CN113900354B - Method for manufacturing nano-imprinting adhesive layer and optical element - Google Patents
Method for manufacturing nano-imprinting adhesive layer and optical element Download PDFInfo
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- CN113900354B CN113900354B CN202111199916.0A CN202111199916A CN113900354B CN 113900354 B CN113900354 B CN 113900354B CN 202111199916 A CN202111199916 A CN 202111199916A CN 113900354 B CN113900354 B CN 113900354B
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- glue
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- adhesive layer
- mask plate
- thickness
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- 239000012790 adhesive layer Substances 0.000 title claims abstract description 60
- 238000000034 method Methods 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 230000003287 optical effect Effects 0.000 title claims abstract description 25
- 239000003292 glue Substances 0.000 claims abstract description 104
- 239000010410 layer Substances 0.000 claims abstract description 103
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 238000005530 etching Methods 0.000 claims abstract description 27
- 239000011248 coating agent Substances 0.000 claims abstract description 19
- 238000000576 coating method Methods 0.000 claims abstract description 19
- 238000001312 dry etching Methods 0.000 claims abstract description 14
- 239000010408 film Substances 0.000 claims description 19
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- 238000004528 spin coating Methods 0.000 claims description 6
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims 1
- 238000004049 embossing Methods 0.000 abstract description 4
- 239000011521 glass Substances 0.000 description 8
- 230000009286 beneficial effect Effects 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
Abstract
The invention provides a method for manufacturing a nano-imprinting adhesive layer and an optical element, wherein the method for manufacturing the nano-imprinting adhesive layer comprises the following steps: step S10: coating glue on a substrate and forming a glue layer with uniform thickness; step S20: placing the mask plate above the adhesive layer to form an intermediate piece; step S30: placing the intermediate piece into dry etching equipment for etching to form an etching piece with uneven thickness; step S40: if the number N of the areas to be etched is greater than 1, repeating the steps S20 to S30 for N-1 times after the mask plate is moved to the preset position, and executing the step S50; if the number N of the areas to be etched is equal to 1, step S50 is executed; step S50: and taking out the etching piece, separating the mask plate from the adhesive layer, and imprinting the adhesive layer. The invention solves the problem that residual glue with inconsistent thickness is easy to generate in the embossing process in the prior art.
Description
Technical Field
The invention relates to the technical field of imprinting equipment, in particular to a method for manufacturing a nano imprinting adhesive layer and an optical element.
Background
Among the current AR solutions in all kinds, the most mass-production possible solution is the optical waveguide solution. The nano-imprinting technology is needed in the mass production of the optical waveguide, and the current conventional nano-imprinting technology flow is to imprint a daughter board by a master plate, and then produce the product on a large scale. In the process of master embossing the daughter board, a hard-to-soft embossing process is used. If the structures on the master are very different, the thickness of the residual glue on the daughter board can be greatly deviated.
In the process of stamping the product, the glue needs to be uniformly coated on the glass, and a spin coating mode is generally selected. In this way, a glue layer with uniform thickness distribution can be obtained, and the general deviation can be controlled within +/-2%. After imprinting, residual glue with inconsistent thickness can be formed once due to consistent glue thickness, and the thickness deviation of the residual glue is more than 100 nm. This thickness deviation has a great influence on the high quality propagation of the internal optical path, and may also destroy the total reflection conditions within the waveguide, resulting in a part of the light being coupled out of the waveguide, causing optical path leakage and energy loss.
That is, the conventional embossing process has a problem in that the residual glue with inconsistent thickness is easily generated.
Disclosure of Invention
The invention mainly aims to provide a manufacturing method of a nano-imprinting adhesive layer and an optical element, so as to solve the problem that residual adhesive with inconsistent thickness is easy to generate in an imprinting process in the prior art.
In order to achieve the above object, according to one aspect of the present invention, there is provided a method for manufacturing a nanoimprint resist layer, comprising: step S10: coating glue on a substrate and forming a glue layer with uniform thickness; step S20: placing the mask plate above the adhesive layer to form an intermediate piece; step S30: placing the intermediate piece into dry etching equipment for etching to form an etching piece with uneven thickness; step S40: if the number N of the areas to be etched is greater than 1, repeating the steps S20 to S30 for N-1 times after the mask plate is moved to the preset position, and executing the step S50; if the number N of the areas to be etched is equal to 1, step S50 is executed; step S50: and taking out the etching piece, separating the mask plate from the adhesive layer, and imprinting the adhesive layer.
