CN116607132A - Plating bath composition for electroless gold plating and method of depositing gold layer - Google Patents
Plating bath composition for electroless gold plating and method of depositing gold layer Download PDFInfo
- Publication number
- CN116607132A CN116607132A CN202310280778.1A CN202310280778A CN116607132A CN 116607132 A CN116607132 A CN 116607132A CN 202310280778 A CN202310280778 A CN 202310280778A CN 116607132 A CN116607132 A CN 116607132A
- Authority
- CN
- China
- Prior art keywords
- gold
- plating
- plating bath
- gold plating
- formula
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007747 plating Methods 0.000 title claims abstract description 224
- 239000010931 gold Substances 0.000 title claims abstract description 192
- 229910052737 gold Inorganic materials 0.000 title claims abstract description 189
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 title claims abstract description 155
- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000000151 deposition Methods 0.000 title claims abstract description 15
- 239000000203 mixture Substances 0.000 title abstract description 8
- 150000001875 compounds Chemical class 0.000 claims abstract description 67
- -1 gold ions Chemical class 0.000 claims abstract description 49
- 239000003623 enhancer Substances 0.000 claims abstract description 42
- 239000003638 chemical reducing agent Substances 0.000 claims abstract description 27
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 22
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 11
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical class NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims description 33
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 150000003839 salts Chemical class 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 239000008139 complexing agent Substances 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 7
- 125000001931 aliphatic group Chemical group 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 5
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical class NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 claims description 4
- 150000001299 aldehydes Chemical class 0.000 claims description 4
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical class OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 claims description 4
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 4
- 125000003172 aldehyde group Chemical group 0.000 claims description 3
- 150000003934 aromatic aldehydes Chemical class 0.000 claims description 3
- 150000001735 carboxylic acids Chemical class 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- PTMHPRAIXMAOOB-UHFFFAOYSA-N phosphoramidic acid Chemical class NP(O)(O)=O PTMHPRAIXMAOOB-UHFFFAOYSA-N 0.000 claims description 3
- 235000000346 sugar Nutrition 0.000 claims description 3
- 150000008163 sugars Chemical class 0.000 claims description 3
- 229910001020 Au alloy Inorganic materials 0.000 claims description 2
- 229910000531 Co alloy Inorganic materials 0.000 claims description 2
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 2
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 2
- 229910001252 Pd alloy Inorganic materials 0.000 claims description 2
- 239000003353 gold alloy Substances 0.000 claims description 2
- 125000000753 cycloalkyl group Chemical group 0.000 abstract description 4
- 238000005476 soldering Methods 0.000 abstract description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 26
- HHLFWLYXYJOTON-UHFFFAOYSA-N glyoxylic acid Chemical compound OC(=O)C=O HHLFWLYXYJOTON-UHFFFAOYSA-N 0.000 description 17
- 229910052763 palladium Inorganic materials 0.000 description 13
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 9
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- 238000007654 immersion Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 239000000243 solution Substances 0.000 description 7
- 239000003381 stabilizer Substances 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- 238000007772 electroless plating Methods 0.000 description 6
- 229910001096 P alloy Inorganic materials 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910021645 metal ion Inorganic materials 0.000 description 5
- MFIGJRRHGZYPDD-UHFFFAOYSA-N n,n'-di(propan-2-yl)ethane-1,2-diamine Chemical compound CC(C)NCCNC(C)C MFIGJRRHGZYPDD-UHFFFAOYSA-N 0.000 description 5
- 238000001556 precipitation Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 244000248349 Citrus limon Species 0.000 description 4
- 235000005979 Citrus limon Nutrition 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- ZTQSAGDEMFDKMZ-UHFFFAOYSA-N butyric aldehyde Natural products CCCC=O ZTQSAGDEMFDKMZ-UHFFFAOYSA-N 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 150000001469 hydantoins Chemical class 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 description 2
- FTZILAQGHINQQR-UHFFFAOYSA-N 2-Methylpentanal Chemical compound CCCC(C)C=O FTZILAQGHINQQR-UHFFFAOYSA-N 0.000 description 2
- IAVREABSGIHHMO-UHFFFAOYSA-N 3-hydroxybenzaldehyde Chemical compound OC1=CC=CC(C=O)=C1 IAVREABSGIHHMO-UHFFFAOYSA-N 0.000 description 2
- RGHHSNMVTDWUBI-UHFFFAOYSA-N 4-hydroxybenzaldehyde Chemical compound OC1=CC=C(C=O)C=C1 RGHHSNMVTDWUBI-UHFFFAOYSA-N 0.000 description 2
- 229910000521 B alloy Inorganic materials 0.000 description 2
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- CJKRXEBLWJVYJD-UHFFFAOYSA-N N,N'-diethylethylenediamine Chemical compound CCNCCNCC CJKRXEBLWJVYJD-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- NBBJYMSMWIIQGU-UHFFFAOYSA-N Propionic aldehyde Chemical compound CCC=O NBBJYMSMWIIQGU-UHFFFAOYSA-N 0.000 description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical class OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 description 2
- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 125000005263 alkylenediamine group Chemical group 0.000 description 2
- 150000001412 amines Chemical group 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- HUMNYLRZRPPJDN-UHFFFAOYSA-N benzaldehyde Chemical compound O=CC1=CC=CC=C1 HUMNYLRZRPPJDN-UHFFFAOYSA-N 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- JXTHNDFMNIQAHM-UHFFFAOYSA-N dichloroacetic acid Chemical compound OC(=O)C(Cl)Cl JXTHNDFMNIQAHM-UHFFFAOYSA-N 0.000 description 2
- 238000002845 discoloration Methods 0.000 description 2
- WSDISUOETYTPRL-UHFFFAOYSA-N dmdm hydantoin Chemical compound CC1(C)N(CO)C(=O)N(CO)C1=O WSDISUOETYTPRL-UHFFFAOYSA-N 0.000 description 2
- NFDRPXJGHKJRLJ-UHFFFAOYSA-N edtmp Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CCN(CP(O)(O)=O)CP(O)(O)=O NFDRPXJGHKJRLJ-UHFFFAOYSA-N 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- LEQAOMBKQFMDFZ-UHFFFAOYSA-N glyoxal Chemical compound O=CC=O LEQAOMBKQFMDFZ-UHFFFAOYSA-N 0.000 description 2
- ZBKIUFWVEIBQRT-UHFFFAOYSA-N gold(1+) Chemical compound [Au+] ZBKIUFWVEIBQRT-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 239000002609 medium Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 2
- 239000003607 modifier Substances 0.000 description 2
- VATUKUMHBXZSCD-UHFFFAOYSA-N n,n'-dipropylethane-1,2-diamine Chemical compound CCCNCCNCCC VATUKUMHBXZSCD-UHFFFAOYSA-N 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- NHOGRGYHBHZMIL-UHFFFAOYSA-N octane-4,5-diamine Chemical compound CCCC(N)C(N)CCC NHOGRGYHBHZMIL-UHFFFAOYSA-N 0.000 description 2
- DTUQWGWMVIHBKE-UHFFFAOYSA-N phenylacetaldehyde Chemical compound O=CCC1=CC=CC=C1 DTUQWGWMVIHBKE-UHFFFAOYSA-N 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 150000003464 sulfur compounds Chemical class 0.000 description 2
- 125000001302 tertiary amino group Chemical group 0.000 description 2
