CN116581535A - Dual-polarized antenna with high isolation broadband and low profile and use method - Google Patents

Dual-polarized antenna with high isolation broadband and low profile and use method Download PDF

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Publication number
CN116581535A
CN116581535A CN202310791473.7A CN202310791473A CN116581535A CN 116581535 A CN116581535 A CN 116581535A CN 202310791473 A CN202310791473 A CN 202310791473A CN 116581535 A CN116581535 A CN 116581535A
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medium substrate
super
substrate
polarized antenna
dielectric substrate
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CN202310791473.7A
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Inventor
陈东旭
刘浩田
陈嘉琪
杨琬琛
曹宁
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Hohai University HHU
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Hohai University HHU
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Priority to CN202310791473.7A priority Critical patent/CN116581535A/en
Publication of CN116581535A publication Critical patent/CN116581535A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/36Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/48Earthing means; Earth screens; Counterpoises
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/50Structural association of antennas with earthing switches, lead-in devices or lightning protectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/52Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q13/00Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
    • H01Q13/08Radiating ends of two-conductor microwave transmission lines, e.g. of coaxial lines, of microstrip lines
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q13/00Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
    • H01Q13/10Resonant slot antennas
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/0006Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
    • H01Q15/0086Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02DCLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00Reducing energy consumption in communication networks
    • Y02D30/70Reducing energy consumption in communication networks in wireless communication networks

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Abstract

The invention discloses a dual polarized antenna with high isolation broadband and low profile in the field of antennas and a use method thereof, wherein the dual polarized antenna comprises an upper dielectric substrate, a middle dielectric substrate and a lower dielectric substrate which are stacked; the upper medium substrate is provided with a rectangular patch; a differential coaxial line is arranged below the rectangular patch; the differential coaxial line is used for inputting energy to the rectangular patch; the rectangular patch radiates the energy input by the differential coaxial line outwards; a super-surface structure is arranged between the upper medium substrate and the middle medium substrate; a metal floor is arranged between the middle-layer dielectric substrate and the lower-layer dielectric substrate; the metal floor is provided with a coupling gap; a feed network is arranged at the bottom of the lower medium substrate; the feed network inputs energy to the coupling gap and then radiates outwards through the super-surface structure; the dual polarization adopts slot coupling feed and differential coaxial feed respectively, so that the antenna can realize high isolation in a wider frequency band range.

Description

Dual-polarized antenna with high isolation broadband and low profile and use method
Technical Field
The invention belongs to the technical field of antennas, and particularly relates to a super-surface multiplexing high-isolation broadband low-profile dual-polarized antenna and a use method thereof.
Background
With the rapid development of communication technology, antennas with low profile, broadband, high gain and small size are becoming increasingly a research hotspot in the field of wireless communication. Conventional antennas can be generally classified into monopole antennas and dual polarized antennas. A single polarized antenna can only transmit or receive one directional polarization of electromagnetic waves, while a dual polarized antenna can simultaneously transmit or receive two directional polarizations of electromagnetic waves. In practical application, the dual-polarized antenna has the advantages of improving the reliability of communication, reducing the attenuation and distortion of signals and the like, so that the dual-polarized technology is widely applied. Although cross dipole antennas, slot antennas and patch antennas are currently available to achieve dual polarization for improved bandwidth. However, achieving high isolation, low profile, and broadband operation simultaneously is a challenge.
In addition, in recent years, a super surface structure (MS) has been widely used in antennas to improve performance due to its unique electromagnetic properties capable of modulating electromagnetic waves. Therefore, the super surface structure is also commonly used to increase the gain of the antenna, increase the bandwidth, and decrease the profile. For example, the stacking of the super surface structures and the multiplexing of the super surface structures can improve the impedance bandwidth or increase the gain to different degrees under the condition of low profile, and have great development prospect, but the methods can not realize high isolation in a wider frequency band range, which is also a technical difficulty of the current dual-polarized super surface antenna.
Disclosure of Invention
The invention aims to provide a high-isolation broadband low-profile dual-polarized antenna and a use method thereof, wherein the dual polarization adopts slot coupling feed and differential coaxial feed respectively, so that the antenna can realize high isolation in a wider frequency range.
