CN116573936A - Anion modified piezoelectric ceramic and preparation method thereof - Google Patents

Anion modified piezoelectric ceramic and preparation method thereof Download PDF

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CN116573936A
CN116573936A CN202310850114.4A CN202310850114A CN116573936A CN 116573936 A CN116573936 A CN 116573936A CN 202310850114 A CN202310850114 A CN 202310850114A CN 116573936 A CN116573936 A CN 116573936A
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piezoelectric ceramic
piezoelectric
powder
anionically modified
zirconium
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CN116573936B (en
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吴波
陶红
赵林
吴文娟
马健
罗莉
尔古打机
陈敏
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Chengdu University of Information Technology
Southwest Minzu University
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Southwest Minzu University
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Abstract

The application relates to the technical field of piezoelectric ceramics, and particularly discloses anion modified piezoelectric ceramics and a preparation method thereof, wherein the chemical general formula of the piezoelectric ceramics is as follows: ba (Ba) 0.86 Sr 0.14 Ti 0.92 Zr 0.08 O x3‑0.16 F x0.32 Wherein, the method comprises the steps of, wherein,xfor use with zirconium fluoride ZrF 4 Substituted zirconia ZrO 2 Molar ratio of 0.2-0xAnd is less than or equal to 1. The application utilizes ZrF 4 Substituted part ZrO 2 As a raw material, realize F Substituted for O 2‑ Thereby realizing anion doping. Compared with O 2‑ ,F Has lower chemical valence and stronger electronegativity, is favorable for forming lattice defects, and increases the strength of chemical bonds, thereby enhancing the ferroelectric polarity, further improving the piezoelectric and dielectric properties of the piezoelectric ceramics and leading the piezoelectric ceramics to be pressedThe electroceramics have ultrahigh piezoelectric and dielectric properties and piezoelectric constantsd 33 Up to 950-1245pC/N, relative dielectric constant at room temperatureε r Up to 3201-3786; is far higher than the piezoelectric property of barium titanate ceramics.

Description

Anion modified piezoelectric ceramic and preparation method thereof
Technical Field
The application relates to the technical field of piezoelectric ceramics, in particular to anion modified piezoelectric ceramics and a preparation method thereof.
Background
The piezoelectric effect is a physical effect of the interconversion between charge forces and was found in quartz crystals in 1880 by curie brothers. The piezoelectric effect includes a positive piezoelectric effect and a negative piezoelectric effect, that is, under the action of an external force, the piezoelectric body generates dielectric polarization proportional to stress, positive and negative charges appear at both ends, and after the external force is removed, the piezoelectric body returns to an uncharged state, which is called a positive piezoelectric effect; when an electric field is applied to the crystal, deformation or stress proportional to the applied electric field is generated, and when the electric field is removed, the deformation disappears, which is called an inverse piezoelectric effect. Materials having a piezoelectric effect are called piezoelectric materials, mainly organic and inorganic piezoelectric materials. Among the inorganic piezoelectric materials, perovskite-type piezoelectric ceramics have been widely studied and used.
Since Jaffe et al reported for the first time in lead zirconate titanate (PZT) in 1954, lead-based piezoceramics have dominated commercial applications for their excellent piezoelectric properties and good temperature stability. However, lead-based piezoelectric ceramics contain a large amount of lead (Pb) element, and cause serious loss to the environment and human body. Therefore, the development of lead-free piezoelectric ceramics is an urgent task in the current research, and the development of lead-free piezoelectric ceramic materials with high performance has great significance for sustainable development of human society.
The development of piezoelectric ceramics not only needs to consider leadless, but also needs to consider obtaining high-performance leadless piezoelectric ceramics, i.e. the prepared leadless piezoelectric ceramics needs to have higher piezoelectric constantd 33 And relative dielectric constantε r
Disclosure of Invention
The application aims to provide anion modified piezoelectric ceramic and a preparation method thereof, and ZrF is adopted 4 Substituted for ZrO 2 Obtaining lead-free piezoelectric ceramic with ultrahigh piezoelectric constant and piezoelectric constantd 33 Up to 950-1245pC/N, relative dielectric constant at room temperatureε r Up to 3201-3786.
The application is realized by the following technical scheme:
an anionically modified piezoelectric ceramic having the chemical formula:
Ba 0.86 Sr 0.14 Ti 0.92 Zr 0.08 O x3-0.16 F x0.32 wherein, the method comprises the steps of, wherein,xfor use with zirconium fluoride ZrF 4 Substituted zirconia ZrO 2 Molar ratio of 0.2-0xAnd is less than or equal to 1. According to the piezoelectric ceramic, sr and Zr are doped in the barium titanate ceramic, the orthorhombic-tetragonal phase transition temperature and the orthorhombic-tetragonal phase transition temperature of the barium titanate ceramic are adjusted to be close to the room temperature, and the orthorhombic-tetragonal multiphase coexisting junction at the room temperature is constructed. On the basis of ZrF 4 Substituted for ZrO 2 As raw material, and adjusting the molar ratio of substitution, an anion defect structure is established, and chemical bonds are enhanced, so that the ferroelectric polarity of the material is improved.
A preparation method of anion modified piezoelectric ceramic, fluoride is utilized to replace oxide, so that fluoride ions in the piezoelectric ceramic are utilized to replace oxygen, and lead-free piezoelectric ceramic is obtained, and the piezoelectric constant of the lead-free piezoelectric ceramic is obtainedd 33 950-1245pC/N, relative dielectric constant at room temperatureε r 3201 to 3786.
Further, the method comprises the following steps:
s101, rolling and ball milling by taking barium carbonate, strontium carbonate, titanium dioxide, zirconium oxide and zirconium fluoride as raw materials and absolute ethyl alcohol as a ball milling medium according to mole percent to obtain powder;
s102, drying the powder obtained in the step S101 to obtain uniformly mixed powder;
s103, presintering the powder obtained in the step S102 at 700-1200 ℃ for 2-3 hours to obtain dry powder;
s104, adding a polyvinyl alcohol aqueous solution into the dry powder obtained in the step S103, and sequentially granulating, pressing and discharging glue to obtain a ceramic blank;
and S105, sintering the ceramic body obtained in the step S104 at 1400-1450 ℃ for 3-5 hours to obtain the piezoelectric ceramic body.
Further, the method also comprises the following steps:
and S106, plating silver electrodes on the piezoelectric ceramic body obtained in the step S105, and applying voltage to polarize the piezoelectric ceramic body.
Further, in step S101, all of barium carbonate, strontium carbonate, titanium dioxide, zirconium oxide, and zirconium fluoride are analytically pure.
Further, in step S101, barium carbonate, strontium carbonate, titanium dioxide, zirconium oxide and zirconium fluoride are all in a powdery structure.
Further, the particle size of the barium carbonate, the strontium carbonate, the titanium dioxide, the zirconium oxide and the zirconium fluoride is 100-800 microns.
Further, in step S101, the ball milling tank used for ball milling is a nylon tank; the adopted grinding balls are zirconium balls.
Further, in step S103, the powder is placed into a corundum crucible, and the corundum crucible is presintered for 2-3 hours at 700-1200 ℃ to obtain dry powder.
Further, in step S104, the mass percentage of the polyvinyl alcohol aqueous solution is 6wt% to 8wt%.
Further, in step S104, the specific pressing process is as follows: pressing the powder into a sheet shape by using an isostatic press; the pressure of the isostatic press was 250MPa.
Compared with the prior art, the application has the following advantages and beneficial effects:
1. the application utilizes ZrF 4 Substituted part ZrO 2 As a raw material, realize F - Substituted for O 2- Thereby realizing anion doping. Compared with O 2- ,F - The chemical valence is lower, the electronegativity is stronger, the formation of lattice defects is facilitated, and the strength of chemical bonds is increased, so that the ferroelectric polarity is enhanced, the piezoelectric and dielectric properties of the piezoelectric ceramic are further improved, and the piezoelectric ceramic has ultrahigh piezoelectric and dielectric properties and piezoelectric constantsd 33 Up to 950-1245pC/N, relative dielectric constant at room temperatureε r Up to 3201-3786; is far higher than the piezoelectric property of barium titanate ceramics.
2. The piezoelectric ceramic material does not contain lead element, belongs to an environment-friendly material, accords with the sustainable development strategy in the previous international social development, and has a very wide application range.
3. The preparation method of the piezoelectric ceramic material has simple and stable process, is easy to operate and is convenient for industrial production.
Drawings
The accompanying drawings, which are included to provide a further understanding of embodiments of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the principles of the application. In the drawings:
FIG. 1 is a schematic flow chart of a method for preparing a piezoelectric ceramic according to the present application;
FIG. 2 is an X-ray diffraction pattern of the piezoelectric ceramic material according to examples 1 to 6 of the present application, wherein (a) is a normal X-ray diffraction pattern and (b) is an X-ray diffraction pattern with characteristic peaks enlarged;
FIG. 3 is a schematic diagram showing the change of dielectric constant with temperature within the range of-120-200 ℃ for the piezoelectric ceramic material provided in embodiment 1 of the present application;
FIG. 4 is a schematic diagram showing the change of dielectric constant with temperature at 15-35 ℃ for the piezoelectric ceramic material according to embodiment 1 of the present application;
FIG. 5 is a schematic diagram showing the change of dielectric constant with temperature at 35-50deg.C of the piezoelectric ceramic material according to embodiment 1 of the present application;
FIG. 6 is a schematic diagram showing the change of dielectric constant with temperature in the range of-120-200 ℃ for the piezoelectric ceramic material provided in embodiment 2 of the present application;
FIG. 7 is a schematic diagram showing the change of dielectric constant with temperature at 15-35 ℃ for the piezoelectric ceramic material according to embodiment 2 of the present application;
FIG. 8 is a schematic diagram showing the change of dielectric constant with temperature at 35-50deg.C of the piezoelectric ceramic material according to embodiment 2 of the present application;
FIG. 9 is a schematic diagram showing the change of dielectric constant with temperature in the range of-120-200 ℃ for the piezoelectric ceramic material provided in embodiment 3 of the present application;
FIG. 10 is a schematic diagram showing the change of dielectric constant with temperature at 15-35 ℃ for the piezoelectric ceramic material according to embodiment 3 of the present application;
FIG. 11 is a schematic diagram showing the change of dielectric constant with temperature at 35-50deg.C of the piezoelectric ceramic material according to embodiment 3 of the present application;
FIG. 12 is a schematic diagram showing the change of dielectric constant with temperature in the range of-120-200deg.C for the piezoelectric ceramic material provided in example 4 of the present application;
FIG. 13 is a schematic diagram showing the change of dielectric constant with temperature at 15-35 ℃ for the piezoelectric ceramic material according to example 4 of the present application;
FIG. 14 is a schematic diagram showing the change of dielectric constant with temperature at 35-50deg.C for the piezoelectric ceramic material according to example 4 of the present application;
FIG. 15 is a graph showing the dielectric constant of the piezoelectric ceramic material according to embodiment 5 of the present application at-120-200deg.C with temperature;
FIG. 16 is a graph showing the dielectric constant of the piezoelectric ceramic material according to embodiment 5 of the present application at 15-35 ℃ with temperature;
FIG. 17 is a schematic diagram showing the change of dielectric constant with temperature at 35-50deg.C for the piezoelectric ceramic material according to example 5 of the present application;
FIG. 18 is a graph showing the dielectric constant of the piezoelectric ceramic material according to embodiment 6 of the present application at-120 to 200 ℃ with temperature;
FIG. 19 is a graph showing the dielectric constant of the piezoelectric ceramic material according to embodiment 6 of the present application over a temperature range of 15-35 ℃ with temperature;
FIG. 20 is a graph showing the change of dielectric constant with temperature at 35-50deg.C for the piezoelectric ceramic material according to example 6 of the present application.
Description of the embodiments
For the purpose of making apparent the objects, technical solutions and advantages of the present application, the present application will be further described in detail with reference to the following examples and the accompanying drawings, wherein the exemplary embodiments of the present application and the descriptions thereof are for illustrating the present application only and are not to be construed as limiting the present application.
Examples:
an anionically modified piezoelectric ceramic having the chemical formula:
Ba 0.86 Sr 0.14 Ti 0.92 Zr 0.08 O x3-0.16 F x0.32 wherein, the method comprises the steps of, wherein,xfor use with zirconium fluoride ZrF 4 Substituted zirconia ZrO 2 Molar ratio of 0.ltoreq.0xIs less than or equal to 1, wherein,x=0 as control group.
The BaTiO is preferred to be prepared by using Sr and Zr elements 3 Ceramic modification to make fired Ba 0.86 Sr 0.14 Ti 0.92 Zr 0.08 O 3 The ceramic presents a three-party-orthogonal-tetragonal multiphase coexisting structure near room temperature, and on the basis, F element is introduced again to construct an anion defect structure and strengthen the polarity, so that the ultra-high piezoelectric performance is obtained. The piezoelectric property and dielectric property of the piezoelectric ceramic are far higher than those of barium titanate ceramics.
In the piezoelectric ceramic, according to the principle of equilibrium of electricity valence, the atomic ratios of the elements Ba, sr, ti, zr are respectively: 0.86, 0.14, 0.92, and 0.08. Otherwise, when the proportion is changed, the phase structure is changed, so that the electrical property is affected. Even when the proportion is severely deviated, excessive elements tend to form impurities during sintering, resulting in a decrease in piezoelectric properties.
The present embodiment utilizes ZrF 4 Substituted part ZrO 2 As a raw material, realize F - Substitution ofO 2- Thereby realizing anion doping and obtaining the lead-free piezoelectric ceramic. Compared with O 2- ,F - The chemical valence is lower, the electronegativity is stronger, the formation of lattice defects is facilitated, and the strength of chemical bonds is increased, so that the ferroelectric polarity is enhanced, the piezoelectric and dielectric properties of the piezoelectric ceramic are further improved, and the piezoelectric ceramic has ultrahigh piezoelectric and dielectric properties and piezoelectric constantsd 33 Up to 950-1245pC/N, relative dielectric constant at room temperatureε r Up to 3201-3786; is far higher than the piezoelectric property of barium titanate ceramics.
As shown in figure 1, a preparation method of anion modified piezoelectric ceramic utilizes fluoride to replace oxide to realize that fluoride ions replace oxygen in piezoelectric ceramic to obtain lead-free piezoelectric ceramic, and the piezoelectric constant of the lead-free piezoelectric ceramic is equal to that of the lead-free piezoelectric ceramicd 33 950-1245pC/N, relative dielectric constant at room temperatureε r 3201 to 3786.
The method specifically comprises the following steps:
s101, according to mole percent, using barium carbonate BaCO 3 Strontium carbonate SrCO 3 Titanium dioxide TiO 2 Zirconium oxide ZrO 2 And zirconium fluoride is used as a raw material, absolute ethyl alcohol is used as a ball milling medium for rolling ball milling to obtain powder; barium carbonate, strontium carbonate, titanium dioxide, zirconium oxide and zirconium fluoride ZrF 4 All adopt analytical purity; barium carbonate, strontium carbonate, titanium dioxide, zirconium oxide and zirconium fluoride are all in powder structures; the particle size of the barium carbonate, the strontium carbonate, the titanium dioxide, the zirconium oxide and the zirconium fluoride is 100-800 microns.
Specifically, the raw materials and absolute ethyl alcohol are subjected to rolling ball milling in a ball milling tank, wherein the ball milling tank is a nylon tank, and grinding balls in the nylon tank are zirconium balls.
S102, drying the powder obtained in the step S101 to obtain uniformly mixed powder.
S103, presintering the powder obtained in the step S102 at 700-1200 ℃ for 2-3 hours to obtain dry powder; specifically, the powder is placed into a corundum crucible, and the corundum crucible is presintered for 2-3 hours at 700-1200 ℃ to obtain dry powder.
S104, adding a polyvinyl alcohol aqueous solution into the dry powder obtained in the step S103, and sequentially granulating, pressing and discharging glue to obtain a ceramic blank.
Further specifically, 6-8wt% of polyvinyl alcohol aqueous solution is added into the dry powder to be granulated sequentially to obtain powder. The powder is pressed into a sheet shape by an isostatic press, and the shape of the powder can be a round sheet shape or other sheet shapes; the pressure of the dynamic tablet press is 250MPa; the powder is placed in a grinding tool with a cavity during pressing.
In the application, the content of the polyvinyl alcohol aqueous solution is preferably 6wt% to 8wt%. If the added aqueous solution of polyvinyl alcohol is less than 6wt%, the sample is liable to be non-formed, and the piezoelectric ceramic material cannot be obtained, and if it is more than 8wt%, the piezoelectric property is liable to be lowered or the sample has voids, resulting in the failure to obtain a dense piezoelectric ceramic material.
And S105, sintering the ceramic body obtained in the step S104 at 1400-1450 ℃ for 3-5 hours to obtain the piezoelectric ceramic body.
And S106, plating silver electrodes on the piezoelectric ceramic body obtained in the step S105, and applying voltage to polarize the piezoelectric ceramic body.
Specifically, the piezoelectric ceramic body is coated with silver electrodes, and then the ceramic sheet is polarized for 10-20 minutes under the condition of 2-3 kV/cm by using a withstand voltage tester.
The preparation method of the piezoelectric ceramic provided by the embodiment can obviously improve the piezoelectric constant and the dielectric constant of the piezoelectric ceramic material provided by the embodiment, so that the piezoelectric ceramic material provided by the application has a wide application range. In addition, the piezoelectric ceramic material of the embodiment of the application does not contain lead element, belongs to an environment-friendly material, accords with the sustainable development strategy in the current international social development, and is beneficial to environmental protection.
The preparation method of the piezoelectric ceramic material provided by the embodiment of the application has the advantages of simple and stable process, easiness in operation and convenience in industrial production.
In order to better understand the technical scheme provided by the application, the following specific processes for preparing the piezoelectric ceramic material and the performances thereof by applying the preparation method provided by the embodiment of the application are respectively described in a plurality of specific examples.
Example 1:
selected from the general formulaxThe chemical formula of the piezoelectric ceramic material obtained in the embodiment is =0: ba (Ba) 0.86 Sr 0.14 Ti 0.92 Zr 0.08 O 3 The method for preparing the piezoelectric ceramic comprises the following steps:
to analytically pure barium carbonate BaCO 3 Strontium carbonate SrCO 3 Titanium dioxide TiO 2 Zirconium oxide ZrO 2 The method comprises the steps of taking the raw materials as raw materials, accurately weighing the raw materials according to mole percentage, adding absolute ethyl alcohol as a ball milling medium, rolling and ball milling for 24 hours, taking out and drying to obtain mixed dry powder; the obtained dry powder is kept at 1200 ℃ for 2 hours, and then polyvinyl alcohol water solution with the concentration of 8 weight percent is added into the presintered powder for granulation; after granulation, the mixture is preliminarily molded under 10MPa by using a grinding tool with the diameter of 10mm, and then is further molded under 250MPa by using an isostatic press, so that small discs with the diameter of 10mm and the thickness of 1mm are formed, and glue is arranged. Sintering the small discs subjected to glue discharging at different temperatures and different heat preservation times to obtain ceramic sheets; finally, the surface of the sintered ceramic sheet is coated with a silver electrode and polarized for 20 minutes under the voltage of 3kV in a silicone oil bath. The ceramic sheet after polarization was left to stand in air for 24 hours, and electrical properties were tested using the IEEE standard.
Example 2:
selected from the general formulaxThe chemical formula of the piezoelectric ceramic material obtained in the embodiment is =0.2: ba (Ba) 0.86 Sr 0.14 Ti 0.92 Zr 0.08 O 2.968 F 0.064 . The method of preparing the ceramic of example 2 of the present application is similar to that of example 1, except that the raw material species is increased in analytically pure ZrF 4 The method comprises the steps of carrying out a first treatment on the surface of the The molar ratios of the starting materials were calculated, weighed and prepared according to the chemical formula in example 2.
Example 3:
selected from the general formulaxThe chemical formula of the piezoelectric ceramic material obtained in the embodiment is =0.4: ba (Ba) 0.86 Sr 0.14 Ti 0.92 Zr 0.08 O 2.936 F 0.128 . The method for preparing the ceramic of example 3 of the present application is similar to that of example 1, except thatIn that the raw material species is increased with analytically pure ZrF 4 The method comprises the steps of carrying out a first treatment on the surface of the The molar ratios of the starting materials were calculated, weighed and prepared according to the chemical formula in example 3.
Example 4:
selected from the general formulaxThe chemical formula of the piezoelectric ceramic material obtained in the embodiment is =0.6: ba (Ba) 0.86 Sr 0.14 Ti 0.92 Zr 0.08 O 2.904 F 0.192 . The method of preparing the ceramic of example 4 of the present application is similar to that of example 1, except that the raw material species is increased in analytically pure ZrF 4; The molar ratios of the starting materials were calculated, weighed and prepared according to the chemical formula in example 4.
Example 5:
selected from the general formulaxThe chemical formula of the piezoelectric ceramic material obtained in the embodiment is =0.8: ba (Ba) 0.86 Sr 0.14 Ti 0.92 Zr 0.08 O 2.872 F 0.256 . The method of preparing the ceramic of example 5 of the present application is similar to that of example 1, except that the raw material species is increased in analytically pure ZrF 4 The method comprises the steps of carrying out a first treatment on the surface of the The molar ratios of the starting materials were calculated, weighed and prepared according to the chemical formula in example 5.
Example 6:
selected from the general formulaxThe chemical formula of the piezoelectric ceramic material obtained in the embodiment is given by =1: ba (Ba) 0.86 Sr 0.14 Ti 0.92 Zr 0.0 8 O 2.84 F 0.32 . The method of preparing the ceramic of example 6 of the present application is similar to that of example 1, except that the raw material species is increased in analytically pure ZrF 4 : the molar ratios of the starting materials were calculated, weighed and prepared according to the chemical formula in example 6.
It should also be noted that examples 2-6 differ in burn-in and sintering conditions: the presintering condition of example 1 was 1200 ℃ for 2 hours, and the sintering condition was 1420 ℃ for 3 hours; the presintering condition of example 2 is 1100 ℃ for 2 hours, and the sintering condition is 1430 ℃ for 3 hours; the presintering condition of example 3 was 950℃for 2 hours and the sintering condition was 1430℃for 3 hours; the pre-sintering condition of example 4 was 800℃for 3 hours and the sintering condition was 1435℃for 3 hours; the presintering condition of example 5 was 700℃for 2 hours, and the sintering condition was 1425℃for 5 hours; the pre-sintering condition of example 6 was 700℃for 2 hours and the sintering condition was 1400℃for 5 hours.
FIG. 2 is a powder X-ray diffraction pattern of the piezoelectric ceramic materials provided in examples 1 to 6 of the present application.
As shown in fig. 2 (a), 7 strong characteristic peaks appear between 20 and 70 °, and as the diffraction angle increases, the following steps are sequentially performed: [100]、[110]、[111]、[002]、[210]、[211]、[220]This ceramic is shown to be a typical perovskite structure. As shown in FIG. 2 (b), a significant peak separation occurred in the range of 45 to 46℃as respectively [002 ]]And [200 ]]A peak. And the two peaks are fused, and the peak intensity ratio is more than 1:2 and less than 2:1. And in ceramicsxThe content is 0-1.0, and the XRD spectrum is not obviously changed, which indicates that the ceramics have multiphase coexisting structures.
Fig. 3, 6, 9, 12, 15 and 18 are schematic diagrams showing the changes of the relative dielectric constants of the piezoelectric ceramic materials according to examples 1 to 6 of the present application with temperature at 0.1kHz, 1kHz,10kHz and 100kHz, respectively.
FIGS. 3, 6, 9, 12, 15 and 18 are ZrF in the piezoelectric ceramic materials of examples 1 to 6, respectively 4 Substituted for ZrO 2 The relative dielectric constants at 0, 0.2, 0.4, 0.6, 0.8, and 1.0 vary with temperature. From the curve, it can be found that the ceramic provided by each embodiment has 3 dielectric peaks at-120-200 ℃, and the three-party-orthogonal, orthogonal-tetragonal and tetragonal-cubic phase changes respectively correspond to the temperature rise. And along withxThe phase transition temperature did not significantly shift, indicating that the anion doping did not result in a change in phase structure. And the three-party-orthogonal and the orthogonal-tetragonal are both positioned near the room temperature, and the combination of XRD can prove that the ceramic materials are all in multi-phase coexistence of 'three-party-orthogonal-tetragonal' at the room temperature. When the temperature is higher than 60 ℃, the ceramic presents a cubic phase, does not have ferroelectricity any more, the piezoelectric performance disappears, and the dielectric performance is seriously deteriorated.
Fig. 4, 7, 10, 13, 16 and 19 are respectively enlarged graphs of the piezoelectric ceramic materials of examples 1 to 6, in which the relative dielectric constant is 15 to 35 ℃, corresponding to the orthogonal-tetragonal phase transition temperature region; fig. 5, 8, 11, 14, 17 and 20 are enlarged graphs of the piezoelectric ceramic materials of examples 1 to 6, respectively, with relative dielectric constants in the range of 35 to 40 ℃ corresponding to the orthogonal-tetragonal phase transition temperature region. By contrast, it can be found that the anion doping can make the orthorhombic-tetragonal phase transition peak more sharp, the dispersion is reduced, the dielectric constant is increased, indicating that the polarity of the material is enhanced.
The present application also carried out tests on the electrical properties of the piezoelectric ceramic materials of examples 1 to 6 described above, and the results obtained are shown in Table 1.
TABLE 1
The foregoing description of the embodiments has been provided for the purpose of illustrating the general principles of the application, and is not meant to limit the scope of the application, but to limit the application to the particular embodiments, and any modifications, equivalents, improvements, etc. that fall within the spirit and principles of the application are intended to be included within the scope of the application.

Claims (10)

1. An anionically modified piezoelectric ceramic, characterized in that the piezoelectric ceramic has the chemical formula:
Ba 0.86 Sr 0.14 Ti 0.92 Zr 0.08 O x3-0.16 F x0.32 ,0.2≤x≤1。
2. the method for producing an anionically modified piezoelectric ceramic according to claim 1, wherein fluoride is used in place of oxide to realize oxygen substitution of fluoride ion in the piezoelectric ceramic, and lead-free piezoelectric ceramic having a piezoelectric constant ofd 33 950-1245pC/N, relative to room temperatureDielectric constantε r 3201 to 3786.
3. The method for preparing an anionically modified piezoelectric ceramic according to claim 2, comprising the steps of:
s101, rolling and ball milling by taking barium carbonate, strontium carbonate, titanium dioxide, zirconium oxide and zirconium fluoride as raw materials and absolute ethyl alcohol as a ball milling medium according to mole percent to obtain powder;
s102, drying the powder obtained in the step S101 to obtain uniformly mixed powder;
s103, presintering the powder obtained in the step S102 at 700-1200 ℃ for 2-3 hours to obtain dry powder;
s104, adding a polyvinyl alcohol aqueous solution into the dry powder obtained in the step S103, and sequentially granulating, pressing and discharging glue to obtain a ceramic blank;
and S105, sintering the ceramic body obtained in the step S104 at 1400-1450 ℃ for 3-5 hours to obtain the piezoelectric ceramic body.
4. A method of preparing an anionically modified piezoelectric ceramic according to claim 3, comprising the further steps of:
and S106, plating silver electrodes on the piezoelectric ceramic body obtained in the step S105, and applying voltage to polarize the piezoelectric ceramic body.
5. A method of preparing an anionically modified piezoelectric ceramic according to claim 3, characterized in that in step S101, barium carbonate, strontium carbonate, titanium dioxide, zirconium oxide and zirconium fluoride are all analytically pure.
6. The method for producing an anionically modified piezoelectric ceramic according to claim 3, wherein in step S101, barium carbonate, strontium carbonate, titanium dioxide, zirconium oxide and zirconium fluoride are all in a powder structure; the particle size of the barium carbonate, the strontium carbonate, the titanium dioxide, the zirconium oxide and the zirconium fluoride is 100-800 microns.
7. The method for preparing an anionically modified piezoelectric ceramic according to claim 3, wherein in step S101, the ball milling pot used for ball milling is a nylon pot; the adopted grinding balls are zirconium balls.
8. The method for preparing an anionically modified piezoelectric ceramic according to claim 3, wherein in step S103, the powder is placed in a corundum crucible, and the corundum crucible is pre-sintered at 700-1200 ℃ for 2-3 hours to obtain a dry powder.
9. The method for producing an anionically modified piezoelectric ceramic according to claim 3, wherein the polyvinyl alcohol aqueous solution in step S104 is 6wt% to 8wt%.
10. The method for preparing an anionically modified piezoelectric ceramic according to claim 3, wherein in step S104, the specific pressing process is as follows: pressing the powder into a sheet shape by using an isostatic press; the pressure of the isostatic press was 250MPa.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116986895A (en) * 2023-09-25 2023-11-03 西南民族大学 Anion modified high-voltage electrical property lead-free piezoelectric ceramic and preparation method thereof
CN116986896A (en) * 2023-09-25 2023-11-03 西南民族大学 Anion-substituted modified bismuth sodium titanate lead-free piezoelectric ceramic and preparation method thereof

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3654160A (en) * 1968-07-12 1972-04-04 Nippon Electric Co Piezoelectric ceramics
JP2000307162A (en) * 1999-04-20 2000-11-02 Olympus Optical Co Ltd Piezoelectric structure, composite piezoelectric vibrator and manufacture thereof
JP2001284668A (en) * 2000-03-29 2001-10-12 Kyocera Corp Laminated piezoelectric element, piezoelectric actuator, and injection equipment
JP2006199580A (en) * 2004-12-24 2006-08-03 Fuji Photo Film Co Ltd Method for producing ceramic body and method for manufacturing liquid discharge head
CN101560094A (en) * 2009-05-27 2009-10-21 武汉理工大学 High-temperature stable medium material for multilayer ceramic capacitors and preparation method thereof
US20100248932A1 (en) * 2009-03-31 2010-09-30 Yvonne Menke Method of producing transparent ceramics
KR20120134926A (en) * 2011-06-03 2012-12-12 한국세라믹기술원 Bismuth-based lead-free piezoelectric ceramics and manufacturing method therefor
US20150053885A1 (en) * 2012-03-30 2015-02-26 Canon Kabushiki Kaisha Piezoelectric ceramic, method for manufacturing piezoelectric ceramic, piezoelectric element, and electronic device
JP2022178888A (en) * 2021-05-21 2022-12-02 日本特殊陶業株式会社 Lead-free piezoelectric porcelain composition

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3654160A (en) * 1968-07-12 1972-04-04 Nippon Electric Co Piezoelectric ceramics
JP2000307162A (en) * 1999-04-20 2000-11-02 Olympus Optical Co Ltd Piezoelectric structure, composite piezoelectric vibrator and manufacture thereof
JP2001284668A (en) * 2000-03-29 2001-10-12 Kyocera Corp Laminated piezoelectric element, piezoelectric actuator, and injection equipment
JP2006199580A (en) * 2004-12-24 2006-08-03 Fuji Photo Film Co Ltd Method for producing ceramic body and method for manufacturing liquid discharge head
US20100248932A1 (en) * 2009-03-31 2010-09-30 Yvonne Menke Method of producing transparent ceramics
CN101560094A (en) * 2009-05-27 2009-10-21 武汉理工大学 High-temperature stable medium material for multilayer ceramic capacitors and preparation method thereof
KR20120134926A (en) * 2011-06-03 2012-12-12 한국세라믹기술원 Bismuth-based lead-free piezoelectric ceramics and manufacturing method therefor
US20150053885A1 (en) * 2012-03-30 2015-02-26 Canon Kabushiki Kaisha Piezoelectric ceramic, method for manufacturing piezoelectric ceramic, piezoelectric element, and electronic device
JP2022178888A (en) * 2021-05-21 2022-12-02 日本特殊陶業株式会社 Lead-free piezoelectric porcelain composition

Non-Patent Citations (7)

* Cited by examiner, † Cited by third party
Title
B. GUIFFARD 等: "Fluorine-oxygen substitution in MgO-doped lead zirconate titanate ceramics diffractometric and dielectric studies", JOURNAL OF MATERIALS SCIENCE, vol. 35, pages 101 - 104, XP001052381, DOI: 10.1023/A:1004796717123 *
BENOÎT GUIFFARD 等: "Dielectric and piezoelectric properties of Mg-Fco-doped PBSZT ceramics", ANNALES DE CHIMIE SCIENCE DES MATÉRIAUX, vol. 26, no. 1, pages 113 - 119 *
DAVID W. REAGOR 等: "Sol–Gel Processing and Characterizations of a Ba0.75Sr0.25Ti 0.95Zr0.05O3 Ceramic", JOURNAL OF THE AMERICAN CERAMIC SOCIETY, vol. 94, no. 11, pages 1 - 6 *
LIU SHANSHAN 等: "The Influence of Doped MgF2 on the Dielectric Properties of Barium Strontium Titanate Ceramics", MATERIALS SCIENCE FORUM, vol. 687, pages 427 - 432 *
V. V. KLIMOV 等: "Preparation of Hard Lead-Zirconate-Titanate-Based Piezoceramics", INORGANIC MATERIALS, vol. 40, no. 12, pages 1341 - 1344, XP019297267 *
WANG ZHONGMING 等: "Synthesis, structure, dielectric, piezoelectric, and energy storage performance of (Ba0.85Ca0.15)(Ti0.9Zr0.1)O3 ceramics prepared by different methods", J MATER SCI: MATER ELECTRON, vol. 27, pages 5047 - 5058 *
WU BO 等: "Evolution of multilevel structures and electrical properties in potassium-sodium niobate-based lead-free piezoceramics by anionic fluorine engineering", JOURNAL OF ALLOYS AND COMPOUNDS, vol. 918, pages 1 - 7 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116986895A (en) * 2023-09-25 2023-11-03 西南民族大学 Anion modified high-voltage electrical property lead-free piezoelectric ceramic and preparation method thereof
CN116986896A (en) * 2023-09-25 2023-11-03 西南民族大学 Anion-substituted modified bismuth sodium titanate lead-free piezoelectric ceramic and preparation method thereof
CN116986896B (en) * 2023-09-25 2023-12-01 西南民族大学 Anion-substituted modified bismuth sodium titanate lead-free piezoelectric ceramic and preparation method thereof
CN116986895B (en) * 2023-09-25 2023-12-01 西南民族大学 Anion modified high-voltage electrical property lead-free piezoelectric ceramic and preparation method thereof

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