- CWERGRDVMFNCDR-UHFFFAOYSA-N thioglycolic acid Chemical compound OC(=O)CS CWERGRDVMFNCDR-UHFFFAOYSA-N 0.000 description 2
- NJRXVEJTAYWCQJ-UHFFFAOYSA-N thiomalic acid Chemical compound OC(=O)CC(S)C(O)=O NJRXVEJTAYWCQJ-UHFFFAOYSA-N 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- YHMYGUUIMTVXNW-UHFFFAOYSA-N 1,3-dihydrobenzimidazole-2-thione Chemical compound C1=CC=C2NC(S)=NC2=C1 YHMYGUUIMTVXNW-UHFFFAOYSA-N 0.000 description 1
- RLYHRSTTXXXKPA-UHFFFAOYSA-N 1-N-(2,3-dimethylbutyl)-4,5-dimethylhexane-1,2-diamine Chemical compound CC(CC(CNCC(C(C)C)C)N)C(C)C RLYHRSTTXXXKPA-UHFFFAOYSA-N 0.000 description 1
- VWFYCJYNQXSFTA-UHFFFAOYSA-N 1-N-(3,3-dimethylbutyl)-5,5-dimethylhexane-1,2-diamine Chemical compound CC(CCC(CNCCC(C)(C)C)N)(C)C VWFYCJYNQXSFTA-UHFFFAOYSA-N 0.000 description 1
- WGOQCLPPNMRUHU-UHFFFAOYSA-N 1-N-butylhexane-1,2-diamine Chemical compound CCCCNCC(N)CCCC WGOQCLPPNMRUHU-UHFFFAOYSA-N 0.000 description 1
- LNSQCMZLXWAQBY-UHFFFAOYSA-N 1-n-ethylbutane-1,2-diamine Chemical compound CCNCC(N)CC LNSQCMZLXWAQBY-UHFFFAOYSA-N 0.000 description 1
- OWEGMIWEEQEYGQ-UHFFFAOYSA-N 100676-05-9 Natural products OC1C(O)C(O)C(CO)OC1OCC1C(O)C(O)C(O)C(OC2C(OC(O)C(O)C2O)CO)O1 OWEGMIWEEQEYGQ-UHFFFAOYSA-N 0.000 description 1
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 1
- KQDYUNYMUMMKOL-UHFFFAOYSA-N 2,5-dimethylhexane-3,4-diamine Chemical compound CC(C)C(N)C(N)C(C)C KQDYUNYMUMMKOL-UHFFFAOYSA-N 0.000 description 1
- BHTRKISIDQZUQX-UHFFFAOYSA-N 2-hydroxy-3-[(2-methylpropan-2-yl)oxycarbonylamino]-4-phenylbutanoic acid Chemical compound CC(C)(C)OC(=O)NC(C(O)C(O)=O)CC1=CC=CC=C1 BHTRKISIDQZUQX-UHFFFAOYSA-N 0.000 description 1
- CMWKITSNTDAEDT-UHFFFAOYSA-N 2-nitrobenzaldehyde Chemical compound [O-][N+](=O)C1=CC=CC=C1C=O CMWKITSNTDAEDT-UHFFFAOYSA-N 0.000 description 1
- JSIAIROWMJGMQZ-UHFFFAOYSA-N 2h-triazol-4-amine Chemical compound NC1=CNN=N1 JSIAIROWMJGMQZ-UHFFFAOYSA-N 0.000 description 1
- CPMDYTUUHTVWKQ-UHFFFAOYSA-N 3-methyl-1-n-propan-2-ylbutane-1,2-diamine Chemical compound CC(C)NCC(N)C(C)C CPMDYTUUHTVWKQ-UHFFFAOYSA-N 0.000 description 1
- YJWJGLQYQJGEEP-UHFFFAOYSA-N 3-methylpentanal Chemical compound CCC(C)CC=O YJWJGLQYQJGEEP-UHFFFAOYSA-N 0.000 description 1
- ZETIVVHRRQLWFW-UHFFFAOYSA-N 3-nitrobenzaldehyde Chemical compound [O-][N+](=O)C1=CC=CC(C=O)=C1 ZETIVVHRRQLWFW-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- HJPXWDZDQQDRNY-UHFFFAOYSA-N 4-methyl-1-N-(2-methylpropyl)pentane-1,2-diamine Chemical compound CC(C)CNCC(N)CC(C)C HJPXWDZDQQDRNY-UHFFFAOYSA-N 0.000 description 1
- JGEGJYXHCFUMJF-UHFFFAOYSA-N 4-methylpentanal Chemical compound CC(C)CCC=O JGEGJYXHCFUMJF-UHFFFAOYSA-N 0.000 description 1
- BXRFQSNOROATLV-UHFFFAOYSA-N 4-nitrobenzaldehyde Chemical compound [O-][N+](=O)C1=CC=C(C=O)C=C1 BXRFQSNOROATLV-UHFFFAOYSA-N 0.000 description 1
- GUBGYTABKSRVRQ-XLOQQCSPSA-N Alpha-Lactose Chemical compound O[C@@H]1[C@@H](O)[C@@H](O)[C@@H](CO)O[C@H]1O[C@@H]1[C@@H](CO)O[C@H](O)[C@H](O)[C@H]1O GUBGYTABKSRVRQ-XLOQQCSPSA-N 0.000 description 1
- ABNSYGSTUVEVBE-UHFFFAOYSA-N C(C(C)(C)C)C(CNCC(C)(C)C)N Chemical compound C(C(C)(C)C)C(CNCC(C)(C)C)N ABNSYGSTUVEVBE-UHFFFAOYSA-N 0.000 description 1
- HZQDLBRIKJGGAL-UHFFFAOYSA-N C(CC(C)C)C(CNCCC(C)C)N Chemical compound C(CC(C)C)C(CNCCC(C)C)N HZQDLBRIKJGGAL-UHFFFAOYSA-N 0.000 description 1
- HMEGUKNBZJUDGU-UHFFFAOYSA-N C(CCCC)C(CNCCCCC)N Chemical compound C(CCCC)C(CNCCCCC)N HMEGUKNBZJUDGU-UHFFFAOYSA-N 0.000 description 1
- AVGPHHLWNPWNPM-UHFFFAOYSA-N CC(C(CC)C)C(CNC(C(CC)C)C)N Chemical compound CC(C(CC)C)C(CNC(C(CC)C)C)N AVGPHHLWNPWNPM-UHFFFAOYSA-N 0.000 description 1
- AKKWKRVQPQSBCN-UHFFFAOYSA-N CC(CC(CNCC(CC)(C)C)N)(CC)C Chemical compound CC(CC(CNCC(CC)(C)C)N)(CC)C AKKWKRVQPQSBCN-UHFFFAOYSA-N 0.000 description 1
- KVVJKOKPGPUQPN-UHFFFAOYSA-N CC(CC(CNCC(CCC)C)N)CCC Chemical compound CC(CC(CNCC(CCC)C)N)CCC KVVJKOKPGPUQPN-UHFFFAOYSA-N 0.000 description 1
- PDILCZSDGOEYEQ-UHFFFAOYSA-N CC(CCC(CNCCC(CC)C)N)CC Chemical compound CC(CCC(CNCCC(CC)C)N)CC PDILCZSDGOEYEQ-UHFFFAOYSA-N 0.000 description 1
- YSUUYSYQNXAPKG-UHFFFAOYSA-N CC(CCC)(C)C(CNC(CCC)(C)C)N Chemical compound CC(CCC)(C)C(CNC(CCC)(C)C)N YSUUYSYQNXAPKG-UHFFFAOYSA-N 0.000 description 1
- VIIYBKHOAANRAC-UHFFFAOYSA-N CC(CCCC(CNCCCC(C)C)N)C Chemical compound CC(CCCC(CNCCCC(C)C)N)C VIIYBKHOAANRAC-UHFFFAOYSA-N 0.000 description 1
- DTQPOPHNISEBIW-UHFFFAOYSA-N CC(CCCC)C(CNC(CCCC)C)N Chemical compound CC(CCCC)C(CNC(CCCC)C)N DTQPOPHNISEBIW-UHFFFAOYSA-N 0.000 description 1
- CITCOZGDILKPHL-UHFFFAOYSA-N CP(O)(O)=O.CP(O)(O)=O.CP(O)(O)=O.CP(O)(O)=O.CP(O)(O)=O.NCCNCCN Chemical compound CP(O)(O)=O.CP(O)(O)=O.CP(O)(O)=O.CP(O)(O)=O.CP(O)(O)=O.NCCNCCN CITCOZGDILKPHL-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229940126062 Compound A Drugs 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 1
- WQZGKKKJIJFFOK-QTVWNMPRSA-N D-mannopyranose Chemical compound OC[C@H]1OC(O)[C@@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-QTVWNMPRSA-N 0.000 description 1
- HMFHBZSHGGEWLO-SOOFDHNKSA-N D-ribofuranose Chemical compound OC[C@H]1OC(O)[C@H](O)[C@@H]1O HMFHBZSHGGEWLO-SOOFDHNKSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- 229940120146 EDTMP Drugs 0.000 description 1
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- 229910003767 Gold(III) bromide Inorganic materials 0.000 description 1
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- XUJNEKJLAYXESH-REOHCLBHSA-N L-Cysteine Chemical compound SC[C@H](N)C(O)=O XUJNEKJLAYXESH-REOHCLBHSA-N 0.000 description 1
- FFEARJCKVFRZRR-BYPYZUCNSA-N L-methionine Chemical compound CSCC[C@H](N)C(O)=O FFEARJCKVFRZRR-BYPYZUCNSA-N 0.000 description 1
- GUBGYTABKSRVRQ-QKKXKWKRSA-N Lactose Natural products OC[C@H]1O[C@@H](O[C@H]2[C@H](O)[C@@H](O)C(O)O[C@@H]2CO)[C@H](O)[C@@H](O)[C@H]1O GUBGYTABKSRVRQ-QKKXKWKRSA-N 0.000 description 1
- GUBGYTABKSRVRQ-PICCSMPSSA-N Maltose Natural products O[C@@H]1[C@@H](O)[C@H](O)[C@@H](CO)O[C@@H]1O[C@@H]1[C@@H](CO)OC(O)[C@H](O)[C@H]1O GUBGYTABKSRVRQ-PICCSMPSSA-N 0.000 description 1
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 description 1
- 229930040373 Paraformaldehyde Natural products 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- PYMYPHUHKUWMLA-LMVFSUKVSA-N Ribose Natural products OC[C@@H](O)[C@@H](O)[C@@H](O)C=O PYMYPHUHKUWMLA-LMVFSUKVSA-N 0.000 description 1
- XQJYHXQESCJSHS-UHFFFAOYSA-H S(=O)([O-])OS(=O)[O-].[Au+3].[K+].[K+].[K+].S(=O)([O-])OS(=O)[O-].S(=O)([O-])OS(=O)[O-] Chemical compound S(=O)([O-])OS(=O)[O-].[Au+3].[K+].[K+].[K+].S(=O)([O-])OS(=O)[O-].S(=O)([O-])OS(=O)[O-] XQJYHXQESCJSHS-UHFFFAOYSA-H 0.000 description 1
- BPXUZVUPCXMVMG-UHFFFAOYSA-K S(=O)([O-])OS(=O)[O-].[Au+3].[NH4+].[NH4+].[NH4+].S(=O)([O-])OS(=O)[O-].S(=O)([O-])OS(=O)[O-] Chemical compound S(=O)([O-])OS(=O)[O-].[Au+3].[NH4+].[NH4+].[NH4+].S(=O)([O-])OS(=O)[O-].S(=O)([O-])OS(=O)[O-] BPXUZVUPCXMVMG-UHFFFAOYSA-K 0.000 description 1
- PCSMJKASWLYICJ-UHFFFAOYSA-N Succinic aldehyde Chemical compound O=CCCC=O PCSMJKASWLYICJ-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- HUKGOLYOCFANQI-UHFFFAOYSA-N [2-(hydroxymethylamino)ethylamino]methanol Chemical compound OCNCCNCO HUKGOLYOCFANQI-UHFFFAOYSA-N 0.000 description 1
- VYVFRCHFRAPULL-UHFFFAOYSA-N [B].[P].[W].[Co] Chemical compound [B].[P].[W].[Co] VYVFRCHFRAPULL-UHFFFAOYSA-N 0.000 description 1
- KKHIHNTVAHVSQO-UHFFFAOYSA-N [P].[B].[Mo].[Co] Chemical compound [P].[B].[Mo].[Co] KKHIHNTVAHVSQO-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- IKHGUXGNUITLKF-XPULMUKRSA-N acetaldehyde Chemical compound [14CH]([14CH3])=O IKHGUXGNUITLKF-XPULMUKRSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- HMFHBZSHGGEWLO-UHFFFAOYSA-N alpha-D-Furanose-Ribose Natural products OCC1OC(O)C(O)C1O HMFHBZSHGGEWLO-UHFFFAOYSA-N 0.000 description 1
