CN116564712A - Chip electrolytic capacitor and preparation method thereof - Google Patents
Chip electrolytic capacitor and preparation method thereof Download PDFInfo
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- CN116564712A CN116564712A CN202310827142.4A CN202310827142A CN116564712A CN 116564712 A CN116564712 A CN 116564712A CN 202310827142 A CN202310827142 A CN 202310827142A CN 116564712 A CN116564712 A CN 116564712A
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- electrolytic capacitor
- silicon dioxide
- aluminum foil
- chip
- parts
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- 239000003990 capacitor Substances 0.000 title claims abstract description 80
- 238000002360 preparation method Methods 0.000 title claims abstract description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 59
- 239000003792 electrolyte Substances 0.000 claims abstract description 35
- 239000013538 functional additive Substances 0.000 claims abstract description 23
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 17
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 14
- 229920000767 polyaniline Polymers 0.000 claims abstract description 11
- 125000000542 sulfonic acid group Chemical group 0.000 claims abstract description 10
- 239000005543 nano-size silicon particle Substances 0.000 claims abstract description 9
- 230000000694 effects Effects 0.000 claims abstract description 7
- 238000011065 in-situ storage Methods 0.000 claims abstract description 4
- 238000006116 polymerization reaction Methods 0.000 claims abstract description 4
- 239000006087 Silane Coupling Agent Substances 0.000 claims abstract description 3
- 125000002490 anilino group Chemical group [H]N(*)C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 claims abstract description 3
- 239000002994 raw material Substances 0.000 claims abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 62
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 62
- 239000011888 foil Substances 0.000 claims description 48
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 42
- 238000007789 sealing Methods 0.000 claims description 32
- 238000003756 stirring Methods 0.000 claims description 31
- 238000001816 cooling Methods 0.000 claims description 24
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 claims description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- 230000032683 aging Effects 0.000 claims description 14
- 239000003795 chemical substances by application Substances 0.000 claims description 11
- 239000007788 liquid Substances 0.000 claims description 11
- 239000008367 deionised water Substances 0.000 claims description 9
- 229910021641 deionized water Inorganic materials 0.000 claims description 9
- 238000001035 drying Methods 0.000 claims description 9
- 238000005406 washing Methods 0.000 claims description 9
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims description 8
- 238000005520 cutting process Methods 0.000 claims description 8
- 230000007547 defect Effects 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000009957 hemming Methods 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 238000010030 laminating Methods 0.000 claims description 8
- 238000001132 ultrasonic dispersion Methods 0.000 claims description 8
- 238000004804 winding Methods 0.000 claims description 8
- 238000001914 filtration Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 238000002156 mixing Methods 0.000 claims description 7
- BTJIUGUIPKRLHP-UHFFFAOYSA-N 4-nitrophenol Chemical compound OC1=CC=C([N+]([O-])=O)C=C1 BTJIUGUIPKRLHP-UHFFFAOYSA-N 0.000 claims description 6
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 claims description 6
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 6
- 239000004327 boric acid Substances 0.000 claims description 6
- BDJRBEYXGGNYIS-UHFFFAOYSA-N nonanedioic acid Chemical compound OC(=O)CCCCCCCC(O)=O BDJRBEYXGGNYIS-UHFFFAOYSA-N 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 6
- 239000000600 sorbitol Substances 0.000 claims description 6
- FBPFZTCFMRRESA-KVTDHHQDSA-N D-Mannitol Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-KVTDHHQDSA-N 0.000 claims description 5
- 229930195725 Mannitol Natural products 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 239000000594 mannitol Substances 0.000 claims description 5
- 235000010355 mannitol Nutrition 0.000 claims description 5
- 229910052708 sodium Inorganic materials 0.000 claims description 5
- 239000011734 sodium Substances 0.000 claims description 5
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 claims description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 4
- 229910001870 ammonium persulfate Inorganic materials 0.000 claims description 4
- IUZSEJJESGRFMH-UHFFFAOYSA-N azane;decanedioic acid Chemical compound N.OC(=O)CCCCCCCCC(O)=O IUZSEJJESGRFMH-UHFFFAOYSA-N 0.000 claims description 4
- 239000011259 mixed solution Substances 0.000 claims description 4
- OBFQBDOLCADBTP-UHFFFAOYSA-N aminosilicon Chemical compound [Si]N OBFQBDOLCADBTP-UHFFFAOYSA-N 0.000 claims description 3
- 239000006185 dispersion Substances 0.000 claims description 3
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 claims description 3
- KWIPUXXIFQQMKN-UHFFFAOYSA-N 2-azaniumyl-3-(4-cyanophenyl)propanoate Chemical compound OC(=O)C(N)CC1=CC=C(C#N)C=C1 KWIPUXXIFQQMKN-UHFFFAOYSA-N 0.000 claims description 2
- SLAMLWHELXOEJZ-UHFFFAOYSA-N 2-nitrobenzoic acid Chemical compound OC(=O)C1=CC=CC=C1[N+]([O-])=O SLAMLWHELXOEJZ-UHFFFAOYSA-N 0.000 claims description 2
- JKTYGPATCNUWKN-UHFFFAOYSA-N 4-nitrobenzyl alcohol Chemical compound OCC1=CC=C([N+]([O-])=O)C=C1 JKTYGPATCNUWKN-UHFFFAOYSA-N 0.000 claims description 2
- GVNWZKBFMFUVNX-UHFFFAOYSA-N Adipamide Chemical compound NC(=O)CCCCC(N)=O GVNWZKBFMFUVNX-UHFFFAOYSA-N 0.000 claims description 2
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 claims description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 2
- 229940090948 ammonium benzoate Drugs 0.000 claims description 2
- WACWIRNKOXHQHR-UHFFFAOYSA-N azanium 7-hydroxy-7-oxoheptanoate Chemical compound [NH4+].OC(=O)CCCCCC([O-])=O WACWIRNKOXHQHR-UHFFFAOYSA-N 0.000 claims description 2
- AGVBUFRTWKTYON-UHFFFAOYSA-N azanium;12-hydroxy-12-oxododecanoate Chemical compound N.OC(=O)CCCCCCCCCCC(O)=O AGVBUFRTWKTYON-UHFFFAOYSA-N 0.000 claims description 2
- RATMLZHGSYTFBL-UHFFFAOYSA-N azanium;6-hydroxy-6-oxohexanoate Chemical compound N.OC(=O)CCCCC(O)=O RATMLZHGSYTFBL-UHFFFAOYSA-N 0.000 claims description 2
- 230000002431 foraging effect Effects 0.000 claims description 2
- 150000002431 hydrogen Chemical class 0.000 claims description 2
- 239000002245 particle Substances 0.000 claims description 2
- 229920000058 polyacrylate Polymers 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 9
- 239000008151 electrolyte solution Substances 0.000 claims 1
- 235000019441 ethanol Nutrition 0.000 claims 1
- 239000005871 repellent Substances 0.000 claims 1
- 239000002105 nanoparticle Substances 0.000 abstract 1
- FLDCSPABIQBYKP-UHFFFAOYSA-N 5-chloro-1,2-dimethylbenzimidazole Chemical compound ClC1=CC=C2N(C)C(C)=NC2=C1 FLDCSPABIQBYKP-UHFFFAOYSA-N 0.000 description 8
- 239000001741 Ammonium adipate Substances 0.000 description 8
- 235000019293 ammonium adipate Nutrition 0.000 description 8
- VJCJAQSLASCYAW-UHFFFAOYSA-N azane;dodecanoic acid Chemical compound [NH4+].CCCCCCCCCCCC([O-])=O VJCJAQSLASCYAW-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 7
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 125000003277 amino group Chemical group 0.000 description 4
- 238000002329 infrared spectrum Methods 0.000 description 4
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 229940067597 azelate Drugs 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- -1 nitrogen-containing amine Chemical class 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 1
- OTLNPYWUJOZPPA-UHFFFAOYSA-N 4-nitrobenzoic acid Chemical compound OC(=O)C1=CC=C([N+]([O-])=O)C=C1 OTLNPYWUJOZPPA-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 238000004176 ammonification Methods 0.000 description 1
- 239000010407 anodic oxide Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
- H01G2/12—Protection against corrosion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/022—Electrolytes; Absorbents
- H01G9/035—Liquid electrolytes, e.g. impregnating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/145—Liquid electrolytic capacitors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/13—Energy storage using capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Manufacturing & Machinery (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
The invention relates to the technical field of electrolytic capacitors, and discloses a chip electrolytic capacitor and a preparation method thereof, wherein electrolyte for the chip electrolytic capacitor comprises the following raw materials: the invention modifies silicon dioxide through silane coupling agent, then utilizes electrostatic effect, sequentially adsorbs sulfonic acid group and aniline group on the surface of modified silicon dioxide, prepares functional additive through in-situ polymerization and polyaniline on the surface of nano silicon dioxide, improves high temperature resistance and self-repairing performance of electrolyte, reduces current leakage of electrolytic capacitor, protects electrolytic capacitor by improving sparking voltage of electrolyte through nano particles, prolongs service life of electrolytic capacitor, and brings remarkable economic effect.
Description
Technical Field
The invention relates to the technical field of electrolytic capacitors, in particular to a chip electrolytic capacitor and a preparation method thereof.
Background
Electrolytic capacitors are capacitors which are formed by generating a thin layer oxide on the surfaces of metals such as aluminum, tantalum, niobium, titanium and the like by adopting an anodic oxidation method as a dielectric medium and taking the thin layer oxide as a cathode, wherein the capacitor is used as a basic electronic element, a layer of non-conductive insulating material is added between two adjacent conductors, and under the condition of externally applied voltage, the capacitor can play a role in storing charges, and the traditional capacitor is widely applied to electronic circuits and plays roles in isolating direct-current alternating-current, filtering, decoupling, tuning loops, energy conversion and the like. With the pursuit of various industrial fields for product weight reduction, aluminum electrolytic capacitors are widely applied to the fields of electronic toys, household appliances, switch lighting, communication equipment and the like due to the characteristics of excellent capacitance per unit volume, small volume, light weight and low price, the electronic industry is rapidly developed nowadays, the requirements on the electrolytic capacitors are also higher and higher, the aluminum electrolytic capacitors are one of the most widely applied capacitors, the improvement research on the aluminum electrolytic capacitors is an indispensible work target of people at night, and the electrolyte is the most core content in the capacitors, so that the improvement on the aluminum electrolytic capacitors is the most studied direction at present.
In addition to higher conductivity, the aluminum electrolytic capacitor needs to have the performance of withstanding higher instantaneous voltage and current impact when applied to electronic equipment such as routers, chargers and servers, so that the aluminum electrolytic capacitor needs to have high sparking voltage, and meanwhile, in order to prolong the service life of the aluminum electrolytic capacitor, economic effects are brought, the repairability of electrolyte is improved, and the leakage current performance is reduced. The patent with publication number CN113593908B discloses an aluminum electrolytic capacitor electrolyte, a preparation method thereof and an aluminum electrolytic capacitor, wherein in the aluminum electrolytic capacitor, nitrogen-containing amine or amide corrosion inhibitors are added in the preparation process of the electrolyte, the adsorption effect among polar groups is utilized to change the charge state and interface property of the metal surface, a layer of protective film can be formed on the molecular surface of a nonpolar group to improve the corrosion resistance of the working electrolyte, the service life of the electrolytic capacitor is further prolonged, but the electrolytic capacitor is slightly deficient in leakage current and spark voltage improving performance.
Disclosure of Invention
The invention aims to provide a chip electrolytic capacitor, which solves the following technical problems: (1) the problem of low sparking voltage of the aluminum electrolytic capacitor. (2) The problem of poor repairability of the leakage current of the aluminum electrolytic capacitor. (3) The aluminum electrolytic capacitor has low conductivity when in use.
The aim of the invention can be achieved by the following technical scheme:
a preparation method of a chip electrolytic capacitor comprises the following preparation steps:
cutting an anode aluminum foil, first electrolytic paper, a cathode aluminum foil and second electrolytic paper into specified widths according to requirements, riveting an anode guide pin with the anode aluminum foil, and sequentially tiling, laminating and winding the anode aluminum foil, the first electrolytic paper, the cathode aluminum foil and the second electrolytic paper into cores after riveting the cathode guide pin with the cathode aluminum foil;
step two, circularly pressurizing and impregnating the core for 4 to 8 times under the pressure of 0.25 to 0.45MPa to enable the electrolyte to be fully adsorbed on the core;
removing liquid from the impregnated core, sealing by using a rubber plug, performing girdling and hemming sealing, then externally connecting a power supply for aging, repairing oxide film defects in the capacitor, and obtaining the chip electrolytic capacitor after aging is completed;
in the second step, the electrolyte comprises the following raw materials in parts by weight: 70-100 parts of solvent, 15-30 parts of solute, 2-6 parts of waterproof agent, 1-2 parts of hydrogen eliminating agent and 2-5 parts of functional additive;
the functional additive is prepared by modifying silicon dioxide through a silane coupling agent, sequentially adsorbing sulfonic acid groups and aniline groups on the surface of the modified silicon dioxide by utilizing the electrostatic effect, and then modifying polyaniline on the surface of nano silicon dioxide through in-situ polymerization.
Further, the preparation method of the electrolyte comprises the following steps: heating the solvent to 130-150 ℃ in weight parts, preserving heat for 10-20min, uniformly stirring, cooling to 115-120 ℃, adding the solute in weight parts, fully stirring to dissolve, sealing, preserving heat for 45-60min, cooling to 90-100 ℃, adding the waterproof agent, the hydrogen eliminating agent and the functional additive in weight parts, sealing, and cooling to room temperature to obtain the electrolyte for the chip electrolytic capacitor.
Further, the solvent is any one or more of ethylene glycol, gamma-butyrolactone and glycerol; the solute is any one or more of adipic acid ammonium, pimelic acid ammonium, azelaic acid hydrogen ammonium, sebacic acid ammonium, dodecanedioic acid ammonium and boric acid.
Further, the waterproof mixture is any one or more of phosphoric acid, hypophosphorous acid, mannitol, polyacrylate, adipamide and sorbitol.
Further, the hydrogen eliminating agent is one or more of nitrobenzoic acid, p-nitrophenol, p-nitrobenzyl alcohol, ammonium benzoate and mannitol.
Further, the functional additive comprises the following preparation steps:
s1: adding KH550 into absolute ethyl alcohol and deionized water, stirring, fully mixing, adding nano silicon dioxide, continuously stirring, fully mixing, standing for 2-4h, washing, and drying to obtain amino silicon dioxide;
s2: adding 1-naphthol-3, 6-sodium disulfonate into deionized water, performing ultrasonic dispersion for 1-2 hours to obtain a dispersion liquid, adding aminated silicon dioxide, continuously performing ultrasonic dispersion for 0.5-1 hour, stirring for 2-6 hours, adding aniline, stirring for 1-5 hours, and then filtering, washing and drying to obtain modified silicon dioxide;
s3: adding modified silicon dioxide into deionized water, performing ultrasonic dispersion for 1-2h, adding aniline, dropwise adding a mixed solution of ammonium persulfate and hydrochloric acid, stirring for 3-5h, performing ice bath reaction, filtering, washing and drying to obtain the functional additive.
According to the technical scheme, KH550 is utilized to modify nano-silica, amino is introduced to the surface of the nano-silica, the amino is positively charged in an aqueous solution, 1-naphthol-3, 6-sodium disulfonate is adsorbed on the surface of the silica by utilizing the electrostatic adsorption effect between the positively charged amino and the negatively charged sulfonic acid group, aniline is positively charged in the aqueous solution and can be adsorbed on the sulfonic acid group on the surface of the silica, under the acidic condition, the aniline undergoes in-situ polymerization reaction through initiation of ammonium persulfate, and finally polyaniline with the sulfonic acid group is formed on the surface of the nano-silica, so that the functional additive is obtained.
Further, the particle size of the nano silicon dioxide is 20-200nm.
Further, in the step S3, the ice bath reaction temperature is 0-5 ℃ and the time is 12-24 hours.
A chip electrolytic capacitor is prepared by the preparation method.
The invention has the beneficial effects that:
according to the invention, the nano silicon dioxide is used as a matrix, the surface of the silicon dioxide subjected to ammonification generates positively charged amino groups, so that the positively charged amino groups can be better electrostatically adsorbed with sulfonic acid groups in the sodium 1-naphthol-3, 6-disulfonate, the positive amino groups and the sulfonic acid groups are tightly combined, after aniline is added, the sulfonic acid groups on azo can enter aniline molecules to promote the azo to crystallize to form polyaniline, the polyaniline has excellent high temperature resistance and stability, the high temperature resistance of the electrolyte can be improved in a high temperature environment generated by the operation of an electrolytic capacitor, meanwhile, the surface-modified silicon dioxide can be adsorbed in holes of an anodic oxide film, the contact of water or other substances to the alumina film can be prevented, the sparking voltage of the electrolyte can be effectively improved, the protective effect on the electrolytic capacitor is achieved, the leakage current of the electrolytic capacitor is reduced, the restoration capacity of the electrolyte can be improved after the sulfonic acid groups are combined with polyaniline, the dissolution performance of the polyaniline is improved, the high temperature resistance of the electrolyte is remarkably improved, and the corrosion resistance of the electrolyte can be further reduced, and the corrosion rate of the electrolyte can be remarkably reduced after the electrolyte is combined with the alumina film is further reduced, and the corrosion rate of the electrolyte can be further reduced.
Of course, it is not necessary for any one product to practice the invention to achieve all of the advantages set forth above at the same time.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed for the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is an infrared spectrum of the aminated silica, modified silica and functional additive of example 1 of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1
A preparation method of a chip electrolytic capacitor comprises the following steps:
step one, heating 70 parts of ethylene glycol to 130 ℃, preserving heat for 10min, uniformly stirring, cooling to 115 ℃, and adding 15 parts of ethylene glycol with a mass ratio of 4:3, fully stirring boric acid and ammonium azelate until the boric acid and the ammonium azelate are dissolved, sealing and preserving heat for 45min, cooling to 90 ℃, adding 2 parts of adipoyl diamine, 1 part of p-nitrobenzoic acid and 2 parts of functional additives, sealing, and cooling to room temperature to obtain electrolyte;
cutting the anode aluminum foil, the first electrolytic paper, the cathode aluminum foil and the second electrolytic paper into specified widths according to requirements, riveting an anode guide pin with the anode aluminum foil, and sequentially tiling, laminating and winding the anode aluminum foil, the first electrolytic paper, the cathode aluminum foil and the second electrolytic paper into cores after riveting the cathode guide pin with the cathode aluminum foil;
step three, pressurizing and impregnating the core for 4 times under the pressure of 0.25MPa, so that the electrolyte prepared in the step 1 is fully adsorbed on the core;
and fourthly, removing liquid from the impregnated core, sealing by using a rubber plug, performing girdling and hemming sealing, then conducting aging by using an external power supply, repairing oxide film defects in the capacitor, and obtaining the chip electrolytic capacitor after the aging is completed.
The preparation method of the functional additive comprises the following preparation steps:
s1: adding 3g of KH550 into 25ml of absolute ethyl alcohol and 5ml of deionized water, stirring, fully mixing, adding 2g of silicon dioxide, continuously stirring until fully mixing, standing for 2h, washing and drying to obtain amino silicon dioxide;
s2: adding 0.5g of 1-naphthol-3, 6-sodium disulfonate into 40ml of deionized water, performing ultrasonic dispersion for 1h to obtain a dispersion liquid, adding 2g of aminated silicon dioxide, continuously performing ultrasonic dispersion for 0.5h, adding 0.2ml of aniline, stirring for 1h, filtering, washing and drying to obtain modified silicon dioxide;
s3: mixing and stirring 0.06g of ammonium persulfate and 8ml of hydrochloric acid with the concentration of 1mol/L to form a mixed solution for standby, adding 2g of modified silicon dioxide into 50ml of deionized water, ultrasonically dispersing for 1h, adding 0.3ml of aniline, dropwise adding all the mixed solution, stirring for 3h, reacting for 12h in an ice bath environment at the temperature of 0 ℃, filtering, washing and drying to obtain the functional additive.
Characterization of the aminated silica, modified silica and functional additives using FTIR920 Fourier transform IR spectrometer, results are shown in FIG. 1, as can be seen from FIG. 1, in the IR spectrum of the aminated silica, 3450cm -1 Is an absorption peak of amino group, 1190cm in the infrared spectrum of the modified silicon dioxide -1 、1070cm -1 、622cm -1 、531cm -1 The absorption peaks appearing respectively are-SO 3 Characteristic peak of H at 748cm -1 、1085cm -1 The absorption peak appearing at the place is the characteristic peak of naphthol, at 1650cm -1 The N-H absorption peak of primary amine appears at 1085cm -1 C-N bond absorption peak appears at the position, and 1558cm of functional additive is in infrared spectrum -1 Is characterized by an absorption peak of C=N in polyaniline of 1296cm -1 Is characterized by C-N absorption peak in polyaniline of 1465cm -1 The position is a skeleton vibration peak of C=C in benzene ring, 790cm -1 The C-H bending vibration peak of benzene ring is shown.
Example 2
A preparation method of a chip electrolytic capacitor comprises the following steps:
step one, heating 80 parts of ethylene glycol to 140 ℃, preserving heat for 15min, uniformly stirring, cooling to 117 ℃, and adding 20 parts of ethylene glycol with a mass ratio of 4:3, fully stirring the ammonium dodecanoate and the ammonium adipate until the ammonium dodecanoate and the ammonium adipate are dissolved, sealing and preserving heat for 50min, cooling to 95 ℃, adding 4 parts of sorbitol, 1 part of p-nitrophenol and 3 parts of functional additives, sealing, and cooling to room temperature to obtain electrolyte;
cutting the anode aluminum foil, the first electrolytic paper, the cathode aluminum foil and the second electrolytic paper into specified widths according to requirements, riveting an anode guide pin with the anode aluminum foil, and sequentially tiling, laminating and winding the anode aluminum foil, the first electrolytic paper, the cathode aluminum foil and the second electrolytic paper into cores after riveting the cathode guide pin with the cathode aluminum foil;
step three, pressurizing and impregnating the core for 6 times under the pressure of 0.35MPa, so that the electrolyte prepared in the step 1 is fully adsorbed on the core;
and fourthly, removing liquid from the impregnated core, sealing by using a rubber plug, performing girdling and hemming sealing, then conducting aging by using an external power supply, repairing oxide film defects in the capacitor, and obtaining the chip electrolytic capacitor after the aging is completed.
Wherein the preparation method of the functional additive is the same as in example 1.
Example 3
A preparation method of a chip electrolytic capacitor comprises the following steps:
step one, heating 100 parts of ethylene glycol to 150 ℃, preserving heat for 20min, uniformly stirring, cooling to 120 ℃, and adding 30 parts of ethylene glycol with a mass ratio of 4:3, fully stirring boric acid and ammonium sebacate until the boric acid and the ammonium sebacate are dissolved, sealing and preserving heat for 50min, cooling to 95 ℃, adding 6 parts of hypophosphorous acid, 2 parts of mannitol and 5 parts of functional additives, sealing, and cooling to room temperature to obtain electrolyte;
cutting the anode aluminum foil, the first electrolytic paper, the cathode aluminum foil and the second electrolytic paper into specified widths according to requirements, riveting an anode guide pin with the anode aluminum foil, and sequentially tiling, laminating and winding the anode aluminum foil, the first electrolytic paper, the cathode aluminum foil and the second electrolytic paper into cores after riveting the cathode guide pin with the cathode aluminum foil;
step three, pressurizing and impregnating the core for 8 times under the pressure of 0.45MPa, so that the electrolyte prepared in the step 1 is fully adsorbed on the core;
and fourthly, removing liquid from the impregnated core, sealing by using a rubber plug, performing girdling and hemming sealing, then conducting aging by using an external power supply, repairing oxide film defects in the capacitor, and obtaining the chip electrolytic capacitor after the aging is completed.
Wherein the preparation method of the functional additive is the same as in example 1.
Comparative example 1
A preparation method of a chip electrolytic capacitor comprises the following steps:
step one, heating 80 parts of ethylene glycol to 140 ℃, preserving heat for 15min, uniformly stirring, cooling to 117 ℃, and adding 20 parts of ethylene glycol with a mass ratio of 4:3, fully stirring the ammonium dodecanoate and the ammonium adipate until the ammonium dodecanoate and the ammonium adipate are dissolved, sealing and preserving heat for 50min, cooling to 95 ℃, adding 4 parts of sorbitol and 1 part of p-nitrophenol, sealing and cooling to room temperature to obtain electrolyte;
cutting the anode aluminum foil, the first electrolytic paper, the cathode aluminum foil and the second electrolytic paper into specified widths according to requirements, riveting an anode guide pin with the anode aluminum foil, and sequentially tiling, laminating and winding the anode aluminum foil, the first electrolytic paper, the cathode aluminum foil and the second electrolytic paper into cores after riveting the cathode guide pin with the cathode aluminum foil;
step three, pressurizing and impregnating the core for 6 times under the pressure of 0.35MPa, so that the electrolyte prepared in the step 1 is fully adsorbed on the core;
and fourthly, removing liquid from the impregnated core, sealing by using a rubber plug, performing girdling and hemming sealing, then conducting aging by using an external power supply, repairing oxide film defects in the capacitor, and obtaining the chip electrolytic capacitor after the aging is completed.
Comparative example 2
A preparation method of a chip electrolytic capacitor comprises the following steps:
step one, heating 80 parts of ethylene glycol to 140 ℃, preserving heat for 15min, uniformly stirring, cooling to 117 ℃, and adding 20 parts of ethylene glycol with a mass ratio of 4:3, fully stirring the ammonium dodecanoate and the ammonium adipate until the ammonium dodecanoate and the ammonium adipate are dissolved, sealing and preserving heat for 50min, cooling to 95 ℃, adding 4 parts of sorbitol, 1 part of p-nitrophenol and 3 parts of nano silicon dioxide, sealing, and cooling to room temperature to obtain electrolyte;
cutting the anode aluminum foil, the first electrolytic paper, the cathode aluminum foil and the second electrolytic paper into specified widths according to requirements, riveting an anode guide pin with the anode aluminum foil, and sequentially tiling, laminating and winding the anode aluminum foil, the first electrolytic paper, the cathode aluminum foil and the second electrolytic paper into cores after riveting the cathode guide pin with the cathode aluminum foil;
step three, pressurizing and impregnating the core for 6 times under the pressure of 0.35MPa, so that the electrolyte prepared in the step 1 is fully adsorbed on the core;
and fourthly, removing liquid from the impregnated core, sealing by using a rubber plug, performing girdling and hemming sealing, then conducting aging by using an external power supply, repairing oxide film defects in the capacitor, and obtaining the chip electrolytic capacitor after the aging is completed.
Comparative example 3
A preparation method of a chip electrolytic capacitor comprises the following steps:
step one, heating 80 parts of ethylene glycol to 140 ℃, preserving heat for 15min, uniformly stirring, cooling to 117 ℃, and adding 20 parts of ethylene glycol with a mass ratio of 4:3, fully stirring the ammonium dodecanoate and the ammonium adipate until the ammonium dodecanoate and the ammonium adipate are dissolved, sealing and preserving heat for 50min, cooling to 95 ℃, adding 4 parts of sorbitol, 1 part of p-nitrophenol and 3 parts of polyaniline, sealing, and cooling to room temperature to obtain electrolyte;
cutting the anode aluminum foil, the first electrolytic paper, the cathode aluminum foil and the second electrolytic paper into specified widths according to requirements, riveting an anode guide pin with the anode aluminum foil, and sequentially tiling, laminating and winding the anode aluminum foil, the first electrolytic paper, the cathode aluminum foil and the second electrolytic paper into cores after riveting the cathode guide pin with the cathode aluminum foil;
step three, pressurizing and impregnating the core for 6 times under the pressure of 0.35MPa, so that the electrolyte prepared in the step 1 is fully adsorbed on the core;
and fourthly, removing liquid from the impregnated core, sealing by using a rubber plug, performing girdling and hemming sealing, then conducting aging by using an external power supply, repairing oxide film defects in the capacitor, and obtaining the chip electrolytic capacitor after the aging is completed.
Performance detection
The electrolytic capacitors prepared in examples 1 to 3 and comparative examples 1 to 3 were used as samples, and the samples were initially tested for sparking voltage, conductivity and leakage current properties using a TV-1CH type intelligent TV tester and tested for values after 3000 hours of loading of the samples at 130℃as shown in the following table:
，
as can be seen from the above table, the electrolytic capacitors prepared in examples 1 to 3 have excellent low leakage current performance, flash fire high voltage resistance and excellent conductivity, and after a long time of high temperature load, the various data are not changed much, which means that the electrolytic capacitor prepared in comparative example 1 has excellent high temperature resistance, compared with the electrolytic capacitor prepared in example, no functional additive is added, so that the various properties are at a poor level, the electrolytic capacitor prepared in comparative example 2 is compared with the electrolytic capacitor prepared in example, nano silicon dioxide is directly used as an additive, and it can be seen that the electrolytic capacitor prepared in comparative example 2 has high flash fire voltage, but the conductivity and low leakage current performance are not high, various data change is large after a long time of high temperature load operation, the high temperature resistance performance is not good, and the high temperature resistance performance is high compared with the electrolytic capacitor prepared in comparative example 3, although the flash fire voltage, low leakage current and the high temperature resistance performance is not great.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
The foregoing is merely illustrative and explanatory of the principles of the invention, as various modifications and additions may be made to the specific embodiments described, or similar alternatives may be made by those skilled in the art, without departing from the principles of the invention or beyond the scope of the appended claims.
Claims (9)
1. The preparation method of the chip electrolytic capacitor is characterized by comprising the following preparation steps:
cutting an anode aluminum foil, first electrolytic paper, a cathode aluminum foil and second electrolytic paper into specified widths according to requirements, riveting an anode guide pin with the anode aluminum foil, and sequentially tiling, laminating and winding the anode aluminum foil, the first electrolytic paper, the cathode aluminum foil and the second electrolytic paper into cores after riveting the cathode guide pin with the cathode aluminum foil;
step two, circularly pressurizing and impregnating the core for 4 to 8 times under the pressure of 0.25 to 0.45MPa to enable the electrolyte to be fully adsorbed on the core;
removing liquid from the impregnated core, sealing by using a rubber plug, performing girdling and hemming sealing, then externally connecting a power supply for aging, repairing oxide film defects in the capacitor, and obtaining the chip electrolytic capacitor after aging is completed;
in the second step, the electrolyte comprises the following raw materials in parts by weight: 70-100 parts of solvent, 15-30 parts of solute, 2-6 parts of waterproof agent, 1-2 parts of hydrogen eliminating agent and 2-5 parts of functional additive;
the functional additive is prepared by modifying silicon dioxide through a silane coupling agent, sequentially adsorbing sulfonic acid groups and aniline groups on the surface of the modified silicon dioxide by utilizing the electrostatic effect, and then modifying polyaniline on the surface of nano silicon dioxide through in-situ polymerization.
2. The method for manufacturing a chip electrolytic capacitor according to claim 1, wherein the method for manufacturing the electrolytic solution is as follows: heating the solvent to 130-150 ℃ in weight parts, preserving heat for 10-20min, uniformly stirring, cooling to 115-120 ℃, adding the solute in weight parts, fully stirring to dissolve, sealing, preserving heat for 45-60min, cooling to 90-100 ℃, adding the waterproof agent, the hydrogen eliminating agent and the functional additive in weight parts, sealing, and cooling to room temperature to obtain the electrolyte for the chip electrolytic capacitor.
3. The method for manufacturing a chip electrolytic capacitor according to claim 2, wherein the solvent is any one or more of ethylene glycol, γ -butyrolactone, glycerol; the solute is any one or more of adipic acid ammonium, pimelic acid ammonium, azelaic acid hydrogen ammonium, sebacic acid ammonium, dodecanedioic acid ammonium and boric acid.
4. The method for producing a chip electrolytic capacitor according to claim 2, wherein the water-repellent agent is one or more of phosphoric acid, hypophosphorous acid, mannitol, polyacrylate alcohol, adipamide, and sorbitol.
5. The method for manufacturing a chip electrolytic capacitor according to claim 2, wherein the hydrogen removing agent is any one or more of nitrobenzoic acid, p-nitrophenol, p-nitrobenzyl alcohol, ammonium benzoate, mannitol.
6. The method for manufacturing a chip electrolytic capacitor according to claim 2, wherein the functional additive comprises the steps of:
s1: adding KH550 into absolute ethyl alcohol and deionized water, stirring, fully mixing, adding nano silicon dioxide, continuously stirring, fully mixing, standing for 2-4h, washing, and drying to obtain amino silicon dioxide;
s2: adding 1-naphthol-3, 6-sodium disulfonate into deionized water, performing ultrasonic dispersion for 1-2 hours to obtain a dispersion liquid, adding aminated silicon dioxide, continuously performing ultrasonic dispersion for 0.5-1 hour, stirring for 2-6 hours, adding aniline, stirring for 1-5 hours, and then filtering, washing and drying to obtain modified silicon dioxide;
s3: adding modified silicon dioxide into deionized water, performing ultrasonic dispersion for 1-2h, adding aniline, dropwise adding a mixed solution of ammonium persulfate and hydrochloric acid, stirring for 3-5h, performing ice bath reaction, filtering, washing and drying to obtain the functional additive.
7. The method for manufacturing a chip electrolytic capacitor as claimed in claim 6, wherein the nano silica has a particle size of 20 to 200nm.
8. The method of manufacturing a chip electrolytic capacitor as claimed in claim 6, wherein in the step S3, the ice bath reaction temperature is 0 to 5 ℃ for 12 to 24 hours.
9. A chip electrolytic capacitor produced by the production method according to any one of claims 1 to 8.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2008034257A (en) * | 2006-07-28 | 2008-02-14 | Sanyo Chem Ind Ltd | Electrolytic solution and electrochemical element |
| CN102129913A (en) * | 2010-12-27 | 2011-07-20 | 东莞宏强电子有限公司 | Preparation method of sheet type aluminum electrolytic capacitor |
| CN105957638A (en) * | 2016-05-05 | 2016-09-21 | 国网江西省电力科学研究院 | Conductive nanometer silica preparation method |
| CN111627708A (en) * | 2020-07-03 | 2020-09-04 | 常州华威电子有限公司 | Conductive high-molecular polymer electrolytic capacitor and preparation method thereof |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008034257A (en) * | 2006-07-28 | 2008-02-14 | Sanyo Chem Ind Ltd | Electrolytic solution and electrochemical element |
| CN102129913A (en) * | 2010-12-27 | 2011-07-20 | 东莞宏强电子有限公司 | Preparation method of sheet type aluminum electrolytic capacitor |
| CN105957638A (en) * | 2016-05-05 | 2016-09-21 | 国网江西省电力科学研究院 | Conductive nanometer silica preparation method |
| CN111627708A (en) * | 2020-07-03 | 2020-09-04 | 常州华威电子有限公司 | Conductive high-molecular polymer electrolytic capacitor and preparation method thereof |
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