CN116577943A - Color filter structure and pixel array switching control method thereof - Google Patents
Color filter structure and pixel array switching control method thereof Download PDFInfo
- Publication number
- CN116577943A CN116577943A CN202310450432.1A CN202310450432A CN116577943A CN 116577943 A CN116577943 A CN 116577943A CN 202310450432 A CN202310450432 A CN 202310450432A CN 116577943 A CN116577943 A CN 116577943A
- Authority
- CN
- China
- Prior art keywords
- pixel unit
- phase change
- change material
- light
- pixel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 9
- 239000012782 phase change material Substances 0.000 claims abstract description 69
- 229910052751 metal Inorganic materials 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 32
- 238000002425 crystallisation Methods 0.000 claims abstract description 21
- 230000003287 optical effect Effects 0.000 claims abstract description 14
- 230000008859 change Effects 0.000 claims abstract description 11
- 150000004770 chalcogenides Chemical class 0.000 claims description 12
- 230000008025 crystallization Effects 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 abstract description 11
- 238000011065 in-situ storage Methods 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 5
- 238000003491 array Methods 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 9
- 239000003086 colorant Substances 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 101000581507 Homo sapiens Methyl-CpG-binding domain protein 1 Proteins 0.000 description 2
- 101001134861 Homo sapiens Pericentriolar material 1 protein Proteins 0.000 description 2
- 102100027383 Methyl-CpG-binding domain protein 1 Human genes 0.000 description 2
- 229910001370 Se alloy Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- SCZZGVQQIXBCTC-UHFFFAOYSA-N [Sb].[Se].[Ge] Chemical compound [Sb].[Se].[Ge] SCZZGVQQIXBCTC-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- VDDXNVZUVZULMR-UHFFFAOYSA-N germanium tellurium Chemical compound [Ge].[Te] VDDXNVZUVZULMR-UHFFFAOYSA-N 0.000 description 2
- 101150033318 pcm2 gene Proteins 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- OQRNKLRIQBVZHK-UHFFFAOYSA-N selanylideneantimony Chemical compound [Sb]=[Se] OQRNKLRIQBVZHK-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- YPMOSINXXHVZIL-UHFFFAOYSA-N sulfanylideneantimony Chemical compound [Sb]=S YPMOSINXXHVZIL-UHFFFAOYSA-N 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- DDJAGKOCVFYQOV-UHFFFAOYSA-N tellanylideneantimony Chemical compound [Te]=[Sb] DDJAGKOCVFYQOV-UHFFFAOYSA-N 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 108091034117 Oligonucleotide Proteins 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0102—Constructional details, not otherwise provided for in this subclass
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/0009—Materials therefor
- G02F1/0054—Structure, phase transitions, NMR, ESR, Moessbauer spectra
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Filters (AREA)
Abstract
The invention provides a color filter structure and a pixel array switching control method thereof, wherein the color filter comprises two pixels, namely a switchable pixel and a non-switchable pixel, the switchable pixel sequentially comprises a transparent substrate, a metal layer, a transparent conductive medium layer, a phase-change material layer, a transparent conductive medium layer and a metal layer from bottom to top to form a Fabry-Perot resonant cavity, and the two layers of phase-change materials can be crystallized successively by applying an electric pulse, so that at least three different states of amorphous-amorphous, amorphous-crystallization, crystallization-crystallization and the like are generated to change the optical thickness of the Fabry-Perot resonant cavity, so that the Fabry-Perot resonant cavity can be switched freely between at least three states of selectively transmitting green light, yellow light and global light. The pixel arrangement mode of the transmission type color filter provided by the invention can be dynamically switched among at least three pixel arrays of red, green, blue, red, green, white and red Huang Huanglan in situ through electric operation, and can be switched into the optimal pixel arrangement according to the requirements of users.
Description
Technical Field
The invention belongs to the field of color filtering, and particularly relates to a color filter structure and a pixel array switching control method thereof.
Background
Color filters, which are an important component of image sensors, can impart color information to the image sensors. The color reproduction capability of the image sensor is closely related to the arrangement of pixels in addition to the color purity and transmittance of the pixels in the color filter.