Further, step S10 includes: in the process of coating glue on a substrate and forming a glue layer with uniform thickness, the glue is coated by adopting a spin coating process.
Further, step S10 includes: in the process of coating glue on a substrate and forming a glue layer with uniform thickness, a preset volume of glue is coated on the substrate so that the thickness of the formed glue layer is in the range of 500nm to 1500 nm.
Further, step S10 further includes: after the glue layer is formed, the glue layer is prebaked.
Further, step S11 is further included between step S10 and step S20: and plating a film layer on the surface of the adhesive layer, which is far away from the substrate.
Further, step S11 includes: in the process that the glue layer is far away from the surface of the substrate and is coated with a film layer, the substrate and the glue layer are placed into a coating device; by TiN or TiO 2 Coating a film on the surface of the adhesive layer to form a TiN film layer or TiO film layer 2 A thin film layer.
Further, in step S20, further includes: the mask plate is placed above the adhesive layer, and the distance between the mask plate and the adhesive layer is controlled to be in the range of 0.1mm to 1 mm.
Further, step S30 includes: and after the intermediate piece is placed in dry etching equipment, etching the adhesive layer exposed at the hollow structure of the mask plate, so that the thickness of the adhesive layer exposed at the hollow structure is thinned.
Further, in step S40, etching times for different areas to be etched are different, so that the glue layer has a plurality of areas with different thicknesses.
According to another aspect of the present invention, an optical element is provided, and the optical element is manufactured by using the manufacturing method of the nano imprinting adhesive layer.
By applying the technical scheme of the invention, the manufacturing method of the nano-imprinting adhesive layer comprises the following steps: step S10: coating glue on a substrate and forming a glue layer with uniform thickness; step S20: placing the mask plate above the adhesive layer to form an intermediate piece; step S30: placing the intermediate piece into dry etching equipment for etching to form an etching piece with uneven thickness; step S40: if the number N of the areas to be etched is greater than 1, repeating the steps S20 to S30 for N-1 times after the mask plate is moved to the preset position, and executing the step S50; if the number N of the areas to be etched is equal to 1, step S50 is executed; step S50: and taking out the etching piece, separating the mask plate from the adhesive layer, and imprinting the adhesive layer.
Glue is coated on the substrate to form a glue layer with uniform thickness, so that the follow-up process is convenient to carry out, when the glue layer is formed, the thickness of the glue layer is the maximum thickness of each position of the glue layer, and the rest of areas with thinner thickness are thinned through follow-up etching. The mask plate is placed on the adhesive layer to shield part of the area of the adhesive layer, and the area to be etched is exposed in the dry etching equipment, so that the dry etching equipment etches the area to be etched, and the area to be etched is thinned to reach the preset thickness. And there may be a plurality of different areas to be etched on the same adhesive layer, and the thicknesses of the adhesive layers at the different areas to be etched may be the same or different, where the dry etching apparatus etches the different areas to be etched for different time under the condition that the thicknesses of the adhesive layers at the different areas to be etched are different, so that the thicknesses of the formed final adhesive layers are distributed according to the target, so that the imprinting of the adhesive layers is facilitated, and optical elements with different areas and different thicknesses are obtained.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention. In the drawings:
FIG. 1 is a flow chart of a method of fabricating a nanoimprint resist layer according to an alternative embodiment of the present invention; and
FIG. 2 shows a schematic structural view of an optical element according to an alternative embodiment of the present invention;
FIG. 3 shows a schematic structural view of an adhesive layer according to an alternative embodiment of the present invention;
fig. 4 shows a schematic structural view of a mask plate according to an alternative embodiment of the present invention.
Wherein the above figures include the following reference numerals:
10. a substrate; 20. a glue layer; 30. the area to be etched; 40. a mask plate; 41. a hollow structure.
Detailed Description
It should be noted that, in the case of no conflict, the embodiments and features in the embodiments may be combined with each other. The invention will be described in detail below with reference to the drawings in connection with embodiments.
It is noted that all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs unless otherwise indicated.
In the present invention, unless otherwise indicated, terms of orientation such as "upper, lower, top, bottom" are used generally with respect to the orientation shown in the drawings or with respect to the component itself in the vertical, upright or gravitational direction; also, for ease of understanding and description, "inner and outer" refers to inner and outer relative to the profile of each component itself, but the above-mentioned orientation terms are not intended to limit the present invention.
In order to solve the problem that residual glue with inconsistent thickness is easy to generate in an imprinting process in the prior art, the invention provides a manufacturing method of a nano imprinting glue layer and an optical element.
As shown in fig. 1 to 4, the method for manufacturing the nano-imprinting adhesive layer includes: step S10: coating glue on the substrate 10 and forming a glue layer 20 with uniform thickness; step S20: placing the mask plate 40 over the glue layer 20 to form an intermediate piece; step S30: placing the intermediate piece into dry etching equipment for etching to form an etching piece with uneven thickness; step S40: if the number N of the areas 30 to be etched is greater than 1, repeating the steps S20 to S30N-1 times after moving the mask plate 40 to the preset position, and then executing the step S50; if the number N of the areas 30 to be etched is equal to 1, step S50 is performed; step S50: the etched member is removed and the mask plate 40 is separated from the glue layer 20 and the glue layer 20 is imprinted.
Glue is coated on the substrate 10 to form a glue layer 20 with uniform thickness, so that the subsequent process is convenient, and when the glue layer 20 is formed, the thickness of the glue layer 20 is the maximum thickness of each position of the glue layer 20, and the rest of the thinner areas are thinned by subsequent etching. The mask plate 40 is placed on the adhesive layer 20 to block a part of the area of the adhesive layer 20, and the area 30 to be etched is exposed in the dry etching device, so that the dry etching device etches the area 30 to be etched, and the area 30 to be etched is thinned to reach a preset thickness. And there may be multiple different areas 30 to be etched on the same adhesive layer 20, and the thicknesses of the adhesive layers 20 at the multiple different areas 30 to be etched may be the same or different, where the dry etching apparatus etches the different areas 30 to be etched for different time under the condition that the thicknesses of the adhesive layers 20 at the multiple different areas 30 to be etched are different, so that the thicknesses of the final adhesive layers formed are distributed according to the target, thus facilitating the imprinting of the adhesive layers 20 to obtain optical elements with different areas having different thicknesses.
It should be noted that, by forming different areas of the glue layer 20 into different thicknesses, the structural difference on the master is reduced, and the structural difference is transferred to the glue layer 20, so that when the master imprints the glue layer 20, residual glue with inconsistent thickness is not easy to generate, the influence of thickness deviation on an internal light path is reduced, the total reflection condition in the optical waveguide is ensured, the light path leakage and the energy loss are reduced, and the working stability of the optical element is ensured.
Specifically, step S10 includes: in the process of coating the glue on the substrate 10 and forming the glue layer 20 having a uniform thickness, the glue is coated using a spin coating process. The glue layer 20 with uniform thickness can be obtained by adopting a spin coating mode, and the deviation of the glue layer 20 can be controlled within +/-2%, so that the uniformity of the thickness of the glue layer 20 is ensured.
Specifically, step S10 includes: in the process of coating the glue on the substrate 10 and forming the glue layer 20 having a uniform thickness, a preset volume of glue is coated on the substrate 10 so that the thickness of the formed glue layer 20 is in the range of 500nm to 1500 nm. If the thickness of the glue layer 20 is less than 500nm, the thickness of the glue layer 20 is smaller, and the substrate 10 is easily exposed after etching. If the thickness of the adhesive layer 20 is greater than 1500nm, the adhesive layer 20 is thicker, and is not easy to dry, which is not beneficial to subsequent imprinting. The glue layer 20 is limited to the range of 500nm to 1500nm, which is beneficial to coating and drying the glue layer 20 and is not easy to etch on the substrate 10.
Specifically, step S10 further includes: after the glue layer 20 is formed, the glue layer 20 is pre-baked. The glue layer 20 is pre-baked after the glue layer 20 is formed, so that the form of the glue layer 20 is relatively fixed, and the fluidity of the glue layer 20 is reduced, so that subsequent etching and imprinting can be performed.
Specifically, step S11 is further included between step S10 and step S20: a thin film layer is plated on the surface of the glue layer 20 remote from the substrate 10. The provision of the film layer can provide protection to the glue layer 20 or reduce reflection from the glue layer 20 to allow the optical element to perform different functions.
Specifically, step S11 includes: during the process of coating the surface of the adhesive layer 20 far away from the substrate 10 with a thin film layer, the substrate 10 and the adhesive layer 20 are put into a coating device; by TiN or TiO 2 Coating a film on the surface of the adhesive layer 20 to form a TiN film layer or TiO film 2 A thin film layer.
It should be noted thatTiN film layer and TiO 2 The refractive index of the film layer is different, the etching selection ratio is also different in processing, and the light transmittance of the film layer is also different, but the view angle of the optical element can be improved, and the light can be totally reflected at a larger angle due to the high refractive index. For TiN film layer and TiO 2 The film layer may be selected according to specific application requirements.
Specifically, in step S20, further includes: the mask 40 is placed over the glue layer 20 and the distance between the mask 40 and the glue layer 20 is controlled to be in the range of 0.1mm to 1 mm. If the distance between the mask plate 40 and the adhesive layer 20 is smaller than 0.1mm, the distance between the mask plate 40 and the adhesive layer 20 is too small, and the mask plate 40 is easy to press against the adhesive layer 20 to deform the adhesive layer 20. If the distance between the mask plate 40 and the glue layer 20 is greater than 1mm, other areas are easily damaged during etching the glue layer 20, which is not beneficial to control of the etched areas. The distance between the mask plate 40 and the adhesive layer 20 is controlled within the range of 0.1mm to 1mm, so that the mask plate 40 can not be pressed to the adhesive layer 20, and the etching area can be controlled conveniently, and the etching to an unnecessary area is reduced.
Specifically, step S30 includes: after the intermediate piece is put into the dry etching equipment, the glue layer 20 exposed at the hollow structure 41 of the mask plate 40 is etched, so that the thickness of the glue layer 20 exposed at the hollow structure 41 is thinned. The shape of the hollow structure 41 may be designed as desired to thin specific areas of the glue line 20.
Specifically, in step S40, the etching time is different for different areas 30 to be etched, so that the glue layer 20 has a plurality of areas with different thicknesses. Of course, the etching time of the area 30 to be etched is set according to the required thickness distribution of the glue layer 20, so that the thickness of the glue layer 20 is distributed according to the preset thickness.
As shown in fig. 2, the optical element is manufactured by the manufacturing method of the nano-imprinting adhesive layer. The optical element manufactured by the manufacturing method of the nano imprinting adhesive layer has a plurality of areas with different thicknesses, meanwhile, residual adhesive is less, and the working stability of the optical element can be ensured.
Taking a specific example as an example, an optical element is obtained with the following parameters: the thickness of the first area is 1000nm, the thickness of the second area is 900nm, the thickness of the third area is 800nm, the thickness of the rest positions is 1200nm, wherein the sizes of the first area, the second area and the third area are 20mm x 20mm, and the detailed view is shown in fig. 3.
On a piece of 4 inch SiO 2 Coating glue on glass by a spin coating process to form a layer of glue layer 20 with the thickness of 1200nm, and controlling the fluctuation of the surface of the glue to be +/-2%;
setting corresponding temperature and time, and performing pre-baking;
machining a mask plate 40 shown in fig. 4 on a metal plate by a machining method, wherein the overall size is 80mm by 80mm, and the hollow structure 41 is 20mm by 20mm;
placing the glass sheet into an IBE equipment cavity, placing the mask plate 40 above the glass sheet, and controlling the distance between the mask plate and the glass sheet to be 0.1-1 mm;
carrying out glue layer thinning on the first area according to debugging process parameters, controlling process time, and detecting thickness thinning of the first area to be near an expected value by using an ellipsometer;
moving the mask plate, moving for 25mm in the X direction, controlling the Y direction to be unchanged, and keeping the distance between the mask plate 40 and glass between 0.1 and 1 mm;
carrying out glue layer thinning on the second area according to the debugging process parameters, controlling the process time, and detecting the thickness thinning of the second area to be near an expected value by using an ellipsometer;
moving the mask plate to 25mm in the X direction, and controlling the Y direction to 30mm, wherein the distance between the mask plate and the glass is 0.1-1 mm;
carrying out glue layer thinning on the third area according to the debugging process parameters, controlling the process time, and detecting the thickness thinning of the third area to be near an expected value by using an ellipsometer;
and taking out the glass sheet, and stamping on nano stamping equipment.
It will be apparent that the embodiments described above are merely some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments in accordance with the present application. As used herein, the singular is also intended to include the plural unless the context clearly indicates otherwise, and furthermore, it is to be understood that the terms "comprises" and/or "comprising" when used in this specification are taken to specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof.
It should be noted that the terms "first," "second," and the like in the description and claims of the present application and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that embodiments of the present application described herein may be implemented in sequences other than those illustrated or described herein.
The above description is only of the preferred embodiments of the present invention and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (9)
1. The manufacturing method of the nano-imprinting adhesive layer is characterized by comprising the following steps of:
step S10: coating glue on a substrate (10) and forming a glue layer (20) with uniform thickness;
step S20: placing a mask plate (40) above the adhesive layer (20) to form an intermediate piece;
step S30: placing the intermediate piece into dry etching equipment for etching to form an etching piece with uneven thickness;
step S40: if the number N of the areas (30) to be etched is greater than 1, repeating the steps S20 to S30N-1 times after the mask plate (40) is moved to the preset position, and executing the step S50; if the number N of the areas (30) to be etched is equal to 1, executing step S50;
the step S50: taking out the etched part, separating the mask plate (40) from the adhesive layer (20), and imprinting the adhesive layer (20);
in the step S40, etching times for different regions (30) to be etched are different, so that the glue layer (20) has a plurality of regions with different thicknesses.
2. The method for manufacturing a nanoimprint resist layer according to claim 1, wherein the step S10 includes:
in the process of coating glue on the substrate (10) and forming a glue layer (20) with uniform thickness, the glue is coated by adopting a spin coating process.
3. The method for manufacturing a nanoimprint resist layer according to claim 1, wherein the step S10 includes:
in the process of coating glue on the substrate (10) and forming the glue layer (20) with uniform thickness, coating glue with a preset volume on the substrate (10) so as to enable the thickness of the formed glue layer (20) to be in the range of 500nm to 1500 nm.
4. The method for manufacturing a nanoimprint resist layer according to claim 1, wherein the step S10 further comprises: after the glue layer (20) is formed, the glue layer (20) is pre-baked.
5. The method of fabricating a nanoimprint resist layer according to claim 1, further comprising step S11 between the step S10 and the step S20: and plating a film layer on the surface of the adhesive layer (20) far away from the substrate (10).
6. The method of fabricating a nanoimprint resist layer according to claim 5, wherein the step S11 includes:
in the process that the glue layer (20) is far away from the surface of the substrate (10) to plate a film layer, the substrate (10) and the glue layer (20) are placed into a film plating device;
by TiN or TiO 2 The material is coated on the surface of the adhesive layer (20) to form a TiN film layer or TiO film layer 2 A thin film layer.
7. The method of fabricating a nanoimprint resist layer according to claim 1, further comprising, in the step S20:
the mask plate (40) is placed above the glue layer (20) and the distance between the mask plate (40) and the glue layer (20) is controlled to be in the range of 0.1mm to 1 mm.
8. The method of fabricating a nanoimprint resist layer according to claim 1, wherein the step S30 includes: and after the middleware is placed into the dry etching equipment, etching the adhesive layer (20) exposed at the hollow structure (41) of the mask plate (40) so that the thickness of the adhesive layer (20) exposed at the hollow structure (41) is thinned.
9. An optical element, characterized in that the optical element is manufactured by the manufacturing method of the nano-imprinting glue layer according to any one of claims 1 to 8.
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EP1606834B1 (en) * | 2003-03-27 | 2013-06-05 | Korea Institute Of Machinery & Materials | Uv nanoimprint lithography process using elementwise embossed stamp |
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CN101702077A (en) * | 2009-11-13 | 2010-05-05 | 哈尔滨工业大学 | Method for improving filling and reducing defective gum by applying photoresist shaping in concave die hot coining |
CN109683445A (en) * | 2019-01-10 | 2019-04-26 | 京东方科技集团股份有限公司 | A kind of joining method of nano-pattern, nano impression plate, grating and production method |
CN109541885A (en) * | 2019-01-14 | 2019-03-29 | 京东方科技集团股份有限公司 | Joining method, nano impression plate, grating and the production method of nano-pattern |
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Effective date of registration: 20240602 Address after: 201306, No. 299 Pingxiao Road, Lingang New Area, China (Shanghai) Pilot Free Trade Zone, Pudong New Area, Shanghai Patentee after: Shunyu Aolai Micro Nano Optics (Shanghai) Co.,Ltd. Country or region after: China Address before: No. 67-69, fengle Road, Yangming street, Yuyao City, Ningbo City, Zhejiang Province Patentee before: Ningbo sunny olai Technology Co.,Ltd. Country or region before: China |