CN116587158A - Chemical mechanical polishing apparatus and method for adjusting chemical mechanical planarization - Google Patents

Chemical mechanical polishing apparatus and method for adjusting chemical mechanical planarization Download PDF

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Publication number
CN116587158A
CN116587158A CN202310455036.8A CN202310455036A CN116587158A CN 116587158 A CN116587158 A CN 116587158A CN 202310455036 A CN202310455036 A CN 202310455036A CN 116587158 A CN116587158 A CN 116587158A
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CN
China
Prior art keywords
polishing
grinding
signal
wafer
chemical mechanical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202310455036.8A
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Chinese (zh)
Inventor
蔡伟芹
裴士霜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Changxin Memory Technologies Inc
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Changxin Memory Technologies Inc
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Filing date
Publication date
Application filed by Changxin Memory Technologies Inc filed Critical Changxin Memory Technologies Inc
Priority to CN202310455036.8A priority Critical patent/CN116587158A/en
Publication of CN116587158A publication Critical patent/CN116587158A/en
Pending legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/007—Weight compensation; Temperature compensation; Vibration damping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B47/00—Drives or gearings; Equipment therefor
    • B24B47/20—Drives or gearings; Equipment therefor relating to feed movement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/006—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the speed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
    • B24B49/165—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load for grinding tyres
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/10—Greenhouse gas [GHG] capture, material saving, heat recovery or other energy efficient measures, e.g. motor control, characterised by manufacturing processes, e.g. for rolling metal or metal working

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

Embodiments of the present disclosure relate to a chemical mechanical polishing apparatus and a method of adjusting chemical mechanical planarization. The chemical mechanical polishing apparatus includes: an abrasive disk carrying a polishing pad; the grinding head is positioned above the grinding disc, and one surface of the grinding head, which is close to the grinding disc, is provided with a wafer; the first detection device is arranged at the outer side of the wafer and is used for detecting the thickness change of the wafer and generating a thickness difference signal according to the thickness change; the control device is connected with the first detection device and used for receiving the thickness difference signal and generating a control signal according to the thickness difference signal, wherein the control signal is used for adjusting the first interval between the grinding disc and the grinding head so as to keep the grinding speed of the polishing pad for grinding the wafer unchanged. And generating a control signal for adjusting the first interval between the grinding disc and the grinding according to the thickness difference signal, so that the thickness change of the polishing pad and the wafer does not influence the grinding rate of the chemical mechanical grinding process, and the grinding process of the chemical mechanical grinding process is ensured to be stably carried out.

Description

Chemical mechanical polishing apparatus and method for adjusting chemical mechanical planarization
Technical Field
Embodiments of the present disclosure relate to the field of semiconductor technology, and more particularly, to a chemical mechanical polishing apparatus and a method for adjusting chemical mechanical planarization.
Background
The polishing disc (plate) is a supporting platform for chemical mechanical polishing, and is used for bearing a polishing pad for polishing the surface of a wafer and driving the polishing pad to rotate, in a typical chemical mechanical polishing process, the position of the polishing disc (plate) is fixed, and the thickness of the polishing pad and the thickness of the wafer are changed along with the progress of the chemical mechanical polishing process, so that the polishing rate of the chemical mechanical polishing process is affected, and the polishing process of the chemical mechanical polishing process becomes unstable.
Disclosure of Invention
The embodiment of the disclosure provides a chemical mechanical polishing device and a method for adjusting chemical mechanical planarization, which can eliminate the influence of thickness variation of a polishing pad and a wafer on the polishing rate of a chemical mechanical polishing process, so that the polishing process of the chemical mechanical polishing process is stably carried out.
The present disclosure provides a chemical mechanical polishing apparatus, comprising:
a polishing pad for supporting a polishing pad;
the grinding head is positioned above the grinding disc, and one surface of the grinding head, which is close to the grinding disc, is provided with a wafer;
the first detection device is arranged at the outer side of the wafer and is used for detecting the thickness change of the wafer and generating a thickness difference signal according to the thickness change;
the control device is connected with the first detection device and used for receiving the thickness difference signal and generating a control signal according to the thickness difference signal, and the control signal is used for adjusting the first interval between the grinding disc and the grinding head so as to keep the grinding speed of the polishing pad for grinding the wafer unchanged.
In one embodiment, a chemical mechanical polishing apparatus includes:
the second detection device is arranged on the outer side of the wafer and is used for detecting the abrasion loss of the polishing pad and generating an abrasion signal according to the abrasion loss;
the control device is connected with the second detection device and is also used for generating the control signal according to the abrasion signal and the thickness difference signal.
In one embodiment, the chemical mechanical polishing apparatus further comprises:
and the grinding disc driving device is connected with the control device and is used for adjusting the first interval according to the control signal.
In one embodiment, the chemical mechanical polishing apparatus further comprises:
the pressure detection device is used for detecting the grinding pressure between the polishing pad and the wafer and generating a pressure detection signal according to the grinding pressure;
the control device is connected with the pressure detection device and is used for receiving the pressure detection signal and generating a pressure adjustment signal according to the pressure detection signal and the thickness difference signal, wherein the pressure adjustment signal is used for adjusting the grinding pressure between the polishing pad and the wafer so as to keep the grinding speed unchanged.
In one embodiment, the chemical mechanical polishing apparatus further comprises:
a speed detecting device for detecting the rotation speed of the grinding head and generating a speed detecting signal according to the rotation speed;
the control device is connected with the speed detection device and is used for receiving the speed detection signal and generating a speed adjustment signal according to the speed detection signal, wherein the speed adjustment signal is used for adjusting the rotation speed of the grinding head so as to keep the grinding speed unchanged.
In one embodiment, the chemical mechanical polishing apparatus further comprises:
the grinding head driving device is connected with the control device and is used for adjusting the rotation speed of the grinding head according to the speed adjusting signal; and the first interval is also used for adjusting according to the control signal.
In the chemical mechanical polishing equipment, the first detection device detects the thickness change of the wafer, generates a thickness difference signal according to the thickness change, the control device receives the thickness difference signal, generates a control signal according to the thickness difference signal, and the control signal is used for adjusting the first interval between the polishing disc and the polishing head so as to keep the polishing speed of the polishing pad for polishing the wafer unchanged, and generates a control signal for adjusting the first interval between the polishing disc and the polishing according to the thickness difference signal so that the polishing speed of the chemical mechanical polishing process is not influenced by the thickness change of the polishing pad and the wafer, thereby ensuring that the polishing process of the chemical mechanical polishing process is stably carried out.
The present disclosure also provides a method for adjusting chemical mechanical planarization, which planarizes a wafer surface by using a chemical mechanical polishing apparatus, the chemical mechanical polishing apparatus including a polishing platen and a polishing head, the polishing platen being configured to carry a polishing pad, the polishing head being located above the polishing platen, a surface of the polishing head adjacent to the polishing platen carrying a wafer, the method for adjusting chemical mechanical planarization comprising:
detecting thickness variation of a wafer, and generating a thickness difference signal according to the thickness variation;
generating a control signal according to the thickness difference signal;
and adjusting the first interval between the grinding disc and the grinding head according to the control signal so as to keep the grinding speed of the polishing pad for grinding the wafer unchanged.
In one embodiment, the method of adjusting chemical mechanical planarization further comprises:
detecting the abrasion loss of the polishing pad and generating an abrasion signal according to the abrasion loss;
generating the control signal from the thickness difference signal comprises:
a control signal is generated based on the thickness difference signal and the wear signal.
In one embodiment, the method of adjusting chemical mechanical planarization further comprises:
detecting the grinding pressure between the polishing pad and the wafer, and generating a pressure detection signal according to the grinding pressure;
generating a pressure adjustment signal based on the pressure detection signal and the thickness difference signal;
the pressure between the polishing pad and the wafer is adjusted according to the pressure adjustment signal so that the polishing rate remains unchanged.
In one embodiment, the method of adjusting chemical mechanical planarization further comprises:
detecting the rotation speed of the grinding head and generating a speed detection signal according to the rotation speed;
and generating a speed adjusting signal according to the speed detecting signal, wherein the speed adjusting signal is used for adjusting the rotating speed of the grinding head so as to keep the grinding speed unchanged.
According to the method for adjusting the chemical mechanical planarization, the first interval between the polishing disc and the polishing head is finally generated according to the thickness change of the wafer, so that the polishing speed of the polishing pad for polishing the wafer can be kept unchanged.
Drawings
In order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the related art, the drawings that are required to be used in the embodiments or the related technical descriptions will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present disclosure, and other drawings may be obtained according to the drawings without inventive effort to those of ordinary skill in the art.
FIG. 1 is a schematic cross-sectional view of a chemical mechanical polishing apparatus according to embodiment 1;
FIG. 2 is a schematic cross-sectional view of the chemical mechanical polishing apparatus of embodiment 2;
FIG. 3 is a schematic cross-sectional view of the chemical mechanical polishing apparatus of embodiment 3;
FIG. 4 is a schematic cross-sectional view of the chemical mechanical polishing apparatus of embodiment 4;
FIG. 5 is a flow chart illustrating a method for adjusting chemical mechanical planarization in accordance with one embodiment;
FIG. 6 is a flow chart of a method for adjusting chemical mechanical planarization in another embodiment;
FIG. 7 is a flow chart of a method for adjusting chemical mechanical planarization in yet another embodiment.
Reference numerals illustrate:
102. a grinding disc; 104. a polishing pad; 106. a grinding head; 108. a wafer; 110. a first detection device; 112. a control device; 114. a second detection device; 116. a grinding disc drive; 118. a pressure detection device; 120. a speed detecting device; 122. a polishing head driving device; 124. an end point detection device; 202. a base; 204. a positioning ring; 206. a first groove; 208. a first opening; 210. a second opening; 212. a base; 214. a second groove; 216. and (3) rotating the shaft.
Detailed Description
In order to facilitate an understanding of the disclosed embodiments, the disclosed embodiments are described more fully below with reference to the accompanying drawings. Preferred embodiments of the presently disclosed embodiments are shown in the drawings. However, the disclosed embodiments may be embodied in many different forms and are not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which embodiments of this disclosure belong. The terminology used in the description of the embodiments of the disclosure herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the embodiments of the disclosure. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
In the description of the embodiments of the present disclosure, it should be understood that the terms "upper," "lower," "vertical," "horizontal," "inner," "outer," and the like indicate orientations or positional relationships based on the methods or positional relationships shown in the drawings, merely to facilitate describing the embodiments of the present disclosure and to simplify the description, and do not indicate or imply that the devices or elements being referred to must have a particular orientation, be configured and operated in a particular orientation, and thus should not be construed as limiting the embodiments of the present disclosure.
It will be understood that the terms "first," "second," and the like, as used in this disclosure, may be used herein to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish one element from another element. For example, a first detection device may be referred to as a second detection device, and similarly, a second detection device may be referred to as a first detection device, without departing from the scope of the present disclosure. Both the first detection means and the second detection means are detection means, but they are not the same detection means.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present disclosure, the meaning of "a plurality" is at least two, such as two, three, etc., unless explicitly specified otherwise. In the description of the present disclosure, the meaning of "several" means at least one, such as one, two, etc., unless specifically defined otherwise.
It is to be understood that in the following embodiments, "connected" is understood to mean "electrically connected", "communicatively connected", etc., if the connected circuits, modules, units, etc., have electrical or data transfer between them.
Fig. 1 is a schematic cross-sectional view of a cmp apparatus of embodiment 1, as shown in fig. 1, in this embodiment, a cmp apparatus is provided, including: the polishing apparatus comprises a polishing disc 102, a polishing head 106, a first detecting device 110 and a control device 112, wherein the polishing disc 102 is used for bearing a polishing pad 104; the polishing head 106 is located above the polishing disc 102, and a surface of the polishing head 106, which is close to the polishing disc 102, carries a wafer 108; the polishing pad 104 is located on one side of the polishing disc 102 near the polishing head 106, and the wafer 108 is polished by the polishing pad 104, so as to achieve the purpose of flattening the surface of the wafer 108 near the polishing disc 102, and the upper side is the side of the polishing disc 102 bearing the polishing pad 104. The first detecting device 110 is disposed at an outer side of the wafer 108, and is configured to detect a thickness variation of the wafer 108, and generate a thickness difference signal according to the thickness variation, where the outer side is an edge of the wafer 108; the control device 112 is connected to the first detecting device 110, and is configured to receive the thickness difference signal, and generate a control signal according to the thickness difference signal, where the control signal is used to adjust the first distance D1 between the polishing disc 102 and the polishing head 106, so as to maintain the polishing rate of the polishing pad 104 for polishing the wafer 108.
In the cmp apparatus described above, the first detecting device 110 detects the thickness variation of the wafer 108, generates a thickness difference signal according to the thickness variation, the control device 112 receives the thickness difference signal, generates a control signal according to the thickness difference signal, and the control signal is used to adjust the first distance D1 between the polishing platen 102 and the polishing head 106, so that the polishing speed of the polishing pad 104 for polishing the wafer 108 is kept unchanged, and generates a control signal according to the thickness difference signal for adjusting the first distance D1 between the polishing platen 102 and the polishing head 106, so that the abrasion of the polishing pad 104 and the thickness variation of the wafer 108 will not affect the polishing rate of the cmp process, thereby ensuring that the polishing process of the cmp process can be performed stably.
With continued reference to fig. 1, in one embodiment, the polishing head 106 includes a base 202 and a retaining ring 204 disposed on a first surface of the base 202, wherein the retaining ring 204 is disposed on an outer side of the wafer 108, the first surface of the base 202 is a surface of the base 202 that is adjacent to the polishing pad 104 (a surface of the polishing head 106 that carries the wafer 108) and is in contact with an edge of the wafer 108, a distance between the retaining ring 204 and the polishing pad 104 is greater than a distance between the wafer 108 and the polishing pad 104, a sidewall of the retaining ring 204 and a portion of the first surface of the base 202 are inner walls of the first recess 206, the wafer 108 is disposed in the first recess 206 when the wafer 108 is carried on the polishing head 106, and a surface of the wafer 108 that is to be planarized protrudes beyond the surface of the retaining ring 204. Illustratively, the wafer 108 is held to the surface of the polishing head 106 by a vacuum suction device (not shown) extending through the susceptor 202. Optionally, a flexible buffer pad is disposed between the wafer 108 and the base 202, and sealing between the wafer 108 and the first groove 206 is achieved by the flexible buffer pad, so as to achieve the purpose of adsorbing the wafer 108. Optionally, a surface of the positioning ring 204 adjacent to the polishing pad 104 is provided with a first opening 208, and the first detecting device 110 is accommodated in the first opening 208. Illustratively, the base 202 is detachably coupled to the retaining ring 204. In other embodiments, the first detecting device 110 is located on the sidewall of the positioning ring 204 away from the first groove 206, so that the byproduct generated in the chemical mechanical polishing process is prevented from being adsorbed on the inner wall of the first opening 208 and then falling onto the polishing pad 104, which affects the normal operation of the chemical mechanical polishing process.
Optionally, the first detection device 110 includes, but is not limited to, a displacement sensor.
Fig. 2 is a schematic cross-sectional view of the cmp apparatus of embodiment 2, as shown in fig. 2, in which the cmp apparatus includes: the second detecting device 114, the second detecting device 114 is disposed outside the wafer 108, and is configured to detect an abrasion loss of the polishing pad 104, and generate an abrasion loss signal according to the abrasion loss; the control device 112 is connected to the second detection device 114, and the control device 112 is further configured to generate a control signal based on the wear signal and the thickness difference signal. By providing the second detecting device 114, the abrasion amount of the polishing pad 104 in the chemical mechanical polishing process can be detected, and a more accurate control signal can be generated according to the abrasion signal and the thickness difference signal, so that the accuracy of adjusting the first distance D1 between the polishing disc 102 and the polishing head 106 is higher, and the polishing rate of the polishing pad 104 for polishing the wafer 108 is less fluctuating.
With continued reference to FIG. 2, in one embodiment, a second opening 210 is formed in a surface of the retaining ring 204 adjacent to the polishing pad 104, and the second detecting device 114 is received in the second opening 210. In other embodiments, the second detecting device 114 is located on the sidewall of the positioning ring 204 away from the first groove 206, so that the byproduct generated in the chemical mechanical polishing process is prevented from being adsorbed on the inner wall of the second opening 210 and then falling onto the polishing pad 104, which affects the normal operation of the chemical mechanical polishing process. Optionally, the second opening 210 and the first opening 208 are formed on opposite sides of the surface of the positioning ring 204 near the polishing pad 104, so that the influence of the self weight of the first detecting device 110 and the second detecting device 114 and the installation process on the levelness of the polishing head 106 can be avoided. Optionally, the second detecting device 114 and the first detecting device 110 are located on opposite side walls of the positioning ring 204 away from the first groove 206, and by this arrangement, the influence of the self weight of the first detecting device 110 and the second detecting device 114 and the installation process on the levelness of the grinding head 106 can be avoided as well.
Optionally, the second detection device 114 includes, but is not limited to, a displacement sensor.
With continued reference to FIG. 2, in one embodiment, the chemical mechanical polishing apparatus further comprises: and the grinding disc driving device 116, wherein the grinding disc driving device 116 is connected with the control device 112 and is used for receiving the control signal generated by the control device 112 and adjusting the first interval D1 according to the control signal. Specifically, the polishing disc driving device 116 adjusts the first distance D1 by controlling the movement of the polishing disc 102 in the first direction, which is a direction perpendicular to both the polishing disc 102 and the polishing head 106, and is denoted by the Y direction in the figure, and the polishing disc driving device 116 shortens the first distance D1 by controlling the movement of the polishing disc 102 in the first direction toward the polishing head 106 as the polishing pad 104 wears and the thickness of the wafer 108 decreases during the planarization process, so as to counteract the effect of the wear of the polishing pad 104 and the thickness variation of the wafer 108 on the polishing rate.
Optionally, the abrasive disk drive 116 includes, but is not limited to, a servo motor.
With continued reference to fig. 2, in one embodiment, the cmp apparatus further includes a base 212, the polishing platen 102 is mounted on the base 212, the polishing platen drive 116 is mounted in the base 212, and the polishing platen drive 116 drives movement of the base 212 in a first direction to control movement of the polishing platen 102 in the first direction according to the control signal. Optionally, the polishing disc 102 is fixedly connected to the base 212, at this time, the polishing disc driving device 116 drives the base 212 to move in a direction approaching the polishing head 106, so as to drive the polishing disc 102 to move in a direction approaching the polishing head 106 to shorten the first distance D1, and the polishing disc driving device 116 drives the polishing disc 102 to move in a direction departing from the polishing head 106, so as to drive the polishing disc 102 to move in a direction departing from the polishing head 106 to increase the first distance D1. Optionally, the polishing disc 102 is movably connected to the base 212, at this time, the polishing disc driving device 116 drives the base 212 to move in a direction away from the polishing head 106, so that the polishing disc 102 moves in a direction close to the polishing head 106 to shorten the first distance D1, and the polishing disc driving device 116 drives the base 212 to move in a direction close to the polishing head 106, so that the polishing disc 102 moves in a direction away from the polishing head 106 to increase the first distance D1.
Optionally, a second groove 214 is formed on a surface of the polishing disc 102 carrying the polishing pad 104, and the polishing pad 104 is adsorbed onto the surface of the disc 102 by a vacuum adsorption device penetrating the polishing disc 102, where a portion of the surface of the polishing pad 104 is located at an opening of the second groove 214. Optionally, a flexible buffer pad may be disposed between the polishing pad 104 and the bottom of the second groove 214, and the polishing pad 104 and the second groove 214 are sealed by the flexible buffer pad, so as to achieve the purpose of adsorbing the polishing pad 104.
With continued reference to FIG. 2, in one embodiment, the chemical mechanical polishing apparatus further comprises: a pressure detecting device 118, the pressure detecting device 118 being configured to detect a polishing pressure between the polishing pad 104 and the wafer 108, and generate a pressure detection signal according to the polishing pressure; the control device 112 is coupled to the pressure sensing device 118 for receiving the pressure sensing signal and generating a pressure adjustment signal based on the pressure sensing signal and the thickness difference signal, the pressure adjustment signal being used to adjust the polishing pressure between the polishing pad 104 and the wafer 108 to maintain the polishing rate constant. By detecting the pressure change between the polishing pad 104 and the wafer 108, the polishing pressure between the polishing pad 104 and the wafer 108 is controlled and adjusted, so that the influence of the polishing pressure change on the polishing rate is eliminated, and the accuracy of controlling the polishing rate is improved.
In one embodiment, the pressure detection device 118 includes a pressure sensor. Alternatively, the pressure sensor is located on the sidewall of the second recess 214 and is in contact with the surface of the polishing pad 104 adjacent to the second recess 214, by which arrangement the polishing pressure between the polishing pad 104 and the wafer 108 can be accurately detected in real time.
Fig. 3 is a schematic cross-sectional view of the cmp apparatus of embodiment 3, as shown in fig. 3, in this embodiment, the cmp apparatus further includes: a speed detecting device 120, wherein the speed detecting device 120 is used for detecting the rotation speed of the grinding head 106 and generating a speed detection signal according to the rotation speed; the control device 112 is connected to the speed detecting device 120 for receiving the speed detecting signal and generating a speed adjusting signal according to the speed detecting signal, wherein the speed adjusting signal is used for adjusting the rotation speed of the polishing head 106 so as to keep the polishing rate unchanged. The rotation speed of the grinding head 106 is controlled and regulated by detecting the rotation speed of the grinding head 106, so that the influence of the change of the rotation speed of the grinding head 106 on the grinding speed is eliminated, and the accuracy of controlling the grinding speed is improved.
Optionally, the speed detection device 120 includes, but is not limited to, a speed detector, an angular speed detector.
As shown in fig. 3, in one embodiment, the chemical mechanical polishing apparatus further includes: and a polishing head driving device 122, wherein the polishing head driving device 122 is connected with the control device 112 and is used for adjusting the rotation speed of the polishing head 106 according to the speed adjusting signal.
In one embodiment, the polishing head driving device 122 is further configured to adjust the first distance D1 according to the control signal. Specifically, the polishing head driving device 122 adjusts the first distance D1 by controlling the movement of the polishing head 106 in the first direction, which is a direction perpendicular to the polishing disc 102 and the polishing head 106 at the same time, and is denoted by the Y direction in the figure, and the polishing head driving device 122 shortens the first distance D1 by controlling the movement of the polishing head 106 close to the polishing disc 102 in the first direction along with the abrasion of the polishing pad 104 and the reduction of the thickness of the wafer 108 during the planarization process, so as to counteract the influence of the abrasion of the polishing pad 104 and the thickness variation of the wafer 108 on the polishing rate.
Optionally, the polishing head drive 122 includes, but is not limited to, a servo motor.
With continued reference to fig. 3, in one embodiment, the cmp apparatus further includes a rotation shaft 216, the polishing head 106 is mounted on the rotation shaft 216, the polishing head driving device 122 is mounted in the rotation shaft 216, and the polishing head driving device 122 drives movement of the rotation shaft 216 in a first direction according to the control signal to control movement of the polishing head 106 in the first direction. Optionally, the polishing head 106 is fixedly connected to the rotation shaft 216, at this time, the polishing head driving device 122 drives the polishing head 106 to move in a direction approaching the polishing disc 102 through the rotation shaft 216 to shorten the first distance D1, and the polishing head driving device 122 drives the polishing head 106 to move in a direction departing from the polishing disc 102 to increase the first distance D1 through driving the rotation shaft 216 to move in a direction departing from the polishing disc 102. Optionally, the polishing head 106 is movably connected to the rotation shaft 216, where the polishing head driving device 122 drives the rotation shaft 216 to move away from the polishing disc 102, so that the polishing head 106 moves towards the polishing disc 102 to shorten the first distance D1, and the polishing head driving device 122 drives the rotation shaft 216 to move towards the polishing disc 102, so that the polishing head 106 moves away from the polishing disc 102 to increase the first distance D1.
Fig. 4 is a schematic cross-sectional view of the cmp apparatus of embodiment 4, as shown in fig. 4, in which the polishing head driving device 122 includes a servo motor, and the cmp apparatus further includes: an end point detection device 124, wherein the end point detection device 124 is used for detecting the current of the servo motor and generating a current detection signal according to the current; the control device 112 is connected to the endpoint detection device 124, and is further configured to determine an endpoint of the chemical mechanical polishing according to the current detection signal. When the cmp process is approaching the endpoint, the friction between the polishing pad 104 and the wafer 108 begins to change, and the current of the servo motor driving the polishing head 106 to rotate changes to ensure that the rotational speed of the polishing head 106 is unchanged, so monitoring the current of the servo motor can determine the endpoint of the cmp process. By the arrangement, the polishing can be finished at the end point of the chemical mechanical polishing, the process cost is reduced, and the chemical mechanical planarization process is automatically operated.
In one embodiment, the endpoint detection apparatus 124 further includes a photoelectric detection device, where the photoelectric detection device is configured to detect a film thickness of a preset film on the surface of the wafer 108, and generate a film thickness detection signal according to the film thickness; the control device 112 is also used for determining the endpoint of the chemical mechanical polishing according to the film thickness detection signal. The preset film is a film layer which needs to be subjected to chemical mechanical polishing for chemical mechanical planarization.
Fig. 5 is a flow chart of a method for adjusting chemical mechanical planarization in an embodiment, as shown in fig. 1 and 5, in the embodiment, a method for adjusting chemical mechanical planarization is provided, in which a chemical mechanical polishing apparatus is used to planarize a surface of a wafer 108, the chemical mechanical polishing apparatus includes a polishing disc 102 and a polishing head 106, the polishing disc 102 is used to carry a polishing pad 104, the polishing head 106 is located above the polishing disc 102, a surface of the polishing head 106 adjacent to the polishing disc 102 carries the wafer 108, and the method for adjusting chemical mechanical planarization includes:
s102, detecting thickness variation of the wafer, and generating a thickness difference signal according to the thickness variation.
Specifically, the first detecting device 110 detects the thickness variation of the wafer 108, and generates a thickness difference signal according to the thickness variation. Optionally, the first detecting device 110 is disposed on an outer side of the wafer 108, where the outer side is an edge of the wafer 108. Optionally, the first detection device 110 includes, but is not limited to, a displacement sensor.
S104, generating a control signal according to the thickness difference signal.
Specifically, the thickness difference signal is received by the control device 112 connected to the first detection device 110, and a control signal is generated according to the thickness difference signal.
S106, adjusting the first interval between the grinding disc and the grinding head according to the control signal.
Specifically, the first distance D1 between the polishing platen 102 and the polishing head 106 is adjusted according to the control signal generated by the control device 112, so that the polishing rate of the polishing pad 104 for polishing the wafer 108 is kept constant. As shown in fig. 2, the control signal generated by the control device 112 is received by the abrasive disk drive 116 and the first spacing D1 is adjusted according to the control signal, for example. Optionally, the abrasive disk drive 116 includes, but is not limited to, a servo motor. Specifically, the polishing disc driving device 116 adjusts the first distance D1 by controlling the movement of the polishing disc 102 in the first direction, which is a direction perpendicular to both the polishing disc 102 and the polishing head 106, and is denoted by the Y direction in the figure, and the polishing disc driving device 116 shortens the first distance D1 by controlling the movement of the polishing disc 102 in the first direction toward the polishing head 106 as the polishing pad 104 wears and the thickness of the wafer 108 decreases during the planarization process, so as to counteract the effect of the wear of the polishing pad 104 and the thickness variation of the wafer 108 on the polishing rate.
In the method for adjusting chemical mechanical planarization, the first distance D1 between the polishing disc 102 and the polishing head 106 is finally generated according to the thickness variation of the wafer 108, so as to maintain the constant polishing speed of the polishing pad 104 for polishing the wafer 108.
As shown in fig. 2, in one embodiment, the method of adjusting chemical mechanical planarization further includes: detecting the abrasion loss of the polishing pad and generating an abrasion signal according to the abrasion loss; specifically, the amount of wear of the polishing pad 104 is detected, and a wear signal is generated based on the amount of wear, whereby the change of the polishing pad 104 during chemical mechanical polishing can be monitored. Illustratively, the amount of wear of the polishing pad 104 is detected by the second detection device 114 and a wear signal is generated based on the amount of wear. Optionally, the second detection device 114 includes, but is not limited to, a displacement sensor. The step of generating a control signal from the thickness difference signal comprises: a control signal is generated based on the thickness difference signal and the wear signal. Specifically, the control device 112 generates a control signal according to the received wear signal and the thickness difference signal, and by detecting the wear amount of the polishing pad 104 during the chemical mechanical polishing process, a more accurate control signal can be generated according to the wear signal and the thickness difference signal, so that the accuracy of adjusting the first distance D1 between the polishing disc 102 and the polishing head 106 is higher, and the polishing rate of the polishing wafer 108 by the polishing pad 104 fluctuates less.
In one embodiment, the chemical mechanical polishing apparatus further includes a base 212, the polishing disc 102 is mounted on the base 212, and the polishing disc driving device 116 drives the base 212 to move in the first direction according to the control signal to control the polishing disc 102 to move in the first direction. Optionally, the polishing disc 102 is fixedly connected to the base 212, at this time, the polishing disc driving device 116 drives the base 212 to move in a direction approaching the polishing head 106, so as to drive the polishing disc 102 to move in a direction approaching the polishing head 106 to shorten the first distance D1, and the polishing disc driving device 116 drives the polishing disc 102 to move in a direction departing from the polishing head 106, so as to drive the polishing disc 102 to move in a direction departing from the polishing head 106 to increase the first distance D1. Optionally, the polishing disc 102 is movably connected to the base 212, at this time, the polishing disc driving device 116 drives the base 212 to move in a direction away from the polishing head 106, so that the polishing disc 102 moves in a direction close to the polishing head 106 to shorten the first distance D1, and the polishing disc driving device 116 drives the base 212 to move in a direction close to the polishing head 106, so that the polishing disc 102 moves in a direction away from the polishing head 106 to increase the first distance D1.
FIG. 6 is a flow chart of a method for adjusting chemical mechanical planarization according to another embodiment, as shown in FIG. 4 and FIG. 6, in one embodiment, the method for adjusting chemical mechanical planarization further includes:
s202, detecting the grinding pressure between the polishing pad and the wafer, and generating a pressure detection signal according to the grinding pressure.
Specifically, the polishing pressure between the polishing pad 104 and the wafer 108 is detected in real time by the pressure detecting device 118, and a pressure detection signal is generated according to the polishing pressure. Optionally, the pressure detection device 118 comprises a pressure sensor.
S204, generating a pressure regulating signal according to the pressure detection signal and the thickness difference signal.
Specifically, the control device 112 receives the pressure detection signal and generates a pressure adjustment signal based on the pressure detection signal and the thickness difference signal.
And S206, adjusting the pressure between the polishing pad and the wafer according to the pressure adjusting signal so as to keep the polishing rate unchanged.
Specifically, the polishing disc driving device 116 and/or the polishing head driving device 122 adjust the polishing pressure between the polishing pad 104 and the wafer 108 according to the pressure adjustment signal, so that the polishing rate is kept unchanged, and the polishing pressure between the polishing pad 104 and the wafer 108 is controlled and adjusted by detecting the pressure change between the polishing pad 104 and the wafer 108, so that the influence of the polishing pressure change on the polishing rate is eliminated, and the accuracy of controlling the polishing rate is improved.
FIG. 7 is a flow chart of a method for adjusting chemical mechanical planarization according to another embodiment, as shown in FIG. 4 and FIG. 7, wherein in one embodiment, the method for adjusting chemical mechanical planarization further comprises:
s302, detecting the rotation speed of the grinding head, and generating a speed detection signal according to the rotation speed.
Specifically, the rotational speed of the polishing head 106 is detected by the speed detecting device 120, and a speed detection signal is generated based on the rotational speed. Optionally, the speed detection device 120 includes, but is not limited to, a speed detector, an angular speed detector.
S304, generating a speed adjusting signal according to the speed detecting signal, wherein the speed adjusting signal is used for adjusting the rotating speed of the grinding head so as to keep the grinding speed unchanged.
Specifically, the control device 112 receives the speed detection signal and generates a speed adjustment signal for adjusting the rotational speed of the polishing head 106 so that the polishing rate remains unchanged, based on the speed detection signal. The rotation speed of the grinding head 106 is controlled and regulated by detecting the rotation speed of the grinding head 106, so that the influence of the change of the rotation speed of the grinding head 106 on the grinding speed is eliminated, and the accuracy of controlling the grinding speed is improved.
In one embodiment, the polishing head drive 122 comprises a servo motor, and the method of adjusting chemical mechanical planarization further comprises: detecting the current of the servo motor and generating a current detection signal according to the current; and determining the end point of the chemical mechanical polishing according to the current detection signal. Specifically, the current of the servo motor is detected by the end point detection device 124, and a current detection signal is generated according to the current; the control device 112 determines the endpoint of the chemical mechanical polishing based on the current detection signal. When the cmp process is approaching the endpoint, the friction between the polishing pad 104 and the wafer 108 begins to change, and the current of the servo motor driving the polishing head 106 to rotate changes to ensure that the rotational speed of the polishing head 106 is unchanged, so monitoring the current of the servo motor can determine the endpoint of the cmp process. By the arrangement, the polishing can be finished at the end point of the chemical mechanical polishing, the process cost is reduced, and the chemical mechanical planarization process is automatically operated.
In one embodiment, the endpoint detection apparatus 124 further includes a photo-detection device, and detects a film thickness of a preset film on the surface of the wafer 108 by the photo-detection device, and generates a film thickness detection signal according to the film thickness; the control device 112 determines the endpoint of the chemical mechanical polishing based on the film thickness detection signal. The preset film is a film layer which needs to be subjected to chemical mechanical polishing for chemical mechanical planarization.
The application also provides a detection device, which comprises a controller, a memory and a processor, wherein the memory stores a computer program, and the processor realizes the steps of the method for adjusting chemical mechanical planarization when executing the computer program.
It should be understood that, although the steps in the flowcharts of fig. 5, 6, and 7 are shown in order as indicated by the arrows, these steps are not necessarily performed in order as indicated by the arrows. The steps are not strictly limited to the order of execution unless explicitly recited herein, and the steps may be executed in other orders. Moreover, at least some of the steps in fig. 5, 6, and 7 may include a plurality of sub-steps or stages, which are not necessarily performed at the same time, but may be performed at different times, and the order of execution of the sub-steps or stages is not necessarily sequential, but may be performed in turn or alternately with at least some of the other steps or sub-steps of other steps.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples merely represent a few implementations of the disclosed examples, which are described in more detail and are not to be construed as limiting the scope of the application. It should be noted that it would be apparent to those skilled in the art that various modifications and improvements could be made to the disclosed embodiments without departing from the spirit of the disclosed embodiments.

Claims (10)

1. A chemical mechanical polishing apparatus, comprising:
a polishing pad for supporting a polishing pad;
the grinding head is positioned above the grinding disc, and one surface of the grinding head, which is close to the grinding disc, is provided with a wafer;
the first detection device is arranged at the outer side of the wafer and is used for detecting the thickness change of the wafer and generating a thickness difference signal according to the thickness change;
the control device is connected with the first detection device and is used for receiving the thickness difference signal and generating a control signal according to the thickness difference signal, and the control signal is used for adjusting a first interval between the grinding disc and the grinding head so as to keep the grinding rate of the wafer ground by the polishing pad unchanged.
2. The chemical mechanical polishing apparatus according to claim 1, further comprising:
the second detection device is arranged on the outer side of the wafer and is used for detecting the abrasion loss of the polishing pad and generating an abrasion signal according to the abrasion loss;
the control device is connected with the second detection device and is also used for generating the control signal according to the abrasion signal and the thickness difference signal.
3. The chemical mechanical polishing apparatus according to claim 1, further comprising:
and the grinding disc driving device is connected with the control device and is used for adjusting the first interval according to the control signal.
4. The chemical mechanical polishing apparatus according to claim 1, further comprising:
a pressure detecting device for detecting a polishing pressure between the polishing pad and the wafer and generating a pressure detection signal according to the polishing pressure;
the control device is connected with the pressure detection device and is used for receiving the pressure detection signal and generating a pressure adjustment signal according to the pressure detection signal and the thickness difference signal, and the pressure adjustment signal is used for adjusting the grinding pressure between the polishing pad and the wafer so as to keep the grinding rate unchanged.
5. The chemical mechanical polishing apparatus according to claim 1, further comprising:
a speed detecting device for detecting the rotation speed of the grinding head and generating a speed detecting signal according to the rotation speed;
the control device is connected with the speed detection device and is used for receiving the speed detection signal and generating a speed adjustment signal according to the speed detection signal, and the speed adjustment signal is used for adjusting the rotation speed of the grinding head so as to keep the grinding speed unchanged.
6. The chemical mechanical polishing apparatus as recited in claim 5, further comprising:
the grinding head driving device is connected with the control device and is used for adjusting the rotation speed of the grinding head according to the speed adjusting signal; and the first interval is also used for adjusting according to the control signal.
7. A method of adjusting chemical mechanical planarization, wherein a chemical mechanical polishing apparatus is used to planarize a surface of a wafer, the chemical mechanical polishing apparatus comprising a polishing platen and a polishing head, the polishing platen being configured to carry a polishing pad, the polishing head being positioned above the polishing platen, one surface of the polishing head adjacent to the polishing platen carrying the wafer, the method comprising:
detecting the thickness variation of the wafer, and generating a thickness difference signal according to the thickness variation;
generating a control signal according to the thickness difference signal;
and adjusting a first interval between the grinding disc and the grinding head according to the control signal so as to keep the grinding speed of the polishing pad for grinding the wafer unchanged.
8. The method as recited in claim 7, further comprising:
detecting the abrasion loss of the polishing pad and generating an abrasion signal according to the abrasion loss;
the generating a control signal from the thickness difference signal comprises:
and generating the control signal according to the thickness difference signal and the abrasion signal.
9. The method as recited in claim 7, further comprising:
detecting a polishing pressure between the polishing pad and the wafer, and generating a pressure detection signal according to the polishing pressure;
generating a pressure adjustment signal based on the pressure detection signal and the thickness difference signal;
and adjusting the pressure between the polishing pad and the wafer according to the pressure adjusting signal so as to keep the grinding rate unchanged.
10. The method as recited in claim 7, further comprising:
detecting the rotation speed of the grinding head and generating a speed detection signal according to the rotation speed;
and generating a speed adjusting signal according to the speed detecting signal, wherein the speed adjusting signal is used for adjusting the rotating speed of the grinding head so as to keep the grinding speed unchanged.
CN202310455036.8A 2023-04-25 2023-04-25 Chemical mechanical polishing apparatus and method for adjusting chemical mechanical planarization Pending CN116587158A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118219147A (en) * 2024-05-24 2024-06-21 浙江求是半导体设备有限公司 Polishing bearing table and polishing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118219147A (en) * 2024-05-24 2024-06-21 浙江求是半导体设备有限公司 Polishing bearing table and polishing method

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