The common Bayer color filter is based on the design of three primary colors, and the pixel arrangement mode is red, green, blue and green, and the accurate color is used until now. However, due to the influence of the loss of the light incoming amount, the colored color information is wasted and the signal to noise ratio is low in small-size image sensors such as mobile phones, and the performance is poor under the condition of dark light. The arrangement mode of red, green, white and blue pixels developed in recent years improves the signal to noise ratio, but has the problem of color oligos; the pixel arrangement of red Huang Huanglan has higher light input and signal to noise ratio, performs well in dark light, but has overexposure problem when the light is sufficient.
Therefore, there is an urgent need for a color filter capable of in-situ switching pixel arrangement according to light conditions to meet the requirement of efficient collection of color information by an image sensor under different light intensities.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide a color filter structure and a pixel array switching control method thereof, and aims to solve the problem that the prior art does not have a color filter capable of switching pixel arrangement modes in situ according to light conditions and cannot ensure that an image sensor can acquire color information with high efficiency under different light intensities.
To achieve the above object, in a first aspect, the present invention provides a color filter structure comprising: the pixel structure comprises a first pixel unit, a second pixel unit, a third pixel unit and a fourth pixel unit;
the first pixel unit can selectively transmit light of a first color;
the second pixel unit can selectively transmit light of a second color;
the third pixel unit can selectively transmit light of a third color;
the fourth pixel unit can selectively transmit light of a fourth color;
the second pixel unit and the third pixel unit have the same constitution and sequentially comprise the following components from bottom to top: the first metal layer, the first transparent conductive medium layer, the first phase change material layer, the second transparent conductive medium layer, the second phase change material layer, the third transparent conductive medium layer and the second metal layer; the first transparent conductive medium layer, the first phase change material layer, the second transparent conductive medium layer, the second phase change material layer and the third transparent conductive medium layer are used as medium materials and form a Fabry-Perot resonant cavity together with the first metal layer and the second metal layer; when the physical thickness of the Fabry-Perot resonant cavities of the second pixel unit and the third pixel unit is in a preset range, the crystallization state of any one of the first phase change material layer and the second phase change material layer is changed, and the color of the light transmitted by the pixel unit is changed;
the pixel array corresponding to the light transmitted by the color filter structure comprises light of a first color to light of a fourth color, wherein the color of the light transmitted by the second pixel unit and the third pixel unit can be changed along with the change of the crystallization state of the phase change material in the second pixel unit and the third pixel unit.
In an optional example, the visible light transmitted by the first pixel unit is red light, and the visible light transmitted by the fourth pixel unit is blue light;
the transmitted visible light of the second pixel unit and the third pixel unit can be switched among green light, yellow light and white light according to the change of the crystallization state of the internal phase change material.
In an alternative example, when the physical thickness of the Fabry-Perot resonant cavity of the second pixel unit or the third pixel unit is within the preset range, if the first phase change material layer and the second phase change material layer are both in an amorphous state, and the optical thickness of the Fabry-Perot resonant cavity is not an integer multiple of any visible wavelength at this time, the corresponding pixel unit transmits white light; if the first phase change material layer and the second phase change material layer are both in a crystalline state, and the optical thickness of the Fabry-Perot resonant cavity is an integral multiple of the wavelength of yellow light, the corresponding pixel unit transmits the yellow light; if the first phase change material layer is in an amorphous state, the second phase change material layer is in a crystalline state, and the optical thickness of the Fabry-Perot resonant cavity is an integral multiple of the wavelength of green light, the corresponding pixel unit transmits the green light;
the color combination mode corresponding to the pixel array with the color filter structure can be dynamically switched among red, green and blue, red Huang Huanglan and red, green and blue.
In an alternative example, the first phase change material layer and the second phase change material layer are made of a chalcogenide phase change material.
In an alternative example, the first to third transparent conductive dielectric layers are made of indium tin oxide or aluminum doped zinc oxide material.
In an alternative example, the first and second phase change material layers have thicknesses in the range of 7nm to 20nm.
In an alternative example, the thickness of the first to third transparent conductive medium layers is in a range of 50nm to 300nm.
In an optional example, the connection line between the centers of the first pixel unit and the fourth pixel unit is a first line, and the connection line between the centers of the second pixel unit and the third pixel unit is a second line; the first line and the second line are perpendicular.
In a second aspect, the present invention provides a pixel array switching control method for providing a color filter structure to the first aspect, including the steps of:
and applying electric pulses with different intensities to at least one pixel unit in the second pixel unit and the third pixel unit so as to control the crystallization states of the two phase change material layers in the corresponding pixel units, and switching the color of the pixel array corresponding to the color filter structure.
