CN116587010A - ICP and laser auxiliary milling device for SiC particle reinforced aluminum matrix composite - Google Patents
ICP and laser auxiliary milling device for SiC particle reinforced aluminum matrix composite Download PDFInfo
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- CN116587010A CN116587010A CN202310472580.3A CN202310472580A CN116587010A CN 116587010 A CN116587010 A CN 116587010A CN 202310472580 A CN202310472580 A CN 202310472580A CN 116587010 A CN116587010 A CN 116587010A
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- laser
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- plasma
- aluminum matrix
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- 238000003801 milling Methods 0.000 title claims abstract description 85
- 239000002245 particle Substances 0.000 title claims abstract description 30
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 28
- 239000002131 composite material Substances 0.000 title claims abstract description 26
- 239000011159 matrix material Substances 0.000 title claims abstract description 25
- 238000006243 chemical reaction Methods 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 20
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 32
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 32
- 239000007789 gas Substances 0.000 claims description 28
- 238000003754 machining Methods 0.000 claims description 12
- 125000001153 fluoro group Chemical group F* 0.000 claims description 4
- 239000012495 reaction gas Substances 0.000 claims description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 3
- 230000005284 excitation Effects 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 229910004014 SiF4 Inorganic materials 0.000 claims description 2
- 125000004429 atom Chemical group 0.000 claims description 2
- 239000007795 chemical reaction product Substances 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 claims description 2
- 238000012545 processing Methods 0.000 abstract description 46
- 238000005520 cutting process Methods 0.000 abstract description 14
- 239000011208 reinforced composite material Substances 0.000 abstract description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 37
- 238000000034 method Methods 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 238000005299 abrasion Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005485 electric heating Methods 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 238000004093 laser heating Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 230000003014 reinforcing effect Effects 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23P—METAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
- B23P25/00—Auxiliary treatment of workpieces, before or during machining operations, to facilitate the action of the tool or the attainment of a desired final condition of the work, e.g. relief of internal stress
- B23P25/003—Auxiliary treatment of workpieces, before or during machining operations, to facilitate the action of the tool or the attainment of a desired final condition of the work, e.g. relief of internal stress immediately preceding a cutting tool
- B23P25/006—Heating the workpiece by laser during machining
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23P—METAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
- B23P25/00—Auxiliary treatment of workpieces, before or during machining operations, to facilitate the action of the tool or the attainment of a desired final condition of the work, e.g. relief of internal stress
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Arc Welding In General (AREA)
Abstract
ICP and laser auxiliary milling device for SiC particle reinforced aluminum matrix composite material belongs to the technical field of hard and brittle particle reinforced composite material. The SiC particles in the SiC particle reinforced aluminum matrix composite material are chemically modified by utilizing the plasma chemical reaction, and the cutting characteristics of the aluminum matrix material are changed at high temperature generated by laser, so that high-efficiency and high-quality processing is realized. The plasma reaction environment and the laser light spot are ensured to be positioned in the area to be processed, and the surface of the workpiece is modified before the milling cutter is processed. The application adopts a laser and ICP plasma auxiliary mode. The laser-assisted cutting process is to heat and soften the material of the cutting area by laser and then to cut by using a cutter, and has many advantages in the aspects of reducing cutting force, improving processing quality and processing efficiency, and the like. The ICP plasma reaction has material selectivity, is convenient for accurately controlling the removal of SiC hard particles, is suitable for auxiliary processing, and improves the processing efficiency and the processing precision.
Description
Technical Field
The application belongs to the technical field of hard and brittle particle reinforced composite materials, and particularly relates to an ICP and laser-assisted milling device for an SiC particle reinforced aluminum-based composite material.
Background
The SiC particle reinforced aluminum matrix composite has the characteristics of high specific strength and specific rigidity, good high-temperature performance, good fatigue resistance and wear resistance, good damping performance, low thermal expansion coefficient and the like, and is widely applied to the fields of aerospace, electronics, military and the like. However, the physical properties of the matrix and the reinforcing phase are greatly different, so that the defects of unstable cutting, large cutting force, poor surface quality and the like exist during processing, and the development and the application of the composite material are restricted. Meanwhile, the requirements on the processing surface are more and more severe, and the damage of the surface layer and the subsurface layer of the material caused by the processing process is strictly limited. If the traditional ultra-precise grinding and the subsequent polishing process are adopted, the problems of long processing period, damage to the processing surface and the subsurface, low work piece qualification rate and the like exist, and the actual requirements can not be met far. In the prior art, the matrix material aluminum of the SiC particle reinforced aluminum matrix composite material is heated and softened by a laser or electric heating method, so that the material is convenient to remove and cutter abrasion is reduced, but the physicochemical characteristics of SiC in the SiC particle reinforced aluminum matrix composite material are difficult to change by the laser or electric heating method, so that the SiC in the material removal is stripped from the matrix material, the processing surface is relatively poor, and the requirement of ultra-precise processing is difficult to be met.
Disclosure of Invention
In order to eliminate the defects of unstable cutting, large cutting force, poor surface quality and the like in the processing of the aluminum-based composite material, the application further provides the ICP and laser-assisted milling device for the SiC particle reinforced aluminum-based composite material, which utilizes the plasma chemical reaction to chemically modify the SiC particles in the SiC particle reinforced aluminum-based composite material and changes the cutting characteristic of the aluminum-based material at high temperature generated by laser, thereby improving the processing efficiency, reducing the cutter abrasion and realizing the high-efficiency and high-quality processing.
The technical scheme adopted by the application is as follows:
ICP and laser auxiliary milling device for SiC particle reinforced aluminum matrix composite material, comprising an ICP plasma generating device, a laser output device, a laser source, a radio frequency power supply, a mixed plasma gas source, a milling spindle and a milling cutter; the milling cutter is arranged on the milling spindle, the ICP plasma generating device and the laser output device are both arranged on the milling spindle, the plasma reaction environment and the laser spots are ensured to be positioned in the area to be processed, the surface of a workpiece is modified before the milling cutter is processed, the radio frequency power supply is connected with the ICP plasma generating device to realize energy transmission, the mixed plasma gas source is connected with the ICP plasma generating device, and the laser source transmits laser into the laser output device.
Compared with the prior art, the application has the following beneficial effects:
1. in the high-precision milling process, high requirements are placed on machining precision and surface integrity. The application adopts a laser and ICP plasma auxiliary mode. The laser-assisted cutting process is to heat and soften a material of a cutting area by laser and then to perform cutting by using a cutter, and has many advantages in terms of reducing cutting force, improving processing quality and processing efficiency, and the like, compared with conventional processing. The ICP plasma reaction has material selectivity, is convenient for accurately controlling the removal of SiC hard particles, is suitable for auxiliary processing, improves the processing efficiency and the processing precision, and prolongs the service life of the cutter.
2. The application adopts ICP and laser to assist in processing, changes the surface property of processed materials, improves milling efficiency and milling quality, reduces cutter loss, and overcomes the defects of long processing period, poor surface quality and the like in the traditional single milling mode.
3. The ICP-inductively coupled atmospheric plasma adopted by the application has adjustable processing state, can be adjusted according to workpieces with different components and processing characteristics, and can realize material removal through chemical reactions with different degrees, which cannot be adjusted by the traditional processing mode, and the plasma generation system basically has no loss and can be continuously and repeatedly utilized.
4. The atmospheric plasma and laser auxiliary system adopted by the application is simple to manufacture and install, basically has no loss in the processing process, does not need repeated installation, effectively saves the processing time and improves the processing efficiency.
5. Compared with the auxiliary processing mode of laser or electric heating, the atmospheric plasma and laser auxiliary system can improve the processing precision, and the surface roughness RMS of the processed SiC particle reinforced aluminum matrix composite material can reach 20nm.
Drawings
FIG. 1 is a schematic diagram of the structure of the present application;
FIG. 2 is a schematic diagram of ICP processing principles;
FIG. 3 is a schematic diagram of ICP and laser-assisted milling;
wherein: 1. an ICP plasma generating device; 2. an ICP plasma generating device mounting bracket; 3. a laser output device; 4. a laser output device mounting bracket; 5. a laser source; 6. a radio frequency power supply; 7. mixing a plasma gas source; 8. milling a main shaft; 9. an ER chuck; 10. milling cutter.
Detailed Description
For a better understanding of the objects, structures and functions of the present application, reference should be made to the following detailed description of the application with reference to the accompanying drawings.
Before milling, the plasma and laser generator are added to the traditional milling spindle, and the silicon carbide component on the surface layer of the material reacts with the chemical active component in the plasma by ICP fluorine-containing plasma chemical etching to generate a product which is easy to remove, so that the milling performance of the material is improved. Meanwhile, the workpiece is locally heated to a very high temperature under the action of a laser beam, and the plasticity of the material is improved by heating the material in a short time before the material is cut off, so that the yield strength is reduced below the breaking strength, the milling force is reduced, and the cutter abrasion is reduced. And photons of the laser beam can provide partial reaction energy for the plasma to accelerate the chemical reaction of the plasma and silicon carbide;
referring to fig. 1 to 3, the ICP and laser-assisted milling device for the SiC particle reinforced aluminum matrix composite material of the present application adopts a form of plasma and laser-assisted milling. The device comprises an ICP plasma generating device 1, a laser output device 3, a laser source 5, a radio frequency power supply 6, a mixed plasma gas source 7, a milling spindle 8 and a milling cutter 10; the milling cutter 10 is normally installed on the milling spindle 8 through the ER chuck 9, the ICP plasma generating device 1 and the laser output device 3 are both installed on the milling spindle 8, the plasma reaction environment generated by the ICP plasma generating device 1 and the laser light spot emitted by the laser output device 3 are ensured to be positioned in a region to be processed, the surface of a workpiece is modified before the milling cutter 10 is processed, the cutting performance of the SiC particle reinforced aluminum matrix composite material matrix and the reinforcing body is changed simultaneously through the combined action of plasma and laser, and the processing requirements of high efficiency and high precision are realized. The principle of ICP and laser assisted milling is shown in fig. 3, and in the rotating process, the plasma reaction environment and the laser spot are kept in the same processing range at the same time and are close to the milling processing area. The radio frequency power supply 6 is arranged outside and connected with the ICP plasma generating device 1 through a radio frequency cable to realize energy transmission, the mixed plasma gas source 7 is connected with the ICP plasma generating device 1 through a gas pipe, and the laser source 5 transmits laser into the laser output device 3 through an optical fiber. The frequency of the radio frequency power supply 6 is 27.12MHz, and the maximum power is 2KW.
The material of the part to be processed is hard and brittle composite materials such as SiC particle reinforced aluminum matrix composite materials and the like.
The plasma generating mode is ICP-inductively coupled plasma excitation, which is to ionize various gases and generate plasma jet under the action of alternating magnetic field through an inductance coil and generate alternating magnetic field. As shown in fig. 2.
Further, an annular flange structure is arranged on the outer cylindrical surface of the milling spindle 8 and is used for installing the ICP plasma generating device 1 and the laser output device 3. The ICP plasma generating device 1 is mounted on the annular flange structure of the milling spindle 8 through the ICP plasma generating device mounting bracket 2, and the laser output device 3 is mounted on the annular flange structure of the milling spindle 8 through the laser output device mounting bracket 4. The annular flange structure of the milling spindle 8 can be driven to rotate by a motor in the machining process, so that the plasma reaction environment and the laser spots are positioned in front of the milling track of the milling cutter at any time. The specific driving structure is as follows: the output shaft of the motor is provided with a driving gear, the annular flange structure is provided with external teeth, the motor drives the annular flange structure to rotate through the driving gear, and meanwhile, the motor is arranged on the milling spindle 8 and synchronously moves with the milling spindle 8.
Further, the mixed plasma gas source 7 comprises a reaction gas, a plasma gas and an auxiliary gas, and is a ternary gas mixing system, and the gas supply flow is 20-100L/min.
Further, the mixed plasma gas source 7 adopts Ar as plasma excitation gas, fluorine-based gas as chemical reaction gas, O 2 As an assist gas, it is injected into the core of the ICP torch of the ICP plasma generating apparatus 1 and excited by high-energy electrons to generate active F atoms suitable for etching silicon carbide, and by the reaction between the F atoms and Si atoms on the surface of the material, volatile reaction products SiF4 are generated, leaving a surface free from damage.
SiC+CF 4 +O 2 →SiF 4 ↑+2CO↑
SiC+4F+2O→SiF 4 ↑+CO 2 ↑
Or SiC+4O.fwdarw.SiO 2 ↑+CO 2 ↑
SiO 2 +4F→SiF 4 ↑+O 2 ↑
The reaction mechanism of the plasma and the silicon-based material is shown in fig. 2.
Further, the laser source 5 is a large-spot CO 2 Pulsed laser sources.
The milling method of the application comprises the following steps:
s1, a milling device with an ICP plasma generating device 1 and a laser output device 3 is installed,
the ICP plasma generating device 1 and the laser output device 3 are arranged at the corresponding positions of the outer annular flange structure of the milling spindle 8 and are connected with corresponding circuits, gas paths and laser paths, so that the reliable and stable installation of each part is ensured;
the outer annular flange structure of the milling spindle 8 can automatically rotate. The plasma-generating device 1 and the laser output device 3 are mounted on an outer annular flange structure of the milling spindle 8. During machining, the plasma reaction area overlaps with the laser irradiation area, and has relatively fixed distribution positions with the milling cutter, and can be correspondingly adjusted along with the milling path.
The plasma and laser auxiliary processing area is always positioned in front of the milling processing area, and corresponding adjustment can be made along with the change of the milling track so as to keep the auxiliary processing area always positioned at the front end of the milling track.
S2, adjusting the ICP plasma generating device 1 and the laser output device 3, setting parameters such as ICP processing parameters and laser power, and adjusting the installation position and angle (through replaceable switching) to enable the ICP plasma generating device to meet the processing requirements: i.e. at the front end of the milling path, at a suitable distance from the milling cutter.
Setting parameters such as ICP processing parameters, laser power and the like to enable the width of a heat affected zone generated by laser on the surface of a workpiece to be 1-2 mm and the depth to be 0.3-0.5 mm; the chemical etching range of the plasma is 3-6 mm.
The mounting positions and angles of the ICP plasma generator 1 and the laser output apparatus 3 are adjusted so that the two working areas overlap, and the distance between the two working areas and the milling cutter on the machining path is always ensured to be 5-10mm.
S3, preheating and processing on the sacrificial workpiece;
and respectively starting the plasma reaction system and the laser generation system to preheat the plasma reaction system and the laser generation system for processing for a period of time, wherein the operation is performed on the sacrificial workpiece which is additionally arranged beside the plasma reaction system and the laser generation system, and starting a machine tool processing program to start processing after the processing is stable. During machining, the outer annular flange structure of the milling spindle 8 rotates to accommodate different milling trajectories when the trajectories change, as shown in fig. 3.
Before machining, setting the corners of the outer annular flange structures of the milling spindles 8 corresponding to different path points in a machine tool machining program.
S4, after machining is finished, the milling spindle 8 is moved out of the machining area to the sacrificial workpiece, the workpiece is prevented from being damaged, the plasma reaction system and the laser generation system are sequentially turned off, and the outer annular flange structure of the milling spindle 8 returns to the initial machining position, so that machining is finished. The specific function implementation of the application depends on the selection of a capacitively coupled plasma generator for the plasma generator and a carbon dioxide laser for the laser generator. The ICP machining area and the laser action area should overlap and always be located at the front end of the milling path, and maintain a constant distance from the milling cutter.
It will be understood that the application has been described in terms of several embodiments, and that various changes and equivalents may be made to these features and embodiments by those skilled in the art without departing from the spirit and scope of the application. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the application without departing from the essential scope thereof. Therefore, it is intended that the application not be limited to the particular embodiment disclosed, but that the application will include all embodiments falling within the scope of the appended claims.
Claims (9)
1. An ICP and laser auxiliary milling device for an SiC particle reinforced aluminum matrix composite material is characterized in that: the device comprises an ICP plasma generating device (1), a laser output device (3), a laser source (5), a radio frequency power supply (6), a mixed plasma gas source (7), a milling spindle (8) and a milling cutter (10); the milling cutter (10) is arranged on the milling spindle (8), the ICP plasma generating device (1) and the laser output device (3) are arranged on the milling spindle (8) and ensure that a plasma reaction environment and a laser spot are located in a region to be processed, the surface of a workpiece is modified before the milling cutter (10) is processed, the radio frequency power supply (6) is connected with the ICP plasma generating device (1) to realize energy transmission, the mixed plasma gas source (7) is connected with the ICP plasma generating device (1), and the laser source (5) transmits laser to the laser output device (3).
2. The ICP, laser-assisted milling apparatus for SiC particle reinforced aluminum matrix composites of claim 1, wherein: the milling cutter (10) is mounted on the milling spindle (8) by means of an ER cartridge (9).
3. The ICP, laser-assisted milling apparatus for SiC particle reinforced aluminum matrix composites of claim 1, wherein: an annular flange structure is arranged on the outer cylindrical surface of the milling spindle (8) and used for installing the ICP plasma generating device (1) and the laser output device (3).
4. An ICP, laser-assisted milling apparatus for SiC particle reinforced aluminum matrix composites according to claim 3, characterized in that: the ICP plasma generating device (1) is arranged on the annular flange structure of the milling spindle (8) through the ICP plasma generating device mounting bracket (2), and the laser output device (3) is arranged on the annular flange structure of the milling spindle (8) through the laser output device mounting bracket (4).
5. The ICP, laser-assisted milling apparatus for a SiC particle reinforced aluminum matrix composite according to claim 4, wherein: the annular flange structure of the milling spindle (8) can be driven to rotate by a motor in the machining process, so that the plasma reaction environment and the laser light spot are positioned in front of the milling track of the milling cutter at the moment.
6. The ICP, laser-assisted milling apparatus for SiC particle reinforced aluminum matrix composites of claim 1, wherein: the mixed plasma gas source (7) comprises reaction gas, plasma gas and auxiliary gas, is a ternary gas mixing system, and has a gas supply flow of 20-100L/min.
7. The ICP, laser-assisted milling apparatus for a SiC particle reinforced aluminum matrix composite according to claim 6, wherein: ar is adopted as plasma excitation gas, fluorine-based gas is adopted as chemical reaction gas, O is adopted as the mixed plasma gas source (7) 2 As an auxiliary gas, it is injected into the core of the ICP torch of the ICP plasma generating apparatus (1) and excited by high-energy electrons to generate active F atoms suitable for etching silicon carbide, and the reaction between the F atoms and Si atoms on the surface of the material generates a volatile reaction product SiF4, leaving a surface free from damage.
8. Aluminum for SiC particle enhancement according to claim 1ICP and laser-assisted milling device of base combined material, its characterized in that: the laser source (5) is large-facula CO 2 Pulsed laser sources.
9. The ICP, laser-assisted milling apparatus for SiC particle reinforced aluminum matrix composites of claim 1, wherein: the frequency of the radio frequency power supply (6) is 27.12MHz, and the maximum power is 2KW.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202310472580.3A CN116587010A (en) | 2023-04-27 | 2023-04-27 | ICP and laser auxiliary milling device for SiC particle reinforced aluminum matrix composite |
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CN202310472580.3A CN116587010A (en) | 2023-04-27 | 2023-04-27 | ICP and laser auxiliary milling device for SiC particle reinforced aluminum matrix composite |
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CN116587010A true CN116587010A (en) | 2023-08-15 |
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CN202310472580.3A Pending CN116587010A (en) | 2023-04-27 | 2023-04-27 | ICP and laser auxiliary milling device for SiC particle reinforced aluminum matrix composite |
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- 2023-04-27 CN CN202310472580.3A patent/CN116587010A/en active Pending
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