CN116573863A - Anti-dazzle glass processing method and product thereof - Google Patents
Anti-dazzle glass processing method and product thereof Download PDFInfo
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- CN116573863A CN116573863A CN202310298643.8A CN202310298643A CN116573863A CN 116573863 A CN116573863 A CN 116573863A CN 202310298643 A CN202310298643 A CN 202310298643A CN 116573863 A CN116573863 A CN 116573863A
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- 239000011521 glass Substances 0.000 title claims abstract description 90
- 238000003672 processing method Methods 0.000 title claims abstract description 18
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 112
- 238000000034 method Methods 0.000 claims abstract description 80
- 230000008569 process Effects 0.000 claims abstract description 52
- 238000005530 etching Methods 0.000 claims abstract description 47
- 239000002253 acid Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 24
- -1 fluoride ions Chemical class 0.000 claims abstract description 19
- 238000012805 post-processing Methods 0.000 claims abstract description 15
- 238000001259 photo etching Methods 0.000 claims abstract description 14
- 230000007704 transition Effects 0.000 claims description 49
- 238000013461 design Methods 0.000 claims description 22
- 239000011248 coating agent Substances 0.000 claims description 20
- 238000000576 coating method Methods 0.000 claims description 20
- 238000001723 curing Methods 0.000 claims description 17
- 238000007639 printing Methods 0.000 claims description 12
- 238000005507 spraying Methods 0.000 claims description 10
- 238000011161 development Methods 0.000 claims description 9
- 238000003848 UV Light-Curing Methods 0.000 claims description 8
- 238000001312 dry etching Methods 0.000 claims description 8
- 239000011347 resin Substances 0.000 claims description 8
- 229920005989 resin Polymers 0.000 claims description 8
- 238000001029 thermal curing Methods 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 6
- 229910010272 inorganic material Inorganic materials 0.000 claims description 5
- 239000011147 inorganic material Substances 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 4
- 150000002736 metal compounds Chemical class 0.000 claims description 3
- 239000011368 organic material Substances 0.000 claims description 3
- 238000013007 heat curing Methods 0.000 claims description 2
- 238000002791 soaking Methods 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 abstract description 13
- 239000011800 void material Substances 0.000 abstract description 2
- 239000000047 product Substances 0.000 description 35
- 229910052731 fluorine Inorganic materials 0.000 description 11
- 239000011737 fluorine Substances 0.000 description 11
- 238000012545 processing Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 239000003513 alkali Substances 0.000 description 2
- 239000012752 auxiliary agent Substances 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 230000004313 glare Effects 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000010345 tape casting Methods 0.000 description 2
- 230000007306 turnover Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 208000002173 dizziness Diseases 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/28—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material
- C03C17/32—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material with synthetic or natural resins
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/007—Other surface treatment of glass not in the form of fibres or filaments by thermal treatment
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/11—Deposition methods from solutions or suspensions
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/11—Deposition methods from solutions or suspensions
- C03C2218/114—Deposition methods from solutions or suspensions by brushing, pouring or doctorblading
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/11—Deposition methods from solutions or suspensions
- C03C2218/116—Deposition methods from solutions or suspensions by spin-coating, centrifugation
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/11—Deposition methods from solutions or suspensions
- C03C2218/118—Deposition methods from solutions or suspensions by roller-coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
Landscapes
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
The invention discloses an anti-dazzle glass processing method, which comprises the following steps: step 1, presetting a pattern on a glass substrate by adopting a photoetching process; step 2, etching the pattern by adopting acid liquor containing fluoride ions; step 3, photoresist is removed; and 4, preparing glass with an anti-dazzle function, and carrying out post-processing. The processing method can realize high-precision AG void avoidance without adding extra working procedures, and forms the orderly etched anti-dazzle glass with controllable pattern structure, size and arrangement, high definition, low flash point and high yield.
Description
Technical Field
The invention relates to the technical field of anti-dazzle glass.
Background
When sunlight or indoor light irradiates the surface of the display screen, the light reflected into eyes of a person is strong due to specular reflection, so that the person can generate a slight dizziness phenomenon, which is called 'glare'. The anti-dazzle glass can well avoid the occurrence of the glare phenomenon and is widely applied to electronic products.
The processing technology of Anti-glare glass (AG glass for short) commonly used in industry is usually two kinds of frosting etching technology and spraying technology.
The frosting etching process is to process some groove microstructures on the surface of glass through the frosting liquid, and the anti-dazzle glass manufactured by the method has better anti-dazzle effect, but because of the process limitation of the frosting liquid, the etched grooves are irregularly arranged, have larger particle size difference and larger depth difference and are disordered in etching, so that when the anti-dazzle glass is matched with LCD or OLED for use, the actual display definition is poorer, and because of the condensation and scattering effects of the grooves, the brightness distribution of the actual display is uneven, and further a serious flash point phenomenon and definition phenomenon are generated.
The spraying process is to spray some chemical materials on the surface of the glass substrate to form a microstructure to achieve the anti-dazzle effect, but the microstructure formed by the spraying process has the same phenomenon of serious flash point and low definition caused by uncontrollable size, uncontrollable arrangement and large particle size difference as the frosting process.
Moreover, in some electronic products, special areas cannot be processed by concave or convex microstructures, and AG clearance is needed, such as a camera hole and an infrared induction hole. At present, the frosting and spraying processes can be achieved by adding a separate processing procedure (such as printing anti-dazzle ink) for the products needing AG clearance, so that the product cost is increased, more yield loss is caused, and the AG clearance precision of the anti-dazzle glass is lower due to the poor precision of the printing anti-dazzle ink.
Disclosure of Invention
The invention aims to solve the technical problem of realizing a processing method capable of realizing high-precision AG clearance and achieving the glass anti-dazzle function.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows: an antiglare glass processing method comprises the following steps:
step 1, presetting a pattern on a glass substrate by adopting a photoetching process;
step 2, etching the pattern by adopting acid liquor containing fluoride ions;
step 3, photoresist is removed;
and 4, preparing glass with an anti-dazzle function, and carrying out post-processing.
In the step 1, a transition layer is firstly manufactured on a glass substrate, then a graph is preset on the transition layer by adopting a photoetching process, and then the graph of the transition layer is manufactured;
in the step 2, the acid liquor adopts monoacid or mixed acid containing fluoride ions to treat the glass substrate in a soaking mode, a top spraying mode and a horizontal mode, and the depth of an etched pattern is 0.5um-50um;
in the step 3, the transition layer is removed after the photoresist is removed, and the transition layer is removed by adopting a dry etching or wet etching process.
The transition layer is made of metal, alloy, metal compound, organic or inorganic material, and is coated by PVD, CVD coating, spraying or printing, and the thickness of the transition layer is 5nm-30um.
In the step 3, the transition layer pattern is formed by forming a pattern structure extending to the glass substrate on the photoresist pattern, and the transition layer pattern is formed by dry etching or wet etching.
The preset graph adopting the photoetching process in the step 1 sequentially comprises the following steps: photoresist coating, exposure and development.
In the photoresist coating, the photoresist adopts resin photoresist, rubber photoresist, acid-resistant photoresist or photosensitive ink matched with MASK design, the photoresist is coated in a roll coating, blade coating, spin coating or printing mode, and the photoresist coating thickness is 0.4um-30um.
For the photoresist with the curing requirement, soft baking is carried out after the photoresist is coated, wherein the soft baking adopts thermal curing or UV curing, and the temperature is 50-150 ℃.
The exposure is performed by adopting a proximity or projection type exposure machine and matching with MASK, and the size of a pattern designed in the MASK is more than 1 um.
For the photoresist with the curing requirement, the photoresist pattern is cured after development, wherein the photoresist pattern is cured by heat curing or UV curing, and the temperature is 50-500 ℃.
The anti-dazzle glass product is manufactured by adopting the anti-dazzle glass processing method, wherein one surface of the anti-dazzle glass product is provided with glass patterns, and the glass patterns are of a concave structure, a convex structure or a convex-concave mixed structure which are uniformly and densely distributed.
The processing method can realize high-precision AG void avoidance without adding extra working procedures, and forms the orderly etched anti-dazzle glass with controllable pattern structure, size and arrangement, high definition, low flash point and high yield.
Drawings
The contents of each drawing in the specification of the present invention are briefly described as follows:
FIG. 1 is a flow chart of a method for processing antiglare glass according to example 1;
FIG. 2 is a flow chart of the antiglare glass processing method of example 2;
FIG. 3 is a schematic diagram of a MASK graphic design;
FIGS. 4-8 are schematic structural diagrams of different types of antiglare glass products;
the labels in the above figures are: 1. 1-1 parts of glass substrate, 2 parts of glass pattern, 2 parts of transition layer, 2-1 parts of transition layer pattern, 3 parts of photoresist, 3-1 parts of photoresist pattern.
Detailed Description
The following detailed description of the embodiments of the invention, such as the shape and construction of the components, the mutual positions and connection relationships between the components, the roles and working principles of the components, the manufacturing process and the operating and using method, etc., is provided to assist those skilled in the art in a more complete, accurate and thorough understanding of the inventive concept and technical solution of the present invention.
The anti-dazzle glass processing method comprises the following steps: designing a graph through MASK, controlling the size and arrangement of the graph, and realizing local clearance AG according to the requirement; the photoresist 3 can be a common photoresist 3 or an acid-resistant photoresist 3 by manufacturing a preset pattern through a photoetching process; etching the final product structure morphology by using acid liquor containing fluoride ions; in order to enhance the adhesion of the photoresist 3 and the tolerance time in acid liquor, the transition layer 2 can be added according to the requirement, the material of the transition layer 2 can be selected from organic, inorganic, metal and alloy, and the processing mode of the transition layer 2 can be a coating mode, a spraying mode, a printing mode and the like, and is not limited. The post-processing procedure can be selectively added, and the final appearance and index of the product can be adjusted.
Specifically, there are the following two embodiments;
example 1 the process route is as shown in fig. 1, comprising: glass substrate 1, a preset pattern of a photoetching process (comprising photoresist 3 coating, soft baking, exposure, development, curing of the photoresist pattern 3-1 and the like), an acid liquor etching pattern containing fluorine ions, photoresist 3 removal and post-processing.
The photolithography process preset pattern includes, but is not limited to, the steps of coating the photoresist 3, soft baking, exposing, developing, curing the photoresist pattern 3-1, and the like.
The photoresist 3 is coated, and the photoresist 3 can be common resin type or rubber type photoresist 3, or acid-resistant photoresist 3 or photosensitive ink can be used, and the characteristics (positive and negative) of the photoresist 3 are not limited, but are matched with MASK design. The manufacturing method of the photoresist 3 is not limited, and roll coating, knife coating, spin coating, printing, etc. can be used. The film thickness of the photoresist 3 is between 0.4um and 30um to ensure that the photoresist has higher resolution in photoetching.
Wherein the soft bake is to pre-cure the photoresist 3 to prevent the photoresist 3 from flowing during handling and turnover. The soft baking may be performed by thermal curing or UV curing, and the temperature or energy of the soft baking is selected according to the material characteristics, for example, a common resin photoresist is used, and the soft baking temperature may be pre-cured at 50-100 ℃, specifically determined according to the characteristics of the photoresist 3. It should be noted that the soft bake process may be omitted for the photoresist 3 that does not require pre-curing.
The exposure needs to use MASK, MASK selection is selected according to the type of the exposure machine, the pattern design on MASK is performed according to the requirements of the anti-dazzle product index, as shown in a MASK pattern design schematic diagram (only used for process description, the shape of the pattern can be designed according to the requirements), and the size, the size uniformity, the arrangement, the morphology (concave, convex, concave-convex mixture) and the like of the microstructure pattern of the anti-dazzle product can be controlled through MASK pattern design, so that the indexes of glossiness, haze, flash point, definition, anti-dazzle and the like of the required anti-dazzle product are achieved. The size of the MASK design pattern needs to be more than 1um to ensure that the MASK design pattern can be subjected to normal lithography. The correlation between the various indices of the antiglare glass and the MASK design is not within the scope of the disclosure of the present invention and is therefore not specifically set forth herein. The wavelength of the light source to be used for exposure is determined by the characteristics of the photoresist 3 and is not limited to 365nm. The exposure method is determined by the type of the exposure machine, and is not limited to the proximity type, the projection type, and the like.
The development time is regulated by combining exposure energy, graphic design size and chemical solution concentration.
The photoresist pattern 3-1 is cured to further cure the photoresist pattern 3-1, so as to ensure that the photoresist pattern has a sufficient protection effect in the subsequent etching process. The curing mode may be thermal curing or UV curing, and the curing temperature or energy is selected according to the material characteristics, such as using common resin photoresist, and the soft baking temperature may be 50-500 ℃ for curing, specifically determined according to the characteristics of the photoresist 3. It should be noted that, for the resist 3 cured in a disordered manner, the curing process of the resist pattern 3-1 may be omitted.
The main purpose of the "acid etching pattern containing fluorine ions" is to etch the glass substrate 1 in order to use the barrier of the photoresist pattern 3-1. The region having the photoresist pattern 3-1, the glass is protected, and the region having no photoresist pattern 3-1, the glass is etched, thereby etching the glass substrate 1 to a desired pattern structure. The acid solution may be a monoacid or mixed acid containing fluorine ions, or may be an organic compound or the like as an auxiliary agent. Etching means include, but are not limited to, immersion, top-spray, horizontal, and the like. The etching amount is determined according to the characteristic requirement of the product, and for the anti-dazzle glass, the etching amount can be controlled to be between 0.5um and 50um, and the etching amount is adjusted according to various indexes, flash point effect, definition and the like of the required anti-dazzle glass. It should be noted that the etching process is usually accompanied by a cleaning process, and it is obvious that the "etching pattern with fluorine ion" according to the present invention includes, but is not limited to, etching itself, and the cleaning process, plasma process, and the like may be added as needed.
The main purpose of the photoresist 3 removal is to remove the residual photoresist 3 on the surface of the etched product of the glass substrate 1, wherein the removal mode can be selected from acid, alkali or other organic solvents according to the characteristics of the photoresist 3, and also can be removed in a physical mode. It should be noted that, for example, after etching the glass substrate 1, the surface has no residual photoresist 3, and this process may be added or omitted as needed, which is an unnecessary process.
The main purpose of the post-processing is to further adjust the shape and size of the graph according to the product requirement in a process mode. The post-processing mode can adopt acid liquor etching containing fluoride ions, and can also adopt other physical or chemical modes. Taking the etching method using acid solution containing fluorine ions as an example, because of the nature of the relativity of etching, the pattern structure morphology of the glass surface will change due to the existence of multidirectional etching characteristics when the photoresist 3 is post-processed after being removed. The degree of variation is determined by product specifications and requirements. Obviously, the post-processing procedure is to further adjust the morphology, the size and the structure of the product, so that whether the product is used or not can be determined according to the actual requirement of the product.
Example 2 the process route is as shown in fig. 2, comprising: glass substrate 1, transition layer 2 manufacture, photoetching process preset patterns (comprising photoresist 3 coating, soft baking, exposure, development, photoresist pattern 3-1 curing and the like), transition layer pattern 2-1 manufacture, fluorine ion-containing acid liquor etching pattern, photoresist 3 removal, transition layer 2 removal and post-processing.
Wherein the material of the transition layer 2 includes, but is not limited to, metals, alloys, metal compounds, other organic or inorganic materials. The processing mode of the transition layer 2 can be performed by adopting PVD or CVD coating, spraying, printing and the like, the thickness of the transition layer 2 is required to be between 5nm and 30um so as to ensure that the transition layer 2 has enough compactness, and the photoresist 3 is attached to the transition layer 2 enough to prevent the photoresist 3 from falling off after exposure and development.
Wherein the photolithography process preset pattern includes, but is not limited to, the steps of coating the photoresist 3, soft baking, exposing, developing, curing the photoresist pattern 3-1, and the like.
The photoresist 3 is coated, and the photoresist 3 can be common resin, rubber photoresist 3, acid-resistant photoresist 3 or photosensitive ink, and the characteristics (positive and negative) of the photoresist 3 are not limited, but are matched with MASK design. The manufacturing method of the photoresist 3 is not limited, and roll coating, knife coating, spin coating, printing, etc. can be used. The film thickness of the photoresist 3 is between 0.4um and 30um to ensure that the photoresist has higher resolution in photoetching.
Wherein the soft bake is to pre-cure the photoresist 3 to prevent the photoresist 3 from flowing during handling and turnover. The soft baking may be thermal curing or UV curing, and the temperature or energy of the soft baking is selected according to the material characteristics, for example, a common resin photoresist is used, and the soft baking temperature may be pre-cured at 50-150 ℃, specifically determined according to the characteristics of the photoresist 3. It should be noted that, for the unordered pre-cured photoresist 3, the soft bake process may be omitted.
Wherein MASK is used for exposure. The MASK pattern is selected according to the type of the exposure machine, the pattern design on the MASK is performed according to the requirements of the anti-dazzle product index, as shown in a MASK pattern design schematic diagram (only used for process description, the shape of the pattern can be designed according to the requirements), the size uniformity, the arrangement, the morphology (concave, convex and concave-convex mixture) and the like of the final pattern of the anti-dazzle product can be controlled through the pattern design, and thus the indexes such as glossiness, haze, flash point, definition, anti-dazzle and the like of the required anti-dazzle product are achieved. The photoresist 3 can be reserved at the required position through MASK pattern design for the product needing AG clearance, so that the corresponding region of the glass substrate 1 can not be etched during the subsequent etching process. The size of the MASK design pattern needs to be above 1um to ensure normal lithography. In principle the more uniform the dimensions and spacing of the graphics, the lower the flash point of the finished antiglare glass product, but the various indices of AG and the relevant rules of MASK design are not within the scope of the disclosure of the present invention and are therefore not elaborated here. The wavelength of the light source to be used for exposure is determined by the characteristics of the photoresist 3 and is not limited to 365nm. The exposure method is determined by the type of the exposure machine, and is not limited to the proximity type, the projection type, and the like.
Wherein the development time is adjusted by combining the exposure energy and the pattern size design according to the characteristic of the selected photoresist 3.
The photoresist pattern 3-1 is cured to further cure the photoresist pattern 3-1, so as to ensure that the photoresist pattern has a sufficient protection effect in the subsequent etching process. The curing mode may be thermal curing or UV curing, and the curing temperature or energy is selected according to the material characteristics, such as using common resin photoresist, and the soft baking temperature may be 50-500 ℃ for curing, specifically determined according to the characteristics of the photoresist 3. It should be noted that, for the resist 3 cured in a disordered manner, the curing process of the resist pattern 3-1 may be omitted.
The transition layer pattern 2-1 is formed by etching the transition layer 2 to ensure that the region with the transition layer 2 protects the glass substrate 1 during the subsequent etching process, and the region without the transition layer 2 is etched to the glass substrate 1. The fabrication method of the transition layer 2 is determined according to the material of the transition layer 2, and includes, but is not limited to, dry etching, wet etching, and the like. If the transition layer 2 is an inorganic material, dry etching can be used.
The main purpose of the acid etching pattern containing fluorine ions is to etch the glass substrate 1 in order to block by using the photoresist pattern 3-1 or the transition layer pattern 2-1. The region having the photoresist 3 or the transition layer pattern 2-1, the glass is protected, the region having no photoresist 3 or transition layer pattern 2-1, and the glass is etched, thereby etching the glass substrate 1 to a desired pattern structure. The acid solution may be a monoacid or mixed acid containing fluorine ions, or may be an organic compound or the like as an auxiliary agent. Etching means include, but are not limited to, immersion, top-spray, horizontal, and the like. The etching amount is determined according to the characteristic requirement of the product, and for the anti-dazzle glass, the etching amount can be controlled to be between 0.5um and 50um, and the etching amount is adjusted according to various indexes, flash point effect, definition and the like of the required anti-dazzle glass. It should be noted that the etching process is usually accompanied by a cleaning process, and it is obvious that the "etching pattern with fluorine ion" according to the present invention includes, but is not limited to, etching itself, and the cleaning process, plasma process, and the like may be added as needed.
The photoresist 3 is removed mainly for removing the residual photoresist 3 on the surface of the etched product of the glass substrate 1, and the removal mode can be selected from acid, alkali or other organic solvents according to the characteristics of the photoresist 3, and also can be removed by using a physical mode. It should be noted that, for example, after the glass substrate 1 is etched, the surface has no residual photoresist 3, the process may be increased or omitted according to the requirement, and if the material of the transition layer 2 itself has sufficient resistance to the acid solution containing fluorine ions, the process of "photoresist 3 removal" may be completed after the process of "fabricating the transition layer pattern 2-1" and before the process of "etching the pattern with the acid solution containing fluorine ions".
Wherein the transition layer 2 is removed in order to remove the transition layer 2 from the glass surface. The manner of removing the transition layer 2 is determined by the material of the transition layer 2, including but not limited to dry etching, wet etching, and the like. If the transition layer 2 is an inorganic material, dry etching can be used.
The main purpose of post-processing is to further adjust the shape and size of the graph according to the product requirement in a process mode. The post-processing mode can adopt acid liquor etching containing fluoride ions, and can also adopt other physical or chemical modes. Taking the etching method using acid solution containing fluorine ions as an example, because of the nature of the relativity of the etching, when the photoresist 3 is removed and post-processed, the pattern structure morphology of the glass surface is changed due to the existence of multi-directional etching characteristics (fig. 2 is a schematic illustration of the effect produced by the post-processing process). The degree of variation is determined by product specifications and requirements. Obviously, the post-processing procedure is to further adjust the morphology, the size and the structure of the product, so that whether the product is used or not can be determined according to the actual requirement of the product.
The problems of uncontrollable pattern size, uncontrollable arrangement, large particle size difference, serious flash point, low definition and low yield of the traditional processing method are solved by using the MASK design pattern, the photoetching process preset pattern, the acid etching pattern containing fluorine ions and the post-processing method.
The method can realize the selective AG clearance function without adding extra working procedures, is simpler than the traditional processing method, and has higher AG clearance precision than the traditional processing method (the photoetching precision is in um level and the traditional printing anti-dazzle printing ink clearance mode precision is in mm level).
For products requiring AG clearance or requiring local anti-dazzle processing, the processing method disclosed by the invention can be realized only by designing MASK patterns and reserving the photoresist 3 at the corresponding position on the developed glass according to the characteristics of an exposure machine and the photoresist 3.
The shape, size, arrangement and appearance (concave and convex) of the pattern of the anti-dazzle glass product produced by the processing method are controllable, so that the indexes of glossiness, haze, definition, flash point and the like of the anti-dazzle glass product are controlled, and the method is different from disordered etching of the traditional frosting etching process.
The pattern shape which can be processed on the surface of the glass can be convex or concave, even a plurality of shapes are combined and matched, and the glass has better effect on reducing the light interference and diffraction phenomena of the traditional anti-dazzle glass. Compared with the traditional one-time processing mode, the method can adjust the appearance of the surface pattern of the glass after one-time processing to a certain extent by adopting a mode of multiple times of acid etching, thereby achieving the effect of adjusting the product index, and the same design can manufacture various index products.
I.e. the structure features processed by the processing method can be either convex (as shown in fig. 4 for example) or concave (as shown in fig. 5 and fig. 6 for example) or even mixed with concave-convex features (as shown in fig. 7 and fig. 8 for example).
It is apparent that the implementation of the present invention is not limited by the photoresist 3, the transition layer 2 and the above-described manner, and that various insubstantial modifications by using the MASK design, the preset pattern of the photoresist 3, the concept and the technical scheme of etching or "post-processing" the acid solution containing fluorine ions are also within the scope of the present invention.
The processing method disclosed by the invention is not only used for processing anti-dazzle glass, but also used for processing glass surface microstructures for other purposes, such as a glass light guide plate, a glass optical device and the like, and the processing of various products by adopting the method conception and the technical scheme is within the protection scope of the invention.
Claims (10)
1. An antiglare glass processing method is characterized by comprising the following steps:
step 1, presetting a pattern on a glass substrate by adopting a photoetching process;
step 2, etching the pattern by adopting acid liquor containing fluoride ions;
step 3, photoresist is removed;
and 4, preparing glass with an anti-dazzle function, and carrying out post-processing.
2. The antiglare glass working method according to claim 1, wherein: in the step 1, a transition layer is firstly manufactured on a glass substrate, then a graph is preset on the transition layer by adopting a photoetching process, and then the graph of the transition layer is manufactured;
in the step 2, the acid liquor adopts monoacid or mixed acid containing fluoride ions to treat the glass substrate in a soaking mode, a top spraying mode and a horizontal mode, and the depth of an etched pattern is 0.5um-50um;
in the step 3, the transition layer is removed after the photoresist is removed, and the transition layer is removed by adopting a dry etching or wet etching process.
3. The antiglare glass working method according to claim 2, wherein: the transition layer is made of metal, alloy, metal compound, organic or inorganic material, and is coated by PVD, CVD coating, spraying or printing, and the thickness of the transition layer is 5nm-30um.
4. The antiglare glass working method according to claim 3, wherein: in the step 3, the transition layer pattern is formed by forming a pattern structure extending to the glass substrate on the photoresist pattern, and the transition layer pattern is formed by dry etching or wet etching.
5. The antiglare glass working method according to any one of claims 1 to 4, wherein: the preset graph adopting the photoetching process in the step 1 sequentially comprises the following steps: photoresist coating, exposure and development.
6. The antiglare glass working method according to claim 5, wherein: in the photoresist coating, the photoresist adopts resin photoresist, rubber photoresist, acid-resistant photoresist or photosensitive ink matched with MASK design, the photoresist is coated in a roll coating, blade coating, spin coating or printing mode, and the photoresist coating thickness is 0.4um-30um.
7. The antiglare glass working method according to claim 6, wherein: for the photoresist with the curing requirement, soft baking is carried out after the photoresist is coated, wherein the soft baking adopts thermal curing or UV curing, and the temperature is 50-150 ℃.
8. The antiglare glass working method according to claim 7, wherein: the exposure is performed by adopting a proximity or projection type exposure machine and matching with MASK, and the size of a pattern designed in the MASK is more than 1 um.
9. The antiglare glass working method according to claim 8, wherein: for the photoresist with the curing requirement, the photoresist pattern is cured after development, wherein the photoresist pattern is cured by heat curing or UV curing, and the temperature is 50-500 ℃.
10. An antiglare glass product characterized in that: the antiglare glass according to any one of claims 1 to 9, wherein one surface of the antiglare glass has a glass pattern, and the glass pattern has a uniformly densely arranged concave structure, a convex structure, or a convex-concave mixed structure.
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| CN202310298643.8A CN116573863A (en) | 2023-03-24 | 2023-03-24 | Anti-dazzle glass processing method and product thereof |
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| CN202310298643.8A CN116573863A (en) | 2023-03-24 | 2023-03-24 | Anti-dazzle glass processing method and product thereof |
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| CN116573863A true CN116573863A (en) | 2023-08-11 |
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| CN202310298643.8A Pending CN116573863A (en) | 2023-03-24 | 2023-03-24 | Anti-dazzle glass processing method and product thereof |
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