CN116555893A - Shoulder placing control method and device, electronic equipment and storage medium - Google Patents
Shoulder placing control method and device, electronic equipment and storage medium Download PDFInfo
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- CN116555893A CN116555893A CN202210103880.XA CN202210103880A CN116555893A CN 116555893 A CN116555893 A CN 116555893A CN 202210103880 A CN202210103880 A CN 202210103880A CN 116555893 A CN116555893 A CN 116555893A
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- 238000000034 method Methods 0.000 title claims abstract description 360
- 238000003860 storage Methods 0.000 title claims abstract description 10
- 238000001816 cooling Methods 0.000 claims abstract description 405
- 230000008569 process Effects 0.000 claims abstract description 304
- 239000013078 crystal Substances 0.000 claims description 29
- 238000004891 communication Methods 0.000 claims description 14
- 238000004364 calculation method Methods 0.000 claims description 12
- 238000004590 computer program Methods 0.000 claims description 11
- 239000000155 melt Substances 0.000 abstract description 41
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 34
- 239000001301 oxygen Substances 0.000 abstract description 34
- 229910052760 oxygen Inorganic materials 0.000 abstract description 34
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 31
- 238000004090 dissolution Methods 0.000 abstract description 22
- 239000012535 impurity Substances 0.000 abstract description 10
- 238000002360 preparation method Methods 0.000 abstract description 8
- 230000011218 segmentation Effects 0.000 description 11
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 8
- 238000006073 displacement reaction Methods 0.000 description 7
- 230000009467 reduction Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000004069 differentiation Effects 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 125000004430 oxygen atom Chemical group O* 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 239000013643 reference control Substances 0.000 description 2
- 238000002231 Czochralski process Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 238000013083 solar photovoltaic technology Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management
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- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
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- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention provides a shouldering control method and device, electronic equipment and a storage medium, and relates to the technical field of solar photovoltaics. The method comprises the steps of adjusting the cooling amount of a shoulder transferring process and an equal diameter process in the preparation of the Czochralski monocrystalline silicon to a shoulder placing process, obtaining a target cooling amount, lifting the shoulder placing cooling slope in the shoulder placing process according to the target cooling amount, completing cooling control of the target cooling amount in the shoulder placing process according to the adjusted shoulder placing cooling slope, at the moment, lifting the cooling amount in the shoulder placing process, realizing the cooling targets of the shoulder transferring process and the equal diameter process in advance, and effectively reducing the melt temperature in the shoulder placing process, the shoulder transferring process and the equal diameter process, so that crucible dissolution can be reduced, the dissolution amount of oxygen impurities in the melt can be reduced, and the oxygen content of the finished monocrystalline silicon can be reduced.
Description
Technical Field
The present invention relates to the field of solar photovoltaic technologies, and in particular, to a shouldering control method and apparatus, an electronic device, and a storage medium.
Background
The Czochralski method is a main process method for producing and manufacturing monocrystalline silicon, and comprises the process stages of seeding, shouldering, constant diameter and the like, wherein the oxygen content is increased in the shouldering stage and the shouldering stage due to the change of a gas path, a volatilization area and the like, so that the oxygen impurity content in a finished product of the monocrystalline silicon is high, and the quality of the finished product of the monocrystalline silicon is influenced.
Disclosure of Invention
The invention provides a shouldering control method, a shouldering control device, electronic equipment and a storage medium, which aim to reduce the oxygen impurity content of a finished product of monocrystalline silicon prepared by a Czochralski method, thereby improving the quality of the finished product of the monocrystalline silicon.
In a first aspect, an embodiment of the present invention provides a method for controlling shoulder release, where the method may include:
adjusting the cooling amount in the shoulder rotating process and the constant diameter process to the shoulder placing process, and obtaining a target cooling amount;
lifting the shoulder placing cooling slope in the shoulder placing process according to the target cooling amount;
and performing cooling control in the shouldering process according to the lifted shouldering cooling slope.
Optionally, the step of increasing the shoulder-placing cooling slope in the shoulder-placing process according to the target cooling amount includes:
acquiring a cooling preposition parameter according to the target cooling amount, wherein the cooling preposition parameter represents an adjustment range of the shoulder-placing cooling slope;
and lifting the shoulder-placing cooling slope according to the cooling preposed parameter and the target cooling quantity.
Optionally, after the shoulder-placing cooling slope in the shoulder-placing process is raised according to the target cooling amount, the method further includes:
the pulling speed of the single crystal in the shouldering process is improved according to the target cooling quantity;
The cooling control is carried out in the shoulder placing process according to the lifted shoulder placing cooling slope, and the method comprises the following steps:
and at the increased pulling speed of the single crystal, performing cooling control in the shouldering process according to the lifted shouldering cooling slope.
Optionally, after the shoulder-placing cooling slope in the shoulder-placing process is raised according to the target cooling amount, the method further includes:
adjusting the shouldering shoulder shape in the shouldering process according to the lifted shouldering cooling slope, wherein the shouldering shoulder shape comprises at least one of shouldering length and shouldering diameter;
setting corresponding control coefficients for the adjusted shoulder-placing type segments, wherein the control coefficients comprise at least one of a proportional coefficient, an integral coefficient and a differential coefficient;
the cooling control is carried out in the shoulder placing process according to the lifted shoulder placing cooling slope, and the method comprises the following steps:
and adopting the control coefficient to realize cooling control in the shouldering process according to the lifted shouldering cooling slope.
Optionally, the shouldering length is the shouldering length, the control coefficients are a proportional coefficient, an integral coefficient and a differential coefficient, and the setting of the adjusted shouldering section with the corresponding control coefficients includes:
In the case that the shoulder length is less than or equal to 40mm, the proportional coefficient is 5, the integral coefficient is 0, and the differential coefficient is 1000;
in the case that the shoulder length is equal to 60mm, the proportional coefficient is 4, the integral coefficient is 0.02, and the differential coefficient is 1000;
in the case that the shoulder length is greater than or equal to 80mm, the proportionality coefficient is 3, the integral coefficient is 0.05, and the differential coefficient is 800;
under the condition that the shouldering length is larger than 40mm and smaller than 60mm, determining a control coefficient corresponding to the shouldering length based on a control coefficient corresponding to the shouldering length of 40mm and a control coefficient corresponding to the shouldering length of 60mm according to a preset calculation rule;
and under the condition that the shouldering length is more than 60mm and less than 80mm, determining the control coefficient corresponding to the shouldering length based on the control coefficient corresponding to the shouldering length of 60mm and the control coefficient corresponding to the shouldering length of 80mm according to a preset calculation rule.
Optionally, the adjusting the cooling amount of the shoulder turning process and the constant diameter process to the shoulder placing process to obtain the target cooling amount includes:
acquiring initial shoulder-placing cooling amount in the shoulder-placing process, and setting the initial shoulder-rotating cooling amount in the shoulder-rotating process and the initial constant-diameter cooling amount in the constant-diameter process to be zero;
And accumulating the initial shouldering cooling quantity, the initial shoulder rotating cooling quantity and the initial constant diameter cooling quantity to obtain the target cooling quantity.
Optionally, the cooling prepositive parameter is 0-5.5KW.
In a second aspect, an embodiment of the present invention provides a shoulder rest control device, which may include:
the cooling quantity prepositive module is used for adjusting the cooling quantity in the shoulder rotating process and the constant diameter process to the shoulder placing process to obtain a target cooling quantity;
the cooling slope adjustment module is used for improving the shoulder-placing cooling slope in the shoulder-placing process according to the target cooling quantity;
and the shoulder placing cooling control module is used for carrying out cooling control in the shoulder placing process according to the lifted shoulder placing cooling slope.
Optionally, the cooling slope adjustment module includes:
the adjustment parameter acquisition sub-module is used for acquiring a cooling preposition parameter according to the target cooling amount, wherein the cooling preposition parameter represents the adjustment range of the shouldering cooling slope;
and the early-stage slope adjustment sub-module is used for improving the shoulder-placing cooling slope according to the cooling preposed parameter and the target cooling amount.
Optionally, the apparatus further comprises:
the pulling speed adjusting module is used for improving the pulling speed of the single crystal in the shouldering process according to the target cooling quantity;
The shouldering cooling control module is specifically used for carrying out cooling control in the shouldering process according to the lifted shouldering cooling slope at the increased single crystal pulling speed.
Optionally, the apparatus further comprises:
the shoulder adjusting module is used for adjusting the shoulder shape in the shoulder placing process according to the lifted shoulder placing cooling slope, and the shoulder placing shape comprises at least one of a shoulder placing length and a shoulder placing diameter;
the control coefficient module is used for setting corresponding control coefficients for the adjusted shoulder-type subsection, and the control coefficients comprise at least one of a proportional coefficient, an integral coefficient and a differential coefficient;
the shoulder placing cooling control module is specifically used for realizing cooling control in the shoulder placing process by adopting the control coefficient according to the lifted shoulder placing cooling slope.
Optionally, the control coefficient module includes:
the first segmentation submodule is used for enabling the proportion coefficient to be 5, the integral coefficient to be 0 and the differential coefficient to be 1000 when the shouldering length is smaller than or equal to 40 mm;
a second segmentation submodule, configured to, in a case where the shoulder length is equal to 60mm, obtain a scaling factor of 4, an integration factor of 0.02, and a differentiation factor of 1000;
A third segmentation submodule, configured to, in a case where the shoulder length is greater than or equal to 80mm, obtain a scaling factor of 3, obtain an integration factor of 0.05, and obtain a differentiation factor of 800;
a fourth segmentation submodule, configured to determine, according to a preset calculation rule, a control coefficient corresponding to the shouldering length based on a control coefficient corresponding to the shouldering length of 40mm and a control coefficient corresponding to the shouldering length of 60mm when the shouldering length is greater than 40mm and less than 60 mm;
and the fifth segmentation submodule is used for determining the control coefficient corresponding to the shouldering length based on the control coefficient corresponding to the shouldering length of 60mm and the control coefficient corresponding to the shouldering length of 80mm according to a preset calculation rule under the condition that the shouldering length is more than 60mm and less than 80 mm.
Optionally, the cooling quantity pre-module includes:
an initial cooling amount obtaining sub-module, configured to obtain an initial shoulder cooling amount in the shoulder process, an initial shoulder cooling amount in the shoulder rotating process, and an initial constant diameter cooling amount in the constant diameter process, and set an actual cooling amount in the shoulder rotating process and the constant diameter process to zero;
and the equal-diameter shoulder-turning cooling quantity pre-arranged sub-module is used for accumulating the initial shoulder-turning cooling quantity, the initial shoulder-turning cooling quantity and the initial equal-diameter cooling quantity to obtain the target cooling quantity.
Optionally, the cooling prepositive parameter is 0-5.5KW.
In a third aspect of the present invention, there is further provided an electronic device, including a processor, a communication interface, a memory, and a communication bus, where the processor, the communication interface, and the memory complete communication with each other through the communication bus;
the memory is used for storing a computer program;
the processor is configured to implement the aforementioned shouldering control method when executing the computer program stored in the memory.
In a fourth aspect of the present invention, there is also provided a computer readable storage medium having a computer program stored therein, which when run on a computer causes the computer to implement any one of the above-described shoulder displacement control methods.
In a fifth aspect of the invention there is also provided a computer program product containing instructions which, when run on a computer, cause the computer to implement any of the above described shouldering control methods.
In the implementation of the invention, the cooling amount of the shoulder transferring process and the equal diameter process in the preparation of the Czochralski monocrystalline silicon is adjusted to the shoulder placing process, the target cooling amount is obtained, the shoulder placing cooling slope in the shoulder placing process is improved according to the target cooling amount, so that the cooling control of the target cooling amount is completed in the shoulder placing process according to the adjusted shoulder placing cooling slope, at the moment, the cooling amount in the shoulder placing process is improved, the cooling targets in the shoulder transferring process and the equal diameter process are realized in advance, the melt temperatures in the shoulder placing process, the shoulder transferring process and the equal diameter process can be effectively reduced, the crucible dissolution can be reduced, the dissolution amount of oxygen impurities in the melt can be reduced, and the oxygen content of the finished monocrystalline silicon can be reduced.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the description of the embodiments of the present invention will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 shows one of the step flowcharts of the shouldering control method provided by the embodiment of the invention;
FIG. 2 is a second flowchart illustrating a step of the shouldering control method according to the embodiment of the present invention;
FIG. 3 is a third flowchart illustrating a step of the shouldering control method according to the embodiment of the present invention;
FIG. 4 shows a fourth flowchart of the steps of the shouldering control method according to the embodiment of the invention;
FIG. 5 shows a flowchart of a specific example of a shouldering control method according to an embodiment of the present invention;
fig. 6 shows a schematic diagram of a shoulder-displacement adjustment front-back curve provided by an embodiment of the present invention;
fig. 7 shows a block diagram of a shoulder release control device according to an embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the process of preparing monocrystalline silicon by Czochralski method, the oxygen content of the monocrystalline silicon is mainly influenced by factors such as crucible dissolution, oxygen volatilization, melt convection, segregation and the like, wherein silicon monoxide generated by the action of the melt and the crucible enters the melt, part of the silicon monoxide reaches the surface of the melt through the melt convection and escapes in the form of oxygen volatilization, part of the silicon is dissolved in the melt and finally exists in the monocrystalline silicon in the form of oxygen atoms, the concentration of the oxygen atoms dissolved in the melt through the crucible is related to the liquid temperature of the melt, the liquid temperature of the melt is reduced, and the dissolution concentration of the oxygen atoms in the melt can be reduced. However, in the existing Czochralski process, in the processes of shouldering, shouldering and the like, the liquid temperature of the melt, particularly the temperature of the contact surface of the crucible and the melt, is higher, so that the crucible dissolution amount is more, the oxygen content in the monocrystalline silicon is higher, and the quality is poorer.
Referring to fig. 1, fig. 1 shows one of the step flowcharts of the shouldering control method provided by the embodiment of the invention, and the method may include:
and 101, adjusting the cooling amount in the shoulder rotating process and the constant diameter process to the shoulder placing process, and obtaining the target cooling amount.
In the embodiment of the invention, the corresponding cooling amount is needed to be realized in the processes of the shouldering process, the shoulder rotating process, the constant diameter process and the like in the conventional process, so that the improvement is carried out on the basis of adapting to the temperature requirement in the process, the cooling amount of the shoulder rotating process and the constant diameter process is adjusted to the cooling amount in the shouldering process, so that the target cooling amount in the shouldering process meets the cooling amount of the shouldering process, the shoulder rotating process and the constant diameter process in the conventional process, and the temperature of the melt in the shouldering process, the shoulder rotating process and the constant diameter process is lower than that in the conventional process, thereby effectively reducing the crucible dissolution and reducing the oxygen content of monocrystalline silicon.
Step 102, lifting the shoulder-placing cooling slope in the shoulder-placing process according to the target cooling amount.
In the embodiment of the invention, the shoulder-placing cooling slope can represent the cooling speed in the shoulder-placing process, and after the cooling amount in the shoulder-placing process is adjusted to the target cooling amount, the shoulder-placing cooling slope in the shoulder-placing process can be adjusted according to the target cooling amount so as to improve the cooling speed and the cooling amount in the shoulder-placing process, thereby realizing the target cooling amount. Optionally, the cooling in the shoulder placing process can be divided into a plurality of stages, the same or different cooling slopes of the shoulder placing can be selected in different stages so as to adjust the cooling speed, cooling amount and the like of different stages, and the cooling slope is suitable for the process characteristics of different stages, for example, the cooling effect on the flat shoulder in the shoulder placing process is small, especially when the flat shoulder is adopted, in the later stage of shoulder placing, therefore, the larger cooling slope can be set in the later stage of shoulder placing so as to improve the cooling rate, the cooling amount and the like, and a person skilled in the art can adjust the cooling rate of the shoulder placing based on the target cooling amount according to specific process conditions, production requirements and the like.
And 103, performing cooling control in the shouldering process according to the lifted shouldering cooling slope.
In the embodiment of the invention, the lifted shouldering cooling slope can be adopted, the target cooling quantity is gradually realized according to the corresponding speed reduction speed so as to carry out cooling control in the shouldering process, and the target cooling quantity is obtained by prepositioning the cooling quantity in the shouldering process and the equal diameter process in the subsequent process, so that the target cooling quantity realized based on the lifted shouldering cooling slope in the shouldering process reduces the temperature of the melt in the shouldering process, further reduces the temperature of the melt in the shouldering process and the equal diameter process in the subsequent process, thereby reducing crucible dissolution and reducing the oxygen content dissolved in the melt.
In the implementation of the invention, the cooling amount of the shoulder transferring process and the equal diameter process in the preparation of the Czochralski monocrystalline silicon is adjusted to the shoulder placing process, the target cooling amount is obtained, the shoulder placing cooling slope in the shoulder placing process is improved according to the target cooling amount, so that the cooling control of the target cooling amount is completed in the shoulder placing process according to the adjusted shoulder placing cooling slope, at the moment, the cooling amount in the shoulder placing process is improved, the cooling targets in the shoulder transferring process and the equal diameter process are realized in advance, the melt temperatures in the shoulder placing process, the shoulder transferring process and the equal diameter process can be effectively reduced, the crucible dissolution can be reduced, the dissolution amount of oxygen impurities in the melt can be reduced, and the oxygen content of the finished monocrystalline silicon can be reduced.
Referring to fig. 2, fig. 2 shows a second step flowchart of a shouldering control method according to an embodiment of the present invention, where the method may include:
step 201, obtaining an initial shoulder-placing cooling amount in the shoulder-placing process, wherein the initial shoulder-rotating cooling amount in the shoulder-rotating process and the initial constant-diameter cooling amount in the constant-diameter process are obtained, and the actual cooling amounts in the shoulder-rotating process and the constant-diameter process are set to be zero.
In the embodiment of the invention, the initial cooling amount can be the cooling amount set at different stages in the conventional process, for example, the cooling amount in the shoulder placing process in the conventional process is the initial shoulder placing cooling amount, the cooling amount in the shoulder rotating process in the conventional process is the shoulder rotating cooling amount, the cooling amount in the middle diameter process in the conventional process is the initial constant diameter cooling amount, the initial cooling amounts at different stages can be different according to different working conditions, single crystal silicon production requirements and the like in the conventional process, and when the target cooling amount is obtained, the initial cooling amounts at different stages in the conventional process can be respectively obtained to determine the cooling amounts required to be realized at different stages.
In the embodiment of the invention, the cooling amount of the shoulder turning process and the constant diameter process is adjusted to be in the shoulder placing process, so that the shoulder turning process and the constant diameter process do not need to be cooled any further, and after the initial shoulder turning cooling amount of the shoulder turning process and the initial constant diameter cooling amount of the constant diameter process are determined, the actual cooling amount of the shoulder turning process is set to be zero, and the actual cooling amount of the constant diameter process is set to be zero, thereby realizing that the shoulder turning process and the constant diameter process do not cool, and the shoulder placing process cools. Alternatively, the initial shoulder-turning cooling amount in the shoulder-turning process may be obtained separately, the actual cooling amount in the shoulder-turning process may be set to zero, the initial constant-diameter cooling amount in the constant-diameter process may be obtained, the actual cooling amount in the constant-diameter process may be set to zero, the initial shoulder-turning cooling amount in the shoulder-turning process and the initial constant-diameter cooling amount in the constant-diameter process may be obtained first, and the actual cooling amounts in the shoulder-turning process and the constant-diameter process may be set to zero.
And 202, accumulating the initial shouldering cooling quantity, the initial shoulder rotating cooling quantity and the initial constant diameter cooling quantity to obtain the target cooling quantity.
In the embodiment of the invention, the target cooling amount can be obtained by accumulating the initial shouldering cooling amount, the initial shoulder rotating cooling amount and the initial constant diameter cooling amount, so that the target cooling amount comprises the initial cooling amounts of the shouldering process, the shoulder rotating process and the constant diameter process set in the conventional process. It can be seen that the shouldering process in the implementation of the invention realizes the target cooling amount, so that the temperature of the melt in the shouldering process is reduced more, and the temperature of the melt in the shouldering process and the constant diameter process reaches the cooling requirement of the process without further cooling, thereby being lower than the temperature of the melt in the corresponding process in the conventional process, reducing the dissolution of the crucible and further reducing the oxygen content in the monocrystalline silicon.
Step 203, acquiring a cooling preposed parameter according to the target cooling amount, wherein the cooling preposed parameter represents an adjustment range of the shoulder-placing cooling slope.
In the embodiment of the invention, the cooling pre-set parameters can be the adjustment range of the shouldering cooling slope, optionally, according to the parameters regulated and controlled in the cooling control, the cooling pre-set parameters can be the cooling speed lifting range, the temperature reducing amount range, the power reducing amount range and the like at different stages in the shouldering process, and the cooling pre-set parameters of the shouldering cooling slope can be different according to different target cooling amounts, so that the suitable range of the shouldering cooling slope is adjusted under the condition of ensuring normal process, and the target cooling amount is realized in the shouldering process.
Optionally, the cooling prepositive parameter is 0-5.5KW.
In the embodiment of the invention, when the process temperature is adjusted through power adjustment, the cooling preposed parameter can be 0-5.5KW, the shouldering cooling slope can be improved within the range of 0-5.5KW, so that the cooling amount is improved to the target cooling amount in the shouldering process, and the specific adjustment amount can be any value between 0-5.5KW, such as 0KW, 0.1KW, 0.5KW, 1KW, 2KW, 3KW, 4KW, 5KW, 5.5KW and the like.
Step 204, lifting the shoulder-placing cooling slope according to the cooling preposed parameter and the target cooling amount.
In the embodiment of the invention, the shoulder-placing cooling slope can be adjusted according to the cooling pre-set parameters and the target cooling amount, so that the cooling control of the target cooling amount can be realized in the shoulder-placing process by the shoulder-placing cooling slope, and the cooling speed, the temperature reduction amount or the power reduction amount and the like of at least one stage in the cooling control can be improved according to the cooling pre-set parameters, so that the cooling speed, the temperature reduction amount or the power reduction amount and the like of the stage in the cooling control implemented by the invention are larger than those of the conventional process, and the total cooling amount in the shoulder-placing process is improved to reach the target cooling amount.
In the embodiment of the invention, the cooling process is usually carried out in stages in different shouldering processes, and the shouldering cooling amounts in different stages can be the same or different according to specific process conditions and process requirements, so that the shouldering cooling slopes in different stages can be the same or different, the shouldering cooling slopes can be adjusted in an adjustment range according to cooling preposed parameters, and the specific adjustment amount in each stage can be the same or different from other stages in the adjustment range, so that the whole actual cooling amount in the shouldering process can achieve the target cooling amount under the condition of adapting to process characteristics.
For example, when the temperature change has a great influence on the growth of the single crystal in the shouldering process under the condition that the temperature-reducing pre-parameter is 0-5.5KW, a small adjustment amount, such as 0.7KW, can be selected according to the temperature-reducing pre-parameter; when the temperature change has less influence on the growth of the single crystal, larger adjustment quantity can be selected according to the pre-cooling parameters, such as 2.6KW, 3KW and 5.5KW.
Step 205, performing cooling control in the shoulder placing process according to the lifted shoulder placing cooling slope.
In the embodiment of the present invention, step 205 may correspond to the description of step 103, and is not repeated here.
In the implementation of the invention, the cooling amount of the shoulder transferring process and the equal diameter process in the preparation of the Czochralski monocrystalline silicon is adjusted to the shoulder placing process, the target cooling amount is obtained, the shoulder placing cooling slope in the shoulder placing process is improved according to the target cooling amount, so that the cooling control of the target cooling amount is completed in the shoulder placing process according to the adjusted shoulder placing cooling slope, at the moment, the cooling amount in the shoulder placing process is improved, the cooling targets in the shoulder transferring process and the equal diameter process are realized in advance, the melt temperatures in the shoulder placing process, the shoulder transferring process and the equal diameter process can be effectively reduced, the crucible dissolution can be reduced, the dissolution amount of oxygen impurities in the melt can be reduced, and the oxygen content of the finished monocrystalline silicon can be reduced.
Referring to fig. 3, fig. 3 shows a third step flowchart of a shoulder release control method according to an embodiment of the present invention, where the method may include:
step 301, adjusting the cooling amount in the shoulder rotating process and the constant diameter process to the shoulder placing process, and obtaining the target cooling amount.
Step 302, lifting the shoulder-placing cooling slope in the shoulder-placing process according to the target cooling amount.
In the embodiment of the present invention, the steps 301 to 302 may be referred to the above description of the steps 101 to 102 or the steps 201 to 204, and are not repeated here.
Step 303, adjusting the shouldering type in the shouldering process according to the lifted shouldering cooling slope, wherein the shouldering type comprises at least one of shouldering length and shouldering diameter.
In the embodiment of the invention, based on the adjustment of the shouldering slope, the shouldering slope in the shouldering process can be further adjusted to adapt to the actual condition of crystal growth, alternatively, the shouldering slope can be the shouldering length, the shouldering diameter and the like, and the increase of the shouldering length and the shouldering diameter can be adjusted according to the improvement of the shouldering slope.
Step 304, setting corresponding control coefficients for the adjusted shoulder-type segments, wherein the control coefficients comprise at least one of a proportional coefficient, an integral coefficient and a differential coefficient.
In the embodiment of the invention, because the crystal growth rates in different periods are different and have larger difference in the shouldering process, different control coefficients can be set in different periods, the problem that a single-section control coefficient cannot adapt to the crystal growth rates in different periods in the shouldering process is avoided, the control accuracy and stability are improved, optionally, the adjusted shouldering type can be adopted for segmentation to distinguish different periods in the shouldering process, and the control coefficients corresponding to the segments are set to realize accurate and stable control in different periods, wherein the control coefficients can comprise a proportional coefficient (P), an integral coefficient (I), a differential coefficient (D) and the like, the segments can correspond to fixed control coefficients and also correspond to a reference control coefficient, and can be dynamically adjusted in the segments on the basis of the reference control coefficient according to the real-time shouldering type.
Optionally, the shoulder length is the shoulder length, and the control coefficients are a proportional coefficient, an integral coefficient, and a differential coefficient, and the step 304 includes:
and S11, under the condition that the shouldering length is smaller than or equal to 40mm, the proportional coefficient is 5, the integral coefficient is 0, and the differential coefficient is 1000.
Step S12, under the condition that the shouldering length is equal to 60mm, the proportional coefficient is 4, the integral coefficient is 0.02, and the differential coefficient is 1000.
And S13, under the condition that the shoulder length is greater than or equal to 80mm, the proportional coefficient is 3, the integral coefficient is 0.05, and the differential coefficient is 800.
And S14, under the condition that the shouldering length is more than 40mm and less than 60mm, determining the control coefficient corresponding to the shouldering length based on the control coefficient corresponding to the shouldering length of 40mm and the control coefficient corresponding to the shouldering length of 60mm according to a preset calculation rule.
And S15, under the condition that the shouldering length is more than 60mm and less than 80mm, determining the control coefficient corresponding to the shouldering length based on the control coefficient corresponding to the shouldering length of 60mm and the control coefficient corresponding to the shouldering length of 80mm according to a preset calculation rule.
In the embodiment of the invention, the corresponding control coefficient can be set for the shoulder length section, for example, the shoulder length can be divided into four sections according to three endpoints of 40mm, 60mm and 80mm, wherein when the shoulder length is smaller than or equal to 40mm, the control coefficient with the proportional coefficient of 5, the integral coefficient of 0 and the differential coefficient of 1000 is adopted; when the shoulder length is equal to 60mm, adopting a control coefficient with a proportional coefficient of 4, an integral coefficient of 0.02 and a differential coefficient of 1000; when the shoulder length is greater than or equal to 80mm, a control coefficient with a proportional coefficient of 3, an integral coefficient of 0.05 and a differential coefficient of 800 is adopted.
Further, when the shouldering length is greater than 40mm and less than 60mm, or the shouldering length is greater than 60mm and less than 80mm, the control coefficients corresponding to the shouldering length can be calculated based on the two end points of the range where the shouldering length is located and the control coefficients corresponding to the two end points respectively according to a preset calculation rule, the control coefficients of the end points can be adjusted according to the control coefficient slope between the two end points and the difference between the shouldering length and the shouldering length of one end point, and the control coefficient slope can be obtained according to the ratio of the difference of the control coefficients to the difference of the shouldering length.
For example, when the shoulder length is 50mm, the slope of the proportionality coefficient between the end point 40mm and the end point 60mm is shown in the following formula (1):
(5-4)/(60-40)＝0.05········(1)；
the difference between the shoulder length of 50mm and the end point of 40mm is shown in the following formula (2):
(50mm-40mm)＝10··········(2)；
on the basis, the scaling factor 5 with the end point of 40mm is adjusted according to the scaling factor slope of 0.05 and the difference value of 10 as shown in the following formula (3):
5+0.05*10＝5.5·········(3)。
the differential coefficient, the integral coefficient corresponding to the shoulder length of 50mm, and the like when the shoulder length is greater than 60mm and less than 80 mm.
And 305, adopting the control coefficient to realize cooling control in the shouldering process according to the lifted shouldering cooling slope.
In the embodiment of the present invention, when cooling is performed according to the raised shoulder-placing cooling slope in the shoulder-placing process, cooling control may be implemented according to a control coefficient corresponding to the shoulder-placing type segment, where PID control may be implemented according to the control coefficient to adapt to the difference of crystal growth rates in different shoulder-placing type segments in accurate and stable cooling control, and further, step 206 may correspond to the related description referred to in the foregoing step 103, so that repetition is avoided and no further description is provided herein.
In the implementation of the invention, the cooling amount of the shoulder transferring process and the equal diameter process in the preparation of the Czochralski monocrystalline silicon is adjusted to the shoulder placing process, the target cooling amount is obtained, the shoulder placing cooling slope in the shoulder placing process is improved according to the target cooling amount, so that the cooling control of the target cooling amount is completed in the shoulder placing process according to the adjusted shoulder placing cooling slope, at the moment, the cooling amount in the shoulder placing process is improved, the cooling targets in the shoulder transferring process and the equal diameter process are realized in advance, the melt temperatures in the shoulder placing process, the shoulder transferring process and the equal diameter process can be effectively reduced, the crucible dissolution can be reduced, the dissolution amount of oxygen impurities in the melt can be reduced, and the oxygen content of the finished monocrystalline silicon can be reduced.
Further, in the process of preparing silicon single crystal by the Czochralski method, silicon monoxide is generated by the action of the melt and the crucible and enters the melt, part of the silicon monoxide reaches the surface of the melt through the convection of the melt and escapes in the form of oxygen volatilization, part of the silicon single crystal is dissolved in the melt and finally exists in the silicon single crystal in the form of oxygen atoms, and it can be seen that the surface of the melt can form oxygen enrichment to a certain extent, and the longer the process steps such as shoulder placing process, shoulder turning process and the like are, the higher the oxygen enrichment degree of the surface of the melt is, so that the oxygen content in the finished product of the silicon single crystal can be higher.
Referring to fig. 4, fig. 4 shows a fourth step flowchart of a shoulder release control method according to an embodiment of the present invention, where the method may include:
step 401, adjusting the cooling amount in the shoulder rotating process and the constant diameter process to the shoulder placing process, and obtaining the target cooling amount.
Step 402, lifting the shoulder-placing cooling slope in the shoulder-placing process according to the target cooling amount.
In the embodiment of the present invention, the steps 402-401 may be referred to in the foregoing description of steps 101-102 or steps 201-204, and are not repeated here.
Step 403, raising the pulling speed of the monocrystal in the shouldering process according to the target cooling amount.
In the embodiment of the invention, the target cooling amount is larger than the initial shouldering cooling amount in the shouldering process, so that the crystallization amount of the monocrystalline silicon is improved under the condition of larger cooling amount, and further, the pulling speed of the monocrystalline in the shouldering process can be improved to adapt to the improvement of the crystallization amount. It can be seen that the increase of the pulling rate of the single crystal corresponds to the increase of the target cooling amount, and those skilled in the art can increase the pulling rate of the single crystal according to the process conditions and production requirements, including an upper limit and a lower limit for increasing the pulling rate of the single crystal, which is not particularly limited in the embodiment of the present invention.
And step 404, performing cooling control in the shouldering process according to the lifted shouldering cooling slope at the lifted single crystal pulling speed.
In the embodiment of the present invention, the cooling control may be performed during the shoulder-placing process according to the raised shoulder-placing cooling slope at the raised single crystal pulling rate, and the description of the foregoing step 103 or steps 303 to 305 may be referred to correspondingly specifically, so that repetition is avoided and no further description is given here.
In the implementation of the invention, the cooling amount in the shoulder-turning process and the equal diameter process in the preparation of the Czochralski monocrystalline silicon is adjusted to the shoulder-placing process to obtain the target cooling amount, the shoulder-placing cooling slope in the shoulder-placing process is improved according to the target cooling amount, so that the cooling control of the target cooling amount in the shoulder-placing process is completed according to the adjusted shoulder-placing cooling slope, at the moment, the cooling amount in the shoulder-placing process is improved, the cooling targets in the shoulder-turning process and the equal diameter process are realized in advance, and the melt temperatures in the shoulder-placing process, the shoulder-turning process and the equal diameter process can be effectively reduced, thereby reducing crucible dissolution, reducing the dissolution amount of oxygen impurities in the melt and reducing the oxygen content of the finished monocrystalline silicon; meanwhile, the pulling speed of the single crystal in the shouldering process is improved according to the target cooling amount, so that the duration in the shouldering process is shortened, the oxygen enrichment degree of a crystallization interface is reduced, and the oxygen content of the finished single crystal silicon is further reduced.
Referring to FIG. 5, FIG. 5 shows an embodiment of the present inventionA specific example flowchart of a shouldering control method is provided, in which the power P of the seeding process 0 =60 KW, the method may comprise:
step 501, obtaining an initial shoulder turning cooling amount of 2.5KW in a shoulder turning process, and setting an actual cooling amount of 0KW in the shoulder turning process;
step 502, obtaining an initial equal-diameter cooling amount of 3KW in an equal-diameter process, and setting an actual cooling amount of 0KW in the equal-diameter process;
step 503, obtaining an initial shouldering cooling amount of 9KW in the shouldering process, and accumulating the initial shouldering cooling amount, the initial shoulder rotating cooling amount and the initial constant diameter cooling amount to obtain a target cooling amount of 14.5KW;
step 504, lifting the upper limit of the single crystal pulling speed from 70mm/h to 100mm/h according to the target cooling amount, lifting the lower limit of the single crystal pulling speed from 25mm/h to 30mm/h, and lifting the basic pulling speed of the single crystal pulling speed from 42mm/h to 75mm/h;
step 505, acquiring a cooling pre-parameter of 0-5.5KW according to the target cooling amount;
step 506, lifting the shouldering cooling slope according to the cooling preposition parameters 0-5.5KW and the target cooling amount 14.5KW, and lifting the shouldering cooling slope from 0.3/1.2/1.4/1.7/1.9/2.5/3.2/4.5/9KW to 1/1.9/2.1/2.4/2.6/3.2/3.9/6.7/14.5 KW;
In the embodiment of the present invention, as can be seen from the elevation of the shoulder slope in step 506, the elevation of the shoulder slope is 0.7KW for each of the first stage to the seventh stage in the cooling process, 2.2KW for the eighth stage, and 5.5KW for the ninth stage, and the total actual cooling amount is up to the target cooling amount of 14.5KW.
Step 507, adjusting the shouldering length according to the lifted shouldering cooling slope, and adjusting the shouldering length from 0/10/20/30/40/50/60/70/80/90/100/110 to 0/10/20/30/40/50/60/70/80/90/100/110/120;
step 508, adjusting the shouldering diameter according to the lifted shouldering cooling slope, and adjusting the shouldering diameter from '7/10/16/24/38/60/84/124/165/210/255/300' to '7.3/16/25/38/54/75/100/130/163/200/240/280/320';
referring to fig. 6, fig. 6 shows a schematic diagram of a shoulder-displacement adjusting front-back curve provided by the embodiment of the invention, wherein the shoulder-displacement is adjusted according to the adjustment of the slope of the temperature reduction of the shoulder, and compared with the shoulder-displacement length and the shoulder-displacement diameter before adjustment, the shoulder-displacement adjusting front-back curve is improved.
Step 509, setting corresponding control coefficients in a segmented manner according to the adjusted shouldering length.
In the embodiment of the invention, examples of setting the corresponding control coefficients for the shoulder length segments are as follows:
In the case that the shoulder length is less than or equal to 40mm, the control coefficient is P ≤40mm ＝5、I ≤40mm ＝0、D ≤40mm ＝1000；
In the case that the shoulder length is greater than or equal to 80mm, the control coefficient is P ≥80mm ＝3、I ≥80mm ＝0.05、D ≥80mm ＝800；
Under the condition that the shoulder length is equal to 60mm, the control coefficient is P 60mm ＝4、I 60mm ＝0.02、D 60mm ＝1000；
Under the condition that the shouldering length is more than 40mm and less than 60mm, the control coefficient corresponding to 40mm can be adjusted according to the difference value between the shouldering length and 40mm and the control coefficient slope of the two ends so as to determine the control coefficient corresponding to the shouldering length;
for example, taking a shoulder length of 50mm as an example, since 40mm < 50mm < 60mm, the scaling factor P corresponding to the shoulder length of 50mm can be calculated according to a preset calculation rule 50mm ＝(P ≤40mm -P 60mm )/(60mm-40mm)*(50mm-40mm)+P ≤40mm = (5-4)/(60-40) × (50-40) +5=5.5, and so on, I 50mm ＝0.01、D 50mm ＝1000。
Under the condition that the shouldering length is more than 60mm and less than 80mm, the control coefficient corresponding to 60mm can be adjusted according to the difference value between the shouldering length and 60mm and the control slope coefficient between the two end points so as to determine the control coefficient corresponding to the shouldering length.
Alternatively, the control coefficient may be set in segments according to the shoulder diameter, which is not particularly limited in the embodiment of the present invention.
And 510, realizing cooling control in the shouldering process by adopting a control coefficient according to the lifted shouldering cooling slope at the increased single crystal pulling speed.
In the process, the crucible lifting coefficient of the crucible is unchanged at 0.4.
In the implementation of the invention, the cooling amount in the shoulder-turning process and the equal diameter process in the preparation of the Czochralski monocrystalline silicon is adjusted to the shoulder-placing process to obtain the target cooling amount, the shoulder-placing cooling slope in the shoulder-placing process is improved according to the target cooling amount, so that the cooling control of the target cooling amount in the shoulder-placing process is completed according to the adjusted shoulder-placing cooling slope, at the moment, the cooling amount in the shoulder-placing process is improved, the cooling targets in the shoulder-turning process and the equal diameter process are realized in advance, and the melt temperatures in the shoulder-placing process, the shoulder-turning process and the equal diameter process can be effectively reduced, thereby reducing crucible dissolution, reducing the dissolution amount of oxygen impurities in the melt and reducing the oxygen content of the finished monocrystalline silicon; meanwhile, the pulling speed of the single crystal in the shouldering process is improved according to the target cooling amount, so that the duration in the shouldering process is shortened, the oxygen enrichment degree of a crystallization interface is reduced, and the oxygen content of the finished single crystal silicon is further reduced.
Referring to fig. 7, fig. 7 shows a block diagram of a shoulder rest control device 60 according to an embodiment of the present invention, where the device may include:
the cooling amount pre-module 601 is configured to adjust cooling amounts in a shoulder turning process and an equal diameter process to a shoulder placing process, so as to obtain a target cooling amount;
The cooling slope adjustment module 602 is configured to increase a shoulder cooling slope in the shoulder placing process according to the target cooling amount;
the shouldering cooling control module 603 is configured to perform cooling control in the shouldering process according to the lifted shouldering cooling slope.
Optionally, the cooling slope adjustment module 602 includes:
the adjustment parameter acquisition sub-module is used for acquiring a cooling preposition parameter according to the target cooling amount, wherein the cooling preposition parameter represents the adjustment range of the shouldering cooling slope;
and the early-stage slope adjustment sub-module is used for improving the shoulder-placing cooling slope according to the cooling preposed parameter and the target cooling amount.
Optionally, the apparatus further comprises:
the pulling speed adjusting module is used for improving the pulling speed of the single crystal in the shouldering process according to the target cooling quantity;
the shouldering cooling control module is specifically used for carrying out cooling control in the shouldering process according to the lifted shouldering cooling slope at the increased single crystal pulling speed.
Optionally, the apparatus further comprises:
the shoulder adjusting module is used for adjusting the shoulder shape in the shoulder placing process according to the lifted shoulder placing cooling slope, and the shoulder placing shape comprises at least one of a shoulder placing length and a shoulder placing diameter;
The control coefficient module is used for setting corresponding control coefficients for the adjusted shoulder-type subsection, and the control coefficients comprise at least one of a proportional coefficient, an integral coefficient and a differential coefficient;
the shoulder placing cooling control module is specifically used for realizing cooling control in the shoulder placing process by adopting the control coefficient according to the lifted shoulder placing cooling slope.
Optionally, the control coefficient module includes:
the first segmentation submodule is used for enabling the proportion coefficient to be 5, the integral coefficient to be 0 and the differential coefficient to be 1000 when the shouldering length is smaller than or equal to 40 mm;
a second segmentation submodule, configured to, in a case where the shoulder length is equal to 60mm, obtain a scaling factor of 4, an integration factor of 0.02, and a differentiation factor of 1000;
a third segmentation submodule, configured to, in a case where the shoulder length is greater than or equal to 80mm, obtain a scaling factor of 3, obtain an integration factor of 0.05, and obtain a differentiation factor of 800;
a fourth segmentation submodule, configured to determine, according to a preset calculation rule, a control coefficient corresponding to the shouldering length based on a control coefficient corresponding to the shouldering length of 40mm and a control coefficient corresponding to the shouldering length of 60mm when the shouldering length is greater than 40mm and less than 60 mm;
And the fifth segmentation submodule is used for determining the control coefficient corresponding to the shouldering length based on the control coefficient corresponding to the shouldering length of 60mm and the control coefficient corresponding to the shouldering length of 80mm according to a preset calculation rule under the condition that the shouldering length is more than 60mm and less than 80 mm.
Optionally, the cooling amount pre-module 601 includes:
an initial cooling amount obtaining sub-module, configured to obtain an initial shoulder cooling amount in the shoulder process, an initial shoulder cooling amount in the shoulder rotating process, and an initial constant diameter cooling amount in the constant diameter process, and set an actual cooling amount in the shoulder rotating process and the constant diameter process to zero;
and the equal-diameter shoulder-turning cooling quantity pre-arranged sub-module is used for accumulating the initial shoulder-turning cooling quantity, the initial shoulder-turning cooling quantity and the initial equal-diameter cooling quantity to obtain the target cooling quantity.
Optionally, the cooling prepositive parameter is 0-5.5KW.
In the implementation of the invention, the cooling amount of the shoulder transferring process and the equal diameter process in the preparation of the Czochralski monocrystalline silicon is adjusted to the shoulder placing process, the target cooling amount is obtained, the shoulder placing cooling slope in the shoulder placing process is improved according to the target cooling amount, so that the cooling control of the target cooling amount is completed in the shoulder placing process according to the adjusted shoulder placing cooling slope, at the moment, the cooling amount in the shoulder placing process is improved, the cooling targets in the shoulder transferring process and the equal diameter process are realized in advance, the melt temperatures in the shoulder placing process, the shoulder transferring process and the equal diameter process can be effectively reduced, the crucible dissolution can be reduced, the dissolution amount of oxygen impurities in the melt can be reduced, and the oxygen content of the finished monocrystalline silicon can be reduced.
The embodiment of the invention provides electronic equipment, which comprises a processor, a communication interface, a memory and a communication bus, wherein the processor, the communication interface and the memory are communicated with each other through the communication bus;
the memory is used for storing a computer program;
the processor is configured to implement the aforementioned shouldering control method when executing the computer program stored in the memory.
The embodiment of the invention also provides a computer readable storage medium, wherein the computer readable storage medium stores instructions which, when run on a computer, cause the computer to execute any one of the above-mentioned shouldering control methods.
The embodiment of the invention also provides a computer program product containing instructions, which when run on a computer, cause the computer to execute the shouldering control method.
It should be noted that, for simplicity of description, the method embodiments are shown as a series of acts, but it should be understood by those skilled in the art that the embodiments are not limited by the order of acts, as some steps may occur in other orders or concurrently in accordance with the embodiments. Further, those skilled in the art will appreciate that the embodiments described in the specification are presently preferred, and that the acts are not necessarily all required in accordance with the embodiments of the invention.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
From the above description of the embodiments, it will be clear to those skilled in the art that the above-described embodiment method may be implemented by means of software plus a necessary general hardware platform, but of course may also be implemented by means of hardware, but in many cases the former is a preferred embodiment. Based on such understanding, the technical solution of the present invention may be embodied essentially or in a part contributing to the prior art in the form of a software product stored in a storage medium (e.g. ROM/RAM, magnetic disk, optical disk) comprising instructions for causing a terminal (which may be a mobile phone, a computer, a server, an air conditioner, or a network device, etc.) to perform the method according to the embodiments of the present invention.
The embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to the above-described embodiments, which are merely illustrative and not restrictive, and many forms may be made by those having ordinary skill in the art without departing from the spirit of the present invention and the scope of the claims, which are to be protected by the present invention.
Claims (10)
1. A shouldering control method, characterized in that the method comprises:
adjusting the cooling amount in the shoulder rotating process and the constant diameter process to the shoulder placing process, and obtaining a target cooling amount;
lifting the shoulder placing cooling slope in the shoulder placing process according to the target cooling amount;
and performing cooling control in the shouldering process according to the lifted shouldering cooling slope.
2. The method of claim 1, wherein the step of increasing the shoulder-down slope during the shoulder-down process according to the target cooling amount comprises:
acquiring a cooling preposition parameter according to the target cooling amount, wherein the cooling preposition parameter represents an adjustment range of the shoulder-placing cooling slope;
and lifting the shoulder-placing cooling slope according to the cooling preposed parameter and the target cooling quantity.
3. The method of claim 1, further comprising, after said raising the shoulder-placing cooling slope during said shoulder-placing according to said target cooling amount:
the pulling speed of the single crystal in the shouldering process is improved according to the target cooling quantity;
the cooling control is carried out in the shoulder placing process according to the lifted shoulder placing cooling slope, and the method comprises the following steps:
and at the increased pulling speed of the single crystal, performing cooling control in the shouldering process according to the lifted shouldering cooling slope.
4. The method of claim 1, further comprising, after said raising the shoulder-placing cooling slope during said shoulder-placing according to said target cooling amount:
adjusting the shouldering shoulder shape in the shouldering process according to the lifted shouldering cooling slope, wherein the shouldering shoulder shape comprises at least one of shouldering length and shouldering diameter;
setting corresponding control coefficients for the adjusted shoulder-placing type segments, wherein the control coefficients comprise at least one of a proportional coefficient, an integral coefficient and a differential coefficient;
the cooling control is carried out in the shoulder placing process according to the lifted shoulder placing cooling slope, and the method comprises the following steps:
And adopting the control coefficient to realize cooling control in the shouldering process according to the lifted shouldering cooling slope.
5. The method according to claim 4, wherein the shouldering is shouldering length, the control coefficients are proportional coefficients, integral coefficients, differential coefficients, and the setting of the adjusted shouldering segments with the corresponding control coefficients comprises:
in the case that the shoulder length is less than or equal to 40mm, the proportional coefficient is 5, the integral coefficient is 0, and the differential coefficient is 1000;
in the case that the shoulder length is equal to 60mm, the proportional coefficient is 4, the integral coefficient is 0.02, and the differential coefficient is 1000;
in the case that the shoulder length is greater than or equal to 80mm, the proportionality coefficient is 3, the integral coefficient is 0.05, and the differential coefficient is 800;
under the condition that the shouldering length is larger than 40mm and smaller than 60mm, determining a control coefficient corresponding to the shouldering length based on a control coefficient corresponding to the shouldering length of 40mm and a control coefficient corresponding to the shouldering length of 60mm according to a preset calculation rule;
and under the condition that the shouldering length is more than 60mm and less than 80mm, determining the control coefficient corresponding to the shouldering length based on the control coefficient corresponding to the shouldering length of 60mm and the control coefficient corresponding to the shouldering length of 80mm according to a preset calculation rule.
6. The method of claim 1, wherein adjusting the cooling amount of the shoulder turning process and the constant diameter process to the shoulder placing process to obtain the target cooling amount comprises:
acquiring initial shoulder-placing cooling amount in the shoulder-placing process, and setting the initial shoulder-rotating cooling amount in the shoulder-rotating process and the initial constant-diameter cooling amount in the constant-diameter process to be zero;
and accumulating the initial shouldering cooling quantity, the initial shoulder rotating cooling quantity and the initial constant diameter cooling quantity to obtain the target cooling quantity.
7. The method of claim 2, wherein the pre-cooling parameter is 0-5.5KW.
8. A shoulder rest control device, the device comprising:
the cooling quantity prepositive module is used for adjusting the cooling quantity in the shoulder rotating process and the constant diameter process to the shoulder placing process to obtain a target cooling quantity;
the cooling slope adjustment module is used for improving the shoulder-placing cooling slope in the shoulder-placing process according to the target cooling quantity;
and the shoulder placing cooling control module is used for carrying out cooling control in the shoulder placing process according to the lifted shoulder placing cooling slope.
9. An electronic device, comprising a processor, a communication interface, a memory and a communication bus, wherein the processor, the communication interface, the memory complete communication with each other through the communication bus;
the memory is used for storing a computer program;
the processor is configured to implement the shouldering control method according to any one of claims 1 to 7 when executing the computer program stored on the memory.
10. A computer-readable storage medium storing a computer program, wherein the computer program, when executed by the processor, implements the shouldering control method according to any one of claims 1 to 7.
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