CN116580870A - Photovoltaic silver paste and preparation method and application thereof - Google Patents
Photovoltaic silver paste and preparation method and application thereof Download PDFInfo
- Publication number
- CN116580870A CN116580870A CN202310764980.1A CN202310764980A CN116580870A CN 116580870 A CN116580870 A CN 116580870A CN 202310764980 A CN202310764980 A CN 202310764980A CN 116580870 A CN116580870 A CN 116580870A
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- CN
- China
- Prior art keywords
- silver paste
- oxide
- photovoltaic
- hydroxide
- alloy
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 155
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 66
- 239000004332 silver Substances 0.000 title claims abstract description 66
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000002019 doping agent Substances 0.000 claims abstract description 55
- 239000002245 particle Substances 0.000 claims abstract description 45
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- 238000002844 melting Methods 0.000 claims abstract description 16
- 230000008018 melting Effects 0.000 claims abstract description 15
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 12
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 12
- 229910000000 metal hydroxide Inorganic materials 0.000 claims abstract description 10
- 150000004692 metal hydroxides Chemical class 0.000 claims abstract description 10
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 39
- 239000003795 chemical substances by application Substances 0.000 claims description 27
- 239000002904 solvent Substances 0.000 claims description 22
- 239000003822 epoxy resin Substances 0.000 claims description 15
- 229920000647 polyepoxide Polymers 0.000 claims description 15
- 229920005989 resin Polymers 0.000 claims description 14
- 239000011347 resin Substances 0.000 claims description 14
- 229910003437 indium oxide Inorganic materials 0.000 claims description 9
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910001152 Bi alloy Inorganic materials 0.000 claims description 8
- 229910052797 bismuth Inorganic materials 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 claims description 7
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 7
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 6
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 claims description 6
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 claims description 6
- JJLJMEJHUUYSSY-UHFFFAOYSA-L Copper hydroxide Chemical compound [OH-].[OH-].[Cu+2] JJLJMEJHUUYSSY-UHFFFAOYSA-L 0.000 claims description 5
- 239000005750 Copper hydroxide Substances 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- 229910000846 In alloy Inorganic materials 0.000 claims description 5
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 5
- 229910001956 copper hydroxide Inorganic materials 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 229910000464 lead oxide Inorganic materials 0.000 claims description 5
- 229910021514 lead(II) hydroxide Inorganic materials 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 5
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims description 5
- 229910001392 phosphorus oxide Inorganic materials 0.000 claims description 5
- VSAISIQCTGDGPU-UHFFFAOYSA-N tetraphosphorus hexaoxide Chemical compound O1P(O2)OP3OP1OP2O3 VSAISIQCTGDGPU-UHFFFAOYSA-N 0.000 claims description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 5
- 229910001887 tin oxide Inorganic materials 0.000 claims description 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 4
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 4
- 229910052793 cadmium Inorganic materials 0.000 claims description 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 4
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 claims description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 4
- 229910052753 mercury Inorganic materials 0.000 claims description 4
- 238000003756 stirring Methods 0.000 claims description 4
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims description 3
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 claims description 3
- 229920000178 Acrylic resin Polymers 0.000 claims description 3
- 239000004925 Acrylic resin Substances 0.000 claims description 3
- 229910000497 Amalgam Inorganic materials 0.000 claims description 3
- 229910000925 Cd alloy Inorganic materials 0.000 claims description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 3
- 239000005751 Copper oxide Substances 0.000 claims description 3
- 229910001279 Dy alloy Inorganic materials 0.000 claims description 3
- 229910000807 Ga alloy Inorganic materials 0.000 claims description 3
- 229910000978 Pb alloy Inorganic materials 0.000 claims description 3
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 claims description 3