In general, the above technical solutions conceived by the present invention have the following beneficial effects compared with the prior art:
the invention provides a color filter structure and a pixel array switching control method thereof. The non-switchable pixels sequentially comprise a transparent substrate, a metal electrode layer, a transparent conductive medium layer and a metal electrode layer from bottom to top, and correspondingly selectively transmit red light and blue light; the switchable pixel sequentially comprises a transparent substrate, a metal electrode layer, a transparent conductive medium layer, a chalcogenide phase change material layer, a transparent conductive medium layer and a metal electrode layer from bottom to top to form a Fabry-Perot resonant cavity, and the two layers of phase change materials can be crystallized successively through time electric pulse, so that at least three different states such as amorphous-amorphous, amorphous-crystallization, crystallization-crystallization and the like are generated to change the optical thickness of the Fabry-Perot resonant cavity, and the Fabry-Perot resonant cavity can be switched freely between at least three states of selectively transmitting green light, yellow light and global light. The pixel arrangement mode of the transmission type color filter provided by the invention can be dynamically switched in situ among at least three pixel arrays of red, green, blue, red, green, white and red Huang Huanglan through electric operation, and can be switched into optimal pixel arrangement according to different requirements of users on image color purity, signal to noise ratio and resolution, and different requirements on image quality under different environments can be met.
Drawings
FIG. 1 is a schematic diagram of a pixel arrangement and an array structure of a transmissive color filter with dynamic three-switch pixel arrangement according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a film structure of a non-switchable pixel of a transmissive color filter with pixel arrangement dynamic three-switching according to an embodiment of the present invention;
fig. 3 is a schematic diagram of a film structure of a switchable pixel of a transmissive color filter with pixel arrangement dynamic three-switching according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
It should be noted that, based on the principle of Fabry-Perot resonant cavity, it only allows light with a specific wavelength that is an integer multiple of the optical thickness (product of the refractive index and the physical thickness of the thin film) of the resonant cavity to pass through, so as to have color selectivity, the pixel unit capable of switching transmission light provided by the present invention can selectively transmit at least four different colors of light (crystalline-crystalline, crystalline-amorphous, amorphous-crystalline and amorphous-amorphous) along with crystalline change of two phase change material layers in principle, and under the premise, it is first required to control the thickness of each film layer under a suitable crystalline combination to construct the Fabry-Perot resonant cavity and can have one color selectivity, and the structure can have three color selectivities under the remaining three crystalline combinations respectively.
It can be understood that according to the analysis of the above principle, the switchable pixel provided by the invention can theoretically realize selective transmission of multiple colors, and can realize the same light selection by adopting different means through the selection of different phase change materials and the regulation and control of the thickness of each layer of film.
Therefore, it is within the scope of the present invention for those skilled in the art to implement the selective transmission of multiple colors of light of the pixel unit by using the specific technical means under the application of the technical principles of the present invention.
In particular, for vivid explanation of the present invention, the present invention is exemplified by selective transmission of three colors of green, white, and yellow by switchable pixel units, and the above illustration should not be construed as any substantial limitation of the protection scheme of the present invention. Accordingly, the color filter is provided with non-switchable pixels and switchable pixels, which can realize the switching of at least six pixel arrays of red, green, blue, red, green, white, blue, red Huang Huanglan, red, yellow, white, blue, red Bai Bailan, red, green, yellow, blue, etc., and the previous three common pixel arrays are exemplified in the embodiment of the present invention, and should not be taken as any specific limitation on the protection scope of the present invention.
Embodiments of the present invention will be described below with reference to the accompanying drawings in the embodiments of the present invention.
Aiming at the defects of the prior art, the invention aims to provide a transmission type color filter with dynamic three-switching pixel arrangement, wherein the pixel arrangement mode of the color filter can be dynamically switched between red, green, blue, red Huang Huanglan and red, green, white and blue in situ through electric operation, and the color arrangement can be switched to the optimal pixel arrangement according to different requirements of users on the color purity, the signal to noise ratio and the resolution ratio of an image.
In order to achieve the above-mentioned objective, the present invention provides a transmissive color filter with dynamic three-switch pixel arrangement, which includes multiple color filter pixels, wherein the red and blue filter pixels of the color filter are non-switchable pixels, and the other pixels are switchable pixels, so that the green, yellow or global light can be freely selected and filtered. Each pixel of the color filter is of a multilayer film structure, and the switchable pixel comprises a transparent substrate, a first metal electrode layer, a first transparent conductive medium layer, a first chalcogenide phase change material layer, a second transparent conductive medium layer, a second chalcogenide phase change material layer, a third transparent conductive medium layer and a second metal electrode layer from bottom to top in sequence; the non-switchable pixels sequentially comprise a transparent substrate, a first metal electrode layer, a first transparent conductive medium layer and a first metal electrode layer from bottom to top.
In addition, each color filter pixel is square, rotates 45 degrees along the center point and is arranged according to the row-column rule. The top transparent conductive medium layers of the switchable pixels are connected with a bit line BL, and the bottom transparent conductive medium layers are connected with a word line WL. The two layers of phase change materials of the switchable pixel unit are subjected to phase change successively by applying electric pulses with proper voltages and amplitudes to the switchable pixel through the word line and the bit line, so that three states of amorphous-amorphous, amorphous-crystallization and crystallization-crystallization are presented. The transition in the state of the two-layer chalcogenide phase change material is used to adjust the selective filter characteristics of the pixel cell.
The invention provides a pixel arrangement dynamic three-switching transmission type color filter, which comprises a plurality of color filter pixels, wherein the non-switchable pixels form a Fabry-Perot resonant cavity by utilizing a metal electrode layer and a transparent conductive medium layer together, and red and blue pixels are obtained by adjusting the thickness of the transparent conductive medium layer. The switchable pixel utilizes a metal electrode layer, a transparent conductive medium layer and two chalcogenide phase change materials to jointly form a Fabry-Perot resonant cavity, and the capability of selectively transmitting green, yellow and global light is obtained by adjusting the thickness and the state of the transparent conductive medium layer and the two chalcogenide phase change materials.
In the embodiment, the sulfur-based phase change material is made of germanium tellurium, antimony tellurium, germanium antimony selenium tellurium, antimony sulfur or antimony selenium alloy material, and the thickness of the sulfur-based phase change material layer is 7nm-20nm.
In an embodiment, the transparent conductive medium material is made of indium tin oxide or aluminum doped zinc oxide material, and the thickness of the transparent conductive medium layer is 50nm-200nm.
In an embodiment, the metal electrode material is made of silver, platinum or titanium material, and the thickness of the metal electrode layer is 5nm-15nm.
In an embodiment, the phase change material layer of the switchable pixel is capable of being transformed from an amorphous state to a crystalline state when the voltage of the electrical pulse applied to the switchable pixel is 2V-5V and the pulse width is 200ns-400 ns; when the voltage of the electric pulse applied to the switchable pixel is 6V-9V and the pulse width is 50ns-200ns, the phase change material layer of the switchable pixel can be changed from the crystalline state to the amorphous state.
In an embodiment, the thickness of the metal electrode layer of the non-switchable pixel is 5nm-15nm and the thickness of the transparent conductive medium layer is 50nm-300nm. The thickness of the metal electrode layer of the switchable pixel is 5nm-15nm, the thickness of the transparent conductive medium layer is 50nm-200nm, and the thickness of the phase change material layer is 7nm-20nm.
As shown in fig. 1, the pixel arrangement mode of the transmissive color filter with dynamic three-switching pixel arrangement provided by the invention is similar to that of the red, green and blue pixels of the conventional Bayer color filter, but the difference is that the pixels of the invention are divided into two types of switchable pixels and non-switchable pixels, the non-switchable pixels are red and blue pixels, the rest pixels are switchable pixels, and the pixels can be switched among green, yellow and white.
In this embodiment, as shown in fig. 1, each color filter pixel is square and rotated 45 ° along the center point, and is arranged according to the row-column rule. The top transparent conductive medium layers of the switchable pixels are connected with a bit line BL, and the bottom transparent conductive medium layers are connected with a word line WL. The two layers of phase change materials of the switchable pixel unit are subjected to phase change successively by applying electric pulses with proper voltages and amplitudes to the switchable pixel through the word line and the bit line, so that three states of amorphous-amorphous, amorphous-crystallization and crystallization-crystallization are presented. The transition in the state of the two-layer chalcogenide phase change material is used to adjust the selective filter characteristics of the pixel cell.
