CN116568122A - Preparation method and system of quantum abnormal Hall effect array device - Google Patents
Preparation method and system of quantum abnormal Hall effect array device Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/01—Manufacture or treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00166—Electrodes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
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- H—ELECTRICITY
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- H10N52/00—Hall-effect devices
- H10N52/101—Semiconductor Hall-effect devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
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- H—ELECTRICITY
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00
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Abstract
The invention provides a preparation method and a system of a quantum abnormal Hall effect array device, wherein the preparation method comprises the following steps: step 1, etching a quantum abnormal Hall film based on an etching mask plate to etch a plurality of array patterns on the quantum abnormal Hall film, wherein the array patterns are used for depositing electrodes of the quantum abnormal Hall film in corresponding areas; step 2: based on at least two electrode mask plates, aligning the quantum abnormal Hall film obtained in the step 1 to carry out film plating so as to deposit electrode films on the plurality of array patterns, thereby obtaining the quantum abnormal Hall effect array device; wherein different electrode masks correspond to different areas of the plurality of array patterns. The preparation method of the quantum abnormal Hall effect array device is simple and easy to realize and capable of improving the performance of the device.
Description
Technical Field
The invention relates to the technical field of micro-nano devices, in particular to a preparation method and a system of a quantum abnormal Hall effect array device.
Background
With the development of micro-nano processing device technology, the size of the micro-nano processing device is gradually reduced, the efficiency of the device is continuously reduced due to the increase of spontaneous leakage current and thermal noise, and the quantum abnormal Hall effect device achieves the effect of reducing the thermal noise generated by the micro-nano device.
However, the current preparation of quantum anomalous hall effect devices still faces the problems of difficult material growth, sensitive variability and difficult processing, which results in difficult preparation and poor performance of the quantum anomalous hall effect devices.
Disclosure of Invention
In view of the above, the present invention is directed to a method and a system for manufacturing a quantum abnormal hall effect array device, so as to solve the problems of difficult manufacturing and poor performance of the current quantum abnormal hall effect array device.
In order to achieve the above purpose, the technical scheme of the invention is realized as follows:
a method of fabricating a quantum anomalous hall effect array device comprising:
step 1, etching a quantum abnormal Hall film based on an etching mask plate to etch a plurality of array patterns on the quantum abnormal Hall film, wherein the array patterns are used for depositing electrodes of the quantum abnormal Hall film in corresponding areas;
step 2: based on at least two electrode mask plates, aligning the quantum abnormal Hall film obtained in the step 1 to carry out film plating so as to deposit electrode films on the plurality of array patterns, thereby obtaining the quantum abnormal Hall effect array device;
Wherein different electrode masks correspond to different areas of the plurality of array patterns.
Further, the area formed by the plurality of array patterns includes a center area and an edge area surrounding the center area; the at least two electrode masks comprise a first electrode mask and a second electrode mask, the first electrode mask corresponds to the central area, and the second electrode mask corresponds to the edge area.
Further, the step of coating the quantum abnormal hall film obtained in the step 1 based on at least two electrode mask plates includes:
coating the film on the central area based on the first electrode mask plate, and coating the film on the edge area based on the second electrode mask plate;
or, after the edge area is coated based on the second electrode mask plate, the central area is coated based on the first electrode mask plate.
Further, after the quantum anomalous hall effect array device is obtained, the preparation method further includes:
combining the quantum-anomalous hall effect array device with an insulating layer of a device mount, wherein the device mount further comprises an electrode layer;
And bonding the electrode layer with an electrode film of the quantum abnormal Hall effect array device to test the Hall resistance of the quantum abnormal Hall effect array device.
Further, the Hall resistance of the quantum anomalous Hall effect array device is larger than or equal to 25.55kΩ, and the error between the theoretical value of Hall resistance 25.812kΩ is smaller than 1%.
Further, before the step 1, the preparation method further includes:
cutting the quantum abnormal Hall film into a preset size, and placing the quantum abnormal Hall film into a fixing device, wherein the fixing device comprises a bottom plate and polydimethylsiloxane, and a substrate of the quantum abnormal Hall film is placed on one surface of the polydimethylsiloxane, which is away from the bottom plate, and is attached to the polydimethylsiloxane;
in the step 1, the etching of the quantum abnormal hall film based on the etching mask plate includes:
placing the etching mask plate on one surface of the quantum abnormal Hall film with the preset size, which is away from the substrate, and aligning the etching mask plate with the center of the quantum abnormal Hall film;
etching the quantum abnormal Hall film with the preset size based on the etching mask plate;
And the distance between the etching mask plate and the quantum abnormal Hall film does not exceed a preset distance.
Further, in the step 1, the etching method is argon ion bombardment etching, and the etching thickness is greater than or equal to 5nm;
and the thickness of the quantum abnormal Hall film is the same as the etching thickness.
Further, parameters adopted by the argon ion bombardment etching include: argon flow is 10sccm, beam voltage is 200V, acceleration voltage is 40V, and etching beam current is 4A.
Further, in the step 2, when the quantum abnormal hall film obtained in the step 1 is coated based on at least two electrode mask plates, thermal evaporation coating is adopted; the materials adopted by the thermal evaporation coating comprise chromium materials and gold materials;
wherein, the thickness of the film plated by the chromium material is 3nm, and the thickness of the film plated by the gold material is 50nm.
Compared with the prior art, the preparation method of the quantum abnormal Hall effect array device provided by the invention has the following advantages:
etching the quantum abnormal Hall film based on an etching mask plate to etch a plurality of array patterns on the quantum abnormal Hall film, wherein the array patterns are used for depositing electrodes of the quantum abnormal Hall film in corresponding areas; step 2: based on at least two electrode mask plates, aligning the quantum abnormal Hall film obtained in the step 1 to carry out film plating so as to deposit electrode films on the plurality of array patterns, thereby obtaining the quantum abnormal Hall effect array device; wherein different electrode masks correspond to different areas of the plurality of array patterns.
Etching the quantum abnormal Hall film based on the etching mask plate, and coating the etched quantum abnormal Hall film based on at least two electrode mask plates to obtain the quantum abnormal Hall effect array device. The quantum abnormal Hall effect array device prepared in this way is not contacted with organic solvents and alkaline developing solutions which are harmful to the device in the traditional preparation process, so that the purpose of protecting the performance of the device is achieved. And the whole process is simple and easy to realize, so that the exposure time of the device in the air is ensured to be short, the reaction time of water vapor and oxygen in the air and the device is reduced, the preparation difficulty is reduced, and the performance of the prepared quantum abnormal Hall effect array device is greatly improved.
Another object of the present invention is to provide a system for manufacturing a quantum anomalous hall effect array device, which solves the problems of difficult manufacturing and poor performance of the current quantum anomalous hall effect device.
In order to achieve the above purpose, the technical scheme of the invention is realized as follows:
a system for fabricating a quantum anomalous hall effect array device, comprising:
fixing device, etching mask plate and at least two electrode mask plates;
The fixing device is used for aligning and fixing the quantum abnormal Hall film, the etching mask plate and the at least two electrode mask plates respectively;
the etching mask plate is used for etching the quantum abnormal Hall film so as to etch a plurality of array patterns on the quantum abnormal Hall film, and the array patterns are used for forming electrodes of the quantum abnormal Hall film;
the at least two electrode mask plates are used for coating films on the etched quantum abnormal Hall films so as to form electrode films on the plurality of array patterns, and the quantum abnormal Hall effect array device is obtained;
wherein different electrode masks correspond to different areas of the plurality of array patterns.
The preparation system of the quantum abnormal hall effect array device and the preparation method of the quantum abnormal hall effect array device have the same advantages compared with the prior art, and are not described in detail herein.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention. In the drawings:
FIG. 1 is a flow chart showing the steps of a method for fabricating a quantum-anomalous Hall-effect array device according to a first embodiment of the invention;
FIG. 2 shows a schematic diagram of an etch mask design in accordance with an embodiment of the present invention;
FIG. 3a is a schematic diagram illustrating a first electrode mask according to an embodiment of the present invention;
FIG. 3b shows a schematic diagram of a second electrode mask according to an embodiment of the present invention;
FIG. 4 shows a schematic of the mechanism of a fixture according to an embodiment of the present invention;
FIG. 5 is a flowchart showing the test steps of a quantum-anomalous Hall-effect array device according to an embodiment of the invention;
FIG. 6 is a diagram of a sample of a quantum-anomalous Hall-effect array device according to a second embodiment of the invention;
FIG. 7 is a graph showing performance tests of a sample quantum-anomalous Hall-effect array device of embodiment two;
FIG. 8 is a diagram of a sample of a quantum-anomalous Hall-effect array device provided in accordance with a third embodiment of the invention;
FIG. 9 shows a graph of performance tests of a sample quantum-anomalous Hall-effect array device of embodiment three;
FIG. 10 is a diagram of a sample of a quantum-anomalous Hall-effect array device according to a fourth embodiment of the invention;
FIG. 11 is a graph showing performance tests of a sample quantum-anomalous Hall-effect array device of embodiment four;
Fig. 12 is a schematic diagram of a system for fabricating a quantum-anomalous hall-effect array device according to a fifth embodiment of the invention.
Reference numerals:
101-mask plate placement bits; 102-spring clips; 103-grooves; 104-polydimethylsiloxane placement bits; 105-floor.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that the embodiments of the present invention and the features of the embodiments may be combined with each other without collision.
Example 1
With the development of micro-nano processing device technology, the micro-nano processing device technology is widely applied to the chip and micro-electronics industry. However, as the size of the micro-nano device is gradually reduced, problems such as impurities and defects are encountered in the preparation process, and the stability and performance of the micro-nano device are more and more affected.
Due to the gradual reduction of the size of the device, the problems of spontaneous leakage current and increase of thermal noise are more likely to occur, and the efficiency of the device is continuously reduced. In addition, the reduction of the size of the device increases the power consumption of the chip, so that the heat dissipation effect of the chip is poor, and the performance of the device is affected.
In this case, the advent of quantum anomalous hall effect devices has brought a life-time to the microelectronics industry.
The quantum abnormal Hall effect (Quantum Anomalous Hall Effect, QAH) device is a novel electronic device based on two-dimensional topological materials, and the operating principle of the device is the quantum abnormal Hall effect principle, so that the device has the characteristics of high stability, low power consumption and high speed.
Hall effect refers to an electromagnetic effect theory, specifically: the application of a magnetic field perpendicular to the current direction in the semiconductor causes electrons and holes in the semiconductor to be concentrated in different directions by lorentz forces in different directions, and an electric field is generated between the concentrated electrons and holes. After the electric field force and the Lorentz force are balanced, the accumulation is avoided, and the subsequent electrons and holes can balance the Lorentz force generated by the magnetic field under the action of the electric field force, so that the subsequent electrons and holes can smoothly pass through without deflection.
Quantum hall effect is a quantum mechanical version of the hall effect, with the applied magnetic field, the hall resistance is quantized in value and the device edge conduction is non-scattering, known as ballistic transport. Thus, electrons do not generate heat during ballistic transport.
However, the quantum hall effect needs to be performed under the condition of an external strong magnetic field, which results in high application conditions and difficulty in large-scale application.
The quantum anomalous Hall effect device generates a magnetic field through spontaneous magnetization of the device material, and can realize the effect of a non-resistance edge conductive channel under the condition of no external magnetic field.
However, the current quantum anomalous Hall effect device still faces the problems of difficult material growth, sensitive variability and difficult processing in the preparation process.
First, the fabrication requirements for quantum anomalous hall effect devices are high. The device needs to prepare a nano-scale thick film, which needs a precise growth technology, and the growth of the nano-film with the size of 1mm to 3cm is mainly carried out by a molecular beam epitaxy method at present, and the ultra-high vacuum atmosphere needs to be ensured in the growth process. In addition, quantum anomalous hall effect devices need to be protected as much as possible from impurities and defects during fabrication, any minor impurities or defects having an impact on device performance.
In addition, the material of the quantum abnormal Hall effect device is sensitive to oxygen and water in the air, if the material is exposed in the air for too long, the hole transport property of the material is changed, the material cannot enter a quantized state, and the ballistic transport property cannot be realized. And, chemical reagents such as photoresist developer and the like which are usually needed in the micro-nano processing technology are very easy to damage the device, so that the performance of the device is reduced.
Moreover, the current quantum anomalous hall effect devices cannot be used for preparing large-area arrays, which results in the fact that the quantum anomalous hall effect devices cannot be applied in a large scale.
Accordingly, the present invention provides a method for fabricating a quantum anomalous hall effect array device to solve the above-mentioned problems.
Referring to fig. 1, fig. 1 is a flowchart showing steps of a method for fabricating a quantum anomalous hall effect array device according to a first embodiment of the invention, as shown in fig. 1, including:
step S101: etching the quantum abnormal Hall film based on the etching mask plate to etch a plurality of array patterns on the quantum abnormal Hall film, wherein the array patterns are used for depositing electrodes of the quantum abnormal Hall film in corresponding areas.
Referring to fig. 2, fig. 2 shows a schematic diagram of an etching mask according to an embodiment of the present invention, and as shown in fig. 2, in the embodiment of the present invention, when a quantum anomalous hall effect array device is manufactured, a quantum anomalous hall film is first placed in a fixing device, then an etching mask is placed on the quantum anomalous hall film, and the center of the etching mask is aligned with the center of the quantum anomalous hall film, and the quantum anomalous hall film is etched based on the etching mask.
In one specific implementation, the etched mask is a silicon nitride mask, including a hollowed-out area and a non-hollowed-out area.
The quantum anomalous hall film grows on the substrate and has a thickness of about 5nm.
When the quantum abnormal Hall film is etched, the quantum abnormal Hall film is etched based on the hollowed-out area of the etching mask plate, and the etching thickness is preset.
The preset thickness does not exceed the thickness of the quantum anomalous hall film, that is, the substrate is not etched in the etching process.
And forming a plurality of array patterns on the surface of the etched quantum abnormal Hall film, wherein the array patterns are used for forming electrodes of the quantum abnormal Hall film.
In one specific implementation, the quantum anomalous hall film is Cr y (Bi 1-x Sb x ) 2 Te 3 。
Then step S102 is performed.
Step S102: based on at least two electrode mask plates, aligning the quantum abnormal Hall film obtained in the step 1 to carry out film plating so as to deposit electrode films on the plurality of array patterns, thereby obtaining the quantum abnormal Hall effect array device;
wherein different electrode masks correspond to different areas of the plurality of array patterns.
And after etching the quantum abnormal Hall film, taking down the etching mask plate.
And sequentially placing at least two electrode mask plates on the etched quantum abnormal Hall film, and aligning the centers of the electrode mask plates with the centers of the etched quantum abnormal Hall film so as to coat the etched quantum abnormal Hall film based on the electrode mask plates.
In a specific implementation, at least two electrode masks are silicon nitride masks, including a hollowed-out area and a non-hollowed-out area.
And (3) coating films on the quantum abnormal Hall films obtained in the step (S101) based on the hollowed-out areas of at least two electrode mask plates in sequence, and forming electrode films on the plurality of array patterns obtained by etching.
In one embodiment, at least two electrode masks differ in size between corresponding to different regions of the plurality of array patterns.
And after the coating of the electrode film is completed, obtaining the quantum abnormal Hall effect array device.
Etching the quantum abnormal Hall film based on an etching mask plate to etch a plurality of array patterns on the quantum abnormal Hall film, wherein the array patterns are used for depositing electrodes of the quantum abnormal Hall film; step 2: based on at least two electrode mask plates, aligning the quantum abnormal Hall film obtained in the step 1 to carry out film plating so as to deposit electrode films on the plurality of array patterns, thereby obtaining the quantum abnormal Hall effect array device; wherein different electrode masks correspond to different areas of the plurality of array patterns.
Etching the quantum abnormal Hall film based on the etching mask plate, and coating the etched quantum abnormal Hall film based on at least two electrode mask plates to obtain the quantum abnormal Hall effect array device. The quantum abnormal Hall effect array device prepared in this way is not contacted with organic solvents and alkaline developing solutions which are harmful to the device in the traditional preparation process, so that the purpose of protecting the performance of the device is achieved. And the whole process is simple and easy to realize, so that the exposure time of the device in the air is ensured to be short, the reaction time of water vapor and oxygen in the air and the device is reduced, the preparation difficulty is reduced, and the performance of the prepared quantum abnormal Hall effect array device is greatly improved.
In an alternative embodiment, in the step S101, the etching method is argon ion bombardment etching, where the etching thickness is greater than or equal to 5nm;
and the thickness of the quantum abnormal Hall film is the same as the etching thickness.
In an alternative embodiment, the parameters used for the argon ion bombardment etching include: argon flow is 10sccm, beam voltage is 200V, acceleration voltage is 40V, and etching beam current is 4A.
In an alternative embodiment, the area formed by the plurality of array patterns includes a central area and an edge area surrounding the central area; the at least two electrode masks comprise a first electrode mask and a second electrode mask, the first electrode mask corresponds to the central area, and the second electrode mask corresponds to the edge area.
In an embodiment of the invention, the surface of the etched quantum anomalous hall film forms a plurality of array patterns, and the array patterns comprise a central area and edge areas surrounding the central area.
Referring to fig. 3a to 3b, fig. 3a shows a schematic design diagram of a first electrode mask according to an embodiment of the present invention, and fig. 3b shows a schematic design diagram of a second electrode mask according to an embodiment of the present invention, where, as shown in fig. 3a to 3b, when coating a quantum anomalous hall thin film after etching, two electrode masks are used for coating.
The first electrode mask plate and the second electrode mask plate are different in size and design, and the corresponding quantum abnormal Hall film is different in area.
The first electrode mask plate corresponds to the central region, and the second electrode mask plate corresponds to the edge region.
According to the embodiment of the invention, the problem of smaller size caused by the mechanical property of the silicon nitride material of the mask plate is solved by using the two electrode mask plates. And the two electrode masks are designed to correspond to different areas of the quantum abnormal Hall film, so that a complete electrode film is formed on the quantum abnormal Hall film after the film is coated twice, the problem that the device contacts an organic solvent and an alkaline developer in the traditional process is avoided, and the performance of the device is greatly improved.
In an alternative embodiment, in step S101, before etching the quantum abnormal hall film based on the etching mask, the method further includes sub-steps A1 to A3.
Substep A1: cutting the quantum abnormal Hall film into a preset size, and placing the quantum abnormal Hall film into a fixing device, wherein the fixing device comprises a bottom plate and polydimethylsiloxane, and a substrate of the quantum abnormal Hall film is placed on one surface of the polydimethylsiloxane, which is away from the bottom plate, and is attached to the polydimethylsiloxane.
Referring to fig. 4, fig. 4 shows a schematic mechanism of a fixing device according to an embodiment of the present invention, as shown in fig. 4, including:
mask placement bits 101 for placing a mask, including etching a mask and an electrode mask;
the spring clamping piece 102 is used for fixedly clamping the mask plate;
a groove 103 for placing a quantum anomalous hall thin film sample;
a polydimethylsiloxane placement site 104 for placing polydimethylsiloxane;
a base plate 105.
Wherein, the bottom plate can be corrosion resistant plate, and the recess degree of depth is 0.5mm.
Before etching the quantum abnormal Hall film, firstly cutting the quantum abnormal Hall film material into a preset size so as to facilitate preparation.
In one specific implementation, the predetermined dimension is 3mm long and 3mm wide.
And the quantum abnormal Hall film with the preset size is placed in the groove, and Polydimethylsiloxane (PDMS) is preset in the groove, so that the upper surface of the quantum abnormal Hall film is consistent with the upper surface of the bottom plate in height, and the buffer effect is achieved.
The quantum abnormal Hall film is arranged on one surface of the polydimethylsiloxane, which is away from the bottom plate, and is attached to the polydimethylsiloxane.
Then sub-step A2 is performed.
Substep A2: and placing the etching mask plate on one surface of the quantum abnormal Hall film with the preset size, which is away from the substrate, and aligning the etching mask plate with the center of the quantum abnormal Hall film.
And the distance between the etching mask plate and the quantum abnormal Hall film does not exceed a preset distance.
And placing the etching mask plate on a mask plate placing position.
It is understood that the quantum abnormal hall film grows on the substrate, when the quantum abnormal hall film is placed, the substrate is contacted with one side of the polydimethylsiloxane, which is away from the bottom plate, the quantum abnormal hall film grows on one side of the substrate, which is away from the polydimethylsiloxane, and the etching mask plate is placed on one side of the quantum abnormal hall film, which is away from the substrate.
And then aligning the center of the etching mask plate with the center of the quantum abnormal Hall film, and using a spring clamping piece to fixedly clamp the etching mask plate, so that the distance between the etching mask plate and the quantum abnormal Hall film does not exceed a preset distance.
In one specific implementation, the preset distance is 10 μm.
Then sub-step A3 is performed.
Substep A3: and etching the quantum abnormal Hall film with the preset size based on the etching mask plate.
And (3) integrally placing the fixed fixing device into an argon ion etching machine, and etching the quantum abnormal Hall film with the preset size based on the hollowed-out area of the etching mask plate according to preset etching parameters so as to form a plurality of array patterns on the surface of the quantum abnormal Hall film with the preset size.
And after the etching is finished, the etching mask plate on the fixing device is taken down.
In an alternative embodiment, the above step S102 may be implemented by the following sub-steps B11 to B12:
substep B11: and coating the film on the central area based on the first electrode mask plate.
Substep B12: and coating the film on the edge area based on the second electrode mask plate.
When the quantum abnormal hall film is coated based on the two electrode masks, the central area of the quantum abnormal hall film can be coated based on the first electrode mask, after the electrode film is formed in the central area, the edge area of the quantum abnormal hall film is coated based on the second electrode mask, and finally the complete electrode film is formed.
The plating process will be described below.
And (3) keeping the etched quantum abnormal Hall film to be placed on one surface of the polydimethylsiloxane, which is away from the bottom plate, placing the first electrode mask plate on a mask plate placing position of the fixing device, aligning the center of the first electrode mask plate with the center of the quantum abnormal Hall film, and fixing and clamping by using a spring clamping piece.
In one embodiment, the above process may be performed under microscopic observation to avoid scratching of the thin film material and to prevent misalignment between the mask and the etched thin film.
And (5) placing the fixing device into a vacuum coating machine to coat the central area.
And after the coating based on the first electrode mask plate is completed, taking out the fixing device, taking down the first electrode mask plate, and placing the second electrode mask plate so as to coat the edge area.
The process of placing the second electrode mask plate and coating the edge area is the same as the process of placing the first electrode mask plate and coating the center area, and will not be described here.
In an alternative embodiment, the above step S102 may also be implemented by the following sub-steps B21 to B22:
substep B21: and coating the film on the edge area based on the second electrode mask plate.
Substep B22: and coating the film on the central area based on the first electrode mask plate.
When the quantum abnormal hall film is coated based on the two electrode masks, the edge area of the quantum abnormal hall film can be coated based on the second electrode mask, after the electrode film is formed in the edge area, the central area of the quantum abnormal hall film is coated based on the first electrode mask, and finally the complete electrode film is formed.
The plating process will be described below.
And (3) keeping the etched quantum abnormal Hall film to be placed on one surface of the polydimethylsiloxane, which is away from the bottom plate, placing a second electrode mask plate on a mask plate placing position of the fixing device, aligning the center of the second electrode mask plate with the center of the quantum abnormal Hall film, and fixing and clamping by using a spring clamping piece.
In one embodiment, the above process may be performed under microscopic observation to avoid scratching of the thin film material and to prevent misalignment between the mask and the etched thin film.
And (5) placing the fixing device into a vacuum coating machine to coat the edge area.
And after the film coating based on the second electrode mask plate is completed, taking out the fixing device, taking down the second electrode mask plate, and placing the first electrode mask plate so as to coat the central area.
The process of placing the first electrode mask plate and coating the central area is the same as the process of placing the second electrode mask plate and coating the edge area, and will not be described here.
According to the embodiment of the invention, the quantum abnormal Hall film, the etching mask plate and the electrode mask plate are placed and fixed through the fixing device, so that the accuracy of alignment between the film and the mask plate is improved, and the performance of the prepared device is further improved.
In an alternative embodiment, in the step S102, when the quantum abnormal hall film obtained in the step S101 is coated based on at least two electrode masks, thermal evaporation coating is adopted; the materials adopted by the thermal evaporation coating comprise chromium materials and gold materials;
wherein, the thickness of the film plated by the chromium material is 3nm, and the thickness of the film plated by the gold material is 50nm.
Thermal evaporation coating refers to a coating method in which solid materials are heated and evaporated under vacuum conditions, so that evaporated material particles are deposited on the surface of a device.
In an alternative embodiment, after the quantum-anomalous hall-effect array device is obtained, the device is combined with a device holder and the device holder is combined with a test electrode to test the hall resistance of the quantum-anomalous hall-effect array device.
Referring to fig. 5, fig. 5 shows a flowchart of test steps for a quantum-anomalous hall-effect array device according to an embodiment of the invention, as shown in fig. 5, including:
step S501: the quantum-anomalous hall effect array device is combined with an insulating layer of a device mount, wherein the device mount further comprises an electrode layer.
Step S502: and bonding the electrode layer with an electrode film of the quantum abnormal Hall effect array device to test the Hall resistance of the quantum abnormal Hall effect array device.
After the quantum anomalous hall effect array device is prepared, the hall resistance of the device needs to be tested.
The device support is an object for fixing the device and connecting the electrode layers of the device, and comprises an insulating layer and an electrode layer, wherein the insulating layer is used for being jointed with the device, and the electrode layer is used for being bonded with the electrode layer of the device.
Firstly, the prepared quantum abnormal Hall effect array device is placed on a device support, and the device is bonded with an insulating layer of the device support by using silver colloid.
And then bonding the electrode layer of the device support with the electrode layer of the quantum abnormal Hall effect array device by using a bonding machine, and placing the bonded device and the device support into a dilution refrigerator for testing.
During the test, a source meter is used to output current to the quantum anomalous hall effect array device, the current enters the device from two ends of the device, at the moment, a magnetic field is applied to the device, and meanwhile, voltages are measured at the other two ends of the device, which are perpendicular to the two ends of the current entering.
And calculating the Hall resistance of the quantum abnormal Hall effect array device based on the current parameter and the voltage parameter obtained by the test.
In an alternative embodiment, the quantum-anomalous hall effect array device has a hall resistance greater than or equal to 25.55kΩ and an error between the theoretical value of hall resistance 25.812kΩ of less than 1%.
The hall resistance theoretical value is a recommended value of the quantum hall resistance specified by the international commission on measurement.
The closer to hall resistance theory value indicates the better performance of the quantum anomalous hall effect array device.
The Hall resistance of the quantum anomalous Hall effect array device provided by the embodiment of the invention has a small difference from a theoretical value, and the difference can be attributed to a certain error in a test experiment. That is, the quantum anomalous hall effect array device provided by the embodiment of the invention has excellent performance.
The following describes in detail a specific flow of a method for manufacturing a quantum anomalous hall effect array device according to an embodiment of the invention.
After the quantum abnormal Hall film material is cut into preset sizes with the length of 3mm and the width of 3mm, the quantum abnormal Hall film with the preset size is placed in a groove of a fixing device, polydimethylsiloxane (PDMS) is preset in the groove, and the quantum abnormal Hall film is placed on one surface of the polydimethylsiloxane, which is far away from a bottom plate, and is attached to the polydimethylsiloxane.
It is understood that the quantum abnormal hall film grows on the substrate, when the quantum abnormal hall film is placed, the substrate is contacted with one side of the polydimethylsiloxane, which is away from the bottom plate, the quantum abnormal hall film grows on one side of the substrate, which is away from the polydimethylsiloxane, and the etching mask plate is placed on one side of the quantum abnormal hall film, which is away from the substrate.
And then aligning the center of the etching mask plate with the center of the quantum abnormal Hall film, and fixing and clamping the etching mask plate by using a spring clamping piece of a fixing device, so that the distance between the etching mask plate and the quantum abnormal Hall film is not more than 10 mu m.
And (3) integrally placing the fixed fixing device into an argon ion etching machine, and etching the quantum abnormal Hall film with the preset size based on the hollowed-out area of the etching mask plate according to preset etching parameters so as to form a plurality of array patterns on the surface of the quantum abnormal Hall film with the preset size.
The preset etching parameters are that the argon flow is 10sccm, the beam voltage is 200V, the acceleration voltage is 40V and the etching beam current is 4A.
And after the etching is finished, the etching mask plate on the fixing device is taken down.
The etched quantum abnormal hall film surface forms a plurality of array patterns which are divided into a central region and an edge region surrounding the central region.
And then coating the etched quantum abnormal Hall film based on the electrode mask plate.
When in coating, the central area can be coated based on the first electrode mask plate, and then the edge area can be coated based on the second electrode mask plate;
or after the edge area is coated based on the second electrode mask plate, the central area is coated based on the first electrode mask plate.
The following description will be given by taking the first way as an example.
And (3) keeping the etched quantum abnormal Hall film to be placed on one surface of the polydimethylsiloxane, which is away from the bottom plate, placing the first electrode mask plate on a mask plate placing position of the fixing device, aligning the center of the first electrode mask plate with the center of the quantum abnormal Hall film, and fixing and clamping by using a spring clamping piece.
The process can be operated under the observation of a microscope so as to avoid scratch damage of the film material and prevent deviation of alignment positions between the mask plate and the etched film.
The fixing device is placed in a vacuum coating machine, a thermal evaporation coating method is used for coating the central area, and the materials adopted in coating comprise chromium materials and gold materials.
Wherein, the thickness of the film plated by the chromium material is 3nm, and the thickness of the film plated by the gold material is 50nm.
And after the coating based on the first electrode mask plate is completed, taking out the fixing device, taking down the first electrode mask plate, and placing the second electrode mask plate so as to coat the edge area.
The process of placing the second electrode mask plate and coating the edge area is the same as the process of placing the first electrode mask plate and coating the center area, and will not be described here.
And obtaining the prepared quantum abnormal Hall effect array device, and then testing the Hall resistance of the device.
And placing the prepared quantum abnormal Hall effect array device on a device support, and bonding the device and an insulating layer of the device support by using silver colloid.
And then bonding the electrode layer of the device support with the electrode layer of the quantum abnormal Hall effect array device by using a bonding machine, and placing the bonded device and the device support into a dilution refrigerator for testing.
The test result shows that the Hall resistance of the device is larger than or equal to 25.55kΩ, and the error between the Hall resistance theoretical value 25.812kΩ and the Hall resistance theoretical value is smaller than 1%.
Example two
The second embodiment of the invention provides a preparation example of a quantum anomalous Hall effect array device.
Referring to fig. 6, fig. 6 shows a sample diagram of a quantum anomalous hall effect array device according to a second embodiment of the invention, and the preparation of the sample includes the following steps:
Step 21: cutting the quantum abnormal Hall film material to obtain the quantum abnormal Hall film with the preset size.
The quantum abnormal Hall film material is Cr y (Bi 1-x Sb x ) 2 Te 3 It is specifically the parameter Cr 0.092 (Bi,Sb) 1.908 Te 3 The film sample was grown on a gallium arsenide substrate and stored in a glove box.
A glove box refers to a laboratory apparatus filled with a high purity inert gas and capable of circulating filtration of active substances therein.
Before preparing the quantum abnormal Hall effect array device, firstly cutting the quantum abnormal Hall film material into quantum abnormal Hall film samples with the length of 3mm and the width of 3mm, wherein the cut shape of the film is triangle or diamond due to the lattice orientation of the gallium arsenide substrate, and the side length of the film is 3mm.
Step 22: and etching the quantum abnormal Hall film sample based on the etching mask plate.
And placing a film sample in a groove of the fixing device, wherein Polydimethylsiloxane (PDMS) is preset in the groove, and the film sample is placed on one surface of the polydimethylsiloxane, which is away from the bottom plate, and is attached to the polydimethylsiloxane.
It is understood that the quantum abnormal hall film grows on the substrate, when the quantum abnormal hall film is placed, the substrate is contacted with one side of the polydimethylsiloxane, which is away from the bottom plate, the quantum abnormal hall film grows on one side of the substrate, which is away from the polydimethylsiloxane, and the etching mask plate is placed on one side of the quantum abnormal hall film, which is away from the substrate.
And then aligning the center of the etching mask plate with the center of the film sample, and using a spring clamping piece of the fixing device to fix and clamp the etching mask plate, so that the distance between the etching mask plate and the film sample is not more than 10 mu m.
And (3) integrally placing the fixed fixing device into an argon ion etching machine, and etching the film sample based on the hollowed-out area of the etching mask plate according to preset etching parameters of 10sccm of argon flow, 200V of beam voltage, 40V of acceleration voltage and 4A of etching beam current so as to form a plurality of array patterns on the surface of the film sample, wherein the array patterns are divided into a central area and an edge area surrounding the central area.
The etched film sample was about 50 μm long, about 50 μm wide and 5nm thick.
Step 23: and (4) coating the quantum abnormal Hall film sample obtained in the step (22) on the basis of the first electrode mask plate and the second electrode mask plate in sequence.
And taking out the etched film sample, and fixing the film sample on a two-dimensional material transfer table after modification.
And (3) keeping the etched film sample placed on one surface of the polydimethylsiloxane, which is far away from the bottom plate, placing the first electrode mask plate on a mask plate placing position of the fixing device, aligning the center of the first electrode mask plate with the center of the film sample, and fixing and clamping by using a spring clamping piece.
The process can be operated under the observation of a microscope to avoid scratch damage of the film sample material and prevent deviation of alignment positions between the mask plate and the etched film sample.
The fixing device is placed in a vacuum coating machine, a thermal evaporation coating method is used for coating the central area, and the materials adopted in coating comprise chromium materials and gold materials.
Wherein, the thickness of the film plated by the chromium material is 3nm, and the thickness of the film plated by the gold material is 50nm.
And after the coating based on the first electrode mask plate is completed, taking out the fixing device, taking down the first electrode mask plate, and placing the second electrode mask plate so as to coat the edge area.
The process of placing the second electrode mask plate and coating the edge area is the same as the process of placing the first electrode mask plate and coating the center area, and will not be described here.
And obtaining a quantum abnormal Hall effect array device sample.
Step 24: and testing the prepared quantum abnormal Hall effect array device sample.
And placing the prepared quantum abnormal Hall effect array device sample on a device support, and bonding the device sample with an insulating layer of the device support by using silver colloid.
And then bonding the electrode layer of the device support and the electrode layer of the device sample by using a bonding machine, and placing the bonded device sample and the device support into a dilution refrigerator for testing.
In the test process, a source meter is used for outputting current to a device sample, the current enters the device sample from two ends of the device sample, at the moment, a magnetic field is applied to the device sample, and meanwhile, voltages are measured at the other two ends of the device sample, which are perpendicular to the two ends of the current.
And calculating the Hall resistance of the device sample based on the current parameter and the voltage parameter.
Referring to fig. 7, fig. 7 shows a graph of performance test of a sample of a quantum anomalous hall effect array device according to the second embodiment, and as shown in fig. 7, the test result shows that the hall resistance of the sample of the device is consistent, and is a typical measurement result of quantum anomalous hall effect, and the error between the hall resistance is greater than or equal to 25.55kΩ and the theoretical value of the hall resistance 25.812kΩ is less than 1%.
Example III
The third embodiment of the invention provides a preparation example of a quantum anomalous Hall effect array device.
Referring to fig. 8, fig. 8 shows a sample of a quantum anomalous hall effect array device according to a third embodiment of the invention, and the preparation of the sample includes the following steps, as shown in fig. 8:
Step 31: cutting the quantum abnormal Hall film material to obtain the quantum abnormal Hall film with the preset size.
The implementation of step 31 is the same as that of step 21, and will not be described here again.
Step 32: and etching the quantum abnormal Hall film sample based on the etching mask plate.
The implementation of step 32 is the same as that of step 22 described above, and will not be described here again.
Step 33: and (3) coating the quantum anomalous hall film sample obtained in the step 32 based on the second electrode mask plate.
And taking out the etched film sample, and fixing the film sample on a two-dimensional material transfer table after modification.
And (3) keeping the etched film sample placed on one surface of the polydimethylsiloxane, which is far away from the bottom plate, placing a second electrode mask plate on a mask plate placing position of the fixing device, aligning the center of the second electrode mask plate with the center of the film sample, and fixing and clamping by using a spring clamping piece.
The process can be operated under the observation of a microscope to avoid scratch damage of the film sample material and prevent deviation of alignment positions between the mask plate and the etched film sample.
The fixing device is placed in a vacuum coating machine, a thermal evaporation coating method is used for coating the edge area, and the materials adopted in coating comprise chromium materials and gold materials.
Wherein, the thickness of the film plated by the chromium material is 3nm, and the thickness of the film plated by the gold material is 50nm.
And obtaining a quantum abnormal Hall effect array device sample.
Step 34: and testing the prepared quantum abnormal Hall effect array device sample.
The implementation of step 34 is the same as that of step 24 described above, and will not be described here again.
Referring to fig. 9, fig. 9 shows a graph of performance test of a quantum-anomalous hall effect array device sample according to the third embodiment, and as shown in fig. 9, the test result shows that the hall resistance of the device sample is consistent, and is a typical measurement result of quantum-anomalous hall effect, and the hall resistance is greater than or equal to 25.55kΩ, and the error between the theoretical value of hall resistance 25.812kΩ is less than 1%.
Example IV
The fourth embodiment of the invention provides a preparation example of a quantum anomalous Hall effect array device.
Referring to fig. 10, fig. 10 shows a sample diagram of a quantum anomalous hall effect array device according to a fourth embodiment of the invention, and the preparation of the sample includes the following steps:
step 41: cutting the quantum abnormal Hall film material to obtain the quantum abnormal Hall film with the preset size.
The quantum abnormal Hall film material is Cr y (Bi 1-x Sb x ) 2 Te 3 The film sample was grown on a gallium arsenide substrate and stored in a glove box.
Before preparing the quantum abnormal Hall effect array device, firstly cutting the quantum abnormal Hall film material into quantum abnormal Hall film samples with the length of 3mm and the width of 3mm, wherein the cut shape of the substrate is triangle and the side length of the substrate is 3mm due to the lattice orientation of the gallium arsenide substrate.
Step 42: and etching the quantum abnormal Hall film sample based on the etching mask plate.
And placing a film sample in a groove of the fixing device, wherein polydimethylsiloxane is preset in the groove, and the film sample is placed on one surface of the polydimethylsiloxane, which is far away from the bottom plate, and is attached to the polydimethylsiloxane.
And placing the etching mask plate in a mask plate placing position in the fixing device.
It is understood that the quantum abnormal hall film grows on the substrate, when the quantum abnormal hall film is placed, the substrate is contacted with one side of the polydimethylsiloxane, which is away from the bottom plate, the quantum abnormal hall film grows on one side of the substrate, which is away from the polydimethylsiloxane, and the etching mask plate is placed on one side of the quantum abnormal hall film, which is away from the substrate.
And then aligning the center of the etching mask plate with the center of the film sample, and using a spring clamping piece of the fixing device to fix and clamp the etching mask plate, so that the distance between the etching mask plate and the film sample is not more than 10 mu m.
And (3) integrally placing the fixed fixing device into an argon ion etching machine, and etching the film sample based on the hollowed-out area of the etching mask plate according to preset etching parameters of 10sccm of argon flow, 200V of beam voltage, 40V of acceleration voltage and 4A of etching beam current so as to form a plurality of array patterns on the surface of the film sample, wherein the array patterns are divided into a central area and an edge area surrounding the central area.
The etched film sample was about 50 μm long, about 50 μm wide and 5nm thick.
Step 43: and (3) coating the quantum anomalous hall film sample obtained in the step (42) based on the second electrode mask plate.
The implementation of step 43 is the same as that of step 23, and will not be described again here.
Step 44: and testing the prepared quantum abnormal Hall effect array device sample.
The implementation of step 44 is the same as that of step 24 described above, and will not be described here again.
Referring to fig. 11, fig. 11 shows a graph of performance test of a sample of a quantum-anomalous hall effect array device according to the fourth embodiment, and as shown in fig. 11, the test result shows that the hall resistance of the sample of the device is consistent, and is a typical measurement result of quantum-anomalous hall effect, and the hall resistance is greater than or equal to 25.55kΩ, and the error between the theoretical value of hall resistance 25.812kΩ is less than 1%.
Example five
Referring to fig. 12, fig. 12 is a schematic diagram showing a structure of a preparation system of a quantum anomalous hall effect array device according to a fifth embodiment of the invention, as shown in fig. 12, including:
a fixture 1201, an etching mask 1202, and at least two electrode masks 1203;
the fixing device 1201 is configured to align and fix the quantum abnormal hall thin film with the etching mask plate and the at least two electrode mask plates respectively;
the etching mask 1202 is configured to etch the quantum abnormal hall film to etch a plurality of array patterns on the quantum abnormal hall film, where the plurality of array patterns are used to form electrodes of the quantum abnormal hall film;
the at least two electrode mask plates 1203 are configured to perform film plating on the etched quantum abnormal hall thin film, so as to form electrode films on the plurality of array patterns, thereby obtaining the quantum abnormal hall effect array device;
wherein different electrode masks correspond to different areas of the plurality of array patterns.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, alternatives, and improvements that fall within the spirit and scope of the invention.
For the purposes of simplicity of explanation, the methodologies are shown as a series of acts, but one of ordinary skill in the art will recognize that the present invention is not limited by the order of acts described, as some acts may, in accordance with the present invention, occur in other orders and concurrently. Further, those skilled in the art will recognize that the embodiments described in the specification are all of the preferred embodiments, and that the acts and components referred to are not necessarily required by the present invention.
The above detailed description of the preparation method and system of a quantum anomalous hall effect array device provided by the invention applies specific examples to illustrate the principle and implementation of the invention, and the above examples are only used to help understand the method and core idea of the invention; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in accordance with the ideas of the present invention, the present description should not be construed as limiting the present invention in view of the above.
Claims (10)
1. A method of fabricating a quantum-anomalous hall-effect array device, the method comprising:
Step 1, etching a quantum abnormal Hall film based on an etching mask plate to etch a plurality of array patterns on the quantum abnormal Hall film, wherein the array patterns are used for depositing electrodes of the quantum abnormal Hall film in corresponding areas;
step 2: based on at least two electrode mask plates, aligning the quantum abnormal Hall film obtained in the step 1 to carry out film plating so as to deposit electrode films on the plurality of array patterns, thereby obtaining the quantum abnormal Hall effect array device;
wherein different electrode masks correspond to different areas of the plurality of array patterns.
2. The method of manufacturing according to claim 1, wherein the region formed by the plurality of array patterns includes a center region and an edge region surrounding the center region; the at least two electrode masks comprise a first electrode mask and a second electrode mask, the first electrode mask corresponds to the central area, and the second electrode mask corresponds to the edge area.
3. The preparation method according to claim 2, wherein the step of coating the quantum anomalous hall thin film obtained in the step 1 based on at least two electrode masks comprises:
Coating the film on the central area based on the first electrode mask plate, and coating the film on the edge area based on the second electrode mask plate;
or, after the edge area is coated based on the second electrode mask plate, the central area is coated based on the first electrode mask plate.
4. The method of manufacturing of claim 1, wherein after said obtaining said quantum-anomalous hall-effect array device, said method of manufacturing further comprises:
combining the quantum-anomalous hall effect array device with an insulating layer of a device mount, wherein the device mount further comprises an electrode layer;
and bonding the electrode layer with an electrode film of the quantum abnormal Hall effect array device to test the Hall resistance of the quantum abnormal Hall effect array device.
5. The method of claim 4, wherein the quantum-anomalous hall-effect array device has a hall resistance greater than or equal to 25.55kΩ and an error between the theoretical value of hall resistance 25.812kΩ of less than 1%.
6. The method of claim 1, wherein prior to step 1, the method further comprises:
Cutting the quantum abnormal Hall film into a preset size, and placing the quantum abnormal Hall film into a fixing device, wherein the fixing device comprises a bottom plate and polydimethylsiloxane, and a substrate of the quantum abnormal Hall film is placed on one surface of the polydimethylsiloxane, which is away from the bottom plate, and is attached to the polydimethylsiloxane;
in the step 1, the etching of the quantum abnormal hall film based on the etching mask plate includes:
placing the etching mask plate on one surface of the quantum abnormal Hall film with the preset size, which is away from the substrate, and aligning the etching mask plate with the center of the quantum abnormal Hall film;
etching the quantum abnormal Hall film with the preset size based on the etching mask plate;
and the distance between the etching mask plate and the quantum abnormal Hall film does not exceed a preset distance.
7. The method according to claim 1, wherein in the step 1, the etching is performed by argon ion bombardment etching, and the etching thickness is greater than or equal to 5nm;
and the thickness of the quantum abnormal Hall film is the same as the etching thickness.
8. The method of claim 7, wherein the parameters used for the argon ion bombardment etching include: argon flow is 10sccm, beam voltage is 200V, acceleration voltage is 40V, and etching beam current is 4A.
9. The method according to claim 1, wherein in the step 2, thermal evaporation coating is adopted when the quantum anomalous hall thin film obtained in the step 1 is coated based on at least two electrode masks; the materials adopted by the thermal evaporation coating comprise chromium materials and gold materials;
wherein, the thickness of the film plated by the chromium material is 3nm, and the thickness of the film plated by the gold material is 50nm.
10. A system for fabricating a quantum-anomalous hall-effect array device, the system comprising:
fixing device, etching mask plate and at least two electrode mask plates;
the fixing device is used for aligning and fixing the quantum abnormal Hall film, the etching mask plate and the at least two electrode mask plates respectively;
the etching mask plate is used for etching the quantum abnormal Hall film so as to etch a plurality of array patterns on the quantum abnormal Hall film, and the array patterns are used for forming electrodes of the quantum abnormal Hall film;
The at least two electrode mask plates are used for coating films on the etched quantum abnormal Hall films so as to form electrode films on the plurality of array patterns, and the quantum abnormal Hall effect array device is obtained;
wherein different electrode masks correspond to different areas of the plurality of array patterns.
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