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 claims description 3
- 229920003180 amino resin Polymers 0.000 claims description 3
- 150000008064 anhydrides Chemical class 0.000 claims description 3
- SZOADBKOANDULT-UHFFFAOYSA-K antimonous acid Chemical compound O[Sb](O)O SZOADBKOANDULT-UHFFFAOYSA-K 0.000 claims description 3
- 229910000410 antimony oxide Inorganic materials 0.000 claims description 3
- 229940049676 bismuth hydroxide Drugs 0.000 claims description 3
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 3
- TZSXPYWRDWEXHG-UHFFFAOYSA-K bismuth;trihydroxide Chemical compound [OH-].[OH-].[OH-].[Bi+3] TZSXPYWRDWEXHG-UHFFFAOYSA-K 0.000 claims description 3
- PLLZRTNVEXYBNA-UHFFFAOYSA-L cadmium hydroxide Chemical compound [OH-].[OH-].[Cd+2] PLLZRTNVEXYBNA-UHFFFAOYSA-L 0.000 claims description 3
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 claims description 3
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 claims description 3
- 229910000431 copper oxide Inorganic materials 0.000 claims description 3
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 claims description 3
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 claims description 3
- 229940112669 cuprous oxide Drugs 0.000 claims description 3
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 claims description 3
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 3
- JDVIRCVIXCMTPU-UHFFFAOYSA-N ethanamine;trifluoroborane Chemical compound CCN.FB(F)F JDVIRCVIXCMTPU-UHFFFAOYSA-N 0.000 claims description 3
- 150000002460 imidazoles Chemical class 0.000 claims description 3
- IGUXCTSQIGAGSV-UHFFFAOYSA-K indium(iii) hydroxide Chemical compound [OH-].[OH-].[OH-].[In+3] IGUXCTSQIGAGSV-UHFFFAOYSA-K 0.000 claims description 3
- 235000014413 iron hydroxide Nutrition 0.000 claims description 3
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 3
- NCNCGGDMXMBVIA-UHFFFAOYSA-L iron(ii) hydroxide Chemical compound [OH-].[OH-].[Fe+2] NCNCGGDMXMBVIA-UHFFFAOYSA-L 0.000 claims description 3
- 239000012948 isocyanate Substances 0.000 claims description 3
- 150000002513 isocyanates Chemical class 0.000 claims description 3
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 3
- FXADMRZICBQPQY-UHFFFAOYSA-N orthotelluric acid Chemical compound O[Te](O)(O)(O)(O)O FXADMRZICBQPQY-UHFFFAOYSA-N 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- NDLPOXTZKUMGOV-UHFFFAOYSA-N oxo(oxoferriooxy)iron hydrate Chemical compound O.O=[Fe]O[Fe]=O NDLPOXTZKUMGOV-UHFFFAOYSA-N 0.000 claims description 3
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 claims description 3
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 3
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 claims description 3
- 229920001225 polyester resin Polymers 0.000 claims description 3
- 239000004645 polyester resin Substances 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 229910001923 silver oxide Inorganic materials 0.000 claims description 3
- UKHWJBVVWVYFEY-UHFFFAOYSA-M silver;hydroxide Chemical compound [OH-].[Ag+] UKHWJBVVWVYFEY-UHFFFAOYSA-M 0.000 claims description 3
- 229910052714 tellurium Inorganic materials 0.000 claims description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 3
- 229940116411 terpineol Drugs 0.000 claims description 3
- CVNKFOIOZXAFBO-UHFFFAOYSA-J tin(4+);tetrahydroxide Chemical compound [OH-].[OH-].[OH-].[OH-].[Sn+4] CVNKFOIOZXAFBO-UHFFFAOYSA-J 0.000 claims description 3
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 claims description 2
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 claims description 2
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 claims description 2
- 238000000034 method Methods 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 abstract description 10
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 239000000126 substance Substances 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 3
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 18
- 230000000052 comparative effect Effects 0.000 description 18
- 229910045601 alloy Inorganic materials 0.000 description 10
- 239000000956 alloy Substances 0.000 description 10
- 239000002994 raw material Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 6
- JWVAUCBYEDDGAD-UHFFFAOYSA-N bismuth tin Chemical compound [Sn].[Bi] JWVAUCBYEDDGAD-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- KHZAWAWPXXNLGB-UHFFFAOYSA-N [Bi].[Pb].[Sn] Chemical compound [Bi].[Pb].[Sn] KHZAWAWPXXNLGB-UHFFFAOYSA-N 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- PAAZPARNPHGIKF-UHFFFAOYSA-N 1,2-dibromoethane Chemical compound BrCCBr PAAZPARNPHGIKF-UHFFFAOYSA-N 0.000 description 1
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- SYEOWUNSTUDKGM-YFKPBYRVSA-N 3-methyladipic acid Chemical compound OC(=O)C[C@@H](C)CCC(O)=O SYEOWUNSTUDKGM-YFKPBYRVSA-N 0.000 description 1