In order to achieve the above object, the first aspect of the present invention adopts the following technical scheme:
a dual polarized antenna with high isolation broadband and low profile comprises an upper layer dielectric substrate, a middle layer dielectric substrate and a lower layer dielectric substrate which are stacked; a rectangular patch is arranged on one side of the upper medium substrate far away from the middle medium substrate; a differential coaxial line is arranged below the rectangular patch; the differential coaxial line is used for inputting energy to the rectangular patch; the differential coaxial line vertically penetrates through the upper medium substrate, the middle medium substrate and the upper medium substrate; the rectangular patch radiates the energy input by the differential coaxial line outwards;
a super-surface structure is arranged between the upper medium substrate and the middle medium substrate; a metal floor is arranged between the middle-layer dielectric substrate and the lower-layer dielectric substrate; the metal floor is provided with a coupling gap; a feed network is arranged at the bottom of the lower medium substrate; the feed network inputs energy into the coupling gap and then radiates outwards through the super-surface structure.
Preferably, the super-surface structure comprises a plurality of square metal patches, each square metal patch is distributed in a matrix, and etching gaps are formed between two adjacent square metal patches.
Preferably, the square metal patches are divided into square metal patches A and square metal patches B; the matrix units are equal to the square metal patches B in size, and the matrix units and the square metal patches B are combined to form a super-surface structure; the rectangular patches are distributed on one side of the coupling gap, and the matrix units are distributed on the other side of the coupling gap.
Preferably, the matrix unit is set to be 4 square metal patches A distributed in a 2×2 matrix; the super-surface structure is arranged into a 4 multiplied by 4 matrix consisting of matrix units and square metal patches B; the center of the coupling slit corresponds to the center of the super surface structure.
Preferably, a plurality of differential coaxial lines are arranged below the rectangular patch; the differential coaxial line is electrically connected to the rectangular patch.
Preferably, the input end of the feed network is set as a microstrip line; the output end of the feed network is rectangular, Y-shaped or fan-shaped; the perpendicular projection of the microstrip line intersects the perpendicular projection of the coupling slot.
Preferably, the width of the two ends of the coupling gap is larger than the width of the middle part of the coupling gap.
Preferably, the dielectric constants of the upper dielectric substrate, the middle dielectric substrate and the upper dielectric substrate are in the range of [1,10 ]]Thickness h of upper dielectric substrate 1 Thickness h of middle layer dielectric substrate 2 And thickness h of the lower dielectric substrate 3 In the range of [0.001 lambda ] 0 ,0.1λ 0 ];λ 0 Is a free space wavelength.
Preferably, the rectangular patch has a length a in the range of [0.08λ ] 0 ,0.3λ 0 ]Width b ranges from [0.03λ ] 0 ,0.2λ 0 ]。
Preferably, the gap width g between two adjacent square metal patches in the super-surface structure is in the range of [0.01λ ] g ,0.05λ g ]The method comprises the steps of carrying out a first treatment on the surface of the The side length d of the square metal patch B is in the range of [ 0.2lambda ] g ,0.4λ g ]Wherein lambda is g Is the effective wavelength of the medium of the upper medium substrate.
Preferably, the metal floor is arranged in a square shape; side length G of metal floor L In the range of [0.9λ ] 0 ,1.2λ 0 ]The method comprises the steps of carrying out a first treatment on the surface of the The total length of the coupling gap ranges from [0.1 lambda ] g1 ,0.6λ g1 ]The width of the coupling gap is in the range of [ 0.03lambda ] g1 ,0.4λ g1 ]Wherein lambda is g1 Is the medium effective wavelength of the medium substrate.
Preferably, the width w of the microstrip line f In the range of [0.1 lambda ] g2 ,0.5λ g2 ]The method comprises the steps of carrying out a first treatment on the surface of the The length S of the output end of the feed network along the coupling gap direction is in the range of [0.1 lambda ] g2 ,0.4λ g2 ]Output end of feed networkLength l range along microstrip line direction is [0.1λ ] g2 ,0.5λ g2 ]Wherein lambda is g2 Is the effective wavelength of the medium of the lower medium substrate.
The second aspect of the present invention provides a method for using a high-isolation broadband low-profile dual polarized antenna, comprising:
inputting energy to a rectangular patch through the differential coaxial line when horizontally polarized; the rectangular patch radiates the energy input by the differential coaxial line outwards; the super-surface structure reflects the energy radiated by the rectangular patch upwards;
when vertically polarized, the energy is input into the coupling gap through the feed network and then radiated outwards through the super-surface structure.