- WQZGKKKJIJFFOK-PHYPRBDBSA-N alpha-D-galactose Chemical compound OC[C@H]1O[C@H](O)[C@H](O)[C@@H](O)[C@H]1O WQZGKKKJIJFFOK-PHYPRBDBSA-N 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000007854 aminals Chemical class 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 239000012736 aqueous medium Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- LJJNEPKMBSUEND-UHFFFAOYSA-O azanium;gold;cyanide Chemical compound [NH4+].[Au].N#[C-] LJJNEPKMBSUEND-UHFFFAOYSA-O 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 description 1
- GUBGYTABKSRVRQ-QUYVBRFLSA-N beta-maltose Chemical compound OC[C@H]1O[C@H](O[C@H]2[C@H](O)[C@@H](O)[C@H](O)O[C@@H]2CO)[C@H](O)[C@@H](O)[C@@H]1O GUBGYTABKSRVRQ-QUYVBRFLSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- QDWJUBJKEHXSMT-UHFFFAOYSA-N boranylidynenickel Chemical compound [Ni]#B QDWJUBJKEHXSMT-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- KXZJHVJKXJLBKO-UHFFFAOYSA-N chembl1408157 Chemical compound N=1C2=CC=CC=C2C(C(=O)O)=CC=1C1=CC=C(O)C=C1 KXZJHVJKXJLBKO-UHFFFAOYSA-N 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- JNGZXGGOCLZBFB-IVCQMTBJSA-N compound E Chemical compound N([C@@H](C)C(=O)N[C@@H]1C(N(C)C2=CC=CC=C2C(C=2C=CC=CC=2)=N1)=O)C(=O)CC1=CC(F)=CC(F)=C1 JNGZXGGOCLZBFB-IVCQMTBJSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- MLUCVPSAIODCQM-NSCUHMNNSA-N crotonaldehyde Chemical compound C\C=C\C=O MLUCVPSAIODCQM-NSCUHMNNSA-N 0.000 description 1
- MLUCVPSAIODCQM-UHFFFAOYSA-N crotonaldehyde Natural products CC=CC=O MLUCVPSAIODCQM-UHFFFAOYSA-N 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- XUJNEKJLAYXESH-UHFFFAOYSA-N cysteine Natural products SCC(N)C(O)=O XUJNEKJLAYXESH-UHFFFAOYSA-N 0.000 description 1
- 235000018417 cysteine Nutrition 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 229960005215 dichloroacetic acid Drugs 0.000 description 1
- ADPOBOOHCUVXGO-UHFFFAOYSA-H dioxido-oxo-sulfanylidene-$l^{6}-sulfane;gold(3+) Chemical compound [Au+3].[Au+3].[O-]S([O-])(=O)=S.[O-]S([O-])(=O)=S.[O-]S([O-])(=O)=S ADPOBOOHCUVXGO-UHFFFAOYSA-H 0.000 description 1
- WBZKQQHYRPRKNJ-UHFFFAOYSA-L disulfite Chemical compound [O-]S(=O)S([O-])(=O)=O WBZKQQHYRPRKNJ-UHFFFAOYSA-L 0.000 description 1
- DUYCTCQXNHFCSJ-UHFFFAOYSA-N dtpmp Chemical compound OP(=O)(O)CN(CP(O)(O)=O)CCN(CP(O)(=O)O)CCN(CP(O)(O)=O)CP(O)(O)=O DUYCTCQXNHFCSJ-UHFFFAOYSA-N 0.000 description 1
- 238000000454 electroless metal deposition Methods 0.000 description 1
- 150000002081 enamines Chemical class 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- UYMKPFRHYYNDTL-UHFFFAOYSA-N ethenamine Chemical class NC=C UYMKPFRHYYNDTL-UHFFFAOYSA-N 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 229930182830 galactose Natural products 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000174 gluconic acid Substances 0.000 description 1
- 235000012208 gluconic acid Nutrition 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- 229940015043 glyoxal Drugs 0.000 description 1
- 150000002344 gold compounds Chemical class 0.000 description 1
- FDWREHZXQUYJFJ-UHFFFAOYSA-M gold monochloride Chemical compound [Cl-].[Au+] FDWREHZXQUYJFJ-UHFFFAOYSA-M 0.000 description 1
- OVWPJGBVJCTEBJ-UHFFFAOYSA-K gold tribromide Chemical compound Br[Au](Br)Br OVWPJGBVJCTEBJ-UHFFFAOYSA-K 0.000 description 1
- IZLAVFWQHMDDGK-UHFFFAOYSA-N gold(1+);cyanide Chemical group [Au+].N#[C-] IZLAVFWQHMDDGK-UHFFFAOYSA-N 0.000 description 1
- OIZJPMOIAMYNJL-UHFFFAOYSA-H gold(3+);trisulfate Chemical compound [Au+3].[Au+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O OIZJPMOIAMYNJL-UHFFFAOYSA-H 0.000 description 1
- PDMYFWLNGXIKEP-UHFFFAOYSA-K gold(3+);trithiocyanate Chemical compound [Au+3].[S-]C#N.[S-]C#N.[S-]C#N PDMYFWLNGXIKEP-UHFFFAOYSA-K 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 235000010299 hexamethylene tetramine Nutrition 0.000 description 1
- VKYKSIONXSXAKP-UHFFFAOYSA-N hexamethylenetetramine Chemical compound C1N(C2)CN3CN1CN2C3 VKYKSIONXSXAKP-UHFFFAOYSA-N 0.000 description 1
- IWCAQTQMDRGMPI-UHFFFAOYSA-N hexane-3,4-diamine Chemical compound CCC(N)C(N)CC IWCAQTQMDRGMPI-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 239000008101 lactose Substances 0.000 description 1
- OVWYEQOVUDKZNU-UHFFFAOYSA-N m-tolualdehyde Chemical compound CC1=CC=CC(C=O)=C1 OVWYEQOVUDKZNU-UHFFFAOYSA-N 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229930182817 methionine Natural products 0.000 description 1
- UDGSVBYJWHOHNN-UHFFFAOYSA-N n',n'-diethylethane-1,2-diamine Chemical compound CCN(CC)CCN UDGSVBYJWHOHNN-UHFFFAOYSA-N 0.000 description 1
- DMDXQHYISPCTGF-UHFFFAOYSA-N n',n'-dipropylethane-1,2-diamine Chemical compound CCCN(CCC)CCN DMDXQHYISPCTGF-UHFFFAOYSA-N 0.000 description 1
- VCUPOEDTGSOKCM-UHFFFAOYSA-N n,n'-dihexylethane-1,2-diamine Chemical compound CCCCCCNCCNCCCCCC VCUPOEDTGSOKCM-UHFFFAOYSA-N 0.000 description 1
- KGHYGBGIWLNFAV-UHFFFAOYSA-N n,n'-ditert-butylethane-1,2-diamine Chemical compound CC(C)(C)NCCNC(C)(C)C KGHYGBGIWLNFAV-UHFFFAOYSA-N 0.000 description 1
- 229910001453 nickel ion Inorganic materials 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- BTFQKIATRPGRBS-UHFFFAOYSA-N o-tolualdehyde Chemical compound CC1=CC=CC=C1C=O BTFQKIATRPGRBS-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- MOOYVEVEDVVKGD-UHFFFAOYSA-N oxaldehydic acid;hydrate Chemical compound O.OC(=O)C=O MOOYVEVEDVVKGD-UHFFFAOYSA-N 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- FXLOVSHXALFLKQ-UHFFFAOYSA-N p-tolualdehyde Chemical compound CC1=CC=C(C=O)C=C1 FXLOVSHXALFLKQ-UHFFFAOYSA-N 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- QNGNSVIICDLXHT-UHFFFAOYSA-N para-ethylbenzaldehyde Natural products CCC1=CC=C(C=O)C=C1 QNGNSVIICDLXHT-UHFFFAOYSA-N 0.000 description 1
- 229920002866 paraformaldehyde Polymers 0.000 description 1
- 229940100595 phenylacetaldehyde Drugs 0.000 description 1
- SIBIBHIFKSKVRR-UHFFFAOYSA-N phosphanylidynecobalt Chemical compound [Co]#P SIBIBHIFKSKVRR-UHFFFAOYSA-N 0.000 description 1
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- NNFCIKHAZHQZJG-UHFFFAOYSA-N potassium cyanide Chemical compound [K+].N#[C-] NNFCIKHAZHQZJG-UHFFFAOYSA-N 0.000 description 1
- XTFKWYDMKGAZKK-UHFFFAOYSA-N potassium;gold(1+);dicyanide Chemical compound [K+].[Au+].N#[C-].N#[C-] XTFKWYDMKGAZKK-UHFFFAOYSA-N 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- LVTJOONKWUXEFR-FZRMHRINSA-N protoneodioscin Natural products O(C[C@@H](CC[C@]1(O)[C@H](C)[C@@H]2[C@]3(C)[C@H]([C@H]4[C@@H]([C@]5(C)C(=CC4)C[C@@H](O[C@@H]4[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@@H](O)[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@H](CO)O4)CC5)CC3)C[C@@H]2O1)C)[C@H]1[C@H](O)[C@H](O)[C@H](O)[C@@H](CO)O1 LVTJOONKWUXEFR-FZRMHRINSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- SMQUZDBALVYZAC-UHFFFAOYSA-N salicylaldehyde Chemical compound OC1=CC=CC=C1C=O SMQUZDBALVYZAC-UHFFFAOYSA-N 0.000 description 1
- 150000003335 secondary amines Chemical group 0.000 description 1
- 125000000467 secondary amino group Chemical group [H]N([*:1])[*:2] 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 235000002639 sodium chloride Nutrition 0.000 description 1
- SDKPSXWGRWWLKR-UHFFFAOYSA-M sodium;9,10-dioxoanthracene-1-sulfonate Chemical compound [Na+].O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2S(=O)(=O)[O-] SDKPSXWGRWWLKR-UHFFFAOYSA-M 0.000 description 1
- VMDSWYDTKFSTQH-UHFFFAOYSA-N sodium;gold(1+);dicyanide Chemical compound [Na+].[Au+].N#[C-].N#[C-] VMDSWYDTKFSTQH-UHFFFAOYSA-N 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000013112 stability test Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 150000003512 tertiary amines Chemical group 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- DHCDFWKWKRSZHF-UHFFFAOYSA-L thiosulfate(2-) Chemical compound [O-]S([S-])(=O)=O DHCDFWKWKRSZHF-UHFFFAOYSA-L 0.000 description 1