In this embodiment, as shown in fig. 2, the film structure of the non-switchable pixel is a metal electrode layer/a transparent conductive medium layer/a metal electrode layer sequentially from bottom to top.
In this embodiment, as shown in fig. 3, the film structure of the switchable pixel sequentially includes, from bottom to top, a first metal electrode layer, a first transparent conductive medium layer, a first chalcogenide phase change material layer, a second transparent conductive medium layer, a second chalcogenide phase change material layer, a third transparent conductive medium layer, and a second metal electrode layer, so as to form a Fabry-Perot resonant cavity. The metal electrode layer is made of platinum, titanium or silver material and is used as a semitransparent semi-transmission layer and an electrode to perform electric operation on the switchable pixels; the transparent conductive medium layer is made of indium tin oxide or aluminum doped zinc oxide material and is used as the medium layer and the conductive layer; the chalcogenide phase change material layer is made of germanium tellurium, antimony tellurium, germanium antimony selenium tellurium, antimony sulfur or antimony selenium alloy materials, so that dynamic switching of different optical states is realized.
Specifically, the principle of the transmissive color filter with dynamic three switching pixel arrangement provided in this embodiment is as follows: a typical sandwich structure is formed by using an upper metal layer, a lower metal layer and a medium layer in the middle, so that a Fabry-Perot resonant cavity is formed. Only when the optical thickness (product of the refractive index of the thin film and the physical thickness) of the resonant cavity is just an integer multiple of half the wavelength of an incident light, the light of the wavelength can be smoothly transmitted, thereby exhibiting selective transmission of the incident light. The two layers of different phase-change materials between the Fabry-Perot resonant cavities have different refractive indexes before and after phase change, so that one resonant cavity has two or more resonant states under the condition of not changing the physical thickness, and can have multiple color selectivities.
When the Fabry-Perot resonator has two layers of phase change material, the two layers of phase change material have three combined states of amorphous-amorphous, amorphous-crystalline, crystalline-crystalline, and have three different optical thicknesses. When the state of the resonant cavity is amorphous-amorphous, the resonant cavity is weak in resonance and cannot have color selectivity, so that the whole light can be transmitted; when the state of the resonant cavity is amorphous-crystallization, the optical thickness of the resonant cavity accords with the integral multiple of the wavelength corresponding to green light, and green light can be selectively transmitted; when the resonant cavity is in a crystallization-crystallization state, the optical thickness of the resonant cavity accords with the integral multiple of the corresponding wavelength of yellow light, and the yellow light can be selectively transmitted. Therefore, when all the switchable pixels are in an amorphous-crystalline state, the pixel arrangement mode is red, green and blue; when all switchable pixels are in the crystalline-crystalline state, the pixel arrangement is red Huang Huanglan; when half of the switchable pixels are in a crystal-crystal state and half of the switchable pixels are in an amorphous-crystal state, the pixel arrangement mode is red, green, white and blue.
Preferably, the thickness of the metal electrode layer of the pixel arrangement dynamic three-switching transmissive color filter provided in this embodiment is 5nm-15nm, the thickness of the transparent conductive medium layer is 50nm-300nm, and the thickness of the phase change material layer is 7nm-20nm.
The pixel arrangement dynamic three-switching transmission type color filter provided by the embodiment can enable the image sensor to be switched into a pixel arrangement mode with the best shooting effect in situ under different ambient light rays, and can be adjusted automatically according to the use environment.
The following describes in detail a transmissive color filter with dynamic three-switching pixel arrangement according to the present invention with reference to specific embodiments.
Example 1
The pixel arrangement of the transmissive color filter with dynamic three-switching pixel arrangement provided in this embodiment 1 has at least three modes of red, green, blue, red, green, white, blue, and red Huang Huanglan, and the pixels are divided into two types of switchable pixels and non-switchable pixels.