- UDSFAEKRVUSQDD-UHFFFAOYSA-N Dimethyl adipate Chemical compound COC(=O)CCCCC(=O)OC UDSFAEKRVUSQDD-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- WYWUBDZUGFHUML-UHFFFAOYSA-N butanedioic acid dimethyl butanedioate Chemical compound OC(=O)CCC(O)=O.COC(=O)CCC(=O)OC WYWUBDZUGFHUML-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- XTDYIOOONNVFMA-UHFFFAOYSA-N dimethyl pentanedioate Chemical compound COC(=O)CCCC(=O)OC XTDYIOOONNVFMA-UHFFFAOYSA-N 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 230000009916 joint effect Effects 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Dispersion Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Conductive Materials (AREA)
Abstract
The application provides a photovoltaic silver paste and a preparation method and application thereof. The photovoltaic silver paste comprises conductive silver paste and a doping agent; the dopant comprises at least one of metal oxide, metal hydroxide, and low melting point metal; the doping agent is added into the conventional conductive silver paste formula, and the doping agent is added into a substance which can react and fuse with the TCO layer of the heterojunction photovoltaic cell slice, so that the doping agent slightly damages the surface structure of the indium tin oxide by reacting, doping or rearranging with the indium tin oxide of the conventional TCO layer material at the temperature of about 200 ℃, and the added doping agent can overlap with silver powder with a larger specific area due to the property of small particles, so that the contact between the silver paste and the TCO layer is greatly improved. The photovoltaic silver paste reduces the influence of ohmic contact under the condition of less influence on resistivity, so that the current of a heterojunction photovoltaic cell is better collected, and better photoelectric conversion efficiency is provided.
Description
Technical Field
The application relates to the technical field of conductive silver paste, in particular to photovoltaic silver paste, and a preparation method and application thereof.
Background
The photovoltaic cell slice is used as a core raw material of photovoltaic power generation and plays a core role of photoelectric conversion. In the solar cell, besides silicon, the most important conductive material is silver paste, the advantages and disadvantages of the silver paste directly influence the current collection efficiency, and the resistivity and the ohmic contact are the most critical factors for evaluating whether the silver paste is matched with the photovoltaic cell.
The traditional high-temperature silver paste can puncture a silicon wafer under high temperature by the combined action of silver powder, aluminum powder and glass powder, so that a very direct conductive circuit is formed, and better ohmic contact is formed. The final curing temperature of the low-temperature photovoltaic silver paste is low, so that sintering conditions of silver powder, aluminum powder and glass powder are not met, and the current main stream is the shrinkage of resin to form very weak ohmic contact performance. This is also why conventional low temperature silver paste ohmic contacts are poor.
Based on the defects of the current conductive silver paste for photovoltaic cells, improvement is needed.
Disclosure of Invention
In view of the above, the application provides a photovoltaic silver paste, a preparation method and application thereof, so as to solve the technical problems in the prior art.
In a first aspect, the application provides a photovoltaic silver paste comprising the following components: conductive silver paste and dopant;
wherein the dopant comprises at least one of a metal oxide, a metal hydroxide, and a low melting point metal.
Preferably, the metal oxide comprises at least one of aluminum oxide, silicon oxide, phosphorus oxide, nickel oxide, copper oxide, cuprous oxide, ferric oxide, tellurium oxide, cadmium oxide, tin oxide, indium oxide, antimony oxide, silver oxide, lead oxide and bismuth oxide.
Preferably, the metal hydroxide comprises at least one of aluminum hydroxide, iron hydroxide, copper hydroxide, tellurium hydroxide, cadmium hydroxide, tin hydroxide, indium hydroxide, antimony hydroxide, silver hydroxide, lead hydroxide, bismuth hydroxide.
Preferably, the low-melting point metal comprises at least one of mercury, gallium, indium, tin, bismuth, lead, cadmium, dysprosium, amalgam, gallium alloy, indium alloy, tin alloy, bismuth alloy, lead alloy, cadmium alloy and dysprosium alloy.
Preferably, the mass of the doping agent of the photovoltaic silver paste is 0.05-5% of the mass of the conductive silver paste.
Preferably, the particle size of the doping agent of the photovoltaic silver paste is 10-1000 nm.