Compared with the prior art, the invention has the beneficial effects that:
the differential coaxial line is used for inputting energy to the rectangular patch; the rectangular patch radiates the energy input by the differential coaxial line outwards; a super-surface structure is arranged between the upper medium substrate and the middle medium substrate; a metal floor is arranged between the middle-layer dielectric substrate and the lower-layer dielectric substrate; the metal floor is provided with a coupling gap; a feed network is arranged at the bottom of the lower medium substrate; the feed network inputs energy to the coupling gap and then radiates outwards through the super-surface structure; by adopting the slot coupling feed and the differential coaxial feed, high isolation can be realized in a wider frequency range.
The matrix of the square metal patches A is distributed to form matrix units, and the square metal patches B are combined with the matrix units to form a super-surface structure; the rectangular patches are distributed on one side of the coupling gap, and the matrix units are distributed on the other side of the coupling gap; reverse current is destroyed by the matrix cells while maintaining symmetry of the pattern.
In the horizontal polarization, the energy is input to the rectangular patch through the differential coaxial line; the rectangular patch radiates the energy input by the differential coaxial line outwards; the super-surface structure reflects the energy radiated by the rectangular patch upwards; when vertically polarized, after energy is input into the coupling gap through the feed network, the energy is radiated outwards through the super-surface structure, and the super-surface structure is multiplexed, so that the section of the antenna is reduced; has the characteristics of compact size, simple structure and low processing cost, and is beneficial to mass production.
Drawings
Fig. 1 is a top view of a dual polarized antenna according to embodiment 1 of the present invention;
fig. 2 is a cross-sectional view of a dual polarized antenna provided in embodiment 1 of the present invention;
FIG. 3 is a block diagram of a metal chassis and a coupling slot provided in embodiment 1 of the present invention;
fig. 4 is a structural diagram of a feeding structure provided in embodiment 1 of the present invention;
fig. 5 is an E-plane radiation pattern of the dual polarized super surface antenna at 5.5GHz provided in embodiment 1 of the present invention;
fig. 6 is an H-plane radiation pattern of the dual polarized super surface antenna at 5.5GHz provided in embodiment 1 of the present invention;
fig. 7 is an E-plane radiation pattern of the dual polarized super surface antenna at 6.2GHz provided in embodiment 1 of the present invention;
fig. 8 is an H-plane radiation pattern of the dual polarized super surface antenna at 6.2GHz provided in embodiment 1 of the present invention;
fig. 9 is an S-parameter characteristic diagram of the dual-polarized super-surface antenna provided in embodiment 1 of the present invention;
fig. 10 is a dual polarized gain diagram of the dual polarized super surface antenna according to embodiment 1 of the present invention.
In the figure: an upper layer dielectric substrate 1, a middle layer dielectric substrate 2, a lower layer dielectric substrate 3, a rectangular patch 4, a differential coaxial line 5, a super surface structure 6, a square metal patch 7, a square metal patch 71, a square metal patch 72B, an 8 etching gap, a metal floor 9, a 10 coupling gap and a microstrip line 11.
Detailed Description
The invention is further described below with reference to the accompanying drawings. The following examples are only for more clearly illustrating the technical aspects of the present invention, and are not intended to limit the scope of the present invention.
It should be noted that, in the description of the present invention, the directions or positional relationships indicated by the terms "front", "rear", "left", "right", "upper", "lower", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and do not require that the present invention must be constructed and operated in a specific direction, and thus should not be construed as limiting the present invention. The terms "front", "back", "left", "right", "upper", "lower" as used in the description of the present invention refer to directions in the drawings, and the terms "inner", "outer" refer to directions toward or away from the geometric center of a particular component, respectively.
Example 1
As shown in fig. 1 to 4, a dual polarized antenna with high isolation and broadband and low profile comprises an upper dielectric substrate 1, a middle dielectric substrate 2 and a lower dielectric substrate 3 which are stacked; a rectangular patch 4 is arranged on one side of the upper medium substrate 1 far away from the middle medium substrate 2; a plurality of differential coaxial lines 5 are arranged below the rectangular patch 4; the differential coaxial line 5 is electrically connected to the rectangular patch 4; the differential coaxial line 5 is used for inputting energy to the rectangular patch 4; the differential coaxial line 5 vertically penetrates through the upper dielectric substrate 1, the middle dielectric substrate 2 and the lower dielectric substrate 3; the rectangular patch 4 radiates the energy input by the differential coaxial line 5 outwards;
a super surface structure 6 is arranged between the upper medium substrate 1 and the middle medium substrate 2; the super-surface structure comprises a plurality of square metal patches 7, and etching gaps 8 are formed between two adjacent square metal patches 7; the square metal patch 7 is divided into a square metal patch A71 and a square metal patch B72; the 4 square metal patches a71 distributed in the 2×2 matrix are set as matrix units, the matrix units are equal to the square metal patches B72 in size, the length d of the square metal patches B72 is equal to the length of the two square metal patches a71 plus the width of the etching gap 8, and the 4 matrix units and the 12 square metal patches B72 are combined to form the super-surface structure 6 of the 4×4 matrix.
A metal floor 9 is arranged between the middle-layer dielectric substrate 2 and the lower-layer dielectric substrate 3; the metal floor 9 is provided with a coupling gap 10, the rectangular patch 4 is distributed on one side of the coupling gap 10, and the matrix unit is distributed on the other side of the coupling gap 10; the center of the coupling slit 10 corresponds to the center of the super surface structure, and reverse current is destroyed by a matrix unit while maintaining symmetry of a pattern; the width of the two ends of the coupling slit 10 is larger than the width of the middle part of the coupling slit 10.
A feed network is arranged at the bottom of the lower medium substrate 3; the input end of the feed network is set as a microstrip line 11; the output end of the feed network is rectangular, Y-shaped or fan-shaped; the perpendicular projection of the microstrip line 11 intersects with the perpendicular projection of the coupling slit 10, and the microstrip line 11 is perpendicular to the coupling slit 10. The feed network inputs energy into the coupling gap 10 and radiates it outwards through the super-surface structure 6.
The dielectric constants of the upper dielectric substrate 1, the middle dielectric substrate 2 and the upper dielectric substrate 3 are in the range of [1,10 ]]Thickness h of upper dielectric substrate 1 1 Thickness h of middle layer dielectric substrate 2 2 And thickness h of lower dielectric substrate 3 3 In the range of [0.001 lambda ] 0 ,0.1λ 0 ];λ 0 Is a free space wavelength. The length a of the rectangular patch 4 ranges from 0.08λ 0 ,0.3λ 0 ]Width b ranges from [0.03λ ] 0 ,0.2λ 0 ]。
The width g of the long etching gap 8 between two adjacent square metal patches 7 is in the range of 0.01λ g ,0.05λ g ]The method comprises the steps of carrying out a first treatment on the surface of the The side length d of the square metal patch B72 is in the range of [ 0.2lambda ] g ,0.4λ g ]。λ g Is the effective wavelength of the medium of the upper medium substrate 1.
Side length G of metal floor 9 L In the range of [0.9λ ] 0 ,1.2λ 0 ]The method comprises the steps of carrying out a first treatment on the surface of the The total length of the coupling slit 10 is 2× (L s1 +L S2 ) The method comprises the steps of carrying out a first treatment on the surface of the The total length of the coupling slot 10 ranges from 0.1 lambda g1 ,0.6λ g1 ]Width Ws of the coupling gap 10 at its widest 1 In the range of [0.05λ ] g1 ,0.4λ g1 ]Width Ws of narrowest part 2 In the range of [ 0.03lambda ] g1 ,0.3λ g1 ]Which is provided withIn lambda, lambda g1 The effective wavelength of the medium substrate 2 is the medium effective wavelength of the medium substrate 2, and n is the number of coupling gaps 10 in the metal floor; l (L) s1 Represented by the length corresponding to the widest part of the single coupling slit 10, 2 s2 Represented by the corresponding length of the narrowest point of the single coupling slit 10.
Width w of Y-shaped microstrip line 11 f Is [0.1 lambda ] g2 ,0.5λ g2 ]The length S of the output end of the feed network along the coupling slot 10 direction is in the range of [0.1 lambda ] g2 ,0.4λ g2 ]The length l of the output end of the feed network along the direction of the microstrip line 11 is in the range of [0.1 lambda ] g2 ,0.5λ g2 ]Wherein lambda is g2 Is the dielectric effective wavelength of the underlying dielectric substrate 3.
The specific parameters in this embodiment are set as follows: thickness h of upper dielectric substrate 1 1 The thickness h of the middle layer dielectric substrate 2 is 0.254mm 2 The thickness h of the lower dielectric substrate 3 is 3.25mm 3 0.813mm; wherein the length a of the rectangular patch 4 is 15.5mm and the width b is 6mm; the width g of the strip-shaped etching gap 8 between two adjacent square metal patches 7 is 1.1mm, and the side length d of each square metal patch B72 is 8.1mm; side length G of metal floor 9 L 60mm; the total length of the coupling slit 10 opened on the metal floor is 28.9mm, and the width Ws at the widest part 1 1.6mm, corresponding length L S1 13.2mm, width Ws at the narrowest point 2 1.4mm, corresponding length L S2 The width w of the Y-shaped microstrip line 11 is 1.25mm f The feed network output length S was 7.5mm and the feed network output length l was 10mm, which was 1.85 mm.
As shown in fig. 5 to 8, the dual-polarized super-surface antenna provided in this embodiment has radiation patterns at different frequencies. The radiation direction can be kept symmetrical and the main polarization is far higher than the cross polarization when 5.5GHz and 6.2GHz are selected in the bandwidth range for observation. The dual-polarized super-surface antenna provided by the embodiment has higher gain in a larger frequency band and strong anti-interference capability.
As shown in fig. 9, the dual polarized super surface antenna S parameter characteristic diagram provided in this embodiment; it can be seen that S 11 |<The operating impedance bandwidth of-10 dB is approximately 28.4% (4.84. Mu.m.) for vertical polarization6.44 GHz), the horizontal polarization is about 38.7% (4.83-7.15 GHz). The isolation profile achieved is very high over the entire operating impedance bandwidth, with a minimum of isolation exceeding 51dB. From the above, the super-surface antenna provided by the present embodiment can effectively realize broadband and high isolation characteristics.
As shown in fig. 10, the dual polarization gain map provided in this embodiment. The gain is higher over the entire operating impedance bandwidth, the peak value for achieving vertical polarization gain is about 9.6dBi, and the peak value for achieving horizontal polarization gain is about 9.1dBi. From the above, the super-surface antenna provided by the present embodiment can effectively realize high-gain characteristics.
Example 2
The embodiment provides a method for using a high-isolation broadband low-profile dual-polarized antenna, and the method provided by the embodiment can be applied to the dual-polarized antenna in embodiment 1; the using method comprises the following steps:
inputting energy to a rectangular patch through the differential coaxial line when horizontally polarized; the rectangular patch radiates the energy input by the differential coaxial line outwards; the super-surface structure reflects the energy radiated by the rectangular patch upwards;
when vertically polarized, the energy is input into the coupling gap through the feed network and then radiated outwards through the super-surface structure.
The foregoing is merely a preferred embodiment of the present invention, and it should be noted that modifications and variations could be made by those skilled in the art without departing from the technical principles of the present invention, and such modifications and variations should also be regarded as being within the scope of the invention.

Claims (10)

1. The high-isolation broadband low-profile dual-polarized antenna is characterized by comprising an upper medium substrate, a middle medium substrate and a lower medium substrate which are stacked; a rectangular patch is arranged on one side of the upper medium substrate far away from the middle medium substrate; a differential coaxial line is arranged below the rectangular patch; the differential coaxial line is used for inputting energy to the rectangular patch; the differential coaxial line vertically penetrates through the upper medium substrate, the middle medium substrate and the upper medium substrate; the rectangular patch radiates the energy input by the differential coaxial line outwards;
a super-surface structure is arranged between the upper medium substrate and the middle medium substrate; a metal floor is arranged between the middle-layer dielectric substrate and the lower-layer dielectric substrate; the metal floor is provided with a coupling gap; a feed network is arranged at the bottom of the lower medium substrate; the feed network inputs energy into the coupling gap and then radiates outwards through the super-surface structure.
2. The high-isolation broadband low-profile dual-polarized antenna according to claim 1, wherein the super-surface structure comprises a plurality of square metal patches, each square metal patch is distributed in a matrix, and etching gaps are arranged between two adjacent square metal patches.
3. The high-isolation broadband low-profile dual polarized antenna according to claim 2, wherein the square metal patches are divided into square metal patches a and square metal patches B; the matrix units are equal to the square metal patches B in size, and the matrix units and the square metal patches B are combined to form a super-surface structure; the rectangular patches are distributed on one side of the coupling gap, and the matrix units are distributed on the other side of the coupling gap.
4. The high-isolation broadband low-profile dual-polarized antenna according to claim 1, wherein the input end of the feed network is provided as a microstrip line; the output end of the feed network is rectangular, Y-shaped or fan-shaped; the perpendicular projection of the microstrip line intersects the perpendicular projection of the coupling slot.
5. The high-isolation broadband low-profile dual polarized antenna according to claim 1, wherein the upper dielectric substrate, the middle dielectric substrate and the upper dielectric substrate have dielectric constants in the range of [1,10 ]]Upper layer mediumThickness h of the substrate 1 Thickness h of middle layer dielectric substrate 2 And thickness h of the lower dielectric substrate 3 In the range of [0.001 lambda ] 0 ,0.1λ 0 ];λ 0 Is a free space wavelength.
6. The high isolation broadband low profile dual polarized antenna of claim 1, wherein the rectangular patch has a length a in the range of 0.08λ 0 ,0.3λ 0 ]Width b ranges from [0.03λ ] 0 ,0.2λ 0 ]。
7. A high isolation broadband low profile dual polarized antenna according to claim 3, wherein the gap width g between two adjacent square metal patches in the super surface structure is in the range of [0.01λ ] g ,0.05λ g ]The method comprises the steps of carrying out a first treatment on the surface of the The side length d of the square metal patch B is in the range of [ 0.2lambda ] g ,0.4λ g ]Wherein lambda is g Is the effective wavelength of the medium of the upper medium substrate.
8. The high isolation broadband low profile dual polarized antenna of claim 1, wherein said metal floor is square; side length G of metal floor L In the range of [0.9λ ] 0 ,1.2λ 0 ]The method comprises the steps of carrying out a first treatment on the surface of the The total length of the coupling gap ranges from [0.1 lambda ] g1 ,0.6λ g1 ]The width of the coupling gap is in the range of [ 0.03lambda ] g1 ,0.4λ g1 ]Wherein lambda is g1 Is the medium effective wavelength of the medium substrate.
9. The high isolation broadband low profile dual polarized antenna of claim 4, wherein said microstrip line has a width w f In the range of [0.1 lambda ] g2 ,0.5λ g2 ]The method comprises the steps of carrying out a first treatment on the surface of the The length S of the output end of the feed network along the coupling gap direction is in the range of [0.1 lambda ] g2 ,0.4λ g2 ]The length l of the output end of the feed network along the microstrip line direction is [0.1 lambda ] g2 ,0.5λ g2 ]Wherein lambda is g2 Is the effective wavelength of the medium of the lower medium substrate.
10. Use of a dual polarized antenna according to any of claims 1 to 9, comprising:
inputting energy to a rectangular patch through the differential coaxial line when horizontally polarized; the rectangular patch radiates the energy input by the differential coaxial line outwards; the super-surface structure reflects the energy radiated by the rectangular patch upwards;
when vertically polarized, the energy is input into the coupling gap through the feed network and then radiated outwards through the super-surface structure.
CN202310791473.7A 2023-06-30 2023-06-30 Dual-polarized antenna with high isolation broadband and low profile and use method Pending CN116581535A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117060065A (en) * 2023-09-13 2023-11-14 南京林业大学 Millimeter wave super-surface antenna
CN117676786A (en) * 2023-11-03 2024-03-08 威胜集团有限公司 Smart electric meter wireless communication antenna radiation direction constraint method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117060065A (en) * 2023-09-13 2023-11-14 南京林业大学 Millimeter wave super-surface antenna
CN117060065B (en) * 2023-09-13 2024-05-17 南京林业大学 Millimeter wave super-surface antenna
CN117676786A (en) * 2023-11-03 2024-03-08 威胜集团有限公司 Smart electric meter wireless communication antenna radiation direction constraint method

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