The pixel provided by the embodimentThe design method of the transmission type color filter for arranging dynamic three switching is as follows: (1) The red pixels and the blue pixels are non-switchable pixels, the film layer structure is Ag/ITO/Ag sequentially from bottom to top, the thickness of the Ag layer is 7nm-15nm, and the thickness of the ITO is 50nm-300nm. (2) The other pixels are switchable pixels, the pixels can be freely switched between selectively transmitting green light, yellow light or whole light, the film layer structure is Ag/ITO/PCM1/ITO/PCM2/ITO/Ag from bottom to top, the thickness of the Ag layer is 5nm-15nm, and the thickness of the ITO layer is 50nm-200nm. Specifically, PCM1 and PCM2 refer to phase change material layers, and Ge is selected in this embodiment 2 Sb 2 Te 5 And Sb (Sb) 2 S 3 Preparing a corresponding phase change material layer, wherein Ge 2 Sb 2 Te 5 And Sb (Sb) 2 S 3 The layer thickness is 7nm-20nm.
The pixels in this embodiment are square in shape, rotated 45 ° along the center, and arranged in rows and columns. And the top transparent conductive medium layers of the switchable pixels are connected with a bit line BL, and the bottom transparent conductive medium layers are connected with a word line WL. The two layers of phase change materials of the switchable pixel unit are subjected to phase change successively by applying electric pulses with proper voltages and amplitudes to the switchable pixel through the word line and the bit line, so that three states of amorphous-amorphous, amorphous-crystallization and crystallization-crystallization are presented.
Based on the above structure and design, the non-switchable pixel of the transmissive color filter with dynamic three-switching pixel arrangement provided in this embodiment can exhibit selectivity for red light and blue light, and the switchable pixel can be freely switched between selectively transmitting green light, yellow light and global light under the stimulation of the electric pulse. Therefore, the transmissive color filter with dynamic three-switching pixel arrangement of the present embodiment can realize at least three pixel arrangement modes of red, green, blue, red, green, white and red Huang Huanglan.
It is to be understood that the terms such as "comprises" and "comprising," which may be used in this invention, indicate the presence of the disclosed functions, operations or elements, and are not limited to one or more additional functions, operations or elements. In the present invention, terms such as "comprising" and/or "having" may be construed to mean a particular feature, number, operation, constituent element, component, or combination thereof, but may not be construed to exclude the presence or addition of one or more other features, numbers, operations, constituent elements, components, or combination thereof.
The foregoing is merely illustrative of the present invention, and the present invention is not limited thereto, and any person skilled in the art will readily recognize that variations or substitutions are within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (9)
1. A color filter structure, comprising: the pixel structure comprises a first pixel unit, a second pixel unit, a third pixel unit and a fourth pixel unit;
the first pixel unit can selectively transmit light of a first color;
the second pixel unit can selectively transmit light of a second color;
the third pixel unit can selectively transmit light of a third color;
the fourth pixel unit can selectively transmit light of a fourth color;
the second pixel unit and the third pixel unit have the same constitution and sequentially comprise the following components from bottom to top: the first metal layer, the first transparent conductive medium layer, the first phase change material layer, the second transparent conductive medium layer, the second phase change material layer, the third transparent conductive medium layer and the second metal layer; the first transparent conductive medium layer, the first phase change material layer, the second transparent conductive medium layer, the second phase change material layer and the third transparent conductive medium layer are used as medium materials and form a Fabry-Perot resonant cavity together with the first metal layer and the second metal layer; when the physical thickness of the Fabry-Perot resonant cavity of the second pixel unit and the third pixel unit is in a preset range, the crystallization state of any one of the first phase change material layer and the second phase change material layer is changed, and the color of the pixel unit where the phase change material layer with the changed crystallization state is located, which transmits light, is changed;
the pixel array corresponding to the light transmitted by the color filter structure comprises light of a first color to light of a fourth color, wherein the color of the light transmitted by the second pixel unit and the third pixel unit can be changed along with the change of the crystallization state of the phase change material in the second pixel unit and the third pixel unit.
2. The color filter structure according to claim 1, wherein the first pixel unit transmits visible light of red light and the fourth pixel unit transmits visible light of blue light;
the transmitted visible light of the second pixel unit and the third pixel unit can be switched among green light, yellow light and white light according to the change of the crystallization state of the internal phase change material.