Preferably, the photovoltaic silver paste, the conductive silver paste comprises: silver powder, resin, solvent and curing agent;
the resin comprises at least one of epoxy resin, polyester resin and acrylic resin;
and/or the solvent comprises at least one of DBE, ethylene glycol diethyl ether acetate, ethylene glycol butyl ether acetate, diethylene glycol diethyl ether acetate, diethylene glycol butyl ether and terpineol;
and/or the curing agent comprises at least one of a self-blocked isocyanate curing agent, a phthalate, a silane coupling agent, dicyandiamide, modified dicyandiamide, imidazole, modified imidazole, anhydride, boron trifluoride monoethylamine, and an amino resin.
Preferably, the mass ratio of the silver powder to the resin to the solvent to the curing agent is (80-100), the mass ratio of the silver powder to the resin to the curing agent is (5-10), the mass ratio of the silver powder to the resin to the curing agent is (8-15), and the mass ratio of the silver powder to the curing agent is (1-5).
In a second aspect, the application also provides a preparation method of the photovoltaic silver paste, which comprises the following steps: mixing silver powder, resin, solvent, curing agent and doping agent, and stirring to obtain the photovoltaic silver paste.
In a third aspect, the application also provides an application of the photovoltaic silver paste or the photovoltaic silver paste prepared by the preparation method in a photovoltaic cell.
The photovoltaic silver paste and the preparation method and application thereof have the following beneficial effects:
the photovoltaic silver paste comprises conductive silver paste and a doping agent; the dopant comprises at least one of metal oxide, metal hydroxide, and low melting point metal; the doping agent is added into the conventional conductive silver paste formula, and the doping agent is added into a substance which can react and fuse with the TCO layer of the heterojunction photovoltaic cell slice, so that the doping agent slightly damages the surface structure of the indium tin oxide by reacting, doping or rearranging with the indium tin oxide of the conventional TCO layer material at the temperature of about 200 ℃, and the added doping agent can overlap with silver powder with a larger specific area due to the property of small particles, so that the contact between the silver paste and the TCO layer is greatly improved. The photovoltaic silver paste reduces the influence of ohmic contact under the condition of less influence on resistivity, so that the current of a heterojunction photovoltaic cell is better collected, and better photoelectric conversion efficiency is provided.
Detailed Description
For the purposes of making the objects, technical solutions and advantages of the embodiments of the present application more apparent, the technical solutions in the embodiments of the present application will be clearly and completely described in the following in conjunction with the embodiments of the present application, and it is apparent that the described embodiments are only some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present application without making any inventive effort, are intended to fall within the scope of the present application.
The following description of the embodiments is not intended to limit the preferred embodiments. In addition, in the description of the present application, the term "comprising" means "including but not limited to". Various embodiments of the application may exist in a range of forms; it should be understood that the description in a range format is merely for convenience and brevity and should not be construed as a rigid limitation on the scope of the application; it is therefore to be understood that the range description has specifically disclosed all possible sub-ranges and individual values within that range. For example, it should be considered that a description of a range from 1 to 6 has specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the ranges, such as 1, 2, 3, 4, 5, and 6, wherever applicable. In addition, whenever a numerical range is referred to herein, it is meant to include any reference number (fractional or integer) within the indicated range.
The application provides photovoltaic silver paste, which comprises the following components: conductive silver paste and dopant;
wherein the dopant comprises at least one of a metal oxide, a metal hydroxide, and a low melting point metal.
The photovoltaic silver paste disclosed by the application is characterized in that the doping agent is added into a conventional conductive silver paste formula, the doping agent comprises at least one of metal oxide, metal hydroxide and low-melting-point metal, and the doping agent is added into a substance which can react and fuse with the TCO layer of the heterojunction photovoltaic cell, and the doping or rearrangement of the TCO layer is formed under the action of the temperature of about 200 ℃ so as to improve the lap joint effect of the doping agent and the silver powder in the silver paste, thereby improving the ohmic contact of the silver paste. In the photovoltaic silver paste, in the whole formula, the key point is the additional doping agent, so that the photovoltaic silver paste reacts, dopes or rearranges with the conventional TCO layer material indium tin oxide to a certain extent at 200 ℃, the surface structure of the indium tin oxide is slightly damaged, and the added doping agent can overlap with silver powder with a larger specific area due to the property of small particles, so that the contact between the silver paste and the TCO layer is greatly improved.
The conductive silver paste is conventional low-temperature photovoltaic silver paste, and comprises conventional formula combinations and proportions of silver powder, epoxy resin, curing agent, rheological agent, solvent and the like, and specific components of the conductive silver paste are not described herein.
In some embodiments, the core principle of the dopant is to select a substance that can react with or dope indium tin oxide, generally comprising at least one of a metal oxide, a metal hydroxide, a low melting point metal; wherein the metal oxide comprises at least one of aluminum oxide, silicon oxide, phosphorus oxide, nickel oxide, copper oxide, cuprous oxide, ferric oxide, tellurium oxide, cadmium oxide, tin oxide, indium oxide, antimony oxide, silver oxide, lead oxide and bismuth oxide; these metal oxides can react with indium tin oxide at a certain temperature.
In some embodiments, the metal hydroxide comprises at least one of aluminum hydroxide, iron hydroxide, copper hydroxide, tellurium hydroxide, cadmium hydroxide, tin hydroxide, indium hydroxide, antimony hydroxide, silver hydroxide, lead hydroxide, bismuth hydroxide.
In some embodiments, the low melting point metal comprises at least one of mercury, gallium, indium, tin, bismuth, lead, cadmium, dysprosium, amalgam, gallium alloy, indium alloy, tin alloy, bismuth alloy, lead alloy, cadmium alloy, dysprosium alloy; that is, the low melting point metal includes metals such as mercury, gallium, indium, tin, bismuth, lead, cadmium, dysprosium, and the like, and also includes alloys of the above metals.
Specifically, the tin-bismuth alloy may be Sn 99 Bi 1 Alloy, sn 99.5 Bi 0.5 The alloy, bismuth-lead-tin alloy can be Bi 50 Pb 30 Sn 20 The alloy, bismuth, lead, tin, gallium and indium can be Bi 50 Pb 25 Sn 10 Ga 10 In 5 And (3) alloy.
In some embodiments, the mass of the dopant is 0.05-5% of the mass of the conductive silver paste, the doping of the TCO layer is difficult due to the too small amount of the dopant, the resistivity of the whole silver paste is affected due to the too large amount of the dopant, particularly the original resistivity is too large, and the final photoelectric conversion efficiency is affected due to the too large resistivity when the ohmic contact is good.
In some embodiments, the particle size of the dopant is 10-1000 nm, too small particle size can cause serious agglomeration and cannot exert doping effect, too large particle size can cause too small specific surface area and cannot exert doping effect, and large particle size can hardly sink near pyramid on the surface of the silicon wafer and cannot exert doping effect.
In some embodiments, the conductive silver paste includes: silver powder, resin, solvent and curing agent.
In some embodiments, the resin comprises at least one of an epoxy resin, a polyester resin, an acrylic resin; preferably, the resin is an epoxy resin, and more preferably a bisphenol a type epoxy resin.
In some embodiments, the solvent comprises at least one of DBE, ethylene glycol ethyl ether acetate, ethylene glycol butyl ether acetate, diethylene glycol ethyl ether acetate, diethylene glycol butyl ether, terpineol, preferably DBE, DBE solvent (dupont named DBE), is composed of three dibasic acidsThe mixture of esters, commonly known as methyl nylon acid, is composed of dimethyl succinate (succinic acid) CH 3 OOC(CH 2 ) 2 COOCH 3 Dimethyl glutarate CH 3 OOC(CH 2 ) 3 COOCH 3 And dimethyl adipate CH 3 OOC(CH 2 ) 4 COOCH 3 A combination of three good environmental solvents.
In some embodiments, the curing agent comprises at least one of a self-blocked isocyanate curing agent, phthalate, silane coupling agent, dicyandiamide, modified dicyandiamide, imidazole, modified imidazole, anhydride, boron trifluoride monoethylamine, and an amino resin, preferably imidazole.
In some embodiments, the mass ratio of silver powder, resin, solvent and curing agent is (80-100): (5-10): (8-15): (1-5).
In some embodiments, the silver powder has an average particle size of 1 to 5 μm.
Based on the same inventive concept, the application also provides a preparation method of the photovoltaic silver paste, which comprises the following steps: and mixing the conductive silver paste with the doping agent, and stirring to obtain the photovoltaic silver paste.
In some embodiments, the photovoltaic silver paste is obtained by mixing the conductive silver paste and the doping agent, and stirring and uniformly mixing the mixture to the fineness of less than 15 mu m through a dispersing machine.
Based on the same inventive concept, the application also provides application of the photovoltaic silver paste or the photovoltaic silver paste prepared by the preparation method in a photovoltaic cell.
The photovoltaic silver paste, the preparation method and the application thereof are further described in the following specific examples. This section further illustrates the summary of the application in connection with specific embodiments, but should not be construed as limiting the application. The technical means employed in the examples are conventional means well known to those skilled in the art, unless specifically stated. Unless specifically stated otherwise, the reagents, methods and apparatus employed in the present application are those conventional in the art.
Example 1
The embodiment of the application provides photovoltaic silver paste, which comprises the following components: conductive silver paste and dopant;
the conductive silver paste comprises the following raw materials in parts by weight: 45 parts by weight of silver powder with an average particle size of 5 mu m, 45 parts by weight of silver powder with an average particle size of 1 mu m, 8 parts by weight of bisphenol A type epoxy resin, 2 parts by weight of imidazole curing agent and 10 parts by weight of DBE solvent;
the dopant includes: phosphorus oxide having an average particle diameter of 100nm and metallic indium particles having an average particle diameter of 100 nm;
wherein the mass of the phosphorus oxide is 0.5% of the mass of the conductive silver paste, and the mass of the metal indium particles is 0.5% of the mass of the conductive silver paste.
Example 2
The embodiment of the application provides photovoltaic silver paste, which comprises the following components: conductive silver paste and dopant;
the conductive silver paste comprises the following raw materials in parts by weight: 45 parts by weight of silver powder with an average particle size of 5 mu m, 45 parts by weight of silver powder with an average particle size of 1 mu m, 8 parts by weight of bisphenol A type epoxy resin, 2 parts by weight of imidazole curing agent and 10 parts by weight of DBE solvent;
the dopant includes: copper hydroxide having an average particle diameter of 25nm and tin oxide having an average particle diameter of 50 nm;
wherein the mass of copper hydroxide is 0.1% of the mass of the conductive silver paste, and the mass of tin oxide is 1.2% of the mass of the conductive silver paste.
Example 3
The embodiment of the application provides photovoltaic silver paste, which comprises the following components: conductive silver paste and dopant;
the conductive silver paste comprises the following raw materials in parts by weight: 45 parts by weight of silver powder with an average particle size of 5 mu m, 45 parts by weight of silver powder with an average particle size of 1 mu m, 8 parts by weight of bisphenol A type epoxy resin, 2 parts by weight of imidazole curing agent and 10 parts by weight of DBE solvent;
the dopant includes: indium oxide having an average particle diameter of 10nm, lead hydroxide having an average particle diameter of 50nm, and tin-bismuth alloy (specifically, sn) having an average particle diameter of 400nm 99 Bi 1 Alloy, the mole ratio of Sn and Bi is 99:1);
wherein the mass of the indium oxide is 0.3% of the mass of the conductive silver paste, the mass of the lead hydroxide is 0.3% of the mass of the conductive silver paste, and the mass of the tin-bismuth alloy is 0.3% of the mass of the conductive silver paste.
Example 4
The embodiment of the application provides photovoltaic silver paste, which comprises the following components: conductive silver paste and dopant;
the conductive silver paste comprises the following raw materials in parts by weight: 45 parts by weight of silver powder with an average particle size of 5 mu m, 45 parts by weight of silver powder with an average particle size of 1 mu m, 8 parts by weight of bisphenol A type epoxy resin, 2 parts by weight of imidazole curing agent and 10 parts by weight of DBE solvent;
the dopant includes: bismuth lead tin alloy (specifically Bi) having an average particle diameter of 200nm 50 Pb 30 Sn 20 Alloy, molar ratio of Bi, pb and Sn is 50:30:20), and bismuth-lead-tin-gallium-indium alloy having an average particle diameter of 50nm (specifically Bi 50 Pb 25 Sn 10 Ga 10 In 5 Alloy, molar ratio of Bi, pb, sn, ga to In is 50:25:10:10:5);
wherein the mass of the bismuth-lead-tin alloy is 0.5% of the mass of the conductive silver paste, and the mass of the bismuth-lead-tin-gallium-indium alloy is 1% of the mass of the conductive silver paste.
Example 5
The embodiment of the application provides photovoltaic silver paste, which comprises the following components: conductive silver paste and dopant;
the conductive silver paste comprises the following raw materials in parts by weight: 45 parts by weight of silver powder with an average particle size of 5 mu m, 45 parts by weight of silver powder with an average particle size of 1 mu m, 8 parts by weight of bisphenol A type epoxy resin, 2 parts by weight of imidazole curing agent and 10 parts by weight of DBE solvent;
the dopant includes: indium oxide having an average particle diameter of 10nm and tin-bismuth alloy having an average particle diameter of 10nm (specifically, sn 99.5 Bi 0.5 Alloy, molar ratio of Sn to Bi of 99.5:0.5);
wherein the mass of the indium oxide is 0.05% of the mass of the conductive silver paste, and the mass of the tin-bismuth alloy is 0.15% of the mass of the conductive silver paste.
Comparative example 1
The comparative example provides a photovoltaic silver paste, which comprises the following raw materials in parts by weight: 45 parts by weight of silver powder with an average particle size of 5 μm, 45 parts by weight of silver powder with an average particle size of 1 μm, 8 parts by weight of bisphenol A type epoxy resin, 2 parts by weight of imidazole curing agent and 10 parts by weight of DBE solvent.
Comparative example 2
This comparative example provides a photovoltaic silver paste comprising the following components: conductive silver paste and dopant;
the conductive silver paste comprises the following raw materials in parts by weight: 45 parts by weight of silver powder with an average particle size of 5 mu m, 45 parts by weight of silver powder with an average particle size of 1 mu m, 8 parts by weight of bisphenol A type epoxy resin, 2 parts by weight of imidazole curing agent and 10 parts by weight of DBE solvent;
the dopant is indium oxide with an average particle size of 10 nm;
wherein the mass of the indium oxide is 15% of the mass of the conductive silver paste.
Comparative example 3
This comparative example provides a photovoltaic silver paste comprising the following components: conductive silver paste and dopant;
the conductive silver paste comprises the following raw materials in parts by weight: 45 parts by weight of silver powder with an average particle size of 5 mu m, 45 parts by weight of silver powder with an average particle size of 1 mu m, 8 parts by weight of bisphenol A type epoxy resin, 2 parts by weight of imidazole curing agent and 10 parts by weight of DBE solvent;
the dopant is lead oxide with an average particle size of 15 mu m;
wherein the mass of the lead oxide is 1.5 percent of the mass of the conductive silver paste.
Comparative example 4
This comparative example provides a photovoltaic silver paste comprising the following components: conductive silver paste and dopant;
the conductive silver paste comprises the following raw materials in parts by weight: 45 parts by weight of silver powder with an average particle size of 5 mu m, 45 parts by weight of silver powder with an average particle size of 1 mu m, 8 parts by weight of bisphenol A type epoxy resin, 2 parts by weight of imidazole curing agent and 10 parts by weight of DBE solvent;
the doping agent is metal tin powder with the average grain diameter of 5 mu m;
wherein the mass of the tin powder is 1% of the mass of the conductive silver paste.
Performance testing
The photovoltaic silver paste of examples 1 to 5 and comparative examples 1 to 4 were mixed, stirred and mixed uniformly by a disperser, then printed on the surface of a heterojunction battery cell, dried and cured at 200 ℃ for 30min, and the values of ohmic contact and resistivity were measured, and the results are shown in table 1 below.
Table 1-ohmic contacts and resistivity data for photovoltaic slurries in different examples
| Examples | Resistivity (mu omega cm) | Ohmic contact (mΩ·cm) 2 ) |
| Example 1 | 8.8 | 3.7 |
| Example 2 | 9.0 | 3.1 |
| Example 3 | 8.3 | 1.8 |
| Example 4 | 7.6 | 2.0 |
| Example 5 | 8.0 | 3.4 |
| Comparative example 1 | 8.5 | 5.2 |
| Comparative example 2 | 150 | 4.8 |
| Comparative example 3 | 15.4 | 5.5 |
| Comparative example 4 | 8.8 | 5.0 |
As can be seen from table 1, in example 1, by adding a certain amount of oxide and low melting point metal, ohmic contact can be reduced to some extent, and the resistivity of the oxide is slightly affected by the larger resistivity. The ohmic contact can be better improved by adding a certain amount of hydroxide and oxide in example 2, but at the same time the resistivity is also made larger. In example 3, by adding the oxide, hydroxide and low melting point alloy, and taking care of balancing the size of the added particles, a better effect is achieved, and the ohmic contact is greatly reduced with little influence on the resistivity. In example 4, by adding two low melting point metal alloys, the effect of reducing the resistivity to some extent can be achieved, and the ohmic contact can be greatly reduced. The lower ohmic contact is also better while maintaining good resistivity by adding small amounts of small particle metal oxide and low melting point metal alloy in example 5. The conventional low temperature photovoltaic silver paste used in comparative example 1 had good resistivity but poor ohmic contact level. Too much oxide was added to comparative example 2, resulting in abrupt change in resistivity of the silver paste, and the final use could not be obtained. In comparative example 3, too much oxide was added, resulting in that the additive could not well reach the inside of the voids of the pyramid of the silicon wafer, and the overlap surface with silver powder was too small, ultimately affecting the resistivity. In comparative example 4, a certain amount of low melting point metal powder was added alone, and the effect was very similar to that of comparative example 1 without addition of the low melting point metal powder, and there was no significant improvement in resistivity and ohmic contact.
According to the application, the doping agent is added into the conductive paste, so that certain reaction and doping occur on the surface of the indium tin oxide, the silver powder is easier to contact with the indium tin oxide, and the ohmic contact is reduced. And meanwhile, the adding amount and the size of the added dopant are regulated, so that the adding is more effective, and the resistivity level is influenced as little as possible. Compared with the mode in the prior art, the photovoltaic silver paste reduces the influence of ohmic contact under the condition of less influence on resistivity, so that the current of the heterojunction photovoltaic cell is better collected, and better photoelectric conversion efficiency is provided.
The foregoing description of the preferred embodiments of the application is not intended to be limiting, but rather is intended to cover all modifications, equivalents, alternatives, and improvements that fall within the spirit and scope of the application.
Claims (10)
1. The photovoltaic silver paste is characterized by comprising the following components: conductive silver paste and dopant;
wherein the dopant comprises at least one of a metal oxide, a metal hydroxide, and a low melting point metal.
2. The photovoltaic silver paste of claim 1, wherein the metal oxide comprises at least one of aluminum oxide, silicon oxide, phosphorus oxide, nickel oxide, copper oxide, cuprous oxide, ferric oxide, tellurium oxide, cadmium oxide, tin oxide, indium oxide, antimony oxide, silver oxide, lead oxide, bismuth oxide.
3. The photovoltaic silver paste of claim 1, wherein the metal hydroxide comprises at least one of aluminum hydroxide, iron hydroxide, copper hydroxide, tellurium hydroxide, cadmium hydroxide, tin hydroxide, indium hydroxide, antimony hydroxide, silver hydroxide, lead hydroxide, bismuth hydroxide.
4. The photovoltaic silver paste of claim 1, wherein the low melting point metal comprises at least one of mercury, gallium, indium, tin, bismuth, lead, cadmium, dysprosium, amalgam, gallium alloy, indium alloy, tin alloy, bismuth alloy, lead alloy, cadmium alloy, dysprosium alloy.
5. The photovoltaic silver paste according to claim 1, wherein the mass of the dopant is 0.05 to 5% of the mass of the conductive silver paste.
6. The photovoltaic silver paste of claim 1, wherein the dopant has a particle size of 10 to 1000nm.
7. The photovoltaic silver paste of any of claims 1-6, wherein the conductive silver paste comprises: silver powder, resin, solvent and curing agent;
the resin comprises at least one of epoxy resin, polyester resin and acrylic resin;
and/or the solvent comprises at least one of DBE, ethylene glycol diethyl ether acetate, ethylene glycol butyl ether acetate, diethylene glycol diethyl ether acetate, diethylene glycol butyl ether and terpineol;
and/or the curing agent comprises at least one of a self-blocked isocyanate curing agent, a phthalate, a silane coupling agent, dicyandiamide, modified dicyandiamide, imidazole, modified imidazole, anhydride, boron trifluoride monoethylamine, and an amino resin.
8. The photovoltaic silver paste according to claim 1, wherein the mass ratio of the silver powder to the resin to the solvent to the curing agent is (80-100): (5-10): (8-15): (1-5).
9. A method for preparing the photovoltaic silver paste according to any one of claims 1 to 8, comprising the steps of: and mixing the conductive silver paste with the doping agent, and stirring to obtain the photovoltaic silver paste.
10. Use of the photovoltaic silver paste according to any one of claims 1 to 8 or the photovoltaic silver paste prepared by the preparation method according to claim 9 in a photovoltaic cell.
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