CN116606704A - Metal ion cleaning agent for semiconductor material - Google Patents
Metal ion cleaning agent for semiconductor material Download PDFInfo
- Publication number
- CN116606704A CN116606704A CN202310548240.4A CN202310548240A CN116606704A CN 116606704 A CN116606704 A CN 116606704A CN 202310548240 A CN202310548240 A CN 202310548240A CN 116606704 A CN116606704 A CN 116606704A
- Authority
- CN
- China
- Prior art keywords
- sodium
- metal ion
- cleaning agent
- cleaning
- semiconductor materials
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012459 cleaning agent Substances 0.000 title claims abstract description 56
- 239000000463 material Substances 0.000 title claims abstract description 38
- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 229910021645 metal ion Inorganic materials 0.000 title claims abstract description 30
- 238000004140 cleaning Methods 0.000 claims abstract description 46
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 42
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 36
- 229910019142 PO4 Inorganic materials 0.000 claims abstract description 28
- 239000004094 surface-active agent Substances 0.000 claims abstract description 27
- 239000010452 phosphate Substances 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 17
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims abstract description 16
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims abstract description 14
- ALSTYHKOOCGGFT-KTKRTIGZSA-N (9Z)-octadecen-1-ol Chemical compound CCCCCCCC\C=C/CCCCCCCCO ALSTYHKOOCGGFT-KTKRTIGZSA-N 0.000 claims abstract description 13
- 239000004115 Sodium Silicate Substances 0.000 claims abstract description 13
- XMLQWXUVTXCDDL-UHFFFAOYSA-N oleyl alcohol Natural products CCCCCCC=CCCCCCCCCCCO XMLQWXUVTXCDDL-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229940055577 oleyl alcohol Drugs 0.000 claims abstract description 13
- 229910052911 sodium silicate Inorganic materials 0.000 claims abstract description 13
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 claims abstract description 11
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 claims abstract description 11
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000005642 Oleic acid Substances 0.000 claims abstract description 11
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 claims abstract description 11
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims abstract description 11
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 claims abstract description 11
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 claims abstract description 11
- WXMKPNITSTVMEF-UHFFFAOYSA-M sodium benzoate Chemical compound [Na+].[O-]C(=O)C1=CC=CC=C1 WXMKPNITSTVMEF-UHFFFAOYSA-M 0.000 claims abstract description 11
- 235000010234 sodium benzoate Nutrition 0.000 claims abstract description 11
- 239000004299 sodium benzoate Substances 0.000 claims abstract description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 37
- 235000021317 phosphate Nutrition 0.000 claims description 24
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 22
- -1 polyoxyethylene Polymers 0.000 claims description 17
- 239000001577 tetrasodium phosphonato phosphate Substances 0.000 claims description 17
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 claims description 14
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 14
- 238000002791 soaking Methods 0.000 claims description 11
- 235000019832 sodium triphosphate Nutrition 0.000 claims description 11
- 239000008367 deionised water Substances 0.000 claims description 10
- 229910021641 deionized water Inorganic materials 0.000 claims description 10
- 150000003013 phosphoric acid derivatives Chemical class 0.000 claims description 9
- 239000000344 soap Substances 0.000 claims description 9
- FQENQNTWSFEDLI-UHFFFAOYSA-J sodium diphosphate Chemical compound [Na+].[Na+].[Na+].[Na+].[O-]P([O-])(=O)OP([O-])([O-])=O FQENQNTWSFEDLI-UHFFFAOYSA-J 0.000 claims description 9
- 229940048086 sodium pyrophosphate Drugs 0.000 claims description 9
- 235000019818 tetrasodium diphosphate Nutrition 0.000 claims description 9
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 8
- 239000011734 sodium Substances 0.000 claims description 8
- 229910052708 sodium Inorganic materials 0.000 claims description 8
- GCLGEJMYGQKIIW-UHFFFAOYSA-H sodium hexametaphosphate Chemical compound [Na]OP1(=O)OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])O1 GCLGEJMYGQKIIW-UHFFFAOYSA-H 0.000 claims description 8
- 235000019982 sodium hexametaphosphate Nutrition 0.000 claims description 8
- 239000001488 sodium phosphate Substances 0.000 claims description 8
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 claims description 8
- 235000019801 trisodium phosphate Nutrition 0.000 claims description 8
- 229910000406 trisodium phosphate Inorganic materials 0.000 claims description 8
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 7
- 150000002191 fatty alcohols Chemical class 0.000 claims description 7
- 230000029226 lipidation Effects 0.000 claims description 6
- 238000005406 washing Methods 0.000 claims description 5
- 239000007769 metal material Substances 0.000 claims description 4
- 150000001408 amides Chemical class 0.000 claims description 3
- 229910010293 ceramic material Inorganic materials 0.000 claims description 3
- LRMHFDNWKCSEQU-UHFFFAOYSA-N ethoxyethane;phenol Chemical compound CCOCC.OC1=CC=CC=C1 LRMHFDNWKCSEQU-UHFFFAOYSA-N 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims description 3
- 238000005238 degreasing Methods 0.000 abstract description 19
- 239000000126 substance Substances 0.000 abstract description 9
- 230000008569 process Effects 0.000 abstract description 7
- 239000003153 chemical reaction reagent Substances 0.000 abstract description 5
- 238000005202 decontamination Methods 0.000 abstract description 4
- 230000003588 decontaminative effect Effects 0.000 abstract description 4
- 230000007613 environmental effect Effects 0.000 abstract description 4
- 230000035699 permeability Effects 0.000 abstract description 4
- 230000002195 synergetic effect Effects 0.000 abstract description 2
- 230000000295 complement effect Effects 0.000 abstract 1
- 239000007788 liquid Substances 0.000 description 13
- 230000000694 effects Effects 0.000 description 12
- 229960004418 trolamine Drugs 0.000 description 12
- 235000019441 ethanol Nutrition 0.000 description 11
- 239000003921 oil Substances 0.000 description 9
- 239000000047 product Substances 0.000 description 9
- 239000000243 solution Substances 0.000 description 7
- 231100000419 toxicity Toxicity 0.000 description 6
- 230000001988 toxicity Effects 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- JLVVSXFLKOJNIY-UHFFFAOYSA-N Magnesium ion Chemical compound [Mg+2] JLVVSXFLKOJNIY-UHFFFAOYSA-N 0.000 description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- 230000003139 buffering effect Effects 0.000 description 4
- 229910001424 calcium ion Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 239000006260 foam Substances 0.000 description 4
- 229910001425 magnesium ion Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000693 micelle Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 239000012752 auxiliary agent Substances 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 239000011575 calcium Substances 0.000 description 3
- 239000003599 detergent Substances 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 238000004945 emulsification Methods 0.000 description 3
- 239000003995 emulsifying agent Substances 0.000 description 3
- 230000007062 hydrolysis Effects 0.000 description 3
- 238000006460 hydrolysis reaction Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 208000005374 Poisoning Diseases 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 235000014113 dietary fatty acids Nutrition 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 230000001804 emulsifying effect Effects 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 239000000194 fatty acid Substances 0.000 description 2
- 229930195729 fatty acid Natural products 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000008233 hard water Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 231100000092 inhalation hazard Toxicity 0.000 description 2
- 231100000053 low toxicity Toxicity 0.000 description 2
- 230000003211 malignant effect Effects 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 231100000572 poisoning Toxicity 0.000 description 2
- 230000000607 poisoning effect Effects 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000007127 saponification reaction Methods 0.000 description 2
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 2
- 229910000029 sodium carbonate Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- ICLYJLBTOGPLMC-KVVVOXFISA-N (z)-octadec-9-enoate;tris(2-hydroxyethyl)azanium Chemical compound OCCN(CCO)CCO.CCCCCCCC\C=C/CCCCCCCC(O)=O ICLYJLBTOGPLMC-KVVVOXFISA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- IFJOCHBDHXGFAA-UHFFFAOYSA-N CC([CH2-])=O.OCC(O)CO Chemical compound CC([CH2-])=O.OCC(O)CO IFJOCHBDHXGFAA-UHFFFAOYSA-N 0.000 description 1
- BHPQYMZQTOCNFJ-UHFFFAOYSA-N Calcium cation Chemical compound [Ca+2] BHPQYMZQTOCNFJ-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229920000742 Cotton Polymers 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910004074 SiF6 Inorganic materials 0.000 description 1
- BCKXLBQYZLBQEK-KVVVOXFISA-M Sodium oleate Chemical compound [Na+].CCCCCCCC\C=C/CCCCCCCC([O-])=O BCKXLBQYZLBQEK-KVVVOXFISA-M 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 125000002843 carboxylic acid group Chemical group 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- CQAIPTBBCVQRMD-UHFFFAOYSA-L dipotassium;phosphono phosphate Chemical compound [K+].[K+].OP(O)(=O)OP([O-])([O-])=O CQAIPTBBCVQRMD-UHFFFAOYSA-L 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- GVGUFUZHNYFZLC-UHFFFAOYSA-N dodecyl benzenesulfonate;sodium Chemical compound [Na].CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 GVGUFUZHNYFZLC-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000010720 hydraulic oil Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229940051841 polyoxyethylene ether Drugs 0.000 description 1
- 229920000056 polyoxyethylene ether Polymers 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- ZIWRUEGECALFST-UHFFFAOYSA-M sodium 4-(4-dodecoxysulfonylphenoxy)benzenesulfonate Chemical compound [Na+].CCCCCCCCCCCCOS(=O)(=O)c1ccc(Oc2ccc(cc2)S([O-])(=O)=O)cc1 ZIWRUEGECALFST-UHFFFAOYSA-M 0.000 description 1
- 229940080264 sodium dodecylbenzenesulfonate Drugs 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005063 solubilization Methods 0.000 description 1
- 230000007928 solubilization Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229940117013 triethanolamine oleate Drugs 0.000 description 1
- UNXRWKVEANCORM-UHFFFAOYSA-I triphosphate(5-) Chemical compound [O-]P([O-])(=O)OP([O-])(=O)OP([O-])([O-])=O UNXRWKVEANCORM-UHFFFAOYSA-I 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 239000003871 white petrolatum Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D10/00—Compositions of detergents, not provided for by one single preceding group
- C11D10/04—Compositions of detergents, not provided for by one single preceding group based on mixtures of surface-active non-soap compounds and soap
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/044—Hydroxides or bases
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/06—Phosphates, including polyphosphates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/08—Silicates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2003—Alcohols; Phenols
- C11D3/2006—Monohydric alcohols
- C11D3/201—Monohydric alcohols linear
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2003—Alcohols; Phenols
- C11D3/2006—Monohydric alcohols
- C11D3/2027—Monohydric alcohols unsaturated
- C11D3/2031—Monohydric alcohols unsaturated fatty or with at least 8 carbon atoms in the alkenyl chain
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
- C11D3/2079—Monocarboxylic acids-salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/30—Amines; Substituted amines ; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/02—Anionic compounds
- C11D1/12—Sulfonic acids or sulfuric acid esters; Salts thereof
- C11D1/22—Sulfonic acids or sulfuric acid esters; Salts thereof derived from aromatic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/72—Ethers of polyoxyalkylene glycols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D9/00—Compositions of detergents based essentially on soap
- C11D9/02—Compositions of detergents based essentially on soap on alkali or ammonium soaps
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Abstract
The invention relates to the technical field of semiconductor cleaning, which comprises the following components in parts by weight: 10% -16% of a surfactant; triethanolamine 0.1% -0.2%; 2% -5% of sodium benzoate; 4% -8% of condensed phosphate; 3% -6% of sodium silicate; 0.5% -1% of sodium hydroxide; oleic acid 0.3% -0.5%; oleyl alcohol 0.5% -0.8%; ethanol 0.6% -1%; the invention discloses a metal ion cleaning agent for semiconductor materials, which forms a mixed homogeneous system, so that the cleaning agent has strong decontamination and degreasing capabilities, and the surface of the cleaned part is smooth, the permeability cavity is good, the wettability is short, the process period is short, the chemical reagent amount is small, the cleaning agent concentration is low, the cleaning agent is easy to wash clean, and the environmental protection performance is high through the synergistic effect and the complementary effect of various substances in the cleaning agent.
Description
Technical Field
The invention relates to the technical field of semiconductor cleaning, in particular to a metal ion cleaning agent for semiconductor materials.
Background
Chemical cleaning refers to a process of using various chemical reagents and organic solvents to perform chemical reaction or dissolution with impurities and greasy dirt adsorbed on the surface of an object to be cleaned, or using physical measures such as ultrasound, heating, vacuumizing and the like to enable the impurities to be desorbed (desorbed) from the surface of the object to be cleaned, and then flushing the object with a large amount of high-purity hot and cold deionized water so as to obtain a clean surface.
The RCA cleaning process is known as an industry standard wet cleaning process. In production, the RCA method and the improvement based on the RCA cleaning method are commonly used in cleaning the surface of semiconductor materials, wherein the RCA cleaning method mainly comprises a series of chemical liquids which are sequentially invaded into different types, namely a cleaning agent I (APM) and a cleaning agent II (HPM). The preparation of the cleaning agent I (APM) comprises the steps of using deionized water, 30% hydrogen peroxide and 25% ammonia water according to the volume ratio of 5:1:1 to 5:2:1; the preparation of the No. II cleaning agent (HPM) comprises deionized water, 30% hydrogen peroxide and 25% hydrochloric acid according to the volume ratio: 6:1:1 to 8:2:1. The cleaning principle is that ammonia molecules, chloride ions and the like form stable complexes with heavy metal ions such as copper ions, iron ions and the like, such as [ AuCl4 ]] - 、[Cu(NH3)4] 2+ 、[SiF6] 2- 。
When in cleaning, the cleaning is generally carried out at 75-85 ℃ for about 15 minutes, and then the cleaning is carried out by deionized water. Because a large amount of chemical liquid is used for RCA cleaning, the method has great hidden danger to human health and safety, and the factory cost and the pollution to the environment are great because of the use of a large amount of chemical liquid. And the development direction of the cleaning technology in the future is towards the reduction of chemical liquid and cleaning flow.
Therefore, a cleaning process method and related cleaning agent which have the advantages of less cleaning steps, small amount of chemical reagents, low concentration of cleaning liquid and environmental friendliness are needed.
Disclosure of Invention
The invention aims to provide a metal ion cleaning agent for semiconductor materials, which solves the problems of large usage amount, high concentration and environmental pollution of the existing cleaning agent in the background technology.
In order to achieve the above purpose, the present invention provides the following technical solutions: the metal ion cleaning agent for the semiconductor material comprises the following components in parts by weight:
10% -16% of a surfactant; triethanolamine 0.1% -0.2%; 2% -5% of sodium benzoate; 4% -8% of condensed phosphate; 3% -6% of sodium silicate; 0.5% -1% of sodium hydroxide; oleic acid 0.3% -0.5%; oleyl alcohol 0.5% -0.8%; ethanol 0.6% -1%; the balance being water.
As a further illustration of the invention, the composition comprises the following components in parts by weight:
10% of a surfactant; triethanolamine 0.1%; 2% of sodium benzoate; 4% of condensed phosphate; 3% of sodium silicate; sodium hydroxide 0.5%; oleic acid 0.3%; oleyl alcohol 0.5%; ethanol 0.6%; the balance being water.
As a further illustration of the invention, the composition comprises the following components in parts by weight:
a surfactant 16%; triethanolamine 0.2%; sodium benzoate 5%; 8% of condensed phosphate; sodium silicate 6%; 1% of sodium hydroxide; oleic acid 0.5%; oleyl alcohol 0.8%; ethanol 1%; the balance being water.
As a further illustration of the present invention, the surfactant comprises: sodium alkylbenzenesulfonate, polyoxyethylene fatty alcohol ether, polyoxyethylene octylphenol ether, dodecyl diethanolamide, triethanolamine oleic soap, and the lipidation products of dodecyl diethanolamide-phosphate salts.
As a further illustration of the present invention, the condensed phosphates include sodium pyrophosphate, sodium tripolyphosphate, sodium hexametaphosphate, and trisodium phosphate.
As a further illustration of the present invention, the weight ratios of the lipidated products of sodium alkylbenzenesulfonate, polyoxyethylene fatty alcohol ether, polyoxyethylene octylphenol ether, dodecyl diethanolamide, triethanolamine oleic soap, and dodecyl diethanolamide-phosphate salt are: 1:2:2:2:1:1.
As a further illustration of the invention, the weight ratio of the condensed phosphates of sodium pyrophosphate, sodium tripolyphosphate, sodium hexametaphosphate and trisodium phosphate is as follows: 1:3:1:1.
The use method of the metal ion cleaning agent specifically comprises the following steps: soaking and vibrating the semiconductor material with a cleaning agent for 10-15 minutes, and washing with deionized water after cleaning; the soaking cleaning temperature is controlled to be 10-60 ℃, and the soaking vibration cleaning equipment is megasonic cleaning equipment.
The semiconductor material is a silicon material, a quartz material or a ceramic material.
The application of a metal ion cleaning agent for semiconductor materials in cleaning semiconductor metal materials.
Compared with the prior art, the invention has the beneficial effects that:
the invention realizes that the metal ion cleaning agent of the semiconductor material forms a mixed homogeneous system through the arranged surfactant, condensed phosphate and deionized water, so that the cleaning agent has strong decontamination and degreasing capabilities, the surface of the cleaned part is smooth, the permeability cavity is good, the wettability is good, parts with complex geometric shapes can be cleaned, the residual cleaning agent is easy to wash away, the toxicity is low, all components in the cleaning agent can be degraded in organisms, accumulated toxicity cannot be caused, only a small amount of volatile matters of ethanol are less, the gas inhalation hazard cannot occur, a small amount of auxiliary agents belong to low toxicity and micro toxicity, acute and malignant poisoning cannot occur, the cleaning agent is convenient to use, the material can be cleaned by direct soaking vibration cleaning, the cleaning agent with complex geometric shapes can be cleaned cleanly for 15-20 minutes, the whole process cycle is short, the chemical reagent amount is low, the cleaning agent concentration is easy to wash cleanly, and the environmental protection performance is high.
Detailed Description
The technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the embodiments of the present invention, and it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments.
Embodiment one: the invention provides a technical scheme that: the metal ion cleaning agent for the semiconductor material comprises the following components in parts by weight:
10% -16% of a surfactant; triethanolamine 0.1% -0.2%; 2% -5% of sodium benzoate; 4% -8% of condensed phosphate; 3% -6% of sodium silicate; 0.5% -1% of sodium hydroxide; oleic acid 0.3% -0.5%; oleyl alcohol 0.5% -0.8%; ethanol 0.6% -1%; the balance being water.
The invention relates to a cleaning agent mainly comprising a surfactant, and the cleaning function of the cleaning agent is mainly related to the chemical properties of the surfactant. The molecular structure of the surfactant has two parts, namely a hydrophilic group and a lipophilic group. In water, air, oil systems, there is a tendency to accumulate on surfaces or interfaces. The molecules are arranged in an oriented way, hydrophilic groups extend into the water phase, lipophilic groups extend into the air or oil phase, so that the surface or interface tension is reduced, and the effects of permeation, solubilization, emulsification and the like are combined, so that oil stains can be dissolved out of the surface of the part, and the cleaning and washing effects are realized. The balance of auxiliary agents are used for improving and enhancing the chemical activity of the surfactant, buffering the pH value, inhibiting the occurrence of harmful particles, enhancing the function of the cleaning agent and the like.
Specifically, triethanolamine can inhibit hydrolysis of triethanolamine oleic soap, which is itself a surfactant. Sodium benzoate is a good penetrating agent and a solubilizer, and is convenient for mutual dissolution and complementation of various substances in the cleaning agent.
In particular, sodium silicate, also known as water glass, is a low cost base which generates OH when hydrolyzed in water -1， Providing alkalinity. Therefore, sodium carbonate has a buffering action, avoiding corrosion of certain nonferrous metals as strong bases. Stable colloid can be formed in water to form solvated micelle, and the solvated micelle has good washing assisting effect when used together with a surfactant. Silicate is hydrolyzed in water, silicic acid generated by the hydrolysis is insoluble in water and is suspended in a tank liquid in a micelle structure, and the silicic acid is dissolvedThe micelle has suspending and dispersing ability to particles of solid dirt and emulsifying effect to greasy dirt, so that the dirt is prevented from redeposition on the surface of a workpiece. Silicate has a buffering action, i.e. its pH remains almost unchanged in the presence of acidic soils.
Sodium silicate can also form a precipitate with high-valence metal ions in water to generate indissolvable calcium carbonate, so that the sodium silicate has certain softening capacity for hard water. Can remove ferric salt in water, complex calcium and magnesium ions, and has effect of softening water.
Specifically, sodium hydroxide is ionized to 0H after being dissolved in water -1 Alkalinity is provided, and saponification reaction can be carried out with oil during cleaning, so that glycerin and fatty acid salt which can be dissolved in water are generated, and are dissolved and dispersed in an aqueous solution. The generated fatty acid sodium soap not only has water solubility, but also plays a role of a surfactant, and can enable inactive greasy dirt to be emulsified and dispersed by residual alkali. The same phenomenon can occur when carboxylic acid groups and sulfonic acid groups are present in the grease. In addition, a small amount of sodium hydroxide can adjust the PH value of the whole cleaning agent, so that the PH value of the cleaning agent is slightly alkaline.
Specifically, oleic acid and sodium salt in the components form sodium oleate which has good detergency and can be used as a surfactant such as an emulsifier.
Specifically, oleyl alcohol and ethanol have low surface tension and small interfacial energy, so when air is mixed into a solution, surfactant molecules are sequentially arranged and adsorbed on a gas-liquid interface, so that formed bubbles have certain viscosity and tend to be stable, a large amount of bubbles are separated by a thin liquid film and are gathered in a large amount to form foam, and a proper amount of foam has the effect of helping to suspend greasy dirt. However, if the foam is too much, the foam can be discharged out of the cleaning machine, so that not only is the field polluted, but also the cleaning agent is lost, and the oleyl alcohol and the ethanol have very effective defoaming effect. When ethanol is used as a solubilizer of oleyl alcohol, liquid adjacent to the surface layer can be taken away when the liquid level of the bubble film spreads, so that the liquid film is locally thinned, and then the liquid film breaks to achieve the purpose of defoaming.
Specifically, the surfactant includes: sodium alkylbenzenesulfonate, polyoxyethylene fatty alcohol ether, polyoxyethylene octylphenol ether, dodecyl diethanolamide, triethanolamine oleic soap, and the lipidation products of dodecyl diethanolamide-phosphate salts. The weight ratio of the lipidation products of sodium alkylbenzenesulfonate, polyoxyethylene fatty alcohol ether, polyoxyethylene octyl phenol ether, dodecyl diethanol amide, triethanolamine oleic soap and dodecyl diethanol amide-phosphate is as follows: 1:2:2:2:2:1.
Sodium alkylbenzenesulfonate has a surfactant for decontamination, wetting, foaming, emulsification and dispersion; polyoxyethylene fatty alcohol ether, which is a light yellow viscosity-adjusting liquid which is easily dissolved in oil and other organic solvents and is used as an oleophilic permeability emulsifier; polyoxyethylene octyl phenol ether is used as a dispersing agent; dodecyl diethanol amide has good water solubility, is used as an emulsifier, has an antirust effect, and plays a role in stabilizing bubbles and removing dirt in a cleaning agent; the lipidation products of triethanolamine oleate soap and dodecyl diethanolamide-phosphate are used for removing metal ions attached to the surface of semiconductor material products.
Specifically, the condensed phosphates include sodium pyrophosphate, sodium tripolyphosphate, sodium hexametaphosphate, and trisodium phosphate. The weight ratio of the condensed phosphates of sodium pyrophosphate, sodium tripolyphosphate, sodium hexametaphosphate and trisodium phosphate is as follows: 1:3:1:1.
Trisodium phosphate is a condensed phosphate, which upon hydrolysis generates phosphoric acid with a small degree of dissociation, thereby achieving alkalinity. Therefore, the detergent is a good acid-base buffer agent, so that the PH value of the detergent is stabilized near 9, trisodium phosphate has the effect of softening hard water and obviously promoting the dispersion (emulsification) of dirt particles, and the detergent also has higher alkalinity, so that fat dirt can be dissolved through saponification. Other condensed phosphates, including sodium pyrophosphate, sodium tripolyphosphate, sodium hexametaphosphate, all have an important property in that they are used as multivalent integrator, and the resulting integrator will not precipitate out of the aqueous solution, i.e., the condensed phosphate will not cause any precipitation upon softening of the water. The chelating force for calcium ions is strongest with sodium hexametaphosphate, the chelating force for magnesium ions is strongest with sodium pyrophosphate, and the integrating force of sodium tripolyphosphate for calcium and magnesium ions is between the two. All condensed phosphates, especially sodium tripolyphosphate and sodium dodecyl benzene sulfonate have obvious synergistic effect, and the compound ratio of the two has a cleaning effect which is greatly improved compared with the cleaning effect of one of the two. In addition, they have buffering, dispersing and emulsifying action.
In addition, sodium pyrophosphate has certain phosphating effect on metal parts at 50-60 ℃, so that the corrosion resistance of metal materials is improved, and the proper proportion and concentration have no corrosion phenomenon on the product itself, and the roughness of the product is not increased, so that the quality of the product is affected.
Embodiment two: the metal ion cleaning agent for the semiconductor material comprises the following components in parts by weight:
10% of a surfactant; triethanolamine 0.1%; 2% of sodium benzoate; 4% of condensed phosphate; 3% of sodium silicate; sodium hydroxide 0.5%; oleic acid 0.3%; oleyl alcohol 0.5%; ethanol 0.6%; the balance being water.
Embodiment III: the metal ion cleaning agent for the semiconductor material comprises the following components in parts by weight: comprises the following components in parts by weight:
a surfactant 16%; triethanolamine 0.2%; sodium benzoate 5%; 8% of condensed phosphate; sodium silicate 6%; 1% of sodium hydroxide; oleic acid 0.5%; oleyl alcohol 0.8%; ethanol 1%; the balance being water.
Embodiment four: the use method of the metal ion cleaning agent specifically comprises the following steps: soaking and vibrating the semiconductor material with a cleaning agent for 10-15 minutes, and washing with deionized water after cleaning; the soaking cleaning temperature is controlled to be 10-60 ℃, and the soaking vibration cleaning equipment is megasonic cleaning equipment.
The concentration (unit weight percent) of the cleaning solution in the specific method is shown in table 1:
the comparative example is publication No.: CN113980747a is an alkaline degreasing cleaning solution in cleaning agents for degreasing the surface of semiconductor materials: 2.6 percent of potassium hydroxide, 2.6 percent of potassium carbonate, 3.5 percent of dipotassium dihydrogen pyrophosphate, 2.6 percent of potassium tripolyphosphate, 5.5 percent of acetonide glycerol, 1.4 percent of sodium dodecyl diphenyl ether disulfonate, 1.7 percent of H-661.8 percent of fatty amine polyoxyethylene ether and the balance of deionized water
Table 1:
an alkaline degreasing bath was prepared according to the procedure in comparative example. Degreasing test was performed by the test:
experimental part:
preparation of Artificial oil stain (weight portion)
Reference is made to JB/T4323.2-1999 Water-based Metal cleaner test methods.
2 parts of N32HL hydraulic oil (universal machine tool industrial oil);
1 part of industrial white vaseline;
1 part of barium petroleum sulfonate;
mixing the above components, dissolving at about 120 deg.C, and stirring.
The test piece material adopts 45# steel as a test piece for oil removal rate test. The diameter of the test piece is 50mm, the thickness is 3-5mm, and the surface roughness Ra0.16-0.63.
And (3) clamping absorbent cotton by using tweezers, scrubbing the polished test piece in absolute ethyl alcohol and acetone in sequence, drying by hot air, and cooling in a dryer for later use. The test piece for rust-proof corrosion is not longer than 16 hours after polishing, otherwise, the test piece should be treated again.
Determination of degreasing Rate
Reference is made to JB/T4323.2-1999 Water-based Metal cleaner test methods.
The oiled test piece is placed into a cleaning solution (25C) to be soaked for 3min, then is swayed for 30min, is rinsed for 5s by water and is dried.
Placing the mixture into a dryer for constant weight for 20min, weighing W2, wherein the degreasing rate is as follows:
degreasing rate = (W1-W2)/(W1-W0) ×100%
Wherein W0 is the weight (g) of the unoiled test piece,
w1 is the weight (g) of the test piece after oiling,
w2 is the weight (g) of the clean test piece with the greasy dirt completely removed.
Degreasing rates are shown in table 2:
TABLE 2
| Degreasing Rate (%) | |
| Comparative example | 88.18 |
| Example two | 95.53 |
| Example III | 98.03 |
As can be seen from Table 2.2, the degreasing rate of the comparative example is low, and the degreasing rate is relatively high by using the cleaning agent of the present invention, and the degreasing rate of both examples II and III exceeds 95%. However, since different cleaning agents have different cloud points, the properties exceeding the cloud points change, thereby affecting degreasing performance, and since degreasing cleaning temperature sometimes needs to be heated, the cleaning agent of the invention performs best when used at a temperature of 20-50 ℃.
In addition, when the cleaning agent removes metal ions, the amount of condensed phosphate chelated metal ions is shown in table 3:
TABLE 3 Table 3
The degreasing rate of the surfactant is reduced due to calcium and magnesium ions in water, and the condensed phosphate can play roles in dispersing, coordinating and preventing oil stains from depositing, and the degreasing performance of the surfactant can be improved by adjusting the pH value of the solution. If sodium carbonate is added, precipitation occurs, so that condensed phosphates such as sodium tripolyphosphate are selected as pH regulators, improving the cleaning dispersion performance.
Fifth embodiment: the semiconductor material is a silicon material, a quartz material or a ceramic material. The application of a metal ion cleaning agent for semiconductor materials in cleaning semiconductor metal materials.
The invention realizes that the metal ion cleaning agent of the semiconductor material forms a mixed homogeneous system through the arranged surfactant, condensed phosphate and deionized water, so that the cleaning agent has strong decontamination and degreasing capabilities, the surface of the cleaned part is smooth, the permeability cavity is good, the wettability is good, parts with complex geometric shapes can be cleaned, the residual cleaning agent is easy to wash away, the toxicity is low, all components in the cleaning agent can be degraded in organisms, accumulated toxicity cannot be caused, only a small amount of volatile matters of ethanol are less, the gas inhalation hazard cannot occur, a small amount of auxiliary agents belong to low toxicity and micro toxicity, acute and malignant poisoning cannot occur, the cleaning agent is convenient to use, the material can be cleaned by direct soaking vibration cleaning, the cleaning agent with complex geometric shapes can be cleaned cleanly for 15-20 minutes, the whole process cycle is short, the chemical reagent amount is low, the cleaning agent concentration is easy to wash cleanly, and the environmental protection performance is high.
All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Claims (10)
1. A metal ion cleaner for semiconductor materials, characterized in that: comprises the following components in parts by weight:
10% -16% of a surfactant; triethanolamine 0.1% -0.2%; 2% -5% of sodium benzoate; 4% -8% of condensed phosphate; 3% -6% of sodium silicate; 0.5% -1% of sodium hydroxide; oleic acid 0.3% -0.5%; oleyl alcohol 0.5% -0.8%; ethanol 0.6% -1%; the balance being water.
2. A metal ion cleaner for semiconductor materials according to claim 1, wherein: comprises the following components in parts by weight:
10% of a surfactant; triethanolamine 0.1%; 2% of sodium benzoate; 4% of condensed phosphate; 3% of sodium silicate; sodium hydroxide 0.5%; oleic acid 0.3%; oleyl alcohol 0.5%; ethanol 0.6%; the balance being water.
3. A metal ion cleaner for semiconductor materials according to claim 1, wherein: comprises the following components in parts by weight:
a surfactant 16%; triethanolamine 0.2%; sodium benzoate 5%; 8% of condensed phosphate; sodium silicate 6%; 1% of sodium hydroxide; oleic acid 0.5%; oleyl alcohol 0.8%; ethanol 1%; the balance being water.
4. A metal ion cleaner for semiconductor materials according to claim 1, wherein: the surfactant comprises: sodium alkylbenzenesulfonate, polyoxyethylene fatty alcohol ether, polyoxyethylene octylphenol ether, dodecyl diethanolamide, triethanolamine oleic soap, and the lipidation products of dodecyl diethanolamide-phosphate salts.
5. A metal ion cleaner for semiconductor materials according to claim 1, wherein: the condensed phosphates include sodium pyrophosphate, sodium tripolyphosphate, sodium hexametaphosphate and trisodium phosphate.
6. The metal ion cleaning agent for semiconductor materials as claimed in claim 4, wherein: the weight ratio of the lipidation products of sodium alkylbenzenesulfonate, polyoxyethylene fatty alcohol ether, polyoxyethylene octyl phenol ether, dodecyl diethanol amide, triethanolamine oleic soap and dodecyl diethanol amide-phosphate is as follows: 1:2:2:2:1:1.
7. The metal ion cleaning agent for semiconductor materials according to claim 5, wherein: the weight ratio of the condensed phosphates of sodium pyrophosphate, sodium tripolyphosphate, sodium hexametaphosphate and trisodium phosphate is as follows: 1:3:1:1.
8. A metal ion cleaner for semiconductor materials according to claim 1, wherein: the use method of the metal ion cleaning agent specifically comprises the following steps: soaking and vibrating the semiconductor material with a cleaning agent for 20-30 minutes, and washing with deionized water after cleaning; the soaking cleaning temperature is controlled to be 10-60 ℃, and the soaking vibration cleaning equipment is megasonic cleaning equipment.
9. A metal ion cleaner for semiconductor materials according to claim 1, wherein: the semiconductor material is a silicon material, a quartz material or a ceramic material.
10. Use of a metal ion cleaner for semiconductor materials according to any of claims 1-9 for cleaning semiconductor metal materials.
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