3. The color filter structure according to claim 2, wherein when the physical thickness of the Fabry-Perot resonant cavity of the second pixel unit or the third pixel unit is within a predetermined range, if the first phase change material layer and the second phase change material layer are both in an amorphous state, and the optical thickness of the Fabry-Perot resonant cavity is not an integer multiple of any visible wavelength, the corresponding pixel unit transmits white light; if the first phase change material layer and the second phase change material layer are both in a crystalline state, and the optical thickness of the Fabry-Perot resonant cavity is an integral multiple of the wavelength of yellow light, the corresponding pixel unit transmits the yellow light; if the first phase change material layer is in an amorphous state, the second phase change material layer is in a crystalline state, and the optical thickness of the Fabry-Perot resonant cavity is an integral multiple of the wavelength of green light, the corresponding pixel unit transmits the green light;
the color combination mode corresponding to the pixel array with the color filter structure can be dynamically switched among red, green and blue, red Huang Huanglan and red, green and blue.
4. A color filter structure according to any one of claims 1-3, characterized in that the first phase change material layer and the second phase change material layer are made of a chalcogenide phase change material.
5. A color filter structure as defined in any one of claims 1-3, characterized in that the first to third transparent conductive dielectric layers are made of indium tin oxide or aluminum doped zinc oxide material.
6. A color filter structure according to any one of claims 1-3, characterized in that the thickness of the first phase change material layer and the second phase change material layer is in the range of 7nm to 20nm.
7. A color filter structure according to any one of claims 1-3, characterized in that the thickness of the first to third transparent conductive medium layers is in the range of 50-300 nm.
8. The color filter structure according to claim 1, wherein a line connecting centers of the first pixel unit and the fourth pixel unit is a first line, and a line connecting centers of the second pixel unit and the third pixel unit is a second line; the first line and the second line are perpendicular.
9. A method of controlling switching of a pixel array of the color filter structure of any one of claims 1 to 8, comprising the steps of:
and applying electric pulses with different intensities to at least one pixel unit in the second pixel unit and the third pixel unit so as to control the crystallization states of the two phase change material layers in the corresponding pixel units, and switching the color of the pixel array corresponding to the color filter structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310450432.1A CN116577943A (en) | 2023-04-24 | 2023-04-24 | Color filter structure and pixel array switching control method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310450432.1A CN116577943A (en) | 2023-04-24 | 2023-04-24 | Color filter structure and pixel array switching control method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116577943A true CN116577943A (en) | 2023-08-11 |
Family
ID=87544539
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310450432.1A Pending CN116577943A (en) | 2023-04-24 | 2023-04-24 | Color filter structure and pixel array switching control method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116577943A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117742119A (en) * | 2023-12-27 | 2024-03-22 | 华中科技大学 | Holographic display device based on phase change material |
-
2023
- 2023-04-24 CN CN202310450432.1A patent/CN116577943A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117742119A (en) * | 2023-12-27 | 2024-03-22 | 华中科技大学 | Holographic display device based on phase change material |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP3087430B1 (en) | Display device based on phase-change materials | |
| US11112672B2 (en) | Optical device | |
| TW201741730A (en) | Optical device with thermally switching phase change material | |
| JP4105537B2 (en) | Electrochromic element | |
| WO2017215363A1 (en) | Display device based on phase change material | |
| US8730554B2 (en) | Variable transmittance element, optical system, and optical apparatus utilizing electrochromic material | |
| JP7104436B2 (en) | Multicolor electrochromic structure, its manufacturing method and application | |
| CN116577943A (en) | Color filter structure and pixel array switching control method thereof | |
| CN104730796A (en) | Non-volatile display unit designed through phase change materials and display array | |
| CN110568692A (en) | Display device based on phase-change material and quantum dots | |
| CN110753959B (en) | Display device | |
| TW201825997A (en) | Transflective, pcm-based display device | |
| CN205899180U (en) | Display device based on phase change material | |
| CN112180648A (en) | Optical film structure, preparation method and application thereof | |
| US20220085290A1 (en) | Display material | |
| CN116449629A (en) | Pixel structure and display driving method thereof | |
| CN115696011B (en) | Phase change material-based electrically controllable color filter array and artificial vision system | |
| CN117742011B (en) | Pixel gray scale modulation structure based on phase change material | |
| CN117784449B (en) | Filtering structure based on phase change material | |
| CN116626955A (en) | Electrically tunable optical film | |
| Jafari | Reconfigurable Optical Devices Utilizing Chalcogenide Phase Change Materials | |
| WO2021094705A1 (en) | Display device for displaying a pattern, method of manufacturing a display device | |
| EP4133329A1 (en) | Display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |