FIG. 1 is an assembled schematic view of an embodiment of the present invention.
Fig. 2 is a schematic diagram of the assembled embodiment of fig. 1.
Reference numerals in the drawings illustrate:
1. a cooling plate;
2. a first graphite sheet;
3. an electric heating plate;
4. a second graphite sheet;
5. an insulating heat-conducting plate;
6. a radio frequency coil;
7. and heat conducting cotton.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that, for convenience of description, only the portions related to the present invention are shown in the drawings. Embodiments of the invention and features of the embodiments may be combined with each other without conflict.
It should be noted that the terms "first," "second," and the like herein are merely used for distinguishing between different devices, modules, or units and not for limiting the order or interdependence of the functions performed by such devices, modules, or units.
It should be noted that references to "one", "a plurality" and "a plurality" in this disclosure are intended to be illustrative rather than limiting, and those skilled in the art will appreciate that "one or more" is intended to be construed as "one or more" unless the context clearly indicates otherwise.
The invention provides a temperature control assembly and a temperature control method applied to the top of a ceramic dome of semiconductor equipment, belongs to the technical field of semiconductor equipment, solves the problems of slow heat transfer, non-uniformity, instability and the like in the prior art, and reduces occupied space. The semiconductor device such as a plasma chemical vapor deposition device or other devices requiring plasma generation in a reaction chamber is suitable for the semiconductor device, the semiconductor device is provided with a cavity, a ceramic dome is arranged above the cavity, and a vacuum reaction chamber is enclosed between the cavity and the ceramic dome. The solution of the invention provides a temperature control assembly above the reaction chamber, i.e. above the top of the ceramic dome, thereby controlling the temperature of the ceramic dome.
Referring to fig. 1 and 2, a temperature control assembly applied to a top of a ceramic dome of a semiconductor device according to an embodiment of the present invention includes a cooling plate 1, a first graphite sheet 2, an electric heating plate 3, a second graphite sheet 4, an insulating heat-conducting plate 5, a radio frequency coil 6 and heat-conducting cotton 7 sequentially laminated from top to bottom.
The cooling plate 1 is located the upper strata, and cooling plate 1 is better metal aluminium material for the heat conductivity for example, and cooling plate 1 inside is provided with cooling water pipe, and cooling water pipe is coil-shaped for example, provides great area of contact and scope, guarantees cooling efficiency. The input end and the output end of the cooling water pipe of the cooling plate 1 are located outside the cooling plate 1, for example, are arranged on the upper surface of the cooling plate 1 in a protruding mode, the input end and the output end of the cooling water pipe are externally connected with a container of cooling water and a pump, the cooling water pipe is a circulating pipeline, and the pump controls the cooling water to continuously flow in the cooling water pipe at a set flow rate.
The electric heating plate 3 is located below the cooling plate 1, and the electric heating plate 3 is made of metal aluminum material with good heat conductivity, for example, an electric heating wire is arranged inside the electric heating plate 3, and after being electrified, the electric heating plate 3 generates heat, and an input end and an output end lead of the electric heating plate 3 are exposed to the outside and are connected with a power supply, a switch/control system and the like through a circuit. The heating temperature of the electric heating plate 3 is controlled by adjusting the current flowing through the electric heating plate by, for example, adjusting the power supply voltage or adjusting an adjustable resistor connected in series with the heating wire.
The first graphite sheet 2 is closely disposed between the cooling plate 1 and the electric heating plate 3, and the heat is rapidly transferred in the XY direction (horizontal direction) and the heating or cooling is more uniform by utilizing the characteristic that the heat conductivity of the graphite sheet is high. In the heating process of the electric heating plate 3, the heat emitted by the electric heating plate 3 can be quickly absorbed and cooled at the cooling plate 1 and the upper position, other parts of the equipment are protected from being influenced by the electric heating plate 3, and the need of arranging a larger cover body for heat insulation in the prior art is avoided. When the electric heating plate 3 is closed, the cooling plate 1 can also rapidly cool down the temperature control assembly and the ceramic dome.
The second graphite sheet 4 is arranged under the electric heating plate 3 in a clinging manner, and the main function of the electric heating plate is to enable heat to conduct heat rapidly and uniformly in the horizontal direction, meanwhile, the thickness of the first graphite sheet 2 is larger than that of the second graphite sheet 4, for example, the thickness of the first graphite sheet 2 is 1.5mm, and the thickness of the second graphite sheet 4 is 0.25mm. The temperature variation range can be reduced through graphite sheets with different thicknesses, and the accurate temperature control is realized.
Specifically, the graphite sheet has a horizontal conduction thermal conductivity of about 300 to 1200W/(m.K) and a vertical conduction of about 20 to 30W/(m.K), and for example, the electric heating wire in the electric heating plate 3 is not completely covered, and the graphite sheet plays a main role of making the heat distribution in the horizontal direction more uniform. The adoption of the two layers of graphite sheets with different thicknesses can reduce the temperature change range through simulation results, because the temperature is downwards conducted to control the temperature rise and the steady-state temperature of the ceramic dome, the cooling plate 1 is arranged above the first graphite sheet 2, and if the first graphite sheet 2 is relatively thin, the influence of the cooling plate 1 on the temperature change can be increased.
The insulating heat-conducting plate 5 is closely arranged below the second graphite sheet 4, and the insulating heat-conducting plate 5 is preferably an aluminum nitride ceramic insulating heat-conducting plate, and can conduct heat rapidly and uniformly and insulate.
And the radio frequency coil 6 is arranged below the power supply, and the input end and the output end of the radio frequency coil 6 are exposed outside and are connected with the radio frequency power supply and the radio frequency matcher through circuits. For example, the portions of the temperature control assembly above the radio frequency coil 6 (i.e., the cooling plate 1, the first graphite sheet 2, the electric heating plate 3, the second graphite sheet 4, and the insulating heat conducting plate 5) are all provided with wire through holes penetrating up and down, and the input end wires and the output end wires of the radio frequency coil 6 extend to above the temperature control assembly (above the cooling plate 1) through the wire through holes. The radio frequency coil 6 is used to generate plasma in the vacuum chamber gas by electromagnetic induction.
The lowest layer is made of heat conducting cotton 7, preferably boron nitride heat conducting cotton, which is transparent to electromagnetic waves, and has high heat conductivity, high flexibility and low dielectric coefficient. The upper surface of the heat conducting cotton 7 is attached to the radio frequency coil 6, and the lower surface is attached to the top of the ceramic dome.
The ceramic dome is also provided with a temperature measuring component for measuring the temperature of the ceramic dome in real time in a contact or non-contact temperature measuring mode. More preferably, the temperature measuring component and the temperature control component of the invention are both connected to a control system, and the temperature measuring component sends feedback signals to the control system, and the control system controls the current of the electric heating plate 3 and/or the cooling water flow of the cooling plate 1, so that the temperature is raised, lowered or kept unchanged. Such control system and program are easy to design and implement based on the prior art, and therefore are not described in detail.
In one embodiment, the temperature control assembly and the components of each layer are in a flat cylindrical shape, and are matched with the shapes of the radio frequency coil 6 and the ceramic dome, and are in a thin plate shape as shown in fig. 2 after being combined, so that the occupied space is small. Of course, the solution of the present invention is not limited to this, and the whole temperature control assembly and the components of each layer may have other shapes. The components of each layer of the temperature control assembly are fixed by means of heat-conducting glue, screws or direct pressing, for example, in the embodiment shown in fig. 1 and 2, a cooling plate 1, an electric heating plate 3 and/or an insulating heat-conducting plate 5 which are hard and have a certain thickness are used as a base plate to be provided with screw holes, and other components are screwed and installed by screws; the cooling plate 1 is also provided with a plurality of connecting plates extending outwards so as to be fixedly installed with other parts of the semiconductor device, and for this purpose, the shape and the position of the connecting plates can be designed and adjusted according to actual requirements.
Based on the temperature control assembly, the invention also provides a temperature control method applied to the top of the ceramic dome of the semiconductor device, which comprises the following steps:
cooling water is continuously introduced into a cooling water pipeline of the cooling plate 1, and the temperature of the cooling water is 35+/-5 ℃.
When the Radio Frequency (RF) is turned on, the flow rate of the cooling water is a first flow rate; when the radio frequency is not started, the flow rate of the cooling water is the second flow rate. The first flow rate is greater than the second flow rate, preferably the first flow rate is 5.7LPM to 7.6LPM and the second flow rate is 2.9LPM to 4.0LPM.
The electric heating plate 3 is powered on, the electric heating plate 3 has the maximum current of 20A, the temperature is controlled by adjusting the current flowing through the electric heating plate 3, and finally the temperature of the ceramic dome is stabilized at the steady-state temperature; the process steps of generating plasma are then performed similarly to the prior art. Preferably, the temperature rise rate of the ceramic dome is 3 ℃/min, the temperature drop rate of the ceramic dome is 8 ℃/min, and the steady state temperature of the ceramic dome is 110 ℃ or 120 ℃.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. The temperature control assembly applied to the top of the ceramic dome of the semiconductor device is characterized by comprising a cooling plate (1), a first graphite sheet (2), an electric heating plate (3), a second graphite sheet (4), an insulating heat-conducting plate (5), a radio frequency coil (6) and heat-conducting cotton (7) which are sequentially laminated from top to bottom; the lower surface of the heat conducting cotton (7) is attached to the top of the ceramic dome; the cooling plate (1) is internally provided with a cooling water pipeline.
2. A temperature control assembly applied to the ceramic dome top of a semiconductor device according to claim 1, characterized in that the cooling water pipe of the cooling plate (1) is connected with a container and a pump; the input end and the output end of the electric heating plate (3) are connected with a power supply through a circuit; the input end and the output end of the radio frequency coil (6) are connected with a radio frequency power supply and a radio frequency matcher through circuits.
3. The temperature control assembly applied to the top of a ceramic dome of a semiconductor device according to claim 1, wherein the temperature control assembly is provided with wire through holes penetrating up and down at portions above the radio frequency coil (6), and input and output wires of the radio frequency coil (6) extend to above the temperature control assembly through the wire through holes.
4. A temperature control assembly applied to the top of a ceramic dome of a semiconductor device as claimed in claim 1, wherein the thickness of the first graphite sheet (2) is greater than the thickness of the second graphite sheet (4).
5. A temperature control assembly for application to the top of a ceramic dome of a semiconductor device as claimed in claim 4, wherein the first graphite sheet (2) has a thickness of 1.5mm and the second graphite sheet (4) has a thickness of 0.25mm.
6. A temperature control assembly applied to the top of a ceramic dome of a semiconductor device according to claim 1, characterized in that the insulating heat conducting plate (5) is an aluminum nitride ceramic insulating heat conducting plate, and the heat conducting wool (7) is a boron nitride heat conducting wool.
7. A temperature control assembly for use on top of a ceramic dome of a semiconductor device as claimed in any one of claims 1 to 5, wherein the temperature control assembly is flat cylindrical.
8. A temperature control method applied to the top of a ceramic dome of a semiconductor device, characterized in that it is controlled by a temperature control assembly according to any one of claims 1 to 7, comprising the steps of:
continuously introducing cooling water into the cooling water pipeline of the cooling plate (1), wherein the temperature of the cooling water is 35+/-5 ℃;
when the radio frequency is started, the flow of the cooling water is a first flow; when the radio frequency is not started, the flow of the cooling water is the second flow; the first flow rate is greater than the second flow rate;
the electric heating plate (3) is powered on, the temperature is controlled by adjusting the magnitude of the current flowing through the electric heating plate (3), and finally the temperature of the ceramic dome is stabilized at a steady-state temperature.
9. The method of claim 8, wherein the first flow rate is 5.7LPM to 7.6LPM and the second flow rate is 2.9LPM to 4.0LPM.
10. The method of claim 8, wherein the ceramic dome has a heating rate of 3 ℃/min, a cooling rate of 8 ℃/min, and a steady state temperature of 110 ℃ or 120 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310531144.9A CN116623161A (en) | 2023-05-11 | 2023-05-11 | Temperature control assembly and method applied to top of ceramic dome of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310531144.9A CN116623161A (en) | 2023-05-11 | 2023-05-11 | Temperature control assembly and method applied to top of ceramic dome of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116623161A true CN116623161A (en) | 2023-08-22 |
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ID=87637467
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310531144.9A Pending CN116623161A (en) | 2023-05-11 | 2023-05-11 | Temperature control assembly and method applied to top of ceramic dome of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116623161A (en) |
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2023
- 2023-05-11 CN CN202310531144.9A patent/CN116623161A/en active Pending
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