CN116626955A - Electrically tunable optical film - Google Patents
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- CN116626955A CN116626955A CN202310616297.3A CN202310616297A CN116626955A CN 116626955 A CN116626955 A CN 116626955A CN 202310616297 A CN202310616297 A CN 202310616297A CN 116626955 A CN116626955 A CN 116626955A
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- 239000012788 optical film Substances 0.000 title claims abstract description 35
- 239000012782 phase change material Substances 0.000 claims abstract description 55
- 229910052751 metal Inorganic materials 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 33
- 150000004770 chalcogenides Chemical class 0.000 claims abstract description 28
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- 229910052714 tellurium Inorganic materials 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 3
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- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
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- 238000001228 spectrum Methods 0.000 claims description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical group [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 2
- -1 tellurium selenide Chemical class 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/23—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour for the control of the colour
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/0009—Materials therefor
- G02F1/0063—Optical properties, e.g. absorption, reflection or birefringence
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0102—Constructional details, not otherwise provided for in this subclass
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/1514—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material
- G02F1/1523—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material comprising inorganic material
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/153—Constructional details
- G02F1/1533—Constructional details structural features not otherwise provided for
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/153—Constructional details
- G02F1/155—Electrodes
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
Abstract
The invention discloses an electrically adjustable optical film, belonging to the fields of optical films and optical filter display; more specifically, the electrically tunable optical film is based on a nano-optical resonant cavity, and different optical filtering effects are achieved by adjusting the thickness design of each layer; the transparent thin film comprises a transparent substrate, a bottom transparent conductive layer, a first metal layer, a central first transparent conductive layer, a chalcogenide phase change material layer, a central second transparent conductive layer, a second metal layer and a top transparent conductive layer from bottom to top. The partial design can realize the movement of the transmission spectrum wave peak by changing the phase of the phase change material layer, adjust and acquire different colors, or switch from visible light to near infrared. Compared with other electrically adjustable devices, the invention has the advantages of short switching time, long service life, simple manufacturing process and the like, and can be used in the electrochromic field.
Description
Technical Field
The invention belongs to the field of optical films and optical filter display, and particularly relates to an electrically adjustable optical film.
Background
Structural colors are produced by the interaction of light with the micro-nano structure. The same material, such as a metal or medium, can be used to create vivid colors by changing the geometry, dimensions or structural arrangement during and even after manufacture. The color produced in this case is much brighter than the pigment or dye coloration. Furthermore, the colored structures generally have stability, and the color of the structure does not fade over time, but rather provides a substantially permanent coloration. Thus leading to intensive research into various structural chromogenic schemes based on metal nanostructures, dielectric supersurfaces, photonic crystals and fabry-perot (FP) resonances.
In the display or imaging field, however, it is often desirable to have an electrically reconfigurable function. Electrochemical methods are generally used, and electrochromic, electrodeposition processes, etc. of the polymer are used because ions in the electrolyte move slowly, accompanied by chemical reactions, at a slow rate of operation. Secondly, the nature of the mechanism by thermal or mechanical processes is constrained by the operating system, and further improvements in stability and lifetime are also needed. In recent years, applications of phase change materials in the nano-photoelectric field have been gradually developed. The optical contrast between the phases is larger and the shorter switching time is a major advantage. From multi-level reflectivity to dynamic nano printing and structural colors, the phase change material has achieved outstanding results and has wide application prospects. As a representative of the phase change mechanism, chalcogenide materials have been widely used in the field of tunable color display. The use of dynamic optical resonance using phase change material (Phase Change Material, PCM) based optics is a very useful strategy for manufacturing dual color displays. At the same time, fine tuning of the degree of crystallization/amorphization of PCM is a key factor in developing multicolor dynamic displays that can be controlled by direct or indirect thermal stimulation, i.e. electrical or optical driving. As a new material for photonics, there is a significant advantage over other conventional materials. Not only binary systems but also polychromatic devices with accurate color depth modulation are possible, with the potential to utilize different stimuli, to achieve accurate spatial control and very fast driving, in particular lasers and voltages.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides an electrically adjustable optical film, which aims to construct an adjustable color compared with electrochemical mechanisms and the like, and provides an optical film which simply depends on the length of an optical cavity modulated by a stack of films, and has the advantages of short crystalline state and amorphous state switching time, long service life, simple manufacturing process and the like.
In order to achieve the above object, the present invention provides an electrically tunable optical film comprising a bottom transparent conductive layer, a first metal layer, a central first transparent conductive layer, a chalcogenide phase change material layer, a central second transparent conductive layer, a second metal layer and a top transparent conductive layer disposed on a transparent substrate from bottom to top;
the bottom transparent conductive layer and the top transparent conductive layer are respectively used as a bottom electrode and a top electrode and are used for electrically operating the chalcogenide phase change material, and the chalcogenide phase change material layer is subjected to phase change by utilizing resistance heat; the top transparent conductive layer is also used for preventing the second metal layer from being oxidized by contact with air;
the higher the thickness of the first metal layer and the second metal layer is, the lower the transmittance is, so that the half-width of the spectrum is reduced, and the purity of the color is improved;
the central first transparent conductive layer, the central second transparent conductive layer, the first metal layer and the second metal layer form a resonant cavity, and the resonant wavelength is adjusted by adjusting the thicknesses of the central first transparent conductive layer, the central second transparent conductive layer, the first metal layer and the second metal layer;
the chalcogenide phase change material layer is used for obtaining different transmission spectrums through phase change or thickness change; the resonance wavelength increases as the thickness of the chalcogenide phase change material increases, the peak position of the transmission spectrum moves toward the infrared direction, and the resonance wavelength increases when the chalcogenide phase change material layer is switched from an amorphous state to a crystalline state.
Further preferably, the chalcogenide phase change material layer is a tellurium sulfide material or a tellurium selenide material, and the thickness is 10 nm-100 nm;
further preferably, the first metal layer and the second metal layer are made of silver, platinum, aluminum, gold, tungsten or titanium materials, and have a thickness of 5nm to 20nm.
Further preferably, the central first transparent conductive layer, the central second transparent conductive layer, the bottom transparent conductive layer and the top transparent conductive layer are all made of indium tin oxide or aluminum doped zinc oxide materials; the thickness of the top transparent conductive layer and the bottom transparent conductive layer is set to be 10 nm-150 nm; the thickness of the central first transparent conductive layer and the central second transparent conductive layer is 0 nm-200 nm.
Further preferably, the electrically tunable optical film is obtained by performing layer-by-layer film coating by a magnetron sputtering method.
Further preferably, the phase change of the chalcogenide phase change material layer is achieved by:
adopting laser direct writing operation, and when the power of the laser reaches a preset degree, converting the chalcogenide phase change material layer from an amorphous state to a crystalline state;
or annealing the electrically tunable optical film to effect a transition of the chalcogenide phase change material layer from an amorphous state to a crystalline state.
Further preferably, the thickness of the bottom transparent conductive layer and the top transparent conductive layer are equal; the thickness of the first metal layer is equal to that of the second metal layer; the thickness of the central first transparent conductive layer is equal to that of the central second transparent conductive layer.
Further preferred, the electrically tunable optical film is used for electrochromic devices based on color filter characteristics.
Further preferred, the electrically tunable optical film is used for a reflective filter based on a color filter film, wherein the substrate is Ag.
In general, the above technical solutions conceived by the present invention have the following beneficial effects compared with the prior art:
the invention provides an electrically adjustable optical film, wherein a functional layer of a chalcogenide phase change material mainly selects Sb 2 S 3 And Sb (Sb) 2 Se 3 The material has lower extinction coefficient in visible light and near infrared spectrum ranges, can realize higher transmittance when taking a transparent material as a substrate, has larger contrast between two phases and stronger adjustment capability, and provides an innovative nano film structure for the future electrochromic technology.
Compared with electrochemical mechanisms and the like to construct adjustable colors, the chemical nano film provided by the invention has the advantages that the optical film is very simple to depend on the length of the film modulation optical cavity, and the stability is high. For example, using the principles of Fabry-Perot resonant cavities, the resonance conditions of the cavity can be tuned by varying the thickness of one or more layers. Or change the optical properties of one material in the stack without changing the film thickness. The refractive index of the specific layer is changed to change the optical resonance condition of the cavity, and the refractive index of the phase change material is changed before and after phase change, so that the phase change material can be used as a functional layer material. Meanwhile, the electrically adjustable optical film provided by the invention has the advantages of extremely short switching time, stable color and long service life.
Drawings
FIG. 1 is a schematic view of an optical film according to the present invention;
FIG. 2 is a refractive index n of a material according to the present invention;
FIG. 3 is the extinction coefficient k of the material of the invention;
FIG. 4 is a transmission spectrum obtained by transmission in example 1 of the present invention;
FIG. 5 is a chromaticity diagram obtained by transmission in example 1 of the present invention;
FIG. 6 is a transmission spectrum obtained by transmission in example 2 of the present invention;
FIG. 7 is a chromaticity diagram obtained by transmission in example 2 of the present invention;
FIG. 8 is a chromaticity diagram obtained by transmission in example 3 of the present invention;
fig. 9 is a graph showing peak position change obtained by transmission in example 4 of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
In optical design, the wavelength range of visible light is 400nm to 760nm, and the wavelength range of near infrared light is 760 to 2500nm. The reflectivity of Ag is less than 50% in 0.4-0.45 μm and more than 50% in 0.45-0.76 μm, so Ag is suitable as a metal reflecting material film layer in the wave band of 0.45-0.76 μm to improve the reflectivity.
The use of Phase Change Materials (PCMs) in reconfigurable dynamic photonic devices is of extremely high research value, however, the most commonly used phase change materials at present, such as GST225, exhibit large absorption losses in one or both states, limiting their use. And Sb (Sb) 2 S 3 And Sb (Sb) 2 Se 3 Is proved to be a substitute of sulfide PCM for common production with low loss and reversibility, and the refractive index of the two materials is well matched with the silicon photon process. In the last decade, sb 2 S 3 The film is widely applied to the fields of optical fibers, electrostatic copying, novel storage devices, photoelectric and microwave device manufacturing and the like. Sb (Sb) 2 S 3 The thin film has good optical transmittance, wide band gap and good electrical properties.
The functional layer in the invention mainly selects Sb 2 S 3 And Sb (Sb) 2 Se 3 The material has lower extinction coefficient in visible light and near infrared spectrum ranges, can realize higher transmittance when taking a transparent material as a substrate, has larger contrast between two phases and stronger adjustment capability, and provides an innovative nano film structure for the future electrochromic technology.
Compared with electrochemical mechanisms and the like to construct adjustable colors, the electrically adjustable nano film provided by the invention has the advantages that the optical film is very simple to depend on the length of the film modulation optical cavity, and the stability is high. For example, using the principles of Fabry-Perot resonant cavities, the resonance conditions of the cavity can be tuned by varying the thickness of one or more layers. Or change the optical properties of one material in the stack without changing the film thickness. The refractive index of the specific layer is changed to change the optical resonance condition of the cavity, and the refractive index of the phase change material is changed before and after phase change, so that the phase change material can be used as a functional layer material.
The electrically adjustable optical film structure provided by the invention is mainly based on a nano optical resonant cavity, and different filtering effects are achieved by adjusting the thickness design of each layer. As a transmissive film, a total of seven layers (excluding the substrate) are, in order from bottom to top, a bottom transparent conductive layer, a first metal layer, a central first transparent conductive layer, a chalcogenide phase change material layer, a central second transparent conductive layer, a second metal layer, and a top transparent conductive layer; the substrate is a transparent substrate; the material is of a symmetrical structure, and the first or second transparent conducting layer in the center can be removed; the thickness of the film is adjusted to obtain rich colors, in the optimized structure, the electrochromic effect can be achieved after the phase of the phase change material is changed, the peak position of the transmission spectrum can move by more than one hundred nanometers at most, and meanwhile, the method has the advantages of extremely short switching time, stable color and long service life;
the bottom transparent conductive layer and the top transparent conductive layer can be made of Indium Tin Oxide (ITO) or aluminum doped zinc oxide materials, and can be used as a bottom electrode and a top electrode, so that the thin film structure can be electrically operated, and the phase change material is subjected to phase change by utilizing resistance heat; the material can also be used as a dielectric layer, and the resonant wavelength is adjusted by adjusting the thickness of the material so as to obtain different transmission spectrums; the range in which the thickness can be set is large because of the high transmittance.
Further preferably, the chalcogenide phase change material layer may employ Sb 2 S 3 Of materials or other phase-change materials, due to Sb 2 S 3 The thickness of the chalcogenide phase change material layer is 10 nm-100 nm; according to the required filtering effect, the peak position of the transmission spectrum moves towards infrared along with the increase of the thickness;
further preferably, the first metal layer and the second metal layer are both made of materials with high reflectivity and good conductivity, such as silver, platinum or titanium; as the thickness increases, the transmittance decreases, generally 5nm to 20nm is adopted;
further preferably, the central first transparent conductive layer, the central second transparent conductive layer, the bottom transparent conductive layer and the top transparent conductive layer are all made of zinc oxide materials doped with indium tin oxide or aluminum, so that the effects of high conductivity and transmittance and oxidation prevention of the metal layer can be achieved; the thicknesses of the top transparent conductive layer and the bottom transparent conductive layer can be set to be 10-150 nm, and the thicknesses of the central first transparent conductive layer and the central second transparent conductive layer are generally 10-100 nm; if the thicknesses of the central first transparent conductive layer and the central second transparent conductive layer are too thick, more than one peak position can appear, and the specific embodiment depends on the optical filtering effect to be achieved;
in a specific optical design, the absorption and reflection capacities of the structure for different wavebands are changed mainly by adjusting the thicknesses of different layers. The n, k parameters (i.e., refractive index and extinction coefficient) of the materials mentioned in this invention are shown in fig. 2 and 3. Analysis of optical properties of materials, e.g. Sb 2 S 3 The absorption loss of the material in the blue wave band is large, the material has large transmittance in the blue-green wave band, and Sb is required to be arranged 2 S 3 Is smaller in thickness.
The electrically tunable optical film can be prepared by magnetron sputtering or other common processes for preparing films for layer-by-layer film plating; when the power of the laser reaches a certain degree, the chalcogenide phase change material layer can be converted from an amorphous state to a crystalline state, and after the material is subjected to phase change, the refractive index and the extinction coefficient are changed, especially in a visible wave band, so that the transmission color is changed, and the peak position of the transmission spectrum is moved. The degree of variation depends on the structure of the film system, in particular the thickness of the PCM, in general, the higher the thickness, the more pronounced the degree of movement; when the power of the laser is within a certain range, partial phase change can also occur, the peak value of the transmission spectrum is between the amorphous state and the crystalline state;
sulfur can also be written directly by other means than laserThe phase change material layer undergoes phase change, for example, the electrically tunable optical film is subjected to annealing operation at a certain temperature, and the annealing temperature depends on the phase change material; for example, sb 2 S 3 The amorphous to crystalline transformation of the film can occur by annealing at 280 ℃.
Example 1
The film design is shown in FIG. 1, a transparent quartz substrate is adopted, and Sb is adopted as the phase change material 2 S 3 A material. The thickness of the film layer from bottom to top was set to 20nm,15nm,10nm,15 nm,20nm. When Sb is 2 S 3 When the material is amorphous, green can be obtained and when it is switched to the crystalline state, orange can be obtained. The transmission spectrum curve obtained by simulation using Essential Macleod software is shown in fig. 4, and it can be seen that the peak position is shifted by tens of nanometers before and after phase transition, and the peak value is reduced. The transmission spectrum obtained by simulation was processed by the Chromaticity Diagram module of the origin lab as a chromaticity diagram (using the CIE1931 standard chromaticity system, the same applies hereinafter), as shown in fig. 5, indicating that the color was switched from light green to orange.
Example 2
The thin film design is shown in FIG. 1, a transparent quartz substrate is adopted, and Sb is adopted as the phase change material 2 S 3 A material. The thickness of the film layer from bottom to top was set to 100nm,15nm,30nm,15 nm,100nm. Simulation using Essential Macleod software to obtain a transmission spectrum curve as shown in FIG. 6, when Sb 2 S 3 When the material is in an amorphous state, red can be obtained, when the material is switched into the crystalline state, the visible wave band transmittance is low, the peak position moves to infrared, and the peak position moves by about 150nm, so that the maximum adjusting capability of the structure is shown. The transmission spectrum obtained by simulation was processed into a chromaticity diagram by the Chromaticity Diagram module of the origin lab, as shown in fig. 7.
Example 3
The thin film design is shown in FIG. 1, a transparent quartz substrate is adopted, and Sb is adopted as the phase change material 2 S 3 A material. The thickness of the film layer from bottom to top was set to 100nm,15nm,10nm,30nm,10nm,15nm,100nm. The phase-change material layer is arranged in an amorphous state, the thickness of ITO of the upper layer and the lower layer of the phase-change material layer is changed, and the thickness of the two layers is setEqual, increasing from 10nm to 150nm, with a step size of 10nm, the simulated transmission spectrum was processed into a chromaticity diagram by the Chromaticity Diagram module of originLab, as shown in FIG. 8. The color gamut can be seen to be larger, and a plurality of bright colors can be obtained by changing the thickness setting of the ITO layer.
Example 4
The thin film design is shown in FIG. 1, a transparent quartz substrate is adopted, and Sb is adopted as the phase change material 2 S 3 A material. The thickness of the film layer from bottom to top was set to 100nm,15nm,30nm,10nm,30nm,15nm,100nm. The phase change material layer is respectively arranged into an amorphous state and a crystalline state, the thickness of the phase change material layer is changed, the thickness is increased from 10nm to 50nm, and the step length is 10nm. The transmission spectrum curve is obtained by simulation through Essential Macleod software, the wavelength with the highest transmittance is taken as the peak position, the obtained result is shown in fig. 9, after crystallization, the peak position can move to infrared, and in a certain range, the adjusting capability is enhanced along with the increase of the layer thickness of the phase change material.
In summary, compared with the prior art, the invention has the following advantages:
the invention provides an electrically adjustable optical film, wherein a functional layer of a chalcogenide phase change material mainly selects Sb 2 S 3 And Sb (Sb) 2 Se 3 The material has lower extinction coefficient in visible light and near infrared spectrum ranges, can realize higher transmittance when taking a transparent material as a substrate, has larger contrast between two phases and stronger adjustment capability, and provides an innovative nano film structure for the future electrochromic technology.
Compared with electrochemical mechanisms and the like to construct adjustable colors, the chemical nano film provided by the invention has the advantages that the optical film is very simple to depend on the length of the film modulation optical cavity, and the stability is high. For example, using the principles of Fabry-Perot resonant cavities, the resonance conditions of the cavity can be tuned by varying the thickness of one or more layers. Or change the optical properties of one material in the stack without changing the film thickness. The refractive index of the specific layer is changed to change the optical resonance condition of the cavity, and the refractive index of the phase change material is changed before and after phase change, so that the phase change material can be used as a functional layer material. Meanwhile, the electrically adjustable optical film provided by the invention has the advantages of extremely short switching time, stable color and long service life.
It will be readily appreciated by those skilled in the art that the foregoing description is merely a preferred embodiment of the invention and is not intended to limit the invention, but any modifications, equivalents, improvements or alternatives falling within the spirit and principles of the invention are intended to be included within the scope of the invention.
Claims (8)
1. An electrically tunable optical film comprising a bottom transparent conductive layer, a first metal layer, a central first transparent conductive layer, a chalcogenide phase change material layer, a central second transparent conductive layer, a second metal layer, and a top transparent conductive layer disposed over a transparent substrate from bottom to top;
the bottom transparent conductive layer and the top transparent conductive layer are respectively used as a bottom electrode and a top electrode and are used for electrically operating the chalcogenide phase change material, and the chalcogenide phase change material layer is subjected to phase change by utilizing resistance heat; the top transparent conductive layer is also used for preventing the second metal layer from being oxidized by contact with air;
the higher the thickness of the first metal layer and the second metal layer is, the lower the transmittance is, so that the half-width of the spectrum is reduced, and the purity of the color is improved;
the central first transparent conductive layer, the central second transparent conductive layer, the first metal layer and the second metal layer form a resonant cavity, and resonance wavelength is adjusted by adjusting thicknesses of the central first transparent conductive layer, the central second transparent conductive layer, the first metal layer and the second metal layer;
the chalcogenide phase change material layer is used for obtaining different transmission spectrums through phase change or thickness change; along with the increase of the thickness of the chalcogenide phase change material, the resonance wavelength is increased, and the peak position of the transmission spectrum moves towards the infrared direction; and the resonant wavelength increases when the chalcogenide phase change material layer is switched from an amorphous state to a crystalline state.
2. The electrically tunable optical film of claim 1, wherein the chalcogenide phase change material layer is a tellurium sulfide material or a tellurium selenide material having a thickness of 10nm to 100nm.
3. An electrically tunable optical film according to claim 1 or 2, wherein the first and second metal layers are made of silver, platinum, aluminium, gold, tungsten or titanium material and have a thickness of 5nm to 20nm.
4. The electrically tunable optical film of claim 3, wherein the center first transparent conductive layer, the center second transparent conductive layer, the bottom transparent conductive layer, and the top transparent conductive layer are each made of indium tin oxide or aluminum doped zinc oxide material; the thickness of the top transparent conductive layer and the bottom transparent conductive layer is set to be 10 nm-150 nm; the thickness of the central first transparent conductive layer and the central second transparent conductive layer is 0 nm-200 nm.
5. The electrically tunable optical film of claim 1, wherein the electrically tunable optical film is obtained by layer-by-layer coating using a magnetron sputtering method.
6. The electrically tunable optical film of claim 1 or 2, wherein the phase change of the chalcogenide phase change material layer is achieved by:
adopting laser direct writing operation, and when the power of the laser reaches a preset degree, converting the chalcogenide phase change material layer from an amorphous state to a crystalline state;
or annealing the electrically tunable optical film to effect a transition of the chalcogenide phase change material layer from an amorphous state to a crystalline state.
7. Electrically tunable optical film according to claim 1 or 2, characterized in that it is used for electrochromic equipment based on color filter properties.
8. Electrically tunable optical film according to claim 1 or 2, characterized in that it is used for a reflective filter based on a color filter film, wherein the substrate is Ag.
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