CN116429805A - Bearing device for test analysis, forming method thereof and test analysis method - Google Patents

Bearing device for test analysis, forming method thereof and test analysis method Download PDF

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Publication number
CN116429805A
CN116429805A CN202310386004.7A CN202310386004A CN116429805A CN 116429805 A CN116429805 A CN 116429805A CN 202310386004 A CN202310386004 A CN 202310386004A CN 116429805 A CN116429805 A CN 116429805A
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substrate
hole
tested
along
test analysis
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王欣
崔慧成
徐高峰
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Changxin Memory Technologies Inc
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Changxin Memory Technologies Inc
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/20008—Constructional details of analysers, e.g. characterised by X-ray source, detector or optical system; Accessories therefor; Preparing specimens therefor
    • G01N23/20025—Sample holders or supports therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65—Raman scattering
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N24/00—Investigating or analyzing materials by the use of nuclear magnetic resonance, electron paramagnetic resonance or other spin effects
    • G01N24/10—Investigating or analyzing materials by the use of nuclear magnetic resonance, electron paramagnetic resonance or other spin effects by using electron paramagnetic resonance

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  • Physics & Mathematics (AREA)
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Abstract

The present disclosure relates to a carrier device for test analysis, a forming method thereof, and a test analysis method. The carrying device for test analysis comprises: the substrate is provided with a through hole penetrating through the substrate along a first direction, and the first direction is perpendicular to the top surface of the substrate; the supporting layer is positioned on the top surface of the substrate and used for bearing a film layer to be detected, a sample signal generated by the film layer to be detected can pass through the supporting layer and the through hole, and the substrate can shield the sample signal. The method and the device simplify the operation of testing and analyzing the film to be tested, improve the efficiency of analyzing the film to be tested, and can realize the representation of the film to be tested with the thickness of sub-nanometer level.

Description

Bearing device for test analysis, forming method thereof and test analysis method
Technical Field
The disclosure relates to the technical field of semiconductor testing, and in particular relates to a bearing device for testing analysis, a forming method thereof and a testing analysis method.
Background
Thin films (Thin films) of various sizes and/or materials are required to be prepared and characterized in the integrated circuit process to test the performance of the films, and reference is provided for improving the integrated circuit process. Microelectronic and deep submicron chip technology development requires that the dimensions of semiconductor devices be continually reduced and that the aspect ratios of the devices be continually increased, which results in the thickness of the materials forming the devices to be reduced to the order of a few nanometers. Among them, atomic layer deposition (Atomic layer deposition, ALD) technology has a wide application potential in various fields of semiconductor devices, optical devices, biological materials, micro-nano structure electromechanical systems, etc., due to high controllability of deposition parameters (such as thickness, composition and structure), excellent deposition uniformity and thickness uniformity. The atomic Layer deposition structure is formed on the surface of a substrate Layer by Layer in the form of a monoatomic Layer film to form a Sub-Nano Layer. Atomic layer deposition processes can even produce monoatomic layer films. However, since the film formed by the atomic layer deposition process is of sub-nanometer level, powder sample preparation cannot be realized, and tabletting sample preparation cannot be realized, so that the film with sub-nanometer level thickness cannot be characterized, and improvement of the semiconductor manufacturing process and further improvement of the semiconductor manufacturing yield are finally limited. In addition, for films with thicker thickness, powder sample preparation or tabletting sample preparation is often required before test analysis, so that the operation is complex, and the efficiency of the film test analysis is reduced.
Therefore, how to simplify the operation of testing and analyzing the thin film, improve the efficiency of thin film characterization, and realize the characterization of thin films (such as sub-nanometer thin films) to provide references for improving the semiconductor manufacturing process and improving the semiconductor manufacturing yield is a technical problem to be solved currently.
Disclosure of Invention
Some embodiments of the present disclosure provide a carrying device for testing and analyzing, a forming method thereof, and a testing and analyzing method thereof, which are used for simplifying the operation of testing and analyzing a thin film, and realizing the analysis and characterization of the thin film with a smaller thickness, so as to provide references for improving the semiconductor manufacturing process and improving the semiconductor manufacturing yield.
According to some embodiments, the present disclosure provides a carrier device for test analysis, comprising:
the substrate is provided with a through hole penetrating through the substrate along a first direction, and the first direction is perpendicular to the top surface of the substrate;
the supporting layer is positioned on the top surface of the substrate and used for bearing a film layer to be detected, a sample signal generated by the film layer to be detected can pass through the supporting layer and the through hole, and the substrate can shield the sample signal.
In some embodiments, the membrane layer to be measured has a sub-nanometer thickness, and the pore diameter of the through hole is nanometer or micrometer.
In some embodiments, the substrate further has a plurality of openings arranged at intervals along a second direction, the openings extend from the bottom surface of the substrate to the top surface of the substrate, the bottom surface of the substrate and the top surface of the substrate are distributed oppositely along the first direction, and the second direction is parallel to the top surface of the substrate;
the end of the opening facing the supporting layer is provided with a plurality of through holes which are arranged at intervals along the second direction and communicated with the opening.
In some embodiments, the number of the substrates is a plurality, and the plurality of the supporting layers are distributed on the plurality of the substrates one by one;
the substrates are arranged at intervals along the first direction, and the through holes in any two adjacent substrates are aligned along the first direction.
In some embodiments, further comprising:
the carrier box is internally provided with a containing cavity, and a plurality of substrates aligned and arranged along the first direction are positioned in the containing cavity.
According to further embodiments, the present disclosure further provides a method of forming a carrier for test analysis, comprising the steps of:
forming a substrate and a supporting layer positioned on the top surface of the substrate, wherein the supporting layer is used for bearing a film layer to be tested;
and forming a through hole penetrating through the substrate along a first direction in the substrate, wherein a sample signal generated by the film layer to be tested can pass through the supporting layer and the through hole, the substrate can shield the sample signal, and the first direction is perpendicular to the top surface of the substrate.
In some embodiments, the substrate further comprises a bottom surface of the substrate opposite a top surface of the substrate along the first direction; the specific step of forming a through hole penetrating the substrate along a first direction in the substrate comprises the following steps:
and etching the substrate from the bottom surface of the substrate by adopting at least one focusing ion beam etching process to form the through hole with the aperture of nano-scale or micro-scale.
In some embodiments, the specific step of etching the substrate from the bottom surface of the substrate using at least one focused ion beam etching process comprises:
forming an opening in the substrate extending from a bottom surface of the substrate toward a top surface of the substrate;
etching the substrate at the bottom of the opening along the opening by adopting a first focused ion beam etching process to form a first through hole;
and etching the substrate at the bottom of the first through hole along the first through hole by adopting a second poly Jiao Lizi beam etching process to form a second through hole exposing the supporting layer, wherein the aperture of the second through hole is smaller than that of the first through hole, and the first through hole and the second through hole communicated with the first through hole jointly form the through hole.
In some embodiments, the electron microscope magnification of the first focused ion beam etching process is less than the electron microscope magnification of the second focused Jiao Lizi beam etching process, and the etching voltage of the first focused ion beam etching process is greater than the etching voltage of the second focused Jiao Lizi beam etching process.
According to still further embodiments, the present disclosure also provides a test analysis method comprising the steps of:
providing a carrying device for test analysis as described above, wherein the pore diameter of the through hole is nano-scale or micro-scale;
an atomic layer deposition process is adopted to directly grow a film layer to be detected with a sub-nanometer thickness on the surface of the supporting layer;
and transmitting a test signal to the film layer to be tested, and receiving a sample signal generated by the film layer to be tested from the bottom of the through hole, wherein the bottom of the through hole is opposite to the top of the through hole along the first direction, and the top of the through hole faces to the supporting layer.
According to the bearing device for test analysis, the forming method and the test analysis method thereof, provided by some embodiments of the present disclosure, the substrate with the through hole is formed, and the supporting layer for bearing the film layer to be tested is arranged on the surface of the substrate, the sample signal generated by the film layer to be tested can pass through the supporting layer and the through hole, and the substrate can shield the sample signal, so that the sample signal can be received from one side of the through hole away from the supporting layer, thereby realizing test analysis of the film layer to be tested, simplifying operation of test analysis of the film layer to be tested, and improving efficiency of test analysis of the film layer to be tested. In some embodiments of the present disclosure, the aperture of the through hole may be set to be in a micro-scale or a nano-scale, so that test analysis of the film layer to be tested having a sub-nano-scale thickness is enabled, and characterization of the film layer to be tested having a sub-nano-scale thickness is achieved, which provides a reference for improvement of a semiconductor manufacturing process and improvement of a semiconductor manufacturing yield.
Drawings
FIG. 1 is a schematic structural view of a carrying device for test analysis in an embodiment of the present disclosure;
FIG. 2 is an enlarged schematic cross-sectional view of the location of the dashed box in FIG. 1;
FIG. 3 is a schematic top view of the dashed box location of FIG. 1;
FIG. 4 is a schematic bottom view of the dashed box location of FIG. 1;
FIG. 5 is a schematic illustration of the arrangement of a plurality of substrates within a carrier for test analysis in accordance with an embodiment of the present disclosure;
FIGS. 6 a-6 b are schematic structural views of a stage box according to embodiments of the present disclosure;
FIG. 7 is a flow chart of a method of forming a carrier for test analysis in an implementation of the present disclosure;
FIGS. 8-13 are schematic views of the primary process architecture of embodiments of the present disclosure in forming a carrier for test analysis;
fig. 14 is a flow chart of a test analysis method in an embodiment of the present disclosure.
Detailed Description
The following describes in detail a carrying device for test analysis, a forming method thereof, and a specific embodiment of a test analysis method provided in the present disclosure with reference to the accompanying drawings.
The present embodiment provides a carrying device for test analysis, fig. 1 is a schematic structural diagram of the carrying device for test analysis in the embodiment of the present disclosure, fig. 2 is an enlarged schematic sectional view of a position of a dashed frame in fig. 1, fig. 3 is a schematic plan view of the position of the dashed frame in fig. 1, and fig. 4 is a schematic bottom view of the position of the dashed frame in fig. 1. As shown in fig. 1-4, the carrying device for test analysis includes:
a substrate 10 having a through hole 13 penetrating the substrate 10 in a first direction perpendicular to a top surface of the substrate 10;
the supporting layer 11 is located on the top surface of the substrate 10, and is used for carrying a film layer 12 to be tested, a sample signal generated by the film layer 12 to be tested can pass through the supporting layer 11 and the through hole 13, and the substrate 10 can shield the sample signal.
Specifically, the substrate 10 may have a single-layer structure, or may include a plurality of semiconductor layers stacked in the first direction. In an example, to further simplify the structure of the carrying device for test analysis, the substrate 10 is a single-layer structure, and the material of the substrate 10 is silicon. In other examples, the material of the substrate 10 with a single layer structure may be other semiconductor materials, such as gallium nitride, gallium arsenide, gallium carbide, silicon carbide, or SOI. The substrate 10 includes a top surface of the substrate 10 and a bottom surface of the substrate 10 that are relatively distributed along the first direction, and the support layer 11 includes a bottom surface of the support layer 11 and a top surface of the support layer 11 that are relatively distributed along the first direction. In one example, the bottom surface of the support layer 11 directly overlies the top surface of the substrate 10. In an example, the through hole 13 penetrates through the substrate 10 along the first direction, and the through hole 13 exposes the bottom surface of the supporting layer 11, so as to avoid damage to the supporting layer 11, and ensure that the supporting layer 11 can stably support the film layer 12 to be tested formed later. In another example, the through hole 13 penetrates the substrate 10 along the first direction and the through hole 13 extends into the support layer 11, so that the thickness of the support layer 11 at the position corresponding to the through hole 13 can be reduced, thereby reducing the loss of the sample signal and further improving the accuracy and reliability of the film analysis to be measured. In an example, the first direction is the Z-axis direction in fig. 1 and 2.
In the carrying device for testing and analyzing provided in this embodiment, after a test signal (the solid arrow in fig. 1 indicates the transmission direction of the test signal) is transmitted to the film layer 12 to be tested in the process of testing and analyzing the film layer 12 to be tested, the film layer 12 to be tested is excited to generate the sample signal, and after the sample signal (the dotted arrow in fig. 1 indicates the transmission direction of the sample signal) passes through the supporting layer 11 and the through hole 13, the sample signal is emitted out of the substrate 10, and by analyzing the sample signal, the characterization of the film layer 12 to be tested can be achieved. By adopting the carrying device for testing and analyzing provided by the embodiment to test and analyze the film layer 12 to be tested, on one hand, the film layer 12 to be tested can be directly deposited on the surface of the supporting layer 11 (for example, the top surface of the supporting layer 11), so that powder sample preparation or tablet sample preparation of the film layer 12 to be tested is not required, the operation of characterizing the film layer to be tested is simplified, and the efficiency of testing and analyzing the film layer to be tested is improved; on the other hand, the carrying device for testing and analyzing is not limited by the thickness of the film layer 12 to be tested, so that the test and analysis of the film layer 12 to be tested with a thinner thickness (for example, a thickness of sub-nanometer level) can be realized, and references are provided for improving the semiconductor manufacturing process and improving the semiconductor manufacturing yield. The test analysis described in this embodiment may be XRD (X-Ray Diffraction) analysis, EPR (Electron Paramagnetic Resonance ) analysis, raman analysis, EXAFS (Extended X-Ray Absorption Fine Structure ) analysis, or the like.
In some embodiments, the film layer 12 to be measured has a sub-nanometer thickness, and the aperture D2 of the through hole 13 is nanometer or micrometer. For example, when the aperture D2 of the through hole 13 is nano-scale or micro-scale, an atomic layer deposition process or the like may be used to directly deposit the film layer 12 to be measured with a sub-nano-scale thickness on the surface of the supporting layer 11, so as to implement the characterization of the film layer to be measured with a sub-nano-scale thickness. The sub-nanometer thickness in this embodiment refers to a thickness range of less than or equal to 10 nanometers. The nanoscale in this embodiment refers to a range of greater than or equal to 1 nanometer and less than 1 micrometer. The micron scale described in this embodiment means a range of greater than or equal to 1 micron and less than 500 microns.
In other embodiments, the film layer 12 to be measured may also have a thickness of nano-scale or micro-scale, and the pore diameter D2 of the through hole 13 is nano-scale or micro-scale.
In some embodiments, the through hole 13 includes a top portion facing the support layer 11, and a bottom portion opposite the top portion along the first direction;
at least the top of the through hole 13 has a pore diameter of 0.5 μm to 100 μm.
For example, the through hole 13 extends in the first direction, and the aperture of the through hole 13 gradually increases in a direction in which the bottom of the through hole 13 is directed to the top of the through hole 13, at least the end of the through hole 13 in contact with the support layer 11 has an aperture of 0.5 μm to 100 μm. For another example, the through holes 13 extend along the first direction, and the apertures of the through holes 13 are uniformly distributed along the direction in which the bottom of the through holes 13 is directed to the top of the through holes 13, and the apertures of the through holes 13 are 0.5 μm to 100 μm.
In some embodiments, the substrate 10 further has a plurality of openings 14 arranged at intervals along a second direction, the openings 14 extend from a bottom surface of the substrate 10 to a top surface of the substrate 10, the bottom surface of the substrate 10 and the top surface of the substrate 10 are distributed opposite to each other along the first direction, and the second direction is parallel to the top surface of the substrate 10;
the end of the opening 14 facing the support layer 11 has a plurality of through holes 13 arranged at intervals in the second direction and communicating with the opening 14. In one example, the opening 14 has an inner diameter D1 of 0.5cm to 2cm. The shape of the orthographic projection of the opening 14 on the top surface of the substrate 10 may be rectangular, circular or polygonal, so as to adapt to the requirements of different sizes and numbers of the through holes 13.
For example, as shown in fig. 1, 2 and 4, the substrate 10 includes a plurality of openings 14 arranged in an array along the second direction and the third direction, and each of the openings 14 does not penetrate the substrate 10 along the first direction. The end of each of the openings 14 facing the support layer 11 has a plurality of the through holes 13 arrayed in the second direction and the third direction and communicating with the openings. By providing a plurality of openings 14 and a plurality of through holes 13 in the substrate 10, a plurality of areas in the film layer 12 to be tested carried by the supporting layer 11 can be analyzed and characterized, so that the accuracy and reliability of the analysis and test of the film layer 12 to be tested can be further improved. Wherein the third direction is parallel to the top surface of the substrate 10 and the third direction intersects the second direction (e.g., obliquely intersects or perpendicularly intersects). In an example, the second direction may be the X-axis direction in fig. 1-4, and the third direction may be the Y-axis direction in fig. 3-4. In an example, the apertures of the plurality of through holes 13 communicating with the same opening 14 are all equal to further enhance the effect of the test analysis.
Fig. 5 is a schematic illustration of the arrangement of multiple substrates within a carrier for use in test analysis in embodiments of the present disclosure. In some embodiments, as shown in fig. 5, the number of the substrates 10 is plural, and the plurality of the supporting layers 11 are distributed on the plurality of the substrates 10 one by one;
the plurality of substrates 10 are arranged at intervals along the first direction, and the through holes 13 in any adjacent two of the substrates 10 are aligned along the first direction.
Specifically, the carrying device for test analysis includes a plurality of substrates 10, and the supporting layer 11 is disposed on the top surface of each substrate 10. By providing a plurality of the substrates 10, the thin (for example, sub-nanometer thickness) film layers 12 to be tested can be deposited on the surface of the supporting layer 11 on each substrate 10, and in the test analysis process, the plurality of the substrates 10 are arranged at intervals along the first direction, and the plurality of the film layers 12 to be tested are also arranged at intervals along the first direction. Since the through holes 13 in the plurality of substrates 10 are aligned along the first direction, the test signals (the solid arrows in fig. 5 indicate the transmission direction of the test signals) used for performing test analysis on the film layers 12 to be tested can be sequentially transmitted to the film layers 12 to be tested on the surfaces of the plurality of support layers 11 along the first direction, and the sample signals excited in the plurality of film layers 12 to be tested are also transmitted along the plurality of through holes 13 aligned along the first direction, on one hand, the intensity of the total sample signals (i.e., the sum of the sample signals generated by all the film layers 12 to be tested which are arranged at intervals along the first direction) can be increased, so that the problem that the sample signals generated by a single film layer 12 to be tested are too low (for example, lower than the detection lower limit of a sample signal detection analyzer) to accurately characterize the film layers 12 to be tested is avoided, and the detection sensitivity and reliability of the test analysis on the film layers 12 to be tested are improved; on the other hand, the total thickness of the film layer 12 to be tested (the total thickness of the film layer 12 to be tested is the sum of the thicknesses of the film layers 12 to be tested on all the supporting layers 11 arranged at intervals along the first direction) can be controlled by controlling the number of the substrates 10 arranged at intervals along the first direction, so that the analysis and the test of the film layers 12 to be tested with different thicknesses are realized, and the flexibility of the film layer test analysis is improved.
In the process of performing test analysis on the film layer 12 to be tested, the number of the substrates 10 arranged at intervals along the first direction may be 2-10, so that the problem that the sample signal generated by a single film layer 12 to be tested is too low (for example, lower than the detection limit of the sample signal detection analyzer) to accurately characterize the film layer 12 to be tested can be avoided, and the problem that the total sample signal is too high (for example, higher than the detection limit of the sample signal detection analyzer) to be processed can be avoided.
Fig. 6a to 6b are schematic structural views of a stage box according to an embodiment of the present disclosure. In some embodiments, as shown in fig. 6a and 6b, the carrying device for test analysis further comprises:
the stage box 60 has a receiving cavity 62 in the stage box 60, and the substrates 10 aligned along the first direction are located in the receiving cavity.
For example, the stage box 60 includes a main body 63, and at least one baffle 61 (2 baffles 61 are shown in fig. 6 b) detachably connected to the main body 63, the main body 63 having the accommodating chamber 62 therein, the baffles 61 for closing the accommodating chamber 62. After the film layer 12 to be tested is deposited on the supporting layer 11, the baffle 61 and the main body 63 may be separated, and after the substrate 10, together with the supporting layer 11 and the film layer 12 to be tested, is transferred onto the carrying structure in the accommodating cavity 62, the baffle 61 and the main body 63 are connected to seal the accommodating cavity 62, so as to avoid the influence of the external environment on the test analysis of the film layer 12 to be tested.
The substrate 10, the supporting layer 11 on the substrate 10, and the film layer 12 to be tested on the supporting layer 11 are taken as a bearing unit. By stacking a plurality of the carrying units in the first direction within the accommodating chamber 62. In the process of performing test analysis, after the test signals are injected into the accommodating cavity 62, the test signals are sequentially injected into a plurality of carrying units along the first direction, and the sample signals emitted from the accommodating cavity 62 are the sum of the sample signals generated by the film layers 12 to be tested in all carrying units which are arranged at intervals along the first direction, so that the intensity of the total sample signals can be increased.
The material of the stage box 60 should avoid affecting the sample signal and/or the test signal. In an example, the material of the stage box 60 may be the same as the material of the support layer 11, so as to avoid affecting the sample signal or the test signal.
In an example, the top of the stage box 60 has a first opening, and the test signal is directly emitted to the film layer 12 to be tested in the carrying unit through the first opening. In another example, the bottom of the stage box 60 has a second opening through which the sample signal exits the stage box 60. In yet another example, the top of the carrier box 60 has a first opening, and the bottom of the carrier box 60 has a second opening, the test signal is directly emitted to the film layer 12 to be tested in the carrying unit through the first opening, and the sample signal is emitted from the carrier box 60 through the second opening.
In an example, the structure for supporting the carrying unit may not be provided in the stage box 60, and a plurality of the carrying units located in the stage box 60 may be directly stacked in the first direction, thereby simplifying the structure of the stage box 60. In another example, a plurality of support structures may be disposed in the accommodating cavity 62 at intervals along the first direction, so that a plurality of the carrying units deposited with the film layers 12 to be tested can be transferred onto the support structures one by one, so as to ensure that the through holes 13 in the carrying units arranged at intervals along the first direction are aligned along the first direction, and ensure the stability of the carrying units in the carrier box 60.
In some embodiments, the width of the accommodating cavity 62 in the carrier box 60 along at least the second direction is equal to the width of the substrate 10 along the second direction, so that the substrate 10 can be clamped in the accommodating cavity 62 without gaps along at least the second direction, and the through holes 13 in the plurality of carrying units arranged at intervals along the first direction are aligned along the first direction, so that the substrate 10 is prevented from shaking in the carrier box 60, and the test analysis on the film layer 12 to be tested is ensured to be performed smoothly.
The embodiment also provides a forming method of the bearing device for test analysis. Fig. 7 is a flowchart of a method for forming a carrier for test analysis in the embodiment of the present disclosure, and fig. 8 to fig. 13 are schematic process structures of the carrier for test analysis in the embodiment of the present disclosure. The structure of the carrying device for test analysis formed in this embodiment can be seen in fig. 1-5, 6a and 6b. As shown in fig. 1-5, 6 a-6 b and 7-13, the method for forming the carrying device for test analysis includes the following steps:
step S71, forming a substrate 10 and a supporting layer 11 positioned on the top surface of the substrate 10, wherein the supporting layer 11 is used for bearing a film layer 12 to be tested, as shown in FIG. 10;
in step S72, a through hole 13 penetrating the substrate 10 along a first direction is formed in the substrate 10, the sample signal generated by the film layer 12 to be tested can pass through the supporting layer 11 and the through hole 13, and the substrate 10 can shield the sample signal, and the first direction is perpendicular to the top surface of the substrate 10, as shown in fig. 1 and 2.
In some embodiments, the specific steps of forming the substrate 10, and the support layer 11 on the top surface of the substrate 10, include:
providing an initial substrate 80, wherein the initial substrate 80 comprises a first surface S1 and a second surface S2 which are relatively distributed along the first direction, as shown in fig. 8;
forming the support layer 11 on the first surface S1 of the initial substrate 80, as shown in fig. 9;
the initial substrate 80 is thinned from the second surface S2 of the initial substrate 80 to form the substrate 10, as shown in fig. 10.
For example, the initial substrate 80 is a silicon substrate. The initial substrate 80 is alongThe thickness H1 in the first direction may be 750 μm, for example, as shown in fig. 8. The support layer 11 may be deposited on the first surface S1 of the initial substrate 80 using a chemical vapor deposition process, a physical vapor deposition process, or an atomic layer deposition process, as shown in fig. 9. The supporting layer 11 is made of a material with higher hardness so as to support the film layer 12 to be tested later. In some embodiments, the material of the supporting layer 11 may be SiN, siC, siCN, siO 2 Any one or a combination of two or more of them. The thickness of the support layer 11 in the first direction may be 10nm to 200nm. Thereafter, the initial substrate 80 may be thinned from the second surface S2 of the initial substrate 80 by a chemical mechanical polishing process or the like, to form the substrate 10, and the thickness H2 of the substrate 10 in the first direction may be 200 μm to 300 μm, as shown in fig. 10.
In some embodiments, the substrate 10 further includes a bottom surface BS of the substrate 10 opposite the top surface TS of the substrate 10 along the first direction; the specific steps of forming the through hole 13 penetrating the substrate 10 along the first direction in the substrate 10 include:
the substrate 10 is etched from the bottom surface BS of the substrate 10 to form the through holes 13 having a hole diameter of nano-scale or micro-scale.
In some embodiments, the specific step of etching the substrate 10 from the bottom surface BS of the substrate 10 includes:
the substrate 10 is etched from the bottom surface BS of the substrate 10 using at least one focused ion beam etching process.
In some embodiments, the specific step of etching the substrate 10 from the bottom surface BS of the substrate 10 using at least one focused ion beam etching process includes:
forming an opening 14 in the substrate 10 extending from the bottom surface BS of the substrate 10 to the top surface of the substrate 10, as shown in fig. 11;
etching the substrate 10 at the bottom of the opening 14 along the opening 14 by using a first focused ion beam etching process to form a first through hole 110, as shown in fig. 12;
and etching the substrate 10 at the bottom of the first through hole 110 by using a second poly Jiao Lizi beam etching process to form a second through hole 130 exposing the support layer, wherein the aperture of the second through hole 130 is smaller than that of the first through hole 110, and the first through hole 110 and the second through hole 130 communicated with the first through hole 110 together form the through hole 13, as shown in fig. 13, 1 and 2.
In some embodiments, the electron microscope magnification of the first focused ion beam etching process is less than the electron microscope magnification of the second focused Jiao Lizi beam etching process, and the etching voltage of the first focused ion beam etching process is greater than the etching voltage of the second focused Jiao Lizi beam etching process.
For example, after forming the substrate 10, the opening 14 may be formed using an etching process or an automatic grinding machine punching process, and the opening 14 does not penetrate the substrate 10 in the first direction, as shown in fig. 11. The width of the opening 14 in the second direction (i.e., the inner diameter D1 of the opening 14) may be 0.5cm to 2cm. The thickness H3 of the substrate 10 remaining at the bottom of the opening 14 in the first direction is 10 μm to 100 μm. Thereafter, a first focused ion beam etching process is used to etch the substrate 10 along the opening 14 at the bottom of the opening 14, forming a first via 110, as shown in fig. 12. The aperture D3 of the first through hole 110 is 100-500 μm. The first through hole 110 does not penetrate the substrate 10 along the first direction. In one example, the thickness H4 of the substrate 10 remaining at the bottom of the first through hole 110 along the first direction is 1 μm to 30 μm. In the first focused ion beam etching process, etching parameters may be set to a small electron microscope magnification (i.e., a large field of view) and a high etching voltage (e.g., 30 kv) to perform rough etching on the substrate 10 at the bottom of the opening 14, so as to improve the formation efficiency of the through hole 13. Next, the substrate 10 at the bottom of the first via hole 110 is etched along the first via hole 110 using a second poly Jiao Lizi beam etching process, to form a second via hole 130 exposing the support layer, as shown in fig. 13. In the second poly Jiao Lizi beam etching process, etching parameters can be set to a large electron microscope power (i.e., a small field of view) and a low etching voltage (e.g., 0.5kv to 5 kv) to finely etch the substrate 10 at the bottom of the opening 14. By forming the through hole 13 by using a first focused ion beam etching process and the second focused ion beam etching process, on the one hand, the feature size of the through hole 13 can be controlled more precisely; on the other hand, damage to the substrate 10 can also be reduced.
In other embodiments, the through hole may be formed by using a focused ion beam etching process or more than three focused ion beam etching processes, so as to meet the requirements of test analysis on the film layers to be tested with different thicknesses or the requirements of different types of test analysis.
The present embodiment also provides a test analysis method, and fig. 14 is a flowchart of the test analysis method in the embodiment of the present disclosure. As shown in fig. 14, the test analysis method includes the steps of:
step S141, providing the bearing device for test analysis as shown in FIGS. 1-5, 6a, 6b and 13, wherein the aperture of the through hole 13 is nano-scale or micro-scale;
step S142, an atomic layer deposition process is adopted to directly grow a film layer 12 to be measured with a sub-nanometer thickness on the surface of the supporting layer 11, as shown in fig. 1;
in step S143, a test signal is transmitted to the film layer 12 to be tested, and a sample signal generated by the film layer 12 to be tested is received from the bottom of the through hole 13, wherein the bottom of the through hole 13 is opposite to the top of the through hole 13 along the first direction, and the top of the through hole 13 faces the supporting layer 11, as shown in fig. 1 and 5.
For example, after forming a plurality of openings 14 and a plurality of through holes 13 in the substrate 10 to obtain the structure shown in fig. 4, the substrate 10 and the supporting layer 11 are cut, the size of the substrate 10 is adjusted to the centimeter level, and the substrate of the centimeter level obtained after cutting and the supporting layer 11 above the substrate are used together as a carrier sheet. The slide includes at least one of the openings 14 therein. In one example, the slide has a side length of 0.5cm to 2cm. And then, the atomic layer deposition process can be adopted to directly grow the film layer 12 to be tested with the sub-nano-scale thickness on the surface of the sub-support layer in the carrier sheet, and a tabletting sample preparation or powder sample preparation process is not required, so that the test analysis operation of the film layer 12 to be tested is simplified. Thereafter, the slide on which the film layer 12 to be measured is formed is transferred into the accommodating chamber 62 of the stage box 60 as shown in fig. 6a and 6b. After the baffle 61 is adopted to seal the accommodating cavity 62 of the carrier box 60, a test signal is transmitted to the film layer 12 to be tested, and a sample signal generated by the film layer 12 to be tested is received from the bottom of the through hole 13, so that the film layer 12 to be tested is characterized.
According to the carrying device for test analysis, the forming method of the carrying device and the test analysis method, provided by some embodiments of the present invention, by forming the substrate with the through hole, and setting the film layer to be tested on the surface of the substrate, the sample signal generated by the film layer to be tested can pass through the supporting layer and the through hole, and the substrate can shield the sample signal, so that the sample signal can be received from one side of the through hole away from the supporting layer, thereby realizing test analysis of the film layer to be tested, simplifying operation of test analysis of the film layer to be tested, and improving efficiency of test analysis of the film layer to be tested. In some embodiments of the present disclosure, the aperture of the through hole may be set to be in a micro-scale or a nano-scale, so that the test analysis of the film layer to be tested having a sub-nano-scale thickness is enabled, the characterization of the film layer to be tested having a sub-nano-scale thickness is achieved, and a reference is provided for improvement of a semiconductor manufacturing process and improvement of a semiconductor manufacturing yield.
The foregoing is merely a preferred embodiment of the present disclosure, and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present disclosure, which are intended to be comprehended within the scope of the present disclosure.

Claims (10)

1. A carrier for test analysis, comprising:
the substrate is provided with a through hole penetrating through the substrate along a first direction, and the first direction is perpendicular to the top surface of the substrate;
the supporting layer is positioned on the top surface of the substrate and used for bearing a film layer to be detected, a sample signal generated by the film layer to be detected can pass through the supporting layer and the through hole, and the substrate can shield the sample signal.
2. The carrier for test analysis according to claim 1, wherein the film layer to be tested has a sub-nanometer thickness, and the aperture of the through hole is nanometer or micrometer.
3. The carrier for test analysis of claim 1, wherein the substrate further has a plurality of openings therein spaced apart along a second direction, the openings extending from a bottom surface of the substrate toward a top surface of the substrate, the bottom surface of the substrate being opposite the top surface of the substrate along the first direction, the second direction being parallel to the top surface of the substrate;
the end of the opening facing the supporting layer is provided with a plurality of through holes which are arranged at intervals along the second direction and communicated with the opening.
4. The carrier for testing analysis according to claim 1, wherein the number of the substrates is plural, and the plurality of the supporting layers are distributed on the plurality of the substrates one by one;
the substrates are arranged at intervals along the first direction, and the through holes in any two adjacent substrates are aligned along the first direction.
5. The carrier for test analysis of claim 4, further comprising:
the carrier box is internally provided with a containing cavity, and a plurality of substrates aligned and arranged along the first direction are positioned in the containing cavity.
6. A method of forming a carrier for test analysis, comprising the steps of:
forming a substrate and a supporting layer positioned on the top surface of the substrate, wherein the supporting layer is used for bearing a film layer to be tested;
and forming a through hole penetrating through the substrate along a first direction in the substrate, wherein a sample signal generated by the film layer to be tested can pass through the supporting layer and the through hole, the substrate can shield the sample signal, and the first direction is perpendicular to the top surface of the substrate.
7. The method of forming a carrier for test analysis of claim 6, wherein the substrate further comprises a bottom surface of the substrate opposite a top surface of the substrate along the first direction; the specific step of forming a through hole penetrating the substrate along a first direction in the substrate comprises the following steps: and etching the substrate from the bottom surface of the substrate by adopting at least one focusing ion beam etching process to form the through hole with the aperture of nano-scale or micro-scale.
8. The method of claim 7, wherein etching the substrate from the bottom surface of the substrate using at least one focused ion beam etching process comprises:
forming an opening in the substrate extending from a bottom surface of the substrate toward a top surface of the substrate;
etching the substrate at the bottom of the opening along the opening by adopting a first focused ion beam etching process to form a first through hole;
and etching the substrate at the bottom of the first through hole along the first through hole by adopting a second poly Jiao Lizi beam etching process to form a second through hole exposing the supporting layer, wherein the aperture of the second through hole is smaller than that of the first through hole, and the first through hole and the second through hole communicated with the first through hole jointly form the through hole.
9. The method of claim 8, wherein the electron microscope magnification of the first focused ion beam etching process is smaller than the electron microscope magnification of the second focused Jiao Lizi beam etching process, and the etching voltage of the first focused ion beam etching process is greater than the etching voltage of the second focused Jiao Lizi beam etching process.
10. A method of testing and analyzing comprising the steps of:
providing a carrier for test analysis according to claim 1, wherein the pore diameter of the through hole is nano-scale or micro-scale;
an atomic layer deposition process is adopted to directly grow a film layer to be detected with a sub-nanometer thickness on the surface of the supporting layer;
and transmitting a test signal to the film layer to be tested, and receiving a sample signal generated by the film layer to be tested from the bottom of the through hole, wherein the bottom of the through hole is opposite to the top of the through hole along the first direction, and the top of the through hole faces to the supporting layer.
CN202310386004.7A 2023-04-07 2023-04-07 Bearing device for test analysis, forming method thereof and test analysis method Pending CN116429805A (en)

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CN202310386004.7A CN116429805A (en) 2023-04-07 2023-04-07 Bearing device for test analysis, forming method thereof and test analysis method

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