- AAGLRRWDTGMXSD-UHFFFAOYSA-H trisodium gold(3+) sulfinato sulfite Chemical compound S(=O)([O-])OS(=O)[O-].[Na+].[Na+].[Na+].[Au+3].S(=O)([O-])OS(=O)[O-].S(=O)([O-])OS(=O)[O-] AAGLRRWDTGMXSD-UHFFFAOYSA-H 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- DGVVWUTYPXICAM-UHFFFAOYSA-N β‐Mercaptoethanol Chemical compound OCCS DGVVWUTYPXICAM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/42—Coating with noble metals
- C23C18/44—Coating with noble metals using reducing agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1635—Composition of the substrate
- C23C18/1637—Composition of the substrate metallic substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
- C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
- C23C18/1837—Multistep pretreatment
- C23C18/1844—Multistep pretreatment with use of organic or inorganic compounds other than metals, first
Abstract
The present invention relates to plating bath compositions for electroless gold plating and methods of depositing gold layers. In particular, the present invention relates to an aqueous electroless gold plating bath comprising at least one source of gold ions and at least one reducing agent for the gold ions, characterized in that the aqueous electroless gold plating bath comprises at least one ethylenediamine derivative of formula (I) as plating enhancer compound, wherein the residue R 1 And R is 2 Containing 2 to 12 carbon atoms and selected from branched alkyl, unbranched alkyl, cycloalkyl, or a combination thereof, each of whichResidue R 1 And R is 2 The same or different. The aqueous electroless gold plating bath is suitable for providing a soft gold layer that can be used in wire bonding and soldering applications required for electronic components.
Description
The present patent application is a divisional application of the invention patent application with international application number PCT/EP2016/072053, international application date of 2016, 9/16, application number 201680052427.3 entering the national stage of china, entitled "plating bath composition for electroless gold plating and method of depositing gold layer".
Technical Field
The present invention relates to plating bath compositions for electroless gold plating and methods of depositing gold layers. In particular, the present invention relates to an aqueous electroless gold plating bath composition for electroless gold layer plating onto a substrate and a method of depositing gold. The plating bath is particularly suitable for the manufacture of printed circuit boards, IC substrates, semiconductor devices, interposers (interposers) made of glass, and the like.
Background
Gold layers are of greatest interest in the electronic component manufacturing and semiconductor industry. Gold layers are often used as solderable and/or wirebondable surfaces in the manufacture of printed circuit boards, IC substrates, semiconductor devices, and the like. Typically, they are used as a final surface treatment (finish) prior to bonding and wire bonding. In order to provide an electrical connection between a copper wire and a wire bonded thereto that has sufficient electrical conductivity and robustness while providing good strength for wire bonding, there are a variety of layer assemblies conventionally used in the art. Among these are electroless nickel electroless gold (ENIG), electroless Nickel Electroless Palladium Immersion Gold (ENEPIG), direct Immersion Gold (DIG), electroless palladium immersion gold (epid), and Electroless Palladium Autocatalytic Gold (EPAG). Although these techniques have been established for some time, many challenges remain unresolved. Such challenges are corrosion of the nickel layer placed between the gold and copper wire (nickel corrosion) and insufficient stability of the gold plating bath, which is highly undesirable due to the cost of the plating bath. Also, it is highly desirable to deposit a gold layer at a plating rate sufficient to run the manufacturing process economically. Another desirable property of the gold layer is that the optical appearance should be lemon yellow, as discoloration of the gold layer is unacceptable.
Due to the small size of current electronic components, it is not possible to use electrolytic processes that require electrical connection to a substrate. Thus, an electroless metal deposition process (electroless plating) is used. Electroless plating generally describes a method of reducing metal ions without using an external current source. Plating processes using external current sources are generally described as electrolytic plating or galvanic plating methods. The nonmetallic surfaces may be pretreated to render them receptive to or catalyze the metal deposition. All or selected portions of the surface may be suitably pretreated. The main components of the electroless metal bath are metal salts, reducing agents and, as optional ingredients, complexing agents, pH adjusting agents and additives such as stabilizers. Complexing agents (also known in the art as chelating agents) are used to chelate the metal to be deposited and prevent the metal from precipitating from the solution (i.e., as a hydroxide, etc.). The chelating metal renders the metal available for use by a reducing agent that converts the metal ions into a metallic form.
Another form of metal deposition is dip plating. Dip plating is another metal deposition that uses neither an external current source nor a chemical reducing agent. The mechanism relies on the substitution of metal from the underlying substrate with metal ions present in the immersion plating solution. This is a significant disadvantage of dip plating because depositing thicker layers is often limited by the porosity of the layers.
In most cases, electroless gold plating baths use one or two types of electroless plating. Immersion plating may occur even if a reducing agent has been added to the plating bath, although the proportion is significantly reduced.
Electroless plating in the context of the present invention is to be understood as (mainly) autocatalytic deposition by means of a chemical reducing agent (herein referred to as "reducing agent").
US 2012/019005 A1 discloses an electroless gold plating bath comprising a water-soluble gold compound and an alkylene diamine, a dialkylene triamine, and the like. However, such gold plating solutions lack sufficient stability and plating rate and are therefore unsuitable for use in industrial processes (see example 4).
US 2008/0138807 A1 reports the use of aldehyde compounds as reducing agents and N-substituted ethylenediamine derivatives such as N 1 ,N 2 -dimethylethylenediamine and N 1 ,N 2 Electroless gold plating bath of bis- (hydroxymethyl) ethylenediamine. However, the plating bath described therein still lacks plating rate and stability (see example 4). In order to meet the current industry requirements, it is often sufficient that the gold plating bath has a plating rate of 150nm/h or more, preferably 200nm/h or more or desirably 250nm/h or more.
Object of the Invention
It is an object of the present invention to provide an aqueous electroless gold plating bath composition from which a gold layer can be deposited at a sufficient plating rate and a method for the purpose. It is another object of the present invention to provide an aqueous electroless gold plating bath that has sufficient stability and can be used for a long period of time.
Yet another object is that the gold layer formed does not exhibit discoloration.
Disclosure of Invention
These objects are solved by the aqueous electroless gold plating bath according to the invention, which comprises at least one source of gold ions and at least one reducing agent for the gold ions, and which is characterized in that the plating bath comprises at least one ethylenediamine derivative of formula (I) as plating enhancer compound
Wherein residue R 1 And R is 2 Containing 2 to 12 carbon atoms and selected from branched alkyl, unbranched alkyl, cycloalkyl or a combination thereof, wherein each residue R 1 And R is 2 The same or different.
These objects are additionally solved by a method for depositing a gold layer from the above-mentioned plating bath and the use of the above-mentioned plating enhancer compound in a gold plating bath comprising at least one source of gold ions and at least one reducing agent for gold ions.
Drawings
Fig. 1 shows a test substrate having a number of copper pads to be plated thereon. Also depicted are 10 different points (circles labeled 1 through 10) of measured layer thickness.
Detailed Description
The ethylenediamine derivatives of formula (I) will be referred to herein as plating enhancer compounds.
Plating enhancer compounds of formula (I)
With residue R 1 And R is 2 Comprising 2 to 12 carbon atoms and selected from branched alkyl, unbranched alkyl, cycloalkyl or a combination thereof, wherein each residue R 1 And R is 2 The same or different.
The amine moiety in the plating enhancer compound of formula (I) is a secondary amine moiety. The inventors found that R 1 And R is 2 The corresponding diamine, or derivative thereof, which is a methyl residue, does not allow for sufficient plating rates nor for a gold plating bath to be sufficiently stable (see example 4).
In a preferred embodiment of the present invention, residue R of the plating enhancer compound of formula (I) 1 And R is 2 Containing 2 to 8 carbon atoms, more preferably 2 to 6 carbon atoms, even more preferably 2 to 4 carbon atoms.
In another preferred embodiment of the present inventionResidues R in formula (I) 1 And R is 2 Are identical. In a further preferred embodiment of the invention, the alkyl residue R in formula (I) 1 And R is 2 No terminal hydroxyl moiety (-OH) was contained, as the inventors found that the terminal hydroxyl moiety bound thereto is detrimental to the stability of the plating bath (see example 4). In a further preferred embodiment of the invention, the residue R in formula (I) 1 And R is 2 No terminal primary amino moiety is contained, as the inventors found that the terminal amino moiety bound thereto is also detrimental to the stability of the plating bath (see example 4). In another more preferred embodiment of the invention, residue R 1 And R is 2 Without any additional amino moieties and/or any hydroxyl moieties. Even more preferably the alkyl residue is free of substituents and consists of carbon and hydrogen atoms only.
It is particularly preferred to select the plating enhancer compound from the following options: n (N) 1 ,N 2 -diethyl ethane-1, 2-diamine, N 1 ,N 2 -dipropylethane-1, 2-diamine, N 1 ,N 2 -di-isopropyl ethane-1, 2-diamine, N 1 ,N 2 -dibutyl ethane-1, 2-diamine, N 1 ,N 2 -di-iso-butylethane-1, 2-diamine, N 1 ,N 2 -di-tert-butylethane-1, 2-diamine, N 1 ,N 2 Dipentylethane-1, 2-diamine, N 1 ,N 2 -di-iso-amyl ethane-1, 2-diamine, N 1 ,N 2 -di-sec-amyl ethane-1, 2-diamine, N 1 ,N 2 -di-tert-amyl ethane-1, 2-diamine, N 1 ,N 2 -di-neopentyl ethane-1, 2-diamine, N 1 ,N 2 Dihexylethane-1, 2-diamine, N 1 ,N 2 -di- (1-methylpentyl) ethane-1, 2-diamine, N 1 ,N 2 -di- (2-methylpentyl) ethane-1, 2-diamine, N 1 ,N 2 -di- (3-methylpentyl) ethane-1, 2-diamine, N 1 ,N 2 -di- (4-methylpentyl) ethane-1, 2-diamine, N 1 ,N 2 -di- (1, 1-dimethylbutyl) ethane-1, 2-diamine, N 1 ,N 2 -di- (1, 2-dimethylbutyl) ethane-1, 2-diamine, N 1 ,N 2 -di- (1, 3-di)Methyl butyl) ethane-1, 2-diamine, N 1 ,N 2 -di- (2, 2-dimethylbutyl) ethane-1, 2-diamine, N 1 ,N 2 -di- (2, 3-dimethylbutyl) ethane-1, 2-diamine and N 1 ,N 2 -di- (3, 3-dimethylbutyl) ethane-1, 2-diamine.
Most preferably R 1 And R is 2 Is a branched alkyl residue having 3 to 6 carbon atoms. Surprisingly, it has been found that when branched alkyl residues having 3 to 6 carbon atoms are used as R 1 And R is 2 When a combination of a high plating rate with an even more improved bath stability is obtained (see example 5).
In the aqueous electroless gold plating bath according to the invention, the concentration of the at least one plating enhancer compound of formula (I) preferably ranges from 0.001 to 1mol/L, more preferably from 10 to 100mmol/L, even more preferably from 25 to 75mmol/L. If more than one plating enhancer compound is contained in the aqueous electroless gold plating bath of the invention, the concentration is based on the total mass of all plating enhancer compounds.
The synonymous designation of the aqueous electroless gold plating bath of the invention is an aqueous solution. The term "aqueous solution" means that the primary liquid medium in solution as a solvent is water. Other liquids that are miscible with water, such as alcohols, and other polar organic liquids that are miscible with water, may be added. In principle, the aqueous solution comprises more than 50% by weight of water.
The electroless plating bath of the invention may be prepared by dissolving all components in an aqueous liquid medium, preferably water.
The aqueous electroless gold plating bath of the invention comprises at least one source of gold ions. The gold ion may be in Au + 、Au 3+ Or both oxidation states. The source of gold ions may be any water-soluble gold salt having the oxidation state. Preferably, the gold ion source is selected from gold cyanide, gold ammonium cyanide, gold (I) alkali metal cyanide, including gold (I) potassium cyanide, gold (I) sodium cyanide, trisodium gold disulfite, tripotassium gold disulfite and triammonium gold disulfite, gold thiosulfate, gold thiocyanate, gold sulfate, gold chloride, and gold bromide. Preferably, the gold ion source is gold (I) alkali metal cyanide and is capable ofAdded to the aqueous plating bath in the form of a solution containing the salt. The preferred range of gold ion concentration in the aqueous electroless gold plating bath of the invention is 0.1 to 10g/L, more preferably 0.3 to 6g/L.
The aqueous electroless gold plating bath further comprises at least one reducing agent for gold ions. The reducing agent for gold ions is preferably selected from aliphatic aldehydes such as formaldehyde, acetaldehyde, propionaldehyde, n-butyraldehyde, α -methylpentanal, β -methylpentanal, γ -methylpentanal, etc.; aliphatic dialdehydes such as glyoxal, succinaldehyde, and the like; aliphatic unsaturated aldehydes such as crotonaldehyde and the like; aromatic aldehydes such as benzaldehyde, o-nitrobenzaldehyde, m-nitrobenzaldehyde, p-nitrobenzaldehyde, o-tolualdehyde, m-tolualdehyde, p-tolualdehyde, o-hydroxybenzaldehyde, m-hydroxybenzaldehyde, p-hydroxybenzaldehyde, phenylacetaldehyde and the like; sugars having aldehyde groups (-CHO), such as glucose, galactose, mannose, ribose, maltose, lactose, and the like; and precursors of formaldehyde such as urotropin, 1, 3-bis (hydroxymethyl) -5, 5-dimethylimidazolidine-2, 4-dione (DMDM-hydantoin), paraformaldehyde, glyoxylic acid, sources of glyoxylic acid, and glycolic acid. The term "source of glyoxylic acid" includes glyoxylic acid and all compounds which can be converted to glyoxylic acid in aqueous solution. In aqueous solution, the aldehyde-containing acid is in equilibrium with its hydrate. A suitable source of glyoxylic acid is a dihaloacetic acid, such as dichloroacetic acid, which will hydrolyze in an aqueous medium to the glyoxylic acid hydrate. An alternative source of glyoxylic acid is the bisulfite adduct, but also hydrolyzable esters or other acid derivatives. The bisulfite adduct may be added to the aqueous electroless gold plating bath of the invention or formed in situ. The bisulfite adducts may be made from glyoxylate and any of bisulfite, sulfite, or metabisulfite. Formaldehyde, a source of glyoxylate and glyoxylate are preferred, most preferred is formaldehyde.
The concentration of the at least one reducing agent for gold ions is preferably in the range of 0.0001 to 0.5mol/L, more preferably 0.001 to 0.3mol/L, even more preferably 0.005 to 0.12mol/L.
Without being bound by theory, the inventors have discovered a significant inventive technique, namely, the reaction product of a specific ethyleneamine derivative, such as triethylenetetramine, and a reducing agent for gold ions, such as formaldehyde (or its oxidation product formic acid), with the consequence of causing precipitation and reducing plating rates. Typical reaction products are, for example, the corresponding aminal, enamine and amide derivatives. Thus, the extent of the possibility of unwanted reaction product formation is preferably limited by selecting the molar ratio of the plating enhancer compound of formula (I) to the reducing agent for gold ions in the aqueous electroless gold plating bath of the invention to a range of 0.5 to 9, preferably 0.8 to 3.0, more preferably 1.0 to 2.0 (see example 6). If more than one plating enhancer compound of formula (I) and/or more than one reducing agent for gold ions are used in the aqueous electroless gold plating bath of the invention, this ratio is calculated based on the total mass of all corresponding individual compounds.
The aqueous electroless gold plating bath of the invention optionally further comprises at least one complexing agent. The optional at least one complexing agent present in the aqueous electroless gold plating bath of the invention is preferably selected from carboxylic acids, hydroxycarboxylic acids, aminocarboxylic acids, aminophosphonic acids, or salts of the foregoing. The optional at least one complexing agent acts as a complexing agent for gold ions as well as for metal ions, such as nickel ions or copper ions, dissolved from the substrate during plating. Preferred carboxylic acids are for example oxalic acid or salts thereof. Preferred hydroxycarboxylic acids are, for example, tartaric acid, citric acid, lactic acid, malic acid, gluconic acid and salts of the foregoing. Preferred aminocarboxylic acids are, for example, glycine, cysteine, methionine and salts of the foregoing. Preferred aminophosphonic acids are nitrilotris (methylphosphonic acid) (commonly abbreviated as ATMP), diethylenetriamine penta (methylphosphonic acid) (commonly abbreviated as DTPMP) and ethylenediamine tetra (methylenephosphonic acid) (commonly abbreviated as EDTMP). In all cases, sodium, potassium and ammonium salts of the compounds are also suitable. The concentration of the optional at least one complexing agent preferably ranges from 0.1 to 50g/L, more preferably from 0.5 to 30g/L.
More preferably, the aqueous electroless gold plating bath of the invention comprises two different complexing agents and/or salts thereof, for example a hydroxycarboxylic acid or salt thereof and an aminocarboxylic acid or salt thereof.
The aqueous electroless gold plating bath of the invention optionally comprises a crystal modifier selected from thallium ions, arsenic ions, selenium ions, and lead ions. Such a crystal modifier is preferably added to the aqueous electroless gold plating bath of the invention in a concentration range of 0.00001 to 0.1 g/L. Useful sources of the ions may be their water-soluble salts, such as the corresponding nitrates, sulfates and halides.
The aqueous electroless gold plating bath of the invention optionally comprises at least one stabilizer selected from the group consisting of cyanide ion sources, hydantoins and alkyl derivatives thereof such as alkyl hydantoins and dialkyl hydantoins, wherein the alkyl residues herein include C 1 To C 8 Alkyl (preferably methyl) which may be cyclic and/or alicyclic, branched or unbranched, sulfur compounds such as 2-mercaptobenzothiazole, 2-mercaptobenzimidazole, mercaptoacetic acid, 3- (2-benzothiazolylthio) -1-propanesulfonic acid, mercaptosuccinic acid, thiosulfate, thioglycol, thiourea, thiomalic acid and the like, and aromatic nitrogen compounds such as benzotriazole, 1,2, 4-aminotriazole and the like. Suitable sources of cyanide ions may be any soluble cyanide salt, such as alkali metal cyanide including sodium cyanide, potassium cyanide.
The concentration of the optional stabilizer may be selected according to its chemical structure and may be determined by anyone with routine experimentation as known in the art. The concentration of the optional stabilizer is preferably in the range of 0.0000001 to 0.2mol/L, more preferably 0.000001 to 0.1mol/L. Such stabilizers are routinely added to electroless gold plating baths to improve their service life and prevent precipitation.
In a preferred embodiment, two or more stabilizers are used. More preferably, a source of cyanide ions in a concentration of 0.0003 to 5mmol/L and one or more hydantoins and alkyl derivatives thereof in a concentration of 10 to 100mmol/L and/or sulfur compounds in a concentration of 0.000001 to 0.05mol/L are selected.
In another preferred embodiment of the invention, the aqueous electroless gold plating bath of the invention is free of an intentionally added second source of reducible metal ions (usually present in the technical raw materials, excluding trace impurities) so that a pure gold deposit is formed. The pure gold deposit is soft and ductile and is particularly suitable for wire bonding and soldering. Trace amounts of impurities are understood to mean that the compound is present in the technical feedstock at 1% by weight or less.
The preferred range of pH of the aqueous electroless gold plating bath of the invention is 5 to 9, more preferably 6 to 8, even more preferably 6.5 to 7.5. The target pH is adjusted by using, for example, an acid such as phosphoric acid or a base such as sodium hydroxide or potassium hydroxide. Continuous control and adjustment of the pH during plating is advantageous and therefore preferred, as this also improves plating bath life.
Ethylenediamine derivatives of formula (I)
With residue R 1 And R is 2 The residues comprise 2 to 12 carbon atoms and are selected from branched alkyl, unbranched alkyl, cycloalkyl or a combination thereof, wherein each residue R 1 And R is 2 The ethylenediamine derivatives of formula (I), either identical or different, are used in aqueous gold plating baths to adjust the plating rate and improve its stability. Such aqueous gold plating baths may be electroless gold plating baths, including immersion type gold plating baths, autocatalytic gold plating baths, and gold plating baths using a mixture of autocatalytic and immersion type plating, as well as electrolytic plating baths.
Preferably, the plating enhancer compound is used in an electroless plating bath, which preferably comprises at least one source of gold ions and at least one reducing agent for gold ions.
A method of depositing a gold layer onto a substrate, the method comprising the steps of, in order
(i) Providing a substrate;
(ii) Contacting at least a portion of the surface of the substrate with the aqueous Jin Duyu of the invention described above;
and thereby depositing a gold layer on at least a portion of the surface of the substrate.
Such contact is preferably achieved by immersing the substrate or the at least part of the surface of the substrate in the plating bath or by spraying the plating bath onto the substrate or onto the at least part of the surface of the substrate.
The at least a portion of the surface of the substrate is preferably composed of a metal or metal alloy, and then gold is deposited on the at least a portion of the surface of the substrate composed of a metal or metal alloy selected from nickel, nickel alloys, such as nickel-phosphorus alloys, nickel-boron alloys, cobalt, cobalt alloys, such as cobalt phosphorus alloys, cobalt molybdenum boron phosphorus alloys, cobalt tungsten boron phosphorus alloys, palladium alloys, such as palladium phosphorus alloys, palladium boron alloys, copper and copper alloys, and gold or gold alloys. The aqueous electroless gold plating bath of the invention can be used to deposit a gold layer on a gold substrate and can be used to thicken an existing gold layer, for example, obtained from an immersion gold plating bath.
The substrate may be pretreated prior to plating, as is known in the art. Such pretreatment includes a cleaning step with solvents and/or surfactants to remove most of the organic contaminants, an etching step with acids and optionally oxidizing or reducing agents to remove oxides, and an activation step. The latter is to deposit noble metals on the surface or a portion thereof to make it more receptive to plating. Such noble metal may be palladium, which may be deposited as a salt, which is then reduced to elemental palladium on the surface. Or it may be deposited in colloidal form and-where appropriate-an acceleration step with an acid such as hydrochloric acid to remove any protective colloids such as tin colloids. Such an activation layer is typically not a discrete layer, but rather an aggregation of palladium in an island-like structure. However, in the context of the present invention, the active layer is considered to be a metal substrate.
The temperature of the aqueous electroless gold plating bath of the invention is preferably in the range of 30 to 95 ℃, more preferably 70 to 90 ℃, even more preferably 75 to 85 ℃, still even more preferably 77 to 84 ℃ during plating. The plating time is preferably in the range of 1 to 60 minutes, more preferably in the range of 5 to 30 minutes. However, if thinner or thicker deposits are desired, the plating time can be outside the above ranges and adjusted accordingly.
The components used during plating are preferably replenished continuously or at specific intervals. Such components are in particular the gold ion source, the reducing agent for gold ions, the at least one stabilizer and the plating enhancer compound. The pH can also be adjusted continuously or at intervals, if necessary.
The aqueous electroless gold plating bath of the invention can be used in horizontal plating equipment, vertical plating equipment, and plating equipment.
An advantage of the present invention is the improved stability of the aqueous electroless gold plating bath of the invention compared to Jin Duyu (see example 5) known in the art. Stability is herein understood to be the life of the plating bath before the compounds precipitate ("educt") from the bath to render the plating bath useless for plating purposes.
Another advantage is that the aqueous gold plating bath of the present invention allows for a sufficient plating rate (deposit thickness of the plated metal layer over time) of 250nm/h or more (see examples 1 to 3 and 5). Most of the slightly stable plating baths known in the prior art are not capable of achieving a sufficient plating rate.
Thus, a unique feature of the aqueous electroless gold plating bath of the invention is to provide a highly stable gold plating bath with sufficient plating rate to enable a more economically viable gold plating process.
The aqueous gold plating bath according to the invention forms a uniform gold deposit with very small layer thickness deviations. The standard deviation of the gold layer thickness is below 10% or even below 8%. Such small deviations can be advantageously achieved even when plating on a variety of substrates having different dimensions.
The following non-limiting examples further illustrate the invention.
Examples
General procedure
CLN、/>ME、/>Pre Dip、/>Aktivator and +.>ACT V3 STD is a product available from Atotech Deutschland GmbH (etot de national company). The gold ion source is K [ Au (CN) in each case 2 ]。
In all experiments were used with many having 0.25 to 49mm on both sides 2 A range of copper pad printed circuit test boards of different sizes were used as substrates. They are cleaned and etched prior to activation with palladium. Palladium is then deposited on the copper surface and then a gold layer is plated thereon. Different shims at the measured layer thickness are shown in fig. 1. Each shim has the following areas: 1:0.25mm 2 ,2:0.52mm 2 ,3:0.68mm 2 ,4:0.97mm 2 ,5:1.33mm 2 ,6:1.35mm 2 ,7:3.3mm 2 ,8:6.7mm 2 ,9:25mm 2 ,10:49mm 2 。
Determination of thickness of metal deposit and plating rate
Deposit thickness was measured at 10 copper shims on each side of the test plate. The copper shims were chosen to have different dimensions and were used to determine layer thickness by XRF using an XRF instrument fischer recipe XDV-SDD (Helmut Fischer GmbH (hermote fischer, germany). By assuming a layered structure of the deposit, the layer thickness can be calculated from such XRF data. The plating rate is calculated by dividing the resulting layer thickness by the time required to obtain the layer thickness.
Layer thickness uniformity was determined as standard deviation of the average thickness value.
Example 1 (invention):N 1 ,N 2 diisopropylethane-1, 2-diamine as plating enhancer compound
Jin Duyu containing the following components was prepared by dissolving all the components in water:
the substrate was subjected to the following treatment steps (table 1) by immersing the substrate in each solution with the given parameters:
table 1: process steps for gold plating
After this process step, the thickness of each metal layer is measured. Plating rates were calculated as described above.
Table 2: containing N 1 ,N 2 Layer thickness and plating rate of gold plating bath of diisopropylethane-1, 2-diamine
Layer thickness | Standard deviation of | Plating rate | |
Palladium layer | 74nm | 444nm/h | |
Gold layer | 103nm | 5.6% | 309nm/h |
The gold layer is lemon yellow. Moreover, the plating rate is very high, well above the desired minimum of 250 nm/h. The layer thickness distribution is also very uniform with a deviation of only 5.6%.
1 2 Example 2 (invention): n, N-dipropylethane-1, 2-diamine as plating enhancer compound
The process described in example 1 was repeated with a gold plating bath containing 50mmol/L N 1 ,N 2 -dipropylethane-1, 2-diamine instead of 50mmol/L N 1 ,N 2 -diisopropylethane-1, 2-diamine. The results are summarized in the following table:
table 3: containing N 1 ,N 2 Layer thickness and plating rate of gold plating bath of dipropylethane-1, 2-diamine
Layer thickness | Standard deviation of | Plating rate | |
Palladium layer | 82nm | 492nm/h | |
Gold layer | 101nm | 6.6% | 303nm/h |
The gold layer is lemon yellow. Moreover, the plating rate is very high, above the desired minimum of 250 nm/h. The layer thickness distribution is also very uniform with a deviation of only 6.6%.
1 2 Example 3 (invention): n, N-diethyl ethane-1, 2-diamine as plating enhancer compound
The process described in example 1 was repeated, wherein the gold plating bath contained N 1 ,N 2 -diethyl ethane-1, 2-diamine instead of N 1 ,N 2 Diisopropylethane-1, 2-diamine, but at the same concentration. The results are summarized in the following table:
table 4: containing N 1 ,N 2 Layer thickness and plating rate of gold plating bath of diethyl ethane-1, 2-diamine
Layer thickness | Standard deviation of | Plating rate | |
Palladium layer | 86nm | 516nm/h | |
Gold layer | 108nm | 6.4% | 348nm/h |
The gold layer is lemon yellow. Moreover, the plating rate is very high, clearly above the desired minimum of 250 nm/h. The layer thickness distribution is also very uniform with a deviation of only 6.4%.
Example 4 (comparative): using other amines
The process described in example 1 was repeated, wherein the gold plating bath contained other compounds as listed in Table 5 in place of N 1 ,N 2 -diisopropylethane-1, 2-diamine. The results of 20 minutes gold plating are summarized in the table:
table 5: for comparison of layer thickness and plating rate of compounds in gold plating baths
A variety of compounds containing an amino moiety were tested. In those cases where the respective plating rates were too low to meet the current industry requirements for 250nm/h plating rates, the stability test was omitted.
Compound A comprises only tertiary amine moieties and does not carry any alkyl residues R 1 And R is 2 . When the plating enhancer compound in the gold plating bath is replaced with this compound, hardly any gold plating occurs. The gold layer is also very non-uniform with a standard deviation of 58% of the layer thickness.
Compound B is an alkylene diamine derivative (having only methyl residues) comprising only primary and tertiary amino moieties. When such compounds are used in place of plating enhancer compounds in gold plating baths, gold plating is slow. The gold layer is also very non-uniform with a standard deviation of 53% of the layer thickness.
Compounds C and D are alkanolamines having only a tertiary amino moiety or only one secondary amino moiety. Gold plating is slow when these compounds are used in place of the plating enhancer compounds in the gold plating bath. The gold layer was also very heterogeneous, with a layer thickness standard deviation of 24% for compound C and 33% for compound D.
Compounds E and F do not contain any alkyl residues of sufficient length and plating is slow when these compounds are used in place of the plating enhancer compounds in gold plating baths. Compounds E and F have a similar structure to the plating enhancer compound of formula (I), but they either have no alkyl residues at all or are short. In the case of compound E, the gold layer was not uniform in thickness, the standard deviation was 14.4%, and the deviation of compound F was 6.4%.
Compound G has two terminal hydroxyl moieties. When this compound is used instead of the plating enhancer compound in the gold plating bath, the plating rate is high, but the stability of the gold plating bath is insufficient. In less than one day, the gold plating bath is irreversibly degraded and cannot be used for gold plating. The standard deviation of the gold layer thickness was 6.3%.
Compound H has two terminal primary amino moieties. When this compound is used instead of the plating enhancer compound in the gold plating bath, the plating rate is sufficiently high, but the stability of the gold plating bath is poor. Within 3 hours, the gold plating bath irreversibly deteriorated. The standard deviation of the gold layer thickness was 8.5%.
In summary, comparative compounds a to F were not able to give gold baths containing these compounds a sufficient plating rate. Plating rates are always even below 200nm/h and are therefore inadequate to meet today's industrial requirements.
The comparative compounds G and H gave adequate plating rates as additives, but the stability of the respective gold plating baths was unsatisfactory.
Example 5 (invention): stability and lifetime of gold plating baths
Gold was deposited on the substrate for a long time using the gold plating baths of examples 1 to 3. The stability of the gold plating bath and plating rate were monitored over time. If precipitation occurs, the solution is filtered and reused. During the experiment, the pH was measured daily, if necessary with KOH and/or H 3 PO 4 Adjust to 7.1. During plating, the gold ion source, the cyanide ion source and the plating are continuously supplementedApplying an enhancer compound.
Table 6 provides information regarding the stability of gold plating baths containing different plating enhancer compounds. The plating bath was inspected visually directly after construction (day 0) and on a daily basis for one week. During this test, the Jin Duyu was also used to deposit gold on the substrate daily. These results are summarized in table 7. The values given in the table are the deposit thicknesses in nanometers obtained after plating for 20 minutes.
Table 6: visual inspection Jin Duyu over time while in use
Table 7: thickness of gold layer after 20 minutes of deposition from gold plating bath containing plating enhancer compound on different days
Although in the linear plating enhancer compound N 1 ,N 2 -diethyl ethane-1, 2-diamine and N 1 ,N 2 In the case of dipropylethane-1, 2-diamine, a slight precipitation occurs, but the plating bath is still able to deposit a gold layer without any reduction in the plating rate. Branched plating enhancer compound, N 1 ,N 2 Diisopropylethane-1, 2-diamine showed no precipitation for 7 days and provided good plating rates throughout the test period. It is therefore inferred that the plating enhancer compound having a branched alkyl residue results in improved bath stability.
Example 6 (invention): ratio of plating enhancer compound to reducing agent for gold ion
Jin Duyu containing the following components was prepared by dissolving all the components in water:
jin Duyu by KOH/H 3 PO 4 The pH was adjusted to 7.1. The substrate was subjected to the treatment as described in table 1, wherein the electroless gold plating step was performed for only 10 minutes.
This process was repeated several times with different gold plating baths containing increasing amounts of plating enhancer compound while the amount of reducing agent for the gold ions was maintained at the same level. The results are provided in table 8.
Table 8: ratio of plating enhancer compound to reducing agent for gold ions.
It can be seen that the highest plating rates can be obtained if the molar ratio of plating enhancer compound to reducing agent for gold ions is between 1 or 2 to 1. As the amount of plating enhancer compound further increases, the plating rate decreases.
Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification or practice of the invention disclosed herein. It is intended that the specification and examples be considered as exemplary only, with a true scope of the invention being indicated by the following claims.
Claims (10)
1. An aqueous electroless gold plating bath comprising at least one source of gold ions and at least one reducing agent for gold ions, characterized in that the aqueous electroless gold plating bath comprises at least one ethylenediamine derivative according to formula (I) as plating enhancer compound
Wherein the residue R in formula (I) 1 And R is 2 Is a branched alkyl residue having 3 carbon atoms, wherein each residue R 1 And R is 2 The same; the at least one ion is used for gold ionsIs selected from the group consisting of aliphatic aldehydes, aliphatic dialdehydes, aliphatic unsaturated aldehydes, aromatic aldehydes, and sugars having aldehyde groups; wherein the molar ratio of the plating enhancer compound to the reducing agent according to formula (I) is from 1.0 to 2.0.
2. The aqueous electroless gold plating bath according to claim 1, characterized in that the residue R in formula (I) 1 And R is 2 Without any additional amino moieties and/or any hydroxyl moieties.
3. The aqueous electroless gold plating bath according to claim 1 or 2, characterized in that the concentration of the at least one plating enhancer compound according to formula (I) ranges from 0.001 to 1mol/L.
4. An aqueous electroless gold plating bath according to claim 3, characterized in that the concentration of the at least one plating enhancer compound according to formula (I) ranges from 10mmol/L to 100mmol/L.
5. The aqueous electroless gold plating bath according to claim 1 or 2, characterized in that the pH of the aqueous electroless gold plating bath is in the range of 5 to 9.
6. The aqueous electroless gold plating bath according to claim 1 or 2, characterized in that the gold ion concentration ranges from 0.1g/L to 10g/L.
7. The aqueous electroless gold plating bath according to claim 1 or 2, characterized in that the aqueous electroless gold plating bath further comprises at least one complexing agent selected from the group consisting of carboxylic acids, hydroxycarboxylic acids, aminocarboxylic acids, aminophosphonic acids or salts of the foregoing.
8. A method for depositing a gold layer onto a substrate, the method comprising the steps of, in order
(i) A substrate is provided and a substrate is provided,
(ii) Contacting at least a portion of the surface of the substrate with an aqueous electroless gold plating bath according to any of claims 1 to 7,
and thereby depositing a gold layer on the at least a portion of the surface of the substrate.
9. The method for depositing a gold layer onto a substrate of claim 8 wherein the at least a portion of the surface is comprised of a metal or metal alloy and then gold is deposited onto the at least a portion of the surface comprised of a metal or metal alloy selected from the group consisting of nickel, nickel alloys, cobalt alloys, palladium alloys, copper and copper alloys and gold or gold alloys.
10. The use of ethylenediamine derivatives according to formula (I) as plating enhancer compounds in aqueous gold plating baths,
the ethylenediamine derivative has a residue R 1 And R is 2 Residues R in formula (I) 1 And R is 2 Is a branched alkyl residue having 3 carbon atoms, wherein each residue R 1 And R is 2 Likewise, the aqueous gold plating bath comprises at least one source of gold ions and at least one reducing agent for gold ions selected from the group consisting of aliphatic aldehydes, aliphatic dialdehydes, aliphatic unsaturated aldehydes, aromatic aldehydes, and sugars having aldehyde groups; wherein the molar ratio of the plating enhancer compound to the reducing agent according to formula (I) is from 1.0 to 2.0.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP15186095.4A EP3144413B1 (en) | 2015-09-21 | 2015-09-21 | Plating bath composition for electroless plating of gold |
EP15186095.4 | 2015-09-21 | ||
CN201680052427.3A CN108026642A (en) | 2015-09-21 | 2016-09-16 | Method for bath compositions and deposition thereof without electric golden plating |
PCT/EP2016/072053 WO2017050662A1 (en) | 2015-09-21 | 2016-09-16 | Plating bath composition for electroless plating of gold and a method for depositing a gold layer |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201680052427.3A Division CN108026642A (en) | 2015-09-21 | 2016-09-16 | Method for bath compositions and deposition thereof without electric golden plating |
Publications (1)
Publication Number | Publication Date |
---|---|
CN116607132A true CN116607132A (en) | 2023-08-18 |
Family
ID=54238228
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202310280778.1A Pending CN116607132A (en) | 2015-09-21 | 2016-09-16 | Plating bath composition for electroless gold plating and method of depositing gold layer |
CN201680052427.3A Pending CN108026642A (en) | 2015-09-21 | 2016-09-16 | Method for bath compositions and deposition thereof without electric golden plating |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201680052427.3A Pending CN108026642A (en) | 2015-09-21 | 2016-09-16 | Method for bath compositions and deposition thereof without electric golden plating |
Country Status (7)
Country | Link |
---|---|
US (1) | US20200232099A1 (en) |
EP (1) | EP3144413B1 (en) |
JP (1) | JP6930966B2 (en) |
KR (1) | KR20180044923A (en) |
CN (2) | CN116607132A (en) |
TW (1) | TWI709663B (en) |
WO (1) | WO2017050662A1 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ES2834877T3 (en) * | 2018-01-26 | 2021-06-21 | Atotech Deutschland Gmbh | Electrolytic gold plating bath |
JP7228411B2 (en) | 2019-03-06 | 2023-02-24 | 上村工業株式会社 | Electroless gold plating bath |
JP6945050B1 (en) * | 2020-12-01 | 2021-10-06 | 日本エレクトロプレイテイング・エンジニヤース株式会社 | Non-cyanide replacement gold plating solution and replacement gold plating method |
CN114003009B (en) * | 2021-10-29 | 2024-01-12 | 中国联合网络通信集团有限公司 | Copper deposition control method, training method and device of copper deposition control model |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4978559A (en) * | 1989-11-03 | 1990-12-18 | General Electric Company | Autocatalytic electroless gold plating composition |
JP3831842B2 (en) * | 2002-03-25 | 2006-10-11 | 奥野製薬工業株式会社 | Electroless gold plating solution |
DE602006013356D1 (en) * | 2006-07-13 | 2010-05-12 | Telecom Italia Spa | INK RADIATION CARTRIDGE WITH A LAYER MADE FROM A HARDENED RESIN COMPOSITION |
JP5526459B2 (en) | 2006-12-06 | 2014-06-18 | 上村工業株式会社 | Electroless gold plating bath and electroless gold plating method |
JP5013077B2 (en) * | 2007-04-16 | 2012-08-29 | 上村工業株式会社 | Electroless gold plating method and electronic component |
KR20130111923A (en) * | 2010-05-13 | 2013-10-11 | 인디애나 유니버시티 리서치 앤드 테크놀로지 코퍼레이션 | Glucagon superfamily peptides exhibiting g protein-coupled receptor activity |
JP4831710B1 (en) | 2010-07-20 | 2011-12-07 | 日本エレクトロプレイテイング・エンジニヤース株式会社 | Electroless gold plating solution and electroless gold plating method |
US20160230287A1 (en) * | 2014-08-25 | 2016-08-11 | Kojima Chemicals Co., Ltd. | Reductive electroless gold plating solution, and electroless gold plating method using the plating solution |
-
2015
- 2015-09-21 EP EP15186095.4A patent/EP3144413B1/en active Active
-
2016
- 2016-09-09 TW TW105129251A patent/TWI709663B/en active
- 2016-09-16 US US15/758,754 patent/US20200232099A1/en active Pending
- 2016-09-16 WO PCT/EP2016/072053 patent/WO2017050662A1/en active Application Filing
- 2016-09-16 JP JP2018515078A patent/JP6930966B2/en active Active
- 2016-09-16 CN CN202310280778.1A patent/CN116607132A/en active Pending
- 2016-09-16 KR KR1020187006725A patent/KR20180044923A/en not_active Application Discontinuation
- 2016-09-16 CN CN201680052427.3A patent/CN108026642A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
EP3144413A1 (en) | 2017-03-22 |
KR20180044923A (en) | 2018-05-03 |
CN108026642A (en) | 2018-05-11 |
WO2017050662A1 (en) | 2017-03-30 |
US20200232099A1 (en) | 2020-07-23 |
EP3144413B1 (en) | 2018-04-25 |
TWI709663B (en) | 2020-11-11 |
JP2018532046A (en) | 2018-11-01 |
TW201720955A (en) | 2017-06-16 |
JP6930966B2 (en) | 2021-09-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6161691B2 (en) | Plating bath for electroless deposition of nickel layers | |
TWI391523B (en) | Electroless gold plating bath, electroless gold plating method and electronic parts | |
US9249513B2 (en) | Beta-amino acid comprising plating formulation | |
TWI728217B (en) | Tin plating bath and a method for depositing tin or tin alloy onto a surface of a substrate | |
CN116607132A (en) | Plating bath composition for electroless gold plating and method of depositing gold layer | |
US6824597B2 (en) | Stabilizers for electroless plating solutions and methods of use thereof | |
JP6664400B2 (en) | Plating bath composition for palladium electroless plating and method for electroless plating of palladium | |
JP4105205B2 (en) | Electroless gold plating solution | |
JP6569026B1 (en) | Electroless palladium plating solution and palladium film | |
TW201339364A (en) | Alkaline plating bath for electroless deposition of cobalt alloys | |
US10385458B2 (en) | Plating bath composition and method for electroless plating of palladium | |
JP4831710B1 (en) | Electroless gold plating solution and electroless gold plating method | |
CN105051254B (en) | For the method for the copper surface active of electroless-plating | |
TW201638383A (en) | Electroless gold plating solution, aldehyde-amine adduct supply solution, and gold coating film formed using these solutions | |
TWI804539B (en) | Electroless gold plating bath | |
KR101476601B1 (en) | Nickel electroless plating solution and electronic component using same | |
EP3792374B1 (en) | Electroless copper plating bath | |
TW202043546A (en) | Electroless gold plating bath |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |