CN116545406A - 用于大功率应用的横向激励薄膜体声波谐振器 - Google Patents
用于大功率应用的横向激励薄膜体声波谐振器 Download PDFInfo
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- CN116545406A CN116545406A CN202310512524.8A CN202310512524A CN116545406A CN 116545406 A CN116545406 A CN 116545406A CN 202310512524 A CN202310512524 A CN 202310512524A CN 116545406 A CN116545406 A CN 116545406A
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- 239000010409 thin film Substances 0.000 title description 7
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 239000012528 membrane Substances 0.000 claims abstract description 23
- 239000004020 conductor Substances 0.000 claims description 40
- 229910052782 aluminium Inorganic materials 0.000 claims description 34
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 34
- 239000011295 pitch Substances 0.000 claims description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 19
- 229910052802 copper Inorganic materials 0.000 claims description 19
- 239000010949 copper Substances 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000013078 crystal Substances 0.000 abstract description 13
- 239000010410 layer Substances 0.000 description 63
- 238000004891 communication Methods 0.000 description 20
- 229910052751 metal Inorganic materials 0.000 description 19
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- 239000000463 material Substances 0.000 description 16
- 238000010586 diagram Methods 0.000 description 15
- 230000000694 effects Effects 0.000 description 15
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 15
- 238000000034 method Methods 0.000 description 11
- 238000010897 surface acoustic wave method Methods 0.000 description 11
- 230000008878 coupling Effects 0.000 description 10
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- 239000010408 film Substances 0.000 description 6
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 238000003780 insertion Methods 0.000 description 4
- 230000037431 insertion Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
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- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
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- 229910000838 Al alloy Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
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- 238000002955 isolation Methods 0.000 description 1
- -1 langasite Chemical compound 0.000 description 1
- 238000012886 linear function Methods 0.000 description 1
- 238000005088 metallography Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
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- 239000002470 thermal conductor Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02228—Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02125—Means for compensation or elimination of undesirable effects of parasitic elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02157—Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/131—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/178—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator of a laminated structure of multiple piezoelectric layers with inner electrodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/564—Monolithic crystal filters implemented with thin-film techniques
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/566—Electric coupling means therefor
- H03H9/568—Electric coupling means therefor consisting of a ladder configuration
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310512524.8A CN116545406A (zh) | 2019-09-23 | 2020-10-08 | 用于大功率应用的横向激励薄膜体声波谐振器 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/578,811 US10637438B2 (en) | 2018-06-15 | 2019-09-23 | Transversely-excited film bulk acoustic resonators for high power applications |
| CN202080066592.0A CN115004548B (zh) | 2019-09-23 | 2020-10-08 | 用于大功率应用的横向激励薄膜体声波谐振器 |
| PCT/US2020/054811 WO2021062421A1 (en) | 2019-09-23 | 2020-10-08 | Transversely-excited film bulk acoustic resonators for high power applications |
| CN202310512524.8A CN116545406A (zh) | 2019-09-23 | 2020-10-08 | 用于大功率应用的横向激励薄膜体声波谐振器 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202080066592.0A Division CN115004548B (zh) | 2019-09-23 | 2020-10-08 | 用于大功率应用的横向激励薄膜体声波谐振器 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116545406A true CN116545406A (zh) | 2023-08-04 |
Family
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Family Applications (5)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310513637.XA Pending CN116545408A (zh) | 2019-09-23 | 2020-10-08 | 用于大功率应用的横向激励薄膜体声波谐振器 |
| CN202310511615.XA Pending CN116545405A (zh) | 2019-09-23 | 2020-10-08 | 用于大功率应用的横向激励薄膜体声波谐振器 |
| CN202310513628.0A Pending CN116545407A (zh) | 2019-09-23 | 2020-10-08 | 用于大功率应用的横向激励薄膜体声波谐振器 |
| CN202310512524.8A Pending CN116545406A (zh) | 2019-09-23 | 2020-10-08 | 用于大功率应用的横向激励薄膜体声波谐振器 |
| CN202080066592.0A Active CN115004548B (zh) | 2019-09-23 | 2020-10-08 | 用于大功率应用的横向激励薄膜体声波谐振器 |
Family Applications Before (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310513637.XA Pending CN116545408A (zh) | 2019-09-23 | 2020-10-08 | 用于大功率应用的横向激励薄膜体声波谐振器 |
| CN202310511615.XA Pending CN116545405A (zh) | 2019-09-23 | 2020-10-08 | 用于大功率应用的横向激励薄膜体声波谐振器 |
| CN202310513628.0A Pending CN116545407A (zh) | 2019-09-23 | 2020-10-08 | 用于大功率应用的横向激励薄膜体声波谐振器 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202080066592.0A Active CN115004548B (zh) | 2019-09-23 | 2020-10-08 | 用于大功率应用的横向激励薄膜体声波谐振器 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2022540515A (de) |
| CN (5) | CN116545408A (de) |
| DE (1) | DE112020004488B8 (de) |
| WO (1) | WO2021062421A1 (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024043344A1 (ja) * | 2022-08-26 | 2024-02-29 | 株式会社村田製作所 | 弾性波装置 |
| WO2024055388A1 (en) * | 2022-09-14 | 2024-03-21 | Huawei Technologies Co., Ltd. | Acoustic resonator |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5601377B2 (ja) * | 2010-11-30 | 2014-10-08 | 株式会社村田製作所 | 弾性波装置及びその製造方法 |
| CN106664072A (zh) * | 2014-07-31 | 2017-05-10 | 天工滤波方案日本有限公司 | 声波滤波器和使用其的双工器 |
| CN109075763B (zh) * | 2016-04-27 | 2022-06-10 | 京瓷株式会社 | 弹性波元件以及通信装置 |
| JP2017224890A (ja) | 2016-06-13 | 2017-12-21 | 株式会社村田製作所 | 弾性波装置 |
| US10491192B1 (en) | 2018-06-15 | 2019-11-26 | Resonant Inc. | Transversely-excited film bulk acoustic resonator |
| US11264966B2 (en) * | 2018-06-15 | 2022-03-01 | Resonant Inc. | Solidly-mounted transversely-excited film bulk acoustic resonator with diamond layers in Bragg reflector stack |
| WO2020100744A1 (ja) * | 2018-11-16 | 2020-05-22 | 株式会社村田製作所 | 弾性波装置 |
| US11901873B2 (en) * | 2019-03-14 | 2024-02-13 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator with partial BRAGG reflectors |
| CN113765495A (zh) * | 2020-05-19 | 2021-12-07 | 谐振公司 | 用于大功率应用的使用yx切割的铌酸锂的横向激励的薄膜体声波谐振器 |
-
2020
- 2020-10-08 CN CN202310513637.XA patent/CN116545408A/zh active Pending
- 2020-10-08 CN CN202310511615.XA patent/CN116545405A/zh active Pending
- 2020-10-08 JP JP2022518002A patent/JP2022540515A/ja active Pending
- 2020-10-08 WO PCT/US2020/054811 patent/WO2021062421A1/en active Application Filing
- 2020-10-08 DE DE112020004488.2T patent/DE112020004488B8/de active Active
- 2020-10-08 CN CN202310513628.0A patent/CN116545407A/zh active Pending
- 2020-10-08 CN CN202310512524.8A patent/CN116545406A/zh active Pending
- 2020-10-08 CN CN202080066592.0A patent/CN115004548B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2021062421A1 (en) | 2021-04-01 |
| CN115004548A (zh) | 2022-09-02 |
| CN115004548B (zh) | 2023-05-26 |
| CN116545407A (zh) | 2023-08-04 |
| JP2022540515A (ja) | 2022-09-15 |
| DE112020004488T5 (de) | 2022-10-13 |
| DE112020004488B4 (de) | 2023-05-25 |
| CN116545405A (zh) | 2023-08-04 |
| CN116545408A (zh) | 2023-08-04 |
| DE112020004488B8 (de) | 2023-08